US20080128087A1 - High frequency power supply device and high frequency power supplying method - Google Patents

High frequency power supply device and high frequency power supplying method Download PDF

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Publication number
US20080128087A1
US20080128087A1 US11/943,759 US94375907A US2008128087A1 US 20080128087 A1 US20080128087 A1 US 20080128087A1 US 94375907 A US94375907 A US 94375907A US 2008128087 A1 US2008128087 A1 US 2008128087A1
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Prior art keywords
high frequency
block
signal
frequency
power supply
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US11/943,759
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English (en)
Inventor
Eiich Hayano
Takeshi Nakamura
Yasunori Maekawa
Hiroshi Iizuka
Jinyuan Chen
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Pearl Kogyo Co Ltd
Advanced Micro Fabrication Equipment Inc Asia
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Pearl Kogyo Co Ltd
Advanced Micro Fabrication Equipment Inc Asia
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Assigned to PEARL KOGYO CO. LTD., ADVANCED MICRO-FABRICATION EQUIPMENT, INC. ASIA reassignment PEARL KOGYO CO. LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, JINYUAN, HAYANO, EIICH, IIZUKA, HIROSHI, MAEKAWA, YASUNORI, NAKAMURA, TAKESHI
Publication of US20080128087A1 publication Critical patent/US20080128087A1/en
Priority to US14/745,273 priority Critical patent/US10201069B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/02—Circuits or systems for supplying or feeding radio-frequency energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

Definitions

  • the present invention relates to a high frequency power supply device and a high frequency power supplying method and, in particular, to a high frequency power supply device and a high frequency power supplying method for processing plasmas used in semiconductor device fabrication and the like.
  • a semiconductor device such as DRAM, SRAM, Flash Memory, Optical Semiconductor Chip, etc.
  • DRAM Dynamic RAM
  • SRAM Serial RAM
  • Flash Memory Flash Memory
  • Optical Semiconductor Chip etc.
  • various etching methods can be used, but plasma processing can be used to achieve deep and steep etching with a high aspect ratio, and therefore has been widely adopted for fabrication of most semiconductor devices.
  • Plasma is generated as follows: a gas for generation of plasmas is injected into an evacuated plasma generation chamber; and high frequency power (generally RF, microwave energy, etc.) is supplied into the plasma generation chamber, thereby forming a high frequency electrical field and generating plasma in the evacuated chamber.
  • high frequency power generally RF, microwave energy, etc.
  • the plasma chamber should be designed so as to properly follow the control instruction. For example, the supply of high frequency power into a plasma processing chamber for generation, stabilization, maintenance, and extinguishing the plasma needs to be carefully controlled. Similarly, generating different levels of plasma densities, from a low density to a high density, shall be carried out with good controllability.
  • plasma processing is also used in formation and/or deposition of various films of the semiconductor device. The controllability of supplying the plasma processing chamber with high frequency power becomes a crucial factor in terms of controlling the characteristics of the formed films.
  • a high frequency power supply device For the control of supplying the plasma processing chamber with high frequency power, the following control approaches are adopted in a high frequency power supply device.
  • One is an approach in which power is applied to the plasma chamber in the form of incident wave (incident or traveling wave high frequency power Pf).
  • a reflected wave (reflected high frequency power Pr) is detected and fed back to a power amplifier, that is, a method in which a directivity coupler is used to separate the reflected wave (as returned from the plasma processing device) from the incident wave, and detect and feed back the reflected wave to the power amplifier.
  • This is an approach of controlling the high frequency power itself.
  • the other is an approach of using an impedance matcher to achieve matching with the supplied high frequency power.
  • the impedance matcher includes a detection block, which detects a phase difference ⁇ and an impedance Z of a voltage and a current of the high frequency power, an impedance match block consisted of a capacitor C and an inductor L, a servo motor control block, which sets the phase difference detected by the detection block to zero, and automatically adjusts the capacitor C and the inductor L in such a way that a ratio of the voltage to the current becomes the characteristic impedance of a transmission line.
  • the servo motor control block can also use a scale disc controlled manually.
  • a method of using the impedance matcher is a method of controlling an efficiency with which the supplied high frequency power is used effectively for generation of plasma. With the approaches (1) and (2), a control on the supply of high frequency power used for generation of plasma can thus be achieved.
  • the oscillating frequency of a high frequency oscillating block is variable, and additionally a plasma generation detector is disposed to detect the ignition of plasma inside the plasma processing chamber.
  • the oscillating frequency of the high frequency oscillating block is set to a predetermined fixed frequency at which the plasmas is excited during generation of the plasma.
  • a method can be adopted, in which the phase difference signal is received from the phase difference detector of the impedance matching block, and the oscillating frequency of the high frequency oscillating block is varied to make the phase difference zero.
  • plasma after being generated, can be adjusted electrically directly to an optimum fixed frequency, and be supplied with high frequency, and thus can go into a stable status. That is, once the plasma has been ignited it is maintained by a fixed frequency RF source, and thus the impedance matcher can be used to achieve matching since no rapid impedance variations are expected after plasma ignition.
  • the following problems are present in the approach (1) of feeding back the reflected wave to the high frequency amplifier.
  • two RF frequencies are used; namely one high frequency for striking the plasma and controlling its ion density (generally referred to as source frequency), and a second, generally lower RF frequency, for controlling the energy of the ions in the plasma (generally referred to as bias frequency).
  • the two RF frequencies are often applied to the same electrodes of the plasma processing chamber in an overlap manner. Consequently, the high frequency signal of the source frequency mixes with the reflected wave of the lower bias frequency.
  • the reflected waves from the plasma processing chamber are thus formed of a spectrum of frequencies, including frequency-modulated waves and high order harmonics.
  • a high frequency at a prescribed frequency is used for heterodyne detection, and this prescribed frequency is a frequency below the source frequency but above the frequency of high frequency power for controlling plasmas.
  • this heterodyne detection method such a spectrum can be generated around the high frequency signal of the above prescribed frequency, which includes side peaks that can be separated only by an amount of the frequency of the high frequency power for controlling ions, and the filter for selecting high frequency signal with desired frequency from the spectrum can be realized in a simple configuration.
  • a high frequency signal of the reflected wave can be captured and output to the power amplifier without error.
  • An object of the invention is to provide a high frequency power supply device and a high frequency power supplying method which further improved controllability.
  • a novel combination of heterodyne detection and frequency tuning is utilized to ignite and control the plasma. That is, a heterodyne detection is used to extract a signal corresponding to power reflected from the plasma chamber. The signal is used to control frequency tuning and power amplification. In one aspect, once stable plasma is achieved using the frequency tuning, the frequency is fixed and an impedance match circuit is used to couple the RF energy to the plasma chamber.
  • the high frequency power supply device at least includes a first high frequency power supply block, which supplies a plasma processing chamber with high frequency power at a first frequency, and a second high frequency power supply block, which supplies the plasma processing chamber with high frequency power at a second frequency below the first frequency.
  • the high frequency power supply device is characterized in that the first high frequency power supply block includes: a first high frequency oscillating block, which excites high frequency power at the first frequency and has a variable frequency; a first power amplification block, which receives an output of the first high frequency oscillating block and amplifies power thereof; a first directivity coupler, which receives a reflected wave power from the plasma processing chamber and a traveling wave from the first power amplification block; a first reflected wave heterodyne detection block, which performs heterodyne detection of a reflected wave signal input from the first directivity coupler; and a first control block, which receives a signal after detection of the first reflected wave heterodyne detection block and a traveling wave signal input from the first directivity coupler, and controls an oscillating frequency of the first high frequency oscillating block and an output of the first power amplification block.
  • the first control block receives the heterodyne detection signal with a high precision, and can instantaneously optimize the oscillating frequency and the power amplification using an electronic mechanism.
  • the actual supply of high frequency into the plasma processing chamber can be enabled with a high precision, dependent upon an external operation, and its reaction speed can be improved. That is, in the present invention, although both the first high frequency power supply block and the second high frequency power supply block requires an impedance matching block, the oscillating frequency can be controlled instantaneously using an electronic mechanism to achieve matching before the servo motor mechanism of the impedance matching block is used to control a capacitor, etc.
  • the power supplying efficiency of high frequency power can be improved through optimization of the oscillating frequency, as a result, the allowable power capacity of a power element of the power amplification block can be reduced.
  • a high precision control be performed during low-density plasma.
  • a primary peak of a reflected wave from the plasma processing chamber may be lowered due to a reduction of supplied power, and a situation of being equal to or lower than the amplitude of a side peak tends to occur.
  • the primary peak of the reflected wave may shift in frequency due to the control on the oscillating frequency described above (i.e., frequency matching).
  • heterodyne detection can play an effective role through detection of the lower and frequency-deviating primary peak with a high precision.
  • the first control block receives the heterodyne detection signal, and can issue a frequency instruction suitable for matching by the impedance matching block.
  • the reflected wave can be further weakened.
  • the first control block can enable the power supply of high frequency power with an optimum oscillating frequency and power amplification in a short time based upon the heterodyne detection signal of the weakened reflected wave.
  • controllability a follow-up reaction speed, precision, and resultant stability
  • Semiconductor device fabrication with a high precision can be enabled ideally through application of the present inventive heterodyne detection and frequency control.
  • a reliability of a detection signal can be improved through detection of a reflected wave using heterodyne detection, and therefore the oscillating frequency and the output can be controlled merely depending upon the detection signal. Consequently, for example, no additional detection device (plasma generation detection means and the like) will be required.
  • a traveling wave signal can be input directly to the first control block from the first directivity coupler, and also can be input to the first control block through the first traveling wave detection block of the filter, etc.
  • the first high frequency power supply block may include a first traveling wave heterodyne detection block, which performs heterodyne detection of a traveling wave signal from the first directivity coupler, and the first control block receives a heterodyne detection signal of the traveling wave signal.
  • the second high frequency power supply block may include: a second high frequency oscillating block, which excites high frequency power at the second frequency and has a variable frequency; a second power amplification block, which receives an output of the second high frequency oscillating block and amplifies power thereof; a second directivity coupler, which inputs a reflected wave from the plasma processing chamber and a traveling wave from the second power amplification block; a second reflected wave detection block, which detects a reflected wave signal input from the second directivity coupler; and a second control block, which receives a signal after detection of the second reflected wave detection block and receives a traveling wave signal from the second directivity coupler, and controls an oscillating frequency of the second high frequency oscillating block and an output of the second power amplification block.
  • the plasma processing chamber is supplied with first high frequency power, and is supplied with high frequency power for controlling ions, which controls the bombardment of ions on the substrate, as the second high frequency power
  • a frequency and a power value of the second high frequency power can be optimized instantaneously with a high precision using an electronic mechanism before the control using the servo motor mechanism of the impedance match block, thereby improving stability of plasmas. It is required that plasma be in an electronically neutral condition within an object range. And once their equilibrium is broken, some instability factors may occur.
  • plasmas a plasma density, a plasma pressure, a plasma temperature, etc.
  • a frequency of using the servo motor mechanism of the impedance matching block configured for the second high frequency power supply block can be lowered with the above frequency control.
  • an allowable power capacity of a power element of the second power amplification block can also be reduced.
  • a traveling wave signal can be input directly to the second control block from the second directivity coupler, and also can be input to the first control block through the second traveling wave detection block of the filter, etc.
  • the second reflected wave detection block may act as a second reflected wave heterodyne detection block, which performs heterodyne detection of the reflected wave signal
  • the second control block receives a signal after detection in the second reflected wave heterodyne detection block and controls an oscillating frequency of the second high frequency oscillating block and an output of the second power amplification block.
  • a reflected wave signal with a high precision can be received through additional heterodyne detection of a reflected wave in the second high frequency power supply block, thereby supplying efficiently and instantaneously the plasma processing chamber with the second high frequency power necessary for stable maintenance of plasmas.
  • the second high frequency power supply block may include a second traveling wave heterodyne detection block, which performs heterodyne detection of a traveling wave signal from the second directivity coupler, and the second control block receives a heterodyne detection signal of the traveling wave signal.
  • the traveling wave signal of the second high frequency power supply block can be detected with a high precision through heterodyne detection of the traveling signal, thereby improving an output precision of the power amplification.
  • one or more high frequency power supply blocks which supply the plasma processing chamber with high frequency power and output high frequency power at a frequency different from the first and second frequencies.
  • the supply of high frequency power can be enabled with a higher precision, which will contribute to semiconductor device fabrication with a high precision.
  • At least one of the one or more high frequency power supply blocks may include: a heterodyne detection block, which performs heterodyne detection of at least a reflected wave signal of the reflected wave signal and a traveling wave signal; and a control block, which receives the reflected wave signal after detection of the heterodyne detection block and controls an oscillating frequency and an output of the high frequency power supply block.
  • the inventive method of the present invention is a high frequency power supplying method that supplies a plasma processing chamber at least with a first high frequency power at a first frequency and a second high frequency power at a second frequency below the first frequency.
  • the method is characterized by including: a process of amplifying the first high frequency power in a first high frequency power supply block, and amplifying the second high frequency power in a second high frequency power supply block, and supplying those powers to the plasma processing chamber; a process of performing, in the first high frequency power supply block, heterodyne detection of a reflected wave from the plasma processing chamber; a process of receiving a reflected wave signal after heterodyne detection and a traveling wave signal of the first high frequency power, and controlling an oscillating frequency and power amplification of the first high frequency power supply block; a process of detecting, in the second high frequency power supply block, a reflected wave from the plasma processing chamber and a traveling wave of the second high frequency power; and a process of receiving a reflected wave signal and a
  • the heterodyne detection signal of the reflected wave is used as a control signal for being fed back to the power amplifier and for impedance matching, and the following processes are performed simultaneously: the servo motor mechanism is used to achieve matching in the impedance match block; prior to the matching by the servo motor mechanism, an electronic mechanism can be used to optimize an oscillating frequency and a high frequency power value instantaneously with a high precision. Furthermore, in the second high frequency power supply block, an electronic mechanism can also be used to optimize both an oscillating frequency and a high frequency power value instantaneously with a high precision.
  • a fluctuation of plasmas (a plasma density, a plasma pressure, a plasma temperature, etc.) can be dealt with a higher precision than ever before, thereby supplying instantaneously optimum high frequency power.
  • This high frequency power supplying method is effective on stable generation of various types of plasmas, and especially, a reflected wave from the processing chamber during ignition of plasmas with a low density can be received with a high precision using heterodyne detection, and the optimum power amplification and oscillating frequency can be attained instantaneously. Due to an improved efficiency of supplying high frequency power and greatly inhibited necessary power amplification, power amplification of lower rating may be utilized.
  • the inventive high frequency power supply device and high frequency power supplying method can enable a control on supplying high frequency power effective in generation of various plasmas with a high precision instantaneously. It is possible to improve controllability (a follow-up reaction speed, a precision, and a resultant stability) of supplying high frequency power to various types of plasmas, and especially it is possible to improve controllability of supplying high frequency power in plasmas with a low density, which is thus effective on miniaturization (densification) of a semiconductor device.
  • FIG. 1 is a block diagram depicting a high frequency power supply device according to a first embodiment of the invention.
  • FIG. 2 is a block diagram depicting a first high frequency power supply block of the high frequency power supply device in FIG. 1 .
  • FIG. 3 is a block diagram depicting a variation of the high frequency power supply device according to the first embodiment of the invention.
  • FIG. 4 is a block diagram depicting a first traveling wave heterodyne detection block of a first high frequency power supply block of the high frequency power supply device in FIG. 3 .
  • FIG. 5 is a block diagram depicting a second high frequency power supply block of a high frequency power supply device according to a second embodiment of the invention.
  • FIG. 6 is a block diagram depicting a variation of the second high frequency power supply block of the high frequency power supply device according to the second embodiment of the invention.
  • FIG. 7 is a block diagram depicting another variation of the second high frequency power supply block of the high frequency power supply device according to the second embodiment of the invention.
  • FIG. 8 is a diagram depicting a frequency spectrum of a reflected wave signal before heterodyne detection (at a pressure of 150 mTorr).
  • FIG. 9 is a diagram depicting a frequency spectrum of a reflected wave signal before heterodyne detection (at a pressure of 70 mTorr).
  • FIG. 10 is a diagram depicting a frequency spectrum of a traveling wave signal before heterodyne detection.
  • FIG. 11 is a diagram depicting a frequency spectrum of a reflected wave signal after heterodyne detection (at a pressure of 150 mTorr).
  • FIG. 1 is a block diagram depicting a high frequency power supply device 10 according to the first embodiment of the invention.
  • high frequency power at a first frequency f 1 is supplied from a first high frequency power supply block 11 to a plasma processing chamber 5
  • high frequency power at a second frequency f 2 is supplied from a second high frequency power supply block 71 to the plasma processing chamber 5 .
  • the plasma processing chamber 5 is illustrated as a plasma processing chamber provided with parallel flat plates, an electrode plate 5 a and an electrode plate 5 b , any other apparatus form may be used, provided that it is a processing chamber which is supplied with high frequency power to generate plasmas. Further in FIG.
  • a substrate to be plasma-processed e.g., a semiconductor wafer
  • High frequency power at the first frequency causes a high frequency electrical field to be formed between the two parallel flat plates 5 a and 5 b , as gas is injected thereinto to generate plasma.
  • high frequency power at the second frequency is high frequency power for controlling ion energy, which is supplied to control a motion of ions around the electrode plates.
  • the first frequency f 1 is set around 60 MHz (which is controlled by a first control block 14 , and varies within a prescribed range)
  • the second frequency f 2 is set around 2 MHz
  • the first and second frequencies can be higher or lower.
  • Exemplary values for f 1 include 13.56 MHz, 24 MHz, 60 MHz, 100 Mhz, and 160 Mhz.
  • the second frequency can be varied arbitrarily, but is normally kept below about 10 MHz, more specifically at or below about 2.2 MHz.
  • a tri-frequency synthesized high frequency power supply device can be configured.
  • a dual-frequency synthesized high frequency power supply device of the first and second frequencies is also possible without the high frequency power supply block at the frequency f 3 .
  • a bias DC potential may be applied to cathode 5 b so as to chuck the substrate.
  • the first high frequency power supply block 11 includes a first high frequency oscillating block 16 (e.g., an RF source), which excites the high frequency power at the first frequency f 1 .
  • the oscillating block 16 is variable frequency RF source.
  • the supply block 11 further includes a first power amplification block 15 , which amplifies the high frequency power excited by the first high frequency oscillating block 16 , and further includes a first control block 14 , which controls the oscillating frequency of the first high frequency oscillating block 16 and the amplification ratio of the first power amplification block 15 .
  • a first heterodyne detection block 13 is adapted to separate a reflected wave signal from the plasma processing chamber 5 , to mix the signal with a signal at a prescribed frequency excited from a local oscillator (not shown), and to convert the signals into a low frequency for detection.
  • the first heterodyne detection block 13 will be referred to as “a first reflected wave heterodyne detection block” for distinguishing from “a first traveling wave heterodyne detection block” for heterodyne detection of a traveling wave signal to be described later, and although depicted, “reflected wave” will be omitted in the case of an intricacy, thus simply referred to as “the first heterodyne detection block 13 ”.
  • a reflected wave Sa mixed by the high frequency at the first frequency f 1 and the high frequency at the second frequency f 2 is input to the first heterodyne detection block 13 , and is converted into a low frequency through heterodyne detection.
  • a signal Sb selected by a band pass filter can be output.
  • the first control block 14 receives the reflected signal Sb after heterodyne detection and a traveling wave (incident wave) signal Sc from the first directivity coupler 12 .
  • the incident wave (traveling wave) is input from the first power amplification block 15 to the first directivity coupler 12 , and the incident wave signal Sc is input to the first control block 14 as described above.
  • the second high frequency power supply block 71 Separately from the first high frequency power supply block 11 , there is provided a second high frequency power supply block 71 for controlling ion energies.
  • the second high frequency power supply block 71 includes a high frequency exciter (not shown), but in this embodiment, an oscillating frequency can be variable or fixed. For instance, it can also perform a control on an amplification ratio of a power amplifier as prior high frequency power supply devices, and an impedance match block can be used for another control to achieve matching. That is, since the power supply block 71 is used to control ion energy and not for igniting and maintaining the plasma, the reaction time of the impedance matching for the power supply block 71 is not critical. Therefore, the power supply block 71 may be constructed using prior art technology, or using a similar arrangement as for the power supply block 11 .
  • the first frequency power supply block 11 and the second frequency power supply block 71 are connected to the upper electrode 5 a of the plasma processing chamber 5 , respectively, via impedance match blocks 35 and 95 . Since the first frequency power supply block 11 can control instantaneously an oscillating frequency to inhibit the strength of a reflected wave, therefore a servo motor control mechanism of the impedance match block 35 may or may not be provided between the plasma processing chamber 5 and the first high frequency power supply block 11 . Frequency-modulated waves and high order harmonics of high frequency power at the first and second frequencies are generated in the plasma processing chamber 5 , a part of a spectrum thereof is depicted in association with the plasma processing chamber 5 in FIG. 1 .
  • the spectrum is generated which includes a primary peak of the first frequency f 1 , a side peak resulting from a frequency-modulated wave deviating a few wavelengths from and around the first frequency f 1 , a primary peak of the second frequency f 2 , and their high order harmonics.
  • the first high frequency power supply block 11 will be described hereinafter focusing on the first heterodyne detection block 13 with reference to FIG. 2 .
  • a signal component at the frequency of 49.3 MHz is extracted therefrom through a low pass filter, and is output as H 3 .
  • the synthesized signal H 4 includes a spectrum with side peaks of 8.7 MHz and 12.7 MHz around a primary peak of 10.7 MHz, and information of the reflected wave Sa is reflected in the primary peak of 10.7 MHz.
  • the crystal exciter 13 a , the mixer 13 b , the low pass filter, the mixer 13 c , the band pass filter 13 d , and a part of the oscillating block 16 constitute the first heterodyne detection block 13 .
  • heterodyne detection refers to that a high frequency signal at frequencies f 1 ⁇ fm (f 1 >fm>f 2 ) are generated by adding to and subtracting a prescribed frequency fm (of 10.7 MHz in the case of FIG. 2 ) from the high frequency signal at the first frequency f 1 and the signal at f 1 +fm (a sum component) or f 1 ⁇ fm (a difference component) is extracted and mixed with the reflected wave to be converted into a spectrum for detection, which includes side peaks around the frequency fm.
  • a prescribed frequency fm of 10.7 MHz in the case of FIG. 2
  • the primary peak selected by the band pass filter 13 d with a simple configuration is a signal Sb.
  • the first control block (a control board) 14 receives and performs calculation on the detection signal and the incident wave signal Sc from the first directivity coupler 12 , the frequency control signal S 1 is input to the first high frequency oscillating block (the oscillating block) 16 , and the output control signal S 2 is input to the power amplifier (the first power amplification block) 15 , respectively.
  • the type of supplying the first high frequency power (a level of 60 MHz) and the second high frequency power (a level of 2 MHz) has been described with respect to the supply of high frequency power to the plasma processing chamber, but a tri-frequency synthesis can also be adopted in which direct current or high frequency power (referred to the third high frequency power) is supplied simultaneously in addition to the first high frequency power and the second high frequency power. Still further, a quad-frequency synthesis type simultaneously supplying four frequencies is also possible.
  • heterodyne detection can be performed on a reflected wave signal, and a control can be performed on an oscillating frequency and an output, with respect to detection of the tri-frequency synthesis type in addition to the dual-frequency synthesis type. Further, heterodyne detection can be performed on a traveling wave, and a control can be performed on an oscillating frequency and an output, as described below.
  • the detection signal Sb after heterodyne output varies according to the following changeable statuses, for example: a change of a gas type or a gas pressure of plasmas or a sharp change of a load impedance (plasmas) immediately after etched holes reach an under-layer of different material.
  • the control board (the first control block) 14 can respond to a variation of the detection signal Sb, so that both the oscillating frequency and the power amplification ratio of the oscillating block (the first high frequency oscillating block) are optimized immediately.
  • controllability a responding speed, a precision, a plasma stabilizing operation
  • plasmas a plasma density, a plasma pressure, a plasma temperature, etc.
  • controllability a responding speed, a precision, a plasma stabilizing operation
  • plasmas a plasma density, a plasma pressure, a plasma temperature, etc.
  • contact holes or trenches or the like with a high aspect of a semiconductor device can be disposed stably with a high precision.
  • high controllability can be achieved for high frequency power supplied to plasmas with a low plasma density, it is very advantageous to semiconductor device fabrication with a high precision.
  • the first control block 14 optimizes both the oscillating frequency and power amplification, and therefore achieves impedance matching instantaneously through a frequency control. Due to reduction of a desired power amplification ratio, an allowable power capacity of the power amplifier can be reduced, thereby cutting down a cost of the power amplification means. Further, since a frequency of driving the servo motor mechanism of the impedance match block 35 is lowered, a lifetime of a vacuum variable capacitor driven by the servo motor mechanism can be extended. Further, the servo motor mechanism can be removed from the impedance match block 35 in some cases, which is effective to cut down the cost. Moreover, the servo motor mechanism of the impedance match block 35 can also be preconfigured. Further, a capacity of the power amplification means may not necessarily be made particularly small.
  • FIG. 3 and FIG. 4 are diagrams depicting an example of a first traveling wave heterodyne detection block 18 which is provided to perform heterodyne detection of a traveling wave signal in addition to a reflected wave signal in the embodiment.
  • the first traveling wave heterodyne detection block 18 is configured as FIG. 4 in the same way as in the first reflected wave heterodyne detection block 13 in FIG. 2 , and is configured with a mixer 18 b which mixes a high frequency signal from the oscillating block 16 with a signal from a crystal exciter 18 a , and a mixer 18 c which mixes a signal from the mixer 18 b with a traveling wave signal from the first directivity coupler 12 .
  • peaks at low frequencies can be obtained, and the traveling wave signal can be detected with a high precision using a simply configured band pass filter 18 d .
  • a value of power of the traveling wave can be grasped actually, and a control can be performed on a power amplification ratio properly.
  • direct current or high frequency power (the third high frequency power) is supplied simultaneously to an electrode plate 5 b of the plasma processing chamber.
  • a tri-frequency synthesized high frequency power supply device can be configured.
  • a quad-frequency synthesized device can be configured with supplying simultaneously high frequency power at other frequencies.
  • heterodyne detection can be performed on a reflected wave signal, and can be used to control an oscillating frequency and output.
  • heterodyne detection can be performed on a traveling wave signal, and can be used to control an oscillating frequency and output.
  • FIG. 5 is a block diagram depicting a second high frequency power supply block 71 used in a high frequency power supply device according to the second embodiment of the invention.
  • a first high frequency power supply block supplying high frequency for generation of plasmas
  • the same device is used as in the first embodiment.
  • any high frequency power supply is possible provided that the high frequency power supply block 71 for controlling ions can supply high frequency power at a frequency below the first frequency.
  • a control board (a second control block) 74 which controls an oscillating frequency of an oscillating block (a second high frequency oscillating block) 76 of the high frequency power supply block for controlling ions and an output of a power amplifier (a second power amplification block) 75 , and which inputs a frequency control signal K 1 and an output control signal K 2 to the oscillating block 76 and the power amplifier 75 , respectively.
  • High frequency power for controlling ion energies is used to control ion injection in plasmas. Plasmas are maintained in an electronically neutral condition, and injection of ions is necessary for maintaining an electronically neutral condition. Absence of the ion control may result in increased instability.
  • the control on the supply of the second high frequency power for controlling ions is crucial for stable maintenance of plasmas (an ion energy, a plasma pressure, a plasma temperature, etc.).
  • high frequency power at the lower second frequency (e.g., 2 MHz) for controlling ions is amplified at the second power amplifier 75 , and is supplied to the plasma processing chamber via the impedance match block 95 (see FIG. 1 and FIG. 3 ) through a second directivity coupler 72 .
  • a reflected wave from the plasma processing chamber is separated at the second directivity coupler 72 , and is input to the control board (the second control block) 74 through a low frequency band filter 73 a .
  • the reflected wave from the plasma processing chamber includes the spectrum of the individual peak at the lower second frequency, and a spectrum consisted of a primary peak at the higher first frequency (e.g., 60 MHz) supplied by the first high frequency power supply block and a side peak at an interval of the second frequency.
  • a low frequency band filter which selects the individual peak at the second frequency from this signal, can be made with a simple configuration.
  • a second detection block for detecting a reflected wave is constituted by the low frequency band filter 73 a .
  • a signal of the selected individual peak of the reflected wave is input to the control board (the second control block) 74 .
  • a signal along a path of traveling wave power through the second directivity coupler 72 is formed of the same spectrum as that of the reflected wave.
  • An individual peak at the lower frequency is selected simply with a low pass filter 73 b , and a signal of the individual peak of a traveling wave (incident wave) is input to the control board (the second control block) 74 .
  • the control board 74 performs calculation on the reflected wave signal and the traveling wave signal, and inputs the frequency control signal K 1 to the oscillating block (the second high frequency oscillating block) 76 , and the output control signal K 2 to the power amplifier (the second power amplification block) 75 , respectively.
  • high frequency power for controlling ion energies which is supplied to control ion energies near an electrode plate in plasmas can be controlled correspondingly to an optimum frequency and an optimal power value instantaneously.
  • a plasma status can be controlled correspondingly to keep stable through improving a follow-up speed and precision of controlling ion energies near an electrode plate, even if numerous instability factors are present in plasma processing.
  • a frequency of using a servo motor mechanism of an impedance match block configured for the second high frequency power supply block is lowered due to the frequency control. Therefore, a lifetime of a vacuum variable capacitor driven by the servo motor mechanism can be lengthened, and even the servo motor mechanism can be omitted in some cases. Further, an allowable power capacity of the second power amplifier can be reduced as in the first high frequency power supply.
  • Reflected wave power in FIG. 5 has a frequency of 1.8 MHz ⁇ 2.2 MHz, and therefore detection can be performed with a high precision using the low frequency band filter 73 a .
  • detection can not be performed with a high precision only using the low frequency bandpass filter 73 a .
  • a situation may occur in which a control is performed improperly based upon an incorrect reflected wave signal.
  • FIG, 6 is a diagram depicting a configuration of the second high frequency power supply block 71 configured with a second reflected wave heterodyne detection block 83 , which performs heterodyne detection of a reflected wave signal from the second directivity coupler 72 .
  • a reflected wave can be detected with a high precision through performing heterodyne detection of the reflected wave signal in the second high frequency power supply block 71 , and based upon the heterodyne detection signal, the supply of the second high frequency power can be optimized instantaneously, and the ion control necessary for stabilizing plasmas can be performed with a high precision.
  • an output of the power amplifier in the second high frequency power supply block 71 can be controlled properly with a higher precision.
  • FIG. 8 is a diagram depicting a frequency spectrum of a reflected wave signal when NF 3 is used in a plasma gas at a pressure of 150 mTorr with traveling wave power of 1 kW. Reflected wave power is 20 W at the point A prior to heterodyne detection.
  • FIG. 9 is again a diagram depicting a frequency spectrum of a reflected wave signal at the point A but with a lower plasma pressure of 70 mTorr.
  • a primary peak is at 59.65 MHz and has a magnitude equal to or slightly lower than that of the side peak.
  • a relatively low plasma pressure is crucial in a plasma processing for micro-fabrication of semiconductor devices, but since the magnitude of the primary peak becomes low, an error of the reflected wave signal will occur readily, and an improper control tends to occur.
  • FIG. 10 depicts a spectrum of the traveling wave signal Sc received by the first control block 14 from the first directivity coupler 12 in FIG. 1 . Since the traveling wave and the reflected wave from the first directivity coupler 12 are not separated sufficiently, the traveling wave signal Sc overlaps with the reflected wave signal and may include side peaks identical to the reflected wave signal Sa. However, since unlike the reflected wave signal Sa, the strength of the primary peak is relatively higher than that of the side peaks, a significant error may not occur readily in detection, but the strength of the primary peak is not so high that an influence of the side peaks can be ignored.
  • FIG. 11 depicts a frequency spectrum of the reflected wave signal Sb at the point B after heterodyne detection, in the same plasma conditions as in the case of FIG. 8 .
  • a primary peak is substantially at 10.6 MHz, and side peaks are removed with the band pass filter 13 d .
  • the reflected wave power is as small as 10 mW, and the frequency of the primary peak of the first high frequency power is shifted due to the frequency control, the signal after heterodyne detection is not frequency-shifted, and only the reflected wave signal of the first high frequency power can be received with a high precision.
  • the first control block can enable immediately an optimum oscillating frequency and power amplification based upon the reflected wave signal.
  • the detection precision can be improved with additional heterodyne detection of a traveling wave signal, a result of which is that the control precision can be improved reliably.
  • the supply of high frequency power with high controllability to plasmas of a low plasma pressure is crucial.
  • the reflected wave strength can be detected with a high precision using the heterodyne detection signal as illustrated in FIG. 11 , and an optimum control can be performed immediately.
  • impedance matching can be achieved immediately, and plasma can be supplied efficiently with high frequency power, and therefore a capacity of the power amplification means can be made smaller. Further, since a frequency of using the servo motor mechanism of the impedance match block is reduced, a lifetime of a vacuum variable capacitor can be extended. Moreover, the vacuum variable capacitor can be replaced with a fixed capacitor so as to remove the servo motor mechanism in some cases.
  • a high frequency signal can be received with a high precision, and a frequency and power amplification of high frequency power for generation of plasmas can be controlled to be optimum in a short time.
  • the present invention is advantageous to controllability of stable generation of various types of plasmas, especially to controllability of plasmas with a low density, and accordingly is expected to particularly facilitate the miniaturization of various semiconductor devices.

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EP1926352B1 (en) 2016-03-09
CN101188901B (zh) 2012-05-23
EP1926352A1 (en) 2008-05-28
US20150289355A1 (en) 2015-10-08
KR20080046591A (ko) 2008-05-27
US10201069B2 (en) 2019-02-05
CN101188901A (zh) 2008-05-28
JP2008130398A (ja) 2008-06-05
TW200829087A (en) 2008-07-01
JP5426811B2 (ja) 2014-02-26

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