JP5372928B2 - リソグラフィシステム、クランプ方法及びウェーハテーブル - Google Patents
リソグラフィシステム、クランプ方法及びウェーハテーブル Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- General Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (23)
- ターゲット(1)にイメージ又はイメージパターンを投影するためのリソグラフィシステムであって、
前記ターゲットは、ターゲットテーブル(2)によってこのリソグラフィシステムに運ばれ、
このリソグラフィシステムは、前記テーブル上に前記ターゲットをクランプするためのクランプ手段を具備し、
このクランプ手段は、前記ターゲットと前記ターゲットテーブルとの接触面(A,B)間で接触面(A,B)と接触した静止液体(3)の層を有し、
前記静止液体(3)の層は、前記ターゲットと前記ターゲットテーブルとの間の間隔が毛細管圧力降下(P cap )を生じさせるように、前記接触面(A,B)間に形成された毛細管に含まれ、
前記ターゲットテーブル(2)には、前記静止液体(3)の層の厚さを規定する複数のスペーサ(15)もしくは突起(7)が設けられているシステム。 - 前記ターゲットと前記ターゲットテーブルとの間の間隔は、0.1ないし10μmである請求項1のシステム。
- 前記スペーサ(15)もしくは突起(7)の高さは、前記ターゲットと前記ターゲットテーブルとの間の間隔に等しい請求項1又は2のシステム。
- 前記毛細管圧力降下は、前記静止液体(3)の層の蒸気圧よりも低い圧力(Pliq)をもたらす請求項1ないし3のいずれか1のシステム。
- このリソグラフィシステムは、真空で使用される請求項1ないし4のいずれか1のシステム。
- 前記静止液体(3)の層の厚さは、静止液体(3)の蒸気の気泡の臨界半径よりも小さい請求項1ないし5のいずれか1のシステム。
- 前記ターゲットと前記ターゲットテーブルとの間にもうけられ、前記静止液体(3)の層の周囲をシールする周縁シーリング手段を更に具備する請求項1ないし6のいずれか1のシステム。
- 前記周縁シーリング手段は、前記ターゲットテーブル(8)と前記ターゲットとの間に配置された蒸気制限リング(9A)を有し、
この蒸気制限リング(9A)は、前記静止液体(3)の層の周囲を隙間を残して囲んでいる請求項7のシステム。 - 前記蒸気制限リング(9A)は、この蒸気制限リングと前記ターゲット(1)との間の周端に沿って延びたギャップ(9B)を残すように配置され、また、
前記ターゲットテーブルには、流体を収容する溝が設けられており、
この溝は、前記ギャップ(9B)の高さより大きな幅を有し、前記蒸気制限リング(9A)によって規定された周縁内で、前記ターゲットテーブルのターゲット支持部分の周縁に位置されている請求項8のシステム。 - 前記ターゲットテーブルには、閉じることが可能な複数の放出開口が設けられている請求項1ないし9のいずれか1のシステム。
- 前記複数の放出開口は、前記ターゲットテーブルの溝が付けられた周縁に形成されている請求項10のシステム。
- 前記クランプのための液体は、水からなる請求項1ないし11のいずれか1のシステム。
- 前記ターゲットと前記ターゲットテーブルとの間への前記液体の供給は、前記ターゲットテーブル及びターゲットのうちの一方の接触面上に液体を広げるアプリケーションによってなされる請求項1ないし12のいずれか1のシステム。
- 前記ターゲットとターゲットテーブルとの接触面の少なくとも一方は、前記接触面のベースとは異なる材料でコーティングされている請求項1ないし13のいずれか1のシステム。
- 前記ターゲットテーブルは、このターゲットテーブルによって運搬されるターゲットを処理するためのリソグラフィ装置内の複数の導管の接続なしで形成されている請求項1ないし14のいずれか1のシステム。
- 前記ターゲットと液体の層とは、円形であり、
前記液体の体積は、ターゲットの半径が、前記液体を含んだ毛細管の半径に等しい請求項1ないし15のいずれか1のシステム。 - 真空環境内にターゲットを挿入するためのターゲットテーブルであって、ターゲットを前記ターゲットテーブルにクランプさせるためのクランプ手段を具備し、
このクランプ手段は、前記ターゲットと前記ターゲットテーブルとの接触面(A,B)間で接触面(A,B)と接触した静止液体(3)の層を有し、
前記静止液体(3)の層は、前記ターゲットと前記ターゲットテーブルとの間の間隔が毛細管圧力降下(P cap )を生じさせるように、前記接触面(A,B)間に形成された毛細管に含まれ、
前記ターゲットテーブル(2)には、前記静止液体(3)の層の厚さを規定する複数のスペーサ(7、15)が設けられているテーブル。 - 前記クランプ手段は、前記ターゲットテーブルによって運搬されるターゲットを処理するために、リソグラフィ装置の真空コンパートメント内にこのターゲットテーブルを挿入する前に、リソグラフィ装置の真空コンパートメントの外でクランプを実現するように設けられている請求項17のテーブル。
- ターゲット(1)にイメージ又はイメージパターンを投影するためのリソグラフィシステム内ターゲットをターゲットテーブルにクランプする方法であって、
前記ターゲットは、ターゲットテーブル(2)によってこのシステムに運ばれ、
このリソグラフィシステムは、前記テーブル上に前記ターゲットをクランプするためのクランプ手段を具備し、
このクランプ手段は、前記ターゲットと前記ターゲットテーブルとの接触面(A,B)間で接触面(A,B)と接触した静止液体(3)の層を有し、
前記静止液体(3)の層は、前記ターゲットと前記ターゲットテーブルとの間の間隔が毛細管圧力降下(P cap )を生じさせるように、前記接触面(A,B)間に形成された毛細管に含まれ、
前記ターゲットテーブル(2)には、前記静止液体(3)の層の厚さを規定する複数のスペーサ(15)もしくは突起(7)が設けられている方法。 - 前記リソグラフィシステムは、真空で動作される請求項19の方法。
- 前記ターゲットテーブルは、このターゲットテーブル上のターゲットを交換するためにリソグラフィシステムから取り出される請求項19又は20の方法。
- 前記ターゲットテーブルは、リソグラフィ装置のターゲットを交換する目的のために、互いに交換される請求項19ないし21のいずれか1の方法。
- 前記ターゲットテーブルは、リソグラフィ装置の外側で処理され、この処理においてリソグラフィ装置の温度が調節される請求項19ないし22のいずれか1の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US95953107P | 2007-07-13 | 2007-07-13 | |
US60/959,531 | 2007-07-13 | ||
NL1034131 | 2007-07-13 | ||
NL1034131 | 2007-07-13 | ||
PCT/NL2008/050469 WO2009011574A1 (en) | 2007-07-13 | 2008-07-11 | Lithography system, method of clamping and wafer table |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2013193589A Division JP5866323B2 (ja) | 2007-07-13 | 2013-09-18 | リソグラフィシステム、クランプ方法及びウェーハテーブル |
JP2013193588A Division JP5766758B2 (ja) | 2007-07-13 | 2013-09-18 | リソグラフィシステム、クランプ方法及びウェーハテーブル |
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JP2010533385A JP2010533385A (ja) | 2010-10-21 |
JP5372928B2 true JP5372928B2 (ja) | 2013-12-18 |
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JP2010516940A Active JP5372928B2 (ja) | 2007-07-13 | 2008-07-11 | リソグラフィシステム、クランプ方法及びウェーハテーブル |
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US (1) | USRE49488E1 (ja) |
EP (3) | EP2660655B1 (ja) |
JP (1) | JP5372928B2 (ja) |
KR (3) | KR101486399B1 (ja) |
CN (3) | CN101884016B (ja) |
TW (3) | TWI450047B (ja) |
WO (1) | WO2009011574A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9645511B2 (en) | 2007-07-13 | 2017-05-09 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
USRE49488E1 (en) | 2007-07-13 | 2023-04-11 | Asml Netherlands B.V. | Lithography system, method of clamping and wafer table |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5866323B2 (ja) * | 2007-07-13 | 2016-02-17 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフィシステム、クランプ方法及びウェーハテーブル |
GB2469114A (en) * | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Clamp preparation unit, unclamping unit, arrangement, method for clamping a substrate, and a method of unclamping a substrate |
GB2469112A (en) | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Wafer support using controlled capillary liquid layer to hold and release wafer |
JP5670351B2 (ja) * | 2009-02-22 | 2015-02-18 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフィ機械装置のための準備ユニット |
TWI545682B (zh) | 2009-02-22 | 2016-08-11 | 瑪波微影Ip公司 | 基板支持結構,箝夾準備單元及微影系統 |
GB2469113A (en) * | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Substrate Support Structure and Method for maintaining a substrate clamped to a substrate support Structure |
CN102870383A (zh) * | 2010-02-19 | 2013-01-09 | 迈普尔平版印刷Ip有限公司 | 基板支撑结构、夹持准备单元、以及光刻系统 |
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Cited By (3)
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US9645511B2 (en) | 2007-07-13 | 2017-05-09 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
US9665013B2 (en) | 2007-07-13 | 2017-05-30 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
USRE49488E1 (en) | 2007-07-13 | 2023-04-11 | Asml Netherlands B.V. | Lithography system, method of clamping and wafer table |
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CN103456670A (zh) | 2013-12-18 |
CN103456670B (zh) | 2017-06-23 |
WO2009011574A1 (en) | 2009-01-22 |
KR20130112072A (ko) | 2013-10-11 |
CN101884016A (zh) | 2010-11-10 |
JP2010533385A (ja) | 2010-10-21 |
CN103456671B (zh) | 2016-12-28 |
TW200919105A (en) | 2009-05-01 |
EP2660655B1 (en) | 2020-04-01 |
TW201351068A (zh) | 2013-12-16 |
KR101476950B1 (ko) | 2014-12-24 |
CN101884016B (zh) | 2013-10-09 |
KR101496398B1 (ko) | 2015-02-27 |
KR20130112071A (ko) | 2013-10-11 |
CN103456671A (zh) | 2013-12-18 |
EP2662728B1 (en) | 2023-01-18 |
TWI541615B (zh) | 2016-07-11 |
EP2179327B1 (en) | 2016-06-01 |
TWI450047B (zh) | 2014-08-21 |
USRE49488E1 (en) | 2023-04-11 |
KR101486399B1 (ko) | 2015-01-28 |
EP2660655A1 (en) | 2013-11-06 |
KR20100057610A (ko) | 2010-05-31 |
TW201351069A (zh) | 2013-12-16 |
EP2662728A1 (en) | 2013-11-13 |
TWI514090B (zh) | 2015-12-21 |
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