US20100206338A1 - Device and method for removing liquid from a surface of a disc-like article - Google Patents

Device and method for removing liquid from a surface of a disc-like article Download PDF

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Publication number
US20100206338A1
US20100206338A1 US12/444,093 US44409307A US2010206338A1 US 20100206338 A1 US20100206338 A1 US 20100206338A1 US 44409307 A US44409307 A US 44409307A US 2010206338 A1 US2010206338 A1 US 2010206338A1
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Prior art keywords
gas
dispensing means
liquid
disc
article
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Abandoned
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US12/444,093
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English (en)
Inventor
Harald Kraus
Axel Wittershagen
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Lam Research AG
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SEZ AG
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Publication of US20100206338A1 publication Critical patent/US20100206338A1/en
Assigned to LAM RESEARCH AG reassignment LAM RESEARCH AG CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SEZ AG
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the invention relates to a device for removing liquid from a surface of a disc-like article. More particularly the invention refers to a device for fluid treating a disc-like article to remove liquid from a surface.
  • liquid removing methods are known in semiconductor industry. Many liquid removing methods use a defined liquid/gas boundary layer. Such liquid removing methods are better known as Marangoni drying methods.
  • U.S. Pat. No. 5,882,433 discloses a combined Marangoni spin drying method and a device therefore. Thereby deionised water is dispensed onto a wafer and simultaneously a mixture of nitrogen with 2-propanol is dispensed.
  • the 2-propanol in the nitrogen shall influence the liquid/gas boundary layer in that a surface gradient shall occur, which leads to the effect that the water runs of the wafer without leaving any droplets on the wafer (Marangoni Effect).
  • the gas dispenser directly follows the liquid dispenser while the liquid dispenser is moved from the centre to the edge of the wafer and while the wafer is spun and thereby gas directly displaces the liquid from the wafer.
  • This liquid removing method is however very difficult to control.
  • the distance of the liquid dispenser to the gas dispenser, the temperature, the gas flow, and the liquid flow are critical parameters.
  • the process window is very narrow especially for disc-shaped articles of larger diameter such as 300 mm semiconductor wafers and flat panel displays as well as for semiconductor wafers, which have a higher integration e.g. 90 nm 65 nm device size.
  • the invention meets the objects by providing a device for removing liquid from a surface of a disc-like article comprising
  • Such rotating means can be a spin chuck such as a vacuum chuck, a pin chuck or a Bernoulli-chuck or can be rollers which circumferentially touch the disc-like article and drive the disc-like article.
  • Liquid dispensing means typically comprise a piping liquid pressure means (e.g. a pump or a container located at a higher level) and at least one discharge nozzle with at least one orifice.
  • the discharge nozzle is directed towards the surface of the disc-like article.
  • the nozzle is directed towards the surface so that liquid is dispensed perpendicularly onto the surface.
  • a smooth shape of the orifice is selected (e.g. a circular or oval orifice) so that liquid is dispensed onto the disc-like article without splashing.
  • the means for separately controlling the gas flows of the first and the second gas dispensing means are in one embodiment solenoid valves which are switched by a controller (e.g. computer).
  • controller e.g. computer
  • Such controller has the information where the liquid and the gas dispensing means are located at a certain moment and thence can decide when the second gas dispensing means can be switched on when the liquid dispensing means passes a certain position.
  • the means for separately controlling can even increase and decrease the gas volume flows.
  • the moving means for moving the liquid dispensing means and the second gas dispensing means across the disc-like article are configured so that the second gas dispensing means follows the liquid dispensing means.
  • This can be carried out by mounting both the second gas dispensing means and the liquid dispensing means onto the same nozzle assembly or they are mounted on different media arms. Mounting the nozzles on different arms gives the advantage that the distance between the liquid dispensing means and the second gas dispensing means can be varied during the process or from process to process.
  • the first gas dispensing means can be fixed in the centre of rotational movement and thus the first gas dispensing means does not follow the liquid dispensing means.
  • the moving means further comprise means for moving the first dispensing means across the disc-like article so that the first gas dispensing means follows the liquid dispensing means.
  • all three gas dispensing means may be mounted on different arms or may belong to the same nozzle assembly.
  • the sum of the cross-sectional areas of the orifice of the first and second gas dispensing means have a ratio 1:1.1 to 1:20.
  • a preferred ratio range is 1:2 to 1:10.
  • Yet another preferred embodiment of the first gas dispensing means has a sum of cross-sectional areas of less than 20 mm 2 , which results in a small area of impact of the first gas.
  • the second gas dispensing means preferably has a sum of cross-sectional areas of more than 5 mm 2 , which allows covering a great area with the second gas.
  • Said second gas dispensing means may comprise a slit-shaped nozzle wherein the slit is substantially perpendicularly arranged to the radius of the rotational movement, whereby the second gas dispensing means dispenses a gas curtain.
  • substantially perpendicular in this case shall mean a range of 85° to 95°. This configuration can be achieved by a linear movement of the second gas dispensing means when the movement goes through the centre of rotational movement and the slit-shaped nozzle is mounted substantially perpendicular with respect to the linear movement.
  • a counter movement of the nozzle has to be carried out in order to maintain the slit-shaped nozzle in a position substantially perpendicularly to the radius of the rotational movement.
  • the second gas dispensing means may comprise an array of nozzles which are arranged in a substantially straight line. This line is substantially perpendicular to the moving direction of the second gas dispensing means, whereby the nozzles dispense a gas curtain.
  • second gas dispensing means and the liquid dispensing means may be fixed to each other with a distance d 2 between the second gas dispensing means and the liquid dispensing means.
  • the alignment of the first gas dispensing means, the second gas dispensing means and the liquid dispensing means is fixed to each other with a distance d 1 between the first gas dispensing means and the liquid dispensing means.
  • the difference of distance d 2 and the distance d 1 (d 2 ⁇ d 1 ) should range from ⁇ 1 cm to +1 cm.
  • a second aspect of the invention is a method for removing liquid from a surface of a disc-like article comprising:
  • the supplying of the second gas flow may start after the first gas flow has started or if the second gas flow is started not after the first gas flow has started the second gas flow is increased after the first gas flow has started.
  • the second gas flow could first be at a very low volume flow 0.2 l/min and is increased at a distance from the centre of e.g. 40 mm to 6 l/min.
  • the second gas flow is started when the outer edge of the second gas supply port is at a distance to the centre of the rotational movement of at least 20 mm.
  • the gas velocity of the first gas flow is at least double of the gas velocity of the second gas flow.
  • the gas volume flow of the first gas flow may not be more than half of the gas volume flow of the second gas flow.
  • the gas velocity v 1 of the first gas flow is minimum 3 m/s.
  • the gas velocity v 2 of the second gas flow is maximum 5 m/s.
  • the rotation speed decreases when the liquid dispensing means moves towards the edge.
  • the rotation speed increases e.g. towards the edge.
  • the moving speed at which the liquid dispensing means moves towards the edge decreases when the liquid dispensing means moves towards the edge.
  • a substance decreasing the surface tension of a removing liquid is applied either through the removing liquid or through at least the second gas flow or through both the removing liquid and at least the second gas flow.
  • a surface-active substance can be called a surface-active substance.
  • a surface active substance must be a substance capable of lowering the surface energy (surface tension) of water. This does not necessarily mean that it has to be a tenside or surfactant such as soap. It only shall mean that it shall comprise a molecule, which has a polar and an apolar (non-polar) end (e.g. any kind of alcohol).
  • FIG. 1 shows a schematic view of an embodiment of the invention
  • FIG. 2 shows a schematic bottom view of a nozzle configuration in a first embodiment of the invention
  • FIG. 3 shows a schematic bottom view of a nozzle configuration in a second embodiment of the invention
  • FIG. 4 shows a schematic bottom view of a nozzle configuration in a third embodiment of the invention
  • FIG. 5 shows a schematic bottom view of a nozzle configuration in a fourth embodiment of the invention
  • FIG. 6 shows a schematic cross-sectional view of an embodiment of the invention before the nozzle starts the liquid removing in the centre of a semiconductor wafer (wafer)
  • FIG. 7 shows a schematic cross-sectional view of an embodiment of the invention when the nozzle of the first gas dispensing means starts the liquid removing in the centre of a semiconductor wafer (wafer)
  • FIG. 8 shows a schematic cross-sectional view of an embodiment of the invention well after the nozzle of the first gas dispensing means has started the liquid removing in the centre of a semiconductor wafer (wafer) and is supported by the second gas dispensing means.
  • FIG. 9 shows a schematic top view of an embodiment of the invention well after the nozzle of the first gas dispensing means has started the liquid removing in the centre of a semiconductor wafer (wafer) and is supported by the second gas dispensing means.
  • FIG. 10 is a visualization of a method in a first embodiment of the invention with respect to the position of the nozzle over the wafer, and with respect to the time of supplying liquid, first gas and second gas onto the wafer.
  • FIG. 11 is a visualization of a method in a second embodiment of the invention with respect to the position of the nozzle over the wafer.
  • FIG. 1 shows a device 1 for removing liquid from a surface of a disc-like article W according to a preferred embodiment.
  • the device comprises a spin chuck 2 for holding the disc-like article W and an arm 3 , on which a nozzle assembly 4 is mounted.
  • the disc-like article is a semiconductor wafer (wafer).
  • the spin chuck 2 can rotate (shown by arrow R).
  • the nozzle assembly 4 comprises a plurality of nozzles with orifices facing downward. Different fluids are discharged through such nozzles towards the upward facing surface of the wafer.
  • the arm 3 and the nozzle assembly is connected to a moving mechanism (not shown) to move the nozzle assembly 4 across the wafer's surface.
  • the arm 3 could be moved along a straight line (e.g.
  • a 1 is maintained between the nozzle assembly and the wafer surface.
  • Such distance is optimized depending on the process parameters (e.g. fluid flows, chuck speed) and is selected between 1 mm and 5 cm, preferably between 3 mm and 2 cm.
  • the distance of the nozzle assembly is hereby defined as being the distance of the nozzle orifice, which is closest to the wafer.
  • FIG. 2 , FIG. 3 , and FIG. 4 show schematic bottom views of three different embodiments for such nozzle assembly.
  • FIG. 2 shows a first embodiment of the nozzle assembly with a wetting nozzle 10 for supplying a wetting liquid during the liquid removing process, an opening nozzle 8 for a first gas flow for blowing gas onto a closed liquid layer (when the whole wafer surface is covered with liquid) and thereby opening the liquid layer of wetting liquid, and two curtain nozzles 6 for a second gas flow for providing gas atmosphere.
  • the nozzle assembly 4 further comprises a rinsing nozzle 12 for dispensing rinsing liquid (e.g. DI-water) onto the wafer before the liquid removing process is started.
  • a rinsing nozzle 12 for dispensing rinsing liquid (e.g. DI-water) onto the wafer before the liquid removing process is started.
  • the cross-sectional area of the orifice of opening nozzle 8 is smaller than the sum of cross-sectional areas of the orifices of the curtain nozzles 6 .
  • the cross sectional area of the opening nozzle's orifice is 8 mm 2 (diameter is 3.2 mm) whereas the sum of cross-sectional areas of the two orifices of the curtain nozzles' orifices is 32 mm 2 (2 ⁇ 2 mm ⁇ 8 mm).
  • the gas velocity (v 1 ) of the gas dispensed through the opening nozzle is four times higher than the gas velocity (v 2 ) of the gas dispensed through the curtain nozzle. Therefore the impulse directed toward the liquid layer through the opening nozzle is four times higher than the impulse generated by the curtain nozzles.
  • the distance d 1 describes the distance between opening nozzle's orifice 8 and wetting nozzle's orifice 10 .
  • the distance d 2 describes the distance between curtain nozzle's orifices 6 and wetting nozzle's orifice 10 .
  • This distance d 2 is hereby defined as being the distance between the straight line L 6 and the contour of the wetting nozzle 10 .
  • the straight line L 6 connects the contours of the orifices of the curtain nozzles.
  • the straight line L 6 touches the part of the contours of the orifices, which are facing the wetting nozzle 10 .
  • line L 6 is perpendicular to the moving direction.
  • the distance between two nozzles (e.g. d 1 , d 2 ) shall not be understood as being the distance between the centre of these two nozzles.
  • Said second gas dispensing means comprises two slit-shaped nozzles, wherein each slit is substantially arranged to the radius of the rotational movement at an angle (a) at a range of 85° to 95° (see FIG. 9 ), whereby the second gas dispensing means dispenses a gas curtain.
  • the fourth embodiment of the nozzle assembly shown in FIG. 5 is based on the second embodiment ( FIG. 3 ) however the rinsing nozzle is mounted on a separate arm. Although this leads to a mechanically more complicated solution this gives the advantage that the rinsing nozzle can be removed from the space above the wafer and thus the rinsing nozzle does not interfere with the liquid removing process.
  • the distance d 1 should be in the range of 0.5 cm to 3 cm. If d 1 is at least as big as d 2 the distance d 2 should be in the range of 0.5 cm to 3 cm.
  • a process for removing liquid shall be described with reference to FIG. 2 , FIG. 6 , FIG. 7 , FIG. 8 and FIG. 9 .
  • a wafer with a diameter of 300 mm shall be dried.
  • rinsing liquid is applied to the wafer surface through the rinsing nozzle 12 (at 10 l/min) while the rinsing nozzle my scan across the wafer surface.
  • the rinsing liquid stops at the centre Z ( FIG. 6 ), whereby the wafer surface is kept thoroughly wet.
  • the centre of the wetting nozzle 10 is at position A.
  • the position A is 20 mm before the centre Z with reference to the moving direction of the nozzle assembly 4 .
  • the centre P of the wetting nozzle 10 is used as reference position.
  • the wetting liquid e.g. DI-water
  • the wetting liquid is applied through the wetting nozzle 10 at a volume flow of 0.4 l/min.
  • a cross-sectional area of 4 mm 2 results in a wetting liquid velocity of 2.5 m/s.
  • the rinsing liquid is switched off when the wetting liquid is switched on in position A (see FIG. 6 ).
  • the nozzle assembly is moved over the centre Z of the rotational movement (R) across the wafer at a speed of about 5 mm/s so that the nozzle is held in a position where the opening nozzle 8 is closer to the centre Z after the opening nozzle has passed the centre Z.
  • the first gas flow is switched on before the opening nozzle 8 has reached the centre Z but after the wetting nozzle 10 has passed the centre Z whereby the liquid layer L is initially opened around the centre (see FIG. 7 ).
  • the gas volume flow dispensed through the opening nozzle is f 1 6 l/min (100 cm 3 /s).
  • f 1 can be selected even higher just for a starting phase of 5 s (e.g. 10 l/min) (visualized in FIG. 11 ).
  • the nozzle assembly 4 is further moved towards the wafer edge.
  • the liquid flow of the wetting liquid and the first gas flow are kept constant and thus a smooth liquid/gas boundary layer is established, which is slowly moved towards the wafer edge with the movement of the nozzle assembly.
  • the centre of the wetting nozzle P has a distance to the rotation centre Z of 50 mm (Position C, see FIG. 8 )
  • the curtain nozzle 6 is switched on, whereby a broader area of the boundary layer is supplied with gas.
  • the gas flow of the opening nozzle can be stopped or lowered. When it is lowered it can be lowered to a gas volume flow, which is a fourth of the gas volume flow of the second gas flow.
  • a surface energy influencing medium e.g. 2-propanol
  • Table 1 and table 2 summarize the described process example, which is visualized in FIG. 10 .
  • w1 . . . is a basis rotational speed
  • r1 . . . is the distance of the point of impact to the rotational centre from which onward the circumferential speed shall be kept constant
  • the moving speed m has to be decelerated the farther the nozzle moves outward.
  • the moving speed from centre to position C is 12 mm/s and is lowered thereafter.
  • FIG. 9 shows a schematic top view of an embodiment of the invention well after the nozzle of the first gas dispensing means has started the liquid removing in the centre of a semiconductor wafer (wafer) and is supported by the second gas dispensing means.
  • the nozzle assembly shown in dotted lines at the rotational centre indicates where the movement (indicated by arrow X) of the nozzle assembly had started.
  • the surface active substance is added to the second gas flow at a concentration of 1500 ppm 2-propanol in nitrogen as a carrier gas.
  • the surface active substance (2-propanol) can be added to the wetting liquid (DI-water) at a concentration of 20% per weight.
  • the moving speed m of the nozzle assembly is selected at 2 mm/s.
  • the wafer is held up-side-down on a spin chuck, which means that liquids and gas are supplied to the wafer from below.
  • both sides of the wafer can be dried simultaneously by using the same method e.g. with a spin chuck as disclosed in U.S. Pat. No. 6,536,454B2.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
US12/444,093 2006-10-02 2007-10-16 Device and method for removing liquid from a surface of a disc-like article Abandoned US20100206338A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AT16422006 2006-10-02
ATA1642/2006 2006-10-02
PCT/IB2007/055357 WO2008041211A2 (fr) 2006-10-02 2007-10-16 Procédé et dispositif pour éliminer du liquide à partir d'une surface d'un article en forme de disque

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PCT/IB2007/055357 A-371-Of-International WO2008041211A2 (fr) 2006-10-02 2007-10-16 Procédé et dispositif pour éliminer du liquide à partir d'une surface d'un article en forme de disque

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US13/053,587 Active 2028-04-18 US8911561B2 (en) 2006-10-02 2011-03-22 Device and method for removing liquid from a surface of a disc-like article

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EP (1) EP2067162B1 (fr)
JP (1) JP5523099B2 (fr)
KR (1) KR101433868B1 (fr)
CN (1) CN101542684B (fr)
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US20120131815A1 (en) * 2010-11-30 2012-05-31 Lam Research Ag Method and apparatus for wafer wet processing
US9028621B2 (en) 2010-07-07 2015-05-12 Screen Semiconductor Solutions Co., Ltd. Substrate cleaning method and substrate cleaning device
US20170082924A1 (en) * 2013-06-05 2017-03-23 Semiconductor Manufacturing International (Shanghai) Corporation Edge bead removal apparatus
US10410888B2 (en) 2014-02-27 2019-09-10 Lam Research Ag Device and method for removing liquid from a surface of a disc-like article
US10720343B2 (en) 2016-05-31 2020-07-21 Lam Research Ag Method and apparatus for processing wafer-shaped articles

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SG176708A1 (en) 2009-07-16 2012-01-30 Lam Res Ag Method for drying a semiconductor wafer
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JP5523099B2 (ja) 2014-06-18
US20110168213A1 (en) 2011-07-14
EP2067162A2 (fr) 2009-06-10
CN101542684B (zh) 2013-10-23
JP2011501393A (ja) 2011-01-06
CN101542684A (zh) 2009-09-23
KR20100056993A (ko) 2010-05-28
TWI340996B (en) 2011-04-21
WO2008041211A3 (fr) 2008-08-21
WO2008041211A2 (fr) 2008-04-10
KR101433868B1 (ko) 2014-08-29
TW200919561A (en) 2009-05-01
US8911561B2 (en) 2014-12-16

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