US11038371B2 - Power supply control device - Google Patents

Power supply control device Download PDF

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Publication number
US11038371B2
US11038371B2 US16/482,928 US201816482928A US11038371B2 US 11038371 B2 US11038371 B2 US 11038371B2 US 201816482928 A US201816482928 A US 201816482928A US 11038371 B2 US11038371 B2 US 11038371B2
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United States
Prior art keywords
semiconductor switches
switches
temperature
power supply
semiconductor
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US16/482,928
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US20190356161A1 (en
Inventor
Keisuke Wakazono
Katsuma TSUKAMOTO
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Sumitomo Wiring Systems Ltd
AutoNetworks Technologies Ltd
Sumitomo Electric Industries Ltd
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Sumitomo Wiring Systems Ltd
AutoNetworks Technologies Ltd
Sumitomo Electric Industries Ltd
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Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., AUTONETWORKS TECHNOLOGIES, LTD., SUMITOMO WIRING SYSTEMS, LTD. reassignment SUMITOMO ELECTRIC INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TSUKAMOTO, Katsuma, WAKAZONO, Keisuke
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0034—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using reverse polarity correcting or protecting circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/007—Regulation of charging or discharging current or voltage
    • H02J7/0071—Regulation of charging or discharging current or voltage with a programmable schedule
    • H02J7/0072—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
    • H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
    • H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
    • H02J9/061—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J2310/00—The network for supplying or distributing electric power characterised by its spatial reach or by the load
    • H02J2310/40—The network being an on-board power network, i.e. within a vehicle
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0063—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with circuits adapted for supplying loads from the battery
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Definitions

  • the present disclosure relates to a power supply control device.
  • Vehicles are provided with power supply control devices that control the supply of power from batteries to loads by switching switches, which are provided on power supply paths from the batteries to the loads, ON or OFF (for example, see JP 2013-236297A).
  • the power supply control device disclosed in JP 2013-236297A includes a switch unit that has two MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) that are connected in parallel and are provided on power supply paths from a battery to a load.
  • MOSFETs Metal-Oxide Semiconductor Field-Effect Transistors
  • the supply of power to the load is controlled by switching these MOSFETs ON or OFF.
  • JP 2013-236297A half-on failures are detected from the voltage between the drains and the sources of the FETs, but with a power source relay circuit that has FETs of which both ends have a power source connected thereto, there is a problem that half-on failures cannot be detected from the voltage between the drains and sources of the FETs.
  • An object of the present disclosure is to provide a power supply control device that can detect a half-on failure even if both ends of a semiconductor switch have a power source connected thereto.
  • a power supply control device includes a plurality of semiconductor switches that are connected in parallel between two power sources and control the supply of power to a load that is connected to the two power sources via the plurality of semiconductor switches, the power supply control device including a temperature detection unit that detects a rise of temperature due to heat that is produced from at least one of the plurality of semiconductor switches, and a switching control unit that executes control that switches the plurality of semiconductor switches from OFF to ON if the temperature detection unit detects a temperature that is at least a threshold temperature.
  • the power supply control device further includes a relay contact that is connected in parallel to the plurality of semiconductor switches, wherein, if the relay contact is OFF, the switching unit executes control that switches the relay contact from OFF to ON if the temperature detection unit detects a temperature that is at least the threshold temperature.
  • control is executed that switches the relay contact from OFF to ON so current can flow through the relay contact, thus avoiding concentration of current in the semiconductor switch in which a half-on failure has occurred. As a result, it is possible to prevent the semiconductor switches from burning out due to an excessive rise in temperature.
  • the power supply control device is the power supply control device wherein the semiconductor switch is an FET, one of the two power sources is connected to a drain of each of the semiconductor switches and the other of the two power sources is connected to a source of each of the semiconductor switches, the power supply control device further comprises a reverse flow detection unit that detects a current that flows from the one power source to the drains of the semiconductor switches, and if at least one of the plurality of semiconductor switches is ON, the switching control unit executes control that switches the at least one of the semiconductor switches to OFF if the reverse flow detection unit has detected the current.
  • the semiconductor switch is an FET
  • one of the two power sources is connected to a drain of each of the semiconductor switches and the other of the two power sources is connected to a source of each of the semiconductor switches
  • the power supply control device further comprises a reverse flow detection unit that detects a current that flows from the one power source to the drains of the semiconductor switches, and if at least one of the plurality of semiconductor switches is ON, the switching control unit executes control that switches
  • a half-on failure can be detected even if both ends of a semiconductor switch have a power source connected thereto.
  • FIG. 1 is a circuit diagram illustrating a power source system according to a first embodiment.
  • FIG. 2 is a block diagram illustrating an internal configuration of a control circuit.
  • FIG. 3 is a flowchart illustrating steps of processing that are executed by the control circuit according to the first embodiment.
  • FIG. 4 is a circuit diagram illustrating the power source system according to a second embodiment.
  • FIG. 5 is a flowchart illustrating steps of processing that are executed by the control circuit according to the second embodiment.
  • a power supply control device includes a plurality of semiconductor switches that are connected in parallel between two power sources and control the supply of power to a load that is connected to the two power sources via the plurality of semiconductor switches, the power supply control device including a temperature detection unit that detects a rise of temperature due to heat that is produced from at least one of the plurality of semiconductor switches, and a switching control unit that executes control that switches the plurality of semiconductor switches from OFF to ON if the temperature detection unit detects a temperature that is at least a threshold temperature.
  • the power supply control device further includes a relay contact that is connected in parallel to the plurality of semiconductor switches, wherein, if the relay contact is OFF, the switching unit executes control that switches the relay contact from OFF to ON if the temperature detection unit detects a temperature that is at least the threshold temperature.
  • control is executed that switches the relay contact from OFF to ON so current can flow through the relay contact, thus avoiding concentration of current in the semiconductor switch in which a half-on failure has occurred. As a result, it is possible to prevent the semiconductor switches from burning out due to an excessive rise in temperature.
  • the power supply control device is the power supply control device wherein the semiconductor switch is an FET, one of the two power sources is connected to a drain of each of the semiconductor switches and the other of the two power sources is connected to a source of each of the semiconductor switches, the power supply control device further comprises a reverse flow detection unit that detects a current that flows from the one power source to the drains of the semiconductor switches, and if at least one of the plurality of semiconductor switches is ON, the switching control unit executes control that switches the at least one of the semiconductor switches to OFF if the reverse flow detection unit has detected the current.
  • the semiconductor switch is an FET
  • one of the two power sources is connected to a drain of each of the semiconductor switches and the other of the two power sources is connected to a source of each of the semiconductor switches
  • the power supply control device further comprises a reverse flow detection unit that detects a current that flows from the one power source to the drains of the semiconductor switches, and if at least one of the plurality of semiconductor switches is ON, the switching control unit executes control that switches
  • FIG. 1 is a circuit diagram illustrating a power source system according to a first embodiment.
  • the power source system according to the first embodiment may be installed in a vehicle for example, and includes a power supply control device 10 , a main battery 21 , an sub auxiliary battery 22 , and loads 31 and 32 .
  • the main battery 21 has a cathode that is connected to the load 31 and the power supply control device 10 , and supplies power to the load 31 as well as supplying power to the load 32 via the power supply control device 10 .
  • the anode of the main battery 21 is grounded.
  • the loads 31 and 32 may be electronic apparatuses such as a starter motor, a vehicle light, a wiper, or an air conditioner.
  • the loads 31 and 32 are configured to operate when power is supplied thereto from the main battery 21 (or the auxiliary battery 22 ), and to stop operating when the supply of power from the main battery 21 (or the auxiliary battery 22 ) stops.
  • a signal indicating whether or not the loads 31 and 32 are operating is input from, for example, a body ECU (Electronic Control Unit) (not shown) to the power supply control device 10 .
  • the power supply control device 10 executes power supply control on the main battery 21 and the auxiliary battery 22 based on the signal that is input from the body ECU, for example.
  • the power supply control device 10 includes semiconductor switches 11 A and 11 B, a drive circuit 12 , a control circuit 13 , a temperature element 14 , an overheating detection circuit 15 , and a reverse flow detection circuit 16 .
  • the semiconductor switches 11 A and 11 B may be, for example, N-channel FETs that are connected in parallel between the main battery 21 and the auxiliary battery 22 .
  • the sources of the semiconductor switches 11 A and 11 B are connected to the cathode of the main battery 21
  • the drains of the semiconductor switches 11 A and 11 B are connected to the cathode of the auxiliary battery 22 .
  • the gates of the semiconductor switches 11 A and 11 B are connected to the drive circuit 12 .
  • the power supply control device 10 includes two semiconductor switches 11 A and 11 B, but it may also include three or more semiconductor switches.
  • the drive circuit 12 switches the semiconductor switches 11 A and 11 B ON or OFF substantially simultaneously by adjusting the voltage value of the gates of the semiconductor switches 11 A and 11 B.
  • a control signal for switching the semiconductor switches 11 A and 11 B ON or OFF is input from the control circuit 13 to the drive circuit 12 .
  • FIG. 2 is a block diagram illustrating an internal configuration of the control circuit 13 .
  • the control circuit 13 may include, for example, a control unit 131 , a storage unit 132 , and an input-output unit 133 , and outputs to the drive circuit 12 a control signal to switch the semiconductor switches 11 A and 11 B ON or OFF.
  • the control unit 131 may include, for example, a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), and the like.
  • the CPU included in the control unit 131 executes a control program, which is stored in advance on the RAM, to control the operation of hardware units included in the control circuit 13 and realize switching control of the semiconductor switches 11 A and 11 B.
  • the control unit 131 outputs a control signal for switching the semiconductor switches 11 A and 11 B ON or OFF through the input-output unit 133 to the drive circuit 12 in order to realize the switching control of the semiconductor switches 11 A and 11 B.
  • the control unit 131 also keeps track of the ON or OFF control state of the semiconductor switches 11 A and 11 B by writing information about the control signal to the RAM for example.
  • the input-output unit 133 includes an interface that connects various circuits.
  • the drive circuit 12 , the overheating detection circuit 15 , and the reverse flow detection circuit 16 are all connected to the input-output unit 133 .
  • the input-output unit 133 obtains detection results that have been output from the overheating detection circuit 15 and the reverse flow detection circuit 16 , and the obtained detection results are then output to the control unit 131 . Also, if the control signal to switch the semiconductor switches 11 A and 11 B ON or OFF is obtained from the control unit 131 , the input-output unit 133 outputs the obtained control signal to the drive circuit 12 .
  • the input-output unit 133 may also include a communication interface that communicates with an apparatus such as a body ECU in accordance with a communication protocol such as CAN (Controller Area Network).
  • the control unit 131 may also obtain, through a communication interface included in the input-output unit 133 , a signal from an ECU or the like instructing the loads 31 and 32 to start or stop operating.
  • the overheating detection circuit 15 uses the temperature element 14 to detect a temperature rise caused by least one of the semiconductor switches 11 A and 11 B producing heat.
  • the temperature element 14 is a thermal sensor such as a thermistor whose resistance value changes in accordance with ambient temperature, and is arranged in the vicinity of the two semiconductor switches 11 A and 11 B. With the present embodiment, it is sufficient that the overheating detection circuit 15 can detect temperature rising in accordance with heat being produced when a half-on failure occurs in the semiconductor switch 11 A (or the semiconductor switch 11 B), and the temperature element 14 is mounted on the same substrate on which, for example, the two semiconductor switches 11 A and 11 B are mounted.
  • the overheating detection circuit 15 has a memory (not shown) that stores a threshold temperature (80° C., for example) that has been set lower than the upper temperature limit (140° C. to 175° C., for example) of the semiconductor switches 11 A and 11 B, and if the ambient temperature shown by the temperature element 14 is at least the threshold temperature, then the control circuit 13 outputs a detection result conveying that information to the control circuit 13 .
  • a threshold temperature 80° C., for example
  • the upper temperature limit 140° C. to 175° C., for example
  • the overheating detection circuit 15 detects temperature rises due to heat being produced when a half-on failure occurs, but a configuration is also possible in which the temperature element 14 is connected to the input-output unit 133 of the control circuit 13 , and thus the control unit 131 of the control circuit 13 detects temperature rises due to heat being produced when a half-on failure occurs.
  • a temperature threshold value is stored in the storage unit 132 .
  • the control unit 131 can detect whether or not the temperature has risen to at least the threshold temperature by comparing the temperature measured through the temperature element 14 to the temperature threshold value stored in the storage unit 132 .
  • the reverse flow detection circuit 16 is interposed between the cathode of the auxiliary battery 22 and the drains of the semiconductor switches 11 A and 11 B, and detects current that is about to flow from the auxiliary battery 22 to the load 31 via the power supply control device 10 . If the reverse flow detection circuit 16 detects current flowing from the cathode of the auxiliary battery 22 toward the drains of the semiconductor switches 11 A and 11 B (reverse current), then the reverse flow detection circuit 16 outputs a detection result conveying that information to the control circuit 13 .
  • FIG. 3 is a flowchart illustrating steps of processing that are executed by the control circuit 13 according to the first embodiment.
  • the control unit 131 of the control circuit 13 executes the following processing at periodic timing if, for example, an IG switch of a vehicle is ON.
  • the control unit 131 determines whether or not the two semiconductor switches 11 A and 11 B included in the power supply control device 10 are turned OFF (step S 101 ).
  • the control unit 131 keeps track of the ON or OFF control states of the semiconductor switches 11 A and 11 B and therefore can determine whether or not the semiconductor switches 11 A and 11 B are turned OFF by referencing the information that it keeps track of.
  • the control unit 131 determines whether or not a current (reverse current) has been detected flowing in a direction from the cathode of the auxiliary battery 22 to the drains of the semiconductor switches 11 A and 11 B, based the detection result from the reverse flow detection circuit 16 that is input through the input-output unit 133 (step S 102 ). If it is determined that a reverse flow has not been detected (S 102 : NO), the control unit 131 ends the processing of this flowchart without executing the processing below.
  • a current reverse current
  • control unit 131 If it is determined that reverse flow has been detected (S 102 : YES), the control unit 131 outputs a control signal to the drive circuit 12 to switch all of the semiconductor switches 11 A and 11 B OFF, and all of the semiconductor switches 11 A and 11 B are thus switched OFF through the drive circuit 12 (step S 103 ).
  • step S 101 determines whether or not a temperature of at least the threshold temperature has been detected by the overheating detection circuit 15 , based on the detection result from the overheating detection circuit 15 , the result being output through the input-output unit 133 (step S 104 ). If a temperature of at least the threshold temperature is not detected by the overheating detection circuit 15 (S 104 : NO), the control unit 131 ends the processing of this flowchart.
  • the control unit 131 If it is determined that a temperature of at least the threshold temperature has been detected by the overheating detection circuit 15 (S 104 : YES), it is possible that a half-on failure has occurred in at least one of the semiconductor switches 11 A and 11 B, and therefore the control unit 131 outputs a control signal to the drive circuit 12 to switch the semiconductor switches 11 A and 11 B from OFF to ON and executes control that switches the semiconductor switches 11 A and 11 B to ON (step S 105 ).
  • the semiconductor switches 11 A and 11 B are switched ON, so current can flow to the semiconductor switch 11 A (or the semiconductor switch 11 B) if a half-on failure has not occurred in the semiconductor switch 11 A (or the semiconductor switch 11 B), and thus it is possible to avoid concentration of current in the semiconductor switch 11 B (or the semiconductor switch 11 A) in which a half-on failure has occurred, and to prevent semiconductor switches from burning out due to an excessive rise in temperature.
  • the second embodiment describes a configuration that further includes a relay contact 11 C that is connected in parallel in relation to the semiconductor switches 11 A and 11 B.
  • FIG. 4 is a circuit diagram illustrating the power source system according to the second embodiment.
  • the power source system according to the second embodiment includes the power supply control device 10 , the main battery 21 , the auxiliary battery 22 , and the loads 31 and 32 , all of which may be installed in a vehicle for example.
  • the power supply control device 10 includes the semiconductor switches 11 A and 11 B, the drive circuit 12 , the control circuit 13 , the temperature element 14 , the overheating detection circuit 15 , and the reverse flow detection circuit 16 , and further includes a relay contact 11 C.
  • the relay contact 11 C is connected in parallel to the two semiconductor switches 11 A and 11 B, and has a NO terminal, a COM terminal, and a relay segment.
  • the NO terminal of the relay contact 11 C is connected to the drains of the semiconductor switches 11 A and 11 B
  • the COM terminal is connected to the sources of the semiconductor switches 11 A and 11 B.
  • the relay contact 11 C is provided with a relay coil whose one end is connected to the control circuit 13 . If the one end of the relay coil is open, then current flows through the relay coil and the relay segment is separated from the NO terminal. At this time, no current flows between the NO terminal and the COM terminal, and the relay contact 11 C is OFF. On the other hand, if the one end of the relay coil is grounded, then current flows from the control circuit 13 to the relay coil, and a magnetic field forms around the relay coil. Thus, the relay segment is attracted the NO terminal, and the relay segment and the NO terminal come into contact. At this time, the relay contact 11 C is ON and current flows between the NO terminal and the COM terminal of the relay contact 11 C.
  • FIG. 5 is a flowchart illustrating steps of processing that are executed by the control circuit 13 according to the second embodiment.
  • the control unit 131 of the control circuit 13 executes the following processing at periodic timing if, for example, an IG switch of the vehicle is ON.
  • the control unit 131 determines whether or not the two semiconductor switches 11 A and 11 B, which are included in the power supply control device 10 (step S 201 ), are turned OFF.
  • the control unit 131 keeps track of the ON or OFF control states of the semiconductor switches 11 A and 11 B and therefore can determine whether or not the control states of the semiconductor switches 11 A and 11 B are turned OFF by referencing the information that it keeps track of.
  • the control unit 131 determines whether or not a current (reverse current) has been detected flowing in a direction from the cathode of the auxiliary battery 22 to the drains of the semiconductor switches 11 A and 11 B, based on the detection result from the reverse flow detection circuit 16 that is input through the input-output unit 133 (step S 202 ). If it is determined that a reverse current is not detected (S 202 : NO), the control unit 131 ends processing of this flowchart without executing the processing below.
  • a current reverse current
  • control unit 131 If it is determined that reverse flow has been detected (S 202 : YES), the control unit 131 outputs a control signal to the drive circuit 12 to switch all of the semiconductor switches 11 A and 11 B OFF, and all of the semiconductor switches 11 A and 11 B are thus switched OFF through the drive circuit 12 (step S 203 ).
  • step S 201 determines whether or not a temperature of at least the threshold temperature has been detected by the overheating detection circuit 15 , based on the detection result from the overheating detection circuit 15 , the result being output through the input-output unit 133 (step S 204 ). If a temperature of at least the threshold temperature is not detected by the overheating detection circuit 15 (S 204 : NO), then the control unit 131 ends the processing of this flowchart.
  • the control unit 131 If it is determined that a temperature of at least the threshold temperature has been detected by the overheating detection circuit 15 (S 204 : YES), then it is possible that a half-on failure has occurred in at least one of the semiconductor switches 11 A and 11 B, and therefore the control unit 131 outputs a control signal to the drive circuit 12 to switch the semiconductor switches 11 A and 11 B ON, executes control through the drive circuit 12 to switch the semiconductor switches 11 A and 11 B OFF, and turns the relay contact 11 C OFF by allowing current to flow to the relay coil that is provided in the relay contact 11 C (step S 205 ).
  • the second embodiment even if power sources (the main battery 21 and the auxiliary battery 22 in the present embodiment) are connected to both the drain side and the source side of the semiconductor switches 11 A and 11 B, it is possible to detect a half-on failure without detecting the voltage between the drains and sources of the semiconductor switches 11 A and 11 B.
  • the semiconductor switches 11 A and 11 B and the relay contact 11 C are turned ON, current can flow to the semiconductor switch 11 A (or the semiconductor switch 11 B) in which a half-on failure has not occurred and the relay contact 11 C, and thus it is possible to avoid the case where current concentrates in the semiconductor switch 11 B (or the semiconductor switch 11 A) in which a half-on failure has occurred, and to prevent semiconductor switches from burning out due to an excessive rise in temperature.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Electronic Switches (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Protection Of Static Devices (AREA)
US16/482,928 2017-02-14 2018-01-25 Power supply control device Active US11038371B2 (en)

Applications Claiming Priority (4)

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JP2017025087A JP6669097B2 (ja) 2017-02-14 2017-02-14 給電制御装置
JPJP2017-025087 2017-02-14
JP2017-025087 2017-11-10
PCT/JP2018/002314 WO2018150840A1 (ja) 2017-02-14 2018-01-25 給電制御装置

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US11038371B2 true US11038371B2 (en) 2021-06-15

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JP (1) JP6669097B2 (ja)
CN (1) CN110235332B (ja)
DE (1) DE112018000822T5 (ja)
WO (1) WO2018150840A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11777306B2 (en) 2021-03-24 2023-10-03 Yazaki Corporation Load control device for controlling energization of a load using a semiconductor switch

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6620674B2 (ja) * 2016-05-26 2019-12-18 株式会社オートネットワーク技術研究所 給電制御装置、給電制御方法及びコンピュータプログラム
US10979043B2 (en) * 2017-09-21 2021-04-13 Shindengen Electric Manufacturing Co., Ltd. Switching element control circuit and power module
JP2020108219A (ja) * 2018-12-26 2020-07-09 株式会社デンソー 通電制御装置
US20220236468A1 (en) * 2019-05-30 2022-07-28 Toyobo Co., Ltd. Foldable display
DE102019121685B4 (de) * 2019-08-12 2021-03-04 Infineon Technologies Ag Intelligenter elektronischer schalter
US20230344223A1 (en) * 2019-12-09 2023-10-26 The Noco Company Jump starting device with a jump start current sharing system, and a jump start current sharing method
DE102020123149A1 (de) 2020-09-04 2022-03-10 Infineon Technologies Ag Ansteuerschaltung für elektronischen schalter
JP2023004142A (ja) * 2021-06-25 2023-01-17 株式会社オートネットワーク技術研究所 給電制御装置、給電制御方法、及びプログラム
US20230119272A1 (en) * 2021-10-19 2023-04-20 Lear Corporation Electrical system

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04265639A (ja) 1991-02-20 1992-09-21 Fujitsu Ltd 充電制御回路
US5898557A (en) * 1996-07-30 1999-04-27 Yazaki Corporation Switching apparatus
JP2010207061A (ja) 2009-03-06 2010-09-16 Denso Corp 車両用電源システム
WO2011052606A1 (ja) 2009-10-27 2011-05-05 パナソニック電工株式会社 ハイブリッドリレー
WO2011152086A1 (ja) 2010-06-03 2011-12-08 新神戸電機株式会社 電源装置
JP2013236297A (ja) 2012-05-10 2013-11-21 Yazaki Corp 半導体スイッチの制御装置
US20130320986A1 (en) * 2010-08-10 2013-12-05 Gs Yuasa International Ltd. Switch failure diagnosis device and electric storage apparatus
US20160301202A1 (en) 2013-08-30 2016-10-13 Autonetworks Technologies, Ltd. Semiconductor device
US20190252908A1 (en) * 2016-11-08 2019-08-15 Denso Corporation Power supply control apparatus and battery unit

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3837342B2 (ja) * 2002-02-28 2006-10-25 三洋電機株式会社 充電器
JP2004254386A (ja) * 2003-02-18 2004-09-09 Kyocera Corp 直流電源装置
JP2007014180A (ja) * 2005-06-29 2007-01-18 Denshi System Design Kk 直流電源装置
JP5574138B2 (ja) * 2006-09-19 2014-08-20 日立工機株式会社 アダプタ、電池パックとアダプタの組み合わせ、及びそれらを備えた電動工具
JP2008295291A (ja) * 2007-04-27 2008-12-04 Sanyo Electric Co Ltd 電源装置及び電動車輌
JP2010050531A (ja) * 2008-08-19 2010-03-04 Nippon Seiki Co Ltd 負荷駆動回路
FR2951320B1 (fr) * 2009-10-08 2011-12-30 Vehicules Electr Soc D Batterie electrique comprenant une pluralite d'elements generateurs d'energie electrique
JP5627264B2 (ja) * 2010-03-27 2014-11-19 三洋電機株式会社 車両用の電源装置及びこの電源装置を搭載する車両
JP2013021803A (ja) * 2011-07-11 2013-01-31 Panasonic Corp 電気自動車駆動システム
JP5776559B2 (ja) * 2012-01-12 2015-09-09 株式会社オートネットワーク技術研究所 給電制御装置
JP5944729B2 (ja) * 2012-04-24 2016-07-05 矢崎総業株式会社 通電回路の保護装置
JP2015023603A (ja) * 2013-07-16 2015-02-02 株式会社リコー 充電制御装置、画像形成装置、充電制御方法、およびプログラム
JP6201750B2 (ja) * 2013-12-27 2017-09-27 株式会社オートネットワーク技術研究所 車輌用電源装置
JP6613997B2 (ja) * 2015-04-22 2019-12-04 株式会社デンソー 電源装置
JP2018129762A (ja) * 2017-02-10 2018-08-16 株式会社オートネットワーク技術研究所 スイッチ制御装置、スイッチ切替え方法及びコンピュータプログラム

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04265639A (ja) 1991-02-20 1992-09-21 Fujitsu Ltd 充電制御回路
US5898557A (en) * 1996-07-30 1999-04-27 Yazaki Corporation Switching apparatus
JP2010207061A (ja) 2009-03-06 2010-09-16 Denso Corp 車両用電源システム
WO2011052606A1 (ja) 2009-10-27 2011-05-05 パナソニック電工株式会社 ハイブリッドリレー
WO2011152086A1 (ja) 2010-06-03 2011-12-08 新神戸電機株式会社 電源装置
US20130320986A1 (en) * 2010-08-10 2013-12-05 Gs Yuasa International Ltd. Switch failure diagnosis device and electric storage apparatus
JP2013236297A (ja) 2012-05-10 2013-11-21 Yazaki Corp 半導体スイッチの制御装置
US20160301202A1 (en) 2013-08-30 2016-10-13 Autonetworks Technologies, Ltd. Semiconductor device
US20190252908A1 (en) * 2016-11-08 2019-08-15 Denso Corporation Power supply control apparatus and battery unit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
International Search Report, Application No. PCT/JP2018/002314, dated Feb. 27, 2018. ISA/Japan Patent Office.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11777306B2 (en) 2021-03-24 2023-10-03 Yazaki Corporation Load control device for controlling energization of a load using a semiconductor switch

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