US20060138405A1 - Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display - Google Patents

Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display Download PDF

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US20060138405A1
US20060138405A1 US11/298,211 US29821105A US2006138405A1 US 20060138405 A1 US20060138405 A1 US 20060138405A1 US 29821105 A US29821105 A US 29821105A US 2006138405 A1 US2006138405 A1 US 2006138405A1
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derivatives
semiconductor layer
organic semiconductor
thin film
region
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Nam-Choul Yang
Hye-dong Kim
Min-chul Suh
Jae-Bon Koo
Sang-min Lee
Hun-Jung Lee
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Samsung Display Co Ltd
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Samsung SDI Co Ltd
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Assigned to SAMSUNG SDI CO., LTD. reassignment SAMSUNG SDI CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, HYE-DONG, KOO, JAE-BON, LEE, HUN-JUNG, LEE, SANG-MIN, SUH, MIN-CHUL, YANG, NAM-CHOUL
Publication of US20060138405A1 publication Critical patent/US20060138405A1/en
Assigned to SAMSUNG MOBILE DISPLAY CO., LTD. reassignment SAMSUNG MOBILE DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG SDI CO., LTD.
Priority to US12/641,277 priority Critical patent/US8043887B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Definitions

  • the present embodiments relate to a thin film transistor (TFT), a flat panel display having the TFT and a method for manufacturing the TFT and the flat panel display; and more particularly, to a thin film transistor (TFT) having a transformed region in an organic semiconductor layer that provides the same result as patterning the organic semiconductor layer, a flat panel display having the TFT and a method for manufacturing the TFT and the flat panel display.
  • TFT thin film transistor
  • TFT thin film transistor
  • a thin film transistor has been used in a flat panel display as a switching element for controlling operations of each pixel or as a driving element for operating a pixel.
  • the TFT includes a liquid crystal display element, an organic electroluminescent display element and an inorganic light emitting display element.
  • the TFT includes an active layer having a source region and a drain region which are doped with a high concentration of impurity and a channel region formed between the source region and the drain region.
  • the TFT also includes a gate electrode formed on a predetermined region of a substrate where the channel region is faced and the gate electrode is insulated from the active layer.
  • the TFT further includes a source electrode coupled to the source region and a drain electrode, each coupled to the drain region.
  • the flat panel display has become thinner and has been required to have flexibility.
  • a plastic substrate has been used as a substrate of the flat panel display instead of a glass substrate.
  • a high temperature thermal process cannot be performed in manufacturing the flat panel display. Accordingly, there are difficulties in using a conventional polysilicon thin film transistor for manufacturing the flat panel display.
  • the organic semiconductor can be formed in a low temperature thermal process for manufacturing a thin film transistor (TFT) which is relatively inexpensive.
  • a photo lithographing method cannot be used for patterning the organic semiconductor layer.
  • the pattern is formed on the organic semiconductor forming an active channel. If a combination method of a wet type and a dry type of etching methods is used for forming the pattern on the organic semiconductor, the organic semiconductor is damaged.
  • One embodiment relates to a thin film transistor, comprising:
  • the crystal size of the transformed region is smaller than the crystal size of the other regions.
  • the transformed region has lower current mobility than the other regions.
  • the transformed region is formed by emitting light on a predetermined region where the transformed region is formed.
  • the transformed region is formed by performing a thermal process on a predetermined region where the transformed region is formed.
  • the transformed region comprises a boundary having a closed curve shape surrounding at least the channel region.
  • the transformed region comprises a boundary formed on at least one pair of substantially parallel lines where at least the channel region is located between the substantially parallel lines.
  • the transformed region comprises a boundary substantially parallel to a line connecting the source region, the channel region and the drain region.
  • an insulation layer is formed covering the gate electrode, and the organic semiconductor layer is formed on the insulation layer.
  • Another embodiment relates to an insulation layer covering the gate electrode; wherein, the source electrode and drain electrode are each formed on the insulation layer;
  • the source electrode and drain electrode are each formed on a substrate and the organic semiconductor layer is formed on the substrate so as to cover the source electrode and drain electrode.
  • the organic semiconductor layer is formed on a substrate, and the source electrode and the drain electrode are each formed on the organic semiconductor layer.
  • the organic semiconductor layer comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including metal and its derivates, phthalocyanine not including metal and its derivates, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromellitic dianhydride and its derivatives, pyromellitic diimide and its derivatives, p
  • Another embodiment relates to a flat panel display, comprising:
  • the crystal size of the transformed region is smaller than a crystal size of the other regions.
  • the transformed region has lower current mobility than the other regions.
  • the transformed region is formed by irradiating a predetermined region with light where the transformed region is formed.
  • the transformed region is formed by performing a thermal process on a predetermined region where the transformed region is to be formed.
  • the transformed region comprises a boundary having a closed curve shape surrounding at least the channel region.
  • the transformed region comprises a boundary formed on at least one pair of substantially parallel lines wherein at least the channel region is located between the substantially parallel lines.
  • the transformed region comprises a boundary substantially parallel to a line connecting to the source region, the channel region and the drain region.
  • an insulation layer is formed for covering the gate electrode and the organic semiconductor layer is formed on the insulation layer.
  • Another embodiment relates to an insulation layer covering the gate electrode; wherein, the source electrode and drain electrode are each formed on the insulation layer;
  • the source electrode and drain electrode are each formed on a substrate and the organic semiconductor layer is formed on the substrate so as to cover the source electrode and drain electrode.
  • the organic semiconductor layer is formed on a substrate, and the source electrode and the drain electrode are each formed on the organic semiconductor layer.
  • the organic semiconductor layer comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including metal and its derivates, phthalocyanine not including a metal and its derivates, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromellitic dianhydride and its derivatives, pyromellitic diimide and
  • Another embodiment relates to a method of manufacturing a thin film transistor comprising a gate electrode, a source electrode and a drain electrode, each insulated from the gate electrode; and an organic semiconductor layer insulated from the gate electrode and coupled to the source and the drain electrodes,
  • the organic semiconductor layer is irradiated by a laser.
  • the organic semiconductor layer is irradiated with ultraviolet light.
  • the organic semiconductor layer comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including a metal and its derivates, phthalocyanine not including a metal and its derivates, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromellitic dianhydride and its derivatives, pyromellitic diimi
  • Another embodiment relates to a method of manufacturing a thin film transistor comprising a gate electrode; a source electrode and a drain electrode, each insulated from the gate electrode; and an organic semiconductor layer insulated from the gate electrode and coupled to the source and drain electrodes,
  • the organic semiconductor layer comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including a metal and its derivates, phthalocyanine not including a metal or not and its derivates, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromellitic dianhydride and its derivatives, pyromellitic di
  • Another embodiment relates to a method of manufacturing a flat panel display, comprising:
  • the organic semiconductor layer is irradiated with a laser.
  • the organic semiconductor layer is irradiated with ultraviolet light.
  • the organic semiconductor layer comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including a metal and its derivates, phthalocyanine not including metal and its derivates, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromellitic dianhydride and its derivatives, pyromellitic diimide and
  • Another embodiment relates to a method of manufacturing a flat panel display, comprising:
  • the organic semiconductor layer comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including metal and its derivates, phthalocyanine not including metal and its derivates.
  • naphthalene tetracarboxylic diimide and its derivatives naphthalene tetracarboxylic diimide and its derivatives
  • naphthalene tetracarboxylic dianhydride and its derivatives naphthalene tetracarboxylic dianhydride and its derivatives
  • pyromellitic dianhydride and its derivatives pyromellitic diimide and its derivatives
  • conjugate polymer containing thiophene and its derivatives and polymer containing fluorene and its derivatives conjugate polymer containing thiophene and its derivatives and polymer containing fluorene and its derivatives.
  • FIG. 1 is a cross sectional view of a thin film transistor in accordance with one embodiment
  • FIG. 2 is a cross sectional view of the thin film transistor of FIG. 1 which shows a method for manufacturing the thin film transistor in accordance with an embodiment
  • FIG. 3 is a cross sectional view of the thin film transistor of FIG. 1 which shows a method for manufacturing the thin film transistor in accordance with another embodiment
  • FIGS. 4 through 17 are diagrams showing various patterns of transformed region
  • FIGS. 18 through 21 are cross sectional views of thin film transistors having various lamination structures in accordance with the present embodiments.
  • FIG. 22 is a cross sectional view of an organic light emitting display having a thin film transistor of FIG. 1 .
  • FIG. 1 is a cross sectional view of a thin film transistor (TFT) in accordance with one embodiment.
  • TFT thin film transistor
  • TFTs 10 and 10 ′ are formed on a substrate 11 .
  • a flexible substrate may be used as the substrate 11 . That is, a plastic substrate may be used as the substrate 11 .
  • the present embodiments are not limited to the use of a plastic substrate. Any flexible substrate can be used as the substrate 11 such as a predetermined thickness of flexible substrate made by a glass material or a metal material.
  • the TFTs 10 and 10 ′ are formed on the substrate 11 and they are adjacent. Also, TFTs 10 and 10 ′ have substantially identical structure. Hereinafter, the structure of TFT 10 is explained.
  • a gate electrode 12 having a predetermined pattern is formed on the substrate 11 and a gate insulation layer 13 is formed to cover the gate electrode 12 .
  • a source electrode and a drain electrode 14 are each formed on the gate insulation layer 13 . As shown in FIG. 1 , the source electrode and the drain electrode 14 may be formed to overlap with a predetermined part of the gate electrode 12 . However, the present embodiments are not limited to having the source electrode and the drain electrode 14 overlapping with the gate electrode 12 .
  • An organic semiconductor layer 15 is formed on the source electrode and the drain electrode 14 to cover the entire surface of the TFT 10 .
  • the organic semiconductor layer 15 includes a source and a drain region 15 b and a channel region 15 a connecting the source and the drain regions 15 b .
  • An n-type organic semiconductor or a p-type organic semiconductor may be used for the organic semiconductor layer 15 .
  • an n-type impurity or a p-type impurity may be doped on the source and the drain regions 15 b.
  • the organic semiconductor layer 15 is formed by using organic semiconductor material including, for example, pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivates, a oligonaphthalene and its derivatives, oligothiophene of alpha-5-thiophene and its derivatives, phthalocyanine including a metal (e.g.
  • phthalocyanine not including a metal e.g. Cu, Pt, etc
  • naphthalene tetracarboxylic diimide and its derivatives naphthalene tetracarboxylic dianhydride and its derivatives
  • pyromellitic dianhydride and its derivatives pyromellitic diimide and its derivatives
  • a conjugate polymer containing thiophene and its derivatives and a polymer containing fluorene and its derivatives.
  • the organic semiconductor layer 15 is entirely evaporated on the TFTs 10 and 10 ′ to cover the entire surface of the TFT 10 and TFT 10 ′. Therefore, if patterning of the organic semiconductor layer 15 is not performed, it may generate cross-talk between TFTs 10 and 10 ′.
  • a transformed region 15 c is formed between the TFTs 10 and 10 ′ in the present embodiments.
  • the transformed region 15 c is a predetermined region of the organic semiconductor layer 15 which is transformed to have a crystal structure different from other regions of the organic semiconductor layer 15 .
  • the transformed region 15 c is formed around at least the channel region 15 a .
  • the transformed region 15 c provides the same result as patterning the organic semiconductor layer 15 .
  • a predetermined region of the semiconductor layer 15 is decomposed, phase transited or photo-oxidized to form the transformed region 15 c . That is, by decomposing, phase transiting or photo-oxidizing, a crystal structure of the predetermined region becomes modified.
  • the predetermined region of the organic semiconductor layer 15 is irradiated with light to modify the crystal structure of the predetermined region of the organic semiconductor layer 15 as shown in FIGS. 2 and 3 .
  • FIG. 2 is a cross sectional view of a thin film transistor for demonstrating a method for forming a transformed region 15 c by irradiating a predetermined region of an organic semiconductor layer 15 with a laser
  • FIG. 3 is a cross sectional view of a thin film transistor for demonstrating a method forming a transformed region 15 c by exposing a predetermined region of an organic semiconductor layer 15 to ultraviolet (UV) rays.
  • UV ultraviolet
  • the crystal structure of the predetermined region is changed by the heat locally generated by the laser. That is, the heat generated by the laser decomposes, photo-oxidizes or phase-transits the crystal structure of the predetermined region to be different from other regions of the organic semiconductor layer 15 (e.g. having a smaller crystal size).
  • a mask 40 having a shielding portion 41 and an opening portion 42 is arranged above the TFTs 10 and 10 ′ within a predetermined space and the mask 40 is irradiated with light.
  • the opening portion 42 passes the radiated UV rays to the predetermined region of the organic semiconductor layer 15 and the shielding portion 41 blocks the UV rays irradiating the organic semiconductor layer 15 .
  • the predetermined region of the organic semiconductor layer 15 is exposed to the UV rays and the crystal structure of the predetermined region is changed by being decomposed, phase-transited or photo-oxidized.
  • the crystal structure of the predetermined region becomes different from crystal structures of other regions of the organic semiconductor layer 15 .
  • One characteristic of the transformed region 15 c formed by the above mentioned methods becomes different from the other regions of the organic semiconductor layer 15 . That is, the size of the crystal of the transformed layer 15 c becomes smaller compared to crystals of other regions.
  • the transformed region 15 c is formed on the organic semiconductor layer 15 for blocking crosstalk between TFTs 10 and 10 ′.
  • Degeneration of an organic material in the organic semiconductor layer 15 causes an increase in resistance. That is, when the size of the crystals of organic material in the organic semiconductor layer 15 becomes smaller, the resistance of the degenerated organic material increases. Accordingly, the degenerated organic material becomes an obstacle to transferring the carrier. Therefore, the degenerated organic material provides the same result as patterning the organic semiconductor layer to block carrier transferring between adjacent TFTs.
  • the method of Ficker is used for obtaining the same result as patterning the organic semiconductor layer 15 . That is, the laser is locally directed to a predetermined region of the organic semiconductor layer 15 for forming the transformed layer 15 c .
  • the transformed layer 15 c blocks carrier transfer between adjacent TFTs.
  • the transformed layer 15 c provides the same result as patterning the organic semiconductor layer 15 .
  • the transformed layer 15 c can be formed by various other methods in addition to the method of Ficker supra.
  • the transformed region 15 c may be formed by locally performing a thermal process on a predetermined region of the organic semiconductor layer. That is, if a region corresponding to the transformed layer 15 c of the organic semiconductor layer 15 is locally thermal processed, the region of the organic semiconductor layer 15 is transformed so that the transformed region 15 c is has degraded characteristics, that is it has lowered carrier mobility.
  • the local thermal process may be performed by irradiating light, such as UV rays, to a predetermined region of the organic semiconductor layer 15 .
  • light such as UV rays
  • the present embodiments are not limited to irradiating the transformed layer 15 c with light for a thermal process.
  • the local thermal process can be performed by arranging a heating wire pattern under the substrate 11 for heating the predetermined region of the organic semiconductor layer 15 c.
  • the transformed region can be formed so that it results in various patterns.
  • FIGS. 4 through 17 show various patterns of a transformed region in accordance with the present embodiments.
  • 12 a represents a gate wire of a gate electrode 12 for transmitting a gate signal and data-wire 14 a is connected to one of a source/drain electrode 14 .
  • FIGS. 4 through 7 show a transformed region 15 c having a closed curve shape of a boundary around a channel region 15 a .
  • the closed curve shape of the boundary may be formed to have a predetermined thickness.
  • the transformed region 15 c is formed to have a closed curve shape of inner boundary for forming the transformed region 15 c on outside of the channel region 15 a as shown in FIGS. 5 and 7 .
  • the boundary of the transformed region 15 c may overlap a predetermined portion of the gate electrode 12 as shown in FIGS. 4 and 5 . Also, the boundary of the transformed region 15 c may be formed on the outside region of the gate electrode 12 as shown in FIGS. 6 and 7 . The boundary of the transformed region 15 c may be arranged at the inside of the gate wire 12 a as shown in FIGS. 4 and 5 and the boundary of the transformed region 15 c may be arranged outside of the gate wire 12 a as shown in FIGS. 6 and 7 .
  • boundaries of the transformed regions 15 c may be formed on a pair of substantially parallel lines and the channel region 15 a is located between the substantially parallel lines.
  • the transformed region 15 c may be formed to have a line shape with a predetermined thickness. Furthermore, the transformed region 15 c may be formed on an entire region which is outside the channel region 15 a and inside boundaries of two transformed regions 15 c are substantially parallel each other as shown in FIGS. 9, 11 , 13 and 15 .
  • a pair of the substantially parallel lines may be substantially parallel to the gate wire 12 a as shown in FIGS. 8 through 11 . Furthermore, a pair of the substantially parallel lines may be substantially parallel to one of the wires of the source/drain electrodes 14 as shown in FIGS. 12 through 15 .
  • the transformed region 15 c may be formed across the gate electrode 12 on the inside of the gate wire 12 a as shown in FIGS. 8 and 9 . Also, the transformed regions 15 c may be formed on outside of the gate wire 12 a and on outside of the gate electrode 12 as shown in FIGS. 10 and 11 .
  • the transformed region 12 may be formed to have an inside boundary across the source/drain electrode 14 as shown in FIGS. 12 and 13 and the transformed region 15 c is formed on the outside of the source/drain electrode 14 as shown in FIGS. 14 and 15 .
  • the transformed regions 15 c may be formed on two pairs of substantially parallel lines.
  • the channel region 15 a is located between the transformed regions 15 c formed on the two pairs of substantially parallel lines.
  • One of two pairs of substantially parallel lines may be substantially parallel to the gate wire 12 a and the other of two pairs is substantially parallel to one 14 a wires of source/drain electrodes 14 .
  • the transformed region 15 c may be formed across the gate electrode 12 and the source/drain electrode 14 .
  • the transformed region 15 c may be formed on outside of the gate electrode 12 and the source/drain electrode 14 as shown in FIG. 17 .
  • the transformed regions 15 c further includes a line substantially parallel to a line connecting the source/drain regions 15 b and the channel region 15 a . Accordingly, a width of the channel region 15 a can be verified, by the transformed region 15 c so as to be closer to the design width, or anticipated width.
  • the thin film transistor may have various lamination structures in addition to the lamination structure shown in FIG. 1 .
  • FIG. 18 is a diagram of a thin film transistor having a lamination structure in accordance with one embodiment.
  • the gate insulation layer 13 is formed on the substrate 11 and the organic semiconductor layer 15 is formed on the gate insulation layer 13 .
  • the source/drain electrodes 14 are formed on the organic semiconductor layer 15 .
  • the predetermined region of the organic semiconductor layer 15 is irradiated with light to form the transformed region 15 c before forming the source/drain electrodes on the organic semiconductor layer 15 .
  • FIG. 19 is a diagram of a thin film transistor having another lamination structure.
  • a passivation layer 17 is additionally formed on the organic semiconductor layer 15 .
  • the passivation layer 17 covers the source/drain electrodes 14 and 14 ′.
  • the passivation layer 17 includes opening units 17 a and 17 a ′.
  • the channel regions 15 a and 15 a ′ may be formed on the opening units 17 and 17 a′.
  • the inorganic material includes, for example, SiO 2 , SiNx, AL 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , BST ((Ba,Sr) TiO 3 ) and PZT ((Pb,Zr) TiO 3 ).
  • the organic material can include for example, a common polymer such as PMMA (polymethyl methacrylate), and PS (polystyrene), a polymer derivative having phenol group, an acrylic polymer, an imide polymer, an aryl-ether polymer, an amide polymer, a fluoric polymer, a p-xylene polymer, a vinyl alcoholic polymer or a blend of any of these.
  • a common polymer such as PMMA (polymethyl methacrylate), and PS (polystyrene)
  • a polymer derivative having phenol group an acrylic polymer, an imide polymer, an aryl-ether polymer, an amide polymer, a fluoric polymer, a p-xylene polymer, a vinyl alcoholic polymer or a blend of any of these.
  • inorganic-organic stacked layers can be used.
  • SAM process a conventional process for forming a Self-Assembled Monolayer
  • OTS Oxetadecyltrimethoxysilane
  • HMDS hexamethyldisilazane
  • FIG. 20 is a diagram of a thin film transistor (TFT) having a staggered structure in accordance with another embodiment.
  • TFT thin film transistor
  • the source/drain electrodes 14 and 14 ′ are formed on the substrate 11 and the organic semiconductor layer 15 is formed on the source/drain electrodes 14 and 14 ′.
  • the organic semiconductor layer 15 covers the source/drain electrodes 14 and 14 ′.
  • the gate insulation layer 13 is formed on the organic semiconductor layer 15 and the gate electrodes 12 and 12 ′ are formed where the channel regions 15 a and 15 a ′ are faced.
  • the transformed region 15 c is formed on a predetermined region between TFTs 10 and 10 ′ of the organic semiconductor layer 15 .
  • the source/drain electrodes 14 and 14 ′ may be formed after forming the organic semiconductor layer 15 on the substrate 11 as shown in FIG. 21 .
  • the light is radiated or the terminal process is performed after forming the organic semiconductor layer 15 on the substrate 11 and before forming the source/drain electrodes 14 and 14 ′.
  • the SAM process including OTS and HMD can be performed on an uppermost layer adjacent to the organic semiconductor layer 15 of the thin film transistors of FIGS. 20 and 21 . Also, the uppermost layer of the thin film transistors of FIGS. 20 and 21 can be coated with the fluoric polymer thin film or the common polymer thin film.
  • the above mentioned transformed region 15 c may be implemented on various structures of the thin film transistor.
  • TFT thin film transistors
  • LCD liquid crystal display
  • FIG. 22 is a diagram of an organic light emitting display having a thin film transistor in accordance with an embodiment.
  • FIG. 22 shows one of the subpixels included in the organic light emitting display.
  • the subpixel includes an organic light emitting diode (OLED) as a self emitting element, at least one of thin film transistors and an additional capacitor (not shown).
  • OLED organic light emitting diode
  • the organic light emitting display has various pixel patterns according to colors emitted from the organic light emitting diode (OLED).
  • the organic light emitting display includes pixels for red, green and blue.
  • each subpixel of red, green and blue colors includes a TFT and the OLED.
  • the TFT may be one of the TFTs described above. However, the present embodiments are not limited to the above mentioned TFTs.
  • the subpixel may have various structures of thin film transistors.
  • the thin film transistor (TFT) 20 is formed on an insulation substrate 21 .
  • the TFT 20 includes a gate electrode 22 having a predetermined pattern on a substrate 21 , a source/drain electrode 24 formed on the gate insulator layer 23 and an organic semiconductor layer 25 is formed on the source/drain electrodes 24 .
  • the organic semiconductor layer 25 includes a source/drain region 25 b , a channel region 25 a connecting the source/drain regions 25 b and a transformed region 25 c .
  • the transformed region 25 c is identical to the transformed region 15 c in FIGS. 1 through 21 and thus detailed explanation of the transformed region 25 c is omitted.
  • a passivation layer 28 is formed to cover the TFT 20 .
  • the passivation layer 28 may be formed as a single layer or a plurality of layers by using an organic material (for example PMMA (polymethyl methacrylate), PS (polystyrene), a polymer derivative having one or more phenol groups, an acrylic polymer, an imide polymer, an aryl-ether polymer, an amide polymer, a fluoric polymer, a p-xylene polymer, or a vinyl alcoholic polymer), an inorganic material (such as, for example, SiO 2 , SiN x , AL 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , BST or PST) or a blend of organic and inorganic materials.
  • an organic material for example PMMA (polymethyl methacrylate), PS (polystyrene), a polymer derivative having one or more phenol groups, an acrylic polymer, an im
  • a pixel electrode 31 is formed on the passivation layer 28 and a pixel definition layer 29 is formed on the pixel electrode 31 .
  • the pixel electrode 31 is one of the electrodes of the OLED 30 .
  • a predetermined opening unit 29 a is formed on the pixel definition layer 29 and then an organic emitting layer 32 of the OLED 30 is formed.
  • the OLED 30 displays predetermined image information by emitting red, green and blue colors according to flow of current.
  • the OLED 30 includes a pixel electrode 31 connected to one of the source/drain electrodes 24 of the TFT 20 , a counter electrode 33 formed for covering the entire pixel and an organic emission layer 32 .
  • the pixel electrode 34 and the counter electrode 33 are insulated by the organic emission layer 32 .
  • the pixel electrode 34 and the counter electrode 33 supply voltage of different polarities to the organic emission layer 32 for emitting light of colors.
  • a small molecule organic layer or a polymer organic layer may be used for the organic emission layer 32 .
  • the organic emission layer 32 may be formed as a single structure or a complex structure including a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electro transport layer (ETL) and an electron injection layer (EIL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electro transport layer
  • EIL electron injection layer
  • N, N′-Di (naphthalene-1-yl)-N, N′-diphenyl-benzidine (NPB) and tris-8-hydroxyquionoline aluminium (Alq3) can be used for the organic material.
  • the small molecule organic layer is formed by a vacuum evaporation method.
  • the organic emission layer 32 includes the HTL and EML.
  • PEDOT polyethylenedioxythiophene
  • a polymer organic material including poly-phenylenevinylene (PPV) or polyfluorene is used for the EML.
  • a screen printing or an ink-jet printing method can be used for forming the organic emission layer 32 .
  • the organic layer is not limited to being formed by the above mentioned method and materials. Various embodiments can be implemented to form the organic layer.
  • the pixel electrode 31 works as an anode electrode and the counter electrode 33 works as cathode electrode. However, the polarity of the pixel electrode 31 and the counter electrode 33 may be switched.
  • the present embodiments are not limited to have the above mentioned structure.
  • Various structures of organic electroluminescent displays may be utilized in the present embodiments.
  • a bottom alignment layer (not shown) is formed to cover the pixel electrode 31 for manufacturing a bottom substrate of the LCD.
  • the TFT of the present embodiments may each be equipped with one or more sub pixels as shown in FIG. 22 . Also, the TFT of the present embodiments may be equipped with a driver circuit (not shown) or other electric circuits which do not reproduce images.
  • a flexible plastic substrate is preferably used as the substrate 21 for the organic electro luminescent display.
  • the TFT is distinguished from an adjacent TFT by the transformed region in the present embodiments.
  • the transformed region having a different size of crystal is formed on the organic semiconductor layer between the TFTs. This gives the same result as patterning the organic semiconductor layer. Therefore, the complicated pattern process is not performed for manufacturing the TFT of the present embodiments.
  • a dry etching process or a wet etching process is not required for manufacturing the TFT of the present embodiments. Therefore, characteristic degradation of the active channel is minimized.
  • etching is not required, processing time of a TFT is reduced and the processing efficiency of the TFT is improved.
  • leakage current is minimized by isolating the channel region from the adjacent TFT.

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US20070241331A1 (en) * 2006-04-12 2007-10-18 Au Optronics Corp. Electroluminescent device and methods for fabricating the same
US20080099760A1 (en) * 2006-10-31 2008-05-01 Hitachi, Ltd. Picture element driving circuit of display panel and display device using the same
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EP1675196B1 (en) 2010-03-10
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JP4504877B2 (ja) 2010-07-14
DE602005019839D1 (de) 2010-04-22
CN1819299A (zh) 2006-08-16
CN1819299B (zh) 2013-01-30
JP2006179855A (ja) 2006-07-06
US20100099215A1 (en) 2010-04-22
KR100670255B1 (ko) 2007-01-16
EP1675196A1 (en) 2006-06-28

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