US20180066159A1 - Siloxane polymer compositions and their use - Google Patents

Siloxane polymer compositions and their use Download PDF

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US20180066159A1
US20180066159A1 US15/557,620 US201615557620A US2018066159A1 US 20180066159 A1 US20180066159 A1 US 20180066159A1 US 201615557620 A US201615557620 A US 201615557620A US 2018066159 A1 US2018066159 A1 US 2018066159A1
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silane
triethoxysilyl
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Ari Karkkainen
Milja Hannu-Kuure
Admir Hadzic
Jarkko Leivo
Henna JARVITALO
Rauna-Leena KUVAJA
Graeme Gordon
Matti PESONEN
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
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    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings

Definitions

  • the present invention relates to siloxane polymer compositions.
  • the invention relates to siloxane polymer compositions which have suitable properties for use in a lithographic fabrication processes.
  • the invention also relates to synthesis, polymerization and cross-linking of such compositions.
  • Display and semiconductor devices are constructed of multiple coating layers and patterned layers applied on substrate(s) or other coating layers to deliver specific functions in the device.
  • the coating layers are typically deposited by sputtering, chemical vapour deposition, electron beam and by other physical vapour deposition techniques or the coating layers are deposited from a liquid phase using a number of different liquid phase coating methods. These layers will typically undergo patterning steps by lithography and wet or dry etching or other subtractive or additive processes to produce the final desired coating, patterns and structures on a substrate.
  • the liquid phase materials are typically directly patterned by lithography process, or by other additive patterning techniques.
  • the liquid phase deposited coating layers are typically either thermally cured or cured by a combined UV and thermal treatment. While running the physical vapour deposition processes, the coating layers (and substrate) are subject to elevated temperatures during the coating process. In addition, when the multilayer stacks are manufactured, the substrate and the coating layers will undergo multiple heat cycles and will be exposed to various chemical etch solutions during the manufacturing process.
  • the coating layers have to have sufficient chemical resistivity against the aggressive etch solutions, deliver good thermal and environmental stability, non-yellowing characteristics and high optical quality. In addition, the coating layers have to have good compatibility in terms of adhesion and to have sufficient hardness.
  • the manufacturers are constantly pushing towards higher integration on device level and designing more and more advanced form factors, which sets further challenges and process limitations for the coating layers. One significant requirement to meet is to deliver same performance at low cure temperature.
  • the present invention concerns a siloxane polymer composition obtainable by
  • the present invention concerns use of the siloxane polymer composition according to the present invention in a process for manufacture of a display or a semiconductor device.
  • the present invention concerns a method for covering a substrate, the method including
  • the present invention concerns a composition including at least four different silane monomers and at least one bi-silane, wherein at least one of the silane monomers or the bi-silane includes an active group capable of achieving cross-linking, upon thermal or radiation initiation, and a solvent.
  • FIG. 1 illustrates a cross-section of a an exemplary display device structure wherein multiple coating layers are used to deliver specific functions
  • FIGS. 2-4 illustrate a cross-section of exemplary sensor structures.
  • the invention of the present disclosure concerns a method for producing a siloxane polymer, the method including
  • the conditions conducive to further cross-linking of the siloxane polymer are formed, for example, by thermal or radiation initiation or a combination thereof.
  • the present invention concerns a siloxane polymer composition obtainable by
  • At least one of the silane monomers or the bi-silane must include an active group which is capable of achieving cross-linking to adjacent siloxane polymer chains upon a thermal or radiation initiation.
  • active groups are epoxy, vinyl, allyl and methacrylate groups.
  • Exemplary thermal initiation is subjecting the mixture to a radical initiator.
  • Exemplary radical initiators are tert-amyl peroxybenzoate, 4,4-azobis(4-cyanovaleric acid), 1,1′-azobis(cyclohexanecarbonitrile), benzoyl peroxide, 2,2-bis(tert-butylperoxy)butane, 1,1-bis(tert-butylperoxy)cyclohexane, 2,2′-azobisisobutyronitrile (AIBN), 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane, 2,5-bis(tert-Butylperoxy)-2,5-dimethyl-3-hexyne, bis(1-(tert-butylperoxy)-1-methylethyl)benzene, 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane, tert-butyl hydroperoxide,
  • the radical initiator is AIBN.
  • the temperature of the cross-linking is in the range of about 30 to 200° C., typically cross-linking is carried out at refluxing conditions of the solvent.
  • Exemplary radiation initiation is subjecting the mixture to UV light.
  • Radical initiators and photoacid/base generators can be used as UV initiators.
  • examples of such initiators include Ircacure 819, 184, 651, 907, 1173, 2022, 2100, Rhodorsil 2074 and Cyracure UVI-6976, Irgacure PAG 103, 121, 203, 250, 290 and CGI 725, 1907 and GSID26-1, OXE-1, OXE-2, TPO, TPS and the like.
  • sensitizers can be used in combination with the initiators to further accelerate the polymerization, by providing effective energy transfer to the UV polymerization initiators.
  • sensitizers include UVS-1331, UVS-1101, UVS-1221, 2,4-diethyl-9H-thioxanthen-9-one, and the like.
  • the synthesis of the siloxane polymer is carried out in two steps.
  • the monomers are hydrolysed in a first solvent in presence of catalyst.
  • a catalyst is formed by an acid or mixture thereof.
  • An example of catalysts is an aqueous acid e.g. nitric acid or hydrochloric acid or another mineral or organic acid.
  • the polymerization step the molecular weight of the material is increased by condensation polymerization.
  • the water used in the hydrolysis step has typically a pH of less than 7, preferably less than 6, in particular less than 5.
  • the subjecting the mixture to an acid treatment includes refluxing.
  • a typical refluxing time is 2 h.
  • the monomers are condensation polymerized to achieve the final siloxane polymer composition.
  • the other functional groups (depending on the number of hydrolysable group number) of the precursor molecules can be organic functionalities such as linear, alkyl, alkene, aryl, cyclic, aliphatic groups.
  • organic groups methyl group, ethyl group, propyl group, butyl group, octyl group, decyl group and the like can be used.
  • the alkyl group preferably includes 1 to 10 carbon atoms.
  • the alkyl group may be either linear or branched.
  • a hydrogen atom in the organic group may be replaced by a fluorine atom or similar.
  • Further examples include optionally substituted phenyl group, naphthyl group, hydroxyphenyl, phenanthrene, methylphenyl group, ethylphenyl group, chlorophenyl group, bromophenyl group, fluorophenyl group, diphenyl group, thioxanthone.
  • At least one of the organic groups contain reactive functional groups e.g. amine, epoxy, acryloxy, allyl, methacryl or vinyl groups. These reactive organic groups can react during the thermal or radiation initiated curing step.
  • Thermal and radiation sensitive initiators can be used to achieve specific curing properties from the material composition. When using the radiation sensitive initiators the material can perform as a negative tone photosensitive material in the lithography process.
  • the method of the present invention includes admixing at least one bi-silane and at least four silane monomers according to formulas I, II, III and IV:
  • R 1 , R 2 , R 3 and R 4 are independently selected from hydrogen and a group comprising linear and branched alkyl, cycloalkyl, alkenyl, alkynyl, (alk)acrylate, epoxy, allyl, vinyl and alkoxy and aryl having 1 to 6 rings, and wherein the group is substituted or unsubstituted;
  • X is a hydrolysable group or a hydrocarbon residue;
  • a, b, c and d is an integer 1 to 3.
  • the hydrolysable group is in particular an alkoxy group (cf. formula V).
  • the present invention provides for the production of organosiloxane polymers using tri- or tetraalkoxysilane.
  • the alkoxy groups of the silane can be identical or different and preferably selected from the group of radicals having the formula
  • R 5 stands for a linear or branched alkyl group having 1 to 10, preferably 1 to 6 carbon atoms, and optionally exhibiting one or two substituents selected from the group of halogen, hydroxyl, vinyl, epoxy and allyl.
  • Particularly suitable monomers are selected from the group of triethoxysilane, tetraethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, ethyltriethoxysilane, n-butyltriethoxysilane, methyldiethoxyvinylsilane, dimethyldiethoxysilane, phenyltrimethoxysilane, phenantrene-9-triethoxysilane, vinyltrimethoxysilane, 3-glysidoxypropyltrimethoxysilane, aminopropyltrimethoxysilane, methacryloxypropyltrimethoxysilane, methacryloxypropyltriethoxysilane, acryloxypropyltrimethoxysilane, allyltrimethoxysilane, epoxycyclohexylethyltrimethoxysilane, diphenylsilanediol, 1,2-bis(tri
  • the method of the present invention includes admixing at least one bi-silane with other monomer(s), for example monomers of the above kind (formulas I to IV).
  • the bi-silane is selected from molecules corresponding to formula VI:
  • alkyl residue stands for 1 to 10, preferably 1 to 8, or 1 to 6 or even 1 to 4 carbon atoms, examples include ethylene and methylene and propylene.
  • “Arylene” stands for an aromatic bivalent group containing typically 1 to 3 aromatic rings, and 6 to 18 carbon atoms. Such groups are exemplified by phenylene (e.g. 1,4-phenylene and 1,3-phenylene groups) and biphenylene groups as well as naphthylene or anthracenylene groups.
  • alkylene and arylene groups can optionally be substituted with 1 to 5 substituents selected from hydroxy, halo, vinyl, epoxy and allyl groups as well as alkyl, aryl and aralkyl groups.
  • Preferred alkoxy groups contain 1 to 4 carbon atoms. Examples are methoxy and ethoxy.
  • phenyl includes substituted phenyls such as phenyltrialkoxy, in particular phenyltrimethoxy or triethoxy, and perfluorophenyl.
  • phenyltrialkoxy in particular phenyltrimethoxy or triethoxy
  • perfluorophenyl perfluorophenyl.
  • the phenyl as well as other aromatic or alicyclic groups can be coupled directly to a silicon atom or they can be coupled to a silicon atom via a methylene or ethylene bridge.
  • Exemplary bi-silanes include 1,2-bis(trimethoxysilyl)methane, 1,2-bis(triethoxysilyl)methane, 1,2-bis(trimethoxysilyl)ethane, 1,2-bis(triethoxysilyl)ethane, 1-(dimethoxymethylsilyl)-1-(trimethoxysilyl)methane, 1-(diethoxymethylsilyl)-1-(triethoxysilyl)methane, 1-(dimethoxymethylsilyl)-2-(trimethoxysilyl)ethane, 1-(diethoxymethylsilyl)-2-(triethoxysilyl)ethane, bis(dimethoxymethylsilyl)methane, bis(diethoxymethylsilyl)methane, 1,2-bis(dimethoxymethylsilyl)ethane, 1,2-bis(diethoxymethylsilyl)ethane, 1,2-bis(trimethoxysilyl)benzene, 1,
  • bi-silane is used for designating a compound comprising two organic residues, in particular silicon containing residues, which are linked to the same atom(s).
  • the term “bis-silane” is also used.
  • the silane monomers are selected from methyltriethoxysilane, phenyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, diphenylsilanediol, and glycidoxypropyltrimethoxysilane, and the bis-silane is selected from 1,2-bis(triethoxysilyl)ethane, and 1,2-bis(trimethoxysilyl)methane.
  • At least one of the monomers used for hydrolysis and condensation is selected from monomers having formulas I or II, wherein at least one substituent is an active group capable of achieving cross-linking to adjacent siloxane polymer chains upon a thermal or radiation initiated curing step.
  • the molar portion of units derived from monomers of the above kind is about 0.1 to 70%, preferably about 0.5 to 50%, in particular about 1 to 40%.
  • the active group will be present in a concentration of about 1 to 35% based on the molar portion of monomers.
  • bi-silane or bis-silane molar amount between 1-50%, preferably between 3-35%.
  • At least one of the at least four different silane monomers comprises one or more reactive functional groups which are capable of achieving further cross-linking of the siloxane polymer under initiation by a photo or thermal initiator compound.
  • two or more polymers are separately produced and admixed to form the aimed composition.
  • all but one or two monomers are polymerized in suitable liquid to form a first polymer and the remaining monomer or monomers are separately polymerized to form a second polymer and the two polymers are then mixed to form the final polymer composition.
  • the first polymer makes up the majority of the final polymer composition.
  • the first and the second polymers are mixed at a polymer weight ratio of 1.1:1 to 100:1, in particular 1.5:1 to 50:1, for example 2:1 to 15:1. In the below examples, the ratios are in the range of 2.5:1 to 7.5:1.
  • one embodiment for producing a siloxane polymer composition comprises the steps of
  • the second polymer is obtained by polymerizing at least one monomer containing an active group, in particular an active group capable of achieving cross-linking to adjacent siloxane polymer chains upon a thermal or radiation initiation.
  • the active group can be any of the above discussed, in particular it is selected from epoxy, vinyl, allyl and methacrylate groups and combinations thereof.
  • the first polymer contains the bi-silane monomer.
  • the method for producing a siloxane polymer is performed in a first solvent.
  • suitable solvents are, for example, acetone, tetrahydrofuran (THF), toluene, 2-propanol, methanol, ethanol, propylene glycol propyl ether, methyl-tert-butylether (MTBE), propylene glycol monomethylether acetate (PGMEA), methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethylether (PGME) and propylene glycol propyl ether (PnP).
  • the method further includes changing the first solvent to a second solvent.
  • the solvent change is done after the treatment with acid.
  • the first solvent is preferably selected from acetone, 2-propanol, 1-propanol, methyl ethyl ketone, methyl isobutyl ketone, 1-methoxy-2-propanol or PGMEA
  • the second solvent is preferably selected from 1-methoxy-2-propanol, methyl ethyl ketone, PGMEA or PnP or methyl isobutyl ketone, cyclopentatone or mixtures thereof.
  • the solvent change is advantageous, since it assists the removal of water and alcohols formed during hydrolysis of the silane monomers. In addition, it improves the properties of the final siloxane polymer solution when used as coating layer(s) on substrate.
  • the polymerization is carried out separately for each polymer as explained above in liquid phase and optionally followed by solvent exchanged.
  • solvent exchange is carried out such that the first solvents for the production of the first and the second polymers are changed for the same second solvent.
  • the siloxane polymer prepared according to the method of the present invention is partially cross-linked.
  • the term “partially cross-linked” means that the polymer is capable of further cross-linking at conditions conducive to cross-linking.
  • the polymer still contains at least some reactive, cross-linking groups after the first polymerisation step. The further cross-linking will be described below.
  • the molecular weight range of the siloxane polymer which is partially cross-linked is in the range of 1500 to 35,000, preferably about 2,000 to 30,000, in particular about 4,000 to 25,000 g/mol.
  • the polymer molecular weight can be adjusted to make it suitable for use with a specific developer in a lithographic patterning process.
  • the method further comprising admixing nanoparticles (or similar nano-, or microscale rods, crystals, spheres, dots, buds etc.) to the polymer compositions.
  • the nanoparticles are in particular selected from the group of light scattering pigments, organic and inorganic phosphors, oxides, quantum dots or metals.
  • the above mentioned dopants can improve coating material mechanical, chemical or physical properties or provide added functionality for the layer.
  • the siloxane polymer is partially cross-linked during polymerization, in particular during or immediately after condensation polymerization.
  • Various methods can be used for achieving cross-linking.
  • cross-linking method where two chains are joined via reactive groups not affecting any of the active groups intended for the UV photolithography can be employed.
  • hydrosilylation for example using a proton on one chain reacting with a double bond on another chain will achieve cross-linking of desired kind.
  • Another example is cross-linking through double bonds.
  • Different active groups are preferably used for cross-linking and for photolithography.
  • the cross-linking of the siloxane polymer can be achieved with an active group having double bonds, such as a vinyl or allyl or methacrylate group using radical initiators.
  • Epoxy groups can be employed for UV-lithography. And visa versa.
  • the proportion of active groups required for cross-linking is generally smaller than for UV lithography, e.g. about 0.1 to 10 mol %, based on the monomers, for cross-linking and about 5 to 35 mol %, based on the monomers, for UV lithography.
  • the amount of the initiator added to the reaction mixture/solution is generally about 0.1 to 10%, preferably about 0.5 to 5%, calculated from the mass of the siloxane polymer.
  • the molecular weight will typically be 2- to 10-folded.
  • the cross-linking will increase it to 4,000 or more, preferably to 4,000 or higher (4,000-30,000 g/mol).
  • the excess of water is preferably removed from the material and at this stage it is possible to make a solvent exchange to another synthesis solvent if desired.
  • This other synthesis solvent may function as the final or one of the final processing solvents of the siloxane polymer.
  • the residual water and alcohols and other by-products may be removed after the further condensation step is finalized.
  • Additional processing solvent(s) may be added during the formulation step to form the final processing solvent combination. Additives such as thermal initiators, radiation sensitive initiators, sensitizers, surfactants and other additives may be added prior to final filtration of the siloxane polymer. After the formulation of the composition, the polymer is ready for processing in, for example, a lithographic process.
  • the concentration/content of the group capable of being deprotonated e.g. an OH-group
  • any residual leaving groups from the silane precursors e.g. alkoxy groups
  • the concentration/content of the group capable of being deprotonated e.g. an OH-group
  • any residual leaving groups from the silane precursors e.g. alkoxy groups
  • the molecular weight of the polymer greatly affects dissolution of the siloxane polymer material into the aqueous based developer solution.
  • the molecular weight of the polymer also greatly effects on the dissolution properties of the siloxane polymer into developer solutions.
  • the final siloxane polymer when the final siloxane polymer has a high content of hydroxyl groups remaining and a low content of alkoxy (e.g. ethoxy) groups, the final siloxane polymer can be dissolved into an alkaline-water developer solution (e.g. tetra methyl ammonium hydroxide; TMAH, or potassium hydroxide; KOH), sodium carbonate (Na 2 CO 3 ) and potassium carbonate (K 2 CO 3 ).
  • an alkaline-water developer solution e.g. tetra methyl ammonium hydroxide; TMAH, or potassium hydroxide; KOH
  • sodium carbonate Na 2 CO 3
  • potassium carbonate K 2 CO 3
  • the final siloxane polymer has a very low solubility in an alkaline-water developer of the above kind.
  • the OH-groups or other functional groups such as amino (NH 2 ), thiol (SH), carboxyl, phenol or similar that result in solubility to the alkaline developer systems, can be attached directly to the silicon atoms of the siloxane polymer backbone or optionally attached to organic functionalities attached into the siloxane polymer backbone to further facilitate and control the alkaline developer solubility.
  • the siloxane polymer composition can be diluted using a proper solvent or solvent combination to give a solid content which in film deposition will yield the pre-selected film thickness.
  • an initiator molecule compound is added to the siloxane composition after synthesis.
  • the initiator which can be optionally similar to the one added during polymerization, is used for creating a species that can initiate the polymerization of the “active” functional group in the UV curing step.
  • cationic or anionic initiators can be used in case of an epoxy group.
  • radical initiators can be employed in case of a group with double bonds as “active” functional group in the synthesized material.
  • thermal initiators working according to the radical, cationic or anionic mechanism
  • the choice of a proper combination of the photoinitiators and sensitizers also depends on the used exposure source (wavelength). Furthermore the selection of the used sensitizer depends on the selected initiator type.
  • the concentration of the thermal or radiation initiator and sensitizers in the composition is generally about 0.1 to 10%, preferably about 0.5 to 5%, calculated from the mass of the siloxane polymer.
  • the composition as described above may comprise solid nanoparticles in an amount of between 1 and 50 wt-% of the composition.
  • the nanoparticles (or similar nano-, or microscale rods, crystals, spheres, dots, buds etc.) are in particular selected from the group of light scattering pigments, organic and inorganic phosphors, oxides, quantum dots or metals.
  • the present invention concerns a method for covering a substrate, the method including
  • the deposited siloxane polymer composition forms a film, in particular a thin film on the substrate, in particular the surface of the substrate.
  • the solvent is evaporated and the film dried, preferably by thermal drying. This step is also referred to as pre-curing.
  • the film is cured to final hardness by increasing the temperature.
  • the pre-curing and the final curing steps are combined by carrying out heating by using an increasing heating gradient.
  • the method further includes developing the deposited film.
  • developing comprises exposing (full area or selective exposure using photomask or reticle or laser direct imaging) the deposited siloxane polymer composition to UV light.
  • the step of developing is typically carried out after any pre-curing step and before a final curing step.
  • the method comprises
  • Exemplary epoxy-functional group containing monomers include (3-glycidoxypropyl)trimethoxysilane, 1-(2-(Trimethoxysilyl)ethyl)cyclohexane-3,4-epoxide, (3-glycidoxypropyl)triethoxysilane, (3-glycidoxypropyl)tripropoxysilane, 3-glycidoxypropyltri(2-methoxyethoxy)silane, 2,3-epoxypropyltriethoxysilane, 3,4-epoxybutyltriethoxysilane, 4,5-epoxypentyltriethoxysilane, 5,6-epoxyhexyltriethoxysilane, 5,6-epoxyhexyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrime
  • the method further includes curing the siloxane polymer composition.
  • the thickness of the siloxane polymer composition on the substrate may range e.g. from 5 nm to 30 ⁇ m or higher.
  • Thin films can be deposited on a substrate by using slot coating, combined slot+spin coating, spin coating, spray coating, ink-jet printing, curtain coating, roller, roll-to-roll, printing (to mention few typical liquid phase deposition methods).
  • the siloxane polymer composition can be deposited by directly patterning by a lithography process (or other patterning method e.g. gravure, printing, 3D/4D printing, laser direct imaging).
  • a film produced according to the invention typically has a dielectric constant of 3.0-5.0 or below at a frequency of 100 kHz.
  • the index of refraction lies between 1.2 to 1.9 at a wavelength of 633 nm.
  • the films exhibit a cross-linking degree of 70% or more at a UV dose of 50-200 mJ/cm 2 at I-line or g-,h-,i-line or broadband wavelength of mercury UV source or similar used in the industry.
  • the final coating film thickness has to be optimized according for each device and structure fabrication process.
  • materials are provided which are suitable for produce films and structures.
  • the layers can be deposited on various substrate surfaces, such as glass, quartz, silicon, silicon nitride, polymers, metals and plastics.
  • the materials can be deposited on number of different surfaces such as different oxides, doped oxides, semimetals and the like.
  • the resolution in the lithography process is improved to the extent that it is better than 5 ⁇ m, preferably better than 3 ⁇ m (for thin films with a thickness of less than about 5 ⁇ m or even 4 ⁇ m).
  • the aspect ratio is also improved: Siloxane polymer compositions according to the invention can be employed for making patterns exhibiting aspect ratios of smaller than 1:1 or even preferably smaller than 1:2.
  • the layers can be obtained by conventional and cost-efficient processing from the liquid phase.
  • processing methods include spin-on, dip, spray, ink-jet, roll-to-roll, gravure, flexo-graphic, curtain, screen printing coating methods, extrusion coating and slit coating, but are not limited to these.
  • the patterning of the thermally and/or irradiation sensitive material compositions can be performed via direct lithographic patterning, conventional lithographic masking and etching procedure, imprinting and embossing, but are not limited to these.
  • compositions can be used for making layers which are cured at relatively low processing temperatures, e.g. at temperatures of max 300° C. or even at temperature of 80° C. and in the range between these limits.
  • the layers formed from the compositions can also be cured at higher temperatures, i.e. temperatures over 230 and up to 400° C.
  • the films or structures produced from the compositions can be combined with a subsequent high temperature deposition step, such as sputtering, firing, thermal evaporation and/or a CVD process.
  • the material is usually cured in convection oven, by IR-lamp curing, or forced air cure between 80° C. and 300° C.
  • the processing temperature is limited to max 150° C. or even to temperatures below 120° C. or even to temperatures below 80° C.
  • Typical curing time can be example 30 min at temperature.
  • the material layer composition should deliver properties such as sufficient chemical resistivity against the aggressive etch solutions, good thermal and environmental stability, non-yellowing characteristics and high optical quality, good compatibility in terms of adhesion, sufficient hardness at the low final cure temperature (final cure temperature can be below 150° C. or below 120° C. or even below 80° C.).
  • final cure temperature can be below 150° C. or below 120° C. or even below 80° C.
  • the material can be of course used at higher final cure temperatures (e.g. 200° C., 230° C. or higher), but it is specifically designed to deliver performance also at the low temperature.
  • the layers deposited from the compositions and cured as explained can perform as a planarization layer on a substrate or electronic device which may have cavities/via's and/or protruding structures on top of it.
  • This substrate may be part of a display device (e.g. liquid crystal display or OLED display or sensor or color filter or cover substrate).
  • the material composition can function as optical and/or hard coating layer(s) in display devices (such as LCD or OLED display), solar cell, solar module, LED, semiconductor devices or on substrates part of an illumination device, flexible/printed/foldable/wearable electronics device.
  • display devices such as LCD or OLED display
  • solar cell solar cell
  • solar module solar module
  • LED semiconductor devices or on substrates part of an illumination device
  • flexible/printed/foldable/wearable electronics device flexible/printed/foldable/wearable electronics device.
  • compositions for making insulating layers on a substrate or in an electronic component can also function simultaneously as a planarization layer on a substrate or in an electronic device.
  • This substrate and/or electronic device (such as a thin film transistor or sensor or color filter or cover substrate) can be part of a display device (e.g. liquid crystal display or OLED display).
  • FIG. 1 represents an exemplary display device cross-section structure, wherein multiple material layers made of a siloxane polymer composition of the present invention are used to deliver specific functions.
  • LCD/OLED substrate (100) consists the actual display (LCD or OLED) with optionally a colour filter array integrated on it e.g. as a separate glass substrate.
  • the substrate material in general can be various types of glass (optionally chemically or thermally tempered), quartz, plastic, polymer or metal.
  • the substrate has typically one or two or more conductive (or semi-conductive) materials deposited and structured on its surface.
  • the conductive (or semi-conductive) layers can for example be made of transparent conductive oxide (or doped oxide) layer or layers and/or metal layer or layers.
  • the transparent conductive oxide can be example indium-tin-oxide (ITO) and typically is a patterned layer on the substrate surface.
  • the transparent conductive oxide or doped oxide layers can be formed by sputtering, CVD or PVD processes.
  • the metal layer can be a sputtered or PVD deposited metal (example Aluminium and Molybdenum).
  • the conductive layer can also be formed using materials and methods such as wire mesh (e.g. copper), metal-mesh (e.g. copper, aluminium and silver), silver (or similar) “nanowires”, carbon nanotubes/nanobuds, conductive polymers (example PEDOT), graphene and ITO or similar conductive inks (e.g. nanoparticles dispersed in solvent or other matrix).
  • wire mesh e.g. copper
  • metal-mesh e.g. copper, aluminium and silver
  • silver or similar
  • nanowires e.g. copper, aluminium and silver
  • carbon nanotubes/nanobuds e.g. carbon nanotubes/nanobuds
  • conductive polymers e.g. graphene and ITO or similar conductive inks (e.g. nanoparticles dispersed in solvent or other matrix).
  • FIG. 2 illustrates the cross-section of an exemplary sensor structure (layers shown not in scale in thickness or relative to each other).
  • the substrate in the below example can be ( 300 ), ( 200 ) or ( 100 ) or combination of one or more depending on the approach chose to construct the device.
  • the senor of FIG. 2 is put together in the following way:
  • FIG. 3 illustrates a cross-section of an exemplary sensor structure wherein an optional material layer 3 ( 310 ) is used on a Substrate ( 300 ) in the sensor structure (layers shown not in scale in thickness or relative to each other).
  • the substrate in the below example can be ( 300 ), ( 200 ) or ( 100 ) or combination of one or more depending on the approach chose to construct the device.
  • the senor of FIG. 3 is put together in the following way:
  • FIG. 4 illustrates a cross-section of an exemplary sensor wherein optional material layer 3 ( 310 ) is used on a Substrate ( 300 ) in the sensor structure. Furthermore, the picture illustrates the usage of the optional individual layers 301 , 302 and 303 on opposite side the substrate 300 (layers shown not in scale in thickness or relative to each other).
  • the substrate in the below example can be ( 300 ), ( 200 ) or ( 100 ) or combination of one or more depending on the approach chose to construct the device.
  • the senor of FIG. 4 is put together the following way
  • the material layer fulfill several requirements. Firstly, the material layer has good adhesion (requirement 4B-5B; ASTM D3359-09, Cross-Hatch tester) on multiple surfaces, e.g., on a substrate (e.g. glass or plastic), on any other polymer material (such as the black matrix material or white matrix material) and on conductive layers such as ITO and metals (molybdenum/aluminium/molybdenum).
  • a substrate e.g. glass or plastic
  • any other polymer material such as the black matrix material or white matrix material
  • conductive layers such as ITO and metals (molybdenum/aluminium/molybdenum).
  • the material layer has good chemical resistivity against the wet etch chemicals, developers, solvents and strippers.
  • the chemical resistivity is verified typically again by adhesion test after chemical resistivity test (requirement 4B-5B; before and after; ASTM D3359-09, Cross-Hatch tester).
  • the wet etchants are used during the lithographic patterning process steps of the conductive layers or other polymer layers. These etchants and strippers include KOH, potassium hydroxide (0.04%-7%); Aqua regia (HNO 3 :HCl, typically in 1:3 ratio; 3.0N-9.0N); NaOH, (3-6%); TMAH, (0.2% 3%); Metal etchant [typical for Mo/Al/Mo; H 3 PO 4 :HNO 3 :CH 3 COOH, e.g.
  • the wet etch solutions are used at various temperatures (20° C.-80° C.) and at different concentrations depending on the actual layers to be etched and other layers already deposited on the substrate.
  • the material layer has good hardness (preferably over 4H or even over 6H; ASTM D3363-00, Elcometer tester).
  • the processing temperature is limited to max 150° C. or even to temperatures below 120° C. Typical curing time can be example 30 min at temperature.
  • the material layer composition has to deliver all above properties at the low final cure temperature.
  • the material can be of course used at higher final cure temperatures (e.g. 200° C. or 230° C. or higher), but it is specifically designed to deliver performance also at the low temperature.
  • Methyltriethoxysilane (203.4 g), phenyltrimethoxysilane (19.4 g), 3-methacryloxypropyltrimethoxysilane (13.5 g), glycidoxypropyltrimethoxysilane (138.9 g), 1,2-bis(triethoxysilyl)ethane (77.1 g) and acetone (405 g) were placed in a round bottom flask.
  • 0.1 M aqueous HNO3 115.8 g was added, and the resulting mixture was refluxed for 2 h at 95° C.
  • Solvent was changed from acetone to PGME.
  • AIBN (3.6 g) was added, and the mixture was refluxed at 105° C.
  • Phenyltrimethoxysilane (8.08 g), methyltriethoxysilane (77 g), methacryloxypropyltrimethoxysilane (5.61 g), 3-glysidoxypropyltrimethoxysilane (57.83 g) and 1,2-bis(triethoxysilyl)ethane (48.2 g) were weighed to a round bottom flask.
  • 2,4-diethyl-9H-thioxanthen-9-one (1.96 g) was weighed to the round bottom flask.
  • 196 g of acetone was added to the round bottom flask.
  • Phenyltrimethoxysilane (11.31 g), methyltriethoxysilane (107.8 g), methacryloxypropyltrimethoxysilane (7.85 g), 3-glycidoxypropyltrimethoxysilane (80.96 g) and 1,2-bis(triethoxysilyl)ethane (67.48 g) were weighed to a round bottom flask.
  • 2-isopropyl-9H-thioxanthen-9-one, mixture of 2- and 4 isomers (2.74 g) was weighed to the round bottom flask. 278 g of acetone was added to the round bottom flask.
  • Phenyltrimethoxysilane (11.31 g), methyltriethoxysilane (107.8 g), methacryloxypropyltrimethoxysilane (7.85 g), 3-glycidoxypropyl-trimethoxysilane (80.96 g) and 1,2-bis(triethoxysilyl)ethane (67.48 g) were weighed to a round bottom flask.
  • 1-chloro-4-propoxy-9H-thioxanthen-9-one (2.74 g) was weighed to the round bottom flask. 278 g of acetone was added to the round bottom flask.
  • Diphenylsilanediol 13.72 g
  • phenyltrimethoxysilane 11.31 g
  • methyltriethoxysilane 107.8 g
  • methacryloxypropyltrimethoxysilane 7.85 g
  • 3-glycidoxypropyl-trimethoxysilane 80.96 g
  • 1,2-bis(triethoxysilyl)ethane 67.48 g
  • Solvent was changed from acetone to PGME (141 g added). After solvent exchange AIBN (2.31 g) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 80 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1331 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (Mw) of 9600.
  • Phenyltrimethoxysilane (11.31 g), methyltriethoxysilane (107.8 g), methacryloxypropyltrimethoxysilane (7.86 g), 3-glycidoxypropyl-trimethoxysilane (80.96 g), 1,2-bis(triethoxysilyl)ethane (44.98 g) and 1,2-bis(trimethoxysilyl)ethane (17.15 g) were weighed to a round bottom flask. 268.8 g of acetone was added to the round bottom flask. 74.92 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (72.45 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (48.2 g) and 1,2-Bis(trimethoxysilyl)ethane (7.35 g) were weighed to a round bottom flask. 199.5 g of acetone was added to the round bottom flask. 54.9 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (72.45 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (48.2 g) and 1,2-Bis(trimethoxysilyl)ethane (9.35 g) were weighed to a round bottom flask. 199.5 g of acetone was added to the round bottom flask. 54.9 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (77.02 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (35.98 g) and 1,2-Bis(trimethoxysilyl)ethane (9.3 g) were weighed to a round bottom flask. 193.8 g of acetone was added to the round bottom flask. 51.73 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (77.02 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (35.98 g) and 1,2-Bis(trimethoxysilyl)ethane (9.3 g) were weighed to a round bottom flask. 193.8 g of acetone was added to the round bottom flask. 51.73 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (77 g), Methacryloxypropyltriethoxysilane (9.19 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g) and 1,2-Bis(triethoxysilyl)ethane (48.18 g) were weighed to a round bottom flask. 196.7 g of acetone was added to the round bottom flask. 53.49 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. for 2 hours. Solvent was changed from acetone to PGME (104 g added).
  • Phenyltrimethoxysilane (11.31 g), methyltriethoxysilane (107.83 g), methacryloxypropyltrimethoxysilane (7.85 g), 3-glycidoxypropyl-trimethoxysilane (80.96 g) and 1,2-bis(triethoxysilyl)ethane (67.48 g) were weighed to a round bottom flask. 268.8 g of acetone was added to the round bottom flask. 74.92 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. for 2 hours.
  • Solvent was changed from acetone to methyl isobutyl ketone (MIBK) (143 g added). After solvent exchange AIBN (2.26 g) was added to the material and the material solution was refluxed at 105° C. for 50 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1331 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (Mw) of 10000.
  • MIBK methyl isobutyl ketone
  • Phenyltrimethoxysilane (28.3 g), methyltriethoxysilane (296.6 g), methacryloxypropyltrimethoxysilane (19.7 g), 3-glycidoxypropyl-trimethoxysilane (202.6 g) and 1,2-bis(triethoxysilyl)ethane (112.4 g) were weighed to round bottom flask. 659 g of acetone was added to the reactor. 179 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (379 g added).
  • Phenyltrimethoxysilane (28.3 g), methyltriethoxysilane (296.6 g), methacryloxypropyltrimethoxysilane (19.7 g), 3-glycidoxypropyl-trimethoxysilane (202.6 g) and 1,2-bis(triethoxysilyl)ethane (112.4 g) were weighed to round bottom flask. 659 g of acetone was added to the reactor. 179 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (379 g added).
  • Phenyltrimethoxysilane (28.3 g), methyltriethoxysilane (296.6 g), methacryloxypropyltrimethoxysilane (19.7 g), 3-glycidoxypropyl-trimethoxysilane (202.6 g) and 1,2-bis(triethoxysilyl)ethane (112.4 g) were weighed to round bottom flask. 659 g of acetone was added to the reactor. 179 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (379 g added).
  • Phenyltrimethoxysilane (8.08 g), methyltriethoxysilane (72.45 g), methacryloxypropyltrimethoxysilane (5.62 g), 3-glycidoxypropyl-trimethoxysilane (57.83 g), 1,2-bis(triethoxysilyl)ethane (48.21 g) and 1-(2-(trimethoxysilyl)ethyl)cyclohexane-3,4-epoxide (6.69 g) were weighed to a round bottom flask. 198.88 g of acetone was added to the round bottom flask.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (77.0 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glycidoxypropyl-trimethoxysilane (57.83 g) and 1,2-Bis(trimethoxysilyl)ethane (36.75 g) were weighed to a round bottom flask. 185.0 g of acetone was added to the round bottom flask. 53.49 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (104 g added).
  • Phenyltrimethoxysilane (8.08 g), methyltriethoxysilane (75.5 g), methacryloxypropyltrimethoxysilane (5.62 g), 3-glycidoxypropyl-trimethoxysilane (57.83 g), 1,2-bis(triethoxysilyl)ethane (48.2 g) and 1H, 1H, 2H, 2H-Perfluorodecyltrimethoxysilane (5.15 g) were weighed to a round bottom flask. 200.38 g of acetone was added to the round bottom flask.
  • Phenyltrimethoxysilane (4.48 g), tetraethoxysilane (17.43 g), dimethyldimethoxysilane (5.03 g), methyltriethoxysilane (50.0 g), methacryloxypropyltrimethoxysilane (5.19 g), 3-glycidoxypropyl-trimethoxysilane (53.4 g) and 1,2-bis(triethoxysilyl)ethane (80.13 g) were weighed to a round bottom flask. 215.66 g of acetone was added to the round bottom flask. 59.59 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (4.41 g), methyltriethoxysilane (70 g), glycidylmethacrylate (2.93 g), 3-glycidoxypropyltrimethoxysilane (52.56 g) and 1,2-bis(triethoxysilyl)ethane (49.65 g) were weighed to a round bottom flask. 179.55 g of acetone was added to a round bottom flask. 46.21 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (102 g added).
  • Phenyltrimethoxysilane (32.26 g), Methyltriethoxysilane (54.05 g), Methacryloxypropyltrimethoxysilane (5.61 g), 3-glysidoxypropyl-trimethoxysilane (57.74 g) and 1,2-Bis(triethoxysilyl)ethane (32.08 g) were weighed to a round bottom flask. 192 g of acetone was added to the round bottom flask. 48.77 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours.
  • Solvent was changed from acetone to PGME (94 g added). After solvent exchange AIBN (1.72 g) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 85 min. After reflux the solid content was adjusted to 18% by adding PGME:MEK (methyl ethyl ketone) so that ratio of solvents is 90:10 respectively. PAG290 (1% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1331 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (Mw) of 7000.
  • Substrate pre-clean (Substrate can contain ITO, metal, glass, black matrix or white matrix or polymer surface exposed to the coating layer): Potassium hydroxide (KOH) pre-clean (the KOH solution can be at room temperature or temperature can be varied between 20° C.-55° C.; typical concentration can be varied from 0.04% to 1%) followed by deionized water rinse followed by a drying process.
  • KOH Potassium hydroxide
  • adhesion promoters, primers or other chemical or physical surface modification methods can be used to improve wetting and adhesion.
  • Coating material is deposited on a substrate by using slot coating, combined slot+spin coating, spin coating, spray coating, ink-jet printing, curtain coating, roller, roll-to-roll, printing (to mention few typical liquid phase deposition methods).
  • the formulation solvent(s)+additives) is adjusted the way that a proper coating thickness, uniformity and planarization/conformality (to mention few typical requirements) of the coating are achieved.
  • Vacuum dry and/or pre-bake After deposition the substrate is transferred to a vacuum dry station and/or pre-bake on a hot-plate (or oven) usually at 70-120° C. for 1-3 minutes. In this step major portion of the formulation solvent is removed and substrate is left with a pre cured (dry or slightly tacky) film ready for further processing.
  • Exposure in a standard photolithography process, a photomask or reticle is used with broadband, g-,h-,i-line or i-line exposure. Typical UV exposure dose required is 50-200 mj (or above) by using g-,h-,i-line exposure. In case no patterning is required for the deposited layer or the patterning is done by other means a full substrate area exposure can be used (without using any photomask or reticle). It is also possible to use so called wait step or post exposure bake step to improve exposed region curing.
  • the material described in the current invention functions as a negative tone resist meaning the areas what are exposed polymerize under UV light (making the exposed areas less soluble to a developer).
  • development in the development step the more soluble regions of the film (see above) are dissolved by the developer solution. The less soluble regions (exposed areas in case of negative tone material) remain on the substrate after development. So called spray development or a buddle development methods can be used.
  • the developer solvent can be at room temperature or temperature can be varied between 20-55° C.
  • Typical developers include potassium hydroxide (KOH) and tetra methyl ammonium hydroxide (TMAH), but is not limited to these. Typical concentrations are e.g. 0.04%-0.7% for KOH and 0.2%-2.38% for TMAH.
  • KOH potassium hydroxide
  • TMAH tetra methyl ammonium hydroxide
  • the application of the developer solution is followed by a deionized or standard water rinse spray or buddle. As a final step, water is dried off by air knife/blow and/or heating (blow or IR-cure, hot-plate or oven).
  • Final cure depending on the used substrate and other coating material layers the material is cured in convection oven, by IR-lamp cure, forced air cure at 80-300° C. Also specifically in a cases where the material layer is deposited directly on a substrate, which is already attached to the display substrate the processing temperature is limited to max 150° C. or even to temperatures below 120° C. Typical curing time can be example 30 min at temperature.
  • the material layer composition has to deliver all above properties at the low final cure temperature.
  • the material can be used at higher final cure temperatures (e.g. 200° C. or 230° C. or higher), but it is specifically designed to deliver performance also at the low temperature.
  • Example 2 Substrate pre-clean Spray clean KOH and Spray clean KOH and Spray clean KOH and Spray clean KOH and Deionized water Deionized water Deionized water Deionized water Coating method Spin coating Spin coating Spin coating Pre-cure (Hotplate) 120° C. 60 s 100° C. 60 s 100° C. 60 s 100° C. 60 s Exposure (mJ; g-: h- 200 mJ 200 mJ 200 mJ 200 mJ 200 mJ and i-line) Post Exposure Bake 120° C.
  • Pre-cure 120° C. 60 s 100° C. 60 s 100° C. 60 s 100° C. 60 s 100° C. 60 s 100° C. 60 s Exposure (mJ; g-: h- 200 mJ 200 mJ 200 mJ 200 mJ and i-line) Post Exposure Bake 120° C.
  • “Methyltriethoxysilane (84.7 g), Phenyltrimethoxysilane (8.08 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glycidoxypropyltrimethoxysilane (57.89 g), 1,2-Bis(triethoxysilyl)ethane (32.11 g) were weighed to a round bottom flask. 188 g of acetone was added to the round bottom flask. 51.57 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. oil bath for 2 hours. Solvent was changed from acetone to PGME (109 g added).
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (77.02 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (35.98 g) and 1,2-Bis(trimethoxysilyl)ethane (9.3 g) were weighed to a round bottom flask. 193.8 g of acetone was added to the round bottom flask. 51.73 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (77.02 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (35.98 g) and 1,2-Bis(trimethoxysilyl)ethane (9.3 g) were weighed to a round bottom flask. 193.8 g of acetone was added to the round bottom flask. 51.73 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C.
  • Dimethyldiethoxysilane (18.72 g), Phenylmethyldimethoxysilane (4.46 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-glycidoxypropyl-trimethoxysilane (31.9 g), 1,2-Bis(triethoxysilyl)ethane (17.7 g) were weighed to a round bottom flask. 75.98 g of acetone was added to the round bottom flask. 18.81 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Methyltriethoxysilane 42.49 gPhenylmethyldimethoxysilane (4.56 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-Glycidoxypropyl)methyldimethoxysilane (31.9 g), 1,2-Bis(triethoxysilyl)ethane (17.7 g) were weighed to a round bottom flask. 100 g of acetone was added to the round bottom flask. 27.9 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Methyltriethoxysilane (42.35 g), Phenyltrimethoxysilane (4.01 g), Methacryloxypropyltrimethoxysilane (2.79 g), 3-Glycidoxypropyl)methyldimethoxysilane (28.71 g), 1,2-Bis(triethoxysilyl)methane (15.32 g) were weighed to a round bottom flask. 93 g of acetone was added to the round bottom flask. 26.71 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Dimethyldiethoxysilane (20.57 g), Phenyltrimethoxysilane (4.45 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-glycidoxypropyl-trimethoxysilane (31.9 g), 1,2-Bis(triethoxysilyl)ethane (17.7 g) were weighed to a round bottom flask. 77.73 g of acetone was added to the round bottom flask. 17.01 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Methyltriethoxysilane (23.98 g), Phenyltrimethoxysilane (4.45 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-Glycidoxypropyl)methyldimethoxysilane (29.71 g), 1,2-Bis(triethoxysilyl)ethane (17.7 g) were weighed to a round bottom flask. 78.79 g of acetone was added to the round bottom flask. 19.98 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Dimethyldiethoxysilane (18.72 g), Phenylmethyldimethoxysilane (4.56 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-Glycidoxypropyl)methyldimethoxysilane (31.9 g), 1,2-Bis(triethoxysilyl)ethane (17.7 g) were weighed to a round bottom flask. 79 g of acetone was added to the round bottom flask. 18.81 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • n-Octyltrimethoxysilane 42.35 g
  • Phenyltrimethoxysilane (4.04 g)
  • Methacryloxypropyltrimethoxysilane (2.81 g)
  • 3-Glycidoxypropyl)methyldimethoxysilane 28.94 g
  • 1,2-Bis(triethoxysilyl)methane (16.05 g) were weighed to a round bottom flask.
  • 94 g of acetone was added to the round bottom flask.
  • 26.78 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours.
  • Solvent was changed from acetone to PGME (60 g added). After solvent exchange AIBN (2.3 m % out of the siloxane polymer solids) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 180 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), UVI6976 (2% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1101 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (M w ) of 9741.
  • Methyltriethoxysilane (17.8 g), Phenylmethyldimethoxysilane (4.1 g), Methacryloxypropyltrimethoxysilane (2.79 g), 3-Glycidoxypropyl)methyldimethoxysilane (26.76 g), 1,2-Bis(triethoxysilyl)methane (16.05 g) were weighed to a round bottom flask. 67.5 g of acetone was added to the round bottom flask. 16.32 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Methyltriethoxysilane (46.7 g), Phenyltrimethoxysilane (4.45 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-Glycidoxypropyl)methyldimethoxysilane (29.74 g), 1,2-Bis(triethoxysilyl)methane (17.7 g) were weighed to a round bottom flask. 101.69 g of acetone was added to the round bottom flask. 27.27 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Methyltriethoxysilane (36.77 g), Phenylmethyldimethoxysilane (4.1 g), Methacryloxypropyltrimethoxysilane (2.79 g), 3-Glycidoxypropyl)methyldimethoxysilane (26,76 g), 1,2-Bis(triethoxysilyl)methane (16.05 g) were weighed to a round bottom flask. 86.47 g of acetone was added to the round bottom flask. 24.04 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours.
  • Solvent was changed from acetone to PGME (50 g added). After solvent exchange AIBN (1.4 m % out of the siloxane polymer solids) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 150 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), UVI6976 (2% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1101 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (M w ) of 6738.
  • Methyltriethoxysilane (46.7 g), Phenyltrimethoxysilane (4.45 g), Methacryloxypropyltrimethoxysilane (3.1 g), 3-Glycidoxypropyl)methyldimethoxysilane (29.74 g), 1,2-Bis(triethoxysilyl)methane (17.7 g) were weighed to a round bottom flask. 101.69 g of acetone was added to the round bottom flask. 27.27 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours. Solvent was changed from acetone to PGME (50 g added).
  • Solutions 1 and 2 were mixed at a ratio of 5:1 and the solids content of the material was adjusted to process formulation and filtrated to obtain a process ready solution.
  • Diphenylsilanediol 36.77 g
  • Phenylmethyldimethoxysilane 4.1 g
  • Methacryloxypropyltrimethoxysilane 2.79 g
  • 3-Glycidoxypropyl)methyldimethoxysilane 26.76 g
  • 1,2-Bis(triethoxysilyl)methane 16.05 g
  • Solvent was changed from acetone to PGME (50 g added). After solvent exchange AIBN (1.8 m % out of the siloxane polymer solids) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 150 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), UVI6976 (2% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1101 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (M w ) of 7800.
  • Solutions 1 and 2 were mixed at a ratio of 4:1 and the solid content of the material was adjusted to process formulation and filtrated to obtain a process ready solution.
  • n-Hexyltrimethoxysilane (51.79 g), Phenyltrimethoxysilane (4.04 g), Methacryloxypropyltrimethoxysilane (2.81 g), 3-Glycidoxypropyl)methyldimethoxysilane (28.94 g), 1,2-Bis(triethoxysilyl)methane (16.05 g) were weighed to a round bottom flask. 103.6 g of acetone was added to the round bottom flask. 26.78 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours.
  • Solvent was changed from acetone to PGME (50 g added). After solvent exchange AIBN (1.7 m % out of the siloxane polymer solids) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 180 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), UVI6976 (2% of solid polymer mass), BYK3700 (1% of solid polymer mass) and UVS1101 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (M w ) of 5920.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (72.45 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (48.2 g) were weighed to a round bottom flask. 199.5 g of acetone was added to the round bottom flask. 51.0 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours.
  • Solvent was changed from acetone to cyclopentanone (109 g added). After solvent exchange AIBN (1.52 g) was added to the material and the material solution was refluxed at 105° C. in an oil bath for 60 min. After reflux the solid content was adjusted to 25% by adding cyclopentanone. PAG290 (1% of solid polymer mass), BYK3700 (1% of solid polymer mass), UVI6976 (1% of solid polymer mass) and UVS1331 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (Mw) of 8900.
  • Phenyltrimethoxysilane (8.08 g), Methyltriethoxysilane (72.45 g), Methacryloxypropyltrimethoxysilane (5.62 g), 3-glysidoxypropyl-trimethoxysilane (57.83 g), 1,2-Bis(triethoxysilyl)ethane (48.2 g) were weighed to a round bottom flask. 199.5 g of acetone was added to the round bottom flask. 51.0 g of water (0.1 M HNO3) was added to the reaction flask and the reaction mixture was refluxed at 95° C. in an oil bath for 2 hours.
  • Solvent was changed from acetone to cyclopentanone (109 g added). After solvent exchange AIBN (1.52 g) was added to the material and the material solution was refluxed at 85° C. in an oil bath for 90 min. After reflux the solid content was adjusted to 25% by adding PGMEA. PAG290 (1% of solid polymer mass), BYK3700 (1% of solid polymer mass), UVI6976 (1% of solid polymer mass) and UVS1331 (0.25% of solid polymer mass) were added to material. After final filtration the solution is ready to use for processing. The material had a molecular weight (Mw) of 10050.
  • Mw molecular weight
  • Clause 1 A method of producing a siloxane polymer composition, the method comprising steps of
  • the coating prepared using the siloxane polymer composition of the present invention are useful for lithographic fabrication processes, in particular in connection with the manufacture of displays and semiconductor devices.
  • the present siloxane polymer compositions are significantly harder than the coating prepared by using the siloxane polymer of prior art (up to 8H vs 4H of that of WO2009/068755).
  • Tests also showed that the adhesion of the material to various surfaces was better, and the chemical resistance was significantly improved.
  • One additional significant improvement, what is highlighted in the table is that the polymer compositions of the present invention do not require so called post exposure bake step in the lithography process.

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US20210171718A1 (en) * 2017-12-01 2021-06-10 Merck Patent Gmbh Polysiloxane, composition comprising the same and cured film using the same
US11866553B2 (en) * 2017-12-01 2024-01-09 Merck Patent Gmbh Polysiloxane, composition comprising the same and cured film using the same
WO2019193258A1 (en) * 2018-04-06 2019-10-10 Optitune Oy Flexible and foldable abrasion resistant photopatternable siloxane hard coat
CN112236493A (zh) * 2018-04-06 2021-01-15 欧提腾股份有限公司 柔性和可折叠的耐磨可光致图案化硅氧烷硬涂层
US20210230434A1 (en) * 2018-05-09 2021-07-29 Canatu Oy Electrically conductive multilayer film
US11760071B2 (en) * 2018-05-09 2023-09-19 Canatu Oy Electrically conductive multilayer film
US20230384684A1 (en) * 2020-09-29 2023-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removing resistor layer, and method of manufacturing semiconductor

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SG11201707505QA (en) 2017-10-30
US20220010172A1 (en) 2022-01-13
TW201700548A (zh) 2017-01-01
US11634610B2 (en) 2023-04-25
KR20230131955A (ko) 2023-09-14
CN107636097A (zh) 2018-01-26
KR20170128438A (ko) 2017-11-22
AU2016232011B2 (en) 2020-07-09
TWI692492B (zh) 2020-05-01
PH12017501675A1 (en) 2018-03-12
CN107636097B (zh) 2024-03-15
JP2018509510A (ja) 2018-04-05

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