US9420210B2 - Solid-state image sensor for capturing high-speed phenomena and drive method for the same - Google Patents

Solid-state image sensor for capturing high-speed phenomena and drive method for the same Download PDF

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Publication number
US9420210B2
US9420210B2 US12/996,969 US99696909A US9420210B2 US 9420210 B2 US9420210 B2 US 9420210B2 US 99696909 A US99696909 A US 99696909A US 9420210 B2 US9420210 B2 US 9420210B2
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pixel
memory section
reading memory
signals
burst
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US20110085066A1 (en
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Shigetoshi Sugawa
Yasushi Kondo
Hideki Tominaga
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Tohoku University NUC
Shimadzu Corp
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Tohoku University NUC
Shimadzu Corp
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Assigned to TOHOKU UNIVERSITY, SHIMADZU CORPORATION reassignment TOHOKU UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUGAWA, SHIGETOSHI, TOMINAGA, HIDEKI, KONDO, YASUSHI
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    • H04N5/378—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H04N5/37452—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H04N5/3575—
US12/996,969 2008-06-10 2009-06-10 Solid-state image sensor for capturing high-speed phenomena and drive method for the same Active 2030-05-22 US9420210B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008151162 2008-06-10
JP2008-151162 2008-06-10
PCT/JP2009/002605 WO2009150829A1 (ja) 2008-06-10 2009-06-10 固体撮像素子及びその駆動方法

Publications (2)

Publication Number Publication Date
US20110085066A1 US20110085066A1 (en) 2011-04-14
US9420210B2 true US9420210B2 (en) 2016-08-16

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US12/996,969 Active 2030-05-22 US9420210B2 (en) 2008-06-10 2009-06-10 Solid-state image sensor for capturing high-speed phenomena and drive method for the same

Country Status (7)

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US (1) US9420210B2 (ja)
EP (1) EP2299696B1 (ja)
JP (1) JP4978818B2 (ja)
KR (1) KR101152145B1 (ja)
CN (1) CN102057671B (ja)
TW (1) TWI458346B (ja)
WO (1) WO2009150829A1 (ja)

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KR101251744B1 (ko) 2011-04-13 2013-04-05 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
FR2976121A1 (fr) * 2011-05-31 2012-12-07 St Microelectronics Sa Dispositif d'imagerie matriciel comprenant au moins un ensemble de photosites a multiples temps d'integration.
WO2013005389A1 (ja) * 2011-07-01 2013-01-10 パナソニック株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US9001107B2 (en) * 2011-07-14 2015-04-07 SK Hynix Inc. Image pixel and image pixel control method
JP5959187B2 (ja) * 2011-12-02 2016-08-02 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
JP5448208B2 (ja) * 2011-12-13 2014-03-19 国立大学法人東北大学 固体撮像装置
JP5796509B2 (ja) * 2012-02-16 2015-10-21 株式会社島津製作所 フローサイトメータ
JP6218434B2 (ja) * 2013-05-24 2017-10-25 キヤノン株式会社 焦点検出センサ
GB2520722A (en) * 2013-11-29 2015-06-03 Stfc Science & Technology Hybrid pixel sensor array
US9386220B2 (en) 2013-12-06 2016-07-05 Raytheon Company Electro-optical (EO)/infrared (IR) staring focal planes with high rate region of interest processing and event driven forensic look-back capability
EP2890117B1 (en) * 2013-12-26 2020-11-18 IMEC vzw Improvements in or relating to imaging sensors
FR3027479B1 (fr) * 2014-10-21 2017-12-29 Commissariat Energie Atomique Pixel de capteur d'image ayant de multiples gains de noeud de detection
JP5897752B1 (ja) * 2015-05-14 2016-03-30 ブリルニクスジャパン株式会社 固体撮像装置およびその駆動方法、電子機器
US9762812B2 (en) * 2015-10-30 2017-09-12 Raytheon Company Dual-field-of-view optical system
WO2017101864A1 (zh) * 2015-12-18 2017-06-22 广东欧珀移动通信有限公司 图像传感器、控制方法和电子装置
CN114339036A (zh) * 2017-03-30 2022-04-12 株式会社尼康 摄像元件及摄像装置
WO2019065866A1 (ja) * 2017-09-29 2019-04-04 株式会社ニコン 撮像素子
JP6398021B1 (ja) * 2018-01-09 2018-09-26 株式会社フローディア 固体撮像装置及びカメラシステム
CN113614565B (zh) * 2019-03-29 2024-03-08 凸版印刷株式会社 固体摄像装置、摄像系统及摄像方法
JP7120180B2 (ja) * 2019-08-07 2022-08-17 トヨタ自動車株式会社 イメージセンサ

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JP2001345441A (ja) 2000-03-28 2001-12-14 Hideki Muto 高速撮像素子及び高速撮影装置
US20030038888A1 (en) * 2001-08-23 2003-02-27 Flynn David J. CCD image detector and method of operating the same
JP2004336108A (ja) 2003-04-30 2004-11-25 Shimadzu Corp 撮像装置
US20050206757A1 (en) * 2004-03-19 2005-09-22 Olympus Optical Company, Ltd. Image pickup device and image pickup apparatus
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JP2000165750A (ja) 1998-09-22 2000-06-16 Koji Eto 高速撮像素子
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JP2004336108A (ja) 2003-04-30 2004-11-25 Shimadzu Corp 撮像装置
US20050206757A1 (en) * 2004-03-19 2005-09-22 Olympus Optical Company, Ltd. Image pickup device and image pickup apparatus
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JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法
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Yasushi Kondo et al., "Development of "Hyper-Vision HPV-1" High Speed Video Camera", Shimadzu Review, Sep. 30, 2005, vol. 62, No. 1-2, pp. 79-86.

Also Published As

Publication number Publication date
US20110085066A1 (en) 2011-04-14
TWI458346B (zh) 2014-10-21
KR20110014689A (ko) 2011-02-11
EP2299696A4 (en) 2012-12-19
WO2009150829A1 (ja) 2009-12-17
JPWO2009150829A1 (ja) 2011-11-10
EP2299696A1 (en) 2011-03-23
KR101152145B1 (ko) 2012-06-15
CN102057671A (zh) 2011-05-11
EP2299696B1 (en) 2013-11-27
TW201004334A (en) 2010-01-16
CN102057671B (zh) 2013-03-13
JP4978818B2 (ja) 2012-07-18

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