US20070178698A1 - Substrate processing apparatus and fabrication process of a semiconductor device - Google Patents

Substrate processing apparatus and fabrication process of a semiconductor device Download PDF

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Publication number
US20070178698A1
US20070178698A1 US11/491,544 US49154406A US2007178698A1 US 20070178698 A1 US20070178698 A1 US 20070178698A1 US 49154406 A US49154406 A US 49154406A US 2007178698 A1 US2007178698 A1 US 2007178698A1
Authority
US
United States
Prior art keywords
substrate
processing
shielding plate
processed
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/491,544
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English (en)
Inventor
Yoichi Okita
Koji Ibi
Minoru Suzuki
Yuuichi Tachino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Assigned to FUJITSU LIMITED reassignment FUJITSU LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IBI, KOJI, SUZUKI, MINORU, TACHINO, YUUICHI, OKITA, YOICHI
Publication of US20070178698A1 publication Critical patent/US20070178698A1/en
Assigned to FUJITSU MICROELECTRONICS LIMITED reassignment FUJITSU MICROELECTRONICS LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJITSU LIMITED
Assigned to FUJITSU SEMICONDUCTOR LIMITED reassignment FUJITSU SEMICONDUCTOR LIMITED CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: FUJITSU MICROELECTRONICS LIMITED
Priority to US13/479,496 priority Critical patent/US20120231553A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the shielding plate 46 of quartz or alumina of the plasma etching apparatus 40 of FIG. 4 is replaced with a metal shielding plate 86 .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
US11/491,544 2004-03-31 2006-07-24 Substrate processing apparatus and fabrication process of a semiconductor device Abandoned US20070178698A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/479,496 US20120231553A1 (en) 2004-03-31 2012-05-24 Substrate processing apparatus and fabrication process of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/004602 WO2005104203A1 (ja) 2004-03-31 2004-03-31 基板処理装置および半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/004602 Continuation WO2005104203A1 (ja) 2004-03-31 2004-03-31 基板処理装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/479,496 Division US20120231553A1 (en) 2004-03-31 2012-05-24 Substrate processing apparatus and fabrication process of a semiconductor device

Publications (1)

Publication Number Publication Date
US20070178698A1 true US20070178698A1 (en) 2007-08-02

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Family Applications (2)

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US11/491,544 Abandoned US20070178698A1 (en) 2004-03-31 2006-07-24 Substrate processing apparatus and fabrication process of a semiconductor device
US13/479,496 Abandoned US20120231553A1 (en) 2004-03-31 2012-05-24 Substrate processing apparatus and fabrication process of a semiconductor device

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Application Number Title Priority Date Filing Date
US13/479,496 Abandoned US20120231553A1 (en) 2004-03-31 2012-05-24 Substrate processing apparatus and fabrication process of a semiconductor device

Country Status (4)

Country Link
US (2) US20070178698A1 (zh)
JP (1) JP4421609B2 (zh)
CN (1) CN1914714B (zh)
WO (1) WO2005104203A1 (zh)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090056875A1 (en) * 2004-12-13 2009-03-05 Novellus Systems, Inc. Enhanced stripping of low-K films using downstream gas mixing
EP2195826A2 (en) * 2007-09-04 2010-06-16 Eugene Technology Co., Ltd. Substrate processing apparatus
US8058178B1 (en) 2004-07-13 2011-11-15 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US8444869B1 (en) 2006-10-12 2013-05-21 Novellus Systems, Inc. Simultaneous front side ash and backside clean
US8721797B2 (en) 2009-12-11 2014-05-13 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
EP2417627A4 (en) * 2009-04-06 2015-09-23 Lam Res Corp CONTAINMENT RING EARTHED WITH LARGE SURFACE
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US9564344B2 (en) 2009-12-11 2017-02-07 Novellus Systems, Inc. Ultra low silicon loss high dose implant strip
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US20170316921A1 (en) * 2016-04-29 2017-11-02 Retro-Semi Technologies, Llc Vhf z-coil plasma source
WO2018098100A1 (en) * 2016-11-25 2018-05-31 Applied Materials, Inc. Process kit and method for processing a substrate
US10370757B2 (en) 2013-02-04 2019-08-06 Ulvac, Inc. Thin substrate processing device
US11282718B2 (en) 2014-02-27 2022-03-22 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
US20220148861A1 (en) * 2020-11-10 2022-05-12 Tokyo Electron Limited Substrate processing apparatus
US11489106B2 (en) 2019-12-23 2022-11-01 Spts Technologies Limited Method of plasma etching
US11664232B2 (en) 2019-12-23 2023-05-30 Spts Technologies Limited Method and apparatus for plasma etching

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012109446A (ja) * 2010-11-18 2012-06-07 Tokyo Electron Ltd 絶縁部材及び絶縁部材を備えた基板処理装置
JP6434617B2 (ja) * 2015-05-22 2018-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそれを用いたプラズマ処理方法
JP6667797B2 (ja) * 2016-11-16 2020-03-18 日本電気硝子株式会社 ガラス基板の製造方法
JP6902991B2 (ja) 2017-12-19 2021-07-14 株式会社日立ハイテク プラズマ処理装置
CN109950121B (zh) * 2019-04-15 2021-07-27 江苏鲁汶仪器有限公司 一种通电离子源挡板
US11776792B2 (en) 2020-04-03 2023-10-03 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
CN114203594A (zh) * 2021-12-08 2022-03-18 北京北方华创微电子装备有限公司 去气腔室及半导体工艺设备

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Publication number Priority date Publication date Assignee Title
US6007673A (en) * 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US6013580A (en) * 1995-01-31 2000-01-11 Sony Corporation Preprocessing method of metal film forming process
US6022805A (en) * 1995-11-13 2000-02-08 Sony Corporation Method of fabricating semiconductor device with a multi-layered interconnection structure having a low contact resistance
US6071828A (en) * 1998-06-22 2000-06-06 Fujitsu Limited Semiconductor device manufacturing method including plasma etching step
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US20020023896A1 (en) * 2000-08-25 2002-02-28 Yuuichi Tachino Plasma etching method and apparatus
US20030052086A1 (en) * 2001-09-20 2003-03-20 Michinobu Mizumura Etching method of organic insulating film
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage

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JP2745895B2 (ja) * 1991-10-04 1998-04-28 住友金属工業株式会社 プラズマ装置
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
JPH11283969A (ja) * 1998-03-30 1999-10-15 Rohm Co Ltd ウェハ固定リング
JP2001257201A (ja) * 2000-03-09 2001-09-21 Hitachi Ltd マイクロ波プラズマ処理装置
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
JP2003217899A (ja) * 2002-01-17 2003-07-31 Anelva Corp プラズマ処理装置及びプラズマ処理方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013580A (en) * 1995-01-31 2000-01-11 Sony Corporation Preprocessing method of metal film forming process
US6022805A (en) * 1995-11-13 2000-02-08 Sony Corporation Method of fabricating semiconductor device with a multi-layered interconnection structure having a low contact resistance
US6007673A (en) * 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6071828A (en) * 1998-06-22 2000-06-06 Fujitsu Limited Semiconductor device manufacturing method including plasma etching step
US20020023896A1 (en) * 2000-08-25 2002-02-28 Yuuichi Tachino Plasma etching method and apparatus
US20030052086A1 (en) * 2001-09-20 2003-03-20 Michinobu Mizumura Etching method of organic insulating film
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058178B1 (en) 2004-07-13 2011-11-15 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US8641862B2 (en) 2004-12-13 2014-02-04 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US9941108B2 (en) 2004-12-13 2018-04-10 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US20090056875A1 (en) * 2004-12-13 2009-03-05 Novellus Systems, Inc. Enhanced stripping of low-K films using downstream gas mixing
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US8716143B1 (en) 2005-05-12 2014-05-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US8444869B1 (en) 2006-10-12 2013-05-21 Novellus Systems, Inc. Simultaneous front side ash and backside clean
US9373497B2 (en) 2007-04-04 2016-06-21 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
EP2195826A4 (en) * 2007-09-04 2011-05-04 Eugene Technology Co Ltd APPARATUS FOR TREATING SUBSTRATES
EP2195826A2 (en) * 2007-09-04 2010-06-16 Eugene Technology Co., Ltd. Substrate processing apparatus
EP2417627A4 (en) * 2009-04-06 2015-09-23 Lam Res Corp CONTAINMENT RING EARTHED WITH LARGE SURFACE
US8721797B2 (en) 2009-12-11 2014-05-13 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
US9564344B2 (en) 2009-12-11 2017-02-07 Novellus Systems, Inc. Ultra low silicon loss high dose implant strip
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US10370757B2 (en) 2013-02-04 2019-08-06 Ulvac, Inc. Thin substrate processing device
US11282718B2 (en) 2014-02-27 2022-03-22 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US20170316921A1 (en) * 2016-04-29 2017-11-02 Retro-Semi Technologies, Llc Vhf z-coil plasma source
KR20190078657A (ko) * 2016-11-25 2019-07-04 어플라이드 머티어리얼스, 인코포레이티드 프로세스 키트 및 기판을 프로세싱하기 위한 방법
WO2018098100A1 (en) * 2016-11-25 2018-05-31 Applied Materials, Inc. Process kit and method for processing a substrate
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
KR102488946B1 (ko) 2016-11-25 2023-01-13 어플라이드 머티어리얼스, 인코포레이티드 프로세스 키트 및 기판을 프로세싱하기 위한 방법
US11489106B2 (en) 2019-12-23 2022-11-01 Spts Technologies Limited Method of plasma etching
US11664232B2 (en) 2019-12-23 2023-05-30 Spts Technologies Limited Method and apparatus for plasma etching
US20220148861A1 (en) * 2020-11-10 2022-05-12 Tokyo Electron Limited Substrate processing apparatus

Also Published As

Publication number Publication date
WO2005104203A1 (ja) 2005-11-03
CN1914714B (zh) 2011-09-28
US20120231553A1 (en) 2012-09-13
CN1914714A (zh) 2007-02-14
JPWO2005104203A1 (ja) 2008-03-13
JP4421609B2 (ja) 2010-02-24

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