US20100190418A1 - Lapping plate-conditioning grindstone segment, lapping plate-conditioning lapping machine, and method for conditioning lapping plate - Google Patents

Lapping plate-conditioning grindstone segment, lapping plate-conditioning lapping machine, and method for conditioning lapping plate Download PDF

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Publication number
US20100190418A1
US20100190418A1 US12/693,756 US69375610A US2010190418A1 US 20100190418 A1 US20100190418 A1 US 20100190418A1 US 69375610 A US69375610 A US 69375610A US 2010190418 A1 US2010190418 A1 US 2010190418A1
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Prior art keywords
conditioning
lapping plate
lapping
grindstone
carrier
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Abandoned
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US12/693,756
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English (en)
Inventor
Kai Yasuoka
Tsuyoshi Shimizu
Kenichi Kazama
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Shinano Electric Refining Co Ltd
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Shinano Electric Refining Co Ltd
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Assigned to SHINANO ELECTRIC REFINING CO., LTD. reassignment SHINANO ELECTRIC REFINING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAZAMA, KENICHI, SHIMIZU, TSUYOSHI, YASUOKA, KAI
Publication of US20100190418A1 publication Critical patent/US20100190418A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/013—Application of loose grinding agent as auxiliary tool during truing operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • This invention generally relates to a lapping machine comprising a lapping plate and a conditioning carrier disposed on the lapping plate, the carrier being provided with at least one bore for receiving a conditioning grindstone segment, wherein the lapping plate is conditioned by cooperatively rotating the lapping plate and the carrier and feeding loose abrasive grains to the lapping plate. More particularly, it relates to a grindstone segment for conditioning the lapping plate, and a lapping machine and method for conditioning the lapping plate.
  • a lapping machine as shown in FIG. 1 is used for lapping workpieces such as silicon wafers, synthetic quartz glass, rock crystal, liquid crystal glass, and ceramics.
  • the lapping machine of FIG. 1 includes a lower lapping plate 1 made of spheroidal graphite cast iron.
  • the lapping plate 1 is rotatable about its axis by a drive (not shown).
  • a sun gear 2 is disposed at the center and an annular internal gear 3 is disposed along the outer circumference.
  • a plurality of carriers 4 are arranged in mesh with the gears 2 and 3 .
  • Each carrier 4 is provided with a plurality of workpiece-holding bores 5 which are loaded with workpieces 6 to be lapped.
  • an upper lapping plate which is also rotatable like the upper lapping plate is disposed over the carriers 4 .
  • the lapping machine operates such that as the lapping plate 1 is revolved, the carriers 4 are counter rotated. At the same time, abrasive slurry is fed to the plate. Under cooperation of revolving plate with rotating carriers, the workpieces 6 are lapped with loose abrasive grains.
  • the lapping plates are worn into a convex or wavy shape. Then the flatness of workpieces lapped is worsened. Workpieces having satisfactory flatness are no longer obtained. Then the lapping plate is conditioned for flatness by using a lapping plate-conditioning jig made of cast iron like the lapping plates and feeding loose abrasive grains.
  • a lapping plate-conditioning jig made of cast iron like the lapping plates and feeding loose abrasive grains.
  • several conditioning jigs for conditioning the surface accuracy of lapping plates of lapping machines are known from JP-A H11-10522, JP-A 2000-135666, JP-A 2000-218521, JP-A 2006-297488, and JP-A 2007-69323.
  • these lapping plate-conditioning jigs require a long time of conditioning operation until the lapping plate is resurfaced to the desired flatness.
  • burrs form in holes resulting from combustion of spheroidal graphite present on the surface of the cast iron lapping plate at the end of polishing, and the cast iron lapping plate surface is roughened.
  • the lapping machine is substantially increased in size.
  • the lapping plate-conditioning jig must be accordingly increased in size. The resultant increased weight makes the jig inconvenient to handle.
  • a conditioning jig which is light weight and convenient to handle despite a large size of lapping machine, and a method capable of polishing and conditioning a lapping plate within a short time so that the lapping plate may develop a stable lapping force immediately after the start of lapping to produce a workpiece with minimal surface roughness.
  • Patent Document 1 JP-A H11-10522
  • Patent Document 2 JP-A 2000-135666
  • Patent Document 3 JP-A 2000-218521
  • Patent Document 4 JP-A 2006-297488
  • Patent Document 5 JP-A 2007-69323
  • An object of the invention is to provide a lapping plate conditioning grindstone segment which is light weight despite a large size of lapping machine, and achieves within a short time conditioning of a lapping plate to form a uniform fine texture surface with spheroidal graphite holes opened on the lapping plate surface. Another object is to provide a lapping machine and method for the conditioning of a lapping plate.
  • the invention pertains to a lapping machine comprising a lapping plate and a conditioning carrier disposed on the lapping plate, the carrier being provided with at least one bore for receiving a conditioning grindstone segment, wherein the lapping plate is polished and conditioned by cooperatively rotating the lapping plate and the carrier and feeding loose abrasive grains to the lapping plate.
  • the invention provides the conditioning grindstone segment which is fitted in the bore in the carrier has a shape of arcuated trapezoid defining an included angle of 180° to 90° with respect to the center of the corresponding circle.
  • the shape of the conditioning grindstone segment has a radial width of 10 to 20% of the diameter of the circle.
  • the conditioning grindstone segment has a Rockwell hardness (HRS) of 80 to 150.
  • the conditioning grindstone segment is preferably microporous.
  • the conditioning grindstone segment is a synthetic resin bond grindstone segment, preferably having a microporosity of 50 to 90% by volume. More preferably it is a microporous polyurethane bond grindstone segment having a pore size of 20 to 150 ⁇ m. Further preferably, abrasive grains are distributed and bonded in the grindstone, desirably in an amount of 20 to 50% by weight of the grindstone, the abrasive grains being the same as loose abrasive grains used in lapping of workpieces.
  • the conditioning grindstone segment is a cast iron grindstone segment, preferably having a microporosity of 10 to 50% by volume.
  • the invention provides a lapping plate-conditioning lapping machine comprising a lapping plate and a conditioning carrier disposed on the lapping plate, the carrier being provided with at least one bore for receiving a conditioning grindstone segment, wherein the lapping plate is polished and conditioned by cooperatively rotating the lapping plate and the carrier and feeding loose abrasive grains to the lapping plate, the conditioning grindstone segment of the first aspect being fitted in the bore in the carrier.
  • the carrier is provided with 2 to 20 circumferentially spaced apart bores each for receiving a conditioning grindstone segment so that the conditioning grindstone segments fitted in the bores figure a petal shape as a whole.
  • the invention provides a method for conditioning the lapping plate using the conditioning lapping machine of the second aspect. Preferably loose abrasive grains are fed to the lapping plate during the conditioning operation.
  • the invention makes it possible to achieve within a short time conditioning of a lapping plate and simultaneously opening of spheroidal graphite holes on the lapping plate surface and formation of a uniform fine texture surface.
  • a workpiece is actually lapped with the lapping plate using loose abrasive grains, adequate abrasive grains are caught within opened spheroidal graphite holes on the lapping plate surface at an increased retaining force so that a stable lapping force is produced, and the fine texture surface of the lapping plate is transferred to the workpiece.
  • the workpiece is finished to a minimal surface roughness.
  • FIG. 1 is a schematic plan view of one exemplary lapping machine for lapping workpieces, with the upper lapping plate omitted.
  • FIG. 2 is a plan view of a lapping plate-conditioning lapping machine in one embodiment of the invention, with the upper lapping plate omitted.
  • FIG. 3 illustrates in plan view exemplary arc grindstone segments, FIG. 3A showing a segment having an included angle of 180°, and FIG. 3B showing a segment having an included angle of 90°
  • FIG. 4 illustrates the arrangement of disk-shaped grindstones within a carrier.
  • FIG. 5A illustrates the arrangement of disk-shaped workpieces within a lapping plate.
  • FIG. 5B is a plan view showing a lapping simulation.
  • FIG. 6 illustrates the arrangement of ring-shaped grindstones within a carrier.
  • FIG. 7A illustrates the arrangement of ring-shaped workpieces within a lapping plate.
  • FIG. 7B is a plan view showing a lapping simulation.
  • FIG. 8 illustrates the petal-configured assembly of arc-shape grindstones within a carrier.
  • FIG. 9A illustrates the arrangement of petal-configured assemblies of arc-shaped workpieces within a lapping plate.
  • FIG. 9B is a plan view showing a lapping simulation.
  • FIG. 10 is a plan view of a prior art conditioning cast iron carrier.
  • FIG. 11 is a photomicrograph ( ⁇ 100) of the surface of a lapping plate which has been conditioned by the prior art conditioning cast iron carrier.
  • FIG. 12 is a photomicrograph ( ⁇ 100) of the surface of a lapping plate which has been conditioned by the petal-configured assembly of arc-shaped synthetic resin bond grindstone segments according to the invention.
  • FIG. 13 is a photomicrograph ( ⁇ 100) of the surface of an arc-shaped synthetic resin bond grindstone segment in the petal-configured assembly according to the invention.
  • FIG. 14 shows the distribution of points for lapping plate profile measurement.
  • FIG. 15 is a diagram showing the height of a conditioned lapping plate relative to measurement points in Example and Comparative Example.
  • FIG. 16 is a diagram showing batch No. and the material removal when silicon wafers were lapped in Example and Comparative Example.
  • FIG. 17 is a diagram showing batch No. and 10-point average surface roughness when silicon wafers were lapped in Example and Comparative Example.
  • FIG. 2 illustrates a lapping plate-conditioning lapping machine in one embodiment of the invention.
  • This lapping machine is similar to that shown in FIG. 1 except that instead of the carriers 4 , lapping plate-conditioning carriers 10 having conditioning grindstone segment-receiving bores 11 are arranged in mesh with gears 2 and 3 .
  • Polishing and conditioning is carried out by fitting conditioning grindstone segments 12 in the bores 11 in the carriers in, cooperatively rotating the lapping plate 1 and the carriers 10 , and feeding loose abrasive grains to the lapping plate 1 .
  • the conditioning grindstone segment 12 fitted in the bore 11 in the carrier 10 has an arc shape in plan view and a plate or rectangular shape in cross section and is typically a synthetic resin bond or cast iron grindstone.
  • the bore 11 has a corresponding arc shape conforming to the shape of grindstone segment 12 so that the grindstone segment 12 may fit in the bore 11 .
  • An abrasive grain slurry is passed from the upper lapping plate to the lower lapping plate through communication ports 13 .
  • arc shape is an annular segment having a radial width, like a piece of paper extended over and attached to radial ribs of a fan, more specifically a segment delimited by two concentric circles and two radial lines defining an included angle ⁇ of up to 180° with respect to the center O of the corresponding circle (see FIG. 3 ).
  • an arc shape having an included angle ⁇ of 180° to 90° with respect to the center O of the corresponding circle is an ideal shape for the lapping plate conditioning jig capable of polishing the lapping plate uniformly. If the included angle of an arc shape is less than 90°, the surface area of the grindstone segment in contact with the lapping plate is substantially reduced and consequently, the amount of grindstone consumed is increased, which is uneconomical. If the included angle of an arc shape is more than 180°, chances of contact with those grindstone segments disposed inward of the intermediate of the lapping plate width increase, failing in uniform conditioning of the lapping plate.
  • FIGS. 3A and 3B show typical arc shape grindstone segments.
  • FIG. 3A shows an arc shape having an included angle ⁇ of 180°, that is, a semi-annular shape.
  • FIG. 3B shows an arc shape having an included angle ⁇ of 90°, that is, a quadrant-annular shape.
  • the included angle ⁇ is in the range of 180° to 90°, with the range of 160° to 120° being preferred.
  • the arc shape grindstone segment has a radial width W which is in a range of 10 to 20% of the diameter D of the circle. If the segment width W is less than 10% of the diameter D, chances of grindstone segments contacting with the lapping plate become more uniform (which is preferable), but the surface area of the grindstone segment in contact with the lapping plate is substantially reduced and consequently, the amount of grindstone consumed may be increased, which is uneconomical. If the segment width W is more than 20% of the diameter D, the contact surface area is increased to avoid the economic problem, but chances of contact with those grindstone segments disposed inward of the intermediate of the lapping plate width may increase, failing in uniform conditioning of the lapping plate.
  • the grindstone used herein is preferably a synthetic resin bond grindstone or cast iron grindstone.
  • the synthetic resin bond grindstone is preferably microporous. Polyurethane is preferred among synthetic resins because it has water repellency, heat resistance, and mechanical strength, and forms a grindstone containing closed micropores in the interior.
  • Polyurethane-bonded grindstones may be prepared by combining a polyol, for example, a polyester polyol (e.g., polyethylene adipate, polyhexamethylene adipate, polycaprolactone polyol, polycarbonate diol) or a polyether polyol (e.g., polypropylene glycol, polyethylene glycol, polytetramethylene glycol) with an isocyanate such as tolylene 2,4-diisocyanate (TDI) or 4,4′-diphenylmethane diisocyanate (MDI), adding thereto abrasive grains, preferably the same abrasive grains as used in the lapping operation, and high-speed mixing the ingredients in a static mixer for allowing urethane bond reaction to occur under the action of a catalyst (e.g., tertiary amine, triethylenediamine, metal salt, or water) previously added in a minute amount to the polyol.
  • a catalyst e.
  • a microporous polyurethane-bonded grindstone is preferably prepared by mixing a polyol and an isocyanate in a static mixer at a high speed of 2,000 to 5,000 rpm so that urethane reaction may take place.
  • microporous synthetic resin bond grindstone is water repellent and has a closed cell structure rather than an open cell structure.
  • the microporous synthetic resin bond grindstone has fine abrasive grains distributed therein.
  • Abrasive grains are preferably present in an amount of 20 to 50% by weight, more preferably 30 to 40% by weight of the overall grindstone.
  • Abrasive grains are preferably as fine as an average grain size of about 20 ⁇ m to 1 ⁇ m. They may be made of silicon carbide, alumina, chromium oxide, cerium oxide, zirconium oxide or zircon sand, or a mixture of two or more of the foregoing.
  • the abrasive grains are preferably of the same material and grain size as the loose abrasive grains used in lapping of workpieces.
  • the resultant grindstone having abrasive grains distributed and bound therein is more effective in polishing and conditioning of a lapping plate.
  • abrasive grains of the same material and grain size as the loose abrasive grains used in lapping of workpieces are distributed and bound in the grindstone, the following advantage is obtained.
  • abrasive grains may be released from the grindstone and deposited on the surface of the lapping plate at the end of polishing and conditioning. Even so, the problem that residual abrasive grains would otherwise cause scratches or defects to workpieces is avoided because they are the same as loose abrasive grains used in lapping of workpieces.
  • the cast iron grindstone is preferable microporous, and more preferably one having closed micropores in its interior.
  • Such a grindstone is prepared by adding spheroidal graphite to an iron melt, and casting the melt so that spheroidal graphite burns to form micropores in the cast iron.
  • Typical of such cast iron is cast iron FCD 450.
  • the grindstone preferably has a Rockwell hardness (HRS) of 80 to 150, more preferably 100 to 130, and even more preferably 110 to 120. If the Rockwell hardness is too low, the amount of grindstone consumed by polishing may be increased beyond the economically acceptable level. A grindstone having too high a Rockwell hardness, which is higher than the hardness of cast iron lapping plates, may lose the self-release mechanism, failing in uniform conditioning of lapping plates. It is noted that the Rockwell hardness is a HRS value as measured using a steel ball indenter with a diameter of 1 ⁇ 2 inch as the scale and under a test load of 100 kg.
  • HRS Rockwell hardness
  • the microporous grindstone preferably contains micropores or micro-cells, which preferably have a cell size (or diameter) of at least 20 ⁇ m, more preferably at least 40 ⁇ m, and even more preferably at least 50 and up to 200 ⁇ m, more preferably up to 150 ⁇ m, and even more preferably up to 80 ⁇ m.
  • a cell size of 20 to 150 ⁇ m, especially 40 to 80 ⁇ m is preferred.
  • a cell size of 50 to 200 ⁇ m is preferred.
  • a smaller cell size below the range may restrict motion of the abrasive grain slurry dispersed during polishing, leading to uneven polishing.
  • a larger cell size beyond the range facilitates motion of the abrasive grain slurry for uniform polishing, but may provide a rough grindstone structure, resulting in an increased grindstone consumption beyond the economically acceptable level.
  • the microporous synthetic resin bond grindstone preferably has a microporosity of 50 to 90% by volume, more preferably 60 to 80% by volume.
  • a porosity of less than 50% corresponds to a reduced number of micropores present in the surface in abutment with the lapping plate and hence, retention of less grains in the abrasive grain slurry dispersed during polishing, leading to a reduced lapping plate conditioning capability.
  • a porosity of more than 90% corresponds to an increased force of retaining grains during polishing and hence, an increased lapping plate conditioning capability, but may lead to a rough grindstone structure, resulting in an increased grindstone consumption beyond the economically acceptable level.
  • the microporous cast iron grindstone has advantages over the microporous synthetic resin grindstone, including a consumption amount which is less than 1 ⁇ 3 of that of the synthetic resin grindstone, less self-release, and less shape collapse. It preferably has a microporosity of 10 to 50% by volume, more preferably 20 to 40% by volume. At a porosity of less than 10%, little self-release of cast iron occurs during polishing; once micropores are clogged during polishing, dressing is no longer possible and few grains in the abrasive grain slurry dispersed during polishing are retained, leading to an extremely reduced lapping plate conditioning capability.
  • cast iron grindstone has a porosity of more than 50%, an amount of grindstone consumed becomes equal to that of the synthetic resin grindstone, and cast iron particles self released from the cast iron grindstone during polishing may give rise to a phenomenon of causing flaws to the lapping plate during lapping, as opposed to self-release particles from the synthetic resin grindstone during polishing.
  • the time when the lapping plate is conditioned using the conditioning grindstone segments of the invention is not particularly limited.
  • the upper and lower lapping plates are also abraded by abrasive grains used in lapping, whereby the surface accuracy is aggravated into a convex or wavy shape.
  • the operation of conditioning the convex or wavy surface of the lapping plate into a surface having a high accuracy is carried out using the conditioning grindstone segments of the invention.
  • the lapping plate having a flat surface of high accuracy is obtained within a shorter time, as compared with conventional conditioning cast iron carriers.
  • spheroidal graphite holes are opened on the surface of the lapping plate and a uniform fine texture surface is obtained.
  • the lapping plate used in lapping or to be conditioned herein is not particularly limited.
  • a lapping plate of spheroidal graphite cast iron is preferred in the practice of the invention.
  • each of carriers 10 of glass fiber-reinforced epoxy resin has grindstone segment-receiving bores 11 .
  • Arc grindstone segments 12 are fitted in the bores 11 .
  • the carrier 10 also has a communication port 13 for uniform flow of the abrasive grain slurry from the upper lapping plate to the lower lapping plate during lapping operation.
  • the carriers 10 having arc grindstone segments 12 held therein are set in mesh with sun gear 2 and internal gear 3 and between the upper and lower lapping plates.
  • the abrasive grain slurry is fed so as to flow from the upper to the lower lapping plate.
  • the lapping plates are rotated in one direction.
  • the number of carriers 10 arranged is preferably 2 to 16, more preferably 4 to 10.
  • the polishing conditions employed in the conditioning operation may be selected from wide ranges, and are preferably the same conditions as those used in lapping of workpieces following the conditioning.
  • loose abrasive grains which are the same as loose abrasive grains used in subsequent lapping of workpieces.
  • FIG. 5A shows an arrangement on a lapping plate 1 of carriers 20 that carry disk-shaped workpieces 21 as shown in FIG. 4
  • FIG. 7A shows an arrangement on a lapping plate of carriers 20 that carry ring-shaped workpieces 22 as shown in FIG. 6
  • FIG. 9A shows an arrangement on a lapping plate of carriers 20 that carry arc-shaped workpieces 23 (which figure a petal shape 23 ′ as a whole) as shown in FIG. 8
  • FIGS. 5B , 7 B, and 9 B show the states of the respective lapping plate surfaces following lapping.
  • the lapping plate surface includes an area 31 having an increased frequency of contacts and an area 32 having a moderate frequency of contacts, or an area 33 having a uniform frequency of contacts.
  • the simulation reveals that the area having an increased frequency of contacts of the workpiece with the lapping plate surface resulting from revolution and rotation of the workpiece on the lapping machine decreases in the order from disk-shaped workpieces to ring-shaped workpieces, and the assembly of arc-shaped workpieces (which figure a petal shape as a whole) results in a uniform frequency of contacts.
  • the lapping plate 1 includes an area 34 which is out of contact with workpieces.
  • the simulation results indicate that arc-shaped segments are used as the grindstone, and preferably a plurality of, specifically 2 to 20, and more specifically 4 to 12 arc-shaped grindstone segments are held on a carrier and spaced apart in a circumferential direction (rotational direction) of the carrier, with a radial direction of the arc shape aligned with a radial direction of the carrier. More preferably, arc-shaped grindstone segments are held on the carrier, with the outer circle edge of the arc-shaped grindstone segment being in tangential register with the outer circumferential edge of the carrier, so as to figure a petal or corolla assembly as a whole.
  • a plurality of, specifically 2 to 16, and more specifically 4 to 10 carriers, each having arc-shaped grindstone segments arranged in a petal assembly, are arranged on the lapping plate in a revolving direction of the carriers (circumferential direction of the lapping plate).
  • FIG. 11 shows the surface state of a lapping plate which has been polished and conditioned by a conventional conditioning cast iron carrier as shown in FIG. 10 . It is seen that burrs form at holes 27 resulting from combustion of spheroidal graphite present on the surface of the cast iron lapping plate after polishing. The surface of the cast iron lapping plate is roughened.
  • FIG. 12 shows the surface state of a lapping plate which has been polished and conditioned by a petal-configured assembly of arc shape segments of synthetic resin grindstone or cast iron grindstone.
  • the photomicrograph indicates opening of spheroidal graphite holes present on the lapping plate surface and formation of a uniform fine texture surface. Good holes 28 result from combustion of spheroidal graphite present on the surface of the cast iron lapping plate.
  • FIG. 13 shows the surface state of the grindstone segment after a lapping plate has been polished and conditioned by a petal-configured assembly of arc shape segments of synthetic resin grindstone. While the abrasive grain slurry is dispersed during polishing operation, adequate abrasive grains are retained within micropores 29 whereby polishing and conditioning of the lapping plate is completed within a short time.
  • the lapping machine used herein is a 4-way-motion double side lapping machine 16B (Fujikoshi Machinery Corp.).
  • the carriers tested are a carrier having bores for receiving synthetic resin bond grindstone disks as shown in FIG. 4 , a carrier having bores for receiving synthetic resin bond grindstone rings as shown in FIG. 6 , a carrier having bores for receiving arc shape synthetic resin bond grindstone segments as shown in FIG. 8 , and a conventional conditioning cast iron carrier as shown in FIG. 10 .
  • upper and lower lapping plates were polished and conditioned by the following method and conditions.
  • Polishing load 100 g/cm 2 ( ⁇ 9.8 kPa)
  • the type of grindstone used in the conditioning is identified in Table 1.
  • FIG. 8 FIG. 6
  • the surface profile of the lapping plate which had been polished and conditioned under the above conditions was measured by a lapping plate flatness gauge as shown in FIG. 14 .
  • the measurement data are shown in Table 2 and plotted in the diagram of FIG. 15 .
  • the R value is given by the difference between maximum and minimum heights of the lapping plate in its diametrical direction and indicates a lapping plate conditioning capability. It is seen from the results of conditioning that the petal-configured assembly of arc grindstone segments (GS-1) gives the lowest R value, demonstrating that the lapping plate is polished to a uniform surface.
  • the carriers tested are a carrier having bores for receiving synthetic resin bond grindstone rings as shown in FIG. 6 , a carrier having bores for receiving arc shape synthetic resin grindstone segments as shown in FIG. 8 , and a conventional conditioning cast iron carrier as shown in FIG. 10 .
  • upper and lower lapping plates were polished and conditioned by the above-mentioned method and conditions.
  • silicon wafers were repeatedly lapped under the following conditions. The results are shown in Tables 3 and 4 and FIGS. 16 and 17 .
  • Rust preventive 1 wt %
  • spheroidal graphite holes present on the lapping plate surface are opened and a uniform fine texture surface is formed.
  • a workpiece is actually lapped with the conditioned lapping plate using loose abrasive grains, adequate abrasive grains are caught within spheroidal graphite holes on the lapping plate surface at so high a retaining force that a stable lapping force is produced, and the fine texture surface of the lapping plate is transferred to the workpiece.
  • the workpiece is finished to a minimized surface roughness.
US12/693,756 2009-01-27 2010-01-26 Lapping plate-conditioning grindstone segment, lapping plate-conditioning lapping machine, and method for conditioning lapping plate Abandoned US20100190418A1 (en)

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JP2009-015517 2009-01-27
JP2009015517 2009-01-27
JP2009170336A JP2010194704A (ja) 2009-01-27 2009-07-21 定盤修正用砥石、定盤修正用研磨装置及び研磨定盤の修正方法
JP2009-170336 2009-07-21

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US (1) US20100190418A1 (de)
EP (1) EP2210707A3 (de)
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KR (1) KR20100087621A (de)
CN (1) CN101817170A (de)
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Cited By (13)

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USD793971S1 (en) 2015-03-27 2017-08-08 Veeco Instruments Inc. Wafer carrier with a 14-pocket configuration
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
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USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
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US9550264B2 (en) * 2009-06-04 2017-01-24 Sumco Corporation Fixed abrasive-grain processing device, method of fixed abrasive-grain processing, and method for producing semiconductor wafer
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US20120028546A1 (en) * 2010-07-28 2012-02-02 Siltronic Ag Method and apparatus for trimming the working layers of a double-side grinding apparatus
US8911281B2 (en) * 2010-07-28 2014-12-16 Siltronic Ag Method for trimming the working layers of a double-side grinding apparatus
US8986070B2 (en) 2010-07-28 2015-03-24 Siltronic Ag Method for trimming the working layers of a double-side grinding apparatus
US9011209B2 (en) 2010-07-28 2015-04-21 Siltronic Ag Method and apparatus for trimming the working layers of a double-side grinding apparatus
USD793972S1 (en) 2015-03-27 2017-08-08 Veeco Instruments Inc. Wafer carrier with a 31-pocket configuration
USD793971S1 (en) 2015-03-27 2017-08-08 Veeco Instruments Inc. Wafer carrier with a 14-pocket configuration
USD852762S1 (en) 2015-03-27 2019-07-02 Veeco Instruments Inc. Wafer carrier with a 14-pocket configuration
USD778247S1 (en) * 2015-04-16 2017-02-07 Veeco Instruments Inc. Wafer carrier with a multi-pocket configuration
USD806046S1 (en) 2015-04-16 2017-12-26 Veeco Instruments Inc. Wafer carrier with a multi-pocket configuration
USD893438S1 (en) * 2017-08-21 2020-08-18 Tokyo Electron Limited Wafer boat
USD860146S1 (en) * 2017-11-30 2019-09-17 Veeco Instruments Inc. Wafer carrier with a 33-pocket configuration
USD854506S1 (en) 2018-03-26 2019-07-23 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD858469S1 (en) 2018-03-26 2019-09-03 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD860147S1 (en) 2018-03-26 2019-09-17 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD863239S1 (en) 2018-03-26 2019-10-15 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover
USD866491S1 (en) 2018-03-26 2019-11-12 Veeco Instruments Inc. Chemical vapor deposition wafer carrier with thermal cover

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EP2210707A2 (de) 2010-07-28
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EP2210707A3 (de) 2010-12-29
JP2010194704A (ja) 2010-09-09
CN101817170A (zh) 2010-09-01

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