AU2005270089A1 - Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices - Google Patents

Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices Download PDF

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Publication number
AU2005270089A1
AU2005270089A1 AU2005270089A AU2005270089A AU2005270089A1 AU 2005270089 A1 AU2005270089 A1 AU 2005270089A1 AU 2005270089 A AU2005270089 A AU 2005270089A AU 2005270089 A AU2005270089 A AU 2005270089A AU 2005270089 A1 AU2005270089 A1 AU 2005270089A1
Authority
AU
Australia
Prior art keywords
silicon
nickel
silicon carbide
deposited film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2005270089A
Other languages
English (en)
Inventor
Helmut Hagleitner
Jason Patrick Henning
Alan Ward III
Keith Dennis Wieber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2005270089A1 publication Critical patent/AU2005270089A1/en
Priority to AU2010200045A priority Critical patent/AU2010200045A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Electrodes Of Semiconductors (AREA)
AU2005270089A 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices Abandoned AU2005270089A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2010200045A AU2010200045A1 (en) 2004-07-06 2010-01-06 Silicon-rich nickel-silicide phmic contacts for SiC semiconductor devices

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/884,930 2004-07-06
US10/884,930 US20060006393A1 (en) 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
PCT/US2005/023487 WO2006014346A2 (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
AU2010200045A Division AU2010200045A1 (en) 2004-07-06 2010-01-06 Silicon-rich nickel-silicide phmic contacts for SiC semiconductor devices

Publications (1)

Publication Number Publication Date
AU2005270089A1 true AU2005270089A1 (en) 2006-02-09

Family

ID=35519824

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2005270089A Abandoned AU2005270089A1 (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
AU2010200045A Abandoned AU2010200045A1 (en) 2004-07-06 2010-01-06 Silicon-rich nickel-silicide phmic contacts for SiC semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2010200045A Abandoned AU2010200045A1 (en) 2004-07-06 2010-01-06 Silicon-rich nickel-silicide phmic contacts for SiC semiconductor devices

Country Status (9)

Country Link
US (2) US20060006393A1 (cg-RX-API-DMAC7.html)
EP (1) EP1774577A2 (cg-RX-API-DMAC7.html)
JP (1) JP5437576B2 (cg-RX-API-DMAC7.html)
KR (1) KR101144882B1 (cg-RX-API-DMAC7.html)
CN (1) CN100517574C (cg-RX-API-DMAC7.html)
AU (2) AU2005270089A1 (cg-RX-API-DMAC7.html)
CA (1) CA2572959C (cg-RX-API-DMAC7.html)
TW (1) TWI270936B (cg-RX-API-DMAC7.html)
WO (1) WO2006014346A2 (cg-RX-API-DMAC7.html)

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US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
DE102006050360B4 (de) 2006-10-25 2014-05-15 Infineon Technologies Austria Ag Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC
JP4140648B2 (ja) * 2006-11-02 2008-08-27 住友電気工業株式会社 ＳｉＣ半導体用オーミック電極、ＳｉＣ半導体用オーミック電極の製造方法、半導体装置および半導体装置の製造方法
US20080108190A1 (en) * 2006-11-06 2008-05-08 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US8377812B2 (en) * 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US9214352B2 (en) 2010-02-11 2015-12-15 Cree, Inc. Ohmic contact to semiconductor device
US8563372B2 (en) * 2010-02-11 2013-10-22 Cree, Inc. Methods of forming contact structures including alternating metal and silicon layers and related devices
US9548206B2 (en) 2010-02-11 2017-01-17 Cree, Inc. Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
CA2769697A1 (en) * 2010-04-14 2011-10-20 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
DE102011013375A1 (de) 2011-03-09 2012-09-13 Marianne Auernhammer Ohmscher Kontakt auf Siliziumkarbid
CN102231363B (zh) * 2011-05-17 2012-11-07 中国电子科技集团公司第十三研究所 一种低比接触电阻、低粗糙度欧姆接触制作方法
JP6112699B2 (ja) * 2012-03-30 2017-04-12 富士電機株式会社 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP2014003252A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN102931224A (zh) * 2012-08-21 2013-02-13 中国科学院微电子研究所 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法
US9230807B2 (en) * 2012-12-18 2016-01-05 General Electric Company Systems and methods for ohmic contacts in silicon carbide devices
US10192970B1 (en) 2013-09-27 2019-01-29 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Simultaneous ohmic contact to silicon carbide
GB201405800D0 (en) * 2014-03-31 2014-05-14 Isis Innovation Process
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6350106B2 (ja) * 2014-08-20 2018-07-04 住友電気工業株式会社 炭化珪素半導体装置
GB2553849A (en) * 2016-09-19 2018-03-21 Anvil Semiconductors Ltd Method of reducing device contact resistance
US10629686B2 (en) * 2018-08-02 2020-04-21 Semiconductor Components Industries, Llc Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
CN109979813B (zh) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构
DE102019207866A1 (de) * 2019-05-29 2020-12-03 Robert Bosch Gmbh Verfahren zur Erzeugung eines ohmschen Kontakts auf einer Rückseite eines Siliziumkarbidsubstrats und ohmscher Kontakt
US11282927B2 (en) 2020-06-02 2022-03-22 Cree, Inc. Contact structures for semiconductor devices
US12439664B2 (en) 2022-06-24 2025-10-07 Wolfspeed, Inc. Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

Family Cites Families (15)

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US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3079851B2 (ja) * 1993-09-28 2000-08-21 富士電機株式会社 炭化けい素電子デバイスの製造方法
JP3085078B2 (ja) * 1994-03-04 2000-09-04 富士電機株式会社 炭化けい素電子デバイスの製造方法
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
SE504916C2 (sv) * 1995-01-18 1997-05-26 Ericsson Telefon Ab L M Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
AU2001255874A1 (en) * 2000-05-02 2001-11-12 Case Western Reserve University Method for low temperature formation of stable ohmic contacts to silicon carbide
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
CA2322595C (en) 2000-10-06 2009-05-05 Konstantinos Zekentes Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6759683B1 (en) * 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
DE10394374B4 (de) * 2002-06-28 2013-02-21 National Institute Of Advanced Industrial Science And Technology Halbleitervorrichtung und Verfahren zur Herstellung derselben
TWI320571B (en) * 2002-09-12 2010-02-11 Qs Semiconductor Australia Pty Ltd Dynamic nonvolatile random access memory ne transistor cell and random access memory array
US6815323B1 (en) * 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US20040144301A1 (en) * 2003-01-24 2004-07-29 Neudeck Philip G. Method for growth of bulk crystals by vapor phase epitaxy

Also Published As

Publication number Publication date
TW200620432A (en) 2006-06-16
EP1774577A2 (en) 2007-04-18
KR101144882B1 (ko) 2012-05-14
US7875545B2 (en) 2011-01-25
JP5437576B2 (ja) 2014-03-12
AU2010200045A1 (en) 2010-01-28
WO2006014346A3 (en) 2006-09-21
WO2006014346A2 (en) 2006-02-09
JP2008506258A (ja) 2008-02-28
US20060006393A1 (en) 2006-01-12
TWI270936B (en) 2007-01-11
CN101124660A (zh) 2008-02-13
CN100517574C (zh) 2009-07-22
KR20070032803A (ko) 2007-03-22
US20080116464A1 (en) 2008-05-22
CA2572959C (en) 2014-03-18
CA2572959A1 (en) 2006-02-09

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MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted