CA948075A - Method of depositing a layer of semiconductor material - Google Patents

Method of depositing a layer of semiconductor material

Info

Publication number
CA948075A
CA948075A CA126,834A CA126834A CA948075A CA 948075 A CA948075 A CA 948075A CA 126834 A CA126834 A CA 126834A CA 948075 A CA948075 A CA 948075A
Authority
CA
Canada
Prior art keywords
depositing
layer
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA126,834A
Other languages
English (en)
Other versions
CA126834S (en
Inventor
Erhard Sussmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA948075A publication Critical patent/CA948075A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
CA126,834A 1970-11-05 1971-11-04 Method of depositing a layer of semiconductor material Expired CA948075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2054538A DE2054538C3 (de) 1970-11-05 1970-11-05 Vorrichtung zum Abscheiden von Schichten aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
CA948075A true CA948075A (en) 1974-05-28

Family

ID=5787272

Family Applications (1)

Application Number Title Priority Date Filing Date
CA126,834A Expired CA948075A (en) 1970-11-05 1971-11-04 Method of depositing a layer of semiconductor material

Country Status (8)

Country Link
US (1) US3735727A (show.php)
CA (1) CA948075A (show.php)
DE (1) DE2054538C3 (show.php)
FR (1) FR2113442A5 (show.php)
GB (1) GB1328584A (show.php)
IT (1) IT939155B (show.php)
NL (1) NL7115280A (show.php)
SE (1) SE363246B (show.php)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US4291640A (en) * 1977-09-09 1981-09-29 The Continental Group, Inc. Powder coating apparatus for two-piece cans
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
FR2623524B1 (fr) * 1987-11-20 1990-03-30 Lami Philippe Perfectionnement au procede et au dispositif de depot metallique sur un echantillon
NL1022155C2 (nl) * 2002-12-12 2004-06-22 Otb Group Bv Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system

Also Published As

Publication number Publication date
FR2113442A5 (show.php) 1972-06-23
US3735727A (en) 1973-05-29
SE363246B (show.php) 1974-01-14
GB1328584A (en) 1973-08-30
DE2054538B2 (de) 1978-07-27
DE2054538A1 (de) 1972-05-10
DE2054538C3 (de) 1979-03-22
IT939155B (it) 1973-02-10
NL7115280A (show.php) 1972-05-09

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