US20070019305A1 - Method for correcting a lithography projection objective, and such a projection objective - Google Patents

Method for correcting a lithography projection objective, and such a projection objective Download PDF

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Publication number
US20070019305A1
US20070019305A1 US11/479,574 US47957406A US2007019305A1 US 20070019305 A1 US20070019305 A1 US 20070019305A1 US 47957406 A US47957406 A US 47957406A US 2007019305 A1 US2007019305 A1 US 2007019305A1
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United States
Prior art keywords
mirror
pupil plane
pupil
correcting
plane
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Abandoned
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US11/479,574
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English (en)
Inventor
Wilhelm Ulrich
Thomas Okon
Norbert Wabra
Toralf Gruner
Boris Bittner
Volker Graeschus
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Priority to US11/479,574 priority Critical patent/US20070019305A1/en
Assigned to CARL ZEISS SMT AG reassignment CARL ZEISS SMT AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WABRA, NORBERT, BITTNER, BORIS, GRAESCHUS, VOLKER, GRUNER, TORALF, DR., OKON, THOMAS, ULRICH, WILHELM
Publication of US20070019305A1 publication Critical patent/US20070019305A1/en
Assigned to CARL ZEISS SMT GMBH reassignment CARL ZEISS SMT GMBH A MODIFYING CONVERSION Assignors: CARL ZEISS SMT AG
Priority to US13/187,003 priority patent/US8174676B2/en
Priority to US13/440,226 priority patent/US8659744B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction

Definitions

  • the invention relates to a method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror.
  • the invention further relates to such a projection objective.
  • Projection objectives of the above-named type are used in the lithographic, in particular microlithographic production of semiconductors, in the case of which an object provided with a structure, that is also denoted as reticle, is imaged by means of the projection objective onto a carrier, which is denoted as a wafer.
  • the carrier is provided with a photosensitive layer upon the exposure of which by means of light through the projection objective the structure of the object is transferred onto the photosensitive layer. After development of the photosensitive layer, the desired structure is produced on the carrier, the exposure operation being repeated in multiple fashion in some circumstances.
  • a projection objective that is used in the case of such a method and has an optical arrangement composed of a number of lenses and at least one mirror is also denoted as catadioptric.
  • catadioptric projection objective is described, for example, in document WO 2004/019128 A2.
  • catadioptric projection objectives are gaining evermore in importance since, by comparison with purely refractive (dioptric) projection objectives, they enable an overall economic compromise for the purpose of fulfilling the manifold customer-specific requirements.
  • the at least one, and the frequently several mirrors of such catadioptric projection objectives can be subdivided into two classes, specifically those with catoptric power and those without catoptric power.
  • the mirrors with catoptric power serve the purpose chiefly of supplying a dispersion-free catoptric power and a suitable, mostly positive contribution to the correction of the image surface. It is possible thereby to save a number of lenses by comparison with classic, purely refractive designs.
  • Mirrors without catoptric power which are also termed folding mirrors, serve the purpose of beam guidance and are generally necessitated on the basis of design requirements.
  • the at least one mirror can be a mirror with or without catoptric power.
  • a problem with catadioptric projection objectives is the narrow tolerance requirements placed on the optically operative surfaces of the mirrors. These narrow tolerance requirements are caused by the fact that the optical effect of a surface deformation of a mirror is more than twice as large as is the case with the surface of a lens. The reason for this is that a deformation ⁇ z of a mirror is traversed by the incident and the reflected light beams, that is to say twice, while a surface deformation ⁇ z of a lens surface is traversed only once, and moreover a lens has a refractive index of usually >1.
  • the surface failures of mirrors can be caused by inaccuracies in production, or by layer stresses of the mirror coatings. Failures can also occur in removing and installing mirrors because of the impossibility of always ensuring exact reproducibility of the previous installed position. Deformations owing to layer stresses frequently occur for the fact that the coating and the substrate of the mirror have different coefficients of thermal expansion such that the shape of the mirror is changed upon irradiation with light. A similar effect can occur owing to relaxation processes after coating the substrate of the mirror.
  • Defective mirror surfaces lead to wavefront errors in the projection light, and thus to a defective imaging of the object (reticle) onto the carrier (wafer) that cannot be sustained in view of the currently required miniaturization of the semiconductor structures to be produced.
  • One possibility for compensating image defects of a catadioptric projection objective that are caused by one or more defective mirrors could consist in correcting the defective mirror surface or surfaces directly by means of a local aspherization by polishing or ion beam etching.
  • this sometimes turns out to be very complicated, since the defective mirror or mirrors need to be removed and reinstalled from and in the projection objective several times in some circumstances, and this places particularly high requirements on the adjustment of the reinstalled mirror or mirrors.
  • the optical effect of defects of mirrors is substantially greater than the optical effect of defects of lenses.
  • because of engineering in accuracy in the aspherization process on mirror surfaces it is frequently not even possible for the mirror surface to be corrected directly.
  • An alternative possibility to this end consists in aspherizing an optically operative lens surface in the immediate neighborhood of the relevant defective mirror.
  • a further object of the invention is to specify an improved catadioptric projection objective in the case of which image defect that are caused by at least one defective mirror are at least diminished.
  • a method for correcting at least one image defect of a projection objective of a lithography projection exposure machine comprising the steps of:
  • a projection objective of a lithography projection exposure machine comprising an optical arrangement composed of a plurality of lenses and at least one mirror, wherein the at least one mirror has an optically operative surface that can cause at least one image defect of the optical arrangement, and wherein for the correction of the image defect at least one optically operative lens surface among the lens surfaces of the lenses is selected, at which the magnitude of a ratio VL of principal ray height h L H to marginal ray height h R L comes at least closest to a ratio VM of principal ray height h M H to marginal ray height h M R at the optical active surface of the at least one mirror, preferably selected such that VL additionally has the same sign as VM.
  • the invention proceeds from the idea that it need not be absolutely necessary to correct the defect or deformation of the at least one defective mirror itself or in the vicinity of the mirror, but that it suffices to compensate their optical effect.
  • This compensation for example the optical effect of an aspherization of an optically operative surface, is a function not only of the shape of the local aspherization, but is also determined by the position of the optical surface in the projection optics.
  • the ratio of principal ray height to marginal ray height on the optical surface in the projection objective is important for the dependence of the optical effect, for example, of an aspherization of the position of said optical surface.
  • Principal ray height is understood as the ray height of the principal ray of a field point of the object field having maximum field height in absolute terms.
  • Marginal ray height is the height of a ray of maximum aperture emanating from the middle of the object field.
  • An “optically operative surface” within the meaning of the present invention is to be understood in general, and such a surface of a mirror can be focusing, defocusing or merely beam-guiding (beam folding).
  • An optically operative surface is generally that surface which is used by the light in the installed state of the mirror in the projection objective.
  • the invention is based on the fact that the first step in optimally selecting the at least one lens surface provided for compensating the wavefront error caused by a deformation of the at least one mirror is to determine the position of the mirror inside the projection objective with the aid of the—signed—ratio of principal ray height to marginal ray height on the optically operative surface of the mirror.
  • the further step then consists in selecting for the compensation or correction of the aberration at least one optically operative lens surface among the surfaces of the lenses at which the ratio of principal ray height to marginal ray height comes as close as possible to the ratio of principal ray height to marginal ray height at the optically operative mirror surface, or is even the same.
  • a lens surface that is at least approximately conjugate to the defective mirror surface is selected that need not necessarily be adjacent to the mirror.
  • the correction of the at least one image defect is carried out by providing the at least one lens surface, selected as previously described, with an aspherization, or at least one lens that has the selected lens surface is assigned an actuator such that the at least one image defect can be corrected by means of a positional adjustment, for example by tilting or displacement, or by rotation in a plane perpendicular to the optical axis of the lens, or by a combination of these positional adjustments, and/or the at least one lens, which has the selected lens surface, is assigned an actuator such that the at least one aberration can be corrected by a deformation of the lens.
  • a positional adjustment for example by tilting or displacement, or by rotation in a plane perpendicular to the optical axis of the lens, or by a combination of these positional adjustments
  • the at least one lens, which has the selected lens surface is assigned an actuator such that the at least one aberration can be corrected by a deformation of the lens.
  • FIG. 1 shows a catadioptric projection objective in accordance with a first exemplary embodiment
  • FIG. 2 shows a catadioptric projection objective in accordance with a second exemplary embodiment
  • FIG. 3 shows a catadioptric projection objective in accordance with a third exemplary embodiment
  • FIG. 4 shows a catadioptric projection objective in accordance with a fourth exemplary embodiment
  • FIG. 5 shows a catadioptric projection objective in accordance with a fifth exemplary embodiment
  • FIG. 6 shows a catadioptric projection objective in accordance with a sixth exemplary embodiment
  • FIG. 7 shows a catadioptric projection objective in accordance with a seventh exemplary embodiment.
  • a catadioptric projection objective has an optical arrangement composed of a plurality of lenses and at least one mirror.
  • the at least one mirror can have a defective optically operative surface that is responsible for the at least one image defect.
  • the position of the optically operative surface of the at least one mirror inside the projection objective is firstly determined.
  • This determination is performed with the aid of the ratio VM of principal ray height h M H to marginal ray height h M R on the optically operative surface of the at least one mirror.
  • the principal ray height is understood as the height of the principal ray of a field point of the object field with a maximum field height.
  • Marginal ray height is understood as the height of a ray with maximum aperture emanating from the middle of the object field.
  • At least one optically operative lens surface that is at least approximately conjugate to the optically operative mirror surface is determined from among the totality of the surfaces of the lenses present in the projection objective at which, thus, the magnitude of a ratio VL of principal ray height h L H to marginal ray height h M R comes at least close to the ratio VM, and deviates from this, for example, by less than 20%, preferably less than 15%, and further preferably less than 10%.
  • Determination of the ratio of principal ray height to marginal ray height at the individual optically operative surfaces of the projection objective follows from the design data of the projection objective such as lens curvatures, lens material, mirror curvatures, mutual spacing of the optical elements, object position, image plane position as well as aperture size and field size.
  • an optically operative surface can be denoted as near-pupil or, synonymously, as lying in the vicinity of a pupil plane when the magnitude of the ratio V of principal ray height to marginal ray height on the surface is less than 1/n
  • an optically operative surface can be denoted as near-field or, synonymously, as lying in the vicinity of a field plane when the magnitude of the ratio V of principal ray height to marginal ray height on this surface is greater than n/10.
  • the value 5, preferably 10, very preferably 20 is to be selected for the parameter n.
  • An optically operative element is denoted as near-pupil or as lying in the vicinity of a pupil plane when at least one of its optically operative surfaces lies near a pupil.
  • An optically operative element is denoted as near the field or as lying in the vicinity of a field plane when at least one of its optically operative surfaces lies near a field.
  • the former are at least approximately the planes perpendicular to the optical axis where roughly all the principal rays of all field points that do not lie on the optical axis cross the optical axis. That is to say, the above ratio V of principal ray height to marginal ray height is approximately zero.
  • the latter are at least approximately the planes perpendicular to the optical axis, where all the aperture rays belonging to the respective field points are united at least approximately for all the field points. That is to say, the above ratio V of principal ray height to marginal ray height lies—in terms of magnitude—approximately at infinity.
  • the latter are split up into object plane, intermediate images and image plane.
  • the sign of the ratio V of principal ray height to marginal ray height changes with each passage through a pupil plane or a field plane.
  • FIG. 1 a first exemplary embodiment of a projection objective is now described in the case of which the method according to the invention is applied.
  • the projection objective is provided in FIG. 1 with the general reference numeral 10 .
  • the projection objective 10 has three lens groups and three mirrors, the first lens group having lenses L 11 to L 110 , the second lens group having lenses L 21 and L 22 , and the third lens group having lenses L 31 to L 315 .
  • R denotes the object plane or reticle plane, and W denotes the image plane or wafer plane.
  • the projection objective 10 in FIG. 1 has four field planes F 1 to F 4 , specifically the object field F 1 , the field F 2 between the folding mirror M 31 and the mirror CM, close to the folding mirror M 31 , a field F 3 between the mirror CM and the folding mirror M 33 , near the mirror M 32 and the image field F 4 .
  • the projection objective 10 in FIG. 1 has three pupil planes, specifically a pupil plane P 1 between the lenses L 14 and L 15 , a pupil plane P 2 on the mirror CM and a pupil plane P 3 between lenses L 310 and L 311 .
  • the mirror CM is therefore stationed in the vicinity of a pupil plane in which by definition the ratio of principal ray height to marginal ray height is approximately 0. Its possible surface deformations that give rise to image defects can be corrected by selecting for the correction at least one lens surface of the lenses L 11 to L 315 that are arranged in the vicinity of one of the three pupil planes P 1 to P 3 .
  • the following preferably come into consideration as such lens surfaces:
  • the two folding mirrors M 31 and M 33 are stationed in the vicinity of the field planes F 2 and F 3 and are separated from one another by the pupil plane P 2 and the field planes F 2 and F 3 . It follows therefrom that the ratio h M H/h M R on the surfaces of the mirrors M 31 and M 33 are comparable in terms of magnitude, but differ in terms of sign. Consequently, it is necessary to provide at least two further optically operative lens surfaces for the aspherization.
  • the lens surface S 620 of the lens L 110 or the lens surface S 618 of the lens L 19 can be selected, or the lens surface S 652 of the lens L 315 can be selected for correcting or compensating surface deformations of the folding mirror M 31 .
  • the lens surface S 632 of the lens L 31 or the lens surface S 634 of the lens L 32 or else, for example, the lens surface S 601 or the lens surface S 602 of the lens 11 , at which the ratio of principal ray height to marginal ray height is suitable both in terms of magnitude and in terms of sign can be selected for correcting or compensating surface deformations of the folding mirror M 33 .
  • the correction of the image defects caused by deformations of the mirrors M 31 , M 33 and CM can be performed by providing aspherizations on the above-named selected lens surfaces or on individual ones of these lens surfaces.
  • the lenses associated with the above-named lens surfaces can be provided with actuators (not illustrated) such that these lenses can easily be adjusted in position, for example by tilting or displacement, or by rotation in a plane perpendicular to the optical axis, or by a combination of these positional adjustments of the lenses selected for the correction.
  • actuators can also be such that it effects a deformation of the lens.
  • the projection objective 10 in accordance with FIG. 1 therefore has a mirror CM in the vicinity of a pupil plane P 2 and two mirrors M 31 , M 33 in the vicinity of field planes F 2 , F 3 of the projection objective.
  • the ratios VM 1 and VM 2 have different signs on the mirrors M 31 , M 33 .
  • Optically operative lens surfaces of the projection objective 10 that are arranged in the vicinity of a pupil plane P 1 to P 3 are selected for correcting deformations of the mirror CM.
  • Such optically operative surfaces of the lenses of the projection objective 10 that are stationed in the vicinity of the field planes F 1 to F 4 of the projection objective 10 are selected for correcting image defects caused by deformations of the mirrors M 31 and M 33 , the ratios VL of principal ray height to marginal ray height on these lens surfaces having different signs.
  • Those lenses that can be selected as correction lenses are darkened in FIG. 1 and denoted as K 31 , K 31′ , K 32 , K 32′ , K 33 , K 33′ and K 33′′ .
  • the correction lenses are also darkened in the following figures and provided with “K”.
  • FIG. 2 Illustrated in FIG. 2 is a projection objective that is provided with the general reference numeral 20 and has lenses E 1 to E 13 as well as six mirrors M 21 to M 26 . Reference is made to document WO 02/44786 A2 for a detailed description of this projection objective 20 .
  • the projection projective 20 has a field plane F 1 (object plane), a field plane F 2 (intermediate image plane) and a field plane F 3 (image plane). Furthermore, the projection objective 20 has a pupil plane P 1 and a pupil plane P 2 .
  • At least one lens surface that is stationed in the vicinity of a pupil plane of the projection objective 20 , and a lens surface that is stationed in the vicinity of a field plane of the projection objective 20 and whose ratio of principal ray height to marginal ray height corresponds in terms of the sign to the corresponding ratio of the mirror M 25 are selected for correcting possible deformations on the above-named mirrors.
  • the correction of the projection objective 20 is followed, in turn, preferably by providing an aspherization on the selected lens surfaces, and/or by assigning actuators to the lenses that have these lens surfaces such that the lenses selected for correction can be tilted and/or displaced and/or deformed.
  • the method according to the invention can also be applied to such projection objectives whose optical arrangement has at least two mirrors that are stationed in the vicinity of at least one pupil plane of the projection objective, and at which the ratios VM 1 and VM 2 have different signs, at least two lens surfaces being selected for the correction that are arranged in the vicinity of at least one pupil plane of the projection objective 20 , and at which the ratios VL 1 and VL 2 have different signs.
  • the method according to the invention can be applied to a projection objective that has an optical arrangement composed of at least two mirrors that are arranged in the vicinity of at least one field plane of the projection objective, and at which the ratios VM 1 and VM 2 have the same sign, in this case at least one lens surface being selected for the correction that is arranged in the vicinity of a field plane of the projection objective and at which the ratio VL has the same sign as the ratios VM 1 and VM 2 .
  • FIG. 3 A further projection objective provided with the general reference numeral 30 is illustrated in FIG. 3 .
  • the projection objective 30 has a first, purely dioptric part G 1 that images the object plane R onto a first intermediate image (field 2 (F 2 )) via a first pupil plane P 1 .
  • the projection objective 30 further has a second, catoptric part G 2 that comprises mirrors M 11 and M 12 and which images the first intermediate image F 2 onto a second intermediate image (field 3 (F 3 )) via a second pupil plane P 2 .
  • the two mirrors M 11 and M 12 are concave mirrors and are arranged near-field and are situated upstream and downstream, respectively, of the second pupil plane P 2 .
  • the projection objective 30 further has a third, dioptric part G 3 that images the second intermediate image F 3 onto the image plane W via a third pupil plane P 3 .
  • the near-field lens K 11 upstream of the first pupil plane P 1 can be selected as correction lens for correcting aberrations that can be caused by the mirror M 11 .
  • the near-field correction lens K 11′ downstream of the second intermediate image F 3 and upstream of the third pupil plane P 3 can be used for correcting aberrations caused by the mirror M 11 .
  • the near-field lens K 12 downstream of the first pupil plane P 1 and upstream of the first intermediate image F 2 , and/or the near-field lens K 12′ downstream of the third pupil plane P 3 are used for correcting aberrations that are caused by the mirror M 12 .
  • the lenses K 11 , K 11′ , K 12 , K 12′ can be lenses with at least one surface provided for the aspherization, and/or the lenses that can be varied in their position and/or are deformable.
  • FIG. 4 A projection objective provided with the general reference numeral 40 and that is described in more detail in WO 2004/107011, FIG. 14, with regard to the principle of its design, is illustrated in FIG. 4 . To this extent, reference is made to that document.
  • the projection objective 40 has a first, catadioptric part with elements L 1 to M 63 that images the object plane R onto a first intermediate image F 2 via a first pupil plane P 1 and that includes at least one near-pupil mirror M 61 and at least one near-field mirror M 63 downstream of the first pupil plane P 1 .
  • the projection objective 40 further has a second, catoptric part with elements M 64 to M 66 that images the first intermediate image F 2 onto a second intermediate image F 3 via a second pupil plane P 2 and includes at least one near-field mirror M 64 and a near-pupil mirror M 65 .
  • the projection objective 40 has a third, dioptric part that comprises lenses L 5 to L 20 and images the second intermediate image F 3 onto the image W (field 4 ) via a third pupil plane P 3 .
  • it being possible additionally or as an alternative to provide a near-pupil correction lens K 61′ ( L 15 ) in the vicinity of the third pupil plane P 3 for correcting the mirrors M 61 and M 65 .
  • the correction lenses K 61 to K 65′ are lenses with at least one surface provided for the aspherization, and/or lenses that can be varied in their position, and/or deformable lenses.
  • FIG. 5 A further projection objective that is provided with the general reference numeral 50 is illustrated in FIG. 5 .
  • the projection objective 50 has a first, dioptric part that images the object plane R onto a first intermediate image F 2 via a first pupil plane P 1 . Adjoining the first, dioptric part, the projection objective 50 then has a second, catadioptric part that images the first intermediate image F 2 onto a second intermediate image F 3 via a second image plane P 2 and which includes at least one near-field mirror M 51 upstream of the second pupil plane P 2 and at least one near-pupil mirror M 52 .
  • the projection objective 50 has a third, catadioptric part that images the second intermediate image F 3 onto a third intermediate image F 4 via a third pupil plane P 3 , and a near-pupil mirror M 53 .
  • a near-field correction lens K 51 is provided upstream of the first pupil plane P 1 for correcting the mirrors M 51 and M 54 .
  • a near-field correction lens K 51′ is provided downstream of the first intermediate image F 2 and upstream of the second pupil plane P 2 for correcting the mirrors M 51 and M 54 .
  • a near-field correction lens K 51′′ is provided downstream of the second intermediate image F 3 and upstream of the third pupil plane P 3 for correcting the mirrors M 51 and M 54 .
  • a near-pupil correction lens K 52 is provided in the vicinity of the first pupil plane P 1 for correcting the mirrors M 52 and M 53 .
  • a near-pupil correction lens K 52′ is provided in the vicinity of the second pupil plane P 2 for correcting the mirrors M 52 and M 53 .
  • a near-pupil correction lens K 52′′ is provided in the vicinity of the third pupil plane P 3 for correcting the mirrors M 52 and M 53 .
  • a near-pupil correction lens K 52′ is provided in the vicinity of the fourth pupil plane P 4 for correcting the mirrors M 52 and M 53 .
  • the correction lenses K 51 to K 52′ are lenses with at least one surface provided for the aspherization, and/or lenses that can be varied in their position, and/or deformable lenses.
  • FIG. 6 illustrates a further projection objective that is provided with the general reference numeral 60 .
  • the projection objective 60 is a variant of the design of the projection objective 10 in FIG. 1 .
  • it has a first, dioptric part that images the object plane onto a first intermediate image F 2 via a first pupil plane P 1 .
  • the projection objective 60 has a second, catadioptric part that images the first intermediate image F 2 onto a second intermediate image F 3 via a second pupil plane P 2 and which has a first near-field mirror M 71 upstream of the second pupil plane P 2 , and a near-pupil mirror M 72 .
  • the projection objective 60 has a third catadioptric part that images the second intermediate image F 3 onto the image W (F 4 ) via a third pupil plane P 3 , and includes a second near-field mirror M 73 upstream of the third pupil plane P 3 .
  • the mirrors M 71 and M 73 are folding mirrors like the mirrors M 31 and M 33 , and the mirror M 72 is a concave mirror.
  • a correction lens K 71 is provided upstream of the first pupil plane P 1 for correcting the first mirror M 71 and third mirror M 73 .
  • a near-field correction lens K 71′ is provided downstream of the second field plane F 3 (second intermediate image) and upstream of the third pupil plane P 3 for correcting the mirror M 71 and the mirror M 73 .
  • a near-pupil lens K 72 is provided in the vicinity of the first pupil plane P 1 , and/or a near-pupil lens K 72′ is provided in the vicinity of the second pupil plane P 2 , and/or a near-pupil lens K 72′′ is provided in the vicinity of the third pupil plane P 3 for correcting the mirror M 72 .
  • the correction lenses K 71 to K 72′′ can be lenses with at least one surface provided for the aspherization, and/or lenses that can be varied in their position, and/or deformable lenses.
  • FIG. 7 illustrates a projection objective provided with the general reference numeral 70 and which is described in more detail in document EP 1 318 425 A2 with regard to its design principle, to which extent reference is made to it.
  • the projection objective 70 has a first catadioptric part with elements L 11 to M 42 that images the object plane R onto a first intermediate image F 2 via a first pupil plane P 1 , and at least one near-pupil mirror M 41 and at least one near-field mirror M 42 downstream of the first pupil plane P 1 . Moreover, the projection objective 70 has a second, dioptric part that images the intermediate image F 2 onto the image (field 3 ) via a second pupil plane P 2 .
  • a near-pupil correction lens K 41′ is provided in the vicinity of the second pupil plane P 2 for correcting the mirror M 41 .
  • the correction lenses K 41 , K 41′ , K 42 can be lenses with at least one surface provided for the aspherization, and/or lenses that can be varied in their position, and/or deformable lenses.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US11/479,574 2005-07-01 2006-06-30 Method for correcting a lithography projection objective, and such a projection objective Abandoned US20070019305A1 (en)

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US13/187,003 US8174676B2 (en) 2005-07-01 2011-07-20 Method for correcting a lithography projection objective, and such a projection objective
US13/440,226 US8659744B2 (en) 2005-07-01 2012-04-05 Method for correcting a lithography projection objective, and such a projection objective

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US13/440,226 Active 2026-07-06 US8659744B2 (en) 2005-07-01 2012-04-05 Method for correcting a lithography projection objective, and such a projection objective

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US9280058B2 (en) 2004-06-10 2016-03-08 Carl Zeiss Smt Gmbh Projection objective for a microlithographic projection exposure apparatus
US8902407B2 (en) 2004-06-10 2014-12-02 Carl Zeiss Smt Gmbh Projection objective for a microlithographic projection exposure apparatus
US8064041B2 (en) 2004-06-10 2011-11-22 Carl Zeiss Smt Gmbh Projection objective for a microlithographic projection exposure apparatus
US20080123069A1 (en) * 2004-06-10 2008-05-29 Carl Zeiss Smt Ag Projection Objective For a Microlithographic Projection Exposure Apparatus
US9588445B2 (en) 2004-06-10 2017-03-07 Carl Zeiss Smt Gmbh Projection objective for a microlithographic projection exposure apparatus
US9977338B2 (en) 2004-06-10 2018-05-22 Carl Zeiss Smt Gmbh Projection objective for a microlithographic projection exposure apparatus
US8174676B2 (en) 2005-07-01 2012-05-08 Carl Zeiss Smt Gmbh Method for correcting a lithography projection objective, and such a projection objective
US8659744B2 (en) 2005-07-01 2014-02-25 Carl Zeiss Smt Gmbh Method for correcting a lithography projection objective, and such a projection objective
US8159648B2 (en) 2006-01-30 2012-04-17 Carl Zeiss Smt Gmbh Method and device for the correction of imaging defects
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US10620543B2 (en) 2006-01-30 2020-04-14 Carl Zeiss Smt Gmbh Method and device for the correction of imaging defects
US11003088B2 (en) 2006-01-30 2021-05-11 Carl Zeiss Smt Gmbh Method and device for the correction of imaging defects
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US8891172B2 (en) 2006-09-21 2014-11-18 Carl Zeiss Smt Gmbh Optical element and method
US8508854B2 (en) 2006-09-21 2013-08-13 Carl Zeiss Smt Gmbh Optical element and method
EP2650730A2 (de) 2006-09-21 2013-10-16 Carl Zeiss SMT GmbH Optisches Element und Verfahren
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US8068276B2 (en) 2007-01-23 2011-11-29 Carl Zeiss Smt Gmbh Projection objective for lithography
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US20080174858A1 (en) * 2007-01-23 2008-07-24 Carl Zeiss Smt Ag Projection objective for lithography
US8325322B2 (en) 2007-08-24 2012-12-04 Carl Zeiss Smt Gmbh Optical correction device
US20100201958A1 (en) * 2007-08-24 2010-08-12 Carl Zeiss Smt Ag Optical correction device
US9366977B2 (en) 2009-05-16 2016-06-14 Carl Zeiss Smt Gmbh Semiconductor microlithography projection exposure apparatus
US20130135599A1 (en) * 2009-10-21 2013-05-30 GM Global Technology Operations LLC Dynamic projection method for micro-truss foam fabrication

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US20120188636A1 (en) 2012-07-26
US8174676B2 (en) 2012-05-08
JP2007013179A (ja) 2007-01-18
US8659744B2 (en) 2014-02-25
JP5047544B2 (ja) 2012-10-10
US20110279803A1 (en) 2011-11-17

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