US20060006393A1 - Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices - Google Patents

Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices Download PDF

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Publication number
US20060006393A1
US20060006393A1 US10/884,930 US88493004A US2006006393A1 US 20060006393 A1 US20060006393 A1 US 20060006393A1 US 88493004 A US88493004 A US 88493004A US 2006006393 A1 US2006006393 A1 US 2006006393A1
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US
United States
Prior art keywords
silicon
nickel
silicon carbide
deposited film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/884,930
Other languages
English (en)
Inventor
Allan Ward
Jason Henning
Helmut Hagleitner
Keith Wieber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US10/884,930 priority Critical patent/US20060006393A1/en
Assigned to CREE, INC. reassignment CREE, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAGLEITNER, HELMUT, HENNING, JASON PATRICK, WARD, ALLAN, II, WIEBER, KEITH DENNIS
Priority to JP2007520398A priority patent/JP5437576B2/ja
Priority to CA2572959A priority patent/CA2572959C/en
Priority to KR1020077002840A priority patent/KR101144882B1/ko
Priority to AU2005270089A priority patent/AU2005270089A1/en
Priority to PCT/US2005/023487 priority patent/WO2006014346A2/en
Priority to EP05803665A priority patent/EP1774577A2/en
Priority to CNB2005800296902A priority patent/CN100517574C/zh
Priority to TW094122863A priority patent/TWI270936B/zh
Publication of US20060006393A1 publication Critical patent/US20060006393A1/en
Assigned to NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA reassignment NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA CONFIRMATORY LICENSE (SEE DOCUMENT FOR DETAILS). Assignors: CREE INCORPORATED
Priority to US12/020,731 priority patent/US7875545B2/en
Priority to AU2010200045A priority patent/AU2010200045A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Definitions

  • the '200 patent describes the use of a sacrificial silicon layer as the stoichiometric limiting element between a silicon carbide surface and the contact metal, followed by a relatively high temperature (900-1050° C.) anneal to produce ohmic character.

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  • Electrodes Of Semiconductors (AREA)
US10/884,930 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices Abandoned US20060006393A1 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
US10/884,930 US20060006393A1 (en) 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
CNB2005800296902A CN100517574C (zh) 2004-07-06 2005-06-30 用于SiC半导体器件的富硅的镍-硅化物欧姆接触
EP05803665A EP1774577A2 (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices
CA2572959A CA2572959C (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices
KR1020077002840A KR101144882B1 (ko) 2004-07-06 2005-06-30 실리콘 카바이드 반도체 장치를 위한 실리콘-리치니켈-실리사이드 오믹 접합
AU2005270089A AU2005270089A1 (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
PCT/US2005/023487 WO2006014346A2 (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices
JP2007520398A JP5437576B2 (ja) 2004-07-06 2005-06-30 Ｓｉｃ半導体デバイス用のシリコン・リッチのニッケル珪素化合物オーミック・コンタクト
TW094122863A TWI270936B (en) 2004-07-06 2005-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
US12/020,731 US7875545B2 (en) 2004-07-06 2008-01-28 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
AU2010200045A AU2010200045A1 (en) 2004-07-06 2010-01-06 Silicon-rich nickel-silicide phmic contacts for SiC semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/884,930 US20060006393A1 (en) 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/020,731 Division US7875545B2 (en) 2004-07-06 2008-01-28 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Publications (1)

Publication Number Publication Date
US20060006393A1 true US20060006393A1 (en) 2006-01-12

Family

ID=35519824

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/884,930 Abandoned US20060006393A1 (en) 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
US12/020,731 Expired - Lifetime US7875545B2 (en) 2004-07-06 2008-01-28 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/020,731 Expired - Lifetime US7875545B2 (en) 2004-07-06 2008-01-28 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Country Status (9)

Country Link
US (2) US20060006393A1 (cg-RX-API-DMAC7.html)
EP (1) EP1774577A2 (cg-RX-API-DMAC7.html)
JP (1) JP5437576B2 (cg-RX-API-DMAC7.html)
KR (1) KR101144882B1 (cg-RX-API-DMAC7.html)
CN (1) CN100517574C (cg-RX-API-DMAC7.html)
AU (2) AU2005270089A1 (cg-RX-API-DMAC7.html)
CA (1) CA2572959C (cg-RX-API-DMAC7.html)
TW (1) TWI270936B (cg-RX-API-DMAC7.html)
WO (1) WO2006014346A2 (cg-RX-API-DMAC7.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284261A1 (en) * 2005-06-21 2006-12-21 Saptharishi Sriram Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US20080108190A1 (en) * 2006-11-06 2008-05-08 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US20090242901A1 (en) * 2006-11-06 2009-10-01 General Electric Company SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
US20100102331A1 (en) * 2006-11-02 2010-04-29 Sumitomo Electric Industries, Ltd. Ohmic electrode for sic semiconductor, method of manufacturing ohmic electrode for sic semiconductor, semiconductor device, and method of manufacturing semiconductor device
CN102231363A (zh) * 2011-05-17 2011-11-02 中国电子科技集团公司第十三研究所 一种低比接触电阻、低粗糙度欧姆接触制作方法
EP2560194A4 (en) * 2010-04-14 2013-11-20 Sumitomo Electric Industries SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
US20160118258A1 (en) * 2012-12-18 2016-04-28 General Electric Company Systems and method for ohmic contacts in silicon carbide devices
GB2553849A (en) * 2016-09-19 2018-03-21 Anvil Semiconductors Ltd Method of reducing device contact resistance
CN110797260A (zh) * 2018-08-02 2020-02-14 半导体组件工业公司 用于碳化硅功率半导体器件上的背侧欧姆接触的碳受控欧姆接触层

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006050360B4 (de) 2006-10-25 2014-05-15 Infineon Technologies Austria Ag Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC
US9214352B2 (en) 2010-02-11 2015-12-15 Cree, Inc. Ohmic contact to semiconductor device
US8563372B2 (en) * 2010-02-11 2013-10-22 Cree, Inc. Methods of forming contact structures including alternating metal and silicon layers and related devices
US9548206B2 (en) 2010-02-11 2017-01-17 Cree, Inc. Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
DE102011013375A1 (de) 2011-03-09 2012-09-13 Marianne Auernhammer Ohmscher Kontakt auf Siliziumkarbid
JP6112699B2 (ja) * 2012-03-30 2017-04-12 富士電機株式会社 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP2014003252A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN102931224A (zh) * 2012-08-21 2013-02-13 中国科学院微电子研究所 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法
US10192970B1 (en) 2013-09-27 2019-01-29 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Simultaneous ohmic contact to silicon carbide
GB201405800D0 (en) * 2014-03-31 2014-05-14 Isis Innovation Process
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6350106B2 (ja) * 2014-08-20 2018-07-04 住友電気工業株式会社 炭化珪素半導体装置
CN109979813B (zh) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构
DE102019207866A1 (de) * 2019-05-29 2020-12-03 Robert Bosch Gmbh Verfahren zur Erzeugung eines ohmschen Kontakts auf einer Rückseite eines Siliziumkarbidsubstrats und ohmscher Kontakt
US11282927B2 (en) 2020-06-02 2022-03-22 Cree, Inc. Contact structures for semiconductor devices
US12439664B2 (en) 2022-06-24 2025-10-07 Wolfspeed, Inc. Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
US5502003A (en) * 1994-03-04 1996-03-26 Fuji Electric Co., Ltd. Silicon carbide electronic device manufacturing method
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6759683B1 (en) * 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
US20050245034A1 (en) * 2002-06-28 2005-11-03 National Institute Of Advanced Indust Sci& Tech Semiconductor device and its manufacturing method
US20060007727A1 (en) * 2002-09-12 2006-01-12 Griffith University Memory cell

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US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
JP3079851B2 (ja) * 1993-09-28 2000-08-21 富士電機株式会社 炭化けい素電子デバイスの製造方法
SE504916C2 (sv) * 1995-01-18 1997-05-26 Ericsson Telefon Ab L M Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
AU2001255874A1 (en) * 2000-05-02 2001-11-12 Case Western Reserve University Method for low temperature formation of stable ohmic contacts to silicon carbide
CA2322595C (en) 2000-10-06 2009-05-05 Konstantinos Zekentes Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6815323B1 (en) * 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US20040144301A1 (en) * 2003-01-24 2004-07-29 Neudeck Philip G. Method for growth of bulk crystals by vapor phase epitaxy

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
US5409859A (en) * 1992-09-10 1995-04-25 Cree Research, Inc. Method of forming platinum ohmic contact to p-type silicon carbide
US5502003A (en) * 1994-03-04 1996-03-26 Fuji Electric Co., Ltd. Silicon carbide electronic device manufacturing method
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
US5980265A (en) * 1994-06-03 1999-11-09 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silicon carbide, and method of making the same
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6759683B1 (en) * 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
US20050245034A1 (en) * 2002-06-28 2005-11-03 National Institute Of Advanced Indust Sci& Tech Semiconductor device and its manufacturing method
US20060007727A1 (en) * 2002-09-12 2006-01-12 Griffith University Memory cell

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284261A1 (en) * 2005-06-21 2006-12-21 Saptharishi Sriram Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US8203185B2 (en) 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US20100102331A1 (en) * 2006-11-02 2010-04-29 Sumitomo Electric Industries, Ltd. Ohmic electrode for sic semiconductor, method of manufacturing ohmic electrode for sic semiconductor, semiconductor device, and method of manufacturing semiconductor device
US8623752B2 (en) * 2006-11-02 2014-01-07 Sumitomo Electric Industries, Ltd. Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor device
US20080108190A1 (en) * 2006-11-06 2008-05-08 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US20090242901A1 (en) * 2006-11-06 2009-10-01 General Electric Company SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
US8377812B2 (en) 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US9129804B2 (en) * 2010-04-14 2015-09-08 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
EP2560194A4 (en) * 2010-04-14 2013-11-20 Sumitomo Electric Industries SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
US8674374B2 (en) 2010-04-14 2014-03-18 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
US20140170841A1 (en) * 2010-04-14 2014-06-19 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
CN102231363A (zh) * 2011-05-17 2011-11-02 中国电子科技集团公司第十三研究所 一种低比接触电阻、低粗糙度欧姆接触制作方法
US20160118258A1 (en) * 2012-12-18 2016-04-28 General Electric Company Systems and method for ohmic contacts in silicon carbide devices
US9601332B2 (en) * 2012-12-18 2017-03-21 General Electric Company Systems and method for ohmic contacts in silicon carbide devices
GB2553849A (en) * 2016-09-19 2018-03-21 Anvil Semiconductors Ltd Method of reducing device contact resistance
CN110797260A (zh) * 2018-08-02 2020-02-14 半导体组件工业公司 用于碳化硅功率半导体器件上的背侧欧姆接触的碳受控欧姆接触层

Also Published As

Publication number Publication date
TW200620432A (en) 2006-06-16
EP1774577A2 (en) 2007-04-18
KR101144882B1 (ko) 2012-05-14
US7875545B2 (en) 2011-01-25
AU2005270089A1 (en) 2006-02-09
JP5437576B2 (ja) 2014-03-12
AU2010200045A1 (en) 2010-01-28
WO2006014346A3 (en) 2006-09-21
WO2006014346A2 (en) 2006-02-09
JP2008506258A (ja) 2008-02-28
TWI270936B (en) 2007-01-11
CN101124660A (zh) 2008-02-13
CN100517574C (zh) 2009-07-22
KR20070032803A (ko) 2007-03-22
US20080116464A1 (en) 2008-05-22
CA2572959C (en) 2014-03-18
CA2572959A1 (en) 2006-02-09

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Owner name: CREE, INC., NORTH CAROLINA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WARD, ALLAN, II;HENNING, JASON PATRICK;HAGLEITNER, HELMUT;AND OTHERS;REEL/FRAME:015218/0012

Effective date: 20040910

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Owner name: NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA,

Free format text: CONFIRMATORY LICENSE;ASSIGNOR:CREE INCORPORATED;REEL/FRAME:019057/0891

Effective date: 20061002

STCB Information on status: application discontinuation

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