US20110220512A1 - Plating bath and method - Google Patents
Plating bath and method Download PDFInfo
- Publication number
- US20110220512A1 US20110220512A1 US12/661,301 US66130110A US2011220512A1 US 20110220512 A1 US20110220512 A1 US 20110220512A1 US 66130110 A US66130110 A US 66130110A US 2011220512 A1 US2011220512 A1 US 2011220512A1
- Authority
- US
- United States
- Prior art keywords
- copper
- alkyl
- aryl
- compounds
- reaction product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- SHKUUQIDMUMQQK-UHFFFAOYSA-N C(CCOCC1CO1)COCC1CO1 Chemical compound C(CCOCC1CO1)COCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 description 20
- KYOUFPTTWBKBHR-UHFFFAOYSA-N C1=CC=C(C2=CN=CC2)C=C1 Chemical compound C1=CC=C(C2=CN=CC2)C=C1 KYOUFPTTWBKBHR-UHFFFAOYSA-N 0.000 description 17
- HWMWZSYYVIIXOF-UHFFFAOYSA-N CC1=CN=C(C)C1 Chemical compound CC1=CN=C(C)C1 HWMWZSYYVIIXOF-UHFFFAOYSA-N 0.000 description 16
- 0 [1*]C1=C([2*])NC([3*])=N1 Chemical compound [1*]C1=C([2*])NC([3*])=N1 0.000 description 15
- BRLQWZUYTZBJKN-UHFFFAOYSA-N ClCC1CO1 Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 10
- VXIKDBJPBRMXBP-UHFFFAOYSA-N C1=CN=CC1 Chemical compound C1=CN=CC1 VXIKDBJPBRMXBP-UHFFFAOYSA-N 0.000 description 8
- CJUZSHFESXBSRT-UHFFFAOYSA-N CC1=CN=CC1 Chemical compound CC1=CN=CC1 CJUZSHFESXBSRT-UHFFFAOYSA-N 0.000 description 5
- AOBIOSPNXBMOAT-UHFFFAOYSA-N C(COCC1CO1)OCC1CO1 Chemical compound C(COCC1CO1)OCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 4
- KATAXDCYPGGJNJ-UHFFFAOYSA-N OC(COCC1CO1)COCC1CO1 Chemical compound OC(COCC1CO1)COCC1CO1 KATAXDCYPGGJNJ-UHFFFAOYSA-N 0.000 description 4
- LFKLPJRVSHJZPL-UHFFFAOYSA-N C(CCC1CO1)CC1CO1 Chemical compound C(CCC1CO1)CC1CO1 LFKLPJRVSHJZPL-UHFFFAOYSA-N 0.000 description 3
- NOYAONJZIKIZFE-UHFFFAOYSA-N C1=CC=C(C2=NC=CC2)C=C1 Chemical compound C1=CC=C(C2=NC=CC2)C=C1 NOYAONJZIKIZFE-UHFFFAOYSA-N 0.000 description 2
- VGFWPVZAUFUHDD-UHFFFAOYSA-N CC1=NC=CC1 Chemical compound CC1=NC=CC1 VGFWPVZAUFUHDD-UHFFFAOYSA-N 0.000 description 2
- ADMYRXFOCKPUJU-UHFFFAOYSA-N CCCCC1=NC=C(CO)C1 Chemical compound CCCCC1=NC=C(CO)C1 ADMYRXFOCKPUJU-UHFFFAOYSA-N 0.000 description 2
- FYDFPILOYQPFJT-UHFFFAOYSA-N OCC1=CN=CC1 Chemical compound OCC1=CN=CC1 FYDFPILOYQPFJT-UHFFFAOYSA-N 0.000 description 2
- XHLKOHSAWQPOFO-UHFFFAOYSA-N c1c(-c2ccccc2)[nH]cn1 Chemical compound c1c(-c2ccccc2)[nH]cn1 XHLKOHSAWQPOFO-UHFFFAOYSA-N 0.000 description 2
- HTJFSXYVAKSPNF-UHFFFAOYSA-N C(CC1CO1)C1CO1 Chemical compound C(CC1CO1)C1CO1 HTJFSXYVAKSPNF-UHFFFAOYSA-N 0.000 description 1
- ZHRGFOJIGHHQDU-UHFFFAOYSA-N C.C.CC1OC1CCCC1OC1C Chemical compound C.C.CC1OC1CCCC1OC1C ZHRGFOJIGHHQDU-UHFFFAOYSA-N 0.000 description 1
- USGYMDAUQBQWFU-UHFFFAOYSA-N C1CC2OC2CCC2OC12 Chemical compound C1CC2OC2CCC2OC12 USGYMDAUQBQWFU-UHFFFAOYSA-N 0.000 description 1
- KUAUJXBLDYVELT-UHFFFAOYSA-N CC(C)(COCC1CO1)COCC1CO1 Chemical compound CC(C)(COCC1CO1)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 1
- NODHVLZFPYZSMP-UHFFFAOYSA-N CC.CC1OC1COC1=CC=C(CC2=CC=C(OCC3OC3C)C=C2)C=C1.CC1OC1COC1=CC=CC(OCC2OC2C)=C1 Chemical compound CC.CC1OC1COC1=CC=C(CC2=CC=C(OCC3OC3C)C=C2)C=C1.CC1OC1COC1=CC=CC(OCC2OC2C)=C1 NODHVLZFPYZSMP-UHFFFAOYSA-N 0.000 description 1
- MNNVMVMDTZASRJ-UHFFFAOYSA-N CC1OC1COCCCOC1=CC=C(C(C)(C)C2=CC=C(OCCCOCC3OC3C)C=C2)C=C1 Chemical compound CC1OC1COCCCOC1=CC=C(C(C)(C)C2=CC=C(OCCCOCC3OC3C)C=C2)C=C1 MNNVMVMDTZASRJ-UHFFFAOYSA-N 0.000 description 1
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N Cc1cnc(C)[nH]1 Chemical compound Cc1cnc(C)[nH]1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D233/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings
- C07D233/54—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members
- C07D233/56—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms
- C07D233/60—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms with hydrocarbon radicals, substituted by oxygen or sulfur atoms, attached to ring nitrogen atoms
Definitions
- leveling agents used in copper plating baths provide better leveling of the deposit across the substrate surface but tend to worsen the throwing power of the electroplating bath. Throwing power is defined as the ratio of the hole center copper deposit thickness to its thickness at the surface.
- Newer PCBs are being manufactured that contain both through-holes and blind vias. Current bath additives, in particular current leveling agents, do not provide level copper deposits on the substrate surface and fill through-holes and/or fill blind vias effectively.
- the present invention provides a reaction product of one or more imidazole compounds with one or more epoxide-containing compounds; wherein at least one imidazole compound has the formula
- the present invention also provides a copper electroplating bath including: a source of copper ions, an electrolyte, and a leveling agent, wherein the leveling agent is a reaction product of one or more imidazole compounds with one or more epoxide-containing compounds; wherein at least one imidazole compound has the formula
- feature refers to the geometries on a substrate.
- aperture refers to recessed features including through-holes and blind vias.
- plat refers to metal electroplating.
- Deposition and “plating” are used interchangeably throughout this specification.
- Halide refers to fluoride, chloride, bromide and iodide.
- halo refers to fluoro, chloro, bromo and iodo.
- alkyl includes linear, branched and cyclic alkyl.
- Accelelerator refers to an organic additive that increases the plating rate of the electroplating bath.
- Preferred acids include sulfuric acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, and mixtures thereof.
- the acids are typically present in an amount in the range of from 1 to 300 g/L, preferably from 5 to 250 g/L, and more preferably from 10 to 225 g/L.
- Electrolytes are generally commercially available from a variety of sources and may be used without further purification.
- R 1 , R 2 and R 3 are independently chosen from H, (C 1- C 12 )alkyl, (C 2 -C 12 )alkenyl, and aryl and provided that R 1 and R 2 are not both H. That is, the reaction products contain at least one imidazole wherein at least one of R 1 and R 2 is (C 1 -C 12 )alkyl, (C 2 -C 12 )alkenyl, or aryl. Such imidazole compound is substituted with a (C 1- C 12 )alkyl, (C 2 -C 12 )alkenyl, or aryl at the 4- and/or 5-position.
- Y ⁇ H and X ⁇ Cl or Br and more preferably, X ⁇ Cl.
- the percent cracking was determined according to the industry standard procedure, IPC-TM-650-2.6.8. Thermal Stress, Plated-Through Holes, published by IPC (Northbrook, Ill., USA), dated May, 2004, revision E. The lower the percentage of cracking, the better the plating bath performed.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/661,301 US20110220512A1 (en) | 2010-03-15 | 2010-03-15 | Plating bath and method |
JP2011055905A JP6054594B2 (ja) | 2010-03-15 | 2011-03-14 | めっき浴および方法 |
EP11158231A EP2366692B1 (fr) | 2010-03-15 | 2011-03-15 | Bain et méthode de placage électrolytique au cuivre |
CN2011101158165A CN102250319A (zh) | 2010-03-15 | 2011-03-15 | 电镀液及电镀方法 |
CN201210395534.XA CN102888629B (zh) | 2010-03-15 | 2011-03-15 | 电镀液及电镀方法 |
KR1020110022943A KR101739410B1 (ko) | 2010-03-15 | 2011-03-15 | 도금조 및 방법 |
TW100108653A TWI428326B (zh) | 2010-03-15 | 2011-03-15 | 鍍覆浴及方法 |
US13/207,658 US8268158B2 (en) | 2010-03-15 | 2011-08-11 | Plating bath and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/661,301 US20110220512A1 (en) | 2010-03-15 | 2010-03-15 | Plating bath and method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/207,658 Division US8268158B2 (en) | 2010-03-15 | 2011-08-11 | Plating bath and method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110220512A1 true US20110220512A1 (en) | 2011-09-15 |
Family
ID=43984124
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/661,301 Abandoned US20110220512A1 (en) | 2010-03-15 | 2010-03-15 | Plating bath and method |
US13/207,658 Active US8268158B2 (en) | 2010-03-15 | 2011-08-11 | Plating bath and method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/207,658 Active US8268158B2 (en) | 2010-03-15 | 2011-08-11 | Plating bath and method |
Country Status (6)
Country | Link |
---|---|
US (2) | US20110220512A1 (fr) |
EP (1) | EP2366692B1 (fr) |
JP (1) | JP6054594B2 (fr) |
KR (1) | KR101739410B1 (fr) |
CN (2) | CN102888629B (fr) |
TW (1) | TWI428326B (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110220513A1 (en) * | 2010-03-15 | 2011-09-15 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US20110220514A1 (en) * | 2010-03-15 | 2011-09-15 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
EP2586893A2 (fr) | 2011-10-24 | 2013-05-01 | Rohm and Haas Electronic Materials LLC | Appareil et bain de placage de cuivre |
US9562299B2 (en) | 2013-01-16 | 2017-02-07 | Samsung Electronics Co., Ltd. | Copper electroplating solution and copper electroplating apparatus |
US10100421B2 (en) | 2015-08-06 | 2018-10-16 | Dow Global Technologies Llc | Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole and bisepoxide compounds |
US10405422B2 (en) * | 2012-07-09 | 2019-09-03 | Shikoku Chemicals Corporation | Copper film-forming agent and method for forming copper film |
US10718059B2 (en) | 2017-07-10 | 2020-07-21 | Rohm And Haas Electronic Materials Llc | Nickel electroplating compositions with cationic polymers and methods of electroplating nickel |
CN114381769A (zh) * | 2021-12-24 | 2022-04-22 | 广州市慧科高新材料科技有限公司 | 一种超速填孔镀铜整平剂的合成方法以及应用 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20140238868A1 (en) | 2013-02-25 | 2014-08-28 | Dow Global Technologies Llc | Electroplating bath |
US9598787B2 (en) * | 2013-03-14 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
US20140262801A1 (en) * | 2013-03-14 | 2014-09-18 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes |
US9403762B2 (en) * | 2013-11-21 | 2016-08-02 | Rohm And Haas Electronic Materials Llc | Reaction products of guanidine compounds or salts thereof, polyepoxides and polyhalogens |
US9273407B2 (en) | 2014-03-17 | 2016-03-01 | Hong Kong Applied Science and Technology Research Institute Company Limited | Additive for electrodeposition |
CN104005061B (zh) * | 2014-06-05 | 2016-05-18 | 中节能太阳能科技有限公司 | 一种用于太阳能电池前电极电镀铜的负整平剂 |
US9809891B2 (en) | 2014-06-30 | 2017-11-07 | Rohm And Haas Electronic Materials Llc | Plating method |
US10154598B2 (en) * | 2014-10-13 | 2018-12-11 | Rohm And Haas Electronic Materials Llc | Filling through-holes |
US9725816B2 (en) | 2014-12-30 | 2017-08-08 | Rohm And Haas Electronic Materials Llc | Amino sulfonic acid based polymers for copper electroplating |
US9783905B2 (en) | 2014-12-30 | 2017-10-10 | Rohm and Haas Electronic Mateirals LLC | Reaction products of amino acids and epoxies |
US9611560B2 (en) | 2014-12-30 | 2017-04-04 | Rohm And Haas Electronic Materials Llc | Sulfonamide based polymers for copper electroplating |
CN105002527B (zh) * | 2015-07-31 | 2017-06-16 | 广东光华科技股份有限公司 | 整平剂溶液及其制备方法和应用 |
EP3135709B1 (fr) * | 2015-08-31 | 2018-01-10 | ATOTECH Deutschland GmbH | Polymères d'urée imidazoyle et leur utilisation dans des compositions de bains de placage de métaux ou d'alliages de métaux |
US10988852B2 (en) | 2015-10-27 | 2021-04-27 | Rohm And Haas Electronic Materials Llc | Method of electroplating copper into a via on a substrate from an acid copper electroplating bath |
US10508357B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
US10512174B2 (en) | 2016-02-15 | 2019-12-17 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids and other defects |
US10190228B2 (en) * | 2016-03-29 | 2019-01-29 | Rohm And Haas Electronic Materials Llc | Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features |
CN117385426A (zh) * | 2016-09-22 | 2024-01-12 | 麦克德米德乐思公司 | 在微电子件中的铜的电沉积 |
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CN107217283B (zh) * | 2017-07-25 | 2018-11-16 | 上海新阳半导体材料股份有限公司 | 整平剂、含其的金属电镀组合物、制备方法及应用 |
CN111892706A (zh) * | 2020-07-23 | 2020-11-06 | 中国科学院大学温州研究院(温州生物材料与工程研究所) | 一种peg偶联杂环化合物及其在酸性光亮镀铜中的应用 |
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KR102339867B1 (ko) * | 2021-07-30 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물 |
KR102339868B1 (ko) * | 2021-07-30 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물 |
CN115894908A (zh) * | 2021-09-30 | 2023-04-04 | 华为技术有限公司 | 聚合物、整平剂及其制备方法、电镀液和电镀方法 |
US20230279577A1 (en) | 2022-03-04 | 2023-09-07 | Rohm And Haas Electronic Materials Llc | Method of filling through-holes to reduce voids |
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US8268157B2 (en) * | 2010-03-15 | 2012-09-18 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
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- 2010-03-15 US US12/661,301 patent/US20110220512A1/en not_active Abandoned
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2011
- 2011-03-14 JP JP2011055905A patent/JP6054594B2/ja active Active
- 2011-03-15 KR KR1020110022943A patent/KR101739410B1/ko active IP Right Grant
- 2011-03-15 EP EP11158231A patent/EP2366692B1/fr active Active
- 2011-03-15 TW TW100108653A patent/TWI428326B/zh active
- 2011-03-15 CN CN201210395534.XA patent/CN102888629B/zh active Active
- 2011-03-15 CN CN2011101158165A patent/CN102250319A/zh active Pending
- 2011-08-11 US US13/207,658 patent/US8268158B2/en active Active
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US20110220513A1 (en) * | 2010-03-15 | 2011-09-15 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US20110220514A1 (en) * | 2010-03-15 | 2011-09-15 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US8262895B2 (en) | 2010-03-15 | 2012-09-11 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US8268157B2 (en) | 2010-03-15 | 2012-09-18 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
EP2586893A2 (fr) | 2011-10-24 | 2013-05-01 | Rohm and Haas Electronic Materials LLC | Appareil et bain de placage de cuivre |
US8454815B2 (en) | 2011-10-24 | 2013-06-04 | Rohm And Haas Electronics Materials Llc | Plating bath and method |
US10405422B2 (en) * | 2012-07-09 | 2019-09-03 | Shikoku Chemicals Corporation | Copper film-forming agent and method for forming copper film |
US9562299B2 (en) | 2013-01-16 | 2017-02-07 | Samsung Electronics Co., Ltd. | Copper electroplating solution and copper electroplating apparatus |
US10100421B2 (en) | 2015-08-06 | 2018-10-16 | Dow Global Technologies Llc | Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole and bisepoxide compounds |
US10718059B2 (en) | 2017-07-10 | 2020-07-21 | Rohm And Haas Electronic Materials Llc | Nickel electroplating compositions with cationic polymers and methods of electroplating nickel |
CN114381769A (zh) * | 2021-12-24 | 2022-04-22 | 广州市慧科高新材料科技有限公司 | 一种超速填孔镀铜整平剂的合成方法以及应用 |
Also Published As
Publication number | Publication date |
---|---|
KR101739410B1 (ko) | 2017-05-24 |
US8268158B2 (en) | 2012-09-18 |
CN102888629A (zh) | 2013-01-23 |
TWI428326B (zh) | 2014-03-01 |
TW201139382A (en) | 2011-11-16 |
CN102888629B (zh) | 2014-12-31 |
EP2366692A2 (fr) | 2011-09-21 |
EP2366692B1 (fr) | 2013-02-20 |
US20110290660A1 (en) | 2011-12-01 |
JP2011190260A (ja) | 2011-09-29 |
KR20110103891A (ko) | 2011-09-21 |
EP2366692A3 (fr) | 2011-11-02 |
CN102250319A (zh) | 2011-11-23 |
JP6054594B2 (ja) | 2016-12-27 |
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