US7027939B2 - Method and circuit for detecting a fault of semiconductor circuit elements and use thereof in electronic regulators of braking force and of dynamics movement of vehicles - Google Patents

Method and circuit for detecting a fault of semiconductor circuit elements and use thereof in electronic regulators of braking force and of dynamics movement of vehicles Download PDF

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US7027939B2
US7027939B2 US10/494,873 US49487304A US7027939B2 US 7027939 B2 US7027939 B2 US 7027939B2 US 49487304 A US49487304 A US 49487304A US 7027939 B2 US7027939 B2 US 7027939B2
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current
semiconductor circuit
load
circuit
contacts
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Expired - Fee Related
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US10/494,873
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US20040260501A1 (en
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Wolfgang Fey
Mario Engelmann
Peter Oehler
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Continental Teves AG and Co OHG
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Continental Teves AG and Co OHG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T8/00—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force
    • B60T8/32—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force responsive to a speed condition, e.g. acceleration or deceleration
    • B60T8/88—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force responsive to a speed condition, e.g. acceleration or deceleration with failure responsive means, i.e. means for detecting and indicating faulty operation of the speed responsive control means
    • B60T8/885—Arrangements for adjusting wheel-braking force to meet varying vehicular or ground-surface conditions, e.g. limiting or varying distribution of braking force responsive to a speed condition, e.g. acceleration or deceleration with failure responsive means, i.e. means for detecting and indicating faulty operation of the speed responsive control means using electrical circuitry
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W50/00—Details of control systems for road vehicle drive control not related to the control of a particular sub-unit, e.g. process diagnostic or vehicle driver interfaces
    • B60W50/02—Ensuring safety in case of control system failures, e.g. by diagnosing, circumventing or fixing failures
    • B60W50/029—Adapting to failures or work around with other constraints, e.g. circumvention by avoiding use of failed parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T2270/00—Further aspects of brake control systems not otherwise provided for
    • B60T2270/40—Failsafe aspects of brake control systems
    • B60T2270/406—Test-mode; Self-diagnosis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W50/00—Details of control systems for road vehicle drive control not related to the control of a particular sub-unit, e.g. process diagnostic or vehicle driver interfaces
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Definitions

  • the present invention relates to a method of detecting a defect of semiconductor circuit elements, in particular of field effect semiconductor circuit elements, a circuit configuration, and an electronic controller with such a circuit configuration.
  • Electronic control devices for motor vehicle brake systems perform functions at an increasing rate that either contribute to driving safety or lately even comprise basic vehicle functions such as the braking function itself.
  • functions for improving driving safety are anti-lock control (ABS) or driving dynamics control (ESP: Electronic Stability Program).
  • ABS anti-lock control
  • ESP driving dynamics control
  • the braking function as such is carried out by the electronic control unit of the brake in more recent electronic brake systems, such as the ElectroHydraulic Brake (EHB) or the ElectroMechanical Brake (EMB). Therefore, ever increasing demands are placed on the reliability, failure tolerance and error handling of the electronic control units.
  • EHB ElectroHydraulic Brake
  • EMB ElectroMechanical Brake
  • Safety-relevant circuit parts may have a double or multiple (redundant) design to identify defects. Errors arising can be detected in many cases by comparing the functioning of the multiply provided circuit parts.
  • Semiconductor circuit elements such as power field effect transistors (power MOSFET's, FET's) are employed among others for actuating the electromechanical hydraulic valves provided to control the brake pressure.
  • power MOSFET's power field effect transistors
  • FET's field effect transistors
  • the method of the invention being implemented in an electronic control unit, in particular for brake or driving dynamics controllers, permits detecting a fault of electronic components, such as FET's, which are associated with at least one power driver stage and at least one recirculation driver stage.
  • the power driver stage and the recirculation driver stage preferably comprise electronic components such as, especially, one or more semiconductor circuit elements and/or one or more current measuring devices.
  • one power driver stage is respectively connected to a load, said load especially being an inductive load, e.g. a valve coil.
  • sense semiconductor circuit elements are preferably Sense FET's.
  • Redundant current measurement relates to the testing of the current in a redundant circuit arrangement with at least two current measuring devices, and said current measuring devices can be arranged in parallel or in series to one another.
  • the measurement of the current at the output of a semiconductor circuit element for example, the measurement of the drain-source current in a FET, it can also be expedient for monitoring the proper functioning of this semiconductor to determine the current between the control line of the semiconductor circuit element and one of the outputs, e.g. the gate-source current.
  • the control line of the semiconductor circuit elements is driven jointly by one signal input with these semiconductor circuit elements that drive a common output.
  • these semiconductor circuit elements drive induction currents of inductive loads connected to the output, this also signifies an actuation of one output with several semiconductor circuit elements.
  • the invention also relates to a circuit comprising one or more semiconductor circuit elements each with control contacts for connecting a control line, with current contacts for connecting preferably inductive loads (e.g. valve coils) and a current measuring device for determining the current (I L or I LS ) conducted through the semiconductor circuit element, in particular for implementing the method of the invention as described hereinabove, wherein at least two separate current measuring devices are provided, optionally with one or more joint components (R s *), in particular, elements of a resistor, for a redundant current measurement.
  • inductive loads e.g. valve coils
  • R s * joint components
  • resistor elements When integrated on a substrate, resistor elements can be on-chip resistors or, preferably, discrete resistor elements, and it is possible to manufacture the last mentioned resistor elements with lower tolerances compared to on-chip resistors.
  • the invention also relates to electronic brake force or driving dynamics controllers for motor vehicles which include a circuit as described above.
  • FIG. 1 is a circuit with a Sense FET for driving a load, equipped with a current measuring device.
  • FIG. 2 is a circuit for driving a load with a redundant current measuring device.
  • FIG. 3 is a circuit with parallel connected Sense FET's with respectively one current measuring device.
  • FIG. 4 is a circuit for driving several loads, equipped with current measuring devices and an external reference resistor.
  • FIG. 5 is a circuit with a recirculation driver.
  • FIG. 6 is a diagram with current and signal courses of the circuit for explaining the circuit according to FIG. 5 .
  • a Sense FET 1 is connected to terminal 15 leading to a load 3 (e.g. valve coil).
  • a current I L flows through load 3 according to the gate voltage at gate G.
  • the second connection of the load (terminal 26 ) is connected to the positive potential V REF with a voltage relative to the reference potential V REF .
  • the additional sense output of a Sense FET 1 in which the considerably lower sense current I S flows can be used to measure the output current.
  • the sense output is conducted through resistor R S to the reference potential.
  • a Sense FET can e.g. be seen in U.S. Pat. No. 5,079,456 or patent application DE 195 20 735 A1. Accordingly, the load current of a power FET 18 can be sensed in that connected in parallel and in direct vicinity to the power FET 18 on the semiconductor material is a similar FET 8 having a smaller surface. Current I s that flows through the smaller FET is largely proportional to the load current of the power FET, however, current I s is lower than the load current by a structurally defined numerical ratio, corresponding substantially to the ratio of chip surface used between power FET and Sense FET.
  • FIG. 2 A Sense FET is illustrated in FIG. 2 , which comprises two redundant Sense FET regions 8 in contrast to the Sense FET in FIG. 1 . Both Sense FET regions are respectively carried through an own measuring resistor 4 (R s ) to the reference potential so that redundant current measurement can be performed.
  • the voltage U s that is proportional to the load current can be tapped between terminals 5 and 6 and between terminals 27 and 6 .
  • the circuit illustrated herein is limited to the detection of errors of the measuring resistor 4 or faults of the Sense FET, which also extend to the Sense FET region of the semiconductor, i.e. in the event of complete melt of the component.
  • the circuit in FIG. 3 wherein all essential components are grouped on a semiconductor substrate 9 , comprises two parallel connected Sense FET's 1 and 1 ′ for driving a load 3 .
  • the dotted frame 17 emphasizes that Sense FET's 1 and 1 ′ can be seen as a common driver stage.
  • substrate 9 comprises two current measuring devices 7 made up of reference resistors 4 and signal amplifiers 7 allowing the measurement of the respective voltages that drop across resistors 4 .
  • the measured voltages can then be carried through outputs ADC 1 and ADC 2 to one or more A/D converters 38 .
  • Terminal 15 of the circuit is connected as a low-side actuator to load 3 .
  • Terminal 15 leads on the substrate to the drain zones D of the Sense FET's 1 and 1 ′.
  • Gates G of the Sense FET's are led jointly through control lines 16 to terminal 19 , through which a control signal can be supplied by a logic (not shown).
  • Discrete resistor elements R S , R S are respectively coupled to the Sense FET regions of the circuit elements 1 and 1 ′ for generating a voltage proportional to the current.
  • the voltage declining across resistors R s can finally be tapped by means of amplifier stages 7 .
  • Sense FET's 1 and 1 ′ in FIG. 3 are favorably not arranged directly side by side on the semiconductor substrate so that a defect of one semiconductor element and the local heat developing due to said defect will not cause any defect of the other semiconductor element.
  • the circuit in FIG. 4 shows an embodiment with several drivers 24 for driving respectively one of the loads 3 , 3 ′ associated with the driver.
  • the loads are driven by means of Sense FET's, however, herein a presentation of the Sense FET's 1 and 1 ′ is used which is broken down and differs from FIG. 3 for reasons of clarity, as will be explained hereinbelow.
  • the sense current section 8 of the Sense FET 1 is illustrated as an independent FET symbol.
  • the load current section 18 of the power FET 1 is also characterized as a separate FET symbol.
  • current measurement is executed by using an external discrete measuring resistor 4 allowing to connect the sense sections 8 of the n-fold provided (n>1) Sense FET's 1 , 1 ′ to terminal 10 (Select) by way of a signal in a selectable manner.
  • gate 20 of the power FET 18 is coupled to gate 21 of the sense current section 8 of the Sense FET 1 by way of an additional FET 12 (pass transistor).
  • driving port 22 Drive 1
  • the gate of FET 12 leads to selecting port 10 (Select 1 ) and through inverter 11 to the gate of FET 13 .
  • the source-port of FET 13 is connected to the reference potential.
  • the drain-port of FET 13 is coupled to the gate of the sense current section 8 .
  • the drain-ports of the load current section 18 and of the sense current section 8 are jointly conducted to terminal 15 .
  • Source-port 23 is connected to reference resistor 4 by way of terminal 28 .
  • Terminal 28 leads to amplifier 7 providing a signal at output ADC of the circuit that can be processed further.
  • the signal at output ADC is then proportional to the respectively selected coil current in the event of proper functioning of the circuit.
  • Terminal ADC is connected to an A/D converter that provides a digital signal to a digital monitoring circuit 39 having select outputs by means of which the Sense FET's in the driver stages can be selected.
  • the signal carried through output ADC indicates the current by means of that coil that is selected by a high-level at terminal 10 , while a low-level must be applied at that time to the other terminals of the remaining assemblies 24 .
  • the selection of the driver stage 40 by means of a ‘high’-level at terminal 10 causes opening of FET 13 and closing of FET 12 . This activates the sense current section of FET 1 so that sense current Is flows through resistor 4 . With a ‘low’-level at terminal 10 , the sense current section 8 will be deactivated so that current measurement can be executed by a ‘high’-level at terminal 10 at one of the remaining assemblies 22 .
  • the Sense FET 1 in one single driver stage can also be replaced by two parallel connected Sense FET's 1 and 1 ′ corresponding to the embodiment in FIG. 3 or by a ‘series connection’ like in FIG. 5 for the purpose of enhancing the redundancy.
  • the resistor elements 4 can also be designed redundantly in the way of several discrete components arranged outside the substrate.
  • FIG. 5 schematically indicates a circuit for driving an inductive load 3 , wherein besides a driver stage 25 for driving the load 3 , there is additional provision of a recirculation driver stage 29 .
  • the circuit described herein is advantageous in comparison to the circuit of FIG. 3 because faults of the power section in the Sense FET can additionally be detected, which e.g. have a gradual or abrupt change in the switching resistance R DSon as a result. In addition, a fault in the Sense FET of the recirculation stage can be detected accordingly.
  • the mode of operation of the circuit is explained by way of FIG. 6 .
  • the driver stage 25 By driving the driver stage 25 by means of a square-wave signal 33 at terminal 19 , the induction current I L (freewheeling current) prevailing in the pulse pause due to the coil inductance can be fed back into the coil by way of the recirculation stage 29 .
  • the recirculation stage 29 is driven by a signal 34 that is complementary to signal 33 at terminal 30 .
  • Driver stage 25 and recirculation stage 29 may expediently comprise one or more FET's.
  • Driving the driver 25 can take place corresponding to the circuit described hereinabove in FIG. 3 by way of a logic through terminal 19 , which is connected to the driving line of a semiconductor circuit element. A signal complementary to the signal applied to terminal 19 is sent through terminal 30 .
  • both driver stage 25 and recirculation stage 29 comprise each one of the previously described current measuring devices (e.g. one Sense FET in each stage).
  • PWM pulse width modulation
  • the circuit includes the advantage that semiconductor defects can additionally be detected, where a change of the switching resistance R DSon occurs. Under the assumption that a corresponding defect happens only in one of the existing semiconductor circuit elements (simple fault), a defect can be detected by a comparison of the current through the driver stage during the driving phase with the freewheeling current through the recirculation stage during the driving pause.
  • the circuit described hereinabove allows detecting deviations between driving current and freewheeling current. Deviations can develop when the measured current in the driver stage or in the recirculation stage does not coincide with the actual coil current. In this case, a defect of one of the Sense FET's is likely, what causes e.g. deactivation of the anti-lock system.
  • the circuit according to FIG. 5 renders it possible to detect apart from semiconductor defects also shunts, represented by resistors 31 (R p2 ) and 32 (R p1 ), which occur due to a defect either in parallel to the driver stage or in parallel to the recirculation stage.
  • the result due to the parallel connection R DSon and R P1 is that I Sense1 also comprises the current I Leak1 . Assuming that a voltage of e.g. 1 volt maximally can drop across driver 25 , I Leak1 ⁇ 1 V/R p1 will result.
  • a too low current Isense 2 is measured by the parallel connection of the switch-on resistor R DSon in the transistor of the recirculation driver and the resistor R p2 . Consequently, the result is a current difference between I sense1 and I sense2 , which can be detected by the circuit.
  • a monitoring circuit with a comparator 35 is additionally provided in the circuit according to FIG. 5 , which comparator monitors terminal 15 ′ (coil output) as to whether the voltage potential falls below a predetermined value. Even this case of fault which has not been identifiable so far, can be detected by the circuit by additionally monitoring the signal at terminal 36 alternating from ‘high’ to ‘low’ when the mentioned short-circuit occurs.

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  • Engineering & Computer Science (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Human Computer Interaction (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Electronic Switches (AREA)
US10/494,873 2001-11-09 2002-10-24 Method and circuit for detecting a fault of semiconductor circuit elements and use thereof in electronic regulators of braking force and of dynamics movement of vehicles Expired - Fee Related US7027939B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10154763.3 2001-11-09
DE10154763A DE10154763A1 (de) 2001-11-09 2001-11-09 Verfahren und Schaltungsanordnung zur Erkennung eines Defekts von Halbleiterschaltelementen und deren Verwendung in elektronischen Bremskraft- und Fahrdynamikreglern
PCT/EP2002/011886 WO2003039904A2 (de) 2001-11-09 2002-10-24 Verfahren und schaltungsanordnung zur erkennung eines defekts von halbleiterschaltelementen und deren verwendung in elektronischen bremskraft- und fahrdynamikreglern

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US20040260501A1 US20040260501A1 (en) 2004-12-23
US7027939B2 true US7027939B2 (en) 2006-04-11

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US (1) US7027939B2 (de)
EP (1) EP1442309B1 (de)
JP (1) JP2005508009A (de)
DE (2) DE10154763A1 (de)
WO (1) WO2003039904A2 (de)

Cited By (7)

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US20060091722A1 (en) * 2004-10-28 2006-05-04 Takashi Watanabe Brake apparatus with initial check function for actuator
US20070262656A1 (en) * 2006-05-12 2007-11-15 Fulks Gary C Control module
US20090299592A1 (en) * 2006-01-10 2009-12-03 Continental Teves Ag & Co. Ohg Method and Electronic Regulator With A Current Measuring Circuit For Measuring The Current by Sense-Fet and Sigma-Delta Modulation
US20100204879A1 (en) * 2009-02-12 2010-08-12 Katrak Kerfegar K Transmission control module
US20110057645A1 (en) * 2006-05-17 2011-03-10 Jaeger Markus Method and Pulse-Width-Modulated Current Control Circuit For Driving Inductive Loads in Motor Vehicles
US10809300B2 (en) 2016-11-04 2020-10-20 Continental Teves Ag & Co. Ohg Method and arrangement for checking a control circuit of an inductive load
US20230221742A1 (en) * 2022-01-13 2023-07-13 Texas Instruments Incorporated Multi-segment fet gate enhancement detection

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GB0308674D0 (en) * 2003-04-15 2003-05-21 Koninkl Philips Electronics Nv Driver for inductive load
DE102006035564A1 (de) * 2005-10-21 2007-05-31 Continental Teves Ag & Co. Ohg Verfahren und pulsweitenmodulierte Stromregelschaltung zur Ansteuerung von induktiven Lasten in Kraftfahrzeugen
US7557592B2 (en) * 2006-06-06 2009-07-07 Formfactor, Inc. Method of expanding tester drive and measurement capability
DE102006056668A1 (de) † 2006-11-30 2008-06-05 Continental Teves Ag & Co. Ohg Verfahren zum Sicherstellen oder Aufrechterhalten der Funktion eines komplexen sicherheitskritischen Gesamtsystems
US8643068B2 (en) * 2009-03-12 2014-02-04 Infineon Technologies Ag Integrated circuit having field effect transistors and manufacturing method
DE102012204122B4 (de) 2011-05-03 2024-06-06 Continental Automotive Technologies GmbH Elektronische PWM-Ansteuerschaltung zur Ansteuerung von Lasten, insbesondere Magnetventilen, PWM-Ansteuerverfahren sowie deren bzw. dessen Verwendung
DE102012223285A1 (de) 2012-01-13 2013-07-18 Continental Teves Ag & Co. Ohg Schaltungsanordnung und Verfahren zur Überwachung einer PWM-Ansteuerelektronik eines Kraftfahrzeugsteuergeräts
US9673704B2 (en) * 2012-10-15 2017-06-06 Nxp Usa, Inc. Inductive load control circuit, a braking system for a vehicle and a method of measuring current in an inductive load control circuit
DE102013222392A1 (de) * 2013-11-05 2015-05-07 Robert Bosch Gmbh Batteriesystem mit redundanter Strommessung und Verfahren zur Übertragung von Strommessdaten
DE102014219468A1 (de) * 2014-09-25 2016-03-31 Siemens Aktiengesellschaft Schaltungsanordnung mit einem mindestens einen binären Eingang aufweisenden Steuergerät und zugehöriges Betriebsverfahren
DE102015212080B4 (de) * 2015-06-29 2017-06-14 Continental Automotive Gmbh Verfahren zum Ermitteln der Abweichungen der gemessenen Stromist- von Stromsollwerten in einer Anzahl parallel geschalteter, stromgeregelter Schaltpfade
US10281528B2 (en) 2016-01-04 2019-05-07 Infineon Technologies Ag Enhanced protection, diagnosis, and control of power distribution and control units
EP3226010A1 (de) 2016-03-30 2017-10-04 Siemens Aktiengesellschaft Anordnung mit mindestens zwei redundanten analogeingabeeinheiten für einen messstrom
IT202200009986A1 (it) * 2022-05-13 2023-11-13 St Microelectronics Srl Protezione per dispositivi elettronici switched

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EP1442309B1 (de) 2011-04-06
DE10154763A1 (de) 2003-05-22
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US20040260501A1 (en) 2004-12-23
WO2003039904A2 (de) 2003-05-15

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