US20110284167A1 - Plasma processing equipment and plasma generation equipment - Google Patents

Plasma processing equipment and plasma generation equipment Download PDF

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Publication number
US20110284167A1
US20110284167A1 US13/144,299 US200913144299A US2011284167A1 US 20110284167 A1 US20110284167 A1 US 20110284167A1 US 200913144299 A US200913144299 A US 200913144299A US 2011284167 A1 US2011284167 A1 US 2011284167A1
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high frequency
magnetic field
plasma
induction antenna
frequency induction
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Ryoji Nishio
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to a plasma processing apparatus using inductively coupled plasma, and more specifically, relates to the structure of a high frequency induction antenna of the plasma processing apparatus, and a plasma generation apparatus.
  • process conditions for realizing a uniform processing result within a wafer plane through plasma processing have become narrower year after year, and therefore, plasma processing apparatuses are required to control the process conditions in a more complete manner.
  • apparatuses are required to control the distribution of plasma, the dissociation of process gas and the surface reaction within the reactor with extremely high accuracy.
  • ICP high frequency inductively coupled plasma source
  • ICP high frequency inductively coupled plasma source
  • high frequency current I flowing through the high frequency induction antenna creates an induction magnetic field H around the antenna, and the induction magnetic field H creates an induction electric field E.
  • the electrons are driven by the induction electric field E, ionizing gas atoms (molecules) and generating ion and electron pairs.
  • the electrons generated in this manner are driven again by the induction electric field E together with the original electrons, by which further ionization is caused.
  • plasma is generated via avalanche ionization phenomenon.
  • the area in which plasma density is highest is where the induction magnetic field H or the induction electric field E is strongest within the space in which plasma is generated, that is, the area closest to the antenna. Further, the intensity of the induction magnetic field H and the induction electric field E attenuates by double the distance from the line of current I flowing through the high frequency induction antenna set as center. Therefore, the intensity distribution of the induction magnetic field H and the induction electric field E, in other words, the plasma distribution, can be controlled via the shape of the antenna.
  • the ICP generates plasma via the high frequency current I flowing through the high frequency induction antenna.
  • the inductance increases and the current drops, but the voltage increases.
  • the voltage drops but the current increases.
  • the preferable level of current and voltage is determined by various reasons, not only from the viewpoint of uniformity, stability and generation efficiency of plasma, but also from the viewpoint of mechanical and electrical engineering.
  • the increase of current causes problems such as heat generation, power loss caused thereby, and current-resisting property of the variable capacitor used in the matching circuit.
  • the increase of voltage causes problems such as abnormal discharge, the influence of capacitive coupling of the high frequency induction antenna and plasma, and the voltage resisting property of the variable capacitor. Therefore, the designers of ICP must determine the shape and the number of turns of the high frequency induction antenna considering issues such as the current resisting property and the voltage resisting property of electric elements such as the variable capacitor used in the matching circuit, the cooling of the high frequency induction antenna and the problem of abnormal discharge.
  • the ICP is advantageous in that the intensity distribution of the induction magnetic field H and the induction electric field E created by the antenna, that is, the distribution of plasma, can be controlled by the winding method or the shape of the high frequency induction antenna. Based thereon, ICPs have been devised in various ways.
  • One actual example is a plasma processing apparatus for processing a substrate on a substrate electrode using ICP.
  • An example of such plasma processing apparatus is proposed, wherein a portion or all of the high frequency induction antenna is multi-spiral shaped, realizing a more uniform plasma, reducing the deterioration of electric power efficiency of a matching parallel coil of the matching circuit for the high frequency induction antenna, and minimizing temperature increase (refer for example to patent literature 1).
  • Another structure has been proposed in which a plurality of identical high frequency induction antennas are respectively disposed in parallel at given angles.
  • One example proposes disposing three lines of high frequency induction antennas at 120° intervals, so as to improve the circumferential uniformity (refer for example to patent literature 2).
  • the high frequency induction antenna can be wound vertically, wound on a plane, or wound around a dome. If a plurality of identical antenna elements are connected in parallel in a circuit-like manner as disclosed in patent literature 2, the total inductance of the high frequency induction antenna composed of multiple antenna elements can be reduced advantageously.
  • Another example proposes connecting two or more identically shaped antenna elements in parallel in a circuit-like manner to form the high frequency induction antenna, wherein the antenna elements are arranged either concentrically or radially so that the center of the antenna elements corresponds to the center of the object to be processed, the input ends of the respective antenna elements are arranged at angular intervals determined by dividing 360° by the number of antenna elements, and the antenna elements are formed to have a three-dimensional structure in the radial direction and the height direction (refer for example to patent literature 3).
  • an electron cyclotron resonance (hereinafter referred to as ECR) plasma source is a plasma generating device utilizing the resonance absorption of electromagnetic waves by electrons, which has superior characteristics in that the absorption efficiency of electromagnetic energy is high, the plasma igniting property is high, and a high density plasma can be obtained.
  • ECR electron cyclotron resonance
  • Currently provided plasma sources utilize microwaves (2.45 GHz) or electromagnetic waves of the UHF and VHF bands.
  • electrodeless discharge using waveguides is mainly used for microwaves (2.45 GHz)
  • parallel plate-type capacitive coupling discharge using capacitive coupling between the electrode radiating electromagnetic waves and plasma is mainly used for UHF and VHF.
  • a plasma source that utilizes an ECR phenomenon using a high frequency induction antenna.
  • plasma is generated using waves accompanying a kind of ECR phenomenon called whistler waves.
  • Whistler waves are also called helicon waves, and a plasma source utilizing this phenomenon is also called a helicon plasma source.
  • a high frequency induction antenna is wound around the side wall of a cylindrical vacuum chamber, a high frequency power having a relatively low frequency, such as 13.56 MHz, is applied, and a magnetic field is further applied thereto.
  • the high frequency induction antenna generates electrons rotating in the clockwise direction for half a cycle of 13.56 MHz and that rotate in the counterclockwise direction for the remaining half cycle of 13.56 MHz.
  • the mutual interaction between the electrons rotating in the clockwise direction and the magnetic field causes the ECR phenomenon.
  • the helicon plasma source has various problems and is not suitable for industrial application, since the time in which ECR phenomenon is caused is limited to half a cycle of the high frequency, the location in which ECR is caused is dispersed and the absorption length of electromagnetic wave is long so that a long cylindrical vacuum chamber is required and plasma uniformity is difficult to achieve, and plasma characteristics (such as the electron temperature and gas dissociation) cannot be controlled appropriately since the plasma characteristics changes in steps.
  • This phenomenon is a common phenomenon that occurs even in normal high frequency transmission cables such as coaxial cables, but since the high frequency induction antenna is either inductively coupled or capacitively coupled with plasma, the wavelength shortening effect appears more significantly.
  • the traveling waves headed toward the antenna and the interior of the vacuum chamber are superposed with the returning reflected waves, causing standing waves to occur in the antenna radiating high frequency and the space surrounding the same. This is because reflected waves are returned from various areas such as the end of the antenna, the plasma, and the interior of the vacuum chamber having high frequency currents radiated therein.
  • the standing waves also relate greatly to the wavelength shortening effect.
  • the ICP has inferior plasma ignition property compared to ECR plasma sources and capacitively coupled parallel plate type plasma sources due to the reason mentioned above. Similarly in helicon plasma sources, the generation efficiency of plasma is deteriorated every half cycle of the high frequency.
  • ICPs have been devised in various ways to improve the uniformity of plasma, but there is a drawback in that every attempt to devise the ICP leads to complicating the structure of the high frequency induction antenna, making it difficult to apply the ICP to industrial apparatuses. Furthermore, the prior art apparatuses are not intended to significantly improve the plasma ignition while maintaining a superior plasma uniformity, so the problem of inferior plasma ignition has not been solved.
  • the microwaves Since the wavelength of microwaves (2.45 GHz) is short, the microwaves are propagated within the discharge space via various high-order propagating modes in a large-scale ECR plasma source. Thus, electric fields are collectively formed locally at various portions within the plasma discharge space, and high density plasma is generated at those portions. Further, since the microwaves reflected within the plasma apparatus are overlapped with the electric field distribution of incident microwaves propagated via high-order propagating modes and standing waves occur thereby, electric field distribution within the apparatus may become even more complex. By the above two reasons, it is generally difficult to obtain uniform plasma characteristics within a large-scale apparatus. Further, once such complex electric field distribution is generated, it is actually difficult to control the electric field distribution and to change the electric field distribution to a preferable distribution for processing.
  • Such control requires a change in the apparatus structure so as to prevent the occurrence of high-order propagating modes, or to prevent reflected waves reflected from the apparatus from forming a complex electric field distribution. It is almost impossible to achieve via a single apparatus a structure most suitable for a variety of discharge conditions. Further, a magnetic field as strong as 875 Gauss is required to cause ECR discharge via microwaves (2.45 GHz), but there is a drawback in that the power consumed by the coil for generating such magnetic field or the apparatus structure including the yoke becomes extremely large.
  • the present invention aims at providing a plasma source enabling superior plasma ignition and uniformity even when applied to large scale plasma processing apparatuses.
  • the present invention provides a plasma processing apparatus using ICP, capable of utilizing the ECR discharge phenomenon. According to the present invention, superior uniformity of plasma can be achieved by optimizing the antenna structure with minimum devising, and plasma ignition can be improved significantly.
  • the present invention provides a plasma processing apparatus supplying high frequency current to a high frequency induction antenna disposed outside a vacuum processing chamber and applying a magnetic field thereto for generating plasma from a gas supplied to a vacuum processing chamber and subjecting a sample to plasma processing, wherein the high frequency induction antenna is divided into n (an integer of n ⁇ 2) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by ⁇ (wavelength of high frequency power supply)/n flows sequentially delayed in a clockwise direction with respect to a line of magnetic force respectively to the tandomly arranged high frequency induction antenna elements.
  • an induction electric field rotating in a clockwise direction with respect to the line of magnetic force is formed within the plasma generating area, and the electrons in the plasma are rotated in the clockwise direction by the induction electric field, thereby solving the problems mentioned earlier.
  • a second step for solving the problems of the prior art is to apply a magnetic field B to the clockwise-rotating electrons to cause Larmor motion of the electrons.
  • Larmor motion is a clockwise motion based on E ⁇ B drift, and in order for this motion to occur, the induction electric field E mentioned above and the magnetic field B must satisfy a relationship of E ⁇ B ⁇ 0.
  • the direction of application of the magnetic field B is a direction in which the rotating direction of the induction electric field E becomes clockwise with respect to the line of magnetic force of the magnetic field B. When these conditions are satisfied, the clockwise rotating direction of the induction electric field E and the rotating direction of the Larmor motion correspond.
  • the variation frequency f B of the magnetic field B and a rotational frequency of Larmor motion must satisfy a relationship of 2 ⁇ f B ⁇ c .
  • the object of the present invention can be achieved by having the electron cyclotron frequency ⁇ c of the magnetic field intensity correspond to the rotational frequency f of the rotating induction electric field E to cause an electron cyclotron resonance phenomenon.
  • the present invention provides a plasma processing apparatus comprising a vacuum reactor composing a vacuum processing chamber for storing a sample, a gas inlet for introducing a processing gas into the vacuum processing chamber, a high frequency induction antenna disposed outside the vacuum processing chamber, a magnetic field coil for forming a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma supplying a high frequency current to the high frequency induction antenna, and a power supply for supplying power to the magnetic field coil, the high frequency power supply supplying high frequency current to the high frequency induction antenna for generating plasma from the gas supplied to the vacuum processing chamber to subject the sample to plasma processing, wherein the high frequency induction antenna is divided into n (an integer of n ⁇ 2) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by ⁇ (wavelength of high frequency power supply)/n flows respectively to the tandomly arranged high frequency induction antenna elements, and a
  • the present invention further provides a plasma processing apparatus comprising a vacuum reactor composing a vacuum processing chamber for storing a sample, a gas inlet for introducing a processing gas into the vacuum processing chamber, a high frequency induction antenna disposed outside the vacuum processing chamber, a magnetic field coil for forming a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma supplying a high frequency current to the high frequency induction antenna, and a power supply for supplying power to the magnetic field coil, the high frequency power supply supplying high frequency current to the high frequency induction antenna for generating plasma from the gas supplied to the vacuum processing chamber to subject the sample to plasma processing, wherein the plurality of high frequency induction antennas and the magnetic field are arranged so that the induction electric field E formed by the plurality of antennas and the magnetic field B satisfy a relationship of E ⁇ B ⁇ 0.
  • the present invention further provides the plasma processing apparatus comprising a vacuum reactor composing a vacuum processing chamber for storing a sample, a gas inlet for introducing a processing gas into the vacuum processing chamber, a high frequency induction antenna disposed outside the vacuum processing chamber, a magnetic field coil for forming a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma supplying a high frequency current to the high frequency induction antenna, and a power supply for supplying power to the magnetic field coil, the high frequency power supply supplying high frequency current to the high frequency induction antenna for generating plasma from the gas supplied to the vacuum processing chamber to subject the sample to plasma processing, wherein a rotational frequency f of the rotating induction electric field E is made to correspond to an electron cyclotron frequency ⁇ c via the magnetic field B.
  • the present invention further provides the plasma processing apparatus comprising a vacuum reactor composing a vacuum processing chamber for storing a sample, a gas inlet for introducing a processing gas into the vacuum processing chamber, a high frequency induction antenna disposed outside the vacuum processing chamber, a magnetic field coil for forming a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma supplying a high frequency current to the high frequency induction antenna, and a power supply for supplying power to the magnetic field coil, the high frequency power supply supplying high frequency current to the high frequency induction antenna for generating plasma from the gas supplied to the vacuum processing chamber to subject the sample to plasma processing, wherein the high frequency induction antenna and the magnetic field are designed so that the direction of rotation of the induction electric field E generated via the antenna rotates in a clockwise direction with respect to the line of magnetic force of the magnetic field B created by the magnetic field coil.
  • the present invention provides a plasma generation apparatus comprising a vacuum processing chamber and a plurality of high frequency induction antennas through which high frequency flows disposed outside the vacuum processing chamber, wherein an induction electric field distribution formed in the vacuum processing chamber via the plurality of antennas is formed to rotate in a constant direction in a magnetic field having a finite value.
  • the present invention provides a plasma generation apparatus comprising a vacuum processing chamber and a plurality of high frequency induction antennas through which high frequency flows disposed outside the vacuum processing chamber, wherein the plurality of antennas are arranged axisymmetrically, a magnetic field is distributed axisymmetrically, the axis of the plurality of antennas and the axis of the magnetic field distribution correspond, and the induction electric field distribution formed in the vacuum processing chamber rotates in a constant direction.
  • the plasma generation apparatus further characterizes in that a direction of rotation of the induction electric field distribution rotating in the constant direction is clockwise with respect to a direction of a line of magnetic force of the magnetic field.
  • the plurality of antennas and the magnetic field are arranged so that the induction electric field E formed via plurality of antennas and the magnetic field B satisfy a relationship of E ⁇ B ⁇ 0.
  • a rotational frequency f of the rotating induction electric field E formed via the plurality of antennas is made to correspond to an electron cyclotron frequency via the magnetic field B.
  • the magnetic field B can be a static magnetic field or a variable magnetic field, wherein if the magnetic field is a variable magnetic field, the variation frequency f B thereof and a rotational frequency of Larmor motion (electron cyclotron frequency ⁇ c ) should satisfy a relationship of 2 ⁇ f B ⁇ c in order to achieve the object of the present invention.
  • FIG. 1 is a vertical cross-sectional view illustrating the outline of the structure of a plasma processing apparatus to which the present invention is applied.
  • FIG. 2 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 3 is an explanatory view of the state of generation of plasma by the state of the electric field according to the present invention.
  • FIG. 4 is an explanatory view showing the distribution of electric field intensity generated by the prior art antenna.
  • FIG. 5 is an explanatory view of the distribution of electric field intensity generated by the antenna according to the present invention.
  • FIG. 6 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 7 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 8 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 9 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 10 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 11 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • FIG. 12 is an explanatory view of the method for supplying power to high frequency induction antenna elements according to the present invention.
  • the application of the plasma processing apparatus according to the present invention is not restricted to the field of semiconductor device fabrication, and can be extended to various fields of plasma processing, such as the fabrication of liquid crystal displays, film deposition and surface treatment of various materials.
  • a plasma etching apparatus for manufacturing semiconductor devices is taken as an example in describing the preferred embodiments of the present invention.
  • a high frequency inductively coupled plasma processing apparatus is composed of a vacuum reactor 11 including a vacuum processing chamber 1 having the inner side thereof maintained in vacuum, an insulating material 12 defining a ceiling of the vacuum processing chamber for introducing an electric field generated via high frequency into the vacuum processing chamber, an evacuation means 13 connected for example to a vacuum pump for maintaining the interior of the vacuum processing chamber 1 in vacuum, an electrode (sample stage) 14 on which an object to be processed (semiconductor wafer) W is placed, a transfer system 2 equipped with a gate valve 21 through which the semiconductor wafer W being the object to be processed is transferred between the vacuum processing chamber and the exterior, a gas inlet 3 for introducing processing gas, a biasing high frequency power supply 41 for applying bias voltage to the semiconductor wafer W, a biasing matching unit 42 , a high frequency power supply 51 for generating plasma, a matching unit 52 for generating plasma, a plurality of delay means
  • the vacuum reactor 11 is formed for example of aluminum or stainless steel having the surface thereof subjected to alumite processing, and is electrically grounded. Surface treatments other than alumite processing, such as treatments using other substances having high plasma durability (such as yttria: Y 2 O 3 ) can also be applied.
  • the vacuum processing chamber 1 is equipped with an evacuation means 13 , and a transfer system 2 including a gate valve 21 for enabling semiconductor wafers as objects to be processed to be carried into and out of the chamber 1 .
  • An electrode 14 on which the semiconductor wafer W is placed is disposed in the vacuum processing chamber 1 . By the transfer system 2 , the wafer W carried into the vacuum processing chamber is placed on the electrode 14 .
  • a biasing high frequency power supply 41 is connected to the electrode 14 via a biasing matching unit 42 with the aim to control the energy of ions being incident on the semiconductor wafer W during plasma processing.
  • a gas for the etching process is introduced through a gas inlet 3 into the vacuum processing chamber 1 .
  • high frequency induction antenna elements 7 - 1 (not shown), 7 - 2 , 7 - 3 (not shown) and 7 - 4 are disposed at positions opposed to the semiconductor wafer W on a surface opposed to the semiconductor wafer W on the atmospheric side having intervened therebetween an insulating material such as quartz or alumina ceramic.
  • High frequency induction antenna elements . . . , 7 - 2 , . . . and 7 - 4 are arranged on a concentric circle having a center corresponding to the center of the semiconductor wafer W.
  • FIG. 1 and 7 - 4 are composed of multiple antenna elements having an identical shape.
  • Power feed ends A of the multiple antenna elements are connected via a plasma generating matching unit 52 to a high frequency power supply 51 for generating plasma, and grounded ends B thereof are connected to a ground potential in identical manners.
  • delay means 6 - 2 , 6 - 3 (not shown) and 6 - 4 for delaying the phases of currents flowing through the respective high frequency induction antenna elements . . . , 7 - 2 , . . . and 7 - 4 .
  • a refrigerant passage not shown for cooling is formed in the insulating material 12 , and the material 12 is cooled by having water, Fluorinert (Registered Trademark), air, nitrogen or other fluids flown therethrough.
  • the antenna, the vacuum reactor 11 and the wafer mounting stage 14 are also cooled or subjected to temperature control.
  • FIG. 2 A first example of the plasma processing apparatus according to the present invention will be described with reference to FIG. 2 .
  • the high frequency induction antenna 7 is divided into four (an integer of n ⁇ 2) high frequency induction antenna elements 7 - 1 through 7 - 4 on one circle.
  • the respective power feed ends A or the grounded ends B of the respective high frequency induction antenna elements 7 - 1 , 7 - 2 , 7 - 3 and 7 - 4 are each separated by 360°/4 (360°/n) in the clockwise direction, and high frequency current is supplied from the high frequency power supply 51 for generating plasma via the plasma generating matching unit 52 and through a power feed point 53 and via the respective power feed ends A to the respective high frequency induction antenna elements 7 - 1 , 7 - 2 , 7 - 3 and 7 - 4 .
  • the respective high frequency induction antenna elements 7 - 1 through 7 - 4 have their grounded ends B separated by approximately ⁇ /4 from their respective power feed ends A in the clockwise direction around one circle.
  • the lengths of the respective high frequency induction antenna elements 7 - 1 through 7 - 4 are not necessary ⁇ /4, but should preferably be equal to or smaller than ⁇ /4 of the generated standing wave.
  • a ⁇ /4 delay circuit 6 - 2 , a ⁇ /2 delay circuit 6 - 3 and a 3 ⁇ /4 delay circuit 6 - 4 are respectively inserted between the power feed point 53 and the power feed ends A of the high frequency induction antenna elements 7 - 2 , 7 - 3 and 7 - 4 .
  • the currents I 1 , I 2 , I 3 and I 4 flowing through the respective induction antenna elements 7 - 1 through 7 - 4 will have phases sequentially delayed by ⁇ /4 ( ⁇ /n) as shown in FIG. 2 (B).
  • the electrons in the plasma driven via current I 1 will be driven subsequently via current I 2 .
  • the electrons in the plasma driven via current I 3 will be driven subsequently via current I 4 .
  • FIG. 3 the arrangement of the power feed ends A and grounded ends B of the high frequency induction antenna elements 7 - 1 , 7 - 2 , 7 - 3 and 7 - 4 are the same as FIG. 2 . Further, the directions of currents I 1 through I 4 flowing through the respective induction antenna elements are all illustrated to flow from the power feed ends A toward the grounded ends B. The currents flowing through the respective high frequency induction antenna elements have their phases I 1 through I 4 respectively displaced by 90°, as shown in FIG. 2 .
  • the current I and the induction electric field E are correlated using induction magnetic field H via Maxwell's equations shown in expressions (1) and (2) below.
  • E, H and I represent vectors of all the electric field, the magnetic field and the current of the high frequency induction antennas and plasma, ⁇ represents magnetic permeability, and ⁇ represents permittivity.
  • FIG. 3 (A) The relationship of phases of the currents are shown on the right side of FIG. 3 (A).
  • the distribution of the induction electric field E is axisymmetric.
  • the direction of the induction electric field E is rotated for 90° in the clockwise direction. As shown in FIG.
  • the high frequency induction antenna according to the present invention creates an induction electric field E that rotates toward the right, that is, in the clockwise direction, with time.
  • the electrons are also driven by the induction electric field E to rotate in the clockwise direction.
  • the rotation period of the electrons corresponds to the frequency of the high frequency current.
  • the electrons are driven via the induction electric field E according to the present invention similar to normal ICPs.
  • the present invention varies from normal ICPs or helicon plasma sources in that the electrons are driven in a constant direction (clockwise in the drawing) regardless of the phase of current I of the high frequency induction antenna, and that there is no moment when the rotation is stopped.
  • FIG. 4 illustrates a frame format of the distribution of the induction electric field E created by a prior art ICP.
  • a current having the same phase is flown through the antenna regardless of whether the antenna forms a single circle or whether the antenna is divided into multiple elements, so the induction electric field E created by the antenna will be the same in the circumferential direction.
  • a donut-shaped electric field distribution is created in which the induction electric field E has a maximum value appearing immediately below the antenna and is attenuated toward the center and the circumference of the antenna.
  • the distribution is point symmetric with respect to a center point O in the X-Y plane.
  • Such an induction electric field E has been measured and confirmed in the past as induction magnetic field H (refer for example to non patent literature 2).
  • the induction electric field E created by the antenna according to the present invention will be considered.
  • a positive peak current flows through I 4 and an opposite peak current flows through I 2 .
  • I 1 and I 3 are small.
  • the maximum value of the induction electric field E appears below the antenna element 7 - 4 through which I 4 flows and the antenna element 7 - 2 through which I 2 flows.
  • No strong induction electric field E appears below antenna elements 7 - 1 and 7 - 3 through which current barely flows.
  • This example is shown in frame format in FIG. 5 .
  • the drawing shows two peaks appearing on the X axis in the X-Y plane. As shown in FIG.
  • the induction electric field E according to the present invention has two large peaks on the antenna circle, and is axisymmetric (symmetric with respect to the Y axis) in the X-Y plane.
  • the present distribution has a gentle peak on the Y axis.
  • the height of the gentle peak distribution is low, and the position appears on the center coordinate O.
  • the arrangement of FIG. 2 of the present invention creates an induction electric field E which is completely different from that created via prior art ICP or helicon plasma source, and which rotates in a constant direction (clockwise in the drawing) regardless of the phase of current I of the high frequency induction antenna.
  • the present invention enables to generate an induction electric field having local peaks as mentioned earlier, but the uniformity of the generated plasma is not deteriorated thereby.
  • the induction electric field distribution on the X axis of FIG. 5 is determined by the distribution of the induction magnetic field generated by the antenna. In other words, when the same current is supplied, the induction electric field distribution on the X axis of FIG. 4 and the induction electric field distribution on the X axis of FIG. 5 are equal. Further, since the induction electric field of the present invention rotates via the same frequency as the high frequency current flown through the antenna, the present invention creates a point symmetric induction electric field distribution with respect to center point O on the X-Y plane when averaging a single cycle of the high frequency current.
  • the present invention creates a completely different induction electric field distribution compared to the prior art, but the advantageous features of the prior art ICP, in which the induction electric field distribution is determined by the structure of the antenna and a point-symmetric and circumferentially uniform plasma is generated, are maintained.
  • the magnetic field B having a perpendicular magnetic field component with respect to the rotational plane of the induction electric field E.
  • the magnetic field B there are two conditions that the magnetic field B must satisfy.
  • One condition is that the magnetic field B should be applied so that the direction of rotation of the rotating induction electric field E is constantly clockwise with respect to the direction of the line of magnetic force of the magnetic field B.
  • the induction electric field E rotates in the clockwise direction with respect to the paper plane, that is, in the right direction, as have been described.
  • the direction of the lines of magnetic force must have components directed from the front side of the plane surface toward the rear side thereof. According to such arrangement, the direction of rotation of the induction electric field E and the direction of rotation of Larmor motion correspond.
  • This first condition can also be expressed as applying a magnetic field B so that the direction of rotation of the induction electric field E corresponds to the direction of rotation of the Larmor motion.
  • the remaining condition is that a magnetic field B must be applied that satisfies E ⁇ B ⁇ 0 with respect to the induction electric field E.
  • this condition of E ⁇ B ⁇ 0 must be satisfied at some portion of the space in which plasma is to be generated but is not necessarily satisfied in all the space in which plasma is to be generated.
  • the present condition of E ⁇ B ⁇ 0 is included in the aforementioned first condition. According to the present condition of “E ⁇ B ⁇ 0”, the electrons perform rotational movement called a Larmor motion around the line of magnetic force (guiding center).
  • the Larmor motion is not a rotational movement caused by the rotating induction electric field, but is so-called an electron cyclotron motion.
  • the rotational frequency thereof is called an electron cyclotron frequency ⁇ c , and can be expressed by the following expression (3).
  • q represents the elementary charge of the electrons
  • B represents the magnetic field intensity
  • m e represents the mass of the electrons.
  • the characteristic feature of the electron cyclotron motion is that the frequency thereof is determined only via the magnetic field intensity.
  • the magnetic field B applied here can either be a static magnetic field or a variable magnetic field.
  • the variation frequency f 3 must satisfy a relationship of 2 ⁇ f B ⁇ c with respect to the rotational frequency (electron cyclotron frequency ⁇ c ) of the Larmor motion. The meaning of this relationship is that from the view of a single cycle of electrons performing electron cyclotron motion, the variation of the variable magnetic field is sufficiently small and can be regarded as a static magnetic field.
  • a plasma heating method called electron cyclotron (ECR) heating can be used to significantly improve the plasma generating ability of electrons.
  • ECR electron cyclotron
  • FIG. 1 illustrates one embodiment considering these points.
  • the method for enabling ECR discharge using a high frequency inductively coupled plasma source as mentioned in the present invention can be applied by constantly satisfying the conditions mentioned earlier, and is not dependent on the frequency of the high frequency being used or the magnetic intensity.
  • practical restrictions such as the size of the reactor of the plasma being generated create restrictions in the frequency and the magnetic field intensity to be used.
  • ⁇ represents the velocity of electrons in the direction horizontal to the plane of the magnetic field shown in FIG. 3 .
  • the frequency of the utilized high frequency must be set high and the magnetic field intensity must also be set high so that ECR phenomenon occurs.
  • the selection of frequency and magnetic field intensity belongs to the field of engineering design, and the principle itself taught in the present invention is not impaired thereby.
  • the necessary and sufficient conditions of the principle for enabling ECR discharge in an ICP taught in the present invention can be summarized into the following four conditions.
  • the first condition is to create an induction electric field E distribution that is constantly rotating in the clockwise direction with respect to the direction of the line of magnetic force of the magnetic field B applied to the space in which plasma is to be generated.
  • the second condition is to apply a magnetic field B that satisfies E ⁇ B ⁇ 0 with respect to the magnetic field B and the distribution of the clockwise-rotating induction electric field E with respect to the line of magnetic force thereof.
  • the third condition is to have the rotational frequency f of the rotating induction electric field E correspond to the electron cyclotron frequency ⁇ c via the magnetic field B.
  • the fourth condition is that the change of the magnetic field B is sufficiently small with respect to a single cycle of electrons in electron cyclotron motion so that the magnetic field B can be regarded as a static magnetic field.
  • FIG. 1 shows an example satisfying the above four conditions, but as long as the above-mentioned necessary and sufficient conditions are satisfied, the example of FIG. 1 can be modified in various ways to still enable ECR discharge via ICP. In other words, one must note that any modification of the apparatus arrangement of FIG. 1 will still be regarded as an example of the present invention as long as the above-mentioned necessary and sufficient conditions are satisfied. Such modifications are merely a matter of engineering design, and they would not alter the physical principle taught by the present invention. Modified examples of FIG. 1 will be describe briefly hereafter.
  • the insulating material 12 has a planar shape, and the high frequency induction antenna 7 is arranged on the upper portion thereof.
  • the meaning of this arrangement is that an induction electric field E having a distribution constantly rotating clockwise with respect to the line of magnetic force of the magnetic field B is created in the space in which plasma should be generated, that is, in the space formed between the insulating material 12 and the wafer W to be processed. This corresponds to the first condition of the above-mentioned necessary and sufficient conditions. Therefore, the planar shape of the insulating material 12 and the arrangement of the high frequency induction antenna 7 disposed above the insulating material 12 are not indispensable arrangements according to the present invention.
  • the insulating material 12 can be a trapezoidal or spherical bell jar, and as long as the contents of the first necessary and sufficient conditions can be realized in the space formed between the bell jar and the wafer W to be processed, the high frequency induction antenna can be arranged at any position with respect to the bell jar.
  • the same stands for the arrangement in which a high frequency induction antenna 7 is arranged on the side of a cylindrical insulating material 12 , and as long as the contents of the first necessary and sufficient conditions can be realized in the space formed between the cylindrical insulating material 12 and the wafer W to be processed, the arrangement will constitute an embodiment of the present invention.
  • the high frequency induction antenna 7 divided into four parts is arranged on one circle.
  • This arrangement that the antenna elements are arranged “on one circle” is not the necessary condition for realizing the contents of the first necessary and sufficient conditions.
  • the contents of the first necessary and sufficient conditions can be realized even if high frequency induction antenna divided into four parts are arranged in two circles, a large circle and a small circle, or arranged on the inner circumference and the outer circumference, or above and below or obliquely with respect to the planar insulating material 12 .
  • the number of circles or the arrangements can be selected freely.
  • the induction antenna elements can be arranged on the inner circumference and the outer circumference, or above and below or obliquely with respect thereto. Further, the antenna divided into multiple parts can be arranged on three or more circles.
  • the circular high frequency induction antenna 7 divided into four parts is arranged on one circle.
  • the antenna “divided into four parts” is not an indispensable arrangement for realizing the contents of the first necessary and sufficient conditions.
  • the number into which the high frequency induction antenna is divided is an integer n satisfying n ⁇ 2.
  • N numbers of circular arc-shaped antennas can be used to form a single circle of high frequency induction antenna 7 .
  • a method for forming an induction electric field E that rotates in the clockwise direction with respect to the direction of the line of magnetic force via phase control of currents flowing to the high frequency, but the electric field can be formed without fail when n ⁇ 3.
  • the induction electric field E may rotate both in the clockwise and counterclockwise directions, and seems that the contents of the first necessary and sufficient conditions is not satisfied.
  • the high frequency induction antenna according to the present invention can be divided into an integer n that satisfies as mentioned earlier.
  • the circular arc-shaped high frequency induction antenna 7 divided into four parts is arranged on one circle.
  • the “arrangement on a circle” is not an indispensable arrangement for realizing the first point of the necessary and sufficient conditions.
  • four linear antennas arranged in a square can realize the contents of the first necessary and sufficient conditions.
  • FIG. 1 the power feed ends A and grounded ends B of the circular high frequency induction antenna divided into four parts are arranged point-symmetrically on one circle in the order of ABABABAB.
  • This feature that the “power feed ends and the grounded ends arranged point-symmetrically” is not an indispensable arrangement for realizing the contents of the first necessary and sufficient conditions.
  • the power feed ends A and the grounded ends B can be arranged arbitrarily.
  • FIG. 6 illustrates an example in which the positions of the power feed end A and the grounded end B of the high frequency induction antenna element 7 - 1 is reversed so that the direction of the high frequency current I 1 is reversed.
  • FIG. 7 By applying this arrangement, the arrangement of FIG. 2 can be further simplified, an example of which is shown in FIG. 7 .
  • the arrangement of FIG. 7 utilizes that (I 1 and I 3 ) and (I 2 and I 4 ) of FIG. 2 are relatively delayed by ⁇ /2, that is, reversed. Currents of the same phase are flown to (I 1 and I 3 ) and (I 2 and I 4 ) but the power feed ends A and the grounded ends B of I 3 and I 4 are reversed. Further, since a ⁇ /4 delay 6 - 2 is arranged between (I 1 and I 3 ) and (I 2 and I 4 ), an induction electric field E rotating in the same manner as FIG. 2 (illustrated in FIG. 5 ) can be formed.
  • a phase delay circuit is disposed between the matching unit arranged in the power supply output section and the high frequency induction antenna elements 7 - 1 through 7 - 4 .
  • This arrangement that “the phase delay circuit is disposed between the matching unit and the high frequency induction antenna elements 7 - 1 through 7 - 4 ” is not an indispensable arrangement for realizing the contents of the first necessary and sufficient conditions. It is only necessary to supply current to the high frequency induction antenna to create a rotating induction electric field E as shown in FIG. 5 in order to satisfy the contents of the first necessary and sufficient conditions.
  • FIG. 8 illustrates another example in which a rotating induction electric field E as shown in FIG. 5 is formed, similar to FIG. 2 . According to the arrangement of FIG.
  • the number of matching units 53 are increased, but the power of each high frequency power supply can be reduced and the reliability of the high frequency power supplies can be improved. Moreover, by fine-tuning the power supplied to the respective antennas, the circumferential uniformity of antennas can be controlled.
  • FIG. 10 combines the embodiments of FIGS. 9 and 7 .
  • the same two high frequency power supplies 51 - 1 and 51 - 2 connected to the oscillator 54 are used, but a ⁇ /4 delay means 6 - 2 is inserted between the output of the oscillator 54 and one of the high frequency power supplies 51 - 3 to delay the phase by ⁇ /4, and the high frequency induction antenna elements 7 - 1 and 7 - 2 have power feed ends A and grounded ends B arranged in a similar manner as FIG.
  • the phases of I 2 and I 4 are delayed by ⁇ /4 from I 1 , and I 2 and I 4 will have currents having the same phase, but since the direction of I 4 (power feed end A and grounded end B) is reversed compared to FIG. 2 , the induction electric field E formed by I 2 and I 4 will be the same as that of FIG. 2 .
  • the embodiment shown in FIG. 10 has a different arrangement from FIG. 2 but forms the same induction electric field E as FIG. 2 .
  • the present embodiment provides a plasma processing apparatus comprising a vacuum reactor having a vacuum processing chamber capable of having a sample stored therein, a gas inlet for introducing processing gas into the vacuum processing chamber, a high frequency induction antenna disposed outside the vacuum processing chamber, a magnetic field coil forming a magnetic field within the vacuum processing chamber, a high frequency power supply supplying a high frequency current to the high frequency induction antenna for generating plasma, and a power supply for supplying power to the magnetic field coil, wherein high frequency current is supplied from the high frequency power supply to the high frequency induction antenna to generate plasma by the gas supplied to the vacuum processing chamber to subject the sample to plasma processing, characterized in that the high frequency induction antenna is divided into m (m being a positive even number) high frequency induction antenna elements, the divided high frequency induction antenna elements respectively arranged in tandem on a circle, so that high frequency currents delayed sequentially by ⁇ (wavelength of high frequency power supply)/m in advance from m/2 high frequency power supplies are sequentially flown to the tan
  • FIGS. 2 , 6 , 7 , 8 , 9 and 10 differ, they all create the same induction electric field distribution E that rotates in the clockwise direction with respect to the line of magnetic force, as shown in FIG. 5 .
  • the illustrated arrangements are all variations satisfying the contents of the first necessary and sufficient conditions.
  • the power feed end A and grounded end B of the antenna element 7 - 1 and the power feed end A and grounded end B of the antenna element 7 - 2 are arranged point-symmetrically in the circumferential direction in the order of ABAB, and one of the two outputs of the oscillator 54 is connected via a high frequency power supply 51 - 1 and a matching unit 52 - 1 to a power feed point 53 - 1 of the power feed end A of the high frequency induction antenna element 7 - 1 while the other output is connected via a ⁇ /2 delay means 6 - 3 , a high frequency power supply 51 - 2 and a matching unit 52 - 2 to a power feed point 53 - 2 of the power feed end A of the high frequency induction antenna element 7 - 2 .
  • the direction of currents of the respective high frequency induction antenna elements is the direction shown by arrows of I 1 and I 2 .
  • currents having reversed phases ⁇ /2 phase delay
  • the high frequency current flown to the respective high frequency induction antenna elements 7 - 1 and 7 - 2 are either directed upwards or downwards with respect to the drawing per every half cycle of the phase. Therefore, the induction electric field E formed by FIG. 11 will have two peaks similar to FIG. 5 .
  • the electrons driven by this induction electric field E will be capable of rotating both in clockwise and counterclockwise directions according to this arrangement.
  • the clockwise-rotating electrons receive high frequency energy in a resonant manner via ECR phenomenon and cause highly efficient avalanche ionization, but the counterclockwise-rotating electrons cannot receive high frequency energy and cannot cause efficient ionization.
  • the plasma generation is performed actively by the clockwise-rotating electrons, and only the electrons receiving high frequency energy efficiently and accelerated to high speed remain.
  • the current components flown through the plasma are mainly composed of slow counterclockwise-rotating electrons and high speed clockwise-rotating electrons, and naturally, the current formed by the high-speed clockwise-rotating electrons becomes dominant, so that as shown in expressions (1) and (2), the induction electric field E will rotate in the clockwise direction.
  • This phenomenon is similar to the prior art ECR plasma sources using microwaves, UHF and VHF in which ECR discharge is caused even if the electric field is not rotated in a specific direction.
  • FIG. 12 By applying the effect of FIG. 6 (or FIG. 7 or FIG. 10 ) to FIG. 11 , it becomes possible to cause the ECR phenomenon via a simple arrangement as shown in FIG. 12 .
  • FIG. 12 high frequency currents having reversed phases are not supplied, but high frequency currents having the same phase are supplied to the respective high frequency induction antenna elements, and since the power feed ends A and grounded ends B of the respective high frequency induction antenna elements are the same, the directions of the currents will be reversed, according to which the effect similar to FIG. 11 can be achieved.
  • FIG. 1 illustrates an upper coil 81 and a lower coil 82 as two electromagnets and a yoke 83 as elements composing the magnetic field.
  • An electromagnet, a stationary magnet or a combination of electromagnet and stationary magnet can be used as the means for generating the magnetic field.
  • FIG. 1 illustrates a Faraday shield 9 .
  • the Faraday shield intrinsically functions to suppress the capacitive coupling between plasma and antenna radiating high frequency, it cannot be used in capacitively coupled ECR plasma sources.
  • the Faraday shield can be used similar to normal ICPs.
  • the “Faraday shield” is not indispensable according to the present invention, since it is not related to the aforementioned necessary and sufficient conditions.
  • the Faraday shield is effective from the viewpoint of industrial applicability. This is because the Faraday shield has a function to interrupt the capacitive coupling of antenna and plasma without influencing the induction magnetic field H (that is, the induction electric field E) irradiated from the antenna.
  • the Faraday shield In order to completely interrupt the capacitive coupling, the Faraday shield should be grounded. Normally in ICPs, the interruption of capacitive coupling causes the plasma ignition to be deteriorated further. According to the present invention, however, a superior plasma ignition is obtained even when the capacitive coupling is completely interrupted, since the arrangement utilizes the highly efficient ECR heating via the induction electric field E caused by inductive coupling. However, due to various reasons, it is possible to connect an electric circuit to the Faraday shield and control the high frequency voltage generated in the Faraday shield to 0 V or higher.
  • FIG. 1 further illustrates a gas inlet 3 , a gate valve 21 and a wafer bias (bias power supply 41 and matching unit 42 ), but since these elements are also not related to the aforementioned necessary and sufficient conditions, they are not indispensable elements of the present invention.
  • the gas inlet is necessary for generating plasma, but it can be arranged on the side wall of the vacuum reactor 11 or on the electrode 14 on which the wafer W is placed. Further, the gas can be injected either planarly or through pores.
  • the arrangement of the gate valve 21 is merely illustrated with the aim to enable wafers to be carried into and out of the chamber for industrial application. Further, in industrial application of the plasma processing apparatus, the wafer bias (bias power supply 41 and matching unit 42 ) is not necessarily required, and is not indispensable for industrial application of the present invention.
  • the induction electric field E formed by the high frequency induction antenna rotates in the clockwise direction with respect to the line of magnetic force of the magnetic field.
  • the shape of the rotational plane thereof depends on the structure of the high frequency induction antenna, and are circular-shaped or oval-shaped, for example. Therefore, the induction electric field E necessarily has a center axis of rotation.
  • such center axes exist for example in the magnetic field B, the object to be processed (such as a circular wafer or a square glass substrate), the vacuum reactor, the gas injection ports, the electrode on which the object to be processed is placed, and the evacuation port. It is not necessary according to the present invention for these center axes to correspond, and they are not indispensable components.
  • a high frequency induction magnetic field for driving currents is constantly formed in the processing chamber according to the present invention, so that the plasma ignition is improved and a high density plasma is obtained.
  • the length of the high frequency induction antenna can be controlled according to the present invention, so that the apparatus can correspond to any increase in size of the object to be processed while having the plasma uniformity in the circumferential direction improved.

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