US20030197922A1 - Catadioptric projection system for 157 nm lithography - Google Patents

Catadioptric projection system for 157 nm lithography Download PDF

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US20030197922A1
US20030197922A1 US10/444,897 US44489703A US2003197922A1 US 20030197922 A1 US20030197922 A1 US 20030197922A1 US 44489703 A US44489703 A US 44489703A US 2003197922 A1 US2003197922 A1 US 2003197922A1
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Prior art keywords
objective
group
optical group
optical
image
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US10/444,897
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Russell Hudyma
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Priority to US10/444,897 priority Critical patent/US20030197922A1/en
Assigned to CARL ZEISS SMT AG reassignment CARL ZEISS SMT AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUDYMA, RUSSELL
Publication of US20030197922A1 publication Critical patent/US20030197922A1/en
Priority to US10/771,986 priority patent/US7237915B2/en
Priority to US11/757,760 priority patent/US7508581B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/0844—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Definitions

  • the invention relates to projection systems for photolithography, and particularly to catadioptric systems including first and second optical imaging groups for 157 nm lithography.
  • FIG. 3 of the '528 application shows a system having six minors and three lenses.
  • the optical surfaces are generally symmetric to a common axis, and the object plane and the image plane are situated on this same axis upstream and downstream of the objective, respectively.
  • the system of FIG. 2 therein has a numerical aperture of only 0.55 and that of FIG. 3 therein only 0.6.
  • FIG. 3 are cut off sections of a bodies of revolution, yielding mounting and adjustment face difficulties. Also, the lenses shown in FIG. 3 serve only as correcting elements having minor effect. In addition, the most imageward (or optically closest to the image plane) mirror described in the '528 application is concave. It is desired to have an objective with a higher numerical aperture, and which is constructed for easier mounting and adjustment.
  • catadioptric optical systems have several advantages, especially in a step and scan configuration, and that it is desired to develop such systems for wavelengths below 365 nm.
  • One catadioptric system concept relates to a Dyson-type arrangement used in conjunction with a beam splitter to provide ray clearance and unfold the system to provide for parallel scanning (see, e.g., U.S. Pat. Nos. 5,537,260, 5,742,436 and 5,805,357, which are incorporated by reference).
  • WO 01/51 979 A (U.S. ser. Nos. 60/176,190 and 09/761,5762) and WO 01/55767 A (U.S. ser. No. 60/176,190 and 09/759,806—all commonly owned and published after the priority date of this application—show similar coaxial catadioptric objectives with 4 mirrors or more.
  • EP 1 069 448 A1 published after the priority date of this application shows a coaxial catadioptric objective with two curved mirrors and a real, intermediate image located besides the primary mirror.
  • a photolithography reduction projection catadioptric objective including a first optical group including an even number of at least four mirrors, and a second at least substantially dioptric optical group more imageward than the first optical group including a number of lenses for providing image reduction.
  • the first optical group provides compensative axial color correction for the second optical group according to claim 1.
  • Other variations and preferred embodiments are subject of claims 2 to 26.
  • a preferred embodiment according to claim 11 is a photolithographic reduction projection catadioptric objective including a first optical group including an even number of at least six mirrors, and a second at least substantially dioptric optical group more imageward than the first optical group including a number of lenses for providing image reduction. This increased number of mirrors gives more degrees of freedom to the correction and simplifies the design for stressed qualities.
  • FIG. 1 shows the lens section of a projection objective for 157 nm photolithography according to a first preferred embodiment.
  • FIG. 2 shows the lens section of a second preferred embodiment.
  • a catadioptric projection system is schematically shown at FIG. 1 and includes two distinct optical groups G 1 and G 2 .
  • Group G 1 is a catadioptric group including mirrors M 1 -M 6 and lenses E 1 -E 3 , as shown in FIG. 1.
  • An object or mask plane Ob is disposed to the left of group G 1 in FIG. 1 or optically before group G 1 .
  • Group G 2 is disposed optically after group G 1 and to the right of group G 1 in FIG. 1.
  • An image or wafer plane Im is disposed optically after group G 2 and to the right of group G 2 in FIG. 1.
  • Group G 1 functions by correcting field aberrations and providing a conjugate stop position for correction of axial chromatic aberration.
  • Group G 2 is a dioptric group including lens elements E 4 -E 13 , as also shown in FIG. 1.
  • Group G 2 lies aft of G 1 , or optically nearer the image plane of the system, enabling the system to achieve numerical apertures in excess of 0.65, 0.70 and even 0.75.
  • This catadioptric system achieves a high numerical aperture preferably using no beamsplitters nor fold mirrors. The description herein examines the performance of the preferred system of FIG. 1.
  • group G 1 including 6 mirrors and 3 lens elements and group G 2 including 10 individual lens elements.
  • the design is purely coaxial with a single common centerline (axis of symmetry) using an off-axis field to achieve the necessary ray clearance so that the mask and wafer planes are parallel,
  • Group G 1 forms a virtual image V 1 located behind mirror M 6 at a reduction of ⁇ 0.8 ⁇ .
  • Group G 2 takes this virtual image and forms a usable real image at the wafer.
  • Group G 2 takes this virtual image and forms a usable real image at the wafer.
  • Group G 2 operates at a reduction of about 0.25 ⁇ , allowing the system to achieve a desired reduction of 0.20 ⁇ .
  • Table 2 A complete optical prescription is found in Table 2, below, describing the optical surfaces in Code V format.
  • the aperture stop AS that lies in group G 2 has a conjugate position located within group G 1 preferably at, and alternatively near, mirror M 2 .
  • strong negative lenses E 2 /B 3 are used in a double-pass configuration for inducing overcorrected (positive) axial chromatic aberration used to balance or correct an undercorrected (negative) axial chromatic aberration created by the strong positive optical power of group G 2 .
  • FIG. 1 With regard to lateral chromatic aberration, FIG.
  • lateral chromatic aberration of a few parts per million (ppm) may be within tolerance within group G 2 and can be corrected using slight asymmetry of the chief ray near the conjugate stop position at mirror M 2 .
  • the monochromatic aberrations are corrected in such a way to leave the lens elements within G 2 “unstressed.”
  • the term “unstressed” is used to signify the fact that no steep ray bendings are used within G 2 to promote high-order aberration correction. Both the chief and marginal rays exhibit this behavior.
  • the fact that group G 2 is “unstressed” is advantageous when manufacturing and assembly tolerances are considered in detail.
  • the system of FIG. 1 includes 6 mirrors and 13 lens elements in a coaxial configuration all coaxial to axis A.
  • the design utilizes an off-axis field to enable ray clearance and allow the mask and wafer planes to be parallel.
  • Lens element E 1 of group G 1 is used to make the chief ray telecentric at the mask plane.
  • Group G 1 forms a virtual image behind mirror M 6 , which is relayed by the dioptric group G 2 to form a final image at the wafer plane.
  • Performance Summary Parameter Performance Wavelength 157 Spectral band (pm) 0.5 Reduction ratio (R) 0.20 Field size (mm) 22 ⁇ 7 rectangular Numerical aperture 0.75 (NA) RMS wavefront error 0.013 ⁇ (waves) Distortion (nm) ⁇ 1 nm PAC (ppm) 39.0 ppm PLC (ppm) 0.0 ppm Total track (mm) 1250 distance Ob - Im Front working 25.0 distance (mm) Back working distance 10.0 (mm) Blank mass (kg, 39.0 estimated)
  • Table 1 shows that the monochromatic RMS wavefront error, distortion, and chromatic aberrations PAC—paraxial axial color aberration and PLC—paraxial local color aberration are reduced small residual values as desired for precision lithographic projection systems. Further, the system of FIG. 1 may be confined within a volume that is similar to or smaller than conventional systems, meaning that the footprint of legacy tools can be maintained, if desired. TABLE 2 Optical Design Prescription for the System of FIG.
  • the catadioptric projection system is schematically shown at FIG. 2 and includes two distinct optical groups G 1 ′ and G 2 ′.
  • Group G 1 ′ is a catadioptric group including mirrors M 1 ′-M 6 ′ and lenses E 1 ′-E 3 ′, as shown in FIG. 2.
  • An object or mask plane Ob′ is disposed to the left of group G 1 ′ in FIG. 2 or optically before Group G 1 ′.
  • Group G 2 ′ is disposed optically after group G 1 ′ and to the right of G 1 ′ in FIG. 2.
  • An image or wafer plane Im′ is disposed optically after group G 2 ′ and to the right of group G 2 ′ in FIG. 2.
  • Group G 1 ′ functions by correcting field aberrations and providing a conjugate stop CS′ position for correction of axial chromatic aberration.
  • Group G 2 ′ is a dioptric group including lens elements E 4 ′-E 13 ′, as also shown in FIG. 2.
  • Group G 2 ′ lies aft of G 1 ′, or optically nearer the image plane Im′ of the system, enabling the system to achieve numerical apertures in excess of 0.65, 0.70 and even 0.75.
  • This catadioptric system achieves a high numerical aperture preferably using no beamsplitters nor fold mirrors. The description herein examines the performance of the second preferred embodiment of FIG. 2.
  • the first embodiment of FIG. 1 features independent correction of lateral chromatic aberration in the individual imaging groups. This feature influenced the optical construction in terms of stop position(s), element powers and element shapes.
  • the independent lateral color correction feature is not included and a balance of lateral color is struck between the fore and aft groups.
  • Group G 1 ′ is a catadioptric group that functions by correcting field aberrations and providing a conjugate stop position to correct axial chromatic aberration.
  • Group G 2 ′ is a dioptric group that lies aft of G 1 ′ enabling the system to achieve numerical apertures (NA) in excess of 0.65, and preferably at least 0.70, or 0.75, or even 0.80 or higher.
  • NA numerical apertures
  • a system in accord with the preferred embodiment may be configured to exhibit a NA of 0.79 while advantageously having a RMS wavefront error of only 0.0115 ⁇ . That is, the system may be configured with a NA above 0.75, while maintaining the RMS wavefront error below 0.02 ⁇ , and even below 0.015 ⁇ .
  • Group G 1 ′ includes an even number of at least four mirrors, and preferably has six mirrors M 1 ′-M 6 ′.
  • Group G 1 ′ further preferably includes three lens elements E 1 ′-E 3 ′.
  • Group G 2 ′ includes a lens barrel of ten individual lens elements E 4 ′-E 13 ′, as shown in FIG. 2.
  • the design is coaxial having a single common centerline, respectively, of the system of two optical groups G 1 ′ and G 2 ′ shown in FIG. 2.
  • the design uses an off-axis field to achieve ray clearances in group G 1 ′ Since Group G 2 ′ is dioptric, ray clearance problems are eliminated enabling a system with a high numerical aperture.
  • the concept also provides for unlimited scanning of the mask and wafer in a parallel configuration.
  • Group G 1 ′ of FIG. 2 forms a minified, virtual image V 1 ′ located behind mirror M 6 ′ at a reduction of ⁇ 0.8 ⁇ .
  • Group G 2 ′ relays this virtual image V 1 ′ to form a usable real image Im at the wafer.
  • Group G 2 ′ operates at a reduction of about 0.25 ⁇ . allowing the system to achieve a reduction of 0.20 ⁇ .
  • a complete optical prescription is found in Table 5 below, describing the optical surfaces in Code V format.
  • the aperture stop AS′ that lies in group G 2 ′ has a conjugate stop CS′ position in group G 1 ′ between mirror M 1 ′ and M 2 ′.
  • This chief ray height when combined with the sign of the marginal ray and the negative power of the E 2 ′/E 3 ′ pair, provides for a lateral chromatic aberration contribution that substantially cancels the lateral color contribution from group G 2 ′.
  • this specific embodiment has a paraxial lateral color contribution from E 2 ′/E 3 ′ of ⁇ 35 ppm, whereas the paraxial lateral color contribution from Group G 2 ′ is ⁇ 35 ppm, resulting in an advantageous sum total of approximately 0 ppm.
  • the principle result is that the power distribution and shapes of the lenses in group G 2 ′ take on a very advantageous form.
  • FIG. 2 also specifically shows raytrace layout of the preferred embodiment.
  • the system shown includes six mirrors M 1 ′-M 6 ′ and thirteen lens elements E 1 ′-E 3 ′ in a coaxial configuration.
  • the design utilizes an off-axis field (ring field, rectangular slit field or the like) to enable ray clearance and allow the mask and wafer planes Ob′, Im′ to be parallel.
  • Element E 1 is preferably used advantageously to make the chief ray telecentric at the mask plane Ob′, as described in more detail below.
  • Group G 1 ′ forms a virtual image V 1 ′ behind mirror M 6 ′, which is relayed by dioptric group G 2 ′ to form the final image at the wafer plane Im′.
  • a real intermediate image Im′ is also formed between mirrors M 4 ′ and M 5 ′ of group G 1 ′, as shown in FIG. 2.
  • negative lenses E 2 ′/E 3 ′ are used in a double-pass configuration to induce overcorrected (positive) axial chromatic aberration used to correct undercorrected (negative) axial chromatic aberration created by the strong positive optical power of group G 2 ′.
  • the monochromatic aberrations are corrected via a balance between groups G 1 ′ and G 2 ′. In addition, this is done in such a manner as to leave the lens elements E 4 ′-E 13 ′ in group G 2 ′ “unstressed” as in the first embodiment.
  • Lens element E 1 ′ provides for the telecentric condition at the plane Ob′ of the mask. It is advantageous to have positive optical power near the mask to reduce the chief ray height on mirror M 1 ′. Lens element E 1 ′ appears to lie in conflict with the substrate of mirror M 2 ′. To achieve this concept, it is preferred that only a small off-axis section of E 1 ′ be used. This means that pieces of a complete E 1 ′ could be sectioned to yield pieces for multiple projection systems, further reducing the required blank mass of a single system.
  • lens E 1 ′ Another option to resolve the apparent conflict between lens E 1 ′ and the substrate of mirror M 2 ′ is to place lens E 1 ′ between mirrors M 1 ′ and M 2 ′, such as somewhere close to the group of lens elements E 2 ′/E 3 ′. In this Manner, the complete lens would be used.
  • Table 3 summarizes design performance of the system of the preferred embodiment.
  • the distortion is less than 2 nm at all field points, and the lateral color PLC is corrected to better than 1 nm.
  • the axial color PAC is also small and could be reduced further if desired and as understood by those spilled in the art.
  • This design approaches an advantageous “zero aberration” condition.
  • TABLE 4 Composite RMS wavefront error vs. NA NA RMS wavefront error 0.75 0.0058 ⁇ 0.76 0.0061 ⁇ 0.77 0.0064 ⁇ 0.78 0.0075 ⁇ 0.79 0.0115 ⁇ 0.80 0.0207 ⁇ 0.81 0.0383 ⁇ 0.82 0.0680 ⁇
  • the numerical aperture may be advantageously scaled in accord with the preferred embodiment.
  • Table 3 illustrates how the design of FIG. 1 may be scaled as the numerical aperture is increased. A local minimum that does not scale well with aperture is preferably avoided, since otherwise to achieve increased numerical aperture would involve additional redesign.
  • the aperture scaling of the preferred embodiment illustrated at FIG. 1 is presented in Table 3, above. From a qualitative standpoint, the table reveals that the preferred embodiment herein scales well with numerical aperture. For example, the composite RMS only grows by 0.005 ⁇ from 0.0058 ⁇ to 0.0115 ⁇ as the NA is scaled from 0.75 to 0.79. The results indicate that the system of the preferred embodiment my be scaled to a numerical aperture larger than 0.80.
  • optical design description provided herein demonstrates an advantageous catadioptric projection system for DUV or VUV photolithography. While the preferred embodiment has been designed for use in an 157 nm tool, the basic concept has no wavelength limitations, either shorter or longer, providing a suitable refractive material exists.
  • the preferred optical system is catadioptric and includes two optical groups, group G 1 and group G 2 , configured such that group G 1 presents a reduced, virtual image to group G 2 .
  • the function of group G 2 is to relay this virtual image to a real image located at the plane of the wafer.
  • Group G 1 preferably includes an even number of at least four and preferably 4 or 6 mirrors in combination with lens elements whose primary function is to provide telecentricity at the mask and enable correction of axial chromatic aberration.
  • an image of the aperture stop is located in close proximity to mirror M 2 .
  • Group G 2 is preferably entirely dioptric providing most of the system reduction and a corresponding high numerical aperture (in excess of 0.65, 0.70 and even 0.75) at the image. This group G 2 also makes the final image telecentric in image space. Group G 1 functions to correct high-order field aberrations, advantageously allowing a substantial relaxation of the lens elements found in group G 2 . Both group G 1 and group G 2 make use of aspheric surfaces as set forth in the Table 2. The same holds for the second preferred embodiment.
  • the preferred optical design herein is co-axial, wherein each of the optical elements is rotationally symmetric about a common centerline.
  • the preferred system advantageously does not utilize fold mirrors, prisms, or beamsplitters to fold the opto-mechanical axis. This enables a compact configuration and eliminates substantial bulk refractive material that may be difficult to procure in a timely manner.
  • the preferred optical system herein achieves mask and wafer planes that are parallel, enabling unlimited scanning in a step/scan lithographic configuration.
  • Correction of chromatic aberration is achieved preferably using a single optical material in the catadioptric configuration described herein. Lateral chromatic aberration is at least substantially self-corrected within group G 2 , using a balance of optical power on either side of a primary aperture stop located within group G 2 . Correction of axial chromatic aberration is enabled using a negative lens group E 2 /E 3 located at mirror M 2 in group G 1 , providing an axial chromatic aberration contribution that is nearly equal in magnitude and opposite in sign to the chromatic aberration generated by G 2 . This high level of axial chromatic aberration correction relaxes the need for a high spectral purity laser exposure source with linewidths on the order of 0.1 to 0.2 ⁇ m.
  • the preferred system is an imaging system for photolithographic applications using 157 nm, 193 nm or 248 nm or other exposure radiation including first and second optical groups, or groups G 1 and G 2 .
  • the first optical group i.e., group G 1
  • group G 1 is either a catoptric or catadioptric group including preferably six mirrors.
  • Group G 1 preferably also includes one or more lens elements, e.g., to make the chief ray telecentric at a mask plane and to correct axial chromatic aberration.
  • the second optical group, or Group G 2 is a dioptric group of several lens elements for reducing and projecting an image to a wafer plane.
  • Group G 2 is preferably a relaxed group such that optical paths of projected rays are smoothly redirected at each lens element, e.g., less than 45° and preferably less than 30°, and still more preferably less than 20°, as shown in FIG. 1.
  • This preferred system is contradistinct form a Dyson-type system which has one reflective component performing reduction of the image.
  • the preferred system has a dioptric second group (group G 2 ) performing reduction, while the catoptric or catadioptric first group (group G 1 ) forms a virtual image for reduction by Group G 2 and provides aberration compensation for group G 2 .
  • the first and second groups, or groups G 1 and G 2 , respectively, of the preferred imaging system herein enable parallel scanning and a symmetric, coaxial optical design. Stops are located preferably at or near the second mirror M 2 of Group G 1 and within Group G 2 . The first stop may be alternatively moved off of the second mirror to enhance aberration correction.
  • Group G 2 is preferably independently corrected for lateral color, while the refractive components of the first group compensate those of the second group far longitudinal color.
  • 15 or fewer total lens elements are preferably included in the system, group G 2 preferably having 10 or fewer lens elements.
  • the system of FIG. 1 shows ten lens elements E 4 -E 13 in group G 2 and three additional lens elements in group G 1 .
  • the sixth or final mirror in group G 1 may be preferably a convex mirror and preferably a virtual image is formed behind the sixth mirror.
  • Group G 2 forms a real image at the wafer plane.
  • all of the refractive elements of the imaging system are preferably made from a VUV transparent material such as CaF2.
  • a VUV transparent material such as CaF2.
  • materials such materials as BaF2, SrF2, MgF2 or LiF may be used.
US10/444,897 2000-01-14 2003-05-23 Catadioptric projection system for 157 nm lithography Abandoned US20030197922A1 (en)

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US10/444,897 US20030197922A1 (en) 2000-11-28 2003-05-23 Catadioptric projection system for 157 nm lithography
US10/771,986 US7237915B2 (en) 2000-01-14 2004-02-03 Catadioptric projection system for 157 nm lithography
US11/757,760 US7508581B2 (en) 2000-01-14 2007-06-04 Catadioptric projection system for 157 nm lithography

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US25350800P 2000-11-28 2000-11-28
US25099600P 2000-12-04 2000-12-04
PCT/EP2001/013851 WO2002044786A2 (en) 2000-11-28 2001-11-28 Catadioptric projection system for 157 nm lithography
US10/444,897 US20030197922A1 (en) 2000-11-28 2003-05-23 Catadioptric projection system for 157 nm lithography

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US09/761,562 Continuation-In-Part US6636350B2 (en) 2000-01-14 2001-01-16 Microlithographic reduction projection catadioptric objective
PCT/EP2001/013851 Continuation WO2002044786A2 (en) 2000-01-14 2001-11-28 Catadioptric projection system for 157 nm lithography

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US20040130806A1 (en) * 2000-10-23 2004-07-08 Tomowaki Takahashi Catadioptric system and exposure device having this system
US20050088761A1 (en) * 2000-02-16 2005-04-28 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus
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US20070019305A1 (en) * 2005-07-01 2007-01-25 Wilhelm Ulrich Method for correcting a lithography projection objective, and such a projection objective
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US20070153398A1 (en) * 2000-01-14 2007-07-05 Carl Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US20070195423A1 (en) * 2004-01-14 2007-08-23 Vladimir Kamenov Method of determining lens materials for a projection exposure apparatus
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US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
US7672047B2 (en) 2004-01-14 2010-03-02 Carl Zeiss Smt Ag Catadioptric projection objective
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US8199400B2 (en) 2004-01-14 2012-06-12 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8390784B2 (en) 2006-08-14 2013-03-05 Carl Zeiss Smt Gmbh Catadioptric projection objective with pupil mirror, projection exposure apparatus and projection exposure method
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method

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WO2002044786A3 (en) 2002-08-29

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