US20050065352A1 - Process for the purification of thiophenes - Google Patents

Process for the purification of thiophenes Download PDF

Info

Publication number
US20050065352A1
US20050065352A1 US10/942,409 US94240904A US2005065352A1 US 20050065352 A1 US20050065352 A1 US 20050065352A1 US 94240904 A US94240904 A US 94240904A US 2005065352 A1 US2005065352 A1 US 2005065352A1
Authority
US
United States
Prior art keywords
thiophene
branched
linear
solution
radical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/942,409
Other languages
English (en)
Inventor
Lutz Brassat
Stephan Kirchmeyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HC Starck GmbH
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to H.C. STARCK GMBH reassignment H.C. STARCK GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BRASSAT, LUTZ, KIRCHMEYER, STEPHAN
Publication of US20050065352A1 publication Critical patent/US20050065352A1/en
Assigned to H.C. STARCK GMBH reassignment H.C. STARCK GMBH MERGER (SEE DOCUMENT FOR DETAILS). Assignors: H.C. STARCK GMBH & CO. KG
Priority to US12/498,739 priority Critical patent/US7994345B2/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/06Peri-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/06Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
    • C07D333/14Radicals substituted by singly bound hetero atoms other than halogen
    • C07D333/16Radicals substituted by singly bound hetero atoms other than halogen by oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/26Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D333/30Hetero atoms other than halogen
    • C07D333/32Oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
    • H01G11/30Electrodes characterised by their material
    • H01G11/48Conductive polymers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424Plated through-holes or plated via connections characterised by electroplating method by direct electroplating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13Energy storage using capacitors

Definitions

  • the invention relates to a process for the purification of thiophenes which are liquid at room temperature, the thiophenes purified by this process and their use.
  • Thiophenes are used, for example, for the preparation of conductive polymers.
  • Poly(3,4-alkylenedioxythiophenes) such as are described, for example, in EP-A 339 340, are of particular interest in this context. These compounds are distinguished by particular properties, such as high conductivity, high transparency and outstanding long-term stability. They have therefore found increasing use in industry as organic conductive polymers. Thus e.g. through-plating of printed circuit boards, antistatic treatment of photographic films and use as an electrode or solid electrolyte in solid electrolyte capacitors are described as important fields of use.
  • the properties of the resulting polymers may also be adversely influenced in that the impurities, for example, adversely change the intrinsic colour of the resulting polymer and as a result the transparency, which is essential for the use of the polymers e.g. as transparent conductive or antistatic coatings, is impaired.
  • Impurities which are also capable of polymerization can be co-incorporated into the polymer and thereby significantly lower the conductivity thereof. Further adverse effects of impurities can be that the order of the conductive layers may be lowered by impurities, whereby poorer conductivities result, that impurities become concentrated on the surface of the polymer after the polymerization and undesirable transition resistances thereby result, so that the function of the conductive layer is restricted, or that the long-term stability of the conductive polymers is adversely influenced in that the impurities, for example, initiate reaction of the conductive polymer with oxygen and thus significantly impair the properties of the polymer.
  • Thiophenes which are liquid at room temperature and are suitable for the preparation of electrically conductive polymers are of particular importance because of their easy processability in the liquid form.
  • the expert has available the purification methods which can be used on liquid substances, preferably distillation, which is also carried out on a large industrial scale, extraction and chromatography.
  • Distillative purification of thiophenes as monomers for use for the preparation of electrically conductive polymers is known, for example, from EP-A 1 142 888.
  • the doctrine of EP-A 1 142 888 is that the number and amount of by-products can be reduced by optimized reaction conditions and e.g. 3,4-ethylenedioxythiophene is obtainable in a purity of up to 97.7%.
  • the doctrine of EP-A 1 142 888 furthermore is that for further purification an additional extraction is necessary in order to remove water-soluble by-products and to achieve a purity of more than 99%.
  • 3,4-Dimethoxythiophene predominantly occurs as a secondary component, i.e. impurity, in this synthesis of 3,4-ethylenedioxythiophene.
  • 3,4-alkylenedioxythiophenes in particular of 3,4-ethylenedioxythiophene, which are contaminated with 3,4-dimethoxythiophene represents a particular difficulty.
  • 3,4-dimethoxythiophene produced during the synthesis of 3,4-ethylenedioxythiophene can be separated off only with a high expenditure because of the molecular weight differing by only two units and the very similar structure, which makes purification via distillation no longer economical beyond a certain degree of purity.
  • 3,4-Dimethoxythiophene as an impurity has the disadvantage, however, that it is co-incorporated into the polymer during polymerization and can thus adversely influence properties of the polymer, such as, for example, the conductivity.
  • WO-A 02/79295 describes the preparation of liquid and solid chiral alkylenedioxythiophenes and mentions in examples the purification by chromatography on silicon dioxide.
  • the compounds prepared according to WO-A 02/79295 have purities of up to 99.7% after purification.
  • chromatographic separation also has disadvantages. Thus, large amount of solvents are needed to carry it out, since the compounds to be separated must be in a very dilute form in order to achieve the desired separation effect.
  • the chromatographic separation cannot be operated continuously with the aid of simple apparatuses, so that in each case only small amounts of the desired purified thiophene are obtained. A continuous separation of large amounts would therefore be associated with an extremely high expenditure on apparatus, so that such a purification of thiophenes can no longer be carried out economically.
  • a particular form of crystallization can also be used for the crystallization of liquid thiophenes.
  • This specific form of crystallization, melt crystallization is described, for example, in N. Wynn, Chem. Engineering (1986), 93(8), 26-27 and in J. Ulrich and H, C. Bülau, Editor(s): Myerson, Allan S. “Handbook of Industrial Crystallization (2nd Edition)” (2002), 161-179.
  • Melt crystallization is substantially based on cooling a liquid substance until a melt is formed, from which only the substance to be purified crystallizes out. After crystallization, the mother liquid, which in the ideal case contains all the impurities, is separated off.
  • the crystallized substance is heated gently so that impurities adhering to the product can be removed together with some of the substance which is then melting.
  • this process is limited to substances or substance mixtures which contain relatively large amounts of impurities which can be separated off in liquid form. Small amounts of impurities can be removed only uneconomically via this process, since large amounts of the desired compound have to be separated off at the same time in order to wash out the small amount of impurity.
  • melt crystallization is critical in respect of the temperature programme and therefore expensive on apparatus.
  • the present invention was therefore based on the object of discovering a less expensive process for the purification of thiophenes with which highly pure 3,4-alkylenedioxythiophenes, preferably with a purity of more than 99.9%, can be prepared.
  • thiophenes which are liquid at room temperature are to be understood as those thiophenes which have their melting point below +40° C., preferably below +30° C.
  • room temperature can be a temperature of 10 to 40° C., preferably 15 to 30° C., particularly preferably 18 to 25° C.
  • Thiophenes of the general formula (I) which are preferably purified with the process according to the invention are compounds of the general formula (II) wherein
  • the general formula (II) is to be understood such that the substituent R can be bonded to the alkylene or arylene radical A x times.
  • Preferred compounds of the general formula (II) are those of the general formula (IIa) wherein
  • C 1 -C 5 -alkylene radicals A are methylene, ethylene, n-propylene, n-butylene or n-pentylene.
  • C 1 -C 12 -arylene radicals can be, for example, phenylene, naphthylene, benzylidene or anthracenylidene.
  • C 1 -C 18 - represents linear or branched C 1 -C 18 -alkyl radicals, such as, for example, methyl, ethyl, n- or isopropyl, n-, iso-, sec- or tert-butyl, n-pentyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1-ethylpropyl, 1,1-dimethylpropyl, 1,2-dimethylpropyl, 2,2-dimethylpropyl, n-hexyl, n-heptyl, n-octyl, 2-ethylhexyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-hexadecyl or n-octadecyl
  • C 1 -C 20 -alkyl groups moreover include, for example, n-nonadecyl and n-eicosyl.
  • C 5 -C 12 -cycloalkyl represents C 5 -C 12 -cycloalkyl radicals, such as, for example, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclononyl or cyclodecyl
  • C 5 -C 14 -aryl represents C 5 -C 14 -aryl radicals, such as, for example, phenyl or naphthyl
  • C 7 -C 8 -aralkyl represents C 7 -C 18 -aralkyl radicals, such as, for example, benzyl, o-, m- or p-tolyl, 2,3-, 2,4-, 2,5-, 2,6-, 3,4- or 3,5-xylyl or mesityl
  • C 1 -C 20 -oxyalkyl represents C 1 -C 20 -oxyalkyl radicals, such as, for example, methoxy, ethoxy, n- or iso-propoxy, n-, iso-, sec- or tert-butoxy, n-pentyloxy, 1-methylbutyloxy, 2-methylbutyloxy, 3-methylbutyloxy, 1-ethylpropyloxy, 1,1-dimethylpropyloxy, 1,2-dimethylpropyloxy, 2,2-dimethylpropyloxy, n-hexyloxy, n-heptyloxy, n-octyloxy, 2-ethylhexyloxy, n-nonyloxy, n-decyloxy, n-undecyloxy, n-dodecyloxy, n-tridecyloxy, n-tetradecyloxy, n-hexade
  • alkylene or arylene radicals A which are optionally possible are numerous organic groups, for example alkyl, cycloalkyl, aryl, halogen, ether, thioether, disulfide, sulfoxide, sulfone, sulfonate, amino, aldehyde, keto, carboxylic acid ester, carboxylic acid, carbonate, carboxylate, cyano, alkylsilane and alkoxysilane groups, as well as carboxylamide groups.
  • organic groups for example alkyl, cycloalkyl, aryl, halogen, ether, thioether, disulfide, sulfoxide, sulfone, sulfonate, amino, aldehyde, keto, carboxylic acid ester, carboxylic acid, carbonate, carboxylate, cyano, alkylsilane and alkoxysilane groups, as well as carboxylamide groups.
  • the thiophene to be purified has one or more stereocentres
  • the thiophene can be a racemate, an enantiomerically pure or diastereomerically pure compound or an enantiomerically enriched or diastereomerically enriched compound.
  • An enantiomerically enriched compound is to be understood as meaning a compound having an enantiomer excess (ee) of more than 50%.
  • a diastereomerically enriched compound is to be understood as meaning a compound having a diastereomer excess (de) of more than 30%. According to the invention, however, the compound can also be any desired mixture of diastereomers.
  • the thiophene to be purified preferably has a purity of greater than 70%, particularly preferably a purity of greater than 90%.
  • the thiophenes of the general formulae (I), (II) or (IIa) to be purified can be prepared by processes known to the expert. Such a preparation process is described, for example, in EP-A 1 142 888.
  • Solvents which are employed are those in which the thiophene to be purified dissolves and which have a sufficiently low melting point, preferably below ⁇ 40° C.
  • suitable solvents which may be mentioned are isobutyl methyl ketone, chloroform, methylene chloride, toluene, methanol, propanol, ethanol, acetone, iso-propanol, n-butanol, sec-butanol, dimethylformamide, methyl tert-butyl ether, tetrahydrofuran, diethyl ether, hexane or pentane.
  • Preferred solvents are polar solvents, and alcohols are particularly preferred in this context. Methanol or ethanol are very particularly preferred.
  • the solvent can also be a mixture of two or more solvents.
  • Mixtures of one or more alcohol(s) optionally with one or more further solvent(s) are preferred in this context.
  • each individual solvent it is not absolutely necessary for each individual solvent to dissolve the thiophene and to have a correspondingly low melting point, merely the mixture must have these properties.
  • a mixture of two alcohols is particularly preferred, and a mixture of methanol and ethanol is very particularly preferred.
  • the solvent is mixed with the thiophene in a ratio of 0.01:1 to 10:1, preferably in a ratio of 0.3:1 to 3:1 and very particularly preferably in a ratio of 1:1.
  • the new process is carried out e.g. by a procedure in which the thiophenes to be purified and at least one solvent are brought together in any desired sequence, the solvent or solvents, before being brought together with the thiophene, or the solution obtained during or after bringing them together, is or are cooled down to a temperature at which a mixture of a solid and a liquid forms, the mixture of a solid and a liquid is optionally subsequently stirred and the solid is then separated off.
  • the solvent or solvents before being brought together with the thiophenes, or the solution obtained during or after bringing them together is or are cooled down to a temperature which is at least 10° C., preferably at least 20° C. below the melting temperature of the pure thiophene to be purified. Cooling particularly preferably takes place to 0° C. or lower, very particularly preferably to ⁇ 15° C. or lower.
  • the new process can be carried out, for example, by dissolving the thiophenes in the solvent(s) and then cooling this solution down at least to the extent that the purified thiophene precipitates out or crystallizes out.
  • the thiophene can be dissolved in the solvent(s) at a temperature above the melting point of the thiophene.
  • a temperature of between 0° C. and +40° C. is preferred.
  • a temperature of between +15° C. and +25° C. is particularly preferred.
  • the solution obtained from the solvent and the thiophene is then cooled.
  • the solution is cooled here until the thiophene separates out or crystallizes out of the solution in the form of a solid.
  • the solution is cooled to a temperature of at least 20° C. below the melting temperature of the pure thiophene. Cooling to ⁇ 15° C. or to a temperature of lower than ⁇ 15° C. is particularly preferred.
  • the solution is preferably cooled down at a rate such that the thiophene crystallizes out within a period of a few minutes to several hours. Cooling down to the desired temperature over a period of approx. one hour is preferred here.
  • the cooling down can be effected by external cooling or by introduction of an inert cooling medium.
  • the cooling down is preferably achieved by external cooling.
  • the thiophene separates out of the solution as a solid, for example in the form of crystals.
  • the solid obtained can contain the thiophene as the pure substance or can consist of a mixture of the solvent(s) and the thiophene.
  • the new process can be carried out by a procedure in which the liquid thiophene is metered into the already cooled solvent. Solvent mixture or cooled thiophene solution.
  • the solvent is cooled to a temperature of at least 20° C. below the melting temperature of the pure thiophene. Cooling to ⁇ 15° C. or a temperature of lower than ⁇ 15° C. is particularly preferred.
  • the liquid thiophene is then metered into the cooled solvent—preferably over a period of a few minutes to several hours.
  • the metering rate is to be chosen here such that the thiophene does not precipitate out or crystallize out too rapidly and impurities are thereby also included in the solid.
  • a metering time of at least 1 hour is preferred. However, metering times of less than one hour may also be sufficient, depending on the amount of thiophene which must be metered in.
  • the solid obtained can also contain the thiophene as the pure substance or consist of a mixture of the solvent(s) and the thiophene.
  • the suspension obtained is then subsequently stirred for a period of 1 minute up to 5 hours.
  • a subsequent stirring time of approx. three hours is particularly preferred here.
  • the subsequent stirring is carried out at a temperature of at least 20° C. below the melting temperature of the pure thiophene.
  • a temperature of ⁇ 15° C. or a temperature of lower than ⁇ 15° C. is preferred here.
  • the product which has precipitated out or crystallized out is then separated off by known methods.
  • This separating off is preferably carried out by a filtration.
  • the filtration can be carried out under normal pressure or under pressure.
  • the filtration is preferably carried out with the aid of a filter unit which can be temperature-controlled, and is preferably carried out such that the product to be filtered is present as a solid during the filtration.
  • the filtration is preferably carried out at a temperature of between 0° C. and ⁇ 20° C. Preferably, the filtration is carried out at ⁇ 15° C. or a temperature of lower than ⁇ 15° C.
  • the solid obtained can be washed with one or more solvent(s) in order to remove residues of impurities from the filter cake.
  • Polar solvents are preferably used for this purpose.
  • Alcohols optionally in a mixture with one another and/or with further solvents, are particularly preferably used.
  • the solid is particularly preferably washed with ethanol or methanol or a mixture of these.
  • the washing agent i.e. the solvent used for the washing
  • the washing agent has a temperature below 0° C. during the washing.
  • the washing agent is cooled down to ⁇ 15° C. or lower for the washing.
  • the solid then obtained is warmed to a temperature above the melting point of the thiophene over a period of between 5 minutes and 5 hours. Preferably, the solid is allowed to melt over a period of 1 hour.
  • the molten solid may still contain residues of the solvent added before the crystallization or residues of the washing agent. These residues can be removed by methods known to the expert, e.g. by simple distillation.
  • the solvent is distilled over during the distillation.
  • the distillation can be carried out under normal pressure or under reduced pressure. Preferably, it is carried out under reduced pressure at temperatures of between 30° C. and 150° C., preferably between 50° C. and 100° C.
  • the thiophene obtained in this way which remains as the bottom product, preferably has a purity of at least 99.50%, preferably at least 99.9%, after the solvent has been distilled off completely.
  • thiophenes which have been synthesized using 3,4-dimethoxythiophene or during the synthesis of which 3,4-dimethoxythiophene is produced as a by-product contain less than 0.05 wt. % of 3,4-dimethoxythiophene after purification with the process according to the invention.
  • Such a low content of 3,4-dimethoxythiophene cannot be achieved or can be achieved only with a very high loss in the yield of the desired thiophene with conventional purification processes, such as e.g. simple distillation.
  • Particular preferred is a 3,4-ethylene-dioxythiophene with such purity.
  • the thiophene remaining as the bottom product after the distillation can also be distilled over to separate off traces of colouring substances. As a rule, a thiophene which is colourless to the eye is obtained by this means.
  • the distillation of the thiophene is also preferably carried out under reduced pressure.
  • up to 70%, preferably up to 90%, particularly preferably up to 95% and very particularly preferably virtually 100% of the thiophene employed is obtained in the purified form, depending on the amount of solvent used in relation to the amount of thiophene employed and depending on the temperature during the precipitation and, where appropriate, during the washing. Any remaining portion of the thiophene employed remains dissolved in the mother liquor, i.e. e.g. in the filtrate separated off during the filtration, or, where appropriate, in the washing agent.
  • the purification process can also be carried out by a procedure in which the mother liquor of a preceding precipitation or crystallization and/or the washing agent is or are employed again as solvent or together with the solvent in the process for the purification of further thiophene.
  • the process according to the invention renders possible the purification of thiophenes in a simple procedure.
  • the products are moreover obtained in good yields.
  • the thiophenes purified by the process according to the invention are outstandingly suitable for the preparation of conductive polymers or for the preparation of organic semiconductors which are suitable e.g. in the production of capacitors, printed circuit boards, antistatic layers, transparent conductive layers, displays, electrochromic glazing and integrated semiconductor circuits. These uses are further subject matter of the invention.
  • 1,800 g 3,4-ethylenedioxythiophene having a purity of 98.4% and a content of 3,4-dimethoxythiophene of 0.3% and a slightly yellowish colour were stirred with 2,400 ml ethanol in a sulfonating beaker.
  • the solution was cooled down to a temperature of ⁇ 15° C. by external cooling and stirred at ⁇ 15° C. for 3 h.
  • the solid formed was separated off with the aid of a suction filter and washed with ethanol precooled to ⁇ 15° C.
  • the filter cake was warmed to a temperature of +20° C.
  • a distillation apparatus comprising a reservoir flask, a distillation bridge and a condensation flask
  • the solvent was first distilled off under a pressure of 16 hPa at a temperature of 50° C. and 3,4-ethylenedioxythiophene was then distilled at a temperature of 90° C. under a pressure of 16 hPa.
  • 1,374 g 3,4-ethylenedioxythiophene (76% of theory) were obtained in a purity of 100%.
  • the colourless product no longer contained 3,4-dimethoxythiophene.
  • 1,800 g 3,4-ethylenedioxythiophene having a purity of 70% and a content of 3,4-dimethoxythiophene of 0.3% and a dark brown colour were stirred with 1,800 ml ethanol in a sulfonating beaker.
  • the solution was cooled down to a temperature of ⁇ 23° C. by external cooling and stirred at ⁇ 23° C. for 3 h.
  • the solid formed was separated off with the aid of a suction filter and washed with ethanol precooled to ⁇ 15° C.
  • the filter cake separated off was warmed to a temperature of +20° C.
  • a distillation apparatus comprising a reservoir flask, a distillation bridge and a condensation flask
  • the solvent was first distilled off under a pressure of 12 hPa at a temperature of 50° C. and 3,4-ethylenedioxythiophene was then distilled at a temperature of 90° C. under a pressure of 12 hPa. 718 g 3,4-ethylenedioxy-thiophene (55% of theory) were obtained in a purity of 99.2%. The product no longer contained 3,4-dimethoxythiophene.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cephalosporin Compounds (AREA)
US10/942,409 2003-09-23 2004-09-16 Process for the purification of thiophenes Abandoned US20050065352A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/498,739 US7994345B2 (en) 2003-09-23 2009-07-07 Process for the purification of thiophenes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10343873A DE10343873A1 (de) 2003-09-23 2003-09-23 Verfahren zur Reinigung von Thiophenen
DE10343873.4 2003-09-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/498,739 Division US7994345B2 (en) 2003-09-23 2009-07-07 Process for the purification of thiophenes

Publications (1)

Publication Number Publication Date
US20050065352A1 true US20050065352A1 (en) 2005-03-24

Family

ID=34177890

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/942,409 Abandoned US20050065352A1 (en) 2003-09-23 2004-09-16 Process for the purification of thiophenes
US12/498,739 Expired - Fee Related US7994345B2 (en) 2003-09-23 2009-07-07 Process for the purification of thiophenes

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/498,739 Expired - Fee Related US7994345B2 (en) 2003-09-23 2009-07-07 Process for the purification of thiophenes

Country Status (14)

Country Link
US (2) US20050065352A1 (enrdf_load_stackoverflow)
EP (1) EP1518859B1 (enrdf_load_stackoverflow)
JP (1) JP4843207B2 (enrdf_load_stackoverflow)
KR (1) KR20050030118A (enrdf_load_stackoverflow)
CN (1) CN1616451B (enrdf_load_stackoverflow)
AT (1) ATE356132T1 (enrdf_load_stackoverflow)
CA (1) CA2482113A1 (enrdf_load_stackoverflow)
DE (2) DE10343873A1 (enrdf_load_stackoverflow)
DK (1) DK1518859T3 (enrdf_load_stackoverflow)
ES (1) ES2283917T3 (enrdf_load_stackoverflow)
MX (1) MXPA04009161A (enrdf_load_stackoverflow)
PT (1) PT1518859E (enrdf_load_stackoverflow)
RU (1) RU2379310C2 (enrdf_load_stackoverflow)
TW (1) TWI330182B (enrdf_load_stackoverflow)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090244812A1 (en) * 2008-04-01 2009-10-01 Avx Corporation Hermetically Sealed Capacitor Assembly
US20100304147A1 (en) * 2007-11-01 2010-12-02 H.C. Starck Clevios Gmbh Method for coating layers which contain nonpolar poly-aromatics
US8194395B2 (en) 2009-10-08 2012-06-05 Avx Corporation Hermetically sealed capacitor assembly
US8279584B2 (en) 2010-08-12 2012-10-02 Avx Corporation Solid electrolytic capacitor assembly
US8300387B1 (en) 2011-04-07 2012-10-30 Avx Corporation Hermetically sealed electrolytic capacitor with enhanced mechanical stability
US8379372B2 (en) 2011-04-07 2013-02-19 Avx Corporation Housing configuration for a solid electrolytic capacitor
US8451588B2 (en) 2011-03-11 2013-05-28 Avx Corporation Solid electrolytic capacitor containing a conductive coating formed from a colloidal dispersion
US8493713B2 (en) 2010-12-14 2013-07-23 Avx Corporation Conductive coating for use in electrolytic capacitors
US8576543B2 (en) 2010-12-14 2013-11-05 Avx Corporation Solid electrolytic capacitor containing a poly(3,4-ethylenedioxythiophene) quaternary onium salt
US8824122B2 (en) 2010-11-01 2014-09-02 Avx Corporation Solid electrolytic capacitor for use in high voltage and high temperature applications
US8848342B2 (en) 2010-11-29 2014-09-30 Avx Corporation Multi-layered conductive polymer coatings for use in high voltage solid electrolytic capacitors
US8947857B2 (en) 2011-04-07 2015-02-03 Avx Corporation Manganese oxide capacitor for use in extreme environments
US8971019B2 (en) 2012-03-16 2015-03-03 Avx Corporation Wet capacitor cathode containing an alkyl-substituted poly(3,4-ethylenedioxythiophene)
US9053854B2 (en) 2012-03-01 2015-06-09 Avx Corporation Ultrahigh voltage solid electrolytic capacitor
US9214285B2 (en) 2012-04-11 2015-12-15 Avx Corporation Solid electrolytic capacitor with enhanced mechanical stability under extreme conditions
US9324503B2 (en) 2013-03-15 2016-04-26 Avx Corporation Solid electrolytic capacitor
US9472350B2 (en) 2013-05-13 2016-10-18 Avx Corporation Solid electrolytic capacitor containing a multi-layered adhesion coating
US9754730B2 (en) 2015-03-13 2017-09-05 Avx Corporation Low profile multi-anode assembly in cylindrical housing
US9767964B2 (en) 2011-04-07 2017-09-19 Avx Corporation Multi-anode solid electrolytic capacitor assembly
US9824826B2 (en) 2013-05-13 2017-11-21 Avx Corporation Solid electrolytic capacitor containing conductive polymer particles
US9865401B2 (en) 2012-08-30 2018-01-09 Avx Corporation Method for manufacturing solid electrolytic capacitor, and solid electrolytic capacitor
US9892862B2 (en) 2013-05-13 2018-02-13 Avx Corporation Solid electrolytic capacitor containing a pre-coat layer
US9928963B2 (en) 2015-03-13 2018-03-27 Avx Corporation Thermally conductive encapsulant material for a capacitor assembly
US10014108B2 (en) 2015-03-13 2018-07-03 Avx Corporation Low profile multi-anode assembly
US10297393B2 (en) 2015-03-13 2019-05-21 Avx Corporation Ultrahigh voltage capacitor assembly
US10431389B2 (en) 2016-11-14 2019-10-01 Avx Corporation Solid electrolytic capacitor for high voltage environments
US11081288B1 (en) 2018-08-10 2021-08-03 Avx Corporation Solid electrolytic capacitor having a reduced anomalous charging characteristic
US11380492B1 (en) 2018-12-11 2022-07-05 KYOCERA AVX Components Corporation Solid electrolytic capacitor
US11756742B1 (en) 2019-12-10 2023-09-12 KYOCERA AVX Components Corporation Tantalum capacitor with improved leakage current stability at high temperatures
US11763998B1 (en) 2020-06-03 2023-09-19 KYOCERA AVX Components Corporation Solid electrolytic capacitor

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003275203A1 (en) 2002-09-24 2004-04-19 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
WO2004029133A1 (en) 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polyanilines made with polymeric acid colloids for electronics applications
US7390438B2 (en) 2003-04-22 2008-06-24 E.I. Du Pont De Nemours And Company Water dispersible substituted polydioxythiophenes made with fluorinated polymeric sulfonic acid colloids
US7351358B2 (en) 2004-03-17 2008-04-01 E.I. Du Pont De Nemours And Company Water dispersible polypyrroles made with polymeric acid colloids for electronics applications
EP1839316A4 (en) * 2004-12-30 2009-01-28 Du Pont CONDUCTIVE POLYMERS
KR101334442B1 (ko) * 2004-12-30 2013-12-02 이 아이 듀폰 디 네모아 앤드 캄파니 유도화된 3,4-알킬렌디옥시티오펜 단량체, 그의 제조 방법,및 그의 용도
US7749407B2 (en) 2005-06-28 2010-07-06 E.I. Du Pont De Nemours And Company High work function transparent conductors
US8049205B2 (en) * 2006-04-06 2011-11-01 Xerox Corporation Poly(alkynylthiophene)s and electronic devices generated therefrom
DE102006020744A1 (de) * 2006-05-04 2007-11-08 H. C. Starck Gmbh & Co. Kg Verfahren zur Stabilisierung von Thiophenderivaten
US8153029B2 (en) 2006-12-28 2012-04-10 E.I. Du Pont De Nemours And Company Laser (230NM) ablatable compositions of electrically conducting polymers made with a perfluoropolymeric acid applications thereof
US20080191172A1 (en) 2006-12-29 2008-08-14 Che-Hsiung Hsu High work-function and high conductivity compositions of electrically conducting polymers
JP2009256276A (ja) * 2008-04-21 2009-11-05 Tayca Corp 3,4−アルキレンジオキシチオフェンの製造方法
JP5745881B2 (ja) * 2011-02-14 2015-07-08 テイカ株式会社 固体電解コンデンサ
FR3005894B1 (fr) * 2013-05-23 2020-12-25 Centre Nat Rech Scient Materiau superoleophobe et/ou superhydrophobe, son procede de preparation et ses applications
KR102675458B1 (ko) 2018-08-10 2024-06-17 교세라 에이브이엑스 컴포넌츠 코포레이션 폴리아닐린을 포함하는 고체 전해 커패시터
US11462366B2 (en) 2018-08-10 2022-10-04 KYOCERA AVX Components Corporation Solid electrolytic capacitor containing an intrinsically conductive polymer
US11114250B2 (en) 2018-08-10 2021-09-07 Avx Corporation Solid electrolytic capacitor formed from conductive polymer particles
WO2020123577A1 (en) 2018-12-11 2020-06-18 Avx Corporation Solid electrolytic capacitor containing an intrinsically conductive polymer
DE112020002426T5 (de) 2019-05-17 2022-01-27 Avx Corporation Festelektrolytkondensator
US11670461B2 (en) 2019-09-18 2023-06-06 KYOCERA AVX Components Corporation Solid electrolytic capacitor for use at high voltages
CN114787952B (zh) 2019-12-10 2025-02-11 京瓷Avx元器件公司 包含预涂层和本征导电聚合物的固体电解电容器
KR102774931B1 (ko) 2019-12-10 2025-03-04 교세라 에이브이엑스 컴포넌츠 코포레이션 안정성이 증가된 탄탈 커패시터
US11631548B2 (en) 2020-06-08 2023-04-18 KYOCERA AVX Components Corporation Solid electrolytic capacitor containing a moisture barrier
CN116003431A (zh) * 2022-12-23 2023-04-25 广东华鸿科技有限公司 一种高纯度3,4-乙烯二氧噻吩的提纯方法及其应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959430A (en) * 1988-04-22 1990-09-25 Bayer Aktiengesellschaft Polythiophenes, process for their preparation and their use
US20010034453A1 (en) * 2000-04-04 2001-10-25 Gunter Rauchschwalbe Process for the preparation of dialkylthiophenes and alkylenedioxythiophenes
US20030055130A1 (en) * 2001-03-29 2003-03-20 Agfa-Gevaert New thiophenes and polymers derived therefrom
US6825357B2 (en) * 2001-07-12 2004-11-30 Bayer Aktiengesellschaft Benzodioxinothiophenes, their preparation and use
US7202369B2 (en) * 2002-11-19 2007-04-10 Woon-Phil Baik Processes for preparing of 3,4-alkylenedioxythiophenes and 3,4-dialkoxythiophenes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104635B2 (ja) * 1986-03-31 1994-12-21 住金化工株式会社 メチルナフタレンの精製方法
EP0833352A4 (en) * 1996-04-26 2005-07-20 Nippon Chemicon SOLID ELECTROLYTE CAPACITOR AND ITS MANUFACTURE
FR2774984B1 (fr) * 1998-02-18 2000-03-24 Atochem Elf Sa Purification du thiophene
DE19822075C2 (de) * 1998-05-16 2002-03-21 Enthone Gmbh Verfahren zur metallischen Beschichtung von Substraten
NO314525B1 (no) * 1999-04-22 2003-03-31 Thin Film Electronics Asa Fremgangsmåte ved fremstillingen av organiske halvledende innretninger i tynnfilm
WO2002079295A1 (en) * 2001-03-29 2002-10-10 Agfa-Gevaert Thiophenes and polymers derived therefrom
EP1321483A1 (en) * 2001-12-20 2003-06-25 Agfa-Gevaert 3,4-alkylenedioxythiophene compounds and polymers thereof
EP1323763A1 (en) * 2001-12-20 2003-07-02 Agfa-Gevaert 3,4-Alkylenedioxy-thiophene copolymers

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959430A (en) * 1988-04-22 1990-09-25 Bayer Aktiengesellschaft Polythiophenes, process for their preparation and their use
US4987042A (en) * 1988-04-22 1991-01-22 Bayer Aktiengesellschaft Polythiophenes, process for their preparation and their use
US5035926A (en) * 1988-04-22 1991-07-30 Bayer Aktiengesellschaft Method of imparting antistatic properties to a substrate by coating the substrate with a novel polythiophene
US20010034453A1 (en) * 2000-04-04 2001-10-25 Gunter Rauchschwalbe Process for the preparation of dialkylthiophenes and alkylenedioxythiophenes
US6369239B2 (en) * 2000-04-04 2002-04-09 Bayer Aktiengesellschaft Process for the preparation of dialkylthiophenes and alkylenedioxythiophenes
US20030055130A1 (en) * 2001-03-29 2003-03-20 Agfa-Gevaert New thiophenes and polymers derived therefrom
US7094865B2 (en) * 2001-03-29 2006-08-22 Agfa Gevaert Thiophenes and polymers derived therefrom
US6825357B2 (en) * 2001-07-12 2004-11-30 Bayer Aktiengesellschaft Benzodioxinothiophenes, their preparation and use
US7202369B2 (en) * 2002-11-19 2007-04-10 Woon-Phil Baik Processes for preparing of 3,4-alkylenedioxythiophenes and 3,4-dialkoxythiophenes

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100304147A1 (en) * 2007-11-01 2010-12-02 H.C. Starck Clevios Gmbh Method for coating layers which contain nonpolar poly-aromatics
US20090244812A1 (en) * 2008-04-01 2009-10-01 Avx Corporation Hermetically Sealed Capacitor Assembly
US8094434B2 (en) 2008-04-01 2012-01-10 Avx Corporation Hermetically sealed capacitor assembly
US8576544B2 (en) 2008-04-01 2013-11-05 Avx Corporation Hermetically sealed capacitor assembly
US8194395B2 (en) 2009-10-08 2012-06-05 Avx Corporation Hermetically sealed capacitor assembly
US8780530B2 (en) 2009-10-08 2014-07-15 Avx Corporation Hermetically sealed capacitor assembly
US8279584B2 (en) 2010-08-12 2012-10-02 Avx Corporation Solid electrolytic capacitor assembly
US9224541B2 (en) 2010-11-01 2015-12-29 Avx Corporation Solid electrolytic capacitor for use in high voltage and high temperature applications
US8824122B2 (en) 2010-11-01 2014-09-02 Avx Corporation Solid electrolytic capacitor for use in high voltage and high temperature applications
US8848342B2 (en) 2010-11-29 2014-09-30 Avx Corporation Multi-layered conductive polymer coatings for use in high voltage solid electrolytic capacitors
US8493713B2 (en) 2010-12-14 2013-07-23 Avx Corporation Conductive coating for use in electrolytic capacitors
US8576543B2 (en) 2010-12-14 2013-11-05 Avx Corporation Solid electrolytic capacitor containing a poly(3,4-ethylenedioxythiophene) quaternary onium salt
US8451588B2 (en) 2011-03-11 2013-05-28 Avx Corporation Solid electrolytic capacitor containing a conductive coating formed from a colloidal dispersion
US8300387B1 (en) 2011-04-07 2012-10-30 Avx Corporation Hermetically sealed electrolytic capacitor with enhanced mechanical stability
US8947857B2 (en) 2011-04-07 2015-02-03 Avx Corporation Manganese oxide capacitor for use in extreme environments
US10658123B2 (en) 2011-04-07 2020-05-19 Avx Corporation Multi-anode solid electrolytic capacitor assembly
US10014120B2 (en) 2011-04-07 2018-07-03 Avx Corporation Manganese oxide capacitor for use in extreme environments
US8379372B2 (en) 2011-04-07 2013-02-19 Avx Corporation Housing configuration for a solid electrolytic capacitor
US9508492B2 (en) 2011-04-07 2016-11-29 Avx Corporation Manganese oxide capacitor for use in extreme environments
US9767964B2 (en) 2011-04-07 2017-09-19 Avx Corporation Multi-anode solid electrolytic capacitor assembly
US9053854B2 (en) 2012-03-01 2015-06-09 Avx Corporation Ultrahigh voltage solid electrolytic capacitor
US9218913B2 (en) 2012-03-16 2015-12-22 Avx Corporation Wet capacitor cathode containing an alkyl-substituted poly(3,4-ethylenedioxythiophene)
US8971019B2 (en) 2012-03-16 2015-03-03 Avx Corporation Wet capacitor cathode containing an alkyl-substituted poly(3,4-ethylenedioxythiophene)
US9214285B2 (en) 2012-04-11 2015-12-15 Avx Corporation Solid electrolytic capacitor with enhanced mechanical stability under extreme conditions
US9865401B2 (en) 2012-08-30 2018-01-09 Avx Corporation Method for manufacturing solid electrolytic capacitor, and solid electrolytic capacitor
US9324503B2 (en) 2013-03-15 2016-04-26 Avx Corporation Solid electrolytic capacitor
US9472350B2 (en) 2013-05-13 2016-10-18 Avx Corporation Solid electrolytic capacitor containing a multi-layered adhesion coating
US9892862B2 (en) 2013-05-13 2018-02-13 Avx Corporation Solid electrolytic capacitor containing a pre-coat layer
US9824826B2 (en) 2013-05-13 2017-11-21 Avx Corporation Solid electrolytic capacitor containing conductive polymer particles
US10297393B2 (en) 2015-03-13 2019-05-21 Avx Corporation Ultrahigh voltage capacitor assembly
US10014108B2 (en) 2015-03-13 2018-07-03 Avx Corporation Low profile multi-anode assembly
US9928963B2 (en) 2015-03-13 2018-03-27 Avx Corporation Thermally conductive encapsulant material for a capacitor assembly
US9754730B2 (en) 2015-03-13 2017-09-05 Avx Corporation Low profile multi-anode assembly in cylindrical housing
US10431389B2 (en) 2016-11-14 2019-10-01 Avx Corporation Solid electrolytic capacitor for high voltage environments
US11081288B1 (en) 2018-08-10 2021-08-03 Avx Corporation Solid electrolytic capacitor having a reduced anomalous charging characteristic
US11380492B1 (en) 2018-12-11 2022-07-05 KYOCERA AVX Components Corporation Solid electrolytic capacitor
US11756742B1 (en) 2019-12-10 2023-09-12 KYOCERA AVX Components Corporation Tantalum capacitor with improved leakage current stability at high temperatures
US11763998B1 (en) 2020-06-03 2023-09-19 KYOCERA AVX Components Corporation Solid electrolytic capacitor

Also Published As

Publication number Publication date
CN1616451A (zh) 2005-05-18
CA2482113A1 (en) 2005-03-23
ES2283917T3 (es) 2007-11-01
EP1518859B1 (de) 2007-03-07
EP1518859A1 (de) 2005-03-30
TW200526617A (en) 2005-08-16
US7994345B2 (en) 2011-08-09
US20090318710A1 (en) 2009-12-24
DE10343873A1 (de) 2005-04-21
JP4843207B2 (ja) 2011-12-21
PT1518859E (pt) 2007-05-31
KR20050030118A (ko) 2005-03-29
MXPA04009161A (es) 2005-04-05
DK1518859T3 (da) 2007-05-07
TWI330182B (en) 2010-09-11
DE502004003113D1 (de) 2007-04-19
RU2004127972A (ru) 2006-03-10
ATE356132T1 (de) 2007-03-15
JP2005097305A (ja) 2005-04-14
CN1616451B (zh) 2011-06-15
RU2379310C2 (ru) 2010-01-20

Similar Documents

Publication Publication Date Title
US7994345B2 (en) Process for the purification of thiophenes
US20220243008A1 (en) Thermoplastic resin, method for manufacturing same, and optical lens
RU2567627C2 (ru) Растворимые сопряженные электрохромные полимеры с чередованием донорных и акцепторных звеньев
US11107996B2 (en) Organic thin film transistor, organic semiconductor film, compound, organic thin film transistor-forming composition, and method of manufacturing organic thin film transistor
KR20140094586A (ko) 공역 융합 티오펜, 공역 융합 티오펜을 제조하는 방법, 및 이의 용도
KR20140090223A (ko) 융합 티오펜, 융합 티오펜의 제조방법, 및 이의 용도
JP5187737B2 (ja) 電界効果トランジスタ、その製造方法及びそれに用いる化合物、並びに半導体デバイス作製用インク
US20130146858A1 (en) SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
EP1778695B1 (en) POLYMERS OF THIENO[2,3-b]THIOPHENE
KR102518462B1 (ko) 고품질 폴리이미드 수지용 2,2'-비스(트리플루오로메틸)-4,4'-디아미노비페닐의 제조 방법
CZ301500B6 (cs) Zpusob prípravy 3,4-alkylendioxothiofenu
US20070142637A1 (en) Process for the preparation of crystalline polymorph of a platelet aggregation inhibitor drug
EP1461341B1 (en) Process for preparing a heteroaromatic compound substituted with one or more ether groups
JP2003301033A (ja) ウレタン含有側基を有するアルキレンジオキシチオフェン及びポリ(アルキレンジオキシチオフェン)、該チオフェンの製造のための方法及び出発化合物、該チオフェンを用いて得られる架橋生成物並びに新規化合物及び架橋生成物の使用
HK1078081A (en) Process for the purification of thiophenes
EP3101704B1 (en) Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor devices, material for organic transistors, coating solution for non-light-emitting organic semiconductor devices, and organic semiconductor film for non-light-emitting organic semiconductor devices
US12358926B2 (en) Compound and application thereof
US20250282910A1 (en) Thermoplastic resin, method for manufacturing same, and optical lens
JP2003509545A (ja) ポリ(アリーレンスルフィド)ポリマーおよびオリゴマー・ストリームからの極性有機化合物およびモディファイアー化合物のメタノール抽出
FR2852320A1 (fr) Nouveaux polymeres a base de nouveaux monomeres de types bithiophene, leur procede de preparation, et leurs applications
KR20020068526A (ko) 신규한 티오펜 및 상기 티오펜의 중합 방법
WO2015097078A2 (en) Small molecule heteroacenes as semiconductors

Legal Events

Date Code Title Description
AS Assignment

Owner name: H.C. STARCK GMBH, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRASSAT, LUTZ;KIRCHMEYER, STEPHAN;REEL/FRAME:016062/0027

Effective date: 20041122

AS Assignment

Owner name: H.C. STARCK GMBH, GERMANY

Free format text: MERGER;ASSIGNOR:H.C. STARCK GMBH & CO. KG;REEL/FRAME:019695/0519

Effective date: 20070607

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION