US20080029811A1 - Vertical Twin-Channel Transistors and Methods of Fabricating the Same - Google Patents

Vertical Twin-Channel Transistors and Methods of Fabricating the Same Download PDF

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Publication number
US20080029811A1
US20080029811A1 US11/687,079 US68707907A US2008029811A1 US 20080029811 A1 US20080029811 A1 US 20080029811A1 US 68707907 A US68707907 A US 68707907A US 2008029811 A1 US2008029811 A1 US 2008029811A1
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semiconductor
patterns
forming
stacks
interleaved
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US11/687,079
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Inventor
Eun-Jung Yun
Sung-young Lee
Min-Sang Kim
Sung-min Kim
Hye-Jin Cho
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, SUNG YOUNG, CHO, HYE JIN, KIM, MIN SANG, KIM, SUNG MIN, YUN, EUN JUNG
Priority to JP2007204374A priority Critical patent/JP5248819B2/ja
Priority to CN2007101399818A priority patent/CN101123275B/zh
Publication of US20080029811A1 publication Critical patent/US20080029811A1/en
Priority to US12/651,688 priority patent/US7897463B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane

Definitions

  • the present invention relates to semiconductor devices and methods of fabrication therefor, and more particularly, to nonvolatile memory devices and methods of fabrication therefor.
  • Field effect transistors are widely used in integrated circuit memory devices. These field effect transistors may include metal oxide semiconductor FETs (MOSFETs) and variants thereof, such as floating gate transistors.
  • MOSFETs metal oxide semiconductor FETs
  • a typical floating gate integrated circuit field effect transistor includes spaced apart source and drain regions, an active (channel-supporting) region therebetween and a gate structure including a tunnel oxide layer on the channel, a charge-retaining layer on the tunnel oxide layer, a dielectric layer on the floating gate layer, and a control gate electrode on the dielectric layer.
  • a transistor in some embodiments of the present invention, includes first and second pairs of vertically overlaid source/drain regions on a substrate. Respective first and second vertical channel regions extend between the overlaid source/drain regions of respective ones of the first and second pairs of overlaid source/drain regions. Respective first and second insulation regions are disposed between the overlaid source/drain regions of the respective first and second pairs of overlaid source/drain regions and adjacent respective ones of the first and second vertical channel regions. Respective first and second gate insulators are disposed on respective ones of the first and second vertical channel regions. A gate electrode is disposed between the first and second gate insulators. The first and second vertical channel regions may be disposed near adjacent edges of the overlaid source/drain regions.
  • the transistor may include respective first and second channel extension regions disposed between the overlaid source/drain regions of the respective first and second pairs of overlaid source/drain regions and abutting respective ones of the first and second vertical channel regions.
  • the first and second gate insulators may include opposing first and second portions of an insulation layer conforming to first and second sidewall surfaces and a bottom surface of the gate electrode.
  • the transistor may further include an insulation region underlying the insulation layer and the gate electrode.
  • the first and second gate insulators may each include a charge trap layer disposed between two insulation layers.
  • the transistor may include third and fourth source/drain regions overlaid on respective ones of the first and second pairs of overlaid source/drain regions.
  • Third and fourth vertical channel regions may extend between respective ones of the third and fourth source/drain regions and upper source/drain regions of the respective first and second pairs of overlaid source/drain regions.
  • Third and fourth gate insulators may be disposed on respective ones of the third and fourth vertical channel regions, a second gate electrode overlying the first gate electrode and extending between the third and fourth gate insulators.
  • An insulation region may be disposed between the first and second gate electrodes.
  • the transistor may include a device isolation region abutting outer edges of the first and second pairs of overlaid source/drain regions and contiguous with the first and second insulation regions.
  • the transistor may further include a gate line structure disposed on a side of the device isolation region opposite one of the pairs of overlaid source/drain regions, the gate line structure extending substantially parallel to the gate electrode of the transistor.
  • Additional embodiments of the present invention provide methods of fabricating a transistor.
  • Spaced-apart first and second stacks of interleaved patterns are formed on a substrate, each of the first and second stacks of interleaved patterns including at least two semiconductor patterns with at least one sacrificial pattern therebetween.
  • Respective first and second vertical semiconductor layers are formed conforming to respective opposing sidewalls of the at least two semiconductor patterns and the at least one sacrificial pattern of respective ones of the first and second stacks of interleaved patterns.
  • Respective first and second gate insulators are formed on respective ones of the first and second vertical semiconductor layers.
  • a conductive gate electrode region is formed extending between the first and second gate insulators.
  • the at least one sacrificial pattern is removed from each of the first and second stacks of interleaved patterns to form gaps between the at least two semiconductor patterns of the stacks of interleaved patterns.
  • Respective insulation regions are formed in respective ones of the gaps.
  • forming spaced-apart first and second stacks of interleaved patterns may include forming interleaved semiconductor and sacrificial layers on the substrate, patterning the semiconductor and sacrificial layers to form a trench defining an active region, forming a trench isolation region in the trench, and forming a trench bisecting the interleaved layers in the active region to form the spaced-apart first and second stacks of interleaved patterns.
  • Removing the at least one sacrificial pattern from each of the first and second stacks of interleaved patterns may include removing portions of the trench isolation region adjacent outer sidewalls of the first and second stacks of interleaved patterns to expose the at least one sacrificial pattern, and etching the exposed at least one sacrificial pattern.
  • forming a trench bisecting the interleaved layers in the active region may include forming spaced-apart first and second mask regions on the interleaved layers in the active region and etching the interleaved layers in the active region using the first and second mask regions as an etching mask.
  • Forming respective first and second vertical semiconductor layers may include forming a semiconductor layer on exposed surfaces of the bisecting trench.
  • Forming respective first and second gate insulators may include forming a first insulation layer on the semiconductor layer and the first and second mask regions.
  • Forming a conductive gate electrode region extending between the first and second gate insulators may include forming a conductive region in the bisecting trench between the first and second stacks of interleaved patterns.
  • Removing portions of the trench isolation region adjacent outer sidewalls of the first and second stacks of interleaved patterns may be preceded by forming a second insulation layer covering the conductive gate electrode region and the first insulation region, and planarizing to remove portions of the first insulation layer, the second insulation layer and the first and second mask regions and thereby expose upper patterns of the first and second stacks of interleaved patterns and the trench isolation region.
  • Forming a first insulation layer may be preceded by forming an insulation region on the semiconductor layer at the bottom of the bisecting trench. Forming a first insulation layer may include forming the first insulation layer on the insulation region at the bottom of the trench.
  • Forming a trench bisecting the interleaved layers may include forming a trench bisecting the first semiconductor layer, the first sacrificial layer and the second semiconductor layer in the active region to form spaced-apart first and second stacks of interleaved patterns, each of which includes a first semiconductor pattern, a first sacrificial pattern on the first semiconductor pattern and a second semiconductor pattern on the first sacrificial pattern.
  • Removing the at least one sacrificial pattern from each of the first and second stacks of interleaved patterns may include removing portions of the trench isolation region adjacent outer sidewalls of the first and second stacks of interleaved patterns to expose the first sacrificial pattern, and etching the exposed first sacrificial pattern.
  • Forming a trench bisecting the interleaved layers may include forming a trench bisecting the first semiconductor layer, the first sacrificial layer, the second semiconductor layer, the second sacrificial layer and the third semiconductor layer in the active region to form the spaced-apart first and second stacks of interleaved patterns, each of which include a first semiconductor pattern, a first sacrificial pattern on the first semiconductor pattern, a second semiconductor pattern on the first sacrificial pattern, a second sacrificial pattern on the second semiconductor patterns and a third semiconductor pattern on the second sacrificial pattern.
  • Removing the at least one sacrificial pattern from each of the first and second stacks of interleaved patterns may include removing portions of the trench isolation region adjacent outer sidewalls of the first and second stacks of interleaved patterns to expose the first sacrificial pattern and the second sacrificial pattern, and etching the exposed first and second sacrificial patterns.
  • forming spaced-apart first and second stacks of interleaved patterns may include forming spaced apart first, second, third and fourth stacks of interleaved patterns, each including at least two semiconductor patterns with at least one sacrificial pattern therebetween, the first and second stacks of interleaved patterns disposed between the third and fourth stacks of interleaved patterns.
  • Forming respective first and second vertical semiconductor layers may include forming vertical semiconductor layers conforming to sidewalls of the first, second, third and fourth stacks of interleaved patterns.
  • Forming respective first and second gate insulators on respective ones of the first and second vertical semiconductor layers may include forming a first insulation layer covering the vertical semiconductor layers.
  • Forming a conductive gate electrode region extending between the first and second gate insulators may include forming a first conductive region in a trench between the first and second stacks of interleaved patterns, a second conductive region in a trench between the first and third stacks of interleaved patterns, and a third conductive region between the second and fourth stacks of interleaved patterns.
  • Removing the at least one sacrificial pattern from each of the first and second stacks of interleaved patterns may include forming a second insulation layer covering the first, second and third conductive regions and the first insulation layer, removing portions of the second insulation layer, the first insulation layer, and the first and second stacks of interleaved patterns adjacent the second and third conductive regions to expose at least one sacrificial pattern from each of the first and second stacks of interleaved patterns, and etching the exposed at least one sacrificial pattern from each of the first and second stacks of interleaved patterns.
  • methods may include doping the semiconductor patterns prior to forming the first and second vertical channel regions. In further embodiments, methods may include doping the semiconductor patterns following formation of the gate electrode and prior to forming the respective insulation regions in the respective ones of the gaps. In additional embodiments, methods may include doping the semiconductor patterns after forming the respective insulation regions in the respective ones of the gaps.
  • Additional embodiments of the present invention provide methods of forming a transistor array.
  • a stack of interleaved layers is formed including at least two semiconductor layers with at least one sacrificial layer therebetween.
  • the stack of interleaved layers is patterned to form spaced apart first, second, third and fourth stacks of interleaved patterns, each including at least two semiconductor patterns with at least one sacrificial pattern therebetween, the first and second stacks of interleaved patterns disposed between the third and fourth stacks of interleaved patterns.
  • Vertical semiconductor layers are formed on sidewalls of the first, second, third and fourth stacks of interleaved patterns.
  • a gate insulation layer is formed covering the vertical semiconductor layers and the first, second, third and fourth stacks of interleaved patterns.
  • a first gate electrode is formed on the gate insulation layer between the first and third stacks of interleaved patterns, a second gate electrode on the gate insulation layer between on the first and second stacks of interleaved patterns, and a third gate electrode on the gate insulation layer between the second and fourth stacks of interleaved patterns.
  • An insulation layer is formed covering the first, second and third gate electrodes and the gate insulation layer. Portions of the insulation layer, the gate insulation layer and portions of the first and second stacks of interleaved patterns adjacent the first and third gate electrodes are removed to expose at least one sacrificial layer in each of the first and second stacks of interleaved patterns. The exposed at least one sacrificial layer in each of the first and second stacks of interleaved patterns is removed to form gaps between semiconductor layers thereof. Insulation regions are formed in the gaps.
  • FIG. 1 illustrates a transistor according to some embodiments of the present invention.
  • FIGS. 2-13 illustrate fabrication products and operations for forming the transistor of FIG. 1 .
  • FIG. 14 illustrates a transistor according to some embodiments of the present invention.
  • FIGS. 15-26 illustrate fabrication products and operations for forming the transistor of FIG. 14 .
  • FIG. 27 illustrates a transistor according to some embodiments of the present invention.
  • FIGS. 28-33 illustrate fabrication products and operations for forming the transistor of FIG. 27 .
  • FIG. 34 illustrates a transistor for a transistor array according to some embodiments of the present invention.
  • FIGS. 35-49 illustrate fabrication products and operations for forming the transistor of FIG. 34 .
  • FIG. 50 illustrates a transistor for a transistor array according to some embodiments of the present invention.
  • FIGS. 51-60 illustrate fabrication products and operations for forming the transistor of FIG. 50 .
  • first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
  • Embodiments of the present invention are described herein with reference to perspective illustrations that are schematic illustrations of idealized embodiments of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated or described as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the present invention.
  • FIG. 1 illustrates a vertical twin-channel transistor 100 according to some embodiments of the present invention.
  • the transistor 100 includes a substrate 101 with a trench 107 therein.
  • a first insulation region 109 is disposed in a bottom of the trench 107 .
  • a gate insulation layer 110 conforms to a top surface of the first insulation region 109 and adjacent sidewalls of the trench 107 .
  • the gate insulation layer 110 may be a multilayer structure including a charge trap layer, e.g., to support non-volatile data storage.
  • a gate electrode 111 is disposed on gate insulation layer 110 in the trench 107 .
  • a second insulation region 112 is disposed on the gate electrode 111 .
  • Source/drain regions 115 , 116 are disposed on respective sides of the gate electrode 111 . Respective vertically overlaid source/drain regions 115 , 116 are connected by respective vertical channel regions. 117 . Respective insulation regions 114 are interposed between respective vertically overlaid source/drain regions 115 , 116 , adjacent the channel regions 117 .
  • FIGS. 2-13 illustrate exemplary operations for forming the transistor 110 of FIG. 1 .
  • a first crystalline silicon layer 102 is formed on a substrate 101 using, for example, an epitaxial process.
  • a sacrificial layer 103 e.g., a silicon-germanium (SiGe) layer, is formed on the silicon layer 102 .
  • a second crystalline silicon layer 104 is formed on the sacrificial layer 103 .
  • the substrate 101 , first silicon layer 102 , sacrificial layer 103 and second silicon layer 104 are patterned to form a trench, which is filled with an insulating material to form a shallow-trench isolation (STI) region 105 .
  • the STI region 105 extends beneath the interface of the substrate 101 and the first silicon layer 102 .
  • a hard mask layer e.g., a silicon nitride layer, is formed on the resultant structure and patterned to formed spaced apart mask regions 106 .
  • portions of the substrate 101 , first silicon layer 102 , sacrificial layer 103 and second silicon layer 104 are removed using the mask regions 106 as an etching mask, thus forming a trench 107 that separates stacks of patterns, including a first semiconductor pattern 101 a , a second semiconductor pattern 102 a , a sacrificial pattern 103 a , and a third semiconductor pattern 104 a.
  • an epitaxial process may then be used to form a crystalline silicon layer 108 on the bottom and sidewalls of the trench 107 .
  • a first insulation region 109 may then be formed on the silicon layer 108 at the bottom of the trench 107 , as shown in FIG. 7 .
  • the first insulation region 109 has a height below the top surface of the second semiconductor pattern 102 a.
  • a gate insulation layer 110 is formed on the resultant structure, covering the first insulation layer 109 , adjacent portions of the silicon layer 108 and the mask regions 106 .
  • the gate insulation layer 110 may include, for example, a single insulation layer or a multilayer structure including, for example, an oxide-nitride-oxide (ONO) structure.
  • ONO oxide-nitride-oxide
  • a gate electrode 111 is formed on the gate insulation layer 110
  • a second insulation layer 112 is formed on the gate electrode 111 .
  • the second insulation layer 112 is planarized, as shown in FIG. 10 .
  • portions of the STI region 105 are removed to form a trench 113 that exposes the sacrificial patterns 103 a .
  • the sacrificial patterns 103 a may then be removed using, for example, a wet etch, to form gaps between the second semiconductor patterns 102 a and the third semiconductor patterns 104 a .
  • an insulation layer 114 is then formed that fills the gaps.
  • Source/drain regions 115 , 116 may be formed by ion-implantation of the second and third semiconductor patterns 102 a , 104 a and adjoining portions of the silicon layer 108 , leaving vertical channel regions 117 extending between overlapping ones of the source/drain regions 115 , 116 .
  • FIG. 14 illustrates a transistor 300 according to further embodiments of the present invention.
  • the transistor 300 includes a substrate 301 having trench 309 therein.
  • a first insulation region 311 is disposed at the bottom of the trench 309 .
  • a multilayer gate insulator 312 is disposed on the first insulation region 311 and adjacent sidewalls of the trench 309 , and includes a nitride layer 314 disposed between first and second oxide layers 313 , 315 .
  • a gate electrode 316 is disposed on the gate insulator 312 in the trench 309 .
  • a second insulation region 317 is disposed on the gate electrode 316 .
  • Overlaid source/drain regions 320 , 321 are disposed on respective sides of the gate electrode 316 , and are joined by respective vertical channel regions 323 .
  • Crystalline silicon interlayer regions 304 are disposed between the overlaid source/drain regions 320 , 321 . Interlayer regions 304 may increase channel length and support multi-bit operation in memory applications.
  • FIGS. 15-26 illustrate operations for forming the transistor 300 of FIG. 14 .
  • a first crystalline semiconductor layer 302 , a first sacrificial layer 303 , a second crystalline silicon layer 304 , a second sacrificial layer 305 and a third crystalline semiconductor layer 306 are sequentially formed on a substrate 301 .
  • the substrate 301 and overlying layers 302 - 306 are patterned to form a trench, which is filled with an insulating material to form an STI region 307 , as shown in FIG. 16 .
  • a hard mask layer is formed and patterned to form spaced-apart mask regions 308 that overlie the STI region 307 and portions of the stacked layers.
  • portions of the substrate 301 and overlying layers 302 - 306 are then removed to form a trench 309 between spaced-apart stacks of patterns, each including a first semiconductor pattern 301 a , a second semiconductor pattern 302 a , a first sacrificial pattern 303 a , a third semiconductor pattern 304 a , a second sacrificial pattern 305 a , and a fourth semiconductor pattern 306 a.
  • a crystalline silicon layer 310 is formed on bottom and sidewalls of the trench 309 .
  • a first insulation region 311 is formed on the silicon layer 310 at the bottom of the trench 309 .
  • the top surface of the first insulation layer 311 is below the top surface of the second semiconductor pattern 302 a.
  • a gate insulator layer 312 including oxide layers 313 , 315 and interposed nitride layer 314 , is formed on the resulting structure.
  • a gate electrode 316 is formed on the gate insulator layer 312 in the trench 309 , and an insulation layer 317 formed thereon.
  • the gate insulator layer 312 and insulation layer 317 are planarized to expose the fourth semiconductor patterns 306 a.
  • portions of the STI region 307 are removed to expose the first and second sacrificial patterns 303 a , 305 a .
  • the sacrificial patterns 303 a , 305 a are removed by wet etching to leave gaps between the second and third semiconductor patterns 302 a , 304 a and between the third and fourth semiconductor patterns 304 a , 306 a . These gaps are filled with an insulating material to form insulation regions 319 , as shown in FIG. 26 .
  • the second and fourth semiconductor patterns 302 a , 306 a and adjoining portions of the silicon layer 310 are ion implanted to form source/drain regions 320 , 321 connected by vertical channel regions 323 .
  • FIG. 27 illustrates a transistor 400 according to further embodiments of the present invention.
  • the transistor 400 has stacked vertical twin channels 419 that connect adjacent overlaid source/drain regions 417 , 418 disposed on a substrate 401 .
  • Multiple gate electrodes 413 are disposed between the source/drain regions 417 , 418 on gate insulation layer 412 including oxide layers 409 , 411 and an intervening nitride layer 410 .
  • a first insulation region 408 is disposed beneath a lower one of the gate electrodes 413
  • a second insulation region 414 is disposed between the gate electrodes 413
  • a third insulation region 414 is disposed on the upper one of the gate electrodes 413 .
  • FIGS. 28-33 illustrate operations for forming the transistor 400 of FIG. 27 .
  • alternating silicon and sacrificial layers 402 , 403 are formed on a substrate 401 .
  • the substrate 401 and layers 402 , 403 are patterned to form a trench in which an STI region 404 is formed.
  • Spaced-apart mask regions 405 are formed on the layers 402 , 403 and used to form a trench that defines spaced-apart stacks of layers including a substrate pattern 401 a and alternating silicon and sacrificial patterns 402 a , 403 a .
  • a silicon layer 407 is formed in the trench, and a first insulation region 408 is formed at on the silicon layer 407 at the bottom of the trench.
  • a multilayer gate insulator layer 412 including oxide layers 409 , 411 and an intervening nitride layer 410 is formed on the first insulation layer 408 and sidewall surfaces of the trench.
  • Gate electrodes 413 and second and third insulation regions 414 are formed on the gate insulator layer 412 .
  • the resultant structure is planarized to expose upper ones of the silicon patterns 402 a .
  • portions of the STI region 401 are removed to expose the sacrificial patterns 403 a .
  • the sacrificial patterns 403 a are etched away to form gaps that are filled with an insulation layer 416 , as shown in FIGS. 32 and 33 .
  • the silicon patterns 402 a and adjoining portions of the silicon layer 407 are ion implanted to form source/drain regions 417 , 418 .
  • FIG. 34 illustrates a transistor 500 according to further embodiments of the present invention.
  • the transistor 500 has a vertical twin-channel structure including overlaid source/drain regions 520 , 521 connected by vertical channels 522 .
  • a gate electrode is disposed on a gate insulator layer 510 between the source/drain regions 521 .
  • An insulation region 512 is disposed on the gate electrode 511 .
  • the transistor 500 shown in FIG. 34 is configured for fabrication in a two-dimensionally arrayed arrangement.
  • additional transistors (not shown) having the configuration of the transistor 500 are disposed along a y-axis.
  • gate electrodes 511 are disposed on opposites sides of the transistor 500 .
  • These gate electrodes 511 are connected to additional transistors (not shown) that may have the same structure as the transistor 500 and that are displaced with respect to the transistor 500 along an x-axis that is perpendicular to the y-axis.
  • FIGS. 35-49 illustrate exemplary operations for fabricating the transistor 500 of FIG. 34 .
  • first and second areas are defined on a substrate 501 .
  • crystalline silicon layers 502 , 504 and an intervening sacrificial layer 503 are formed on the substrate 501 .
  • buffer and mask layers 505 , 506 are formed on the upper silicon layer 504 .
  • Photomask patterns 507 are formed on the mask layer 506 , exposing portions thereof in the first and second areas. Using the photomask patterns 507 , mask patterns 506 a and buffer patterns 505 a are formed, as shown in FIG. 38 .
  • These patterns are used to etch trenches 508 through the silicon layers 502 , 504 and the sacrificial layer 503 , as shown in FIG. 39 .
  • the etching also forms stacks of silicon and sacrificial patterns 502 a , 503 a , 504 a.
  • a crystalline silicon layer 509 is formed on bottom and sidewall surfaces of the trenches 508 .
  • the buffer and mask patterns 505 a , 506 a are removed and a gate insulation layer 510 is formed on the resultant structure, covering the crystalline silicon layer 509 and the adjacent patterns 502 a , 503 a , 504 a .
  • Gate electrodes 511 are then formed one the gate insulation layer 510 in the trenches 508 , as shown in FIG. 42 .
  • an insulating layer 512 is formed on the gate electrodes 511 , followed by a formation of a mask layer 513 on the insulating layer 512 .
  • a photomask 514 is formed on the mask layer 513 in the first area, and used as an etching mask to remove portions of the mask layer 513 and the insulating layer 512 in the second areas and leave a mask pattern 513 a , as shown in FIG. 44 .
  • the mask pattern 513 a is used as an etching mask to remove silicon and sacrificial patterns 502 a - 504 a outside of the mask pattern 513 a , and form trenches 515 that expose sidewalls of silicon and sacrificial patterns 502 a - 504 a underlying the mask pattern 513 a .
  • the trenches 515 are filled with an insulating layer 516 , which is planarized to produce the structure shown in FIG. 46 .
  • Mask patterns 517 are then formed and used to formed trenches 518 , as shown in FIG. 47 . Referring to FIGS.
  • Silicon patterns 502 a , 504 a and adjoining portions of the silicon layer 509 are ion implanted to form source/drain regions 520 , 521 , which are connected by vertical channels 522 .
  • FIG. 50 illustrates an array transistor 800 according to yet additional embodiments of the present invention.
  • the transistor 800 includes a stack of overlaid source/drain regions 822 , 832 connected by vertical channel regions 824 on a substrate 801 .
  • First and second gate electrodes 813 are disposed between respective pairs of the channel regions 824 and separated therefrom by a gate insulator layer including oxide layers 809 , 811 and an intervening nitride layer 810 .
  • a first insulation region 814 is disposed between the gate electrodes 813
  • a second insulation region 814 is disposed on atop one of the gate electrodes 813 .
  • FIGS. 51-60 illustrate operations for forming the transistor 800 .
  • alternating silicon and sacrificial layers 802 , 803 are formed on a substrate 801 having first and second areas defined thereon.
  • these layers are patterned to form stacks of silicon and sacrificial patterns 802 a , 803 a and trenches in which a silicon layer 810 , a gate insulator layer 812 , gate electrodes 813 and insulation regions 814 are formed.
  • a mask layer 815 is formed on the structure and patterned using a photomask 816 to form a mask pattern 815 a . Referring to FIG.
  • the mask pattern 815 a is used as an etching mask to form trenches 817 .
  • the trenches 817 are filled by an insulating layer 818 .
  • the mask pattern 815 a is removed and mask patterns 819 formed.
  • the mask patterns 819 are used to form trenches 820 that expose sidewall portions of sacrificial patterns 803 a .
  • the exposed sacrificial patterns 803 a are removed, and the resultant gaps and trenches 820 filled with an insulation layer 821 .

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US8379453B2 (en) * 2008-04-04 2013-02-19 Trom Trench MONOS memory cell and array
US9048329B2 (en) 2009-07-23 2015-06-02 Samsung Electronics Co., Ltd. Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
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US9012326B2 (en) * 2010-08-13 2015-04-21 Samsung Electronics Co., Ltd. Methods for patterning microelectronic devices using two sacrificial layers
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US10381408B2 (en) * 2016-03-24 2019-08-13 Western Digital Technologies, Inc. Method to fabricate discrete vertical transistors
US11088070B2 (en) * 2019-07-23 2021-08-10 Imec Vzw Method of forming a multi-level interconnect structure in a semiconductor device
CN111463280A (zh) * 2020-03-18 2020-07-28 中国科学院微电子研究所 一种半导体器件及其制作方法、集成电路及电子设备
US11895849B2 (en) 2020-06-18 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same

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US7897463B2 (en) 2011-03-01

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