US20130087539A1 - Method and Device for Forming Solder Deposits - Google Patents

Method and Device for Forming Solder Deposits Download PDF

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Publication number
US20130087539A1
US20130087539A1 US13/641,497 US201113641497A US2013087539A1 US 20130087539 A1 US20130087539 A1 US 20130087539A1 US 201113641497 A US201113641497 A US 201113641497A US 2013087539 A1 US2013087539 A1 US 2013087539A1
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Prior art keywords
solder material
material layer
substrate
contact
solder
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Abandoned
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US13/641,497
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English (en)
Inventor
Ghassem Azdasht
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Pac Tech Packaging Technologies GmbH
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Pac Tech Packaging Technologies GmbH
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Assigned to PAC TECH - PACKAGING TECHNOLOGIES GMBH reassignment PAC TECH - PACKAGING TECHNOLOGIES GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AZDASHT, GHASSEM
Publication of US20130087539A1 publication Critical patent/US20130087539A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11002—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for supporting the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/11003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the bump preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H01L2224/11822—Applying permanent coating, e.g. in-situ coating by dipping, e.g. in a solder bath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER

Definitions

  • the present invention relates to a method as well as a device for forming solder deposits on elevated contact metallizations of terminal faces of a substrate in particular formed as a semiconductor component, in which wetting surfaces of the contact metallizations are brought into physical contact with a solder material layer arranged on a solder material carrier, at least for the duration of the physical contact a heating of the contact metallizations of the substrate and a tempering of the solder material layer takes place, and subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.
  • the semiconductor components are regularly equipped with elevated contact metallizations (bumps), which on their surface comprise a solder deposit in order to establish an electrically conductive and mechanically durable connection of the semiconductor components with the contact substrates by melting the solder deposits.
  • elevated contact metallizations herein provide an exposed configuration of the joints defined by the solder deposits.
  • solder deposits on the contact metallizations can be done in different ways. For example, it is known to galvanically apply solder deposits, wherein the use of this method requires an adequate masking of the surface of the semiconductor component, such that the known method is correspondingly intricate. It is also known to apply solder deposits onto elevated contact metallizations via sputtering, wherein said method also requires a laborious masking of the surface of the semiconductor component.
  • a method proves less laborious in which the contact metallizations with their wetting surfaces are dipped in molten solder material, which after removal of the contact metallizations from the solder material bath forms the intended solder material deposits by solidification.
  • the present invention has the object of proposing a method and a device which enable forming solder deposits on elevated contact metallizations of terminal faces of a substrate with a diminished scrap risk.
  • wetting surfaces of the contact metallizations of the substrate are brought into physical contact with a solder material layer arranged on a solder material carrier, wherein at least for the duration of the physical contact a heating of the contact metallizations of the substrate and a tempering of the solder material layer takes place, and subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.
  • creating the protective medium atmosphere can be achieved with the least possible effort.
  • the substrate is accommodated in a handling device, which at the same time serves the purpose of applying laser energy to the substrate, such that one and the same handling device can be used for forming the solder deposits on the contact metallizations as well as for a subsequent contacting of the substrate provided with the solder deposits to a contact substrate.
  • the same heating device particularly the laser device which is used for forming the solder deposits, can also be used for performing the contacting process. Further it is possible to leave the solder deposits in a molten state right after their formation in order to be able to energy-efficiently perform a subsequent contacting without having to re-melt the solder deposits.
  • the tempering of the solder material layer is performed via a temperable carrier platform accommodating the solder material layer it is possible to optimize the solder material layer on the one hand and the carrier platform on the other hand in terms of their different functions instead of forming the solder material carrier so as to ensure not only the provisioning function for the solder material layer, but also the tempering function as it would be the case if the solder material carrier were simultaneously used for the tempering. Notwithstanding this, it is of course also conceivable to form a carrier platform which on the one hand is temperable and on the other hand comprises a special surface or surface coating which is advantageous for the provision of the solder material layer.
  • the solder material carrier can be formed with a layer of a fluid or pasty solder material or of solder material molded bodies, wherein in particular in the latter case it is advantageous if the solder material molded bodies have a diameter which is smaller than the distance between the contact metallizations of the substrate in order to preclude that due to a simultaneous contact between a solder material molded body and two neighboring contact metallizations a formation of a contact bridge can occur.
  • the device according to the invention comprises an accommodating device for accommodating the substrate, a heating device for heating the substrate and a carrier platform for providing a solder material layer disposed on a solder material carrier, wherein the carrier platform is equipped with a tempering device for tempering the solder material layer and a feeding device serving the purpose of performing an approach and a retreat motion, such that the formation of a physical contact between elevated contact metallizations of the substrate and the solder material layer with subsequent separation of the physical contact is made possible.
  • the accommodating device is formed by a handling device which is equipped with a laser device for applying laser energy to the substrate.
  • the handling device can serve the purpose of performing the approach and retreat motion; however, it is also particularly advantageous if the carrier platform is equipped with a feeding device for performing the approach and retreat motion.
  • a particularly compact embodiment of the device is made possible if the carrier platform is also formed as a tempering device.
  • the tempering device is formed independent of the carrier platform, since thereby the possibility is basically given to combine different tempering devices with one and the same carrier platform.
  • FIG. 1 shows a device for forming solder deposits in a feeding phase
  • FIG. 2 shows a device for forming solder deposits in a wetting phase
  • FIG. 3 shows the device for forming solder deposits in a solidifying phase.
  • FIG. 1 shows a device 10 for forming solder deposits with a handling device 11 and a carrier platform 12 arranged below the handling device 11 , the carrier platform 12 serving the purpose of accommodating a solder material carrier 13 on whose surface 14 a solder material layer 15 is disposed which in the case of the embodiment shown in FIG. 1 is formed from a pasty solder material mass.
  • solder material layer 15 in the present case is covered by a flux coating 16 for protection against its environment.
  • the handling device 11 comprises a lower mouthpiece formed as an accommodating device 17 with an abutting surface 18 which is formed by a frame-like opening edge and serves the purpose of supporting a substrate 19 which is held at the mouthpiece 17 by applying negative pressure and which is here formed as a semiconductor component.
  • the handling device 11 is equipped with a negative pressure device not illustrated here, which applies a corresponding negative pressure force 32 to a rear side 20 of the semiconductor component, such that the rear side 20 rests fixed against an abutting surface 18 .
  • the semiconductor component 19 is a chip which comprises on its contact side 21 opposite of its rear side 20 a terminal face array 22 on whose individual terminal faces 23 respectively one elevated contact metallization 24 , in technical terms also called bump, is formed.
  • the configuration of the device 10 for forming solder deposits shown in FIG. 1 shows the handling device 11 , arranged above the carrier platform 12 , in a feeding phase in which the semiconductor component 19 is moved towards the carrier platform 12 by an approach motion 25 of the mouthpiece 17 .
  • energy can be applied to the rear side of the semiconductor component 19 , which leads to a heating of the semiconductor component 19 .
  • the energy applied to the semiconductor component 19 is laser energy 33 .
  • FIG. 2 shows the device 10 for forming solder deposits in a wetting phase following the feeding phase, in which wetting surfaces 26 of the contact metallizations 24 are in physical contact with the solder material layer 15 and therein are protected from their environment by the flux coating 16 .
  • the cooling of the solder material layer 15 taking place during the heating of the semiconductor component 19 has the effect that a melting of the solder material layer 15 only occurs in the contact areas between the wetting surfaces 26 and the solder material layer 15 and that in the areas of the solder material layer 15 that are disposed opposite of spaces between the contact metallizations 29 melting does not occur or at least a lower degree of liquefaction of the solder material layer 15 occurs in comparison to the areas opposite of the wetting surfaces 26 .
  • FIG. 3 shows a solidifying phase following the wetting phase illustrated in FIG. 2 .
  • said solidifying phase the contact metallizations 24 are brought out of contact with the solder material layer 15 by a retreat motion 30 and on the wetting surfaces 26 of the contact metallizations 24 solder material menisci, which have formed as a result of the wetting, form solder deposits 34 .
  • the liquid state of the solder deposits 34 can be maintained or the solder deposits can be brought into a solid state.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
US13/641,497 2010-04-16 2011-04-13 Method and Device for Forming Solder Deposits Abandoned US20130087539A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010015520A DE102010015520A1 (de) 2010-04-16 2010-04-16 Verfahren und Vorrichtung zur Ausbildung von Lotdepots
DE102010015520.9 2010-04-16
PCT/DE2011/000394 WO2011127907A2 (de) 2010-04-16 2011-04-13 Verfahren und vorrichtung zur ausbildung von lotdepots

Related Parent Applications (1)

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PCT/DE2011/000394 A-371-Of-International WO2011127907A2 (de) 2010-04-16 2011-04-13 Verfahren und vorrichtung zur ausbildung von lotdepots

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US15/658,084 Division US10118240B2 (en) 2010-04-16 2017-07-24 Method for forming solder deposits

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US15/658,084 Active US10118240B2 (en) 2010-04-16 2017-07-24 Method for forming solder deposits

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EP (1) EP2559061B1 (de)
DE (1) DE102010015520A1 (de)
WO (1) WO2011127907A2 (de)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621147A (ja) * 1992-06-30 1994-01-28 Matsushita Electric Ind Co Ltd 電子部品の実装方法
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
US6394158B1 (en) * 1997-11-20 2002-05-28 Pac Tech Packaging Technologies Gmbh Method and device for thermally bonding connecting surfaces of two substrates
US6713714B1 (en) * 1999-01-18 2004-03-30 Pac Tech-Packaging Technologies Gmbh Method and device for thermally connecting the contact surfaces of two substrates
US20070119618A1 (en) * 2005-11-25 2007-05-31 Yuji Nishitani Wiring board, electronic component mounting structure, and electronic component mounting method
US20080268560A1 (en) * 2004-09-29 2008-10-30 Osram Opto Semiconductors Gmbh Method for Producing a Thin-Film Semiconductor Chip

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774178A (ja) * 1993-08-31 1995-03-17 Sony Corp 金属バンプの生産方法及び半導体装置の生産方法
JPH08203904A (ja) * 1995-01-25 1996-08-09 Toshiba Corp はんだバンプ形成方法
JP3392562B2 (ja) * 1995-02-14 2003-03-31 松下電器産業株式会社 半導体装置の実装方法
JPH08222843A (ja) * 1995-02-15 1996-08-30 Toppan Printing Co Ltd 配線基板の外部接続用電極の形成方法
DE19628702A1 (de) * 1995-07-25 1997-01-30 Fraunhofer Ges Forschung Flußmittelfreie Kontaktierung von Bauelementen
US6008071A (en) * 1995-09-20 1999-12-28 Fujitsu Limited Method of forming solder bumps onto an integrated circuit device
JPH09275107A (ja) * 1996-04-04 1997-10-21 Denso Corp 電極形成のための転写方法および装置
JP3445509B2 (ja) * 1998-11-10 2003-09-08 松下電器産業株式会社 半導体装置の製造方法および製造装置
JP3336999B2 (ja) * 1999-06-03 2002-10-21 日本電気株式会社 バンプシートとこれを用いたバンプ形成装置及びバンプ形成方法
US6808958B2 (en) * 2001-03-07 2004-10-26 Tessera, Inc. Methods of bonding microelectronic elements
DE10130290A1 (de) * 2001-06-26 2003-01-09 Pac Tech Gmbh Verfahren zur Herstellung einer Substratanordnung
JP4156637B2 (ja) * 2006-07-31 2008-09-24 シャープ株式会社 半導体装置、電子回路の製造方法および電子回路の製造装置
JP5066935B2 (ja) * 2007-02-22 2012-11-07 富士通株式会社 電子部品および電子装置の製造方法
JP2010109032A (ja) * 2008-10-29 2010-05-13 Fujitsu Microelectronics Ltd 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621147A (ja) * 1992-06-30 1994-01-28 Matsushita Electric Ind Co Ltd 電子部品の実装方法
US6394158B1 (en) * 1997-11-20 2002-05-28 Pac Tech Packaging Technologies Gmbh Method and device for thermally bonding connecting surfaces of two substrates
US6713714B1 (en) * 1999-01-18 2004-03-30 Pac Tech-Packaging Technologies Gmbh Method and device for thermally connecting the contact surfaces of two substrates
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
US20080268560A1 (en) * 2004-09-29 2008-10-30 Osram Opto Semiconductors Gmbh Method for Producing a Thin-Film Semiconductor Chip
US20070119618A1 (en) * 2005-11-25 2007-05-31 Yuji Nishitani Wiring board, electronic component mounting structure, and electronic component mounting method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP 06021147 A Machine Translation, Author: Yagi et al. Date: Published 01-1994 *

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