US20110100808A1 - Cylindrical sputtering target and process for producing the same - Google Patents

Cylindrical sputtering target and process for producing the same Download PDF

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US20110100808A1
US20110100808A1 US12/997,043 US99704309A US2011100808A1 US 20110100808 A1 US20110100808 A1 US 20110100808A1 US 99704309 A US99704309 A US 99704309A US 2011100808 A1 US2011100808 A1 US 2011100808A1
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bonding material
cylindrical
target
molten
cavity
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Shigehisa Todoko
Kimiaki Tamano
Kenichi Itoh
Tetsuo Shibutami
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Tosoh Corp
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Tosoh Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Definitions

  • the present invention relates to a cylindrical sputtering target used in a magnetron rotary cathode sputtering apparatus etc, and a process for producing the same.
  • a magnetron rotary cathode sputtering apparatus has a magnetic field-generating device on the inside of a cylindrical sputtering target and is designed to carry out sputtering while cooling from the inside of the target and rotating the target, and the entire surface of the target material undergoes erosion and is uniformly shaved off, whereby it is possible to obtain a remarkably high target utilization ratio (at least 60%) as compared with the utilization ratio (from 20 to 30%) of a conventional planar magnetron sputtering apparatus. Further, by rotating the target, it is possible to input a large power per unit area as compared with a conventional planar magnetron sputtering apparatus, whereby a high film deposition rate can be obtained (see Patent Document 1).
  • an arc spray method and an HIP method not only require an expensive apparatus to carry out these methods and a large operating cost, but also are uneconomical since a cylindrical base material is made integrally with a cylindrical target material, making it difficult to reuse the cylindrical base material. Further, these methods are likely to be subjected to peeling or cracking attributable to the difference in the thermal expansion coefficient between both materials.
  • this method has caused a decrease in volume attributable to a phase change of the solder material from a liquid state to a solid state, and a decrease in volume attributable to cooling from the melting point of the solder material to normal temperature, whereby the occurrence of bonding layer defect attributable to such a decrease in volume has made thermal conduction poor, has caused a crack and a chip, or has generated extraordinary discharge due to poor electrical conduction in some cases. Further, this method has produced a needle-like protrusion called a nodule during sputtering, whereby extraordinary discharge is generated or particles are produced in some cases.
  • the volume decreases by 2.7% when the solder material is solidified at 156.6° C.
  • the volume decreases by 1.2% when the solder material is cooled from 156.6° C. to 25° C.
  • a cylindrical ceramic target material generally has a smaller thermal expansion coefficient than a cylindrical base material. For this reason, when a bonding material is cooled from its melting point to normal temperature, the volume of a cavity defined by a cylindrical ceramic target material and a cylindrical base material is increased to causes bonding defects beyond expectation based on such a decrease in volume of the above-mentioned solder material made of In.
  • Patent Document 1 JP-A-58-500174
  • Patent Document 2 JP-A-05-222527
  • Patent Document 3 JP-A-05-230645
  • Patent Document 4 Japanese Patent No. 3618005
  • the present inventors have conducted an extensive study to accomplish the above-mentioned object. As a result, they have accomplished the present invention based on the finding that it is possible to significantly reduce the occurrence of bonding layer defect by filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity.
  • the inventors have conducted an extensive study, focusing attention on the relationship between the occurrence of a crack, a chip, extraordinary discharge and a nodule, and the state of a bonding layer in a cylindrical sputtering target, which is identified by means of an X-ray radiograph.
  • the present invention provides a cylindrical ceramic sputtering target, which has a bonding material filled in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm 2 or less per 50 cm 2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm 2 or less.
  • the present invention also provides a process for producing a cylindrical ceramic sputtering target, which has a bonding material filled in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, characterized in that the process includes filling a molten bonding material in the cavity, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling.
  • a cylindrical sputtering target which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule.
  • the target according to the present invention it is possible to attain film deposition in a transparent conductive film etc. with a high target utilization ratio and with a high film deposition rate.
  • FIG. 1 is a cross-sectional view of a cylindrical sputtering target according to the present invention, taken along a plane containing the central axis thereof.
  • the cavity defined by a cylindrical ceramic target material and a cylindrical base material means a portion indicated by reference numeral 3 in FIG. 1 , where a bonding material is filled therein.
  • the X-ray radiograph of the bonding material according to the present invention is taken for the purpose of inspecting defect in the bonding material.
  • the X-ray radiograph may be taken by applying an X-ray from outside a cylindrical sputtering target by means of an X-ray irradiation system, and recording an image on a radiographic film affixed on an inner side of the cylindrical base material.
  • a plurality of radiographic films may be used to record images, taking into account the curvature of the cylindrical sputtering target.
  • the total area of portions where no bonding material exists may be found by various kinds of methods.
  • the cylindrical ceramic sputtering target according to the present invention is characterized in that the total area of portions where no bonding material exists is 10 cm 2 or less per 50 cm 2 of X-ray radiograph area.
  • the total area is preferably 2 cm 2 or less per 50 cm 2 of X-ray radiograph area, more preferably 1 cm 2 or less per 50 cm 2 of X-ray radiograph area.
  • the maximum area of the portions where no bonding material exists may be measured in a similar way by the above-mentioned method.
  • the cylindering sputtering target according to the present invention is characterized in that the maximum area of the portions where no bonding material exists is 9 cm 2 or less as observed by an X-ray radiograph.
  • the maximum area of the portions where no bonding material exists is preferably 1 cm 2 or less.
  • the maximum area means the maximum value among the area values obtained by finding the areas of the respective portions.
  • the volume of the cavity at the melting point of the bonding material means a volume in such a state that the bonding material can be filled therein in a molten state at the melting point.
  • the value of the volume of the cavity may be found based on the melting point of the bonding material, and the thermal expansion coefficient and the dimensions of each of the cylindrical target material and a cylindrical base material.
  • the cylindrical target material is made of a plurality of parts, and when an intermediate member etc. is inserted between adjacent divided parts, the value of the cavity is found, regarding the entire volume containing such an intermediate member as a single cylindrical target.
  • the volume of the bonding material that has been filled in the cavity and has a temperature of 25° C. may be found by dividing an increased weight attributable to the filling of the bonding material by the density of the bonding material at 25° C.
  • Volume proportion (%) (the volume of the bonding material that has been filled in the cavity and has a temperature of 25° C)/(the volume of the cavity at the melting point of the bonding material) ⁇ 100
  • the proportion of both volumes has had a value of from 94 to 96% at most because of a density difference between the bonding material in a liquid phase (molten) state and the bonding material in a cooled solid state, and thermal expansion, although the proportion varies according to what the bonding material is made of.
  • the proportion has been actually a lower value than the above-mentioned values since foams are involved during filling.
  • the cylindrical sputtering target according to the present invention is characterized in that the proportion of both volumes is at least 96%. It is possible to reduce the occurrence of a crack, a chip, extraordinary discharge, a nodule etc. caused by poor thermal conduction or poor electrical conduction attributable to defect in the bonding layer by reducing the occurrence of the defect in the bonding layer up to a high volume proportion that has not been attained heretofore as described above.
  • the proportion of both volumes is preferably at least 98 %, more preferably at least 100%.
  • both of the total area and the maximum area of the portions where no bonding material exists as observed by an X-ray radiograph satisfy the above-mentioned conditions as described above.
  • the target according to the present invention preferably satisfies the above-mentioned volume proportion as well.
  • Such a cylindrical sputtering target can further reduce the occurrence of a crack, a chip, extraordinary discharge and a nodule.
  • the bonding material materials generally employed as a solder material are applicable.
  • the bonding material is preferably made of a solder material having a low melting point. Specific examples of the material include In, an In alloy, Sn and a Sn alloy.
  • the bonding material is preferably made of In and an In alloy.
  • the target material may be, for example, an oxide, which contains as main component at least one selected from the group consisting of In, Sn, Zn, Al, Ta, Nb and Ti.
  • Specific examples include ITO (indium tin oxide), AZO (aluminum zinc oxide), IZO (indium zinc oxide), Ta 2 O 5 , Nb 2 O 5 and TiO 2 .
  • ITO and AZO are preferred as the cylindrical ceramic target material according to the present invention since such materials are susceptible to the occurrence a crack and a chip and since the target is employed for the purpose of producing a flat panel display having a problem of occurrence of a nodule.
  • cylindrical base material examples include Cu, Ti, Al, Mo, an alloy containing at least one of these metals, and SUS.
  • the cylindrical base material preferably has a proper thermal conduction, electric conduction and strength. Among them, Ti and SUS are preferred as the cylindrical base material.
  • the cylindrical ceramic sputtering target according to the present invention may be produced by the method according to the present invention.
  • Examples include a method for disposing a cylindrical target material outside a cylindrical base material, followed by sealing a lower portion of the gap between the cylindrical base material and the cylindrical target material and pouring a molten bonding material in the gap from an upper portion of the gap, and a method for sealing one end each of a cylindrical target material and a cylindrical base material, and putting the cylindrical base material in the cylindrical target material where a molten bonding material has been introduced.
  • the given vibration has an acceleration of 0.05 G or more, preferably at least 0.1 G, more preferably at least 1 G.
  • the vibration has an amplitude of at least 0.01 mm, preferably at least 0.03 mm.
  • the vibration acceleration and the vibration amplitude are preferably 200 G or less and 1 mm or less, respectively, since it is likely that strong vibration subjects the cylindrical target material to positional shift or the bonding material leaks from the sealed portion.
  • a vibration table or a vibrator may be employed for example.
  • the method wherein the molten bonding material, which has been filled in the cavity defined by the cylindrical target material and the cylindrical base material, starts to be cooled from one end toward the other end in a cylindrical axis direction in sequence, there is the following method.
  • the method may be conducted such that a plurality of heaters are disposed on an outer peripheral side of the cylindrical target material so as to be independently temperature-controlled, and the entire cylindrical target material is heated by the heaters, followed by starting cooling the bonding material by reducing the intensity of heating or stopping heating from one end toward the other end in a cylindrical axial direction in sequence. In this way, the bonding material is sequentially cooled from the one end toward the other end, being solidified.
  • the cooling rate is preferably about 0.05 to 3° C./min, more preferably 0.5 to 1.5° C./min since too low a cooling rate lowers productivity while it is likely that too high a cooling rate causes the cylindrical target material to be subjected to a crack due to thermal shock.
  • the temperature gradient when cooling is sequentially conducted from the one end toward the other end, the temperature gradient is preferably about 0.1 to 3° C./cm, more preferably 0.4 to 1° C./cm since too small a temperature gradient makes the temperature control different while too high a temperature gradient is likely to cause the cylindrical target material to be subjected to a crack due to thermal shock. It should be noted that the temperature control is conducted so as to avoid a case where the bonding material is once cooled to its melting point or less, followed by being heated beyond the melting point again. In this way, it is possible to further reduce the occurrence of the bonding layer defect.
  • Examples of the method for further supplying a molten bonding material during cooling the molten bonding material filled in the cavity defined by the cylindrical ceramic target material and the cylindrical base material include a method for arbitrarily replenishing the molten bonding material and a method for disposing a bonding material supply portion on a top portion of the cavity to store the molten bonding material and supplying the molten bonding material from the supply portion.
  • a cylindrical jig which has a slightly larger inner diameter than the outer diameter of the cylindrical base material may be coupled to a top portion of the cylindrical target material so as to store the molten bonding material in a space defined by the cylindrical jig and the cylindrical base material for example.
  • Two cylindrical target materials which were made of ITO and had an outer diameter of 98 mm, an inner diameter of 78 mm and a length of 175 mm, and one cylindrical base material, which was made of SUS 304 and had an outer diameter of 76 mm, an inner diameter of 70 mm and a length of 470 mm, were prepared.
  • One of the cylindrical target materials and the cylindrical base material were held by a jig such that the bottom end of a lower cylindrical target material was located at a position of 60 mm lower than the bottom end of the cylindrical base material.
  • a sheet made of Teflon (trademark), the other cylindrical target material, a sheet made of Teflon (trademark) and an aluminum jig (having an outer diameter of 98 mm, an inner diameter of 78 mm and a length of 40 mm) were stacked on the one cylindrical target material in this order.
  • An O-ring having a heat resistance (O-ring made of a silicone resin) was disposed on the bottom end of the lower cylindrical target material, and a load of 50 kgf was applied in a cylindrical axial direction from a top portion of the aluminum jig.
  • Four ribbon heaters were wound on outer sides of the cylindrical target materials, and one ribbon heater was wound on the aluminum jig, followed by heating the heaters to 180° C.
  • molten In was poured into from the top of the gap between the aluminum jig and the cylindrical base material.
  • an electric vibrator was employed to vibrate the cylindrical base material such that the molten In sufficiently spread into every corner.
  • the vibration acceleration and the vibration amplitude were from 50 to 100 G and from 0.1 to 0.2 mm, respectively.
  • the temperature given by the four ribbon hearers attached to the cylindrical target materials were lowered by 0.42° C./min at intervals of 30 minutes from a lower portion toward an upper portion of the cylindrical target materials, whereby the temperatures of each cylindrical target material was lowered to 130° C.
  • the aluminum jig was heated so as to be kept at 180° C., whereby the In material filled in between the aluminum jig and the cylindrical base material made of SUS 304 kept a molten state.
  • the aluminum jig corresponds to the bonding material supply portion to store the molten bonding material.
  • the aluminum jig was also cooled down 130° C., followed by cooling down all these members to 25° C. Then, all these members were heated to 50° C. again, and the sheets made of Teflon (trademark) inserted between the cylindrical target materials and between the upper cylindrical target material and the aluminum jig were removed. After that, all these members were cooled down to 25° C., and the aluminum jig and the In material filled in between the aluminum jig and the cylindrical base material made of SUS304 were removed, whereby a cylindrical sputtering target was obtained. The volume ratio of the In material at 25° C.
  • An X-ray radiograph was taken by applying an X-ray from outside the cylindrical sputtering target by means of an X-ray irradiation system, and recording an image on a radiographic film affixed on an inner side of the cylindrical base material. It was revealed that the maximum area of portions where no bonding material existed was 0.4 cm 2 and that the total area of the portions where no bonding material existed was 0.9 cm 2 per 50 cm 2 of X-ray radiograph area.
  • a discharge test was carried out for the cylindrical sputtering target under the conditions of a rotation number of 6 rpm, a sputtering pressure of 0.4 Pa and a power density of 4.0 W/ cm 2 .
  • the test results showed that neither a nodule nor extraordinary discharge was generated and that neither a crack nor a chip was observed until the life end.
  • An ITO cylindrical sputtering target was fabricated in the same manner as in Example 1 except that the bonding material was made of InSn, the bonding material had a temperature of 160° C. when being poured, and the first dropping temperature was set at 100° C.
  • the volume ratio of the InSn material at 25° C. that was filled in the cavity was 98.3% with respect to the volume of the cavity that was defined by each cylindrical target material and the cylindrical base material and had a temperature equal to the melting point of InSn.
  • An X-ray radiograph was taken in the same manner as in Example 1.
  • An AZO cylindrical sputtering target was fabricated in the same manner as in Example 1 for that a cylindrical target material was made of AZO.
  • the volume ratio of the In material at 25° C. that was filled in the cavity was 100.2% with respect to the volume of the cavity that was defined by each cylindrical target material and the cylindrical base material and had a temperature equal to the melting point of In.
  • An X-ray radiograph was taken in the same manner as in Example 1. It was revealed that the maximum area of portions where no bonding material existed was 0.5 cm 2 and that the total area of the portions where no bonding material existed was 1.2 cm 2 per 50 cm 2 of X-ray radiograph area.
  • a discharge test was carried out for this AZO cylindrical sputtering target under the same conditions as in Example 1. The test results showed that neither a nodule nor extraordinary discharge was generated and that neither a crack nor a chip was observed until the life end.
  • An ITO cylindrical sputtering target was fabricated in the same manner as in Example 1 except that weak vibration was given when pouring the bonding material.
  • the vibration acceleration and the vibration amplitude were from 0.1 to 6 G and from 0.01 to 0.03 mm, respectively.
  • the volume ratio of the In material at 25° C. that was filled in the cavity was 96.8% with respect to the volume of the cavity that was defined by each cylindrical target material and the cylindrical base material and had a temperature equal to the melting point of In.
  • An X-ray radiograph was taken in the same manner as in Example 1. It was revealed that the maximum area of portions where no bonding material existed was 1.5 cm 2 and that the total area of the portions where no bonding material existed was 3.1 cm 2 per 50 cm 2 of X-ray radiograph area.
  • a discharge test was carried out for this ITO cylindrical sputtering target under the same conditions as in Example 1. The test results showed that neither a nodule nor extraordinary discharge was generated and that neither a crack nor a chip was observed until the life end.
  • An ITO cylindrical sputtering target was fabricated in the same manner as in Example 1 except that no aluminum jig was employed.
  • the volume ratio of the In material at 25° C. that was filled in the cavity was 93.2% with respect to the volume of the cavity that was defined by each cylindrical target material and the cylindrical base material and had a temperature equal to the melting point of In.
  • An X-ray radiograph was taken in the same manner as in Example 1. It was revealed that the maximum area of portions where no bonding material existed was 7.0 cm 2 and that the total area of the portions where no bonding material existed was 7.5 cm 2 per 50 cm 2 of X-ray radiograph area.
  • a discharge test was carried out for this ITO cylindrical sputtering target under the same conditions as in Example 1. The test results showed that although a quite small number of nodules were produced, such a quite small number of nodules had no adverse effect to use, and that neither a crack nor a chip was observed until the life end.
  • An ITO cylindrical sputtering target was fabricated in the same manner as in Example 1 except that no aluminum jig was employed and the temperatures of the four ribbon heaters on the cylindrical target materials were simultaneously dropped by 0.42° C./min to uniformly cool down each ITO cylindrical target material in its entirety.
  • the volume ratio of the In material at 25° C. that was filled in the cavity was 87.6% with respect to the volume of the cavity that was defined by each cylindrical target material and the cylindrical base material and had a temperature equal to the melting point of In.
  • An X-ray radiograph was taken in the same manner as in Example 1.
  • An ITO cylindrical sputtering target was fabricated in the same manner as in Comparative Example 1 except that no vibration was given when pouring molten In.
  • the volume ratio of the In material at 25° C. that was filled in the cavity was 82.1% with respect to the volume of the cavity that was defined by each cylindrical target material and the cylindrical base material and had a temperature equal to the melting point of In.
  • An X-ray radiograph was taken in the same manner as in Example 1. It was revealed that the maximum area of portions where no bonding material existed was 9.7 cm 2 and that the total area of the portions where no bonding material existed was 12.5 cm 2 per 50 cm 2 of X-ray radiograph area.
  • a discharge test was carried out for this ITO cylindrical sputtering target in the same manner as in Example 1. The test results showed that nodules were produced during discharge, that extraordinary discharge was generated and that a crack occurred in use.
  • the cylindrical ceramic sputtering target produced according to the production method of the present invention can minimize the occurrence of a crack, a chip, extraordinary discharge and a nodule in use, and obtain a high target utilization ratio and a high film deposition rate, being appropriately applied to flat panel displays.

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JP5672066B2 (ja) * 2011-02-25 2015-02-18 東ソー株式会社 円筒形ターゲットの製造方法
CN103814151B (zh) 2011-06-27 2016-01-20 梭莱有限公司 Pvd靶材及其铸造方法
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EP2290121A1 (en) 2011-03-02
KR101631722B1 (ko) 2016-06-17
TWI440732B (zh) 2014-06-11
JP5387118B2 (ja) 2014-01-15
US20160141159A1 (en) 2016-05-19
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TW201012957A (en) 2010-04-01
EP2290121B2 (en) 2018-03-21
EP2290121A4 (en) 2011-11-30
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WO2009151060A1 (ja) 2009-12-17
CN102016111A (zh) 2011-04-13

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