US20060269745A1 - Nano wires and method of manufacturing the same - Google Patents

Nano wires and method of manufacturing the same Download PDF

Info

Publication number
US20060269745A1
US20060269745A1 US11/362,046 US36204606A US2006269745A1 US 20060269745 A1 US20060269745 A1 US 20060269745A1 US 36204606 A US36204606 A US 36204606A US 2006269745 A1 US2006269745 A1 US 2006269745A1
Authority
US
United States
Prior art keywords
substrate
mask layer
nano wires
ion injection
nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/362,046
Other languages
English (en)
Inventor
Eun-kyung Lee
Byoung-Iyong Choi
Sang-jun Choi
Hoon Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHO, SANG-JUN, CHOI, BYOUNG-LYONG, KIM, HOON, LEE, EUN-KYUNG
Publication of US20060269745A1 publication Critical patent/US20060269745A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D1/00—Steering controls, i.e. means for initiating a change of direction of the vehicle
    • B62D1/02—Steering controls, i.e. means for initiating a change of direction of the vehicle vehicle-mounted
    • B62D1/04—Hand wheels
    • B62D1/06—Rims, e.g. with heating means; Rim covers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2410/00—Constructional features of vehicle sub-units
    • B60Y2410/13—Materials or fluids with special properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
US11/362,046 2005-02-25 2006-02-27 Nano wires and method of manufacturing the same Abandoned US20060269745A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050016185A KR100624461B1 (ko) 2005-02-25 2005-02-25 나노 와이어 및 그 제조 방법
KR10-2005-0016185 2005-02-25

Publications (1)

Publication Number Publication Date
US20060269745A1 true US20060269745A1 (en) 2006-11-30

Family

ID=37039709

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/362,046 Abandoned US20060269745A1 (en) 2005-02-25 2006-02-27 Nano wires and method of manufacturing the same

Country Status (3)

Country Link
US (1) US20060269745A1 (ko)
JP (1) JP2006231507A (ko)
KR (1) KR100624461B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11316022B2 (en) * 2019-11-19 2022-04-26 International Business Machines Corporation Ion implant defined nanorod in a suspended Majorana fermion device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101138865B1 (ko) * 2005-03-09 2012-05-14 삼성전자주식회사 나노 와이어 및 그 제조 방법
JP6224538B2 (ja) * 2014-07-18 2017-11-01 勇 城之下 量子ドットを有する材料の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033972A (en) * 1997-11-15 2000-03-07 Electronics And Telecommunications Research Institute Growing method of GaAs quantum dots using chemical beam epitaxy
US6274007B1 (en) * 1999-11-25 2001-08-14 Sceptre Electronics Limited Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
US20020130311A1 (en) * 2000-08-22 2002-09-19 Lieber Charles M. Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US20050205927A1 (en) * 2004-03-19 2005-09-22 Hideji Tsujii Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563679A (en) 1979-06-22 1981-01-14 Mitsubishi Electric Corp Formation of metallic pattern
JPS59108317A (ja) 1982-12-13 1984-06-22 Mitsubishi Electric Corp 電極配線形成法
KR950010038B1 (ko) * 1991-11-11 1995-09-06 금성일렉트론주식회사 알루미늄 배선 형성 방법
KR970003732B1 (en) * 1994-01-14 1997-03-21 Lg Semicon Co Ltd Method of forming the multilayer wiring on the semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033972A (en) * 1997-11-15 2000-03-07 Electronics And Telecommunications Research Institute Growing method of GaAs quantum dots using chemical beam epitaxy
US6274007B1 (en) * 1999-11-25 2001-08-14 Sceptre Electronics Limited Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon
US20020130311A1 (en) * 2000-08-22 2002-09-19 Lieber Charles M. Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US20050205927A1 (en) * 2004-03-19 2005-09-22 Hideji Tsujii Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11316022B2 (en) * 2019-11-19 2022-04-26 International Business Machines Corporation Ion implant defined nanorod in a suspended Majorana fermion device
US11948985B2 (en) 2019-11-19 2024-04-02 International Business Machines Corporation Ion implant defined nanorod in a suspended Majorana fermion device

Also Published As

Publication number Publication date
KR20060094753A (ko) 2006-08-30
KR100624461B1 (ko) 2006-09-19
JP2006231507A (ja) 2006-09-07

Similar Documents

Publication Publication Date Title
EP1700935B1 (en) Nanowire structure and method of manufacturing the same
US7625812B2 (en) Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires
US8084337B2 (en) Growth of III-V compound semiconductor nanowires on silicon substrates
US7781315B2 (en) Finfet field effect transistor insulated from the substrate
US6544870B2 (en) Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same
JP2008533732A (ja) ナノ構造ｐｎ接合を含む発光ダイオードの製造方法及び当該方法によって得られるダイオード
US8558256B2 (en) Light emitting diode using semiconductor nanowire and method of fabricating the same
CN104769732A (zh) 纳米角锥体大小的光电子结构及其制造方法
US7192873B1 (en) Method of manufacturing nano scale semiconductor device using nano particles
KR100723418B1 (ko) 실리콘 나노 와이어, 실리콘 나노 와이어를 포함하는반도체 소자 및 실리콘 나노 와이어 제조 방법
JP6526227B2 (ja) オプトエレクトロニクス半導体エレメントとオプトエレクトロニクス半導体エレメントを製造する方法
JP2010521801A (ja) 広バンドギャップ半導体デバイス
CN102760798A (zh) 一种发光二极管的制备方法
US20150115321A1 (en) Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device
KR20090105951A (ko) 전자 장치 및 그 제조 방법
CN102760805A (zh) 发光二极管
KR101946010B1 (ko) 대면적 갈륨 나이트라이드 기판을 포함하는 구조체 및 그 제조방법
US20060269745A1 (en) Nano wires and method of manufacturing the same
US7112862B2 (en) Light emitting and/or detecting device and method of manufacturing the same
KR101199753B1 (ko) 나노전극 제조 방법
EP3367447B1 (en) Nanowire device and method of manufacturing thereof
KR20120111141A (ko) 식각을 이용한 나노 구조의 형성방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, EUN-KYUNG;CHOI, BYOUNG-LYONG;CHO, SANG-JUN;AND OTHERS;REEL/FRAME:017645/0445

Effective date: 20060227

STCB Information on status: application discontinuation

Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION