US20020051380A1 - Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system - Google Patents

Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system Download PDF

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Publication number
US20020051380A1
US20020051380A1 US09/947,355 US94735501A US2002051380A1 US 20020051380 A1 US20020051380 A1 US 20020051380A1 US 94735501 A US94735501 A US 94735501A US 2002051380 A1 US2002051380 A1 US 2002051380A1
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United States
Prior art keywords
layer
magnetic
magnetization
magnetoresistance effect
effect element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/947,355
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English (en)
Inventor
Yuuzo Kamiguchi
Hiromi Yuasa
Tomohiko Nagata
Hiroaki Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAMIGUCHI, YUUZO, NAGATA, TOMOHIKO, YODA, HIROAKI, YUASA, HIROMI
Publication of US20020051380A1 publication Critical patent/US20020051380A1/en
Priority to US10/970,278 priority Critical patent/US7359162B2/en
Priority to US11/984,865 priority patent/US7542248B2/en
Priority to US12/042,166 priority patent/US7483245B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Definitions

  • the spin-valve film can rotate the magnetization of the free layer, i.e., the ferromagnetic layer F. Therefore, the spin-valve film can be sensitized, so that it is suitable for an MR element for use in an MR head.
  • At least one of the ferromagnetic layers included in the stacked body may include a layer of a first ferromagnetic material, and a layer of a second ferromagnetic material different from the first ferromagnetic material.
  • the ferromagnetic layers included in the stacked body may contain any one of an iron (Fe) base alloy, a cobalt (Co) base alloy and a nickel (Ni) base alloy, and the non-magnetic layers included in the stacked body may contain any one of gold (Au), silver (Ag), copper (Cu), rhodium (Rh), ruthenium (Ru), manganese (Mn), chromium (Cr), rhenium (Re), osmium (Os), iridium (Ir), and an alloy containing any one of gold, silver, copper, rhodium, ruthenium, manganese, chromium, rhenium, osmium, and iridium.
  • the non-magnetic intermediate layer may have a stacked body wherein two kinds or more of non-magnetic layers are stacked.
  • FIG. 3 is a conceptual drawing showing a cross-sectional structure of a magnetoresistance effect element wherein ferromagnetic layers FF and PF are formed in the form of islands;
  • FIG. 8A is a conceptual drawing showing modulation of potential in the spin-valve element of FIG. 7 when the magnetization of the pinned layer is parallel to the magnetization of the free layer;
  • FIG. 8B is a conceptual drawing showing modulation of potential in the spin-valve element of FIG. 7 when the magnetization of the pinned layer is anti-parallel to the magnetization of the free layer;
  • FIG. 9 is a conceptual drawing showing a cross-sectional structure of a magnetoresistance effect element wherein a non-magnetic layer has a stacked structure
  • the magnetization of the pinned layer P and the magnetization of the free layer F are operated so as to be integrated, the magnetization can be controlled only by the magnetization fixing of the pinned layer P and the control of the magnetization of one free layer F.
  • the element is used for a reading sensor, such as a magnetic head, it is possible to realize a magnetic head wherein Barkhausen noises are suppressed.
  • the stacked structure of ferromagnetic layer/non-magnetic layer is preferably flat and continuous.
  • the pin holes H are formed in the non-magnetic layers FN and PN as shown in FIG. 2 and if adjacent ferromagnetic layers FF and PF are connected directly to each other in that portion.
  • the ferromagnetic layer FF 2 of a magnetic material having excellent magnetically soft characteristics such as CoFe or NiFe, which is ferromagnetically coupled as a ferromagnetic layer.
  • the wave number vector of electrons flowing in a direction perpendicular to the plane of the film is perturbed in accordance with modulation of band potential.
  • the perturbed wave number varies in accordance with the period of the multilayered structure. Therefore, the stacking periods in the pinned layer P and free layer F are changed as illustrated in FIG. 7, it is possible to greatly restrict the wave number of electrons capable of passing through both layers.
  • the screen effect itself has the spin dependence effect, it is possible to hold a high spin dependency while maintaining a low transmission probability of electrons as a whole. For that reason, if the stacking periods in the pinned layer P and free layer F are intentionally changed, it is possible to form a CPP-SV capable of realizing a high rate of change in MR while maintaining a higher resistance.
  • the material of the non-magnetic intermediate layer S is preferably a material, in which the mean free path of conductive electrons is long, such as Cu, Au or Ag.
  • a material in which the mean free path of conductive electrons is long, such as Cu, Au or Ag.
  • electrons can varistically conduct from the ferromagnetic layer forming an electrode to the ferromagnetic layer F, so that it is possible to more effectively utilize the scattering effect of electrons depending on spin which is caused by the ferromagnetic material.
  • the non-magnetic intermediate layer S may be formed of an alloy of the above described three elements. In that case, the composition is preferably adjusted so that the crystal lattice constant in the stacked structure can be adjusted to be the optimum value.
  • FIG. 10 is a conceptual drawing showing a spin-valve element wherein a non-magnetic intermediate layer S is multilayered. That is, in the spin-valve element shown in this figure, the non-magnetic intermediate layer S has the stacked structure of first non-magnetic layers SN 1 and second non-magnetic layers SN 2 . All of the non-magnetic layers may be formed of a material, such as Cu, Au or Ag. In this case, conductive electrons can also be perturbed by the stacking period of the stacked structure of non-magnetic layer/non-magnetic layer.
  • the material of the antiferromagnetic layer A is preferably a metallic antiferromagnetic material having excellent magnetization fixing characteristics.
  • an antiferromagnetic material such as PtMn, NiMn, FeMn or IrMn, may be used.
  • the thickness of the antiferromagnetic layer A is preferably as thin as possible from the standpoint of electric characteristics. However, if the antiferromagnetic layer A is too thin, the magnetization fixing characteristics deteriorate, so that it is required to select such a thickness that the blocking temperature does not decrease. For that reason, the thickness is preferably 5 nm or more.
  • FIG. 13 is a conceptual drawing showing a cross-sectional structure of a magnetoresistance effect element according to the second embodiment of the present invention. That is, the magnetoresistance effect element according to the second embodiment comprises an antiferromagnetic layer A, a first magnetic material P, a non-magnetic intermediate layer S, a second magnetic material F and a high conductive layer G, which are stacked on a predetermined substrate (not shown) in that order.
  • a Cu bottom electrode having a thickness of 500 nm was stacked on a thermally oxidized silicon (Si) substrate by the sputtering method, and the Cu bottom electrode was formed so as to have a stripe shape having a width of 9 ⁇ m by the photolithography. Then, a CPP-SV 3 ⁇ m square was deposited thereon.
  • the construction of the film was as follows.
  • the resistance was 8 ⁇ , and it was possible to obtain a rate of change in resistance of 40%. Thus, it was possible to obtain an amount of change in resistance of 3.2 ⁇ .
  • the pinned layer P was suitably magnetization-fixed by the antiferromagnetic layer A and that the magnetization of the stacked structure constituting the pinned layer P moved integrally.
  • the contact of the electrode of the magnetoresistance effect element 104 is formed so as to be limited to a region corresponding to a recording track width W shown in the figure.
US09/947,355 2000-09-11 2001-09-07 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system Abandoned US20020051380A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/970,278 US7359162B2 (en) 2000-09-11 2004-10-22 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US11/984,865 US7542248B2 (en) 2000-09-11 2007-11-23 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US12/042,166 US7483245B2 (en) 2000-09-11 2008-03-04 Magnetoresistance effect element, and magnetic head and magnetic recording and/or reproducing system utilizing the magnetoresistance element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000275417A JP3618654B2 (ja) 2000-09-11 2000-09-11 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置
JP2000-275417 2000-09-11

Related Child Applications (1)

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US10/970,278 Continuation US7359162B2 (en) 2000-09-11 2004-10-22 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

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US20020051380A1 true US20020051380A1 (en) 2002-05-02

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US09/947,355 Abandoned US20020051380A1 (en) 2000-09-11 2001-09-07 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US10/970,278 Expired - Fee Related US7359162B2 (en) 2000-09-11 2004-10-22 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US11/984,865 Expired - Fee Related US7542248B2 (en) 2000-09-11 2007-11-23 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US12/042,166 Expired - Fee Related US7483245B2 (en) 2000-09-11 2008-03-04 Magnetoresistance effect element, and magnetic head and magnetic recording and/or reproducing system utilizing the magnetoresistance element

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US10/970,278 Expired - Fee Related US7359162B2 (en) 2000-09-11 2004-10-22 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US11/984,865 Expired - Fee Related US7542248B2 (en) 2000-09-11 2007-11-23 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US12/042,166 Expired - Fee Related US7483245B2 (en) 2000-09-11 2008-03-04 Magnetoresistance effect element, and magnetic head and magnetic recording and/or reproducing system utilizing the magnetoresistance element

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US20020150791A1 (en) * 2001-02-01 2002-10-17 Hiromi Yuasa Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
US20030128483A1 (en) * 2001-10-12 2003-07-10 Nec Corporation Exchange coupling film, magneto-resistance effect device, magnetic head, and magnetic random access memory
US20040048104A1 (en) * 2002-09-09 2004-03-11 Tdk Corporation Exchange-coupled film, spin valve film, thin film magnetic head, magnetic head apparatus, and magnetic recording/reproducing apparatus
US20040169963A1 (en) * 2001-09-19 2004-09-02 Kabushiki Kaisha Toshiba Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
WO2005008799A1 (ja) * 2003-07-18 2005-01-27 Fujitsu Limited Ｃｐｐ磁気抵抗効果素子及びその製造方法、磁気ヘッド、磁気記憶装置
US20050023938A1 (en) * 2003-06-30 2005-02-03 Kabushiki Kaisha Toshiba High-frequency oscillation element, magnetic information recording head, and magnetic storage device
US20050035383A1 (en) * 2003-08-12 2005-02-17 Ha Young-Ki Magnetic tunnel junction and memory device including the same
US20050111145A1 (en) * 2003-10-02 2005-05-26 Kabushiki Kaisha Toshiba Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus
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US20080158737A1 (en) 2008-07-03
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JP2002092826A (ja) 2002-03-29
US20050052788A1 (en) 2005-03-10

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