US5366587A - Process for fabricating micromachines - Google Patents

Process for fabricating micromachines Download PDF

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US5366587A
US5366587A US07/887,749 US88774992A US5366587A US 5366587 A US5366587 A US 5366587A US 88774992 A US88774992 A US 88774992A US 5366587 A US5366587 A US 5366587A
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sub
layer
layers
set forth
sacrificial
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Minoru Ueda
Michitomo Iiyama
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority claimed from JP14946391A external-priority patent/JPH04348822A/ja
Priority claimed from JP14946191A external-priority patent/JPH04348820A/ja
Priority claimed from JP14946291A external-priority patent/JPH04348821A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD. reassignment SUMITOMO ELECTRIC INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: IIYAMA, MICHITOMO, UEDA, MINORU
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/034—Electrical rotating micromachines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/035—Microgears
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/037—Microtransmissions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/056—Rotation in a plane parallel to the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/785—Composition containing superconducting material and diverse nonsuperconducting material

Definitions

  • the present invention relates to an improvement in a process for fabricating "micromachines", more particularly to a novel ceramic material used in the process.
  • micromachine is an extremely small machine having dimensions or several tens micrometers to several hundreds micrometers and fabricated by such precise processing techniques that are used in the field of integrated circuits manufacturing or the like. Many studies have been made for fabricating the micromachines.
  • FIG. 1 comprises FIGS. 1A through 1J.
  • FIG. 1A to 1J are cross sectional views illustrating successive steps for fabricating a micromachine to which the present invention is applicable.
  • FIG. 2A and 2B are enlarged cross sectional views each corresponding to a circle I of FIG. 1C and a circle II of FIG. 1F
  • FIG. 1 illustrates successive steps of a known process for fabricating a microgear made of polycrystalline silicon rotatable-supported about a fixed shaft secured to a substrate.
  • a layer 2 of Si 3 N 4 is deposited firstly on a substrate 1 made of silicon single crystal (Si substrate) by low-pressure chemical vapour deposition (CVD) technique (FIG. 1A).
  • CVD chemical vapour deposition
  • the layer 2 of Si 3 N 4 is patterned (FIG. 1B) in such a manner that a first flange portion 2' is left.
  • This patterning operation can be effected by usual photo-lithography technique followed by partial removal of the Si 3 N 4 layer by means of reactive ion-etching (RIE).
  • RIE reactive ion-etching
  • a first sacrificial layer 3 made of phosphor silicate glass (PSG) is deposited by CVD technique (FIG. 1C).
  • a layer 4 made of polycrystalline silicon (Si layer) is deposited by low-pressure CVD technique (FIG. 1D).
  • a microgear (14) will be produced in this Si layer in the latter stage.
  • the Si layer 4 is then patterned in such a manner that a gear portion 4' having a central hole 41, a top surface 42 and an outer periphery 43 is left just above the first flange portion 2' and the PSG layer 3 is partly exposed (FIG. 1E).
  • This patterning operation can be carried out by usual photo-lithography technique followed by partial removal of the Si layer by means of RIE.
  • a second sacrificial layer 5 made of silicon nitride (SiN x layer) is deposited whole over exposed surfaces including the top surface 42 and surfaces of the central hole 41 and the outer periphery 43 of the gear portion 4' by plasma CVD technique (FIG. 1F).
  • the second sacrificial layer 5 is then patterned in such a manner that a top surface of the first flange 2' is exposed while all of the top surface 42, the central hole 41 and the outer periphery 43 of the gear 4' are covered or protected with the second sacrificial layer 5 (FIG. 1G).
  • This patterning can be effected by usual photo-lithography technique followed by partial removal of the second sacrificial layer 5 by means of RIE.
  • FIG. 1G shows also relative dimensions (a diameter d 1 of the central hole 41, a diameter d 2 to be drilled in the central hole 41, an outer diameter D 1 of a portion to be left of the first sacrificial layer 3 and an inner diameter D 2 of a hole to be drilled in the first and second sacrificial layers 3 and 5).
  • a layer 6 made of polycrystalline silicon (Si layer) is deposited thereon by low-pressure CVD (FIG. 1H). From this Si layer 6, a shaft (16) will be produced in the later stage.
  • the polycrystalline silicon layer 6 is patterned in such a manner that a shaft portion 6' and a second flange portion 6" are left in the central hole 41 (FIG. 1I).
  • This patterning can be effected by usual photo-lithography technique followed by partial removal of the Si layer 6 by means of RIE.
  • FIG. 1I shows also a dimension of the second flange portion 6" (d 3 >d 2 ).
  • first sacrificial layer (PSG) 3 and the second sacrificial layer (SiN x ) 5 are etched with aqueous solution of hydrogen fluoride (HF) (FIG. 1J).
  • HF hydrogen fluoride
  • a merit of this process resides in that planarity of the microgear can be assured by using the sacrificial layers.
  • each of the sacrificial layer 3 and 5 must have a smooth flat surface.
  • the flatness is required especially in such a case that another machine element is fabricated on the sacrificial layers.
  • the sacrificial layers 3, 5 must have adequate adhesive property to an under-layer and good processability.
  • the sacrificial layers 3 and 5 are made of phosphor silicate glass (PSG) and silicon nitride (SiN x ) respectively.
  • micromachine fabricated is critically influenced by the property of the sacrificial layers.
  • improved sacrificial layers are required in order to produce micromachines of high performance.
  • An object of the present invention is to provide a novel material for the sacrificial layers which are suitable for fabricating micromachines.
  • the present invention provides a process for fabricating a micromachine comprising a substrate and at least one movable machine element supported moveably relative to the substrate, by depositing machine parts layers and removable sacrificial layers successively in a predetermined order on the substrate and removing the machine parts layers and removable sacrificial layers selectively so as to leave the machine element, characterized in that at least one of the sacrificial layers is made of an oxide ceramic material containing rare earth, Ba and Cu.
  • compositions of the oxide ceramic material containing rare earth, Ba and Cu of Re-Ba-Cu-O (in which Re stands for rare earth elements such as Y, Dy and Ho) used in the present invention can be selected in a wide range and depend on fabrication methods used and applications or uses.
  • Re stands for rare earth elements such as Y, Dy and Ho
  • the oxide ceramic material according to the present invention there is no special limitation in proportions among rare earth, Ba, Cu and O and in the crystal structure.
  • the oxide ceramic material can be made of an oxide represented by the general formula:
  • Re stands for rare earth elements and x is a number of ⁇ 1.
  • the ceramic material of Re-Ba-Cu-O used in the present invention is soluble in acid of low concentration, so that the sacrificial layers deposited on a silicon substrate can be removed selectively and easily.
  • the oxide ceramic material alone can be removed or etched selectively at a rule of 1 ⁇ m/min with aqueous solution of hydrogen chloride (concentration of 1/1000) without spoiling dimensional precision of the resulting machine element made of polycrystalline silicon because silicon is hardly soluble in the acid solution of this concentration.
  • the ceramic material for the sacrificial layers may be prepared by spray deposition technique which has such a merit that so-called "step coverage" is improved.
  • Another merit of the spray deposition technique resides in that holes can be filled up so that unevenness of an under-layer is absorbed to produce a smooth planar sacrificial layer.
  • the sacrificial layer made of ceramic material shows good crystallinity and hence has a smooth planar surface.
  • the ceramic materials can be easily processed by dry etching technique such as argon ion milling and reactive ion etching (RIE). Therefore, the sacrificial layers made of such ceramic material can be machined precisely by the dry etching technique.
  • dry etching technique such as argon ion milling and reactive ion etching (RIE). Therefore, the sacrificial layers made of such ceramic material can be machined precisely by the dry etching technique.
  • Each of the sacrificial layers consists of a single layer or a plurality of sub-layers. In the latter case, following variations or combinations of the sub-layers are preferably used:
  • a top sub-layer and/or a bottom sub-layer in each sub-sacrificial layer are/is made of the oxide ceramic material containing rare earth, Ba and Cu.
  • the other sub-layers other than the top sub-layer and bottom sub-layer can be made of silicon nitride (SiN x ) or phosphor silicate glass (PSG).
  • top and/or bottom sub-layer can be prepared in a form of a thin film in a sacrificial layer and hence can be prepared easily at the almost same manufacturing cost as known materials.
  • etching liquid penetrate quickly into the sacrificial layer, so that total sub-layers are dissolved quickly.
  • the bottom sub-layer is made of the ceramic material, the bottom sub-layer is etched firstly, so that the sacrificial layer can be totally removed before the other sub-layers are dissolved.
  • a top sub-layer and a bottom sub-layer in each sacrificial sub-layer are made of a material which give no bad influence to materials of which the substrate and the machine element are made such as silicon nitride (SiN x ) and phosphor silicate glass (PSG) which are the conventional materials, while at least one of intermediate sub-layers in each sub-sacrificial layer is made of the oxide ceramic material containing rare earth, Ba and Cu.
  • the intermediate sub-layers made of the oxide ceramic material is etched firstly so that the total of sub-sacrificial layers can be removed before the sacrificial layers are totally dissolved.
  • a merit of this second variation resides in that the top sub-layer and the bottom sub-layer show improved lattice-matching with an under-layer and with machine elements to be deposited thereon in addition to that undesirable influence due to mutual diffusion or migration can be minimized.
  • the movable machine element can be made of polycrystalline silicon which can be deposited by low-pressure chemical vapour deposition (CVD) technique.
  • CVD chemical vapour deposition
  • the movable machine element can be supported rotatable by a stationary shaft made of polycrystalline silicon and secured to the substrate.
  • the movable machine element can be a slider supported by a stationary shaft made of polycrystalline silicon in such a manner that the slider can move along a horizontal axis or a vertical axis with respect to the substrate.
  • the stationary shaft has preferably flanges at opposite ends, the flanges can be made of polycrystalline silicon.
  • the movable machine element can be a microgear, a micro cantilever, a micro rotor, micro slider, a micro valve or the other parts having dimensions of several tens to several hundreds microns. These machine parts may be separated from the substrate and mounted or assembled on another substrate.
  • the machine parts layers and removable sacrificial layers can be prepared by any known deposition techniques including the spray deposition technique, low-pressure chemical vapour deposition (CVD), plasma CVD and sputtering. The most suitable deposition technique can be used for each of these layers.
  • the machine parts layers and removable sacrificial layers can be removed selectively by any known removal technique. Usually, photolithography followed by RIE is preferably used.
  • the substrate is preferably a silicon single crystal substrate.
  • the process according to the present invention permits to fabricate micromachines of high precision owing to the sacrificial layer of oxide ceramic material Re-Ba-Cu-O.
  • the ceramic material for the sacrificial layer can be removed easily at high selectivity in comparison with the conventional PSG and silicon nitrides, so that a smooth planar layer can be prepared with improved processability. Therefore, machine elements fabricated by using the sacrificial layer according to the present invention have improved high precision because dimensional precision can be maintained during the removal stage of the sacrificial layers.
  • a micromachine was fabricated by using two sacrificial layers each made of Y 1 Ba 2 Cu 3 O 7-x by a process according to the present invention.
  • a first sacrificial layer 3 made of Y 1 Ba 2 Cu 3 O 7-x was formed (FIG. 1C) by spray deposition technique with a nitric acid solution in which Y 2 O 3 , BaCO 3 and CuO were dissolved under following conditions:
  • a first sacrificial layer 3 made of PSG formed on the same substrate showed the maximum roughness of more than 0.1 ⁇ m.
  • polycrystalline silicon layer 4 was deposited by low-pressure CVD technique (FIG. 1D).
  • the polycrystalline silicon layer 4 was patterned by lithography followed by RIE (FIG. 1E).
  • second sacrificial layer 5 made of Y 1 Ba 2 Cu 3 O 7-x was formed (FIG. 1F) by spray deposition technique with a nitric acid solution in which Y 2 O 3 , BaCO 3 and CuO were dissolved under following conditions:
  • the second sacrificial layer 5 was patterned with photo-resist by lithography and then was partly removed by RIE (FIG. 1G).
  • polycrystalline silicon layer 6 was deposited thereon by low-pressure CVD technique (FIG. 1H). A photo-resist layer is formed and then is patterned by lithography. After then, the polycrystalline silicon layer 6 was partly removed by RIE technique (FIG. 1I).
  • first sacrificial layer 3 and the second sacrificial layer 5 were etched with aqueous solution of hydrogen chloride (1/1000) (FIG. 1J) to produce a microgear 14 made of polycrystalline silicon rotatable-supported about a shaft 16 made of polycrystalline silicon.
  • a micromachine was fabricated on a silicon substrate by using sub-sacrificial layers made of Y 1 Ba 2 Cu 3 O 7-x as a top sub-layer and a bottom sub-layer in each of two sacrificial layers by the first variation of the present invention.
  • FIG. 1C illustrates an enlarged cross section of a part circled by I in FIG. 1C.
  • the first sacrificial layer 3 consisted of three sub-layers of a lower sub-layer 31 made of Y 1 Ba 2 Cu 3 O 7-x , an intermediate sub-layer 32 made of PSG and an upper sub-layer 33 made of Y 1 Ba 2 Cu 3 O 7-x .
  • These sub-layers 31, 32, 33 were prepared as following:
  • the lower sub-layer 31 made of Y 1 Ba 2 Cu 3 O 7-x was deposited on the patterned Si 3 N 4 layer 2 and on the silicon substrate 1 by sputtering under following conditions:
  • the PSG sub-layer 32 was deposited by CVD under following conditions:
  • the upper sub-layer 33 made of Y 1 Ba 2 Cu 3 O 7-x was deposited by sputtering under following conditions:
  • the resulting first sacrificial layer 3 of Y 1 Ba 2 Cu 3 O 7-x (a surface of Y 1 Ba 2 Cu 3 O 7-x sub-layer 33) has such a smooth surface that average roughness is about 50 ⁇ and the maximum roughness is about 100 ⁇ .
  • a first sacrificial layer 3 made of PSG alone formed on the same substrate showed the maximum roughness of more than 0.1 ⁇ m.
  • a polycrystalline silicon layer 4 was deposited by low-pressure CVD technique (FIG. 1D).
  • the polycrystalline silicon layer 4 was patterned by lithography followed by RIE technique (FIG. 1E).
  • FIG. 2B illustrates an enlarged cross section of a part circled by II in FIG. 1F.
  • the second sacrificial layer 5 consisted of three layers of a lower sub-layer 51 made of Y 1 Ba 2 Cu 3 O 7-x , an intermediate sub-layer 52 made of SiN x and an upper sub-layer 53 made of Y 1 Ba 2 Cu 3 O 7-x .
  • These sub-layers 51,52, 53 were prepared as following:
  • the lower sub-layer 51 made of Y 1 Ba 2 Cu 3 O 7-x was deposited on the processed polycrystalline silicon layer 4 and on the sacrificial layer 3 by sputtering under following conditions:
  • the SiN x sub-layer 52 was deposited by plasma CVD under following conditions:
  • the upper sub-layer 53 made of Y 1 Ba 2 Cu 3 O 7-x was deposited by sputtering under following conditions:
  • the resulting second sacrificial layer 5 (a surface of Y 1 Ba 2 Cu 3 O 7-x sub-layer 53) also has a smooth surface.
  • the second sacrificial layer 5 was pattered by lithography and was partly removed by RIE technique (FIG. 1G).
  • polycrystalline silicon layer 6 was deposited thereon by low-pressure CVD technique (FIG. 1H). A photo-resist layer is formed and then is patterned by lithography. After then, the polycrystalline silicon layer 6 was partly removed by RIE technique (FIG. 1I).
  • first sacrificial layer 3 and the second sacrificial layer 5 were etched with aqueous solution of hydrogen chloride (1/1000) as is shown in FIG. 1J to produce a microgear 14 made of polycrystalline silicon rotatable-supported about a shaft 16 made of polycrystalline silicon.
  • the SiN x sub-layer in the sacrificial layers in the Example 2 was prepared by CVD, this sub-layer can be prepared by any known technique such as sputtering.
  • a micromachine was fabricated on a silicon substrate by using three sub-sacrificial layers including an intermediate sub-layer made of Y 1 Ba 2 Cu 3 O 7-x by the process according to the present invention.
  • FIG. 2A illustrates an enlarged cross section of a pan circled by I in FIG. 1C.
  • first sacrificial layer 3 consisted of three sub-layers of a lower sub-layer 31 made of PSG, an intermediate sub-layer 32 made of Y 1 Ba 2 Cu 3 O 7-x , and an upper sub-layer 33 made of PSG.
  • the first sacrificial layer consisting of three sub-layers 31, 32, 33 was prepared as following:
  • the lower PSG sub-layer 31 was deposited on the patterned Si 3 N 4 layer 2 and on the silicon substrate 1 by CVD under following conditions:
  • the intermediate sub-layer 32 made of Y 1 Ba 2 Cu 3 O 7-x was deposited by sputtering under following conditions:
  • the upper PSG sub-layer 33 was deposited by CVD under following conditions:
  • the resulting first sacrificial layer 3 of Y 1 Ba 2 Cu 3 O 7-x (a surface of PSG sub-layer 33) has such a smooth surface that the maximum roughness is about 100 ⁇ .
  • a first sacrificial layer 3 made of PSG alone formed on the same substrate showed the maximum roughness of more than 0.1 ⁇ m.
  • polycrystalline silicon layer 4 was deposited by low-pressure CVD technique as is shown in FIG. 1D.
  • a pattern was formed by lithography and then the polycrystalline silicon layer 4 is processed by RIE technique as is shown in FIG. 1E.
  • FIG. 2B illustrates an enlarged cross section of a part circled by II in FIG. 1F.
  • the second sacrificial layer 5 consisted of three sub-layers of a lower sub-layer 51 made of SiN x , an intermediate sub-layer 52 made of Y 1 Ba 2 Cu 3 O 7-x and an upper sub-layer 53 made of SiN x .
  • These sub-layers 51, 52, 53 were prepared as following:
  • the lower SiN x sub-layer 51 was deposited on the patterned polycrystalline silicon layer 4 and on the sacrificial layer 3 by plasma CVD under following conditions:
  • the intermediate sub-layer 52 made of Y 1 Ba 2 Cu 3 O 7-x was deposited by sputtering under following conditions:
  • the upper SiN x sub-layer 53 was deposited by by plasma CVD under following conditions:
  • the resulting second sacrificial layer 5 (a surface of SiN x sub-layer 53) also has a smooth surface.
  • polycrystalline silicon layer 6 was deposited thereon by low-pressure CVD technique (FIG. 1H). A photo-resist layer is formed and then is patterned by lithography. After then, the polycrystalline silicon layer 6 was partly removed by RIE technique (FIG. 1I).
  • first sacrificial layer 3 and the second sacrificial layer 5 were etched with aqueous solution of hydrogen chloride (1/1000) as is shown in FIG. 1J to produce a microgear 14 made of polycrystalline silicon rotatable-supported about a shaft 16 made of polycrystalline silicon.
  • the sub-layer of ceramic material in the Example 3 was prepared by sputtering, the sub-layer can be prepared by any known technique such as CVD.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
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  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
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  • Formation Of Insulating Films (AREA)
  • Compositions Of Oxide Ceramics (AREA)
US07/887,749 1991-05-24 1992-05-26 Process for fabricating micromachines Expired - Fee Related US5366587A (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP14946391A JPH04348822A (ja) 1991-05-24 1991-05-24 微小機械の作製方法
JP14946191A JPH04348820A (ja) 1991-05-24 1991-05-24 微小機械の作製方法
JP3-149461 1991-05-24
JP3-149463 1991-05-24
JP14946291A JPH04348821A (ja) 1991-05-24 1991-05-24 微小機械の作製方法
JP3-149462 1991-05-24

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EP (1) EP0518112B1 (de)
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WO1995034917A1 (en) * 1994-06-10 1995-12-21 The Regents Of The University Of California Cantilever pressure transducer
US5489812A (en) * 1991-06-11 1996-02-06 International Business Machines Corporation Micro actuator
US5789045A (en) * 1994-04-15 1998-08-04 The United States Of America As Represented By The Secretary Of The Air Force Microtubes devices based on surface tension and wettability
US5868680A (en) * 1997-09-23 1999-02-09 The Regents Of The University Of California Quantitative characterization of fibrillatory spatiotemporal organization
US6036872A (en) * 1998-03-31 2000-03-14 Honeywell Inc. Method for making a wafer-pair having sealed chambers
US6059001A (en) * 1994-04-15 2000-05-09 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for manufacturing microtubes with axially variable geometries
US6171972B1 (en) 1998-03-17 2001-01-09 Rosemount Aerospace Inc. Fracture-resistant micromachined devices
US6215221B1 (en) * 1998-12-29 2001-04-10 Honeywell International Inc. Electrostatic/pneumatic actuators for active surfaces
US6363712B1 (en) 1996-06-27 2002-04-02 The United States Of America As Represented By The United States Department Of Energy Gas-driven microturbine
US6621184B1 (en) * 2001-09-07 2003-09-16 Cypress Semiconductor Corporation Substrate based pendulum motor
US20040046473A1 (en) * 2002-08-29 2004-03-11 Koeneman Paul B. Micro-electromechanical energy storage device
US20040080484A1 (en) * 2000-11-22 2004-04-29 Amichai Heines Display devices manufactured utilizing mems technology
US20040180466A1 (en) * 2001-05-09 2004-09-16 Vittorio Foglietti Surface micromachining process for manufacturing electro-acoustic transducers, particularly ultrasonic transducers, obtained transducers and intermediate products
US20060147131A1 (en) * 2001-04-30 2006-07-06 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US20090296185A1 (en) * 2008-06-03 2009-12-03 Olympus Corporation Stacked structure, light controlling apparatus, and method of manufacturing stacked structure
JP2011079130A (ja) * 2009-10-07 2011-04-21 Nivarox-Far Sa 微細加工可能な材料から作られる自由に搭載されるホイール・セットおよびそれを製作する方法
USRE45057E1 (en) * 1996-01-26 2014-08-05 Seiko Epson Corporation Method of manufacturing an ink jet recording head having piezoelectric element
US11878906B2 (en) 2018-11-19 2024-01-23 Sciosense B.V. Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device

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US5489812A (en) * 1991-06-11 1996-02-06 International Business Machines Corporation Micro actuator
US5633552A (en) * 1993-06-04 1997-05-27 The Regents Of The University Of California Cantilever pressure transducer
US5789045A (en) * 1994-04-15 1998-08-04 The United States Of America As Represented By The Secretary Of The Air Force Microtubes devices based on surface tension and wettability
US6059001A (en) * 1994-04-15 2000-05-09 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for manufacturing microtubes with axially variable geometries
WO1995034917A1 (en) * 1994-06-10 1995-12-21 The Regents Of The University Of California Cantilever pressure transducer
USRE45057E1 (en) * 1996-01-26 2014-08-05 Seiko Epson Corporation Method of manufacturing an ink jet recording head having piezoelectric element
US6363712B1 (en) 1996-06-27 2002-04-02 The United States Of America As Represented By The United States Department Of Energy Gas-driven microturbine
US5868680A (en) * 1997-09-23 1999-02-09 The Regents Of The University Of California Quantitative characterization of fibrillatory spatiotemporal organization
US6171972B1 (en) 1998-03-17 2001-01-09 Rosemount Aerospace Inc. Fracture-resistant micromachined devices
USRE39143E1 (en) * 1998-03-31 2006-06-27 Honeywell International Inc. Method for making a wafer-pair having sealed chambers
US6036872A (en) * 1998-03-31 2000-03-14 Honeywell Inc. Method for making a wafer-pair having sealed chambers
US6215221B1 (en) * 1998-12-29 2001-04-10 Honeywell International Inc. Electrostatic/pneumatic actuators for active surfaces
US20040080484A1 (en) * 2000-11-22 2004-04-29 Amichai Heines Display devices manufactured utilizing mems technology
US20060147131A1 (en) * 2001-04-30 2006-07-06 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US7074634B2 (en) * 2001-05-09 2006-07-11 Consiglio Nazionale Delle Ricerche Surface micromachining process for manufacturing electro-acoustic transducers, particularly ultrasonic transducers, obtained transducers and intermediate products
US20040180466A1 (en) * 2001-05-09 2004-09-16 Vittorio Foglietti Surface micromachining process for manufacturing electro-acoustic transducers, particularly ultrasonic transducers, obtained transducers and intermediate products
US6621184B1 (en) * 2001-09-07 2003-09-16 Cypress Semiconductor Corporation Substrate based pendulum motor
US6770997B2 (en) * 2002-08-29 2004-08-03 Harris Corporation Micro-electromechanical energy storage device
US20040046473A1 (en) * 2002-08-29 2004-03-11 Koeneman Paul B. Micro-electromechanical energy storage device
US20090296185A1 (en) * 2008-06-03 2009-12-03 Olympus Corporation Stacked structure, light controlling apparatus, and method of manufacturing stacked structure
EP2131236A1 (de) 2008-06-03 2009-12-09 Olympus Corporation Stapelstruktur, Lichtsteuerungsvorrichtung und Herstellungsverfahren für eine Stapelstruktur
JP2011079130A (ja) * 2009-10-07 2011-04-21 Nivarox-Far Sa 微細加工可能な材料から作られる自由に搭載されるホイール・セットおよびそれを製作する方法
US11878906B2 (en) 2018-11-19 2024-01-23 Sciosense B.V. Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device

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DE69218667T2 (de) 1997-09-25
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CA2069227C (en) 1996-10-22
EP0518112B1 (de) 1997-04-02

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