CN114207790A - 打线接合装置及半导体装置的制造方法 - Google Patents
打线接合装置及半导体装置的制造方法 Download PDFInfo
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Abstract
一种半导体装置的制造方法,利用导线将第一接合点与第二接合点之间连接,且所述半导体装置的制造方法包括:利用球形接合在第一接合点形成压接球与球颈的球形接合工序;在球颈与压接球之间形成减小了剖面面积的薄壁部的薄壁部形成工序;使瓷嘴上升而抽出导线尾端后,使瓷嘴向第二接合点的方向移动,在薄壁部分离导线尾端与压接球的导线尾端分离工序;以及使瓷嘴下降并将已分离的导线尾端的侧面接合在压接球上的导线尾端接合工序。
Description
技术领域
本发明涉及一种打线接合装置的结构及使用此打线接合装置的半导体装置的制造方法。
背景技术
近年来,要求半导体芯片的薄型化。为了满足此要求,需要将利用打线接合形成的环形导线的高度抑制得低。因此,一直以来,提出了很多抑制环高度的低环技术。
例如,提出一种在进行球形接合(ball bonding)后,使瓷嘴(capillary)上升而使导线尾端延伸出后,使瓷嘴上升而切断导线尾端,将切断的导线尾端接合在压接球上,由此将环高度抑制得低的接合方法(例如,参照专利文献1)。
另外,提出一种方法,在第一接合点进行球形接合后,使瓷嘴水平移动来削去压接球上的球颈,然后使瓷嘴上升而使导线尾端延伸出,将延伸出的导线尾端的侧面多次按压在压接球上之后,使瓷嘴朝向第二接合点移动,由此抑制环高度(例如,参照专利文献2)。
现有技术文献
专利文献
专利文献1:日本专利第4860128号公报
专利文献2:日本专利特开2019-176111号公报
发明内容
发明所要解决的问题
但是,即使如专利文献1中记载的现有技术那样使瓷嘴向正上方上升来进行导线尾端的延出、切断,导线尾端也不位于瓷嘴的面部的下侧,因此难以利用瓷嘴将导线尾端接合在压接球上,因此,存在实现性的问题。
另外,在专利文献2的方法中,按压部分的导线尾端的剖面面积变小,存在导线的环形状受到限制的情况。
因此,本发明的目的在于提供一种能够形成环形状的自由度大的低环形导线的打线接合装置。
解决问题的技术手段
本发明的半导体装置的制造方法是利用导线将第一接合点与第二接合点之间连接的半导体装置的制造方法,其特征在于包括:准备工序,准备打线接合装置,所述打线接合装置包括供导线插通的瓷嘴、及使瓷嘴移动的移动机构;球形接合工序,在插通于瓷嘴的导线的前端形成无空气球后,使瓷嘴的前端下降至压接高度,将无空气球与第一接合点接合而形成压接球与压接球的上侧的球颈;薄壁部形成工序,使瓷嘴的前端在水平方向上移动,在球颈与压接球之间形成减小了剖面面积的薄壁部;导线尾端分离工序,使瓷嘴上升而抽出导线尾端后,使瓷嘴向第二接合点的方向移动,在薄壁部将导线尾端与压接球分离;以及导线尾端接合工序,使瓷嘴下降而将分离的导线尾端的侧面接合在压接球上。
由于通过薄壁部形成工序形成减小了球颈与压接球的连接部分的剖面面积的薄壁部之后将导线尾端从压接球分离,因此可以小的拉伸荷重将导线尾端从压接球分离。另外,由于使瓷嘴向第二接合点的方向移动,在薄壁部将导线尾端与压接球分离,因此切断的导线尾端进入瓷嘴的第一接合点侧下方。因此,可将导线尾端的侧面接合在压接球上,使导线延伸的方向成为水平方向而可降低环高度。
在本发明的半导体装置的制造方法中,也可包括在形成薄壁部之后,使瓷嘴向第二接合点的方向呈圆弧状地往复移动而使导线弯曲变形的导线尾端弯曲工序。
如此,由于使导线弯曲变形,因此在将导线尾端从压接球分离时,可保持导线尾端进入瓷嘴的第一接合点侧的下方的状态,可确实地将导线尾端的侧面接和在压接球上,而可降低环高度。
在本发明的半导体装置的制造方法中,薄壁部形成工序也可使瓷嘴上升到比压接高度高的剪切高度,并使瓷嘴在水平方向上移动。
由此,可确实地使球颈变形而形成薄壁部。
在本发明的半导体装置的制造方法中,薄壁部形成工序也可在形成薄壁部时使瓷嘴在水平方向上往复动作。
由此,可极力减小球颈与压接球的连接部分的剖面面积,并且可抑制连接部分的剖面面积大小的偏差。其结果,在切断导线尾端时,能够使从瓷嘴的前端延伸出的导线尾端的形状稳定。
在本发明的半导体装置的制造方法中,导线尾端分离工序也可在薄壁部将导线尾端从压接球分离时,使瓷嘴朝向第二接合点的方向向斜上方移动。
由此,可抑制切断的导线尾端与压接球接触而再次接合,而可提高打线接合的稳定性。
在本发明的半导体装置的制造方法中,导线尾端接合工序中,可在将导线尾端的侧面接合到压接球上时,使瓷嘴的第一接合点侧的面部移动到压接球的与第二接合点相反一侧的端部上方之后,使瓷嘴下降而利用瓷嘴的面部将弯曲变形的导线尾端的侧面接合在压接球的与第二接合点相反一侧的端部上。
由此,可将导线尾端的侧面确实地接合在压接球上。
本发明的打线接合装置是利用导线将第一接合点与第二接合点之间连接的打线接合装置,其特征在于包括:瓷嘴,供导线插通;移动机构,使瓷嘴移动;以及控制部,控制移动机构的驱动,且控制部是在插通于瓷嘴的导线的前端形成无空气球后,使瓷嘴的前端下降到压接高度,使无空气球与第一接合点接合而形成压接球与压接球上侧的球颈,且使瓷嘴的前端在水平方向上移动,在球颈与压接球之间形成减小了剖面面积的薄壁部,在使瓷嘴上升而抽出导线尾端后,使瓷嘴向第二接合点的方向移动,在薄壁部将导线尾端与压接球分离,
且使瓷嘴下降而将已分离的导线尾端的侧面接合在压接球上。
在本发明的打线接合装置中,可为:控制部是在形成球颈后,使瓷嘴上升到比压接高度高的剪切高度,并使瓷嘴在水平方向上往复移动而形成薄壁部,在形成薄壁部之后,使瓷嘴向第二接合点的方向呈圆弧状地往复移动,使导线弯曲变形,且在薄壁部将导线尾端从压接球分离时,使瓷嘴朝向第二接合点的方向向斜上方移动,当将导线尾端的侧面接合在压接球上时,使瓷嘴的第一接合点侧的面部移动到压接球的与第二接合点相反一侧的端部上方之后,使瓷嘴下降而利用瓷嘴的面部将弯曲变形的导线尾端的侧面接合在压接球的与第二接合点相反一侧的端部上。
发明的效果
本发明可提供一种能够形成环形状自由度大的低环形导线的打线接合装置。
附图说明
图1是表示实施方式的打线接合装置的结构的立面图。
图2是安装在实施方式的打线接合装置的瓷嘴的剖面图。
图3是表示利用实施方式的打线接合装置形成的环形导线的立面图。
图4是表示瓷嘴的前端的移动的说明图。
图5是表示使用实施方式的打线接合装置进行打线接合时的球形接合工序的说明图。
图6A是表示在使用实施方式的打线接合装置进行打线接合时的薄壁部形成工序中使瓷嘴略微上升的状态的说明图。
图6B是表示在薄壁部形成工序中,从图6A所示的状态使瓷嘴朝向正向方向水平移动的状态的说明图。
图6C是表示在薄壁部形成工序中,从图6B所示的状态使瓷嘴朝向反向方向水平移动的状态的说明图。
图6D是表示在薄壁部形成工序中,从图6C所示的状态使瓷嘴再次朝向正向方向水平移动少许的状态的说明图。
图7A是表示在使用实施方式的打线接合装置进行打线接合时的导线尾端弯曲工序中,使瓷嘴上升而使导线尾端延伸出的状态的说明图。
图7B是表示在导线尾端弯曲工序中,从图7A所示的状态使瓷嘴朝向第二接合点呈圆弧状地移动的状态的说明图。
图7C是表示在导线尾端弯曲工序中,从图7B所示的状态使瓷嘴的前端朝向第一接合点的方向呈圆弧状地移动的状态的说明图。
图8是表示使用实施方式的打线接合装置进行打线接合时的导线尾端分离工序的说明图。
图9A是表示在使用实施方式的打线接合装置进行打线接合时的导线尾端接合工序中使瓷嘴移动到压接球上方的状态的说明图。
图9B是表示在导线尾端接合工序中,从图9A所示的状态使瓷嘴下降而将导线尾端的侧面接合在压接球上的状态的说明图。
图10是表示使用实施方式的打线接合装置将环形导线针脚式接合(stitchbonding)在第二接合点的状态下的第一接合部与环形导线的说明图。瓷嘴
具体实施方式
以下,参照附图对实施方式的打线接合装置100进行说明。如图1所示那样,实施方式的打线接合装置100包括:基座10、XY平台11、接合头12、Z方向马达13、接合臂14、超声波喇叭15、瓷嘴20、夹持器17、放电电极18、接合载台19、及控制部60。再者,在以下的说明中,将接合臂14或超声波喇叭15的延伸方向作为X方向,将在水平面上与X方向成直角的方向作为Y方向,将上下方向作为Z方向进行说明。
XY平台11安装在基座10上,使搭载在上侧的部件沿XY方向移动。
接合头12安装在XY平台11上并通过XY平台11向XY方向移动。在接合头12中收纳有Z方向马达13、及由Z方向马达13驱动的接合臂14。Z方向马达13具有定子13b。接合臂14为根部14a与Z方向马达13的定子13b相向,并绕Z方向马达13的轴13a旋转自如地安装的转子。
在接合臂14的X方向的前端安装有超声波喇叭15,在超声波喇叭15的前端安装有瓷嘴20。超声波喇叭15通过未图示的超声波振子的振动对安装于前端的瓷嘴20进行超声波励振。瓷嘴20如后面参照图2说明的那样,在内部设置有沿上下方向贯通的贯通孔21,在贯通孔21中插通有导线16。
另外,在超声波喇叭15的前端的上侧设有夹持器17。夹持器17开闭而进行导线16的握持、放开。
在接合载台19的上侧设置有放电电极18。放电电极18也可安装在设置于基座10上的未图示的框架上。放电电极18在与插通瓷嘴20并从瓷嘴20的前端25延伸出的导线16之间进行放电,使导线16熔融而形成无空气球40。
接合载台19吸附固定在上表面安装有半导体芯片34的基板30,同时利用未图示的加热器加热基板30与半导体芯片34。
构成转子的接合臂14的根部14a利用接合头12的Z方向马达13的定子13b的电磁力如图1中的箭头71所示那样旋转时,安装在超声波喇叭15前端的瓷嘴20如箭头72所示那样向Z方向移动。另外,接合载台19通过XY平台11而在XY方向上移动。因此,瓷嘴20通过XY平台11及Z方向马达13而在XYZ方向上移动。因此,XY平台11与Z方向马达13构成使瓷嘴20在XYZ方向上移动的移动机构11a。
XY平台11、Z方向马达13、夹持器17、放电电极18、及接合载台19连接于控制部60,基于控制部60的指令而驱动。控制部60利用包括XY平台11及Z方向马达13的移动机构11a,调整瓷嘴20的XYZ方向的位置,并且控制夹持器17的开闭、放电电极18的驱动、接合载台19的加热。
控制部60是包括作为在内部进行信息处理的处理器的中央处理器(centralprocessing unit,CPU)61、存储动作程序或动作数据等的存储器62的计算机。
接着,参照图2说明瓷嘴20的结构。图2是表示瓷嘴20的前端部的一例的图。在瓷嘴20形成有沿中心线24的方向贯通的贯通孔21。在此贯通孔21中插通导线16。因此,贯通孔21的内径d1比导线16的外径d2大(d1>d2)。贯通孔21的下端呈圆锥状扩展。所述呈圆锥状扩展的锥形部被称为倒角部22。另外,此圆锥状的空间中最大的直径(即最下端的直径)被称为倒角直径d3。
瓷嘴20的下端面成为按压图1所示的无空气球40的面部23。此面部23可以是平坦的水平面,也可以是随着接近外侧而向上方前进的倾斜面。将面部23的宽度、即,倒角部22与瓷嘴20的下端的外周的距离称为“面部宽度W”。面部宽度W通过倒角直径d3与瓷嘴20的外周直径d4,以W=(d4-d3)/2计算。另外,在以下的说明中,将瓷嘴20的下端的中心线24上的点称为瓷嘴20的前端25。
如图2中点划线所示那样,将瓷嘴20的前端25加工到高度h1的点a而将图1所示的无空气球40按压在焊盘35上时,无空气球40被面部23按压扁平化而形成直径d5且厚度hb的扁平圆柱状的压接球41。另外,形成无空气球40的金属的一部分从倒角部22进入贯通孔21而形成球颈42,此球颈42包括与压接球41的上侧连接的圆锥状部42a、及与圆锥状部42a的上侧连接的圆柱状部42b。
图3是利用打线接合装置100形成的环形导线52的示意图。在半导体芯片34上配设有多个焊盘35,在基板30上设置有多个引线31。打线接合装置100利用环形导线52将位于此焊盘35上的第一接合点P1与位于引线31上的第二接合点P2连接。
在第一接合点P1形成将导线16的一端按压于焊盘35而形成的第一接合部50,从所述第一接合部50引出的环形导线52延伸到第二接合点P2。在第二接合点P2形成有将环形导线52的另一端按压于引线31而形成的第二接合部51。此处,第二接合部51通常是将环形导线52推压在引线31上而压扁的针脚接合。
以下,参照图4~图9B对打线接合装置100的形成第一接合部50、环形导线52、及第二接合部51的动作进行说明。在以下的说明中,将从第一接合点P1观察而接近第二接合点P2的方向称为“正向”,将远离第二接合点P2的方向、或者从第一接合点P1观察而与第二接合点P2相反的方向称为“反向”。各图中所示的“F”符号表示正向方向,“R”符号表示反向方向。另外,图4所示的箭头81~箭头91对应于图5~图9B中所示的箭头81~箭头91。
在形成第一接合部50的情况下,控制部60的处理器即CPU 61首先开放夹持器17,驱动控制XY平台11及Z方向马达13,使瓷嘴20的前端25移动至放电电极18的附近。然后,CPU61使放电电极18与从瓷嘴20的前端25延伸出的导线16之间发生放电,将从瓷嘴20的前端25延伸出的导线16成形为无空气球40。
继而,CPU 61如图5所示那样执行球形接合工序。如图4所示那样,CPU61使瓷嘴20的中心线24的XY坐标与第一接合点P1的中心线36的XY坐标一致,如图4、图5所示的箭头81那样,使瓷嘴20的前端25朝向第一接合点P1下降到点a。此时,从焊盘35的上表面至瓷嘴20的前端25的高度h1、即,从焊盘35的上表面至点a的高度h1基于压接球41的厚度hb(参照图2)的目标值决定。以下,将此高度h1称为“压接高度h1”。
然后,如图5所示那样,利用瓷嘴20的面部23将无空气球40按压在焊盘35上。此时,也可经由超声波喇叭15对瓷嘴20的前端25赋予超声波振动。
瓷嘴20将无空气球40按压在焊盘35上时,如之前参照图2说明的那样,面部23与倒角部22将无空气球40成形为压接球41及球颈42。当形成压接球41及球颈42后,CPU 61结束球形接合工序。
接着,CPU 61如图6A~图6D所示那样执行薄壁部形成工序。CPU 61预先打开夹持器17。然后,如图6A所示那样,CPU 61驱动Z方向马达13,使瓷嘴20的前端25如图4、图6A中所示的箭头82那样,仅上升高度Δhb至点b,使瓷嘴20的前端25的高度成为高度h2。以下,将高度h2称为“剪切高度h2”。剪切高度h2是压接球41的上端面与球颈42的上端面之间的高度,且是瓷嘴20的前端25位于球颈42的侧面的高度。
接着,如图6B所示,CPU 61在将瓷嘴20的前端25的高度保持在剪切高度h2的状态下,驱动XY平台11,如图4、图6B所示的箭头83那样,使瓷嘴20在朝向第二接合点P2的正向方向上水平移动距离Δxc至点c。由此,瓷嘴20的中心线24位于比第一接合点P1的中心线36更靠近第二接合点P2的位置。
接着,如图6C所示那样,CPU 61在将瓷嘴20的前端25的高度保持在剪切高度h2的状态下,与图6B相反,驱动XY平台11,如图4、图6C所示的箭头84那样,使瓷嘴20沿着从第二接合点P2朝向第一接合点P1的反向方向水平移动距离Δxd至点d。由于Δxd大于图6B所示的Δxc,所以如图6C所示那样,瓷嘴20的中心线24位于比第一接合点P1更靠近反向侧。
进而,CPU 61在将瓷嘴20的前端25的高度保持在剪切高度h2的状态下,驱动XY平台11,如图4、图6B所示的箭头85那样,使瓷嘴20沿着朝向第二接合点P2的正向方向水平移动距离Δxe至点e。由于Δxe比图6C所示的Δxd小,所以如图6D所示那样,瓷嘴20的中心线24位于比第一接合点P1更靠反向侧、且穿过压接球41的与第二接合点P2相反的一侧(反向侧)的端部45的位置。
如图6B至图6D所示那样,将瓷嘴20的前端25的高度保持在剪切高度h2,使瓷嘴20的前端25在水平方向上朝向正向侧及反向侧往复移动时,如图6C、图6D所示那样,球颈42的一部分在剪切高度h2处被瓷嘴20的前端25剪切断裂而在水平方向上削掉。由此,形成正向侧的剪切面44及反向侧的剪切面43。此处,正向侧的剪切面44出现在压接球41的上端面附近。另外,正向侧的剪切面43出现在球颈42的下端面附近。在剪切面43和压接球41的与第二接合点P2相反的一侧(反向侧)的端部45的上表面之间,空有微小的间隙。在正向侧的剪切面44与反向侧的剪切面43之间,形成连接球颈42与压接球41之间的细的连接部46。连接部46是剖面面积比导线16减少的薄壁部。
如此,使瓷嘴20的前端25在水平方向上朝向正向侧及反向侧往复移动,形成剪切面43、剪切面44及连接部46时,可极力减小连接部46的剖面面积,并且可抑制连接部46的剖面面积大小的偏差。
接着,如图7A~图7C所示那样,CPU 61执行导线尾端弯曲工序。CPU61如图7A所示那样驱动Z方向马达13,使瓷嘴20的前端25如图4、图7A中所示的箭头86那样上升到点f,使瓷嘴20的前端25的高度成为高度h3。以下,高度h3称为“移动高度h3”。移动高度h3比剪切高度h2高。此时,球颈42与压接球41之间通过连接部46连接,夹持器17打开,因此瓷嘴20上升后,导线尾端47从瓷嘴20的前端25抽出。
使瓷嘴20的前端25上升到移动高度h3后,CPU 61使瓷嘴20的前端25如图4、图7B中所示的箭头87那样从点f呈圆弧状地移动到点g。圆弧状的移动也可沿着以图7A所示的点e为中心、以点f与点e的距离为半径的圆弧而移动到高度h4的点g。由此,导线尾端47从连接部46向正向侧弯曲而下侧的侧面朝向压接球41的上端面弯曲。
接着,与图7B相反,CPU 61使瓷嘴20的前端25如图4、图7C中所示的箭头88那样从点g圆弧状地移动到点f,使瓷嘴20的前端25的位置返回到至f。由此,导线尾端47在从连接部46朝向正向侧弯曲后,成为向反向侧弯曲的形状。
接着,如图8所示那样,CPU 61执行导线尾端分离工序。如图4、图8所示那样,CPU61关闭夹持器17,驱动XY平台11及Z方向马达13,使瓷嘴20的前端25朝向第二接合点P2的方向向斜上方移动至高度h5的点h。通过此移动,从瓷嘴20的前端25延伸出的导线尾端47以从连接部46朝向第二接合点P2的方向向斜上方延伸的方式变形。另外,移动时,由于CPU 61关闭夹持器17,因此通过移动,连接部46被瓷嘴20及夹持器17朝向第二接合点P2的方向而向斜上方拉伸。由此,如图8所示那样,连接部46断裂,形成压接球侧断裂面48及导线尾端侧断裂面49。在连接部46断裂时,如图8所示那样,导线尾端47从瓷嘴20的前端25朝向第一接合点P1朝着反向侧而向斜下方延伸,并绕到瓷嘴20的反向侧的面部23的下侧。
接着,CPU 61如图9A、图9B所示那样执行导线尾端接合工序。如图4的箭头90所示那样,CPU 61驱动XY平台11及Z方向马达13,使瓷嘴20的前端25从点h上升到点i后,从点i朝向反向方向移动。然后,如图9A所示那样,使瓷嘴20的前端25的位置移动到高度h6的点j,以使瓷嘴20的第一接合点侧(反向侧)的面部23位于压接球41的反向侧的端部45的上方。
接着,CPU 61如图4、图9B所示的箭头91那样,使瓷嘴20的反向侧的面部23朝向压接球41的反向侧的端部45下降至点k。然后,如图9B所示那样,利用瓷嘴20的反向侧的面部23将从瓷嘴20的前端25朝向反向侧而向斜下方延伸的导线尾端47的侧面按压在压接球41的反向侧的端部45上。由此,导线尾端47接合在端部45上,形成第一接合部50。此时,从焊盘35的上表面到瓷嘴20的前端25的高度h7、即,从焊盘35的上表面到点k的高度h7基于第一接合部50的厚度的目标值决定。
如图9B所示那样,第一接合部50接合在压接球41的反向侧的端部45上,第二接合点P2的一侧沿着压接球41上的剪切面44在水平方向上朝向第二接合点P2延伸。
接着,CPU 61执行针脚接合工序。CPU 61打开夹持器17,如图4所示的箭头92那样,使瓷嘴20上升,使环形导线52从瓷嘴20的前端25延伸出后,如图4所示的点划线的箭头93所示那样,使瓷嘴20的前端25环形化,而使瓷嘴20的中心线24的位置对准第二接合点P2的中心线37(参照图3)的位置。然后,将瓷嘴20的前端25按压在基板30的引线31上,而将环形导线52的侧面针脚接合在引线31上,形成第二接合部51。
由此,如图3、图10所示那样,环形导线52成为从接合在压接球41的反向侧的端部45上的第一接合部50越过压接球41的剪切面44之上而朝向第二接合点P2在水平方向上延伸的形状。
再者,在图4中,简化记载了瓷嘴20的前端25的环形化的轨迹,但根据要形成的环形导线52的形状,也可以设为各种路径。
然后,CPU 61关闭夹持器17,使瓷嘴20上升,切断导线16。如此,打线接合装置100通过第一接合部50、环形导线52、及第二接合部51连接如图3所示的第一接合点P1、及第二接合点P2。
如以上所说明那样,实施方式的打线接合装置100通过薄壁部形成工序而减小球颈42与压接球41的连接部46的剖面面积后,使导线尾端47弯曲变形,使瓷嘴20朝向第二接合点P2移动而将导线尾端47从压接球41切断,所以可保持切断的导线尾端47进入瓷嘴20的反向侧的面部23的下侧的状态。因此,在使导线尾端47的侧面接合在压接球41上而形成第一接合部50时,第一接合部50的第二接合点侧可沿着压接球41之上在水平方向上朝向第二接合点P2延伸。因此,如图3、图10所示那样,可将环形导线52形成为从压接球41上水平地朝向第二接合点P2,而能够降低环形导线52的高度。
另外,如专利文献2所记载的现有技术那样,即使不将导线尾端47的侧面多次按压在压接球41上,也可使第一接合部50的第二接合点侧沿着压接球41之上在水平方向上朝向第二接合点P2延伸。因此,能够使第一接合部50与环形导线52的连接部分的剖面面积比现有技术大,所以在针脚接合工序中,能够使瓷嘴20的前端25自由地移动,能够增大环形导线52的形状的自由度。
另外,在实施方式的打线接合装置100中,在薄壁部形成工序中,使瓷嘴20的前端25在水平方向上朝向正向侧及反向侧往复移动而极力减小连接部46的剖面面积,并且抑制连接部46的剖面面积大小的偏差。因此,在导线尾端分离工序中,导线尾端47与连接部46的断裂载荷小且恒定,因此在连接部46断裂时进入瓷嘴20的反向侧的面部23的下侧的导线尾端47的形状为无偏差、稳定的形状。由此,形成在压接球41的反向侧的端部45上的第一接合部50的形状恒定,能够进行稳定的打线接合。
进而,在实施方式的打线接合装置100中,在导线尾端分离工序中,使瓷嘴20的前端25朝向第二接合点P2的方向向斜上方移动,因此可抑制切断的导线尾端47与压接球41接触而再次接合,可提高打线接合的稳定性。
再者,也可通过进一步减小连接部46的剖面面积,进一步减小导线尾端47与连接部46的断裂载荷,通过使瓷嘴20在水平方向上移动,进行导线尾端47的切断。
符号的说明
10:底座
11:XY平台
11a:移动机构
12:接合头
13:Z方向马达
13a:轴
13b:定子
14:接合臂
14a:根部
15:超声波喇叭
16:导线
17:夹持器
18:放电电极
19:接合载台
20:瓷嘴
21:贯通孔
22:倒角部
23:面部
24、36、37:中心线
25:前端
30:基板
31:引线
34:半导体芯片
35:焊盘
40:无空气球
41:压接球
42:球颈
42a:圆锥状部
42b:圆柱状部
43、44:剪切面
45:端部
46:连接部
47:导线尾端
48:压接球侧断裂面
49:导线尾端侧断裂面
52:环形导线
60:控制部
61:CPU
62:存储器
100:打线接合装置
Claims (8)
1.一种半导体装置的制造方法,是利用导线将第一接合点与第二接合点之间连接的半导体装置的制造方法,且其特征在于包括:
准备工序,准备打线接合装置,所述打线接合装置包括供所述导线插通的瓷嘴、及使所述瓷嘴移动的移动机构;
球形接合工序,在插通于所述瓷嘴的所述导线的前端形成无空气球后,使所述瓷嘴的前端下降至压接高度,将所述无空气球与所述第一接合点接合而形成压接球与所述压接球上侧的球颈;
薄壁部形成工序,使所述瓷嘴的前端在水平方向上移动,在所述球颈与所述压接球之间形成减小了剖面面积的薄壁部;
导线尾端分离工序,使所述瓷嘴上升而抽出导线尾端后,使所述瓷嘴向所述第二接合点的方向移动,在所述薄壁部将所述导线尾端与所述压接球分离;以及
导线尾端接合工序,使所述瓷嘴下降而将已分离的所述导线尾端的侧面接合在所述压接球上。
2.根据权利要求1所述的半导体装置的制造方法,其特征在于包括:
导线尾端弯曲工序,在形成所述薄壁部之后,使所述瓷嘴向所述第二接合点的方向呈圆弧状地往复移动而使所述导线弯曲变形。
3.根据权利要求1或2所述的半导体装置的制造方法,其特征在于,
所述薄壁部形成工序中,使所述瓷嘴上升到比所述压接高度高的剪切高度并使所述瓷嘴在水平方向上移动。
4.根据权利要求1至3中任一项所述的半导体装置的制造方法,其特征在于,
所述薄壁部形成工序中,在形成所述薄壁部时使所述瓷嘴在水平方向上往复动作。
5.根据权利要求1至4中任一项所述的半导体装置的制造方法,其特征在于,
所述导线尾端分离工序中,当在所述薄壁部将所述导线尾端从所述压接球分离时,
使所述瓷嘴朝向所述第二接合点的方向而向斜上方移动。
6.根据权利要求1至5中任一项所述的半导体装置的制造方法,其特征在于,
所述导线尾端接合工序中,当将所述导线尾端的侧面接合在所述压接球上时,使所述瓷嘴的所述第一接合点侧的面部移动到所述压接球的与所述第二接合点相反一侧的端部上方之后,使所述瓷嘴下降,利用所述瓷嘴的所述面部将已弯曲变形的所述导线尾端的侧面接合在所述压接球的与所述第二接合点相反一侧的所述端部上。
7.一种打线接合装置,利用导线将第一接合点与第二接合点之间连接,且所述打线接合装置的特征在于包括:
瓷嘴,供所述导线插通;
移动机构,使所述瓷嘴移动;以及
控制部,控制所述移动机构的驱动,且
所述控制部是
在插通于所述瓷嘴的所述导线的前端形成无空气球后,使所述瓷嘴的前端下降到压接高度,将所述无空气球与所述第一接合点接合而形成压接球与所述压接球上侧的球颈,
使所述瓷嘴的前端在水平方向上移动,在所述球颈与所述压接球之间形成减小了剖面面积的薄壁部,
在使所述瓷嘴上升而抽出导线尾端后,使所述瓷嘴向所述第二接合点的方向移动,在所述薄壁部将所述导线尾端与所述压接球分离,
使所述瓷嘴下降而将已分离的所述导线尾端的侧面接合在所述压接球上。
8.根据权利要求7所述的打线接合装置,其特征在于,
所述控制部是
在形成所述球颈后,使所述瓷嘴上升到比所述压接高度高的剪切高度,使所述瓷嘴在水平方向上往复移动而形成所述薄壁部,
在形成所述薄壁部之后,使所述瓷嘴向所述第二接合点的方向呈圆弧状地往复移动而使所述导线弯曲变形,
在所述薄壁部将所述导线尾端从所述压接球分离时,使所述瓷嘴朝向所述第二接合点的方向向斜上方移动,
当将所述导线尾端的侧面接合在所述压接球上时,使所述瓷嘴的所述第一接合点侧的面部移动到所述压接球的与所述第二接合点相反一侧的端部上方之后,使所述瓷嘴下降而利用所述瓷嘴的所述面部将弯曲变形的所述导线尾端的侧面接合在所述压接球的与所述第二接合点相反一侧的所述端部上。
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