US3735727A - Device for the precipitation of layers of semiconductor material - Google Patents

Device for the precipitation of layers of semiconductor material Download PDF

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Publication number
US3735727A
US3735727A US00193743A US3735727DA US3735727A US 3735727 A US3735727 A US 3735727A US 00193743 A US00193743 A US 00193743A US 3735727D A US3735727D A US 3735727DA US 3735727 A US3735727 A US 3735727A
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United States
Prior art keywords
reaction
reaction space
exhaust chamber
openings
wall
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Expired - Lifetime
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US00193743A
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English (en)
Inventor
E Sussmann
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Siemens AG
Siemens Corp
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Siemens Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Definitions

  • ABSTRACT Epitaxial device in which semiconductor wafers to be coated are disposed at the bottom of a vertical cylindrical reaction vessel and are heated to the high temperature required for precipitation by a heat source arranged underneath the bottom.
  • Fresh reaction gas is fed to the heated semiconductorvwafers from above and the spent gas is removed again upwards through holes arranged along an annular zone in the wall of the reaction vessel.
  • the spent gas then passes to two exhaust chambers connected in series. The flow resistance of the gas discharge being essentially determined by the flow resistance between the two exhaust chambers.
  • the present invention relates to a device for the precipitation of layers of semiconductor material, particularly of monocrystalline material, from an appropriate reaction gas on the surface of semiconductor wafers disposed at the bottom of a vertical cylindrical reaction vessel and heated by a heat source arranged underneath the bottom to the high temperature required for precipitation.
  • Fresh reaction gas is fed to the heated semiconductor wafers via a feed tube which extends into the reaction space of the reaction vessel from above and which, in particular, is swivable.
  • the spent reaction gas upwardly leaves the semiconductor wafers to be doated.
  • the openings leading from the reaction space into the inner exhaust chamber are arranged above the mouth of the feed tube for the fresh reaction gas into the reaction space and above the connecting openings between the two concentric exhaust chambers.
  • the total flow resistance of the openings between the reaction space and the inner exhaust chamber is adjusted to be smaller than the total flow resistance of the openings between the two concentric exhaust-chambers.
  • an important feature of this device consists in the fact that the openings between the reaction space and the inner exhaust chamber, as well as the openings between the two exhaust chambers, are made in the corresponding walls along the azimuthal ring zone respectively and are arranged within the individual ring zones at equal spacings from each other.
  • the exhaust gas upon leaving the reaction space, encounters at first no appreciable flow resistance.
  • the latter occurs rather only inthe transition from the inner exhaust chamber to the outer exhaust chamber.
  • There the danger of undesired precipitation is greatest.
  • this point is located outside of the reaction space proper, so that disturbing or defect nuclei produced there cannot fall on the semiconductor wafers to be coated, which are situated at the bottom of the reaction vessel.
  • a uniform distribution of the discharge openings from the reaction space especially their design as an azimuthal horizontal annular slot, interrupted by at most a few equidistant spacers, results in a uniform exhaust of the spent gas into the inner exhaust chamber.
  • the gas venting tube opening into the outer exhaust chamber is not critical.
  • An adjustable valve arranged in it permits more or less flow of the discharged gases, as required.
  • the total flow resistance of the discharge point for the spent reaction gas should be such that the gas between the two exhaust chambers encounters a substantially larger, about 20 to times larger, flow resistance than in the transition from. the reaction space to the inner exhaust chamber. However, it depends in each case on the desired reaction conditions, particularly also on the desired dwell time of the reaction gas in the reaction space, whether the total flow resistance of the gas discharge is adjusted to be large or small.
  • the already mentioned valve for adjusting the discharge resistance in the gas venting tube which is suitably made wide, from the outer exhaust chamber represents a simple adjustment means, so that it is recommended to make the flow resistance from the reaction space to the outer exhaust chamber not too large.
  • the arrangement is appropriately operated observing the considerations that have already been set forth in U. S. Pat. Nos. 3,505499; 3,519,798 and 3,536,892.
  • the pressure of the inflowing reaction gas is chosen in the feed tube in such a manner that the reaction gas reaches the semiconductor wafers disposed at the bottom of the reaction vessel with certainty in spite of the resistance of the exhaust gas. Accordingly, it is reccommend here that the fresh reaction gas enter the reaction space with a Reynolds number of at most 50, or in particular, at most 40.
  • the gas feeding tube is swivable so that the point of entry of the fresh reaction gas is along a path running above the semiconductor wafers to be coated and which is adapted to the periphery of the total precipitation area given by the totality of the semiconductor wafers present, exhibiting radial symmetry with respect to its center, in such a manner that the image generated by orthogonal projection of the point of entry on the total precipitation area along a path on the total precipitation area becomes slower the further the respective point of the trajectory is removed from the center of the total precipitation area. Furthermore, points of the image path having the same radial distance from the center of the total precipitation area, are traversed by the image with equal frequency, as counted over the the total precipitation time.
  • the cylindrical reaction space 1 is closed off at the bottom by a cup-shaped lower part 2, and by a cylindrical upper part 3. These parts consist practically of quartz.
  • the reaction space is closed at the top by a lid 4, for instance, of alloy steel.
  • the feed tube 9, for the fresh reaction gas, is brought through this lid.
  • a viewingwindow 12, for pyrometrically measuring the temperature at the semiconductor wafers to be coated, is
  • the wafers to be coated 5 are disposed at the bottom of the cup-shaped lower part 2.
  • the wafers are heated from below via heat equalizing plate 7, the heat being supplied by a heating element 6, through which current flows.
  • the lower part 2 of the reaction space 1 and the heating device 6, 7 are appropriately located in a cooled casing metal 8.
  • the fresh reaction gas is supplied via the gas feeding tube 9 which penetrates the metal lid 4. It is desirable that the tube is swivable in the lid.
  • the appropriate seals 11, which prevent the reaction gas from escaping at the feed through point must be chemically andthermally resistant, resilient material. Reference can be made to the above-mentioned patents, regarding the detailed design of the gas entry point 9.
  • the lid 4 extends all around beyond the wall 3 of the cylindrical reaction vessel. From its periphery an annular wall 13 extends downward, which forms the outer boundary of the outer annular exhaust chamber 14. Gas discharge tube 23 is in this wall 13. A second annular wall extends further inward and is tightly connected, on the one hand, with the lid 4, and on the other hand, at its lower edge, with the already mentioned wall 13. In this manner the outer exhaust chamber 14 is formed.
  • the wall 15 contains a number of evenly spaced holes 16, which form the connection between the interior of the outer exhaust chamber 14 and the inner exhaust chamber 17 which is arranged between the wall 15 and the wall 3 of the reaction space 1. It is also hermetically sealed against the outer space by appropriate wall parts and has only one connection to the outer exhaust chamber 14 and the reaction space 1.
  • connection between the reaction space 1 and the inner, annular exhaust chamber 17 is situated directly below the lid 4. It consists of one or several azimuthal slots 18, the total flow resistance of which is considerably smaller compared to that of the openings 16, at least by a factor of one-fifth and preferably onetwentieth or one-hundredth. All of the openings 18 and the openings 16, respectively, have the same shape and dimensions.
  • the larger flow resistance between the two exhaust chambers, as compared to that between the inner exhaust chamber and the reaction space can be achieved, on the one hand, by making the openings 18 correspondingly larger than the openings 16 and/or by providing correspondingly more openings 18 as compared to the openings 16.
  • the arrangement of the openings 18 immediately below the lid 4 ensures the no dead spaces are formed in the reaction space with respect to the gas flow.
  • the openings 18 must be arranged above the entry point for the fresh reaction gas, i.e., the mouth of the gas feeding tube 9.
  • the openings 18 must be arranged above the openings 16, so that the spent reaction gas flowing in the chamber 17 must flow somewhat downward.
  • the improvement which comprises an exhaust system for the spent reaction gas from the reaction space consisting of two annular exhaust chambers which are disposed concentrically with respect to each other and to the vertical cylindrical reaction space with a common wall between the inner of said two annular exhaust chambers and said reaction space and a common wall between the outer of said two exhaust chambers and said inner exhaust chamber, said exhaust chambers are connected in series as to the flow of the spent reaction gas via openings in the wall between the reaction space and the inner exhaust chamber and the wall between the two exhaust chambers and a gas venting tube connected to the outer
  • openings between the reaction space and the inner exhaust chamber are horizontal slots which complement each other to form a horizontal annular slot interrupted only by local spacers between a lid of the reaction vessel and the upper edge of the cylindrical wall of the reaction space.
  • the outer exhaust chamber is formed by two annular walls which extend downward from the lid of the reaction vessel and are arranged concentrically with respect to each other and to the reaction space, said walls being hermetically connected with each other, a gas venting tube attached at the outer wall and connecting openings in the inner wall connecting to the inner exhaust chamber.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
US00193743A 1970-11-05 1971-10-29 Device for the precipitation of layers of semiconductor material Expired - Lifetime US3735727A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2054538A DE2054538C3 (de) 1970-11-05 1970-11-05 Vorrichtung zum Abscheiden von Schichten aus Halbleitermaterial

Publications (1)

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US3735727A true US3735727A (en) 1973-05-29

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US00193743A Expired - Lifetime US3735727A (en) 1970-11-05 1971-10-29 Device for the precipitation of layers of semiconductor material

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US (1) US3735727A (show.php)
CA (1) CA948075A (show.php)
DE (1) DE2054538C3 (show.php)
FR (1) FR2113442A5 (show.php)
GB (1) GB1328584A (show.php)
IT (1) IT939155B (show.php)
NL (1) NL7115280A (show.php)
SE (1) SE363246B (show.php)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
US4291640A (en) * 1977-09-09 1981-09-29 The Continental Group, Inc. Powder coating apparatus for two-piece cans
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
NL1022155C2 (nl) * 2002-12-12 2004-06-22 Otb Group Bv Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat.

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2623524B1 (fr) * 1987-11-20 1990-03-30 Lami Philippe Perfectionnement au procede et au dispositif de depot metallique sur un echantillon

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US4291640A (en) * 1977-09-09 1981-09-29 The Continental Group, Inc. Powder coating apparatus for two-piece cans
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
NL1022155C2 (nl) * 2002-12-12 2004-06-22 Otb Group Bv Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat.
WO2004053190A1 (en) * 2002-12-12 2004-06-24 Otb Group B.V. Method and apparatus for treating a substrate
JP2006509907A (ja) * 2002-12-12 2006-03-23 オーテーベー、グループ、ベスローテン、フェンノートシャップ 基板を処理する方法および装置
US20060231031A1 (en) * 2002-12-12 2006-10-19 Otb Group B.V. Method and apparatus for treating a substrate
US7645495B2 (en) 2002-12-12 2010-01-12 Otb Solar B.V. Method and apparatus for treating a substrate

Also Published As

Publication number Publication date
FR2113442A5 (show.php) 1972-06-23
SE363246B (show.php) 1974-01-14
GB1328584A (en) 1973-08-30
DE2054538B2 (de) 1978-07-27
DE2054538A1 (de) 1972-05-10
DE2054538C3 (de) 1979-03-22
IT939155B (it) 1973-02-10
CA948075A (en) 1974-05-28
NL7115280A (show.php) 1972-05-09

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