TWI827950B - 打線接合裝置及半導體裝置的製造方法 - Google Patents
打線接合裝置及半導體裝置的製造方法 Download PDFInfo
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- 238000005304 joining Methods 0.000 claims abstract description 24
- 229910052573 porcelain Inorganic materials 0.000 claims description 149
- 239000004020 conductor Substances 0.000 claims description 26
- 238000010008 shearing Methods 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 15
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Abstract
一種半導體裝置的製造方法,利用導線將第一接合點與第二接合點之間連接,且所述半導體裝置的製造方法包括:利用球形接合在第一接合點形成壓接球與球頸的球形接合步驟;在球頸與壓接球之間形成減小了剖面面積的薄壁部的薄壁部形成步驟;使瓷嘴上升而抽出導線尾端後,使瓷嘴向第二接合點的方向移動,在薄壁部分離導線尾端與壓接球的導線尾端分離步驟;以及使瓷嘴下降並將已分離的導線尾端的側面接合在壓接球上的導線尾端接合步驟。
Description
本發明涉及一種打線接合裝置的結構及使用此打線接合裝置的半導體裝置的製造方法。
近年來,要求半導體晶片的薄型化。為了滿足此要求,需要將利用打線接合形成的環形導線的高度抑制得低。因此,一直以來,提出了很多抑制環高度的低環技術。
例如,提出一種在進行球形接合(ball bonding)後,使瓷嘴(capillary)上升而使導線尾端延伸出後,使瓷嘴上升而切斷導線尾端,將切斷的導線尾端接合在壓接球上,由此將環高度抑制得低的接合方法(例如,參照專利文獻1)。
另外,提出一種方法,在第一接合點進行球形接合後,使瓷嘴水平移動來削去壓接球上的球頸,然後使瓷嘴上升而使導線尾端延伸出,將延伸出的導線尾端的側面多次按壓在壓接球上之後,使瓷嘴朝向第二接合點移動,由此抑制環高度(例如,參照專利文獻2)。
[現有技術文獻]
[專利文獻]
日本專利特開2017-112197號公報
[發明所要解決的問題]
但是,即使如專利文獻1中記載的現有技術那樣使瓷嘴向正上方上升來進行導線尾端的延出、切斷,導線尾端也不位於瓷嘴的面部的下側,因此難以利用瓷嘴將導線尾端接合在壓接球上,因此,存在實現性的問題。
另外,在專利文獻2的方法中,按壓部分的導線尾端的剖面面積變小,存在導線的環形狀受到限制的情況。
因此,本發明的目的在於提供一種能夠形成環形狀的自由度大的低環形導線的打線接合裝置。
[解決問題的技術手段]
本發明的半導體裝置的製造方法是利用導線將第一接合點與第二接合點之間連接的半導體裝置的製造方法,其特徵在於包括:準備步驟,準備打線接合裝置,所述打線接合裝置包括供導線插通的瓷嘴、及使瓷嘴移動的移動機構;球形接合步驟,在插通於瓷嘴的導線的前端形成無空氣球後,使瓷嘴的前端下降至壓接高度,將無空氣球與第一接合點接合而形成壓接球與壓接球的上側的球頸;薄壁部形成步驟,使瓷嘴的前端在水平方向上移動,在球頸與壓接球之間形成減小了剖面面積的薄壁部;導線尾端分離步驟,使瓷嘴上升而抽出導線尾端後,使瓷嘴向第二接合點的方向移動,在薄壁部將導線尾端與壓接球分離;以及導線尾端接合步驟,使瓷嘴下降而將分離的導線尾端的側面接合在壓接球上。
由於通過薄壁部形成步驟形成減小了球頸與壓接球的連接部分的剖面面積的薄壁部之後將導線尾端從壓接球分離,因此可以小的拉伸荷重將導線尾端從壓接球分離。另外,由於使瓷嘴向第二接合點的方向移動,在薄壁部將導線尾端與壓接球分離,因此切斷的導線尾端進入瓷嘴的第一接合點側下方。因此,可將導線尾端的側面接合在壓接球上,使導線延伸的方向成為水平方向而可降低環高度。
在本發明的半導體裝置的製造方法中,也可包括在形成薄壁部之後,使瓷嘴向第二接合點的方向呈圓弧狀地往復移動而使導線彎曲變形的導線尾端彎曲步驟。
如此,由於使導線彎曲變形,因此在將導線尾端從壓接球分離時,可保持導線尾端進入瓷嘴的第一接合點側的下方的狀態,可確實地將導線尾端的側面接和在壓接球上,而可降低環高度。
在本發明的半導體裝置的製造方法中,薄壁部形成步驟也可使瓷嘴上升到比壓接高度高的剪切高度,並使瓷嘴在水平方向上移動。
由此,可確實地使球頸變形而形成薄壁部。
在本發明的半導體裝置的製造方法中,薄壁部形成步驟也可在形成薄壁部時使瓷嘴在水平方向上往復動作。
由此,可極力減小球頸與壓接球的連接部分的剖面面積,並且可抑制連接部分的剖面面積大小的偏差。其結果,在切斷導線尾端時,能夠使從瓷嘴的前端延伸出的導線尾端的形狀穩定。
在本發明的半導體裝置的製造方法中,導線尾端分離步驟也可在薄壁部將導線尾端從壓接球分離時,使瓷嘴朝向第二接合點的方向向斜上方移動。
由此,可抑制切斷的導線尾端與壓接球接觸而再次接合,而可提高打線接合的穩定性。
在本發明的半導體裝置的製造方法中,導線尾端接合步驟中,可在將導線尾端的側面接合到壓接球上時,使瓷嘴的第一接合點側的面部移動到壓接球的與第二接合點相反一側的端部上方之後,使瓷嘴下降而利用瓷嘴的面部將彎曲變形的導線尾端的側面接合在壓接球的與第二接合點相反一側的端部上。
由此,可將導線尾端的側面確實地接合在壓接球上。
本發明的打線接合裝置是利用導線將第一接合點與第二接合點之間連接的打線接合裝置,其特徵在於包括:瓷嘴,供導線插通;移動機構,使瓷嘴移動;以及控制部,控制移動機構的驅動,且控制部是在插通於瓷嘴的導線的前端形成無空氣球後,使瓷嘴的前端下降到壓接高度,使無空氣球與第一接合點接合而形成壓接球與壓接球上側的球頸,且使瓷嘴的前端在水平方向上移動,在球頸與壓接球之間形成減小了剖面面積的薄壁部,在使瓷嘴上升而抽出導線尾端後,使瓷嘴向第二接合點的方向移動,在薄壁部將導線尾端與壓接球分離,
且使瓷嘴下降而將已分離的導線尾端的側面接合在壓接球上。
在本發明的打線接合裝置中,可為:控制部是在形成球頸後,使瓷嘴上升到比壓接高度高的剪切高度,並使瓷嘴在水平方向上往復移動而形成薄壁部,在形成薄壁部之後,使瓷嘴向第二接合點的方向呈圓弧狀地往復移動,使導線彎曲變形,且在薄壁部將導線尾端從壓接球分離時,使瓷嘴朝向第二接合點的方向向斜上方移動,當將導線尾端的側面接合在壓接球上時,使瓷嘴的第一接合點側的面部移動到壓接球的與第二接合點相反一側的端部上方之後,使瓷嘴下降而利用瓷嘴的面部將彎曲變形的導線尾端的側面接合在壓接球的與第二接合點相反一側的端部上。
[發明的效果]
本發明可提供一種能夠形成環形狀自由度大的低環形導線的打線接合裝置。
以下,參照附圖對實施方式的打線接合裝置100進行說明。如圖1所示那樣,實施方式的打線接合裝置100包括:基座10、XY平臺11、接合頭12、Z方向馬達13、接合臂14、超聲波喇叭15、瓷嘴20、夾持器17、放電電極18、接合載台19、及控制部60。再者,在以下的說明中,將接合臂14或超聲波喇叭15的延伸方向作為X方向,將在水平面上與X方向成直角的方向作為Y方向,將上下方向作為Z方向進行說明。
XY平臺11安裝在基座10上,使搭載在上側的部件沿XY方向移動。
接合頭12安裝在XY平臺11上並通過XY平臺11向XY方向移動。在接合頭12中收納有Z方向馬達13、及由Z方向馬達13驅動的接合臂14。Z方向馬達13具有定子13b。接合臂14為根部14a與Z方向馬達13的定子13b相向,並繞Z方向馬達13的軸13a旋轉自如地安裝的轉子。
在接合臂14的X方向的前端安裝有超聲波喇叭15,在超聲波喇叭15的前端安裝有瓷嘴20。超聲波喇叭15通過未圖示的超聲波振子的振動對安裝於前端的瓷嘴20進行超聲波勵振。瓷嘴20如後面參照圖2說明的那樣,在內部設置有沿上下方向貫通的貫通孔21,在貫通孔21中插通有導線16。
另外,在超聲波喇叭15的前端的上側設有夾持器17。夾持器17開閉而進行導線16的握持、放開。
在接合載台19的上側設置有放電電極18。放電電極18也可安裝在設置於基座10上的未圖示的框架上。放電電極18在與插通瓷嘴20並從瓷嘴20的前端25延伸出的導線16之間進行放電,使導線16熔融而形成無空氣球40。
接合載台19吸附固定在上表面安裝有半導體晶片34的基板30,同時利用未圖示的加熱器加熱基板30與半導體晶片34。
構成轉子的接合臂14的根部14a利用接合頭12的Z方向馬達13的定子13b的電磁力如圖1中的箭頭71所示那樣旋轉時,安裝在超聲波喇叭15前端的瓷嘴20如箭頭72所示那樣向Z方向移動。另外,接合載台19通過XY平臺11而在XY方向上移動。因此,瓷嘴20通過XY平臺11及Z方向馬達13而在XYZ方向上移動。因此,XY平臺11與Z方向馬達13構成使瓷嘴20在XYZ方向上移動的移動機構11a。
XY平臺11、Z方向馬達13、夾持器17、放電電極18、及接合載台19連接於控制部60,基於控制部60的指令而驅動。控制部60利用包括XY平臺11及Z方向馬達13的移動機構11a,調整瓷嘴20的XYZ方向的位置,並且控制夾持器17的開閉、放電電極18的驅動、接合載台19的加熱。
控制部60是包括作為在內部進行信息處理的處理器的中央處理器(central processing unit,CPU)61、存儲動作程序或動作數據等的存儲器62的計算機。
接著,參照圖2說明瓷嘴20的結構。圖2是表示瓷嘴20的前端部的一例的圖。在瓷嘴20形成有沿中心線24的方向貫通的貫通孔21。在此貫通孔21中插通導線16。因此,貫通孔21的內徑d1比導線16的外徑d2大(d1>d2)。貫通孔21的下端呈圓錐狀擴展。所述呈圓錐狀擴展的錐形部被稱為倒角部22。另外,此圓錐狀的空間中最大的直徑(即最下端的直徑)被稱為倒角直徑d3。
瓷嘴20的下端面成為按壓圖1所示的無空氣球40的面部23。此面部23可以是平坦的水平面,也可以是隨著接近外側而向上方前進的傾斜面。將面部23的寬度、即,倒角部22與瓷嘴20的下端的外周的距離稱為“面部寬度W”。面部寬度W通過倒角直徑d3與瓷嘴20的外周直徑d4,以W=(d4-d3)/2計算。另外,在以下的說明中,將瓷嘴20的下端的中心線24上的點稱為瓷嘴20的前端25。
如圖2中點劃線所示那樣,將瓷嘴20的前端25加工到高度h1的點a而將圖1所示的無空氣球40按壓在焊盤35上時,無空氣球40被面部23按壓扁平化而形成直徑d5且厚度hb的扁平圓柱狀的壓接球41。另外,形成無空氣球40的金屬的一部分從倒角部22進入貫通孔21而形成球頸42,此球頸42包括與壓接球41的上側連接的圓錐狀部42a、及與圓錐狀部42a的上側連接的圓柱狀部42b。
圖3是利用打線接合裝置100形成的環形導線52的示意圖。在半導體晶片34上配設有多個焊盤35,在基板30上設置有多個引線31。打線接合裝置100利用環形導線52將位於此焊盤35上的第一接合點P1與位於引線31上的第二接合點P2連接。
在第一接合點P1形成將導線16的一端按壓於焊盤35而形成的第一接合部50,從所述第一接合部50引出的環形導線52延伸到第二接合點P2。在第二接合點P2形成有將環形導線52的另一端按壓於引線31而形成的第二接合部51。此處,第二接合部51通常是將環形導線52推壓在引線31上而壓扁的針腳接合。
以下,參照圖4~圖9B對打線接合裝置100的形成第一接合部50、環形導線52、及第二接合部51的動作進行說明。在以下的說明中,將從第一接合點P1觀察而接近第二接合點P2的方向稱為“正向”,將遠離第二接合點P2的方向、或者從第一接合點P1觀察而與第二接合點P2相反的方向稱為“反向”。各圖中所示的“F”符號表示正向方向,“R”符號表示反向方向。另外,圖4所示的箭頭81~箭頭91對應於圖5~圖9B中所示的箭頭81~箭頭91。
在形成第一接合部50的情況下,控制部60的處理器即CPU 61首先開放夾持器17,驅動控制XY平臺11及Z方向馬達13,使瓷嘴20的前端25移動至放電電極18的附近。然後,CPU 61使放電電極18與從瓷嘴20的前端25延伸出的導線16之間發生放電,將從瓷嘴20的前端25延伸出的導線16成形為無空氣球40。
繼而,CPU 61如圖5所示那樣執行球形接合步驟。如圖4所示那樣,CPU 61使瓷嘴20的中心線24的XY坐標與第一接合點P1的中心線36的XY坐標一致,如圖4、圖5所示的箭頭81那樣,使瓷嘴20的前端25朝向第一接合點P1下降到點a。此時,從焊盤35的上表面至瓷嘴20的前端25的高度h1、即,從焊盤35的上表面至點a的高度h1基於壓接球41的厚度hb(參照圖2)的目標值決定。以下,將此高度h1稱為“壓接高度h1”。
然後,如圖5所示那樣,利用瓷嘴20的面部23將無空氣球40按壓在焊盤35上。此時,也可經由超聲波喇叭15對瓷嘴20的前端25賦予超聲波振動。
瓷嘴20將無空氣球40按壓在焊盤35上時,如之前參照圖2說明的那樣,面部23與倒角部22將無空氣球40成形為壓接球41及球頸42。當形成壓接球41及球頸42後,CPU 61結束球形接合步驟。
接著,CPU 61如圖6A~圖6D所示那樣執行薄壁部形成步驟。CPU 61預先打開夾持器17。然後,如圖6A所示那樣,CPU 61驅動Z方向馬達13,使瓷嘴20的前端25如圖4、圖6A中所示的箭頭82那樣,僅上升高度Δhb至點b,使瓷嘴20的前端25的高度成為高度h2。以下,將高度h2稱為“剪切高度h2”。剪切高度h2是壓接球41的上端面與球頸42的上端面之間的高度,且是瓷嘴20的前端25位於球頸42的側面的高度。
接著,如圖6B所示,CPU 61在將瓷嘴20的前端25的高度保持在剪切高度h2的狀態下,驅動XY平臺11,如圖4、圖6B所示的箭頭83那樣,使瓷嘴20在朝向第二接合點P2的正向方向上水平移動距離Δxc至點c。由此,瓷嘴20的中心線24位於比第一接合點P1的中心線36更靠近第二接合點P2的位置。
接著,如圖6C所示那樣,CPU 61在將瓷嘴20的前端25的高度保持在剪切高度h2的狀態下,與圖6B相反,驅動XY平臺11,如圖4、圖6C所示的箭頭84那樣,使瓷嘴20沿著從第二接合點P2朝向第一接合點P1的反向方向水平移動距離Δxd至點d。由於Δxd大於圖6B所示的Δxc,所以如圖6C所示那樣,瓷嘴20的中心線24位於比第一接合點P1更靠近反向側。
進而,CPU 61在將瓷嘴20的前端25的高度保持在剪切高度h2的狀態下,驅動XY平臺11,如圖4、圖6D所示的箭頭85那樣,使瓷嘴20沿著朝向第二接合點P2的正向方向水平移動距離Δxe至點e。由於Δxe比圖6C所示的Δxd小,所以如圖6D所示那樣,瓷嘴20的中心線24位於比第一接合點P1更靠反向側、且穿過壓接球41的與第二接合點P2相反的一側(反向側)的端部45的位置。
如圖6B至圖6D所示那樣,將瓷嘴20的前端25的高度保持在剪切高度h2,使瓷嘴20的前端25在水平方向上朝向正向側及反向側往復移動時,如圖6C、圖6D所示那樣,球頸42的一部分在剪切高度h2處被瓷嘴20的前端25剪切斷裂而在水平方向上削掉。由此,形成正向側的剪切面44及反向側的剪切面43。此處,正向側的剪切面44出現在壓接球41的上端面附近。另外,反向側的剪切面43出現在球頸42的下端面附近。在剪切面43和壓接 球41的與第二接合點P2相反的一側(反向側)的端部45的上表面之間,空有微小的間隙。在正向側的剪切面44與反向側的剪切面43之間,形成連接球頸42與壓接球41之間的細的連接部46。連接部46是剖面面積比導線16減少的薄壁部。
如此,使瓷嘴20的前端25在水平方向上朝向正向側及反向側往復移動,形成剪切面43、剪切面44及連接部46時,可極力減小連接部46的剖面面積,並且可抑制連接部46的剖面面積大小的偏差。
接著,如圖7A~圖7C所示那樣,CPU 61執行導線尾端彎曲步驟。CPU 61如圖7A所示那樣驅動Z方向馬達13,使瓷嘴20的前端25如圖4、圖7A中所示的箭頭86那樣上升到點f,使瓷嘴20的前端25的高度成為高度h3。以下,高度h3稱為“移動高度h3”。移動高度h3比剪切高度h2高。此時,球頸42與壓接球41之間通過連接部46連接,夾持器17打開,因此瓷嘴20上升後,導線尾端47從瓷嘴20的前端25抽出。
使瓷嘴20的前端25上升到移動高度h3後,CPU 61使瓷嘴20的前端25如圖4、圖7B中所示的箭頭87那樣從點f呈圓弧狀地移動到點g。圓弧狀的移動也可沿著以圖7A所示的點e為中心、以點f與點e的距離為半徑的圓弧而移動到高度h4的點g。由此,導線尾端47從連接部46向正向側彎曲而下側的側面朝向壓接球41的上端面彎曲。
接著,與圖7B相反,CPU 61使瓷嘴20的前端25如圖4、圖7C中所示的箭頭88那樣從點g圓弧狀地移動到點f,使瓷嘴20的前端25的位置返回到至f。由此,導線尾端47在從連接部46朝向正向側彎曲後,成為向反向側彎曲的形狀。
接著,如圖8所示那樣,CPU 61執行導線尾端分離步驟。如圖4、圖8所示那樣,CPU 61關閉夾持器17,驅動XY平臺11及Z方向馬達13,使瓷嘴20的前端25朝向第二接合點P2的方向向斜上方移動至高度h5的點h。通過此移動,從瓷嘴20的前端25延伸出的導線尾端47以從連接部46朝向第二接合點P2的方向向斜上方延伸的方式變形。另外,移動時,由於CPU 61關閉夾持器17,因此通過移動,連接部46被瓷嘴20及夾持器17朝向第二接合點P2的方向而向斜上方拉伸。由此,如圖8所示那樣,連接部46斷裂,形成壓接球側斷裂面48及導線尾端側斷裂面49。在連接部46斷裂時,如圖8所示那樣,導線尾端47從瓷嘴20的前端25朝向第一接合點P1朝著反向側而向斜下方延伸,並繞到瓷嘴20的反向側的面部23的下側。
接著,CPU 61如圖9A、圖9B所示那樣執行導線尾端接合步驟。如圖4的箭頭90所示那樣,CPU 61驅動XY平臺11及Z方向馬達13,使瓷嘴20的前端25從點h上升到點i後,從點i朝向反向方向移動。然後,如圖9A所示那樣,使瓷嘴20的前端25的位置移動到高度h6的點j,以使瓷嘴20的第一接合點側(反向側)的面部23位於壓接球41的反向側的端部45的上方。
接著,CPU 61如圖4、圖9B所示的箭頭91那樣,使瓷嘴20的反向側的面部23朝向壓接球41的反向側的端部45下降至點k。然後,如圖9B所示那樣,利用瓷嘴20的反向側的面部23將從瓷嘴20的前端25朝向反向側而向斜下方延伸的導線尾端47的側面按壓在壓接球41的反向側的端部45上。由此,導線尾端47接合在端部45上,形成第一接合部50。此時,從焊盤35的上表面到瓷嘴20的前端25的高度h7、即,從焊盤35的上表面到點k的高度h7基於第一接合部50的厚度的目標值決定。
如圖9B所示那樣,第一接合部50接合在壓接球41的反向側的端部45上,第二接合點P2的一側沿著壓接球41上的剪切面44在水平方向上朝向第二接合點P2延伸。
接著,CPU 61執行針腳接合步驟。CPU 61打開夾持器17,如圖4所示的箭頭92那樣,使瓷嘴20上升,使環形導線52從瓷嘴20的前端25延伸出後,如圖4所示的點劃線的箭頭93所示那樣,使瓷嘴20的前端25環形化,而使瓷嘴20的中心線24的位置對準第二接合點P2的中心線37(參照圖3)的位置。然後,將瓷嘴20的前端25按壓在基板30的引線31上,而將環形導線52的側面針腳接合在引線31上,形成第二接合部51。
由此,如圖3、圖10所示那樣,環形導線52成為從接合在壓接球41的反向側的端部45上的第一接合部50越過壓接球41的剪切面44之上而朝向第二接合點P2在水平方向上延伸的形狀。
再者,在圖4中,簡化記載了瓷嘴20的前端25的環形化的軌跡,但根據要形成的環形導線52的形狀,也可以設為各種路徑。
然後,CPU 61關閉夾持器17,使瓷嘴20上升,切斷導線16。如此,打線接合裝置100通過第一接合部50、環形導線52、及第二接合部51連接如圖3所示的第一接合點P1、及第二接合點P2。
如以上所說明那樣,實施方式的打線接合裝置100通過薄壁部形成步驟而減小球頸42與壓接球41的連接部46的剖面面積後,使導線尾端47彎曲變形,使瓷嘴20朝向第二接合點P2移動而將導線尾端47從壓接球41切斷,所以可保持切斷的導線尾端47進入瓷嘴20的反向側的面部23的下側的狀態。因此,在使導線尾端47的側面接合在壓接球41上而形成第一接合部50時,第一接合部50的第二接合點側可沿著壓接球41之上在水平方向上朝向第二接合點P2延伸。因此,如圖3、圖10所示那樣,可將環形導線52形成為從壓接球41上水平地朝向第二接合點P2,而能夠降低環形導線52的高度。
另外,如專利文獻2所記載的現有技術那樣,即使不將導線尾端47的側面多次按壓在壓接球41上,也可使第一接合部50的第二接合點側沿著壓接球41之上在水平方向上朝向第二接合點P2延伸。因此,能夠使第一接合部50與環形導線52的連接部分的剖面面積比現有技術大,所以在針腳接合步驟中,能夠使瓷嘴20的前端25自由地移動,能夠增大環形導線52的形狀的自由度。
另外,在實施方式的打線接合裝置100中,在薄壁部形成步驟中,使瓷嘴20的前端25在水平方向上朝向正向側及反向側往復移動而極力減小連接部46的剖面面積,並且抑制連接部46的剖面面積大小的偏差。因此,在導線尾端分離步驟中,導線尾端47與連接部46的斷裂載荷小且恒定,因此在連接部46斷裂時進入瓷嘴20的反向側的面部23的下側的導線尾端47的形狀為無偏差、穩定的形狀。由此,形成在壓接球41的反向側的端部45上的第一接合部50的形狀恒定,能夠進行穩定的打線接合。
進而,在實施方式的打線接合裝置100中,在導線尾端分離步驟中,使瓷嘴20的前端25朝向第二接合點P2的方向向斜上方移動,因此可抑制切斷的導線尾端47與壓接球41接觸而再次接合,可提高打線接合的穩定性。
再者,也可通過進一步減小連接部46的剖面面積,進一步減小導線尾端47與連接部46的斷裂載荷,通過使瓷嘴20在水平方向上移動,進行導線尾端47的切斷。
10:底座
11:XY平臺
11a:移動機構
12:接合頭
13:Z方向馬達
13a:軸
13b:定子
14:接合臂
14a:根部
15:超聲波喇叭
16:導線
17:夾持器
18:放電電極
19:接合載台
20:瓷嘴
21:貫通孔
22:倒角部
23:面部
24、36、37:中心線
25:前端
30:基板
31:引線
34:半導體晶片
35:焊盤
40:無空氣球
41:壓接球
42:球頸
42a:圓錐狀部
42b:圓柱狀部
43、44:剪切面
45:端部
46:連接部
47:導線尾端
48:壓接球側斷裂面
49:導線尾端側斷裂面
50:第一接合部
51:第二接合部
52:環形導線
60:控制部
61:CPU
62:存儲器
71、72、81~93:箭頭
100:打線接合裝置
a~k:點
d1:內徑
d2:外徑
d3:倒角直徑
d4:外周直徑
d5:直徑
F:正向方向
h1~h7、Δhb:高度
hb:厚度
P1:第一接合點
P2:第二接合點
R:反向方向
W:面部寬度
Δxc、Δxd、Δxe:距離
圖1是表示實施方式的打線接合裝置的結構的立面圖。
圖2是安裝在實施方式的打線接合裝置的瓷嘴的剖面圖。
圖3是表示利用實施方式的打線接合裝置形成的環形導線的立面圖。
圖4是表示瓷嘴的前端的移動的說明圖。
圖5是表示使用實施方式的打線接合裝置進行打線接合時的球形接合步驟的說明圖。
圖6A是表示在使用實施方式的打線接合裝置進行打線接合時的薄壁部形成步驟中使瓷嘴略微上升的狀態的說明圖。
圖6B是表示在薄壁部形成步驟中,從圖6A所示的狀態使瓷嘴朝向正向方向水平移動的狀態的說明圖。
圖6C是表示在薄壁部形成步驟中,從圖6B所示的狀態使瓷嘴朝向反向方向水平移動的狀態的說明圖。
圖6D是表示在薄壁部形成步驟中,從圖6C所示的狀態使瓷嘴再次朝向正向方向水平移動少許的狀態的說明圖。
圖7A是表示在使用實施方式的打線接合裝置進行打線接合時的導線尾端彎曲步驟中,使瓷嘴上升而使導線尾端延伸出的狀態的說明圖。
圖7B是表示在導線尾端彎曲步驟中,從圖7A所示的狀態使瓷嘴朝向第二接合點呈圓弧狀地移動的狀態的說明圖。
圖7C是表示在導線尾端彎曲步驟中,從圖7B所示的狀態使瓷嘴的前端朝向第一接合點的方向呈圓弧狀地移動的狀態的說明圖。
圖8是表示使用實施方式的打線接合裝置進行打線接合時的導線尾端分離步驟的說明圖。
圖9A是表示在使用實施方式的打線接合裝置進行打線接合時的導線尾端接合步驟中使瓷嘴移動到壓接球上方的狀態的說明圖。
圖9B是表示在導線尾端接合步驟中,從圖9A所示的狀態使瓷嘴下降而將導線尾端的側面接合在壓接球上的狀態的說明圖。
圖10是表示使用實施方式的打線接合裝置將環形導線針腳式接合(stitch bonding)在第二接合點的狀態下的第一接合部與環形導線的說明圖。
36:中心線
81~93:箭頭
a~k:點
F:正向方向
h1~h7:高度
P1:第一接合點
P2:第二接合點
R:反向方向
Claims (7)
- 一種半導體裝置的製造方法,是利用導線將第一接合點與第二接合點之間連接的半導體裝置的製造方法,且其特徵在於包括:準備步驟,準備打線接合裝置,所述打線接合裝置包括供所述導線插通的瓷嘴、及使所述瓷嘴移動的移動機構;球形接合步驟,在插通於所述瓷嘴的所述導線的前端形成無空氣球後,使所述瓷嘴的前端下降至壓接高度,將所述無空氣球與所述第一接合點接合而形成壓接球與所述壓接球上側的球頸;薄壁部形成步驟,使所述瓷嘴的前端在水平方向上移動,在所述球頸與所述壓接球之間形成減小了剖面面積的薄壁部;導線尾端彎曲步驟,在形成所述薄壁部之後,使所述瓷嘴上升而抽出導線尾端,使所述瓷嘴向所述第二接合點的方向呈圓弧狀地往復移動而使抽出的所述導線尾端從所述第二接合點往所述第一接合點的方向彎曲變形,並使所述導線尾端形成面向所述第一接合點的側面;導線尾端分離步驟,使所述瓷嘴上升而抽出所述導線尾端後,使所述瓷嘴向所述第二接合點的方向移動,在所述薄壁部將所述導線尾端與所述壓接球分離;以及導線尾端接合步驟,使所述瓷嘴下降而將已分離的所述導線尾端的所述側面接合在所述壓接球上。
- 如請求項1所述的半導體裝置的製造方法,其中,所述薄壁部形成步驟中,使所述瓷嘴上升到比所述壓接高度高的剪切高度並使所述瓷嘴在水平方向上移動。
- 如請求項1或2所述的半導體裝置的製造方法,其中,所述薄壁部形成步驟中,在形成所述薄壁部時使所述瓷嘴在水平方向 上往復動作。
- 如請求項1或2所述的半導體裝置的製造方法,其中,所述導線尾端分離步驟中,當在所述薄壁部將所述導線尾端從所述壓接球分離時,使所述瓷嘴朝向所述第二接合點的方向而向斜上方移動。
- 如請求項1或2所述的半導體裝置的製造方法,其中,所述導線尾端接合步驟中,當將所述導線尾端的所述側面接合在所述壓接球上時,使所述瓷嘴的所述第一接合點側的面部移動到所述壓接球的與所述第二接合點相反一側的端部上方之後,使所述瓷嘴下降,利用所述瓷嘴的所述面部將已彎曲變形的所述導線尾端的所述側面接合在所述壓接球的與所述第二接合點相反一側的所述端部上。
- 一種打線接合裝置,利用導線將第一接合點與第二接合點之間連接,且所述打線接合裝置的特徵在於包括:瓷嘴,供所述導線插通;移動機構,使所述瓷嘴移動;以及控制部,控制所述移動機構的驅動,且所述控制部是在插通於所述瓷嘴的所述導線的前端形成無空氣球後,使所述瓷嘴的前端下降到壓接高度,將所述無空氣球與所述第一接合點接合而形成壓接球與所述壓接球上側的球頸,使所述瓷嘴的前端在水平方向上移動,在所述球頸與所述壓接球之間形成減小了剖面面積的薄壁部,在形成所述薄壁部之後,使所述瓷嘴上升而抽出導線尾端,使所述瓷嘴向所述第二接合點的方向呈圓弧狀地往復移動而使抽出的所述導線尾端 從所述第二接合點往所述第一接合點的方向彎曲變形,並使所述導線尾端形成面向所述第一接合點的側面,在使所述瓷嘴上升而抽出所述導線尾端後,使所述瓷嘴向所述第二接合點的方向移動,在所述薄壁部將所述導線尾端與所述壓接球分離,使所述瓷嘴下降而將已分離的所述導線尾端的所述側面接合在所述壓接球上。
- 如請求項6所述的打線接合裝置,其中,所述控制部是在形成所述薄壁部時,使所述瓷嘴上升到比所述壓接高度高的剪切高度,使所述瓷嘴在水平方向上往復移動,在所述薄壁部將所述導線尾端從所述壓接球分離時,使所述瓷嘴朝向所述第二接合點的方向向斜上方移動,當將所述導線尾端的所述側面接合在所述壓接球上時,使所述瓷嘴的所述第一接合點側的面部移動到所述壓接球的與所述第二接合點相反一側的端部上方之後,使所述瓷嘴下降而利用所述瓷嘴的所述面部將彎曲變形的所述導線尾端的所述側面接合在所述壓接球的與所述第二接合點相反一側的所述端部上。
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US20040164128A1 (en) * | 2003-02-17 | 2004-08-26 | Kabushiki Kaisha Shinkawa | Bump formation method and wire bonding method |
TW200421506A (en) * | 2003-02-17 | 2004-10-16 | Shinkawa Kk | Wire bonding method |
US20050054186A1 (en) * | 2003-09-04 | 2005-03-10 | Jin-Ho Kim | Wire bonding method, semiconductor chip, and semiconductor package |
US20060054665A1 (en) * | 2004-09-08 | 2006-03-16 | Kulicke And Soffa Industries Inc. | Methods for forming conductive bumps and wire loops |
US20060175383A1 (en) * | 2005-02-08 | 2006-08-10 | Kabushiki Kaisha Shinkawa | Wire bonding method |
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KR102488240B1 (ko) | 2023-01-13 |
WO2022013955A1 (ja) | 2022-01-20 |
JPWO2022013955A1 (zh) | 2022-01-20 |
KR20220009937A (ko) | 2022-01-25 |
TW202220069A (zh) | 2022-05-16 |
CN114207790A (zh) | 2022-03-18 |
US20220328450A1 (en) | 2022-10-13 |
JP7152079B2 (ja) | 2022-10-12 |
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