US9112175B2 - Organic component - Google Patents

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US9112175B2
US9112175B2 US12/158,482 US15848206A US9112175B2 US 9112175 B2 US9112175 B2 US 9112175B2 US 15848206 A US15848206 A US 15848206A US 9112175 B2 US9112175 B2 US 9112175B2
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organic component
component according
organic
molecular material
layers
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US20090009071A1 (en
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Sven Murano
Jan Birnstock
Ansgar Werner
Martin Vehse
Michael Hofmann
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NovaLED GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H01L51/5052—
    • H01L51/5088—
    • H01L51/5092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the invention relates to an organic component having an electrode and a counter electrode and also an arrangement of organic layers which is arranged between the electrode and the counterelectrode and which is in electrical contact with the electrode and the counterelectrode, the arrangement of organic layers comprising charge carrier transport layers for transporting charge carriers injected from the electrode and from the counterelectrode into the arrangement of organic layers.
  • Such components are known in various embodiments, in particular as light-emitting organic components.
  • One type of light-emitting organic component is organic light-emitting diodes (OLEDs). Since the demonstration of low operating voltages by Tang et al. (cf. C. W. Tang et al., Appl. Phys. Lett. 51 (12), 913 (1987)), organic light-emitting diodes have been promising candidates for producing new lighting and display elements. All of these components comprise a sequence of thin layers of organic materials, which are preferably applied in vacuo by vapour deposition or processed in their polymeric or oligomeric form in solution.
  • light is generated by the injection of charge carriers, namely electrons from an electrode and holes from a counterelectrode or vice versa, into an arrangement of organic layers arranged therebetween, as a result of an externally applied voltage, the subsequent formation of excitons (electron/hole pairs) in an active zone and the recombination of these excitons in an emission zone to produce light, and said light is emitted from the light-emitting diode.
  • charge carriers namely electrons from an electrode and holes from a counterelectrode or vice versa
  • organic-based components over conventional inorganic-based components, for example semiconductors such as silicon or gallium arsenide, lies in the fact that it is possible to produce elements with a very large surface area, that is to say large display elements (display panels, screens).
  • the organic starting materials are relatively inexpensive compared to inorganic materials.
  • these materials can be applied to flexible substrates, which opens up a large number of new applications in the field of display and lighting technology.
  • U.S. Pat. No. 5,093,698 describes an organic light-emitting diode of the PIN type (PIN-OLED), which is an organic light-emitting diode with doped charge carrier transport layers.
  • PIN-OLED PIN type
  • n-doped and p-doped layers improve the injection of charge carriers and the transport of holes and electrons into the respectively doped layer.
  • the proposed structure consists of at least three layers comprising at least five materials.
  • the energy levels HOMO (“Highest Occupied Molecular Orbital”) and LUMO (“Lowest Unoccupied Molecular Orbital”) are preferably selected such that both types of charge carrier are “trapped” in the emission zone so as to ensure efficient recombination of electrons and holes.
  • the restriction of the charge carriers to the emission zone is achieved by suitably selecting the ionization potentials or electron affinities for the emission layer and/or the charge carrier transport layer, which will be discussed in more detail below.
  • the excitons formed in the recombination zone have at least an energy that corresponds to the wavelength of the light to be emitted.
  • the highest energies are required to produce blue light, which has a wavelength in the range from 400 to 475 nm.
  • it is advantageous to use as matrix materials for these layers preferably materials which are adapted in terms of their energy levels to the emission zone such that there is the highest possible energy difference between the level of the electrons in the electron transport layer and the level of the holes in the hole transport layer.
  • the mode of operation of light-emitting components does not differ from the mode of operation of components which emit electromagnetic radiation close to the visible spectral range, for example infrared or ultraviolet radiation.
  • the energy of the LUMO should be at most ⁇ 2.7 eV or less. This corresponds to a value of at most ⁇ 2.1 V vs. Fc/Fc + (vs. ferrocene/ferrocenium).
  • Standard materials which are used as materials for electron transport layers in OLEDs have such a LUMO, for example BPhen (LUMO ⁇ 2.33 eV) and Alq 3 (LUMO ⁇ 2.47 eV).
  • the HOMO is preferably ⁇ 4.8 eV or less, corresponding to 0 V vs. Fc/Fc + (vs. ferrocene/ferrocenium) or more.
  • the p-dopants and n-dopants must have certain reduction potentials/oxidation potentials in order to obtain an oxidation of the matrix of the hole transport layer so as to achieve p-doping and a reduction of the matrix of the electron transport layer so as to achieve n-doping.
  • UV photoelectron spectroscopy is the preferred method (cf. R. Schlaf et al., J. Phys. Chem. B 103, 2984 (1999)).
  • Ionization potentials are usually determined in the solid state. However, it is in principle also possible to determine the gas ionization potentials. However, the measured values obtained by means of the two different methods differ on account of interactions which occur in the solid.
  • One example of such an effect due to an interaction is the polarization energy of a hole which is produced as a result of photoionization (N. Sato et al., J. Chem. Soc. Faraday Trans. 2, 77, 1621 (1981)).
  • the ionization potential corresponds to the point at which photoemission begins on the flank of high kinetic energies, i.e. the weakest bound photoelectron.
  • IPES inverse photoelectron spectroscopy
  • Empirical formulae for converting the electrochemical voltage scale (oxidation potentials) into the physical (absolute) energy scale (ionization potentials) are known (cf. for example B. W. Andrade et al., Org. Electron. 6, 11 (2005); T. B. Tang, J. Appl. Phys. 59, 5 (1986); V. D. Parker, J. Amer. Chem. Soc. 96, 5656 (1974); L. L. Miller, J. Org. Chem. 37, 916 (1972); Y. Fu et al., J. Amer. Chem. Soc. 127, 7227 (2005)).
  • No correlation between reduction potential and electron affinity is known, since electron affinities can be measured only with difficulty.
  • ionization potential and electron affinity synonymously with the terms energy (or energy layer) of the HOMO and energy (or energy layer) of the LUMO (Koopman's theory). It should be noted here that the ionization potential/electron affinity are stated in such a way that larger values signify stronger binding of the released/attached electron to the respective molecule.
  • the energy scale of the molecular orbitals e.g. HOMO or LUMO
  • U.S. Pat. No. 5,093,698 discloses a component structure for an OLED which leads to a greatly improved charge carrier injection from the electrodes into the organic layers. This effect is based on considerable band bending of the energy levels in the organic layer at the interface to the electrodes (J. Blochwitz et al., Org. Electronics 2, 97 (2001)), as a result of which injection of charge carriers on the basis of a tunnel mechanism is possible.
  • the high conductivity of the doped layers also prevents the voltage drop which occurs there during operation of the OLED.
  • the injection barriers which may occur in OLEDs between the electrodes and the charge carrier transport layers are one of the main causes for an increase in the operating voltage compared to the thermodynamically justified minimum operating voltages. For this reason, many attempts have been made to reduce the injection barriers, for example by using cathode materials with a low work function, for example metals such as calcium, magnesium or barium. However, these materials are highly reactive, difficult to process and are only suitable to a limited extent as electrode materials. Moreover, any reduction in operating voltage brought about by using such cathodes is only partial.
  • a further possibility for improving the injection of electrons from the cathode into the electron transport layer consists in using LiF or other lithium compounds which are incorporated as a thin layer between an aluminium cathode and the electron transport layer. It is assumed that lithium, which has a lower work function than aluminium, is formed in the process (M. Matsumura et al., Appl. Phys. Lett., 2872, (1998)). However, this method functions only when using aluminium as the cathode material. Moreover, precise control of the layer thickness for the LiF layer is necessary, since only very thin layers in the region of a few nanometers give rise to the desired effect. The method also does not function in a satisfactory manner for inverted structures, in which the cathode is deposited first, followed by the organic layer sequence.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the work function of ITO can be increased by means of targeted treatment of the ITO surface with oxygen plasma (M. Ishii et al., J. Lumin., 1165, (2000)).
  • the transport of the charge carriers is a possible source of an undesired voltage drop.
  • charge transport takes place according to the theory of space charge-limited currents (cf. M. A. Lampert, Rep. Progr. Phys. 27, 329 (1964)).
  • the voltage necessary to maintain a certain current density increases as the layer thickness increases and as the charge carrier mobility decreases.
  • Organic semiconductor materials these days have high charge carrier mobilities of more than 10 ⁇ 5 cm 2 /Vs, but these are often not sufficient to ensure a charge carrier transport that is largely free of voltage losses at increased current densities such as those necessary in the operation of OLEDs with high luminances.
  • a minimum layer thickness for the transport layer thicknesses must be adhered to, in order for example to avoid short-circuits between the electrodes and quenching of luminescence at the metal contacts.
  • the conductivities of the doped layer are up to five orders of magnitude or more higher than undoped layers.
  • the layer behaves like an ohmic conductor, as a result of which a voltage drop over the (doped) charge carrier transport layers is very low even when operating OLEDs with high current densities.
  • a conductivity of 10 ⁇ 5 S/cm for example, a voltage of 0.1 V drops over a doped organic charge carrier transport layer with a thickness of 100 nm at a current of 100 mA/cm 2 .
  • an undoped charge carrier transport layer space charge limitation of the current
  • a voltage of 5.4 V is required for this current density.
  • blocking layers were inserted between the central emission layer and at least one charge carrier transport layer.
  • the charge carrier transport layers are likewise doped with either acceptors or donors. It is described how the energy levels of the blocking materials must be selected in such a way as to restrict electrons and holes in the light-emitting zone, i.e. to prevent the charge carriers from leaving the emission zone by means of diffusion. Therefore, the known structure actually permits high efficiencies since the additional intermediate layers also act as a buffer zone for previously possible quenching effects at dopant impurity sites.
  • Cancellation of luminescence may be brought about by a number of effects.
  • One possible mechanism is known as exciplex formation.
  • exciplex state can be understood as a charge transfer exciton, with the molecules involved being of different nature.
  • this exciplex is the lowest possible excited state in terms of energy, so that the energy of the actually desired exciton can be transmitted to an emitter molecule in this exciplex state.
  • the use of intermediate layers at the interface between the transport layers and the emission zone can also fulfil the purpose of facilitating charge carrier injection into the emission zone.
  • OLEDs based on PIN technology achieve very high current efficiencies while simultaneously having very low operating voltages, as a result of which it is possible to achieve extremely high performance efficiencies of more than 100 lm/W (J. Birnstock et al., IDW, Proceedings, S. 1265-1268 (2004)), which have to date not been possible with alternative technologies.
  • doped charge carrier transport layers represents an additional technological obstacle in the production of an OLED.
  • the emission zone which is often constructed by the simultaneous evaporation of two or more materials in one or more layers
  • PIN OLEDs it is additionally necessary to produce the transport layers from two materials in each case.
  • two evaporation sources are required, which have to be heated and controlled separately, which is naturally associated with a more complicated and therefore more expensive design of the production installation.
  • Other methods for producing the OLED layers for example by growing the layers on from a carrier gas which is loaded with the OLED materials, are also more complicated with regard to simultaneous deposition.
  • the evaporation temperatures of the materials to be deposited are advantageously as close to one another as possible, so as to prevent the possible deposition of the less volatile substance at cooler parts in the production installation.
  • the evaporation temperatures are too far apart, and thus the parts of the installation which come into contact with the gas stream have to be brought to suitably high temperatures so as to prevent such a deposition, there is a risk of chemical decomposition of the more volatile component at the hot vessel walls.
  • a reaction between the transport matrix and the dopant may occur already in the gas phase.
  • Document WO 2005/086251 deals with the use of a metal complex as n-dopant for an organic semiconductive matrix material, an organic semiconductor material and an electronic component and also as dopant and ligand.
  • OLEDs have in recent years obtained an increasing market share, with the price pressure naturally being high.
  • the increased technological manufacturing outlay in the production of PIN OLED components must be weighed up against the improved performance characteristic compared to conventional OLEDs, which means that under some circumstances the commercial success of PIN technology may be impaired.
  • the object of the invention is to provide an organic component with an improved charge carrier injection from the electrodes into an arrangement of organic layers between the electrodes.
  • an organic component in particular a light-emitting organic component, having an electrode ( 1 ; 2 ) and a counterelectrode ( 2 ; 1 ) and also an arrangement of organic layers ( 3 ) which is arranged between the electrode ( 1 ; 2 ) and the counterelectrode ( 2 ; 1 ) and which is in electrical contact with the electrode ( 1 ; 2 ) and the counterelectrode ( 2 ; 1 ), the arrangement of organic layers ( 3 ) comprising charge carrier transport layers ( 4 , 8 ) for transporting charge carriers injected from the electrode ( 1 ; 2 ) and from the counterelectrode ( 2 ; 1 ) into the arrangement of organic layers ( 3 ), wherein an injection layer ( 5 ; 9 ) made from a molecular doping material is formed in the arrangement of organic layers ( 3 ) between the electrode ( 1 ; 2 ) and a charge carrier transport layer ( 4 ; 8 ) arranged opposite to the electrode ( 1 ; 2 ),
  • the molecular doping material has a reduction potential which, with respect to Fc/Fc + , is greater than or equal to approximately 0 V, if the doping material is of the p-type.
  • the molecular doping material has an oxidation potential, which, with respect to Fc/Fc + , is less than or equal to approximately ⁇ 1.5 V, if the molecular doping material is of the n-type.
  • the charge carrier transport layer arranged opposite to the anode is a hole transport layer and the injection layer is made from a molecular doping material of the p-type. If the electrode is formed as a cathode, the charge carrier transport layer arranged opposite to the cathode is an electron transport layer and the injection layer is made from a molecular doping material of the n-type.
  • the operating voltage during operation of the organic component can be significantly reduced by means of one or more injection layers made from molecular doping materials, as used for example in PIN OLEDs for doping charge carrier transport layers, between the electrodes and the charge carrier transport layers.
  • the invention has made it possible to lower the application voltage to a minimum value, as has until now been possible in the case of organic light-emitting components only for OLEDs of the PIN type.
  • the molecular doping materials are molecular substances which can be deposited by means of vacuum evaporation and without any decomposition to form layers. These are organic or inorganic substances, the molecules of which comprise at least six atoms, preferably more than twenty atoms.
  • the molecular doping material may also be a molecular salt, in which at least two molecular sub-units are formed, the atoms in the molecular sub-units once again comprising at least six atoms, preferably more than twenty atoms.
  • the molecular doping material may be a molecular charge transfer complex, the atoms of which satisfy the aforementioned conditions.
  • the molecular doping materials have a molecular weight of at least 300 g/mol.
  • the electrode is formed as an anode
  • the counterelectrode is a cathode
  • a further injection layer made from a further molecular doping material of the n-type is formed in the arrangement of organic layers between the cathode and an electron transport layer arranged opposite to the cathode, which further injection layer is in contact with the electron transport layer arranged opposite to the cathode, the further molecular doping material of the n-type having a molecular weight of at least 300 g/mol.
  • the charge carrier transport layer arranged opposite to the electrode is a doped charge carrier transport layer.
  • the advantageous effects of the invention are combined with the positive properties of doped transport layers.
  • Such an arrangement leads to an improved UV stability and to a further improved injection of charge carriers, as a result of which the operating voltage may be further reduced.
  • the charge carrier transport layer arranged opposite to the electrode is doped with the molecular doping material.
  • the charge carrier transport layer arranged opposite to the counterelectrode is a doped charge carrier transport layer.
  • the charge carrier transport layer arranged opposite to the electrode is doped with the further molecular doping material.
  • the injection layer is formed with a thickness of between approximately 0.1 nm and approximately 100 nm, preferably with a thickness of between approximately 0.5 nm and approximately 10 nm.
  • the further injection layer is formed with a thickness of between approximately 0.1 nm and approximately 100 nm, preferably with a thickness of between approximately 0.5 nm and approximately 10 nm.
  • the injection layer is in contact with the electrode.
  • a metal layer which is in contact with the electrode and the injection layer is formed between the electrode and the injection layer.
  • An injection of charge carriers also takes place from the metal intermediate layer into the charge carrier transport layers, so that an improvement in the injection properties is also achieved at this point.
  • the further injection layer is in contact with the counterelectrode.
  • a further metal layer which is in contact with the counterelectrode and the further injection layer is formed between the counterelectrode and the further injection layer.
  • one or a plurality of the organic layers in the arrangement of organic layers are deposited by means of vacuum evaporation. It may also be provided that one or a plurality of the organic layers in the arrangement of organic layers are formed as polymer layers.
  • the molecular doping materials that are used can be processed in a vacuum process.
  • One preferred embodiment of the invention provides that the molecular doping material and/or the further molecular doping material have a minimum evaporation temperature of at least 100° C., preferably of at least 140° C., more preferably of at least 160° C. This ensures that the doping material is not transported away into other functional layers of the component, which could result in negative effects on the performance of the component.
  • the evaporation temperature and the vapour pressure of the doping materials are two critical parameters, which is why evaporation temperatures that are too low or vapour pressures that are too high at room temperature are a criterion for excluding otherwise suitable materials in a production process.
  • the molecular doping materials can be purified by means of evaporation, so that the doping material is used in a high degree of purity when producing the component.
  • the doping material is able to undergo sublimation at a temperature considerably below the thermal decomposition temperature of the doping material.
  • the difference between the evaporation temperature and the decomposition temperature is at least approximately 20° C., preferably at least approximately 40° C., more preferably at least approximately 60° C. This also ensures that, during production of the component, no decomposition of the doping material in the production installation and thus no soiling of the latter occurs.
  • one development of the invention provides that, for the molecular doping material and/or the further molecular doping material, a difference between the evaporation temperature and the decomposition temperature is at least 20° C., preferably at least approximately 40° C., more preferably at least approximately 60° C.
  • the molecular doping material of the p-type has a reduction potential which, with respect to Fc/Fc + , is greater than or equal to approximately 0.18 V, preferably greater than or equal to approximately 0.24 V.
  • the reduction potentials can be determined for example by means of cyclic voltammetry of the substances in a suitable solvent, for example acetonitrile. Detailed information concerning the carrying out of cyclic voltammetry and other methods for determining reduction potentials and the relationships between the reference electrode ferrocene/ferrocenium (Fc/Fc + ) and other reference electrodes can be found in A. J. Bard et al., “Electrochemical Methods: Fundamentals and Applications”, Wiley, 2nd edition 2000. The greater the reduction potential, the greater the range of materials that can be used as hole transport layer. As a result, it is possible to use inexpensive materials that are more stable (UV/temperature) and have a longer life.
  • the counter electrode is a cathode
  • the charge carrier transport layer arranged opposite to the cathode is an electron transport layer
  • the further injection layer is made from a molecular doping material of the n-type.
  • the molecular doping material of the n-type has an oxidation potential which, with respect to Fc/Fc + , is less than or equal to approximately ⁇ 2.0 V, preferably less than or equal to approximately ⁇ 2.2 V.
  • the invention brings about the described advantages particularly in connection with light-emitting organic components.
  • One preferred embodiment of the invention provides that the arrangement of organic layers comprises a light-emitting region, with the result that a light-emitting organic component is formed.
  • the light-emitting organic component is top emitting.
  • an alternative development of the invention provides that the light-emitting organic component is bottom-emitting. It may be provided that the light-emitting organic component is transparent. An inverted arrangement may also be provided.
  • FIG. 1 shows a schematic diagram of an organic component, in which an arrangement of organic layers is arranged between an anode and a cathode;
  • FIG. 2 shows a schematic diagram of a light-emitting organic component, in which the arrangement of organic layers comprising a light-emitting layer is arranged between the anode and the cathode;
  • FIG. 3 shows an illustration in graph form of the luminance as a function of the voltage for an organic light-emitting diode according to the invention and an organic PIN light-emitting diode according to the prior art
  • FIG. 4 shows an illustration in graph form of the current density as a function of the voltage for an organic light-emitting diode according to the invention and the organic PIN light-emitting diode according to the prior art.
  • FIG. 1 shows a schematic diagram of an organic component, in which an arrangement of organic layers 3 is formed between an anode 1 and a cathode 2 .
  • An electrical voltage can be applied to the arrangement of organic layers 3 via the anode 1 and the cathode 2 .
  • Such a structure can be integrated in various organic components, for example diodes, light-emitting diodes, photodiodes or the like.
  • the arrangement of organic layers 3 comprises a hole transport layer 4 arranged opposite to the anode 1 .
  • holes which, when the electrical voltage is applied, are injected from the anode 1 via an anode-side injection layer 5 made from a molecular doping material of the p-type are transported to an active zone 6 .
  • the molecular doping material of the p-type use may be made for example of the following material: 2-(6-dicyanomethylene-1,3,4,5,7,8-hexafluoro-6H-naphthalen-2-ylidene)-malononitrile.
  • the active zone 6 is for example a light-emitting zone, in which the holes and electrons recombine and in doing so emit light.
  • the arrangement of organic layers 3 further comprises an electron transport layer 8 arranged opposite to the cathode 2 .
  • the electron transport layer 8 in the arrangement of organic layers 3 electrons which, when the electrical voltage is applied, are injected from the cathode 2 via a cathode-side injection layer 9 made from a molecular doping material of the n-type are transported to the active zone 6 .
  • the molecular doping material of the n-type use may be made for example of the following material: tetrakis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) ditungsten(II).
  • FIG. 2 shows a schematic diagram of a light-emitting organic component, in which the arrangement of organic layers 3 comprising the active zone 6 designed as a light-emitting layer is arranged between the anode 1 and the cathode 2 .
  • the organic components shown in FIGS. 1 and 2 may in other embodiments (not shown) comprise further layers in the arrangement of organic layers 3 or outside the arrangement of organic layers 3 .
  • embodiments are known in which intermediate layers which serve to block charge carriers are provided.
  • FIG. 3 shows an illustration in graph form of the luminance as a function of the voltage for an organic light-emitting diode according to the invention (OLED according to the invention; triangles) and an organic PIN light-emitting diode according to the prior art (PIN-OLED according to the prior art; squares).
  • FIG. 4 shows an illustration in graph form of the current density as a function of the voltage for the OLED according to the invention (triangles) and the PIN-OLED according to the prior art (squares).
  • the organic layers and the metal layers were deposited by means of thermal evaporation onto ITO-coated glass in an ultra-high-vacuum system at a pressure of approximately 10 ⁇ 7 mbar, without interrupting the vacuum during the production process.
  • the deposition rates and deposition thicknesses were monitored by means of crystal oscillators.
  • the OLED according to the invention has the following structure:
  • the sample reaches a brightness of 1000 cd/m 2 at a voltage of 3.1 V.
  • the current efficiency at this brightness is 24 cd/A.
  • the OLED reaches a brightness of 1000 cd/m 2 at a voltage of 2.7 V.
  • the current efficiency at this brightness is 26 cd/A.
  • the curve in FIG. 4 shows that, at low current densities, firstly an identical rise is achieved both for the OLED according to the invention and for the OLED according to the prior art. Only from a current density of 0.1 mA/cm 2 is there a difference in the curves. There is a slower rise in the curve for the OLED according to the invention. For a current density of 10 mA/cm 2 , a voltage that is 0.5 V lower is required for the OLED according to the prior art than for the OLED according to the invention.
  • the injection of charge carriers from the anode and from the cathode takes place without any barriers, so that no additional voltage drop occurs on account of a contact resistance.
  • the threshold voltage is only 2.0 V.
  • the energy of the photons emitted by the component is also only 2.0 eV. This also means that no contact resistances occur in the OLED according to the invention and the OLED according to the prior art.
  • Injection layers made from materials with a high reduction potential of 0.6 V to 0 V as hole injection layer (cf. US 2004/0113547 A1) and with a low oxidation potential of 1.28 V to 1.44 V, measured by cyclic voltammetry against a standard hydrogen electrode (Bloom et al., J. Phys. Chem., 2933, (2003)), as injection layer for electrons are known.
  • hole injection layer cf. US 2004/0113547 A1
  • a low oxidation potential of 1.28 V to 1.44 V measured by cyclic voltammetry against a standard hydrogen electrode
  • injection layer for electrons are known.
  • special anode materials with a low work function are required in order to achieve low operating voltages.
  • the threshold voltages achieved are higher compared to the present invention, and the curves have a flatter profile.
  • the known materials with a low oxidation potential cf. Bloom et al., J. Phys. Chem., 2933, (2003)
  • the difference in operating voltages between the OLED according to the invention and the OLED according to the prior art is small.
  • brightnesses of 1000 cd/m 2 and less are entirely sufficient. Therefore, particularly for possible applications with low to medium component brightnesses, the invention represents a very good alternative to PIN technology.
  • the invention it is possible to prevent it from being necessary to carry out the simultaneous evaporation of doped charge carrier transport layers in order to achieve low operating voltages.

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  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
US12/158,482 2005-12-21 2006-12-21 Organic component Active 2028-11-05 US9112175B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP05028081 2005-12-21
EP05028081.7 2005-12-21
EP05028081A EP1806795B1 (fr) 2005-12-21 2005-12-21 Dispositif organique
PCT/EP2006/012403 WO2007076960A1 (fr) 2005-12-21 2006-12-21 Composant organique

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