WO1990007196A3 - Diode electroluminescente emettant dans le bleu constituee en carbure de silicium - Google Patents
Diode electroluminescente emettant dans le bleu constituee en carbure de silicium Download PDFInfo
- Publication number
- WO1990007196A3 WO1990007196A3 PCT/US1989/005555 US8905555W WO9007196A3 WO 1990007196 A3 WO1990007196 A3 WO 1990007196A3 US 8905555 W US8905555 W US 8905555W WO 9007196 A3 WO9007196 A3 WO 9007196A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon carbide
- epitaxial layer
- nanometers
- light emitting
- substrate
- Prior art date
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 2
- 229910021431 alpha silicon carbide Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900701778A KR910700548A (ko) | 1988-12-14 | 1989-12-13 | 탄화규소로 형성된 푸른빛 발광다이오우드 |
DE68921766T DE68921766D1 (de) | 1988-12-14 | 1989-12-13 | Im blauen licht von siliziumkarbid ausstrahlende diode. |
EP90900695A EP0448607B1 (fr) | 1988-12-14 | 1989-12-13 | Diode electroluminescente emettant dans le bleu constituee en carbure de silicium |
JP2501400A JPH0821730B2 (ja) | 1988-12-14 | 1989-12-13 | 炭化シリコン内に形成した青色発光ダイオード |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/284,293 US4918497A (en) | 1988-12-14 | 1988-12-14 | Blue light emitting diode formed in silicon carbide |
US284,293 | 1988-12-14 | ||
US07/399,301 US5027168A (en) | 1988-12-14 | 1989-08-28 | Blue light emitting diode formed in silicon carbide |
US399,301 | 1989-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1990007196A2 WO1990007196A2 (fr) | 1990-06-28 |
WO1990007196A3 true WO1990007196A3 (fr) | 1990-09-07 |
Family
ID=26962535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1989/005555 WO1990007196A2 (fr) | 1988-12-14 | 1989-12-13 | Diode electroluminescente emettant dans le bleu constituee en carbure de silicium |
Country Status (12)
Country | Link |
---|---|
US (1) | US5027168A (fr) |
EP (1) | EP0448607B1 (fr) |
JP (1) | JPH0821730B2 (fr) |
KR (1) | KR910700548A (fr) |
CN (1) | CN1019436B (fr) |
AT (1) | ATE120035T1 (fr) |
AU (1) | AU4759290A (fr) |
CA (1) | CA2005377C (fr) |
DE (1) | DE68921766D1 (fr) |
MX (1) | MX174445B (fr) |
MY (1) | MY105078A (fr) |
WO (1) | WO1990007196A2 (fr) |
Families Citing this family (247)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
US7235819B2 (en) * | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
EP0576566B1 (fr) * | 1991-03-18 | 1999-05-26 | Trustees Of Boston University | Procede de preparation et de dopage de couches minces de nitrure de gallium monocristallin tres isolant |
JPH05129656A (ja) * | 1991-10-31 | 1993-05-25 | Sharp Corp | pn接合型発光ダイオード |
US5313078A (en) * | 1991-12-04 | 1994-05-17 | Sharp Kabushiki Kaisha | Multi-layer silicon carbide light emitting diode having a PN junction |
US5331180A (en) * | 1992-04-30 | 1994-07-19 | Fujitsu Limited | Porous semiconductor light emitting device |
US5394005A (en) * | 1992-05-05 | 1995-02-28 | General Electric Company | Silicon carbide photodiode with improved short wavelength response and very low leakage current |
WO1993023882A1 (fr) * | 1992-05-19 | 1993-11-25 | California Institute Of Technology | Emetteurs electroluminescents a semi-conducteurs a large bande interdite |
US5724062A (en) * | 1992-08-05 | 1998-03-03 | Cree Research, Inc. | High resolution, high brightness light emitting diode display and method and producing the same |
US5359345A (en) * | 1992-08-05 | 1994-10-25 | Cree Research, Inc. | Shuttered and cycled light emitting diode display and method of producing the same |
US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
US6590502B1 (en) | 1992-10-12 | 2003-07-08 | 911Ep, Inc. | Led warning signal light and movable support |
DE4318899C2 (de) * | 1993-06-07 | 1997-02-20 | Agfa Gevaert Ag | Verfahren und Vorrichtung zum Aufbelichten von Daten auf Röntgenfilme |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
DE69431333T2 (de) * | 1993-10-08 | 2003-07-31 | Mitsubishi Cable Ind Ltd | GaN-Einkristall |
US5406237A (en) * | 1994-01-24 | 1995-04-11 | Westinghouse Electric Corporation | Wideband frequency multiplier having a silicon carbide varactor for use in high power microwave applications |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5679153A (en) * | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
JP3599896B2 (ja) * | 1995-05-19 | 2004-12-08 | 三洋電機株式会社 | 半導体レーザ素子および半導体レーザ素子の製造方法 |
US5812105A (en) * | 1996-06-10 | 1998-09-22 | Cree Research, Inc. | Led dot matrix drive method and apparatus |
US7385574B1 (en) | 1995-12-29 | 2008-06-10 | Cree, Inc. | True color flat panel display module |
US6403708B2 (en) | 1996-05-27 | 2002-06-11 | Mitsui Chemicals Inc | Crystalline polypropylenes, process for preparing thereof, polypropylene compositions, and thermoformed products |
DE69835216T2 (de) | 1997-07-25 | 2007-05-31 | Nichia Corp., Anan | Halbleitervorrichtung aus einer nitridverbindung |
GB2330679B (en) | 1997-10-21 | 2002-04-24 | 911 Emergency Products Inc | Warning signal light |
US6252254B1 (en) | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
DE19925233A1 (de) * | 1998-06-08 | 1999-12-09 | Siemens Ag | Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung |
US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
DE60043536D1 (de) | 1999-03-04 | 2010-01-28 | Nichia Corp | Nitridhalbleiterlaserelement |
US6614359B2 (en) * | 1999-04-06 | 2003-09-02 | 911 Emergency Products, Inc. | Replacement led lamp assembly and modulated power intensity for light source |
US6380865B1 (en) | 1999-04-06 | 2002-04-30 | 911 Emergency Products, Inc. | Replacement led lamp assembly and modulated power intensity for light source |
US6462669B1 (en) | 1999-04-06 | 2002-10-08 | E. P . Survivors Llc | Replaceable LED modules |
WO2000074975A1 (fr) | 1999-06-08 | 2000-12-14 | 911 Emergency Products, Inc. | Ensemble portant a diodes electroluminescentes pour automobile |
US6705745B1 (en) * | 1999-06-08 | 2004-03-16 | 911Ep, Inc. | Rotational led reflector |
US6700502B1 (en) | 1999-06-08 | 2004-03-02 | 911Ep, Inc. | Strip LED light assembly for motor vehicle |
US6367949B1 (en) | 1999-08-04 | 2002-04-09 | 911 Emergency Products, Inc. | Par 36 LED utility lamp |
US6547410B1 (en) | 2000-07-28 | 2003-04-15 | 911 Emergency Products, Inc. | LED alley/take-down light |
US6646292B2 (en) * | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
WO2001095673A1 (fr) | 2000-06-06 | 2001-12-13 | 911 Emergency Products, Inc. | Circuit de compensation pour del |
DE10040448A1 (de) * | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zu dessen Herstellung |
WO2002041276A2 (fr) * | 2000-11-15 | 2002-05-23 | Snowy Village, Inc. | Avertisseur lumineux a base de diodes electroluminescentes et systeme de communication |
US8188878B2 (en) | 2000-11-15 | 2012-05-29 | Federal Law Enforcement Development Services, Inc. | LED light communication system |
US7439847B2 (en) | 2002-08-23 | 2008-10-21 | John C. Pederson | Intelligent observation and identification database system |
US6800876B2 (en) | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
US6906352B2 (en) | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
US6794684B2 (en) | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
CN1505843B (zh) | 2001-06-15 | 2010-05-05 | 克里公司 | 在SiC衬底上形成的GaN基LED |
US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US7211833B2 (en) * | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US7858403B2 (en) | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
US20030090103A1 (en) * | 2001-11-09 | 2003-05-15 | Thomas Becker | Direct mailing device |
US7138291B2 (en) | 2003-01-30 | 2006-11-21 | Cree, Inc. | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
US6875995B2 (en) * | 2002-08-16 | 2005-04-05 | Cree, Inc. | Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor |
US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
AU2003276867A1 (en) * | 2002-09-19 | 2004-04-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
JP4080843B2 (ja) * | 2002-10-30 | 2008-04-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6987281B2 (en) * | 2003-02-13 | 2006-01-17 | Cree, Inc. | Group III nitride contact structures for light emitting devices |
US6952024B2 (en) * | 2003-02-13 | 2005-10-04 | Cree, Inc. | Group III nitride LED with silicon carbide cladding layer |
US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
US7087936B2 (en) * | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
US7531380B2 (en) | 2003-04-30 | 2009-05-12 | Cree, Inc. | Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof |
US7714345B2 (en) * | 2003-04-30 | 2010-05-11 | Cree, Inc. | Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same |
US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP2007511105A (ja) * | 2003-11-12 | 2007-04-26 | クリー インコーポレイテッド | 発光デバイス(led)をその上に有する半導体ウエハ裏面を加工する方法およびその方法により形成されたled |
US7518158B2 (en) * | 2003-12-09 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices and submounts |
US7615689B2 (en) * | 2004-02-12 | 2009-11-10 | Seminis Vegatable Seeds, Inc. | Methods for coupling resistance alleles in tomato |
US20050215041A1 (en) * | 2004-03-23 | 2005-09-29 | Seng William F | Low temperature, long term annealing of nickel contacts to lower interfacial resistance |
US7202181B2 (en) * | 2004-03-26 | 2007-04-10 | Cres, Inc. | Etching of substrates of light emitting devices |
US7355284B2 (en) | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
US7279346B2 (en) * | 2004-03-31 | 2007-10-09 | Cree, Inc. | Method for packaging a light emitting device by one dispense then cure step followed by another |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
US7326583B2 (en) | 2004-03-31 | 2008-02-05 | Cree, Inc. | Methods for packaging of a semiconductor light emitting device |
US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
US7868343B2 (en) * | 2004-04-06 | 2011-01-11 | Cree, Inc. | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
KR101193740B1 (ko) * | 2004-06-30 | 2012-10-22 | 크리 인코포레이티드 | 발광 소자의 패키징을 위한 칩-규모 방법 및 칩 규모로 패키징된 발광 소자 |
US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US20060002442A1 (en) * | 2004-06-30 | 2006-01-05 | Kevin Haberern | Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures |
US7118262B2 (en) * | 2004-07-23 | 2006-10-10 | Cree, Inc. | Reflective optical elements for semiconductor light emitting devices |
TWI374552B (en) | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
US7557380B2 (en) | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
US7217583B2 (en) * | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
US7372198B2 (en) * | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
US8541795B2 (en) * | 2004-10-12 | 2013-09-24 | Cree, Inc. | Side-emitting optical coupling device |
US20060097385A1 (en) | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US7322732B2 (en) | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US7304694B2 (en) * | 2005-01-12 | 2007-12-04 | Cree, Inc. | Solid colloidal dispersions for backlighting of liquid crystal displays |
US7335920B2 (en) * | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
US7939842B2 (en) * | 2005-01-27 | 2011-05-10 | Cree, Inc. | Light emitting device packages, light emitting diode (LED) packages and related methods |
TWI422044B (zh) * | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
US7365371B2 (en) * | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
US7646035B2 (en) * | 2006-05-31 | 2010-01-12 | Cree, Inc. | Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices |
US8835952B2 (en) | 2005-08-04 | 2014-09-16 | Cree, Inc. | Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants |
CN103925521A (zh) | 2005-12-21 | 2014-07-16 | 科锐公司 | 照明装置 |
WO2007073496A2 (fr) | 2005-12-22 | 2007-06-28 | Cree Led Lighting Solutions, Inc. | Dispositif d’eclairage |
US7442564B2 (en) * | 2006-01-19 | 2008-10-28 | Cree, Inc. | Dispensed electrical interconnections |
US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
WO2007084640A2 (fr) * | 2006-01-20 | 2007-07-26 | Cree Led Lighting Solutions, Inc. | Deplacer un contenu spectral dans des emetteurs de lumiere a semi-conducteurs en separant des films de luminophores dans l'espace |
US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
US8124957B2 (en) * | 2006-02-22 | 2012-02-28 | Cree, Inc. | Low resistance tunnel junctions in wide band gap materials and method of making same |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US7863639B2 (en) * | 2006-04-12 | 2011-01-04 | Semileds Optoelectronics Co. Ltd. | Light-emitting diode lamp with low thermal resistance |
US8373195B2 (en) | 2006-04-12 | 2013-02-12 | SemiLEDs Optoelectronics Co., Ltd. | Light-emitting diode lamp with low thermal resistance |
US7718991B2 (en) * | 2006-05-23 | 2010-05-18 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
KR20090031370A (ko) | 2006-05-23 | 2009-03-25 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 |
US8008676B2 (en) | 2006-05-26 | 2011-08-30 | Cree, Inc. | Solid state light emitting device and method of making same |
US8698184B2 (en) | 2011-01-21 | 2014-04-15 | Cree, Inc. | Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
US7763478B2 (en) * | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
KR20090048640A (ko) | 2006-08-23 | 2009-05-14 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 및 조명 방법 |
US7808013B2 (en) * | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
US10295147B2 (en) * | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US7709853B2 (en) | 2007-02-12 | 2010-05-04 | Cree, Inc. | Packaged semiconductor light emitting devices having multiple optical elements |
US9061450B2 (en) * | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
US20080198572A1 (en) * | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
US7910944B2 (en) | 2007-05-04 | 2011-03-22 | Cree, Inc. | Side mountable semiconductor light emitting device packages and panels |
US9455783B2 (en) | 2013-05-06 | 2016-09-27 | Federal Law Enforcement Development Services, Inc. | Network security and variable pulse wave form with continuous communication |
US9258864B2 (en) | 2007-05-24 | 2016-02-09 | Federal Law Enforcement Development Services, Inc. | LED light control and management system |
US9100124B2 (en) | 2007-05-24 | 2015-08-04 | Federal Law Enforcement Development Services, Inc. | LED Light Fixture |
US11265082B2 (en) | 2007-05-24 | 2022-03-01 | Federal Law Enforcement Development Services, Inc. | LED light control assembly and system |
US20090003832A1 (en) * | 2007-05-24 | 2009-01-01 | Federal Law Enforcement Development Services, Inc. | Led light broad band over power line communication system |
US9414458B2 (en) | 2007-05-24 | 2016-08-09 | Federal Law Enforcement Development Services, Inc. | LED light control assembly and system |
US9294198B2 (en) | 2007-05-24 | 2016-03-22 | Federal Law Enforcement Development Services, Inc. | Pulsed light communication key |
US8042971B2 (en) | 2007-06-27 | 2011-10-25 | Cree, Inc. | Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods |
US20090002979A1 (en) * | 2007-06-27 | 2009-01-01 | Cree, Inc. | Light emitting device (led) lighting systems for emitting light in multiple directions and related methods |
US10505083B2 (en) * | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
JP5431320B2 (ja) * | 2007-07-17 | 2014-03-05 | クリー インコーポレイテッド | 内部光学機能を備えた光学素子およびその製造方法 |
US7863635B2 (en) * | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
KR101525274B1 (ko) * | 2007-10-26 | 2015-06-02 | 크리, 인코포레이티드 | 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법 |
US8119028B2 (en) * | 2007-11-14 | 2012-02-21 | Cree, Inc. | Cerium and europium doped single crystal phosphors |
US9754926B2 (en) | 2011-01-31 | 2017-09-05 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9660153B2 (en) | 2007-11-14 | 2017-05-23 | Cree, Inc. | Gap engineering for flip-chip mounted horizontal LEDs |
JP2009130266A (ja) * | 2007-11-27 | 2009-06-11 | Toshiba Corp | 半導体基板および半導体装置、半導体装置の製造方法 |
US8167674B2 (en) * | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8940561B2 (en) * | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
US8058088B2 (en) | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
US8178888B2 (en) * | 2008-02-01 | 2012-05-15 | Cree, Inc. | Semiconductor light emitting devices with high color rendering |
US9557033B2 (en) * | 2008-03-05 | 2017-01-31 | Cree, Inc. | Optical system for batwing distribution |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
US9147812B2 (en) * | 2008-06-24 | 2015-09-29 | Cree, Inc. | Methods of assembly for a semiconductor light emitting device package |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
US7955875B2 (en) * | 2008-09-26 | 2011-06-07 | Cree, Inc. | Forming light emitting devices including custom wavelength conversion structures |
KR20110108342A (ko) * | 2008-12-02 | 2011-10-05 | 유니버시티 오브 센트럴 플로리다 | 에너지 변환 장치 |
JP5330880B2 (ja) * | 2009-03-27 | 2013-10-30 | 学校法人 名城大学 | 発光ダイオード素子及びその製造方法 |
US8890773B1 (en) | 2009-04-01 | 2014-11-18 | Federal Law Enforcement Development Services, Inc. | Visible light transceiver glasses |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
US20110012141A1 (en) | 2009-07-15 | 2011-01-20 | Le Toquin Ronan P | Single-color wavelength-converted light emitting devices |
US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
US8466611B2 (en) | 2009-12-14 | 2013-06-18 | Cree, Inc. | Lighting device with shaped remote phosphor |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US8508127B2 (en) * | 2010-03-09 | 2013-08-13 | Cree, Inc. | High CRI lighting device with added long-wavelength blue color |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US8410679B2 (en) | 2010-09-21 | 2013-04-02 | Cree, Inc. | Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface |
US9515229B2 (en) | 2010-09-21 | 2016-12-06 | Cree, Inc. | Semiconductor light emitting devices with optical coatings and methods of making same |
US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
CA2824756C (fr) | 2011-01-14 | 2014-12-23 | Federal Law Enforcement Development Services, Inc. | Procede de fourniture de lumens et de suivi de la consommation de lumens |
US8589120B2 (en) | 2011-01-28 | 2013-11-19 | Cree, Inc. | Methods, systems, and apparatus for determining optical properties of elements of lighting components having similar color points |
US9831220B2 (en) | 2011-01-31 | 2017-11-28 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US9053958B2 (en) | 2011-01-31 | 2015-06-09 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9673363B2 (en) | 2011-01-31 | 2017-06-06 | Cree, Inc. | Reflective mounting substrates for flip-chip mounted horizontal LEDs |
US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
US9401103B2 (en) | 2011-02-04 | 2016-07-26 | Cree, Inc. | LED-array light source with aspect ratio greater than 1 |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
US10098197B2 (en) | 2011-06-03 | 2018-10-09 | Cree, Inc. | Lighting devices with individually compensating multi-color clusters |
US8921875B2 (en) | 2011-05-10 | 2014-12-30 | Cree, Inc. | Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods |
US8814621B2 (en) | 2011-06-03 | 2014-08-26 | Cree, Inc. | Methods of determining and making red nitride compositions |
US8729790B2 (en) | 2011-06-03 | 2014-05-20 | Cree, Inc. | Coated phosphors and light emitting devices including the same |
US8906263B2 (en) | 2011-06-03 | 2014-12-09 | Cree, Inc. | Red nitride phosphors |
US8747697B2 (en) | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
US8684569B2 (en) | 2011-07-06 | 2014-04-01 | Cree, Inc. | Lens and trim attachment structure for solid state downlights |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
US10490712B2 (en) | 2011-07-21 | 2019-11-26 | Cree, Inc. | Light emitter device packages, components, and methods for improved chemical resistance and related methods |
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US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
US9318669B2 (en) | 2012-01-30 | 2016-04-19 | Cree, Inc. | Methods of determining and making red nitride compositions |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
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CN104937699B (zh) * | 2012-11-30 | 2018-12-18 | Lg 伊诺特有限公司 | 外延晶片和使用其的开关元件及发光元件 |
US9316382B2 (en) | 2013-01-31 | 2016-04-19 | Cree, Inc. | Connector devices, systems, and related methods for connecting light emitting diode (LED) modules |
US9039746B2 (en) | 2013-02-08 | 2015-05-26 | Cree, Inc. | Solid state light emitting devices including adjustable melatonin suppression effects |
US9030103B2 (en) | 2013-02-08 | 2015-05-12 | Cree, Inc. | Solid state light emitting devices including adjustable scotopic / photopic ratio |
US9565782B2 (en) | 2013-02-15 | 2017-02-07 | Ecosense Lighting Inc. | Field replaceable power supply cartridge |
CN103236478B (zh) * | 2013-02-28 | 2015-06-10 | 溧阳市宏达电机有限公司 | 一种高亮度碳化硅外延发光二极管 |
US9055643B2 (en) | 2013-03-13 | 2015-06-09 | Cree, Inc. | Solid state lighting apparatus and methods of forming |
WO2014160096A1 (fr) | 2013-03-13 | 2014-10-02 | Federal Law Enforcement Development Services, Inc. | Commande d'éclairage à del et système de gestion |
US9240528B2 (en) | 2013-10-03 | 2016-01-19 | Cree, Inc. | Solid state lighting apparatus with high scotopic/photopic (S/P) ratio |
US20150198941A1 (en) | 2014-01-15 | 2015-07-16 | John C. Pederson | Cyber Life Electronic Networking and Commerce Operating Exchange |
US10477636B1 (en) | 2014-10-28 | 2019-11-12 | Ecosense Lighting Inc. | Lighting systems having multiple light sources |
KR102529980B1 (ko) | 2014-11-06 | 2023-05-08 | 루미리즈 홀딩 비.브이. | 상부 접점 아래에 트렌치를 갖는 발광 디바이스 |
US10431568B2 (en) | 2014-12-18 | 2019-10-01 | Cree, Inc. | Light emitting diodes, components and related methods |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
US9568665B2 (en) | 2015-03-03 | 2017-02-14 | Ecosense Lighting Inc. | Lighting systems including lens modules for selectable light distribution |
US9651216B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting systems including asymmetric lens modules for selectable light distribution |
US9746159B1 (en) | 2015-03-03 | 2017-08-29 | Ecosense Lighting Inc. | Lighting system having a sealing system |
US9651227B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Low-profile lighting system having pivotable lighting enclosure |
CN107438899B (zh) | 2015-03-31 | 2021-04-30 | 科锐Led公司 | 具有包封的发光二极管和方法 |
WO2016176625A1 (fr) | 2015-04-30 | 2016-11-03 | Cree, Inc. | Composants d'éclairage à semi-conducteurs |
USD785218S1 (en) | 2015-07-06 | 2017-04-25 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US10074635B2 (en) | 2015-07-17 | 2018-09-11 | Cree, Inc. | Solid state light emitter devices and methods |
USD782093S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
USD782094S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US9651232B1 (en) | 2015-08-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting system having a mounting device |
US20170048953A1 (en) | 2015-08-11 | 2017-02-16 | Federal Law Enforcement Development Services, Inc. | Programmable switch and system |
JP2017092075A (ja) * | 2015-11-02 | 2017-05-25 | 株式会社ソディック | 発光素子 |
CN109791968A (zh) | 2016-07-26 | 2019-05-21 | 克利公司 | 发光二极管、组件和相关方法 |
WO2018052902A1 (fr) | 2016-09-13 | 2018-03-22 | Cree, Inc. | Diodes électroluminescentes, composants et procédés associés |
US10804251B2 (en) | 2016-11-22 | 2020-10-13 | Cree, Inc. | Light emitting diode (LED) devices, components and methods |
US10439114B2 (en) | 2017-03-08 | 2019-10-08 | Cree, Inc. | Substrates for light emitting diodes and related methods |
US10410997B2 (en) | 2017-05-11 | 2019-09-10 | Cree, Inc. | Tunable integrated optics LED components and methods |
EP3428975A1 (fr) | 2017-07-14 | 2019-01-16 | AGC Glass Europe | Dispositifs électroluminescents ayant un substrat de saphir ou de carbure de silicium antireflets et leurs procédés de formation |
US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
US11107857B2 (en) | 2017-08-18 | 2021-08-31 | Creeled, Inc. | Light emitting diodes, components and related methods |
US11101248B2 (en) | 2017-08-18 | 2021-08-24 | Creeled, Inc. | Light emitting diodes, components and related methods |
US10361349B2 (en) | 2017-09-01 | 2019-07-23 | Cree, Inc. | Light emitting diodes, components and related methods |
US10541353B2 (en) | 2017-11-10 | 2020-01-21 | Cree, Inc. | Light emitting devices including narrowband converters for outdoor lighting applications |
US10734560B2 (en) | 2017-11-29 | 2020-08-04 | Cree, Inc. | Configurable circuit layout for LEDs |
DE102017131354A1 (de) * | 2017-12-27 | 2019-06-27 | Infineon Technologies Ag | Ein Halbleiterbauelement mit breitem Bandabstand und ein Verfahren zum Bilden eines Halbleiterbauelements mit breitem Bandabstand |
US10573543B2 (en) | 2018-04-30 | 2020-02-25 | Cree, Inc. | Apparatus and methods for mass transfer of electronic die |
US11121298B2 (en) | 2018-05-25 | 2021-09-14 | Creeled, Inc. | Light-emitting diode packages with individually controllable light-emitting diode chips |
US10453827B1 (en) | 2018-05-30 | 2019-10-22 | Cree, Inc. | LED apparatuses and methods |
US11101410B2 (en) | 2018-05-30 | 2021-08-24 | Creeled, Inc. | LED systems, apparatuses, and methods |
WO2019236325A1 (fr) | 2018-06-04 | 2019-12-12 | Cree, Inc. | Appareils del, et procédés |
US10964866B2 (en) | 2018-08-21 | 2021-03-30 | Cree, Inc. | LED device, system, and method with adaptive patterns |
US11233183B2 (en) | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11101411B2 (en) | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3986193A (en) * | 1973-02-08 | 1976-10-12 | Jury Alexandrovich Vodakov | Semiconductor SiCl light source and a method of manufacturing same |
US3999206A (en) * | 1974-11-04 | 1976-12-21 | Vladimir Alexandrovich Babenko | Semiconductor indicating device and method for production of same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3508015A (en) * | 1966-06-09 | 1970-04-21 | Nat Res Corp | Electroluminescent diode and sound recording system |
US3530324A (en) * | 1967-05-16 | 1970-09-22 | Norton Research Corp | Electroluminescent silicon carbide diode with sharply peaked light emission from the edge of the junction |
US3458779A (en) * | 1967-11-24 | 1969-07-29 | Gen Electric | Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region |
US3535469A (en) * | 1968-05-27 | 1970-10-20 | North Research Corp | Masked electroluminescent diode and film recording device utilizing the same |
US3649384A (en) * | 1969-03-27 | 1972-03-14 | Norton Research Corp | Process for fabricating silicon carbide junction diodes by liquid phase epitaxial growth |
US3773553A (en) * | 1969-03-27 | 1973-11-20 | Norton Co | Silicon carbide junction diode |
US3565703A (en) * | 1969-07-09 | 1971-02-23 | Norton Research Corp | Silicon carbide junction diode |
US3611064A (en) * | 1969-07-14 | 1971-10-05 | Gen Electric | Ohmic contact to n-type silicon carbide, comprising nickel-titanium-gold |
US3715636A (en) * | 1972-01-03 | 1973-02-06 | Gen Electric | Silicon carbide lamp mounted on a ceramic of poor thermal conductivity |
SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
DE2364989C3 (de) * | 1973-12-28 | 1979-10-18 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat |
DE3208638A1 (de) * | 1982-03-10 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Lumineszenzdiode aus siliziumkarbid |
JPS5994888A (ja) * | 1982-11-22 | 1984-05-31 | Sanyo Electric Co Ltd | SiC多色発光ダイオ−ド及びその製造方法 |
JPH0797658B2 (ja) * | 1987-10-20 | 1995-10-18 | 三洋電機株式会社 | SiC青色発光ダイオード |
JPH0797659B2 (ja) * | 1987-10-20 | 1995-10-18 | 三洋電機株式会社 | SiC青色発光ダイオード |
-
1989
- 1989-08-28 US US07/399,301 patent/US5027168A/en not_active Expired - Lifetime
- 1989-12-12 MY MYPI89001742A patent/MY105078A/en unknown
- 1989-12-13 EP EP90900695A patent/EP0448607B1/fr not_active Expired - Lifetime
- 1989-12-13 JP JP2501400A patent/JPH0821730B2/ja not_active Expired - Lifetime
- 1989-12-13 DE DE68921766T patent/DE68921766D1/de not_active Expired - Lifetime
- 1989-12-13 AT AT90900695T patent/ATE120035T1/de not_active IP Right Cessation
- 1989-12-13 CA CA002005377A patent/CA2005377C/fr not_active Expired - Lifetime
- 1989-12-13 AU AU47592/90A patent/AU4759290A/en not_active Abandoned
- 1989-12-13 KR KR1019900701778A patent/KR910700548A/ko not_active Application Discontinuation
- 1989-12-13 WO PCT/US1989/005555 patent/WO1990007196A2/fr active IP Right Grant
- 1989-12-14 CN CN89109795A patent/CN1019436B/zh not_active Expired
- 1989-12-14 MX MX018731A patent/MX174445B/es unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3986193A (en) * | 1973-02-08 | 1976-10-12 | Jury Alexandrovich Vodakov | Semiconductor SiCl light source and a method of manufacturing same |
US3999206A (en) * | 1974-11-04 | 1976-12-21 | Vladimir Alexandrovich Babenko | Semiconductor indicating device and method for production of same |
Non-Patent Citations (8)
Title |
---|
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Japan, 25-27 August 1987; N. KURODA et al.: "Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures", pages 227-230 * |
Japanese Journal of Applied Physics, Volume 19, No. 7, July 1980, (Tokyo, JP), S. NISHINO et al.: "Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition", pages L353-L356 * |
Journal of Applied Physics, Volume 53, No. 10, October 1982, (New York, US), L. HOFFMANN et al.: "Silicon Carbide Blue Light Emitting Diodes with Improved External Quantum Efficiency", pages 6962-6967 * |
PATENT ABSTRACTS OF JAPAN, Volume 13, No. 346 (E-798) (3694) 3 August 1989; & JP-A-1106476 (Sanyo Electric Co Ltd) 24 April 1989 * |
PATENT ABSTRACTS OF JAPAN, Volume 8, No. 209 (E-268) (1646), 22 September 1984; & JP-A-5994888 (Sanyo Denki K.K.) 31 May 1984 * |
Solid-State Electronics, Volume 19, No. 10, October 1976, Pergamon Press, (Oxford, GB), W. V. MUNCH et al.: "Silicon Carbide Light-Emitting Diodes with Epitaxial Junctions", pages 871-874 * |
Soviet Physics Semiconductors, Volume 19, No. 10, October 1985, American Institute of Physics, (Woodbury, NY, US), S.F. AVRAMENKO et al.: "Edge Electroluminescence of 6H-SiC", page 1147 * |
Soviet Technical Physics Letters, Volume 11, No. 2, February 1985, (New York, US), V.A. DMITRIEV et al.: "Silicon Carbide Light-Emitting Diodes for the Blue-Violet Region", pages 101-102 * |
Also Published As
Publication number | Publication date |
---|---|
MX174445B (es) | 1994-05-17 |
CN1044549A (zh) | 1990-08-08 |
KR910700548A (ko) | 1991-03-15 |
AU4759290A (en) | 1990-07-10 |
JPH05502546A (ja) | 1993-04-28 |
DE68921766D1 (de) | 1995-04-20 |
CN1019436B (zh) | 1992-12-09 |
US5027168A (en) | 1991-06-25 |
ATE120035T1 (de) | 1995-04-15 |
JPH0821730B2 (ja) | 1996-03-04 |
MY105078A (en) | 1994-07-30 |
CA2005377C (fr) | 1995-05-30 |
CA2005377A1 (fr) | 1990-06-14 |
WO1990007196A2 (fr) | 1990-06-28 |
EP0448607B1 (fr) | 1995-03-15 |
EP0448607A1 (fr) | 1991-10-02 |
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