US20060175383A1 - Wire bonding method - Google Patents

Wire bonding method Download PDF

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Publication number
US20060175383A1
US20060175383A1 US11/347,479 US34747906A US2006175383A1 US 20060175383 A1 US20060175383 A1 US 20060175383A1 US 34747906 A US34747906 A US 34747906A US 2006175383 A1 US2006175383 A1 US 2006175383A1
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United States
Prior art keywords
wire
bonding
bump
capillary
interconnect wiring
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Abandoned
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US11/347,479
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English (en)
Inventor
Tatsunari Mii
Toshihiko Toyama
Shinsuke Tei
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Shinkawa Ltd
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Shinkawa Ltd
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Assigned to KABUSHIKI KAISHA SHINKAWA reassignment KABUSHIKI KAISHA SHINKAWA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MII, TATSUNARI, TEI, SHINSUKE, TOYAMA, TOSHIHIKO
Publication of US20060175383A1 publication Critical patent/US20060175383A1/en
Priority to US12/384,643 priority Critical patent/US7934634B2/en
Abandoned legal-status Critical Current

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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Definitions

  • the present invention relates to a wire bonding method and more particularly to a wire bonding method well suited to low-loop implementation.
  • Japanese Patent Application Laid-Open (Kokai) Nos. H9-51011 and 2004-172477 solve the above-described problems.
  • the methods disclosed in these publications takes the following steps: a ball formed at the tip end of a wire is first bonded to a die pad to form a compression-bond ball; next, after raising the capillary, it is moved in a direction opposite from an interconnect wiring (or an outer lead of a lead frame); then, after raising the capillary, it is moved to directly above the pad; the capillary is next lowered, and the wire is pressure-bonded onto the pressure-bond ball; and then, the capillary is moved onto the interconnect wiring, bonding the wire to the interconnect wiring.
  • the object of the present invention is to provide a wire bonding method that provides a further or improved low-loop implementation.
  • die pad or merely “pad”
  • interconnect wiring that is a second bond point
  • this bump forming process including a step of cutting and bending a wire protruding from a tip end of a capillary in a lateral direction thus forming a bent part in the wire;
  • the above object is accomplished by another series of unique processes of the present invention for a wire bonding method that performs first bonding to an interconnect wiring that is a first bond point and second bonding to a die pad that is a second bond point, thus connecting the interconnect wiring and die pad; and in the present invention, the method includes sequentially:
  • this bump forming process including a step of cutting and bending a wire protruding from a tip end of a capillary in a lateral direction thus forming a bent part in the wire;
  • first bonding process for bonding the bent part of the wire to the interconnect wiring thus forming a lower first bonding part on the interconnect wiring, the first bonding process further raising and moving the capillary above the lower first bonding part then lowering the capillary and superimposing and connecting the wire onto the lower first bonding part thus forming an upper first bonding part on the lower first bonding;
  • the bent part is formed by holding the wire with a clamper, and moving the damper and capillary in the lateral direction, thus cutting the wire.
  • the bent part can be formed by holding the wire with a clamper, and then moving the capillary and damper parallel to the direction for joining the interconnect wiring and die pad and toward the interconnect wiring, thus cutting the wire.
  • the bump forming process comprises the ordered steps of:
  • the bump forming process may include the ordered steps of:
  • a bump is formed on a pad of a die (“die pad” or “pad”) that is the first bond point; and, when a wire is cut from the bump, a bent part is formed in the wire protruding from the tip end of the capillary; as a result, when bonding is performed to the first bond point, the bent part is formed at the tip end of the wire without using a special apparatus and thus the bent part is formed by an existing wire bonding apparatus.
  • the loop height at the first bond point can be made lower, and low wire loop implementation is effected.
  • the wire is bonded to the bump directly as a second bond point, the loop height at the second bond point can be made lower, and low wire loop implementation is effected. Furthermore, the bent part is bonded to the interconnect wiring that is the first bond point to first form a lower first bonding part, and then the wire is bent and superimposed onto that lower first bonding part to form an upper first bonding part. Accordingly, the reliability of the bonding strength to the interconnect wiring is significantly enhanced.
  • the bent part is formed, when cutting the wire from the bump, by moving the capillary parallel to the interconnect wiring and the bump to be connected next and then toward the interconnect wiring that is the second bond point; as a result, the direction of the bent part of the wire tip end can be bent in a direction suitable for the next bonding, and, in conjunction therewith, the shape of the wire loop for bonding that bent part to the interconnect wiring that is the second bond point, after bonding it to the bump, can be made lower. For this reason also, low wire loop implementation can be effected.
  • the ball is mashed when forming the bump until the thickness is such that tearing-off occurs from the lower part of the ball neck portion when the wire is pulled; accordingly, the bump height is extremely low, the loop height on the pad can be made even lower, and further low wire loop implementation is effected.
  • FIG. 2 shows further steps that continue on from step (h) of FIG. 1 ;
  • FIG. 3 shows steps according to a second embodiment of the wire bonding method of the present invention, step (a) of FIG. 3 continuing on from step (f) of FIG. 1 ;
  • FIG. 5 shows steps according to a third embodiment of the wire bonding method of the present invention
  • FIG. 6 shows further steps that continue on from step (f) of FIG. 5 ;
  • FIG. 7 shows steps according to a fourth embodiment of the wire bonding method of the present invention, step (a) of FIG. 7 continuing on from step (d) of FIG. 5 ;
  • FIG. 8 shows further steps that continue on from step (f) of FIG. 7 .
  • a first embodiment of the wire bonding method of the present invention is described with reference to FIG. 1 and FIG. 2 .
  • a die 3 on which a pad 2 of a die (or “die pad”) is formed is mounted on a circuit board 1 comprising a ceramic substrate or print board or lead frame or the like.
  • An interconnect wiring (or an outer lead or conductive pathways) 4 is formed on the circuit board 1 .
  • a ball 11 is formed by an electric torch (not shown in the drawing) at the tip end of a wire 10 passed through a damper 5 and inserted through a capillary 6 , after which the damper 5 is in an open condition.
  • step (b) the capillary 6 descends (or lowered) and bonds the ball 11 to the pad 2 that is the first bond point. Thereby, a portion of the ball 11 bulges up into the through-hole 6 a in the capillary 6 , and a pillar portion 13 is formed on a bump 12 .
  • step (c) the capillary 6 is raised so that the edge 6 b at the lower end of the capillary 6 is positioned within the height of the pillar portion 13 .
  • step (d) the damper 5 and capillary 6 are moved together in a direction toward the interconnect wiring 4 side that is the second bond point, and a small thickness portion 14 is formed at the connection between the bump 12 and the wire 10 .
  • the damper 5 closes, and the damper 5 and capillary 6 ascend (or raised) together by a fixed amount.
  • step (f) the damper 5 and capillary 6 move together to the side of the interconnect wiring 4 that is the second bond point.
  • the wire 10 is cut from the small thickness portion 14 , and the bump 12 is formed on the pad 2 .
  • a bent part 15 is formed which is bent in a direction toward the bump 12 side. The bump forming process is thus completed.
  • step (g) the bent part 15 is moved so as to be positioned above the bump 12 .
  • step (h) after the damper opens, the capillary 6 descends, bonds the bent part 15 to the bump 12 , and forms the first bonding part 16 . Also, the damper 5 is brought in an open condition, completing the first bonding process.
  • the wire 10 is connected to the interconnect wiring 4 that is the second bond point (as seen conventionally).
  • step (a) the capillary 6 ascends in step (a), and, in step (b), the capillary 6 moves toward the interconnect wiring 4 and pays out the wire 10 , and then descends, bonds the wire 10 to the interconnect wiring 4 , and makes that the second bonding part 17 .
  • step (c) the damper 5 and capillary 6 ascend together, during which ascension the damper 5 closes, and the wire 10 is cut from the base of the second bonding part 17 , completing the second bonding process.
  • the bump 12 is formed on the pad 2 that is the first bond point, and the bent part 15 is formed in the wire protruding at the tip end of the capillary 6 when the wire 10 is cut from that bump 12 , the bent part 15 at the tip end of the wire can be formed by an existing wire bonding apparatus when bonding is made for the first bond point without providing a special apparatus. Moreover, because the bent part 15 is bonded directly to the bump 12 , the first bond point loop height can be lowered. More specifically, low wire loop implementation is effected.
  • the above-described bent part 15 is formed by moving the capillary 6 both in parallel with the bump 12 and interconnect wiring 4 that are connected next when cutting the wire 10 from the bump 12 , and to the side of the interconnect wiring 4 that is the second bond point.
  • the direction of the bent part 15 at the tip end of the wire can be bent in a direction suitable for the next bonding while, at the same time, after bonding that bent part 15 to the bump 12 , the shape of the wire loop for bonding to the interconnect wiring 4 that is the second bond point can be made lower. For this reason also, low wire loop implementation can be effected.
  • the capillary 6 is raised so that the edge 6 b at the lower end of the capillary 6 is positioned within the height of the pillar portion 13 formed on the bump 12 , next the capillary 6 is moved in a lateral direction and the small thickness portion 14 is formed at the connection between the bump 12 and the wire 10 , and then, after raising the capillary 6 by a fixed amount, the wire 10 is pulled and cut from the small thickness portion 14 , whereupon the upper surface of the bump 12 becomes flat; as a result, the interconnect wiring direction for the wire 10 connected to that bump 12 becomes substantially horizontal, and low wire loop implementation is effected.
  • FIG. 1 A second embodiment of the wire bonding method of the present invention is described in FIG. 1 , FIG. 3 , and FIG. 4 .
  • This embodiment in addition to being such that the bump 12 is formed on the pad 2 in steps (a) to (f) in FIG. 1 , is the same as the above-described embodiment up to the formation of the bent part 15 that is bent in the direction on the side of the bump 12 at the lower surface of the capillary 6 .
  • the bent part 15 is bonded onto the interconnect wiring 4 (though in the previous embodiment the bent part 15 is bonded onto the bump 12 ). More specifically, though in the first embodiment, the pad 2 is the first bond point and the interconnect wiring 4 is the second bond point, in the second embodiment, conversely, the interconnect wiring 4 is the first bond point and the pad 2 is the second bond point.
  • the capillary 6 is moved upward from the interconnect wiring 4 in step (a) of FIG. 3 .
  • step (b) the damper 5 closes, the capillary 6 descends, bonds the bent part 15 to the interconnect wiring 4 that is the first bond point, and forms a lower first bonding part 20 . Also, the damper 5 is brought in an open condition.
  • step (c) the capillary 6 is raised, and then is moved above the lower first bonding part 20 in step (d).
  • step (e) the damper closes, the capillary 6 is lowered, the wire portion 21 shown in the illustration for step (d) is bent, and the wire portion 21 is bonded onto the lower part first bond point, forming an upper first bonding part 22 , thus making it a first bonding part 3 and completing the first bonding process.
  • step (e) the wire 10 is connected onto the bump 12 formed on the pad 2 that is the second bond point.
  • step (f) the capillary 6 ascends, and it moves toward the pad 2 in step (a) of FIG. 4 , paying out the wire 10 , and then descends, bonds the wire 10 to the bump 12 , and makes it a second bonding part 24 .
  • step (b) of FIG. 4 the damper 5 and capillary 6 ascend together, the damper 5 closes during that ascension, and the wire 10 is cut from the base of the second bonding part 24 , thus completing the second bonding process.
  • the first bond point has become the interconnect wiring 4 .
  • the bonding strength will be weak if the bent part 15 is bonded only to the interconnect wiring 4 .
  • the bent part 15 is bonded to the first bond point to first form the lower first bonding part 20 , and then the wire portion 21 is bent and superimposed on that lower first bonding part 20 to form the upper first bonding part 22 .
  • the reliability of the bonding strength to the first bond point is significantly enhanced.
  • the bump 12 is formed on the pad 2 , and the wire 10 is bonded directly to that bump 12 as the second bond point, the loop height on the pad 2 side becomes lower. In other words, low wire loop implementation is effected.
  • the bump 12 is formed on the pad 2 that is the second bond point, and the protruding wire bent part 15 is formed at the tip end of the capillary 6 when the wire 10 is cut from that bump 12 , the bent part 15 at the wire tip end can be formed by an existing wire bonding apparatus, without providing a special apparatus, when bonding is made for the first bond point.
  • FIG. 5 and FIG. 6 A third embodiment of the wire bonding method of the present invention is described in FIG. 5 and FIG. 6 . Members that are the same as or correspond to those in the above-described embodiments are described in designating them with the same symbol. This third embodiment differs from the above-described first embodiment only in the method of forming the bump 12 .
  • step (b) the capillary 6 descends and bonds the ball 11 to the pad 2 that is the first bond point.
  • the ball 11 is mashed to the limit.
  • the ball 11 is mashed until the height H of the lower part of the ball neck portion becomes 0 to 5 ⁇ m or so (thickness at which the wire 10 will tear off from the lower part of the ball neck portion when it is pulled diagonally upward).
  • the height H of the lower part of the ball neck portion will be the thickness of the small thickness portion 30 .
  • step (d) of FIG. 5 the damper closes, the bent part 15 of the wire is moved so as to be positioned above the bump 12 .
  • step (f) the damper opens, the capillary 6 descends, bonding the bent part 15 to the bump 12 , thus forming the first bonding part 16 .
  • the clamper 5 is brought in an open condition.
  • step (a) shown in FIG. 6 the capillary 6 ascends, moves in step (b) toward the interconnect wiring 4 and pays out the wire 10 , then descends and bonds the wire 10 to the interconnect wiring 4 , making it the second bonding part 17 .
  • step (c) the damper 5 and capillary 6 ascend together, the damper 5 closes during that ascension, and the wire 10 is curt from the base of the second bonding part 17 .
  • this third embodiment in particular, the ball 11 is mashed during the formation of the bump 12 until the thickness thereof becomes such that it will tear away from the lower part of the ball neck portion when the wire 10 is pulled; as a result, the height of the bump 12 is made extremely low. For that reason, in the method of the third embodiment, the loop height on the pad 2 can be made lower, and greater low wire loop implementation is effected, than with the above-described first embodiment.
  • a fourth embodiment of the wire bonding method of the present invention is performed with steps (a) to (d) in FIG. 5 and steps of FIGS. 7 and 8 .
  • the fourth embodiment in addition to being such that the bump 12 is formed on the pad 2 in the steps (a) to (d) shown in FIG. 5 , is the same as the above-described embodiment up to the formation of the ball neck portion 31 and the bent part 15 that is bent in the direction on the side of the bump 12 at the lower surface of the capillary 6 . After that, the same processes as those for the second embodiment (see FIGS. 3 and 4 ) are performed.
  • the damper 5 opens, and the capillary 6 is moved in step (a) shown in FIG. 7 to above the interconnect wiring 4 .
  • step (b) the capillary 6 descends, bonds the bent part 15 to the interconnect wiring 4 that is the first bond point, and forms the lower first bonding part 20 .
  • step (c) the capillary 6 is raised, and in step (d), the capillary 6 is moved above the lower first bonding part 20 .
  • step (e) the capillary 6 is lowered, the wire portion 21 show in the illustration for step (d) is bent, the wire portion 21 is bonded onto the lower first bonding part 20 , whereupon the upper first bonding part 22 is formed, and that is made the first bonding part 23 .
  • step (d) the wire 10 is connected onto the bump 12 formed on the pad 2 that is the second bond point. More specifically, in step (f) shown in FIG. 7 , the capillary 6 ascends and moves in step (a) shown in FIG. 8 toward the pad 2 and pays out the wire 10 , then it descends and bonds the wire 10 to the bump 12 , making it the second bonding part 24 . Next, in step (b), the damper 5 and capillary 6 ascend together, the damper 5 closes during that ascension, and the wire 10 is cut from the base of the second bonding part 24 .
  • the ball 11 is, as in the third embodiment, crushed during the formation of the bump 12 until the thickness thereof becomes such that it will tear away from the lower part of the ball neck portion when the wire 10 is pulled.
  • the height of the bump 12 can be made extremely low.
  • the loop height on the pad 2 can further be lowered, and greater low wire loop implementation is effected than the second embodiment.

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KR20060090567A (ko) 2006-08-14
US20090194577A1 (en) 2009-08-06
US7934634B2 (en) 2011-05-03
KR100765376B1 (ko) 2007-10-10
TW200629447A (en) 2006-08-16

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