USRE49488E1 - Lithography system, method of clamping and wafer table - Google Patents

Lithography system, method of clamping and wafer table Download PDF

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USRE49488E1
USRE49488E1 US16/427,295 US201916427295A USRE49488E US RE49488 E1 USRE49488 E1 US RE49488E1 US 201916427295 A US201916427295 A US 201916427295A US RE49488 E USRE49488 E US RE49488E
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Prior art keywords
wafer
wafer table
liquid
target
vacuum environment
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Guido De Boer
Michel Pieter Dansberg
Pieter Kruit
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ASML Netherlands BV
Mapper Lithopraphy IP BV
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ASML Netherlands BV
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Assigned to ASML NETHERLANDS B.V. reassignment ASML NETHERLANDS B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: J.J. WITTEKAMP
Assigned to MAPPER LITHOGRAPHY IP B.V. reassignment MAPPER LITHOGRAPHY IP B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DANSBERG, MICHEL PIETER, DE BOER, GUIDO, KRUIT, PIETER
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Definitions

  • the present invention relates to a Lithography system for projecting an image pattern on to a target surface such as a wafer.
  • the target to be patterned is subjected to incidence of photons or charged particles such as ions and electrons. So as to realize high precision patterning of the target, it is to be firmly bonded or connected to a target table by means of which the target is moved relative to the source of incidence, at least if position measurement of said target is performed via said target table. Such movement is performed at least in a direction essentially transversely to a main direction of incidence. It is preferably also to remain in position relative to said table during handling of the target, e.g.
  • the position where the target, commonly a wafer, is processed in a modern lithography system is a target carrying means, commonly a chuck or a wafer table, here alternatively denoted as a reference to the target.
  • a target carrying means commonly a chuck or a wafer table
  • Such reference, i.e. carrying means is shaped ultimately flat so as to support minimization of positioning and/or focus errors during lithographic exposure of the target.
  • the target is at least during exposure maintained in close contact to the reference by the exertion of a force thereon. In this manner the target is also maintained optimally within focus depth of the lithography system in which it is included.
  • said force is realized as a pulling force, generated by electrostatic and or vacuum means acting on said target.
  • Such solutions may have the disadvantage of carrying tubes, cables and/or wiring with the table, thereby increasing the complexity of a required, highly refined positioning of said table relative to a projection means of the litho system.
  • the disadvantage is also present in systems where the target is to be taken out and in integrally with the target table give the coupling and decoupling actions which are then to be performed on cabling, wiring and/or conduits.
  • Still further and important requirements to lithography system for patterning a target include the realization of flatness thereof, i.e. a requirement towards cancellation of wafer bow and warp, which is done by pulling the target to a reference.
  • the means for performing this function are normally the same as or limited to those for performing the function of keeping the target in position on said table within an exposure field.
  • the means for maintaining said target in position and/or for pulling the same to a flat reference may be loaded by thermal expansion and contraction due to an energy load of a projection system of the system, as included for patterning said wafer.
  • heat dissipation may be addressed by heat dissipating means
  • the transport of heat induced to said target towards said heat dissipating means may still be a limiting factor in any solution towards heat dissipation. It is therefore a further object of the present invention to realize a method for clamping and a clamping means which optimally addresses the issue of heat conduction while remaining practical in use and while minimally if not totally not distorting a positioning function of the table or chuck carrying said target.
  • PCT/US01/26772 discloses a wafer clamp in a lithography system.
  • the clamp is also used for transport of heat induced by a charged particle beam on a target.
  • the clamping and releasing of the target is in this device performed by applying “one or more” phase transitions to a clamping component that is applied between a wafer and a supporting structure. These phase transitions “facilitate various operations throughout the process” and “ensure that the wafer may be easily loaded and released from the structure.
  • the clamping component is applied in a liquid or gaseous form, and brought into a solid state by active cooling of the support structure, so as to achieve a solid clamping of wafer to said structure. It is here concluded that such a manner of clamping can basically be denoted as gluing the wafer.
  • the above known clamping device for a lithography system is indicated to be “particularly useful in processes that require wafer cooling”, in particular in vacuum due to a large contact area between component and wafer, and a high thermal conductivity of the clamping component.
  • a disadvantage of this known system is the plurality of conduits required for separately delivering the clamping component and a circulated chilled fluid to the target table.
  • US patent publication 2005/0186517 relates to a process for a lithography system, of attaching a wafer to a chuck aligning a wafer to a wafer stage and subsequently exposing the wafer.
  • it teaches to cause opposite stress against wafer expansion after an initial stress relieving expansion of a wafer chuck, thereby potentially doubling the amount of allowed heating of the wafer before undesired slip between wafer and chuck occurs.
  • the attaching process is exemplified by a process using electrostatic clamping and by a process of using vacuum clamping, also requiring cabling and or conduits to a moveable table carrying said target.
  • the present invention now, seeks to realise a clamping system for contemporary lithography systems, i.e. with highly refined pixel resolutions and highly refined accurately at relative positioning of target and source. Constraints herewith encompass a vacuum operable system and optimal heat conduction from an exposed target to a target carrying means or chuck. In realising such, the invention proposes to use a stationary liquid film, capillary included between said carrying means and said target for performing both said heat conduction function and a clamping function by the same liquid means.
  • the present invention surprisingly departs from an idea that strong pulling forces may be exerted to liquids like water if the conditions thereto are set properly, as is in very general wording set out in the article “The Physics of negative pressure”, published by Discover on Mar. 27, 2003. It was conceived that in the case of lithography systems, such settings could be reached if a liquid was maintained stationary in capillary manner between the surfaces of a target of wafer and a target carrying means or chuck, which surfaces are for obvious reasons normally maintained as flat as possible.
  • the liquid layer is of such small magnitude that boiling of the liquid, e.g. water, can not occur, even when the liquid is at negative pressure.
  • This phenomenon is also of practical value at heat conduction.
  • a liquid at negative pressure may be applied for providing the force required for pulling a target or wafer to a flat reference.
  • a liquid in a small gap, as between plates formed by said reference and said target exerts a force on the plates constructing the gap. This force, which apart from the height of the gap depends on the material properties of liquid and plates, is applied for realising the force for maintaining a target and a target table integral.
  • FIG. 1 in sectional view schematically illustrates a liquid, capillary included between two plate like structures, i.e. surfaces of materials A and B;
  • FIG. 2 is a graphical illustration of the relation of capillary pressure drop for a fused silica optical flat and a silicon wafer, with gap height between such plates capillary including water;
  • FIGS. 3 and 4 are schematic illustrations of implementations of the idea underlying the present invention.
  • FIG. 5 is a schematic illustration of a first manner of introducing liquid in the capillary gap between table and target
  • FIG. 6 by the provision of a circumferential gutter schematically illustrates a measure for minimising evaporation of liquid from the capillary gap
  • FIG. 7 is a figurative illustration of a manner of realising a liquid layer between target and target table
  • FIG. 8 is a process flow for a lithographic system, at least part thereof according to the present invention.
  • FIG. 9 is a schematic illustration of the use of spacers.
  • FIG. 1 shows a lithography target, here in the form of a wafer 1 , which normally moves relative to e.g. a charged particle beam column of a litho apparatus, or other kind of beam source for lithography, by means of an actuated target table or chuck, nut indicated in this drawing.
  • a volume of liquid 3 in included capillary Between a top side of such target table 2 and said target 1 , a volume of liquid 3 in included capillary.
  • the target 1 and top surface 2 have a mutual nominal distance of gap height h.
  • the volume of liquid preferably water, is such that the radius of the target, as taken in top view, is virtually met by a radius R of the capillary included liquid 3 .
  • the radius of an incircle of the target is at least met by the radius of an excircle fitting the volume of liquid within the boundary of the target.
  • the liquid is to remain, preferably only with a small distance thereto, within the boundaries of the target.
  • the thus included liquid 3 forms a liquid surface 4 , alternatively denoted fluid interface 4 at it's outer periphery which, as taken in the section according to FIG. 1 , is generally concavely shaped, due to adhesive connection of the liquid to the target 1 and the top side 2 of a target table respectively.
  • This concave surface 4 tends to maintain its shape at pulling the target and target table apart, and depends on pressure differential.
  • the concaveness of the interface 4 depends on respective contact angles ⁇ 1 and ⁇ 2 , which in turn depend on the material of table 2 , and target 1 , in this case material A and material B respectively.
  • the capillary pressure ⁇ P cap is the pressure drop over the fluid interface 4 at the edge of the volume of liquid 3 .
  • the capillary pressure may according to yet further insight underlying the invention defined by a simplified equation:
  • ⁇ ⁇ P capillary - ⁇ liquid ( cos ⁇ ( ⁇ 1 ) + cos ⁇ ( 0 2 ) ) h ( 1 )
  • FIG. 2 illustrates the capillary pressure drop, which is taken as indicative for an amount of force that can be exerted, at pulling apart the plates having included a fluid, in casu water, as described above.
  • the depicted curve is derived from a calculation involving two plates, i.e. contacting faces and water, one being a silicon wafer, and the other a fused silica optical flat. The validity of the curve has been tested on the basis of calculations and measurements involving glass plates instead of SiO2.
  • the present curve which compares to that of glass and water, indicates that sufficient pulling power can be developed at gap heights as of nominally 10 ⁇ m and below, which, even at nominal heights of 5 ⁇ m is well in reach of regular lithographic applications.
  • FIG. 3 illustrates a practical elaboration on the invented principle and schematically shows part of a lithographic system, including a target 1 embodied by a wafer, a top side 2 of a wafer table 8 or chuck part, a liquid 3 in the form of water, and so called viton or rubber O-rings 9 .
  • the O-rings 9 seal off liquid vapour evaporating from the gap containing liquid 3 by being inserted in a rim part of reduced height of the wafer table 8 .
  • the top side of the O-ring is set to a level corresponding in height to that of, and preferably being slightly higher than that of burls 7 on the top side of wafer table 8 .
  • the O-ring may be compressed between table and wafer without undue force requirement, however sufficient for preventing leakage of vapour, which is especially an issue in the vacuum environment in which such lithography means may be applied.
  • the O-ring which is here of a thickness in the range from 0 to 5 mm diameter, thus form a C-ring, implying that the pressure required for compressing the O-ring is kept minimal.
  • an O-ring or kind-like elastically deformable means is applied circumferentially around the target.
  • larger forces may be applied between target and elastically deformable means, which allows the use of elastically deformable means with higher roughness, which is easier to get hands on, and relatively economic at purchase.
  • vapour limiting ring 9 A supported by an outer rim of the table, largely closing off the circumferential opening of the liquid gap, by leaving a very small vertical distance 9 B between ring 9 A, and target 1 , supported by an outer rim of the table. In particular this may be 10 to 20 times smaller than the gap height between target and target table.
  • the invention may further encompass the presence of one or more openings that can be closed for entry of fluid, which may be gas, and opened for release of fluid in said wafer table, thereby enabling release of a target from the table.
  • a volumetrically highly precise fluid entry tube is provided preferably centrally.
  • the invention may also include a pressing means for initially pressing the target into firm contact with said target table, i.e. with a multiplicity of burls 7 thereon.
  • One embodiment for such pressing means involves a high pressure directed perpendicular towards the top side of the target 1 , thereby eliminating any bow of the target and allowing the capillary action to be installed.
  • One favourable manner of realising such pressure in accordance with a further aspect of the present invention is to direct a stream of fluidal means such as wind and water on to said target.
  • FIG. 5 illustrates a preferred manner of operation in which initial clamping alternatively denoted chucking, i.e. removing bow in the target is removed and in which liquid is introduced between target and table in a more or less combined manner.
  • a central entry channel 10 is provided in said target table, provided with a valve V.
  • the wafer is chucked to the wafer table by a vacuum force generated by a vacuum pressure P vac , applied via a plurality of circumferentially present openings 10 B.
  • P vac vacuum pressure generated by a vacuum pressure
  • the valve V is opened and the liquid will be sucked into the gap between the wafer and the wafer table.
  • the filling speed of the water that flows into the gap is determined by the sum of the capillary pressure P cap and the pressure difference between the prevailing vacuum pressure P vac and an overpressure P op . and present or applied at the entry of channel 10 , i.e. at a non-illustrated fluid source.
  • Overpressure P op . is defined to be higher than the pressure P env prevailing over the target. It is for practical reasons limited to 1 bar, so as not to disturb the position of the target on the table, and the effective liquid pressure P liq is calculated with.
  • FIG. 6 illustrates a manner of preventing, at least further minimising evaporation of liquid from the capillary gap, i.e. from between target and target table.
  • a gutter of significantly larger width than the capillary gap height is made for containing non capillary included liquid 3 ′.
  • the fluid 3 ′ is of the same type as the capillary included fluid 3 . It is however provided with a significantly larger surface or interface area.
  • this gutter could be filled using the liquid source with pressure P op . for channel 10 , be it via a separate lead and valve, preferably separate filling means are provided, i.e. independent from the supply of capillary included fluid.
  • the filling means may be any independent filling means, e.g. including a separate liquid source, dedicated leads and valve towards said gutter, and/or a fluid pump.
  • FIG. 7 figuratively illustrates an alternative manner of introducing said capillary layer.
  • the fluid is here entered to either one or both surfaces of table and target by depositing droplets 11 , e.g. by spraying.
  • the deposition in a controlled manner so as to achieve evenly distributed liquid parts, e.g. by placing droplets by means of a droplet dispensing means, for example having one or more droplet dispensing mouths at predefined locations.
  • droplets are deposited on the target table 8 .
  • various openings 12 for prevention of air inclusion are distributed in a pre-defined manner, preferably generally evenly distributed, over the area of the target table.
  • the surface of the target table is defined by the presence of burls 7 , which burls are for the sake of withstanding the clamping force of the capillary liquid included with an increased density of distribution. In this manner an attracted target may remain flat, i.e. will not bow between the burls under the force of the capillary fluid.
  • one or both of the contacting surfaces of target and table may be surface treated, or coated with a material for influencing a contacting angle between the liquid and the relevant contacting surface, in particular towards a desired clamping pressure, more in particular at operating conditions, i.e. in vacuum.
  • a desired clamping pressure more in particular at operating conditions, i.e. in vacuum.
  • the target table will be coated. So as to still influence the capillary pressure drop in the clamp according to the present invention, it is conceived to adapt the burl height to a specific, desired pressure drop, given the conditions of liquid material, target and target table contacting face material.
  • Such adaptation may for instance be made to meet a minimum desired clamping force and to adapt to a specific combination of clamping force and distribution or mutual distance of burls, in particular to prevent local bow of the target between the burls, given a clamping pressure and resulting force on the target.
  • a minimum burl height is hereby taken into account, while it is also considered that burl density may be adapted, for instance it may be increased to meet a minimum required clamping force.
  • Said minimum burl height is considered in respect of a measure to accommodate dust or other contaminating particles between the burls and within the gap height. the latter of course within the constraint of a measure according to the invention of maintaining the gap height to such minimum that boiling of the fluid in between cannot occur.
  • FIG. 8 illustrates a relevant part of a process flow for a lithographic apparatus or system improved with the present invention, where the target is formed by a wafer.
  • the process part departs from the action and status of clean wafer table CT, indicated in the lower left corner. From there two alternative process paths may be followed.
  • the first and above illustrated path part is characterised by first step WOT of placing a wafer on the target table, second step LIG of liquid flow into the gap between table and wafer through conduits in the table, and third step CS of sealing the conduits for water, i.e. liquid supply and air inclusion removal.
  • the second possibility of implementing a process in accordance with the invention is indicated by the lower branch, showing the steps of first applying liquid on the table LOT, placing a wafer on the table WOT, and conduit sealing CS, which in this case merely encompasses sealing the air inclusion discharge.
  • Such sealing is preferably performed in a central discharge or supply conduit which is linked to the table surface via multiple branches.
  • step IT the table and wafer are inserted in a part of the litho system which is to be brought to vacuum, the wafer is processed in step PW, table and wafer are removed from the apparatus in step RT, the water is detached from the table in step DW amongst others by removing or opening any conduit seal, and the wafer table is cleaned.
  • water is applied by at least one, but alternatively also a multitude of water conduits through which the water is supplied to the gap.
  • filling of the gap is performed by relying on a sufficiently large capillary pressure for allowing water, or any other relevant liquid, to pull itself into the gap.
  • this process is improved, i.e. made faster by using external pressure to increase the pressure during filling.
  • the air inclusion openings are used to supply a lower pressure.
  • a typical value for the pitch of the burls is 3 [mm].
  • the height of the burl determines the gap, and is in accordance with the invention used for regulating clamping pressure given other system conditions such as materials and dimensions and vice versa.
  • the surface per burl is made sufficient so as not to deform or brake under capillary pressure.
  • the diameter per burl is approximately 25 ⁇ m or more. It is preferred that burls are shaped generally rounded, i.e. without edges, to reduce the possibility of particulate contamination during cleaning. These are particles from a tissue during wiping of the table.
  • spacers 15 are dispersed uniformly over the carrying means 8 as shown in FIG. 9 , for example by being sprayed from over the carrying means 8 or by applying a dispersed solution of the spacers 15 , thus providing spacers 15 .
  • the spacers 15 are dispersed in the liquid 3 which ultimately forms the layer of stationary liquid.
  • a lithography system for example for projecting an image or an image pattern on to a target ( 1 ) such as a wafer, said target being included in said system by means of a target table ( 2 ), clamping means being present for clamping said target on said table, wherein said clamping means comprises a layer of stationary liquid ( 3 ), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target ( 1 ) and target table ( 2 ), a pressure drop (P Cap ) arises.
  • the pressure drop results in a pressure (P liq ) in said volume of Liquid, which is below its vapour pressure.
  • the pressure drop is realized in vacuum.
  • a pressure (P env ) arises, which is significantly lower than an actual environmental pressure (P env ) for said layer ( 3 ).
  • the inclusion is arranged such that said lower pressure (P Liq ) realizes a negative pressure at vacuum condition, in particular at typical lithographic vacuum condition.
  • the wafer table is provided with spacers ( 7 , 15 ) for defining the thickness of the layer of stationary liquid ( 3 ).
  • the wafer table is provided with burls, and the liquid ( 3 ) is maintained at a capillary condition (P Cap ) by means of a predefined burl height, i.e., gap height between target table and target, maintained at such minimal level that given the clamping conditions, the liquid ( 3 ) is prevented from a possibility to boil, i.e., from a possibility to cavitate.
  • P Cap capillary condition
  • the capillary condition is realized by so maintaining a nominal mutual distance of between 0, 1 and 10 ⁇ m between target ( 1 ) and target table ( 8 ).
  • the circumferential sealing means such as 0-rings are included, in particular for preventing liquid from vaporization.
  • the sealing means is composed as an elastically deformable means, in particular having a generally C-shaped form as taken in cross section.
  • the 0-ring or sort means is included circumferentially around said target.
  • the sealing means is composed of an O-ring provided with circumferentially extending, slotted cut out, open to a radial side of the ring, in particular to the radial inner side, and extending over a substantial part of the diameter of the ring, in particular up to around the center of the 0-ring.
  • the circumferential sealing means is composed as a circumferential air gap ( 9 B) between target table ( 8 ) and target of a height equal or smaller than the height realized for maintaining said capillary condition.
  • the wafer table is provided with a gutter for containing fluid, the gutter being of a width significantly larger than the height of the gap, and located circumferential to a target carrying part of the target table, within the circumference defined by said sealing means for sealing said capillary included liquid between said target and said target table.
  • the table is provided with closeable discharge openings, in particular for release of air, at least gaseous material at entry of capillary liquid, in particular centrally closable.
  • the openings are included in a recessed circumferential rim of said table, preferably circumferentially to a wafer carrying part of said wafer table, i.e., comprising chucks, in particular within the circumference defined by said sealing means.
  • the discharge openings are included generally evenly spread over the surface of said table.
  • the clamping liquid is composed of water.
  • the table is provided with at least one preferably centrally closeable entry opening, in particular for entry of capillary liquid.
  • entry of fluid is realized by spread application of liquid on to either one contact face of table and target.
  • the liquid is deposited in a controlled manner by means of a liquid depositing means releasing controlled volumes of liquid drops or lines on the table surface.
  • liquid is deposited by a precise depositing means comprising a plurality of depositing mouths.
  • the density of burls on the contacting face of said table is determined by a nominal pitch value within the range of 1 to 3 mm.
  • At least one of either mutual contacting face of target and table is provided with a coating of different material than of said face base.
  • initial pressure means are provided for realizing an initial firm contact between target and table.
  • an initial pressure means is realized by means of one or more e.g., centrally provided openings comprising a valve in a supply channel connected to such opening, either in a channel central to all such openings or in each separate channel, which valve is closed in advance of providing fluid to the gap between target and target table, and which gap is exposed to vacuum pressure via further openings, circumferential to a wafer carrying part of said wafer table.
  • initial pressure means comprises a pump such as a water pump and an air pump or blower, in particular for realizing a first contact between target and table by urging a stream of flowing material on to said target, in particular one of air and water.
  • the target table is adapted for loose inclusion, i.e., without connection of conduits in a lithographic apparatus for treating a target carried by the table.
  • a wafer table for insertion into a vacuum environment such as in a lithographic apparatus, is provided with clamping means adapted to the use of a stationary layer of liquid, for clamping a target such as a wafer.
  • the clamping are adapted to realize said clamping outside the vacuum space of a lithographic apparatus, in particular before insertion thereof into the vacuum compartment of a lithographic apparatus for treating a target carried by said target table.
  • clamping an object having a generally flat contacting face to another object also having a generally flat contacting face is provided, wherein for the purpose of mutual clamping of said objects a layer of stationary held liquid is maintained capillary between said faces.
  • the objects are part of a vacuum operable lithographic system.
  • the two objects are pressed to one another, in particular by an air stream, in order to allow installment of said capillary inclusion as a clamping means.
  • the wafer table is taken out of the lithography system for replacing a target thereon.
  • a wafer table in a lithographic apparatus is exchanged with another one for the purpose of exchanging a target in said lithographic apparatus.
  • the target table is treated outside a lithographic apparatus, in which treatment the temperature thereof is conditioned.

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US14/135,372 US9665013B2 (en) 2007-07-13 2013-12-19 Lithography system, method of clamping and wafer table
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TWI541615B (zh) 2007-07-13 2016-07-11 瑪波微影Ｉｐ公司 在微影裝置中交換晶圓的方法
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
KR101586984B1 (ko) * 2009-02-22 2016-01-20 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 머신을 위한 준비 유닛
GB2469112A (en) 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Wafer support using controlled capillary liquid layer to hold and release wafer
GB2469114A (en) * 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Clamp preparation unit, unclamping unit, arrangement, method for clamping a substrate, and a method of unclamping a substrate
EP2399279B1 (en) 2009-02-22 2018-10-31 Mapper Lithography IP B.V. Substrate support structure, clamp preparation unit, and lithography system
GB2469113A (en) * 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Substrate Support Structure and Method for maintaining a substrate clamped to a substrate support Structure
JP5788416B2 (ja) * 2010-02-19 2015-09-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． 基板支持構造及び基板支持構造と基板支持構造の表面上にクランプされている基板との組み合わせ
NL1037754C2 (en) * 2010-02-26 2011-08-30 Mapper Lithography Ip Bv Substrate support structure, clamp preparation unit, and lithography system.
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