US20190376187A1 - METHOD FOR FORMING Si-CONTAINING FILM - Google Patents

METHOD FOR FORMING Si-CONTAINING FILM Download PDF

Info

Publication number
US20190376187A1
US20190376187A1 US16/486,258 US201816486258A US2019376187A1 US 20190376187 A1 US20190376187 A1 US 20190376187A1 US 201816486258 A US201816486258 A US 201816486258A US 2019376187 A1 US2019376187 A1 US 2019376187A1
Authority
US
United States
Prior art keywords
containing film
chemical vapor
vapor deposition
forming
lewis base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/486,258
Other languages
English (en)
Inventor
Naoto Noda
Jean-Marc Girard
Ivan OSCHCHEPKOV
Guillaume DURIEUX
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Publication of US20190376187A1 publication Critical patent/US20190376187A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Definitions

  • the present invention relates to a method for forming an Si-containing film.
  • Bottom-up deposition technology that forms a film in a state in which fluidity is maintained, is known as technology that forms a seamless film having a small number of voids on a substrate having a fine trench at a low temperature while reducing a situation in which the semiconductor device is thermally damaged.
  • the application of the bottom-up deposition technology is limited to deposition of an Si oxide film (see Patent Literature 1), and a method that can form an Si-containing film (e.g., Si film or SiC film) other than an Si oxide film using the bottom-up deposition technology has not yet been proposed. Therefore, it has been desired to provide a deposition process whereby a seamless Si-containing film having a small number of voids can be formed on a substrate having a fine trench at a lower temperature.
  • an Si-containing film e.g., Si film or SiC film
  • the invention was conceived in order to solve at least some of the above problems, and may be implemented as embodiments or application examples as described below.
  • a method for forming an Si-containing film that forms an Si-containing film on a substrate by a chemical vapor deposition (hereinafter may be referred as “CVD”) process a method for forming an Si-containing film that forms an Si-containing film on a substrate by a chemical vapor deposition (hereinafter may be referred as “CVD”) process
  • the first feed gas that includes one or more Si—Si bonds undergoes a condensation reaction in the presence of the Lewis base (catalyst), and an Si-containing film is formed by the resulting condensate.
  • Si—Si bonds e.g., oligosilane
  • the step (a) may produce a silylene in the chemical vapor deposition chamber as a reaction intermediate.
  • the first feed gas that includes one or more Si—Si bonds can produce a silylene (i.e., chemically active reaction intermediate) in the presence of the Lewis base (catalyst). Since the silylene has high reactivity, an Si-containing film is formed by the polymerization reaction of the first feed gas even at a low temperature.
  • the total content ratio of a nitrogen atom, a carbon atom, a boron atom, a sulfur atom, and a phosphorus atom derived from the Lewis base in the Si-containing film may be 0 to 5%.
  • the Lewis base functions as a catalyst during the reaction, the elements (nitrogen atom, carbon atom, boron atom, sulfur atom, and phosphorus atom) included in the Lewis base are incorporated in the Si-containing film to only a small extent. Therefore, it is possible to obtain an Si-containing film that has a low content with respect to the elements derived from the Lewis base.
  • the chemical vapor deposition process may be effected at 0 to 400° C.
  • the chemical vapor deposition process may be a deposition process that forms an Si-containing film on a substrate that has a recess to fill at least part of the recess with the Si-containing film, and the recess may be filled with a polymer obtained by condensation of the first feed gas in a state in which the polymer has fluidity.
  • the expression “at least part of the recess” refers to a range that is determined by a person skilled in the art taking account of the properties of the substrate, the thickness of the Si-containing film, and the like.
  • the expression “fill at least part of the recess with the Si-containing film” means that 1 to 100% (preferably 5 to 100%) of the surface area of the recess is covered with the Si-containing film.
  • a bottom-up deposition process that utilizes flowable CVD that does not use a plasma has not been known.
  • the condensate of the first feed gas produced through a silylene (reaction intermediate) flows onto the substrate having a recess in a state in which the condensate has fluidity, and is grown through a further condensation reaction to form an Si-containing film at a low temperature. This makes it possible to obtain a seamless Si-containing film having a small number of voids.
  • the first feed gas may be a compound represented by the following general formula (1),
  • X is a halogen atom
  • a is a number from 2 to 6
  • b is a number from 0 to 13
  • c is a number from 1 to 14.
  • the first feed gas is an oligosilane that includes at least one (one or more) Si—Si bond and a halogen atom
  • a silylene is produced at a low temperature due to the Lewis base that functions as a catalyst, and an Si-containing film can be obtained.
  • the first feed gas may be at least one gas selected from a group consisting of hexachlorodisilane, pentachlorodisilane, tetrachlorodisilane, trichlorodisilane, dichlorodisilane, monochlorodisilane, octachlorotrisilane, heptachlorotrisilane, hexachlorotrisilane, pentachlorotrisilane, tetrachlorotrisilane, trichlorotrisilane, dichlorotrisilane, and mono chlorotrisilane.
  • the Lewis base may be at least one compound selected from a group consisting of a tertiary amine and a heterocyclic amine.
  • the tertiary amine and the heterocyclic amine may be alkylamines having 3 to 24 carbon atoms.
  • the Lewis base may be at least one compound selected from a group consisting of trimethylamine, triethylamine, pyridine, pyrimidine, pyrazine, and derivatives thereof.
  • Examples of the derivatives include dimethylpyridine, dimethylpyrimidine, methylpyrazine, and the like.
  • trimethylamine that is gaseous at room temperature is suitably used for the method for forming an Si-containing film according to Application Example 10 since the flow rate can be easily controlled using a flow rate control means (e.g., mass flow controller).
  • Triethylamine and pyridine are liquid at room temperature. However, the vapor of triethylamine and pyridine can be easily fed using a bubbling method since these compounds have relatively high vapor pressure.
  • trimethylamine, triethylamine, and pyridine have a vapor pressure higher than that of an alkylamine having a large number of carbon atoms, it is possible to easily remove these compounds from the resulting film by purging and/or a reduction in pressure.
  • the chemical vapor deposition process may be effected in a state in which the pressure inside the chemical vapor deposition chamber is 0.1 Torr to atmospheric pressure.
  • the chemical vapor deposition process may further include a step (b) that adds a second feed gas, the second feed gas being at least one compound selected from a group consisting of a compound having at least one carbon-carbon unsaturated bond, an inert gas, a reducing gas, an oxidizing gas, and the Lewis base.
  • the second feed gas may be a compound having 2 to 10 carbon atoms.
  • the second feed gas may be a halogenated hydrocarbon.
  • the second feed gas may be a compound represented by the following general formula (2),
  • X is a halogen atom
  • a is a number from 2 to 9
  • b is a number from 0 to 19
  • c is a number from 1 to 20.
  • the chemical vapor deposition process may further include a step (c) that performs a treatment in the presence of at least one compound selected from a group consisting of an inert gas, a reducing gas, an oxidizing gas, a nitriding gas, and the Lewis base, and/or a step (d) that applies an energy beam.
  • the energy beam may be one of a particle beam including an ion beam, an electron beam and a neutron beam, and ultraviolet light.
  • the step (c) may be performed at a temperature of 0 to 800° C.
  • step (c) When a treatment that utilizes an inert gas, a Lewis base, or a reducing gas is performed in the step (c), an Si film or an Si-rich oxide film is formed.
  • An SiO 2 film is obtained when a treatment is performed using an oxidizing gas
  • an SiN film is obtained when a treatment is performed using a nitriding gas.
  • a film that exhibits high oxidation resistance can be obtained when the treatment is an annealing treatment.
  • the resulting film can be modified by applying the energy beam in the step (d). Note that both of the step (c) and the step (d) may be performed, or one of the step (c) and the step (d) may be performed.
  • the thickness of the Si-containing film formed on the bottom surface of the recess be larger than the thickness of the Si-containing film formed on the side surface of the recess.
  • the Si-containing film formed on the bottom surface of the recess is larger than the thickness of the Si-containing film formed on the side surface of the recess, the Si-containing film is a fluid film that has been deposited in a state in which fluidity is maintained (hereinafter may be referred to as “flowable CVD”). It is possible to obtain a seamless film having a small number of voids by effecting flowable CVD.
  • an oxygen-containing impurity content in the Lewis base may be 0 to 1 wt %.
  • the substrate may have a recess having an aspect ratio (depth:width) of 1:1 to 20:1.
  • the first feed gas that includes one or more Si—Si bonds undergoes a condensation reaction in the presence of the Lewis base (catalyst), and a silylene (i.e., chemically active reaction intermediate) is formed.
  • the condensate of the first feed gas produced through the silylene (reaction intermediate) flows onto the substrate in a state in which the condensate has fluidity, and is grown through a further condensation reaction to form an Si-containing film at a low temperature. This makes it possible to obtain a seamless Si-containing film having a small number of voids.
  • FIG. 1 is a schematic configuration diagram illustrating a CVD device that is preferably used in one embodiment of the invention.
  • FIG. 2 illustrates the flow of a chemical vapor deposition process according to one embodiment of the invention.
  • FIG. 3 illustrates another flow of a chemical vapor deposition process according to one embodiment of the invention.
  • FIG. 4 illustrates the XPS analysis results for the silicon-containing film in Example 1.
  • FIG. 5 illustrates the XPS analysis results for the silicon-containing film in Example 2.
  • FIG. 6 illustrates an SEM photograph of the silicon-containing film in Example 3.
  • FIG. 7 illustrates the XPS analysis results for the silicon-containing film in Example 3.
  • FIG. 8 illustrates the XPS analysis results for the silicon-containing film in Example 5.
  • Si-containing film used herein includes a film that includes silicon and an element other than silicon, and a film (silicon film) that includes only silicon.
  • a method for forming an Si-containing film according to one embodiment of the invention forms an Si-containing film on a substrate by a chemical vapor deposition process, wherein the chemical vapor deposition process includes a step (a) that reacts a first feed gas that includes one or more Si—Si bonds in a chemical vapor deposition chamber in the presence of a Lewis base catalyst.
  • the method for forming an Si-containing film may optionally further include: a step (b) that adds a second feed gas; a step (c) that performs a treatment in the presence of at least one compound selected from the group consisting of an inert gas, a reducing gas, an oxidizing gas, a nitriding gas, and the Lewis base; and a step (d) that applies an energy beam.
  • the method for forming an Si-containing film may be used to form an Si film, an SiC film, and various other Si-containing films on a substrate, and may suitably be used in the fields of a semiconductor, a transistor, a hybrid integrated circuit, an electrode material, and electronics (e.g., dye-sensitized solar cell).
  • the first feed gas that includes one or more Si—Si bonds is reacted in the chemical vapor deposition chamber in the presence of the Lewis base catalyst.
  • the Si-containing film may be formed on the substrate using an arbitrary chemical vapor deposition process known in the art.
  • the first feed gas and the Lewis base catalyst may be simultaneously introduced into the chemical vapor deposition chamber.
  • the first feed gas and the Lewis base catalyst may be introduced into the chemical vapor deposition chamber for a time necessary for an Si-containing film having the desired thickness and fluidity to be formed.
  • the Si-containing film may be formed by plasma CVD, or may be formed by CVD that does not utilize a plasma.
  • step (a) it is preferable to react the first feed gas in the presence of the Lewis base catalyst without introducing an oxidizing agent into the chemical vapor deposition chamber.
  • a silylene i.e., chemically active reaction intermediate
  • an Si-containing film can be formed by flowable CVD.
  • a silylene is rarely formed in an environment in which an oxidizing agent is present (e.g., ALD method), and an SiO 2 film that does not have fluidity tends to be formed.
  • the CVD process that continuously introduces the first feed gas into the chemical vapor deposition chamber can be effected until an Si-containing film is formed so that part or the entirety of a recess formed in the substrate is filled therewith, for example.
  • FIG. 1 is a schematic configuration diagram illustrating a CVD device that is preferably used in one embodiment of the invention.
  • FIG. 2 illustrates the flow of the chemical vapor deposition process according to one embodiment of the invention.
  • a substrate 103 is placed in a chemical vapor deposition chamber 102 that is provided in a CVD device 101 .
  • the chemical vapor deposition chamber 102 is designed so that 1 to 200 substrates (on which a silicon-containing film is to be formed (deposited)) can be placed.
  • the substrate 103 on which the silicon-containing film is to be formed (deposited)) differs depending on the application.
  • the substrate 103 include, but are not limited to, a solid substrate such as a metal substrate (e.g., Au, Pd, Rh, Ru, W, Al, Ni, Ti, Co, Pt, and a metal silicide (e.g., TiSi 2 , CoSi 2 and NiSi 2 ), a metal nitride-containing substrate (e.g., TaN, TiN, TiAlN, WN, TaCN, TiCN, TaSiN, and TiSiN), a semiconductor material (e.g., Si, SiGe, GaAs, InP, diamond, GaN, and SiC), an insulator (e.g., SiO 2 , Si 3 N 4 , SiON, HfO 2 , Ta 2 O 5 , ZrO 2 , TiO 2 , Al 2 O 3 , and barium strontium titanate), and a substrate formed of any possible combination of these materials.
  • a metal substrate e.g., Au, Pd, Rh,
  • the pressure inside the chemical vapor deposition chamber 102 is adjusted to a predetermined pressure by appropriately adjusting an APC valve 405 , and the temperature inside the chemical vapor deposition chamber 102 is adjusted to a predetermined temperature by utilizing a temperature control mechanism (not illustrated in the drawings).
  • the first feed gas that includes one or more Si—Si bonds, and vapor of the Lewis base (catalyst), are introduced into the chemical vapor deposition chamber 102 .
  • the second feed gas may optionally be also introduced into the chemical vapor deposition chamber 102 (step (b)).
  • the step (b) is described later.
  • the chemical vapor deposition chamber 102 is not particularly limited as long as a chemical vapor deposition process can be effected in the chemical vapor deposition chamber 102 .
  • the chemical vapor deposition chamber 102 may be a low-temperature wall-type reactor, a high-temperature wall-type reactor, a single wafer reactor, a multi-wafer reactor, or a deposition system other than these reactors.
  • the flow rate of the first feed gas that is introduced into the chemical vapor deposition chamber 102 is set to 0.1 to 2,000 SCCM using a mass flow controller (hereinafter may be referred to as “MFC”) 204 , for example.
  • MFC mass flow controller
  • the flow rate of the Lewis base that is introduced into the chemical vapor deposition chamber 102 is set using the MFC 205 so that the ratio of the flow rate (SCCM) of the first feed gas to the flow rate (SCCM) of the Lewis base is 0.01 to 100, and preferably 0.05 to 10, for example.
  • the vapor of the first feed gas and the vapor of the Lewis base are fed to the chemical vapor deposition chamber 102 respectively from a first feed gas container 304 and a Lewis base container 305 .
  • first feed gas or the Lewis base When the first feed gas or the Lewis base is in a liquid state, only the vapor of the first feed gas or the Lewis base may be fed to the chemical vapor deposition chamber 102 without using a carrier gas.
  • a carrier gas may be introduced into the first feed gas container 304 or the Lewis base container 305 , and the vapor of the first feed gas or the Lewis base may be fed to the chemical vapor deposition chamber 102 together with the carrier gas.
  • Liquid droplets of the first feed gas or the Lewis base may be dropped onto a heater, and the resulting vapor may be introduced into the chemical vapor deposition chamber 102 (direct injection method).
  • a sublimation gas is introduced into the chemical vapor deposition chamber 102 .
  • the first feed gas forms an Si-containing film on the substrate 103 in the presence of the Lewis base catalyst.
  • the first feed gas and the Lewis base are then removed from the chemical vapor deposition chamber 102 by purging.
  • the pressure inside the chemical vapor deposition chamber 102 is returned to atmospheric pressure using the APC valve 405 , the temperature inside the chemical vapor deposition chamber 102 is returned to room temperature using the temperature control mechanism, and the substrate 103 is removed.
  • the first feed gas is not particularly limited as long as the first feed gas is a gas includes one or more Si—Si bonds.
  • the first feed gas is preferably an oligosilane that includes an Si—Si bond.
  • the oligosilane that includes an Si—Si bond exhibits low reactivity in the absence of the Lewis base, but undergoes a condensation reaction in the presence of the Lewis base (catalyst), and an Si-containing film is formed by the resulting condensate. Since the condensate has fluidity, the condensate enters a recess formed in the substrate, for example, and is gradually polymerized to form an Si-containing film on the wall surface and the bottom surface of the recess.
  • the first feed gas is more preferably a compound represented by the following general formula (1).
  • X is a halogen atom
  • a is a number from 2 to 6
  • b is a number from 0 to 13
  • c is a number from 1 to 14.
  • halogen atom represented by X in the general formula (1) examples include F, Cl, Br, I, and the like. It is preferable that X be Cl.
  • a is a number from 2 to 6, preferably 2 to 5, more preferably 2 to 4, and particularly preferably 2 to 3.
  • b is a number from 0 to 13, preferably 0 to 10, more preferably 0 to 8, and particularly preferably 1 to 6.
  • c is a number from 1 to 14, preferably 1 to 10, more preferably 1 to 8, and particularly preferably 1 to 6.
  • a high temperature that is equal to or higher than 400° C. is normally required to produce a silylene in a liquid phase by means of the decomposition of a compound that includes an Si—Si bond.
  • Production of a silylene in a gas phase has not been known.
  • the compound represented by the general formula (1) can produce a silylene (i.e., chemically active reaction intermediate) at a low temperature in the presence of the Lewis base (catalyst). Since the silylene has high reactivity, an Si-containing film is formed by the polymerization reaction of the first feed gas even at a low temperature.
  • Specific examples of the compound represented by the general formula (1) include hexachlorodisilane, pentachlorodisilane, tetrachlorodisilane, trichlorodisilane, dichlorodisilane, monochlorodisilane, octachlorotrisilane, heptachlorotrisilane, hexachlorotrisilane, pentachlorotrisilane, tetrachlorotrisilane, trichlorotrisilane, dichlorotrisilane, monochlorotrisilane, and the like.
  • HCDS hexadichlorodisilane
  • PCDS pentachlorodisilane
  • pentachlorodisilane is more preferable, due to excellent reactivity.
  • Hexachlorodisilane produces a silylene (reaction intermediate) in a liquid phase in the presence of trimethylamine (i.e., Lewis base) to produce perchloroneopentasilane (Si(SiCl 3 ) 4 ). Since perchloroneopentasilane does not undergo condensation, an Si-containing film (i.e., condensate) cannot be obtained. However, since the method for forming an Si-containing film according to one embodiment of the invention condenses hexachlorodisilane in a gas phase in the presence of the Lewis base catalyst, it is possible to obtain an Si-containing film.
  • Pentachlorodisilane has a reaction rate higher than that of hexachlorodisilane, and can form an Si-containing film at a higher deposition rate. It is considered that this is because a silylene produced by pentachlorodisilane has a reactivity higher than that of a silylene produced by hexachlorodisilane. While hexachlorodisilane produces only Cl 3 Si: as a silylene, pentachlorodisilane produces Cl 2 Si: and HClSi: as a silylene, and HClSi: has high reactivity.
  • a compound obtained by stirring pentachlorodisilane and a tertiary amine at room temperature for 3 hours in diethyl ether was analyzed using a 29 Si NMR (nuclear magnetic resonance) spectrometer.
  • the resulting compound included a condensate that is insoluble in diethyl ether, and a substance that is soluble in diethyl ether.
  • the substance that is soluble in diethyl ether was analyzed, and it was found that SiCl 4 and SiHCl 3 were produced in a ratio of 1:3 when each tertiary amine was used.
  • the above results suggest that two silylenes (Cl 2 Si: and HClSi) were present as reaction intermediates.
  • a silylene instantaneously undergoes a polymerization reaction in the chemical vapor deposition chamber, it is difficult to determine whether or not a silylene was formed after the substrate has been removed from the chemical vapor deposition chamber.
  • a reaction product that has an SiC structure is obtained by introducing a compound that includes a carbon-carbon double bond into the chemical vapor deposition chamber, the presence or absence of a silylene can be determined by detecting the reaction product.
  • the vapor of a compound e.g., dimethyldivinylsilane
  • a compound e.g., dimethyldivinylsilane
  • the gas phase in the chemical vapor deposition chamber is analyzed using an analyzer (e.g., gas chromatograph) to detect a compound that has an SiC structure.
  • a compound e.g., dimethyldivinylsilane
  • the Lewis base functions as a catalyst.
  • the Lewis base is not particularly limited as long as the Lewis base is a compound includes at least one unshared electron pair.
  • the Lewis base is preferably at least one compound selected from the group consisting of a tertiary amine and a heterocyclic amine. When a tertiary amine or a heterocyclic amine is used as the Lewis base, it is possible to reduce a reaction between the first feed gas and the Lewis base as much as possible, and obtain an Si-containing film that has a low nitrogen content and high purity (since almost the entirety of the Lewis base function as a catalyst).
  • the tertiary amine and the heterocyclic amine include 3 to 24 carbon atoms, and more preferably 3 to 15 carbon atoms. Since a tertiary amine and a heterocyclic amine that have the number of carbon atoms within the above range has relatively high vapor pressure, it is possible to easily remove these compounds from the resulting film by purging and/or a reduction in pressure. Therefore, it is possible to reduce a situation in which the resulting Si-containing film is contaminated with carbon, for example.
  • tertiary amine examples include trimethylamine, triethylamine, triethanolamine, N,N-diisopropylethylamine, N,N,N′,N′-tetramethylethylenediamine, N,N,N′,N′-tetramethylpropylenediamine, N,N,N′,N′′,N′′-pentamethyldiethylenetriamine, N,N,N′,N′′,N′′-pentamethyl(3-aminopropyl)ethylenediamine, N,N,N′,N′′,N′′-pentamethyldipropylenetriamine, N,N,N′,N′-tetramethylguanidine, and the like.
  • heterocyclic amine examples include pyrrolidine, piperidine, piperazine, morpholine, quinuclidine, 1,4-diazabicyclo[2.2.2]octane, pyrrole, pyrazole, imidazole, pyridine, pyridazine, pyrimidine, pyrazine, oxazole, thiazole, 4-dimethylaminopyridine, and derivatives thereof.
  • the derivatives include dimethylpyridine, dimethylpyrimidine, methylpyrazine, and the like.
  • the Lewis base be at least one compound selected from the group consisting of trimethylamine, triethylamine, pyridine, pyrimidine, and derivatives thereof.
  • trimethylamine that is gaseous at room temperature is suitably used for the method for forming an Si-containing film according to one embodiment of the invention since the flow rate can be easily controlled using a flow rate control means (e.g., mass flow controller).
  • a flow rate control means e.g., mass flow controller.
  • Triethylamine and pyridine are liquid at room temperature.
  • the vapor of triethylamine and pyridine can be easily fed using a bubbling method since these compounds have relatively high vapor pressure.
  • trimethylamine, triethylamine, and pyridine have a vapor pressure higher than that of an alkylamine having a large number of carbon atoms, it is possible to easily remove these compounds from the resulting film by purging and/or a reduction in pressure.
  • the Lewis base used in this embodiment have an oxygen-containing impurity content of 1 wt % or less.
  • an oxygen-containing impurity content of 1 wt % or less it is possible to reduce contamination with oxygen during deposition, and obtain an Si-containing film having a low oxygen content.
  • a Lewis base having an oxygen-containing impurity content of 1 wt % or less it is possible to implement deposition without impairing fluidity, and obtain a uniform film.
  • the chemical vapor deposition process may be effected at a temperature that is equal to or higher than the melting point of the first feed gas or the melting point of the Lewis base, which ever is higher, and is equal to or lower than the decomposition temperature of the Lewis base.
  • the chemical vapor deposition process is effected in the step (a) at a temperature equal to or higher than the melting point of the first feed gas and the melting point of the Lewis base, these compounds are uniformly mixed in the chemical vapor deposition chamber in a gas phase without solidifying. This ensures that uniform chemical vapor deposition occurs, and a uniform Si-containing film is obtained.
  • pentachlorodisilane melting point: ⁇ 5° C. or less
  • pyridine melting point: ⁇ 42° C.
  • the chemical vapor deposition process may be effected at 0° C. or more.
  • the chemical vapor deposition process When the chemical vapor deposition process is effected at a temperature equal to or lower than the decomposition temperature of the Lewis base, it is possible to prevent a situation in which the Lewis base is decomposed, and an atom included in the Lewis base is incorporated in the Si-containing film, and obtain an Si-containing film having high purity.
  • the chemical vapor deposition process may be effected at a temperature equal to or lower than the decomposition temperature of pyridine. This makes it possible to prevent a situation in which pyridine (Lewis base) is decomposed, and the nitrogen atom included in pyridine is incorporated in the Si-containing film, and obtain an Si-containing film having high purity.
  • the lower limit of the chemical vapor deposition temperature is preferably 0° C. or more, more preferably 5° C. or more, still more preferably 20° C. or more, and particularly preferably 50° C. or more.
  • the upper limit of the chemical vapor deposition temperature is preferably 400° C. or less, more preferably 300° C. or less, still more preferably 250° C. or less, and particularly preferably 200° C. or less.
  • the term “low temperature” used herein refers to a temperature equal to or lower than 400° C.
  • An Si-containing film is normally deposited (formed) by a chemical vapor deposition process at a high temperature that exceeds 400° C., and an SiN film is formed in the presence of a Lewis base such as an amine.
  • the method for forming an Si-containing film according to one embodiment of the invention can form an Si-containing film at a low temperature that is equal to or lower than 400° C. at which it has been previously impossible to form an Si-containing film. It is considered that an Si-containing film can be formed at a low temperature since the Lewis acid functions as a catalyst, and a silylene (intermediate) that has high reactivity is formed.
  • the method for forming an Si-containing film forms an Si-containing film that is characterized in that the total content ratio of a nitrogen atom, a carbon atom, a boron atom, a sulfur atom, and a phosphorus atom derived from the Lewis base in the Si-containing film is 0 to 5%. Since the Lewis base functions as a catalyst at a temperature equal to or lower than the decomposition temperature of the Lewis base, the elements (e.g., nitrogen atom, carbon atom, boron atom, sulfur atom, and phosphorus atom) included in the Lewis base are incorporated in the Si-containing film to only a small extent. Therefore, it is possible to obtain an Si-containing film that has a low content with respect to the elements derived from the Lewis base.
  • the elements e.g., nitrogen atom, carbon atom, boron atom, sulfur atom, and phosphorus atom
  • the content ratio of a nitrogen atom and a carbon atom in the resulting Si-containing film is 5% or less when the Si-containing film is formed at a temperature equal to or lower than the decomposition temperature of the amine.
  • an SiP film is formed when the chemical vapor deposition process is effected at a temperature equal to or higher than the decomposition temperature of trimethylphosphine.
  • an SiB film is formed when the chemical vapor deposition process is effected at a temperature equal to or higher than the decomposition temperature of trimethylboron.
  • the lower limit of the pressure inside the chemical vapor deposition chamber in the step (a) is preferably 0.1 Torr or more, more preferably 1 Torr or more, and particularly preferably 10 Torr or more.
  • the upper limit of the pressure inside the chemical vapor deposition chamber in the step (a) is preferably atmospheric pressure or less, more preferably 300 Torr or less, still more preferably 200 Torr or less, and particularly preferably 100 Torr or more.
  • the pressure inside the chemical vapor deposition chamber in the step (a) is set to 0.1 Torr or more, it is possible to maintain the gas concentration inside the chemical vapor deposition chamber to be equal to or higher than a predetermined concentration, and effect a deposition reaction.
  • the pressure inside the chemical vapor deposition chamber in the step (a) is set to 1 Torr or more, it is possible to increase the deposition rate.
  • the pressure inside the chemical vapor deposition chamber in the step (a) is set to 10 Torr or more, it is possible to further increase the deposition rate.
  • the pressure inside the chemical vapor deposition chamber in the step (a) is set to atmospheric pressure or less, it is possible to easily remove the Lewis base from the chemical vapor deposition chamber by purging and/or a reduction in pressure, and reduce the occurrence of contamination.
  • the pressure inside the chemical vapor deposition chamber in the step (a) is set to 300 Torr or less, it is possible to improve the Lewis base removal efficiency.
  • the pressure inside the chemical vapor deposition chamber in the step (a) is set to 200 Torr or less, it is possible to further improve the Lewis base removal efficiency, and further reduce the occurrence of contamination.
  • the method for forming an Si-containing film according to one embodiment of the invention may further include the step (b) that adds a second feed gas. It is preferable to perform the step (b) after completion of the step (a). Note that the second feed gas may be introduced into the chemical vapor deposition chamber when the step (a) is being performed, or may be introduced into the chemical vapor deposition chamber before the step (a) is performed.
  • the step (b) is performed (i.e., the oxidizing gas is introduced into the chemical vapor deposition chamber) after completion of the step (a) since a silylene may not be formed when the oxidizing gas is present when the step (a) is performed, and an SiO2 film that does not have fluidity may be formed.
  • the second feed gas may be at least one compound selected from the group consisting of a compound that includes at least one (one or more) carbon-carbon unsaturated bond, an inert gas, a reducing gas, an oxidizing gas, and a Lewis base.
  • the compound that includes at least one (one or more) carbon-carbon unsaturated bond is preferably a compound having 2 to 10 carbon atoms.
  • a compound having 2 to 10 carbon atoms is used, there is a tendency that the deposition rate increases due to high vapor pressure.
  • the compound that includes at least one (one or more) carbon-carbon unsaturated bond is also preferably a halogenated hydrocarbon.
  • a halogenated hydrocarbon is introduced into the chemical vapor deposition chamber, it is possible to form an SiC film that does not include an atom (e.g., halogen atom and carbon atom) derived from the Lewis base at a low temperature.
  • the halogenated hydrocarbon is preferably a compound represented by the following general formula (2).
  • X is a halogen atom
  • a is a number from 2 to 9
  • b is a number from 0 to 19
  • c is a number from 1 to 20.
  • halogen atom represented by X in the general formula (2) examples include F, Cl, Br, I, and the like. It is preferable that X be Cl.
  • a, b, and c satisfy the relationship “2a>b+c”.
  • a is a number from 2 to 9, preferably 2 to 8, more preferably 2 to 7, and particularly preferably 2 to 6.
  • b is a number from 0 to 19, preferably 0 to 16, more preferably 0 to 12, and particularly preferably 1 to 10.
  • c is a number from 1 to 20, preferably 1 to 10, more preferably 1 to 8, and particularly preferably 1 to 6.
  • a vinylsilane and a derivative thereof are preferable as the second feed gas.
  • Examples of vinylsilane and a derivative thereof include vinylsilane, chlorovinylsilane, dichlorovinylsilane, trichlorovinylsilane, dimethyldivinylsilane, trimethylvinylsilane, chlorodimethylvinylsilane, diethyldivinylsilane, triethylvinylsilane, and chlorodiethylvinylsilane.
  • an Si film, an SiO 2 film, or an Si-rich oxide film is formed.
  • Examples of the inert gas include He, Ar, Ne, and N 2 .
  • Examples of the reducing gas include H 2 .
  • Examples of the oxidizing gas include O 2 , O 3 , and H 2 O.
  • Examples of the Lewis base include those mentioned above in connection with the step (a).
  • the method for forming an Si-containing film according to one embodiment of the invention may further include the step (c) that performs a treatment in the presence of at least one compound selected from the group consisting of an inert gas, a reducing gas, an oxidizing gas, a nitriding gas, and the Lewis base, and/or the step (d) that applies an energy beam.
  • the step (c) and the step (d) are performed after completion of the step (a) and/or the step (b).
  • step (c) and the step (d) are described below with reference to FIGS. 1 and 3 .
  • the inside of the chemical vapor deposition chamber 102 is purged.
  • the pressure inside the chemical vapor deposition chamber 102 is adjusted to a predetermined pressure by appropriately adjusting the APC valve 405 , and the temperature inside the chemical vapor deposition chamber 102 is adjusted to a predetermined temperature by utilizing the temperature control mechanism (not illustrated in the drawings).
  • At least one compound selected from the group consisting of an inert gas, a reducing gas, an oxidizing gas, a nitriding gas, and a Lewis base is introduced into the chemical vapor deposition chamber 102 , and a treatment is performed.
  • the lower limit of the temperature inside the chemical vapor deposition chamber 102 is preferably 0° C. or more, more preferably 100° C. or more, and particularly preferably 200° C. or more.
  • the upper limit of the temperature inside the chemical vapor deposition chamber 102 is preferably 800° C. or less, more preferably 700° C. or less, still more preferably 600° C. or less, and particularly preferably 400° C. or less.
  • an Si film, an SiO 2 film, or an Si-rich oxide film is formed (i.e., a film that exhibits excellent oxidation resistance can be obtained).
  • a nitriding gas is introduced into the chemical vapor deposition chamber 102 , and a treatment is performed, an SiN film is formed (i.e., a film that exhibits excellent oxidation resistance can be obtained).
  • the inert gas include Ar, N 2 , He, Kr, Ne, and the like.
  • Specific examples of the reducing gas include H 2 , cyclohexadiene, a compound represented by the following formula (3), and a compound represented by the following formula (4).
  • TMS is a trimethylsilyl group.
  • the oxidizing gas include O 2 , O 3 , N 2 O, NO 2 , H 2 O, H 2 O 2 , an NH 4 OH/H 2 O 2 solution, and an HCl/H 2 O 2 solution.
  • the oxidizing gas and the reducing gas are not used at the same time.
  • the nitriding gas include a primary amine such as ammonia, a secondary amine such as diethylamine, and a cyclic amine (excluding a compound that fall under a Lewis base).
  • a primary amine such as ammonia
  • a secondary amine such as diethylamine
  • a cyclic amine excluding a compound that fall under a Lewis base.
  • the Lewis base include those mentioned above in connection with the step (a).
  • the inside of the chemical vapor deposition chamber 102 may be purged, and the step (d) that applies an energy beam to the surface of the resulting Si-containing film may be performed.
  • the Si-containing film can be modified by performing the step (d).
  • a particle beam e.g., ion beam, electron beam, and neutron beam
  • ultraviolet light may be used as the energy beam.
  • step (c) and the step (d) are optionally performed. Both of the step (c) and the step (d) may be performed, or one of the step (c) and the step (d) may be performed.
  • the method for forming an Si-containing film according to one embodiment of the invention When the method for forming an Si-containing film according to one embodiment of the invention is implemented, a condensate of the first feed gas that produced from a silylene (reaction intermediate) flows onto the substrate in a state in which the condensate has fluidity. Therefore, the chemical vapor deposition process performed in the step (a) is suitable for a deposition process that forms an Si-containing film on a substrate that has a recess so that the recess is filled with the Si-containing film.
  • the condensate of the first feed gas flows into the recess formed in the substrate in a state in which the condensate has fluidity so that at least part of the recess is filled with the condensate, and is grown through a further condensation reaction, it is possible to easily obtain a seamless Si-containing film having a small number of voids at a low temperature.
  • the thickness of the Si-containing film formed on the bottom surface of the recess is larger than the thickness of the Si-containing film formed on the side surface of the recess.
  • the thickness of the Si-containing film formed on the bottom surface of the recess is larger by 50% or more than the average thickness of the Si-containing film formed on the side surface of the recess in an area situated higher than the center of the side surface of the recess.
  • the Si-containing film is a fluid film deposition (by flowable CVD) in a state in which the condensate of the first feed gas has fluidity. This makes it possible to obtain a seamless Si-containing film having a small number of voids.
  • the method for forming an Si-containing film may be applied to a substrate having a recess that has an aspect ratio (depth:width) of 1:1 to 20:1.
  • depth:width aspect ratio
  • voids are easily formed, and it is difficult to form a seamless film when a chemical vapor deposition process that does not provide fluidity is used.
  • the method for forming an Si-containing film forms an Si-containing film by means of flowable CVD, even when the substrate has a recess that is long in the depth direction as compared with the width direction, the condensate of the first feed gas flows into the recess formed in the substrate in a state in which the condensate has fluidity so that at least part of the recess is filled with the condensate, and it is possible to obtain a seamless Si-containing film having a small number of voids.
  • PCDS was used as the first feed gas
  • pyridine was used as the Lewis base
  • dimethyldivinylsilane was used as the second feed gas (i.e., a compound that includes a carbon-carbon double bond).
  • a chemical vapor deposition process was performed under the conditions listed below to form a film on a substrate.
  • FIG. 4 illustrates the XPS analysis results for the resulting film.
  • the content ratio of carbon atoms in the resulting film was about 30% (i.e., the film was an SiC film). Since the reactivity of PCDS is low in the chemical vapor deposition chamber at 100° C., PCDS does not react with dimethyldivinylsilane (i.e., an SiC film is not formed) in the absence of a Lewis base. Specifically, since an SiC film was obtained in the presence of a Lewis base, it is obvious that a silylene (active species) was produced as a reaction intermediate, and reacted with dimethyldivinylsilane to form an SiC film. It was thus confirmed that a silylene was produced.
  • FIG. 5 illustrates the XPS analysis results for the resulting film.
  • the resulting film was an Si film having high purity, and the total content ratio of carbon atoms and nitrogen atoms derived from the Lewis base in the Si film was 5% or less.
  • a film was formed in the same manner as in Example 2, except that trimethylboron was used as the Lewis base.
  • the resulting film was an Si film, and the total content ratio of boron atoms derived from the Lewis base in the Si film was 5% or less.
  • a film was formed in the same manner as in Example 2, except that trimethylphosphine was used as the Lewis base.
  • the resulting film was an Si film, and the total content ratio of phosphorus atoms derived from the Lewis base in the Si film was 5% or less.
  • a film was formed in the same manner as in Example 2, except that the pressure inside the chemical vapor deposition chamber in the step (a) was changed to 1 Torr or 10 Torr without changing the deposition time.
  • the resulting films were observed using an SEM.
  • the films were seamless films that were contaminated with the Lewis base to only a small extent.
  • the film obtained in a state in which the pressure inside the chemical vapor deposition chamber was set to 10 Torr had a thickness larger than that of the film obtained in a state in which the pressure inside the chemical vapor deposition chamber was set to 1 Torr. It was thus confirmed that the deposition rate increases when the pressure inside the chemical vapor deposition chamber is set to 10 Torr as compared with the case where the pressure inside the chemical vapor deposition chamber is set to 1 Torr. It was thus confirmed that a seamless film that is contaminated with the Lewis base to only a small extent can be obtained at a high deposition rate when the pressure inside the chemical vapor deposition chamber in the step (a) is set to 1 to 100 Torr.
  • PCDS was used as the first feed gas
  • pyridine was used as the Lewis base.
  • a chemical vapor deposition process was performed under the conditions listed below to form a film on a substrate having a recess.
  • the resulting film was annealed at 400° C. in the presence of oxygen gas (step (c)).
  • FIG. 6 illustrates an SEM photograph of the resulting film.
  • FIG. 7 illustrates the XPS analysis results for the resulting film. Note that the oxygen-containing impurity content in pyridine was 0.01 wt %.
  • the upper left photograph is a photograph of the Si-containing film deposited in the entire recess
  • the upper right photograph is an enlarged photograph of the upper part of the opening of the recess (indicated by A in FIG. 6 )
  • the lower left photograph is an enlarged photograph of the side surface of the recess (indicated by B in FIG. 6 )
  • the lower right photograph is an enlarged photograph of the bottom surface of the recess (indicated by C in FIG. 6 ).
  • the following were confirmed from the SEM photographs illustrated in FIG. 6 .
  • an SiO 2 film having a low impurity content was formed by annealing performed in the presence of oxygen gas. It is considered that a fluid Si film was formed in the step (a), and an SiO 2 film was formed by the treatment in the presence of oxygen gas, since the oxygen-containing impurity content in the Lewis base was 0.01 wt %.
  • a film was formed in the same manner as in Example 3, except that triethylamine was used as the Lewis base. The same results as those illustrated in FIGS. 6 and 7 were obtained. Specifically, it was confirmed that a fluid film was deposited as illustrated in FIG. 6 (SEM photographs). When the film obtained by performing the step (c) was analyzed by XPS, it was confirmed that an SiO 2 film having a low impurity content was obtained. The oxygen-containing impurity content in triethylamine was 0.01 wt %.
  • PCDS was used as the first feed gas
  • pyridine was used as the Lewis base
  • isoprene was used as the second feed gas.
  • a chemical vapor deposition process was performed under the conditions listed below to form a film on a substrate.
  • FIG. 8 illustrates the XPS analysis results for the resulting film.
  • an SiC film was as the Si-containing film. It is considered that a silylene derived from PCDS was produced at 100° C., and polymerized with isoprene to form an SiC film.
  • the invention includes various other configurations substantially the same as the configurations described above in connection with the embodiments (e.g., a configuration having the same function, method, and results, or a configuration having the same objective and results).
  • the invention also includes a configuration in which an unsubstantial element described above in connection with the embodiments is replaced by another element.
  • the invention also includes a configuration having the same effects as those of the configurations described above in connection with the embodiments, or a configuration capable of achieving the same objective as that of the configurations described above in connection with the embodiments.
  • the invention further includes a configuration in which a known technique is added to the configurations described above in connection with the embodiments.
  • 101 CVD device
  • 102 chemical vapor deposition chamber
  • 103 substrate
  • 200 , 201 , 202 , 203 gas pipe
  • 204 , 205 , 206 mass flow controller
  • 301 , 302 nitrogen gas container
  • 303 second feed gas container
  • 304 first feed gas container
  • 305 Lewis base container
  • 401 , 402 , 403 , 404 valve
  • 405 APC valve

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
  • Formation Of Insulating Films (AREA)
US16/486,258 2017-02-16 2018-02-13 METHOD FOR FORMING Si-CONTAINING FILM Abandoned US20190376187A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-026860 2017-02-16
JP2017026860A JP7061432B2 (ja) 2017-02-16 2017-02-16 Ｓｉ含有膜の成膜方法
PCT/EP2018/053571 WO2018149830A1 (en) 2017-02-16 2018-02-13 METHOD FOR FORMING Si-CONTAINING FILM

Publications (1)

Publication Number Publication Date
US20190376187A1 true US20190376187A1 (en) 2019-12-12

Family

ID=61231251

Family Applications (1)

Application Number Title Priority Date Filing Date
US16/486,258 Abandoned US20190376187A1 (en) 2017-02-16 2018-02-13 METHOD FOR FORMING Si-CONTAINING FILM

Country Status (7)

Country Link
US (1) US20190376187A1 (zh)
JP (1) JP7061432B2 (zh)
KR (1) KR20190118599A (zh)
CN (1) CN110291223A (zh)
SG (1) SG11201906685UA (zh)
TW (1) TW201835375A (zh)
WO (1) WO2018149830A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11117807B2 (en) * 2017-06-23 2021-09-14 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Method of making aluminum-free neopentasilane
US11268190B2 (en) * 2015-06-16 2022-03-08 Versum Materials Us, Llc Processes for depositing silicon-containing films using halidosilane compounds
US11643724B2 (en) * 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
WO2024200977A1 (fr) * 2023-03-31 2024-10-03 Safran Ceramics Procede de formation d'un revetement par depot chimique en phase vapeur

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2822970B2 (ja) 1996-01-31 1998-11-11 日本電気株式会社 炭化硅素薄膜の形成方法
US7205187B2 (en) * 2005-01-18 2007-04-17 Tokyo Electron Limited Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
FR2887252A1 (fr) * 2005-06-21 2006-12-22 Air Liquide Procede de formation d'un film dielectrique et nouveaux precurseurs pour la mise en oeuvre de ce procede
US20080179715A1 (en) * 2007-01-30 2008-07-31 Micron Technology, Inc. Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device
US7867923B2 (en) * 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7943531B2 (en) 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
JP2012031012A (ja) 2010-07-30 2012-02-16 Seiko Epson Corp 立方晶炭化珪素膜の製造方法
US9443736B2 (en) * 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
EP2875166B1 (en) * 2012-07-20 2018-04-11 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
JP2013179332A (ja) 2013-04-26 2013-09-09 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP6456764B2 (ja) * 2015-04-28 2019-01-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11268190B2 (en) * 2015-06-16 2022-03-08 Versum Materials Us, Llc Processes for depositing silicon-containing films using halidosilane compounds
US11913112B2 (en) 2015-06-16 2024-02-27 Versum Materials Us, Llc Processes for depositing silicon-containing films using halidosilane compounds and compositions
US11117807B2 (en) * 2017-06-23 2021-09-14 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Method of making aluminum-free neopentasilane
US11643724B2 (en) * 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
WO2024200977A1 (fr) * 2023-03-31 2024-10-03 Safran Ceramics Procede de formation d'un revetement par depot chimique en phase vapeur
FR3147295A1 (fr) * 2023-03-31 2024-10-04 Safran Ceramics Procédé de formation d'un revêtement par dépôt chimique en phase vapeur

Also Published As

Publication number Publication date
TW201835375A (zh) 2018-10-01
SG11201906685UA (en) 2019-08-27
WO2018149830A1 (en) 2018-08-23
KR20190118599A (ko) 2019-10-18
JP2018131661A (ja) 2018-08-23
JP7061432B2 (ja) 2022-04-28
CN110291223A (zh) 2019-09-27

Similar Documents

Publication Publication Date Title
US10186420B2 (en) Formation of silicon-containing thin films
US11996284B2 (en) Formation of SiOCN thin films
JP6827457B2 (ja) Ｓｉ含有膜形成組成物およびその使用方法
JP6437962B2 (ja) １３族金属又は半金属の窒化物膜の堆積方法
US20190376187A1 (en) METHOD FOR FORMING Si-CONTAINING FILM
JP2021061414A (ja) 低温でのＳｉＮの蒸着用Ｓｉ前駆体
EP3277696B1 (en) Method for the deposition of boron containing films
JP2018150627A (ja) モリブデン含有皮膜の堆積のためのビス（アルキルイミド）−ビス（アルキルアミド）モリブデン分子
US20060228888A1 (en) Atomic layer deposition of high k metal silicates
TWI655308B (zh) 沉積鈦鋁薄膜的製程
KR20160062700A (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 컴퓨터 프로그램
JP2007526399A (ja) 絶縁膜または金属膜を形成する方法
US10023462B2 (en) Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films
JP2020133002A (ja) 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法
TWI784098B (zh) 用於氣相沈積含鈦膜的形成含鈦膜之組成物
KR20240008929A (ko) 안정한 비스(알킬-아렌) 전이 금속 착물 및 이를 사용한 필름 증착 방법
TW201526109A (zh) 循環沈積製程
US20140322924A1 (en) Silicon containing compounds for ald deposition of metal silicate films
US20220037144A1 (en) Methods for making silicon and nitrogen containing films
WO2017203775A1 (ja) 薄膜形成用原料及び薄膜の製造方法
WO2018088078A1 (ja) 化合物、薄膜形成用原料、原子層堆積法用の薄膜形成用原料及び薄膜の製造方法
CN113169070A (zh) 在550℃或更高的温度下使用ALD沉积含Si膜的前体和工艺
US20240327982A1 (en) Method for an amorphous boron nitride layer and associated amorphous boron nitride layers
US20060198958A1 (en) Methods for producing silicon nitride films by vapor-phase growth
TW202419661A (zh) 用於選擇性沉積的高純度炔基胺

Legal Events

Date Code Title Description
STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION