UA92123C2 - Способ производства альфа-полугидрата сульфата кальция из дегидрата сульфата кальция - Google Patents

Способ производства альфа-полугидрата сульфата кальция из дегидрата сульфата кальция

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Publication number
UA92123C2
UA92123C2 UAA200912011A UAA200912011A UA92123C2 UA 92123 C2 UA92123 C2 UA 92123C2 UA A200912011 A UAA200912011 A UA A200912011A UA A200912011 A UAA200912011 A UA A200912011A UA 92123 C2 UA92123 C2 UA 92123C2
Authority
UA
Ukraine
Prior art keywords
calcium sulfate
agitated autoclave
alpha
dihydrate
reaction chamber
Prior art date
Application number
UAA200912011A
Other languages
English (en)
Ukrainian (uk)
Inventor
Райнхард ЕГЕР
Альфред Брозиг
Original Assignee
Гренцебах-Бсх Гмбх
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Гренцебах-Бсх Гмбх filed Critical Гренцебах-Бсх Гмбх
Publication of UA92123C2 publication Critical patent/UA92123C2/ru

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    • C04B11/00Calcium sulfate cements
    • C04B11/02Methods and apparatus for dehydrating gypsum
    • C04B11/028Devices therefor characterised by the type of calcining devices used therefor or by the type of hemihydrate obtained
    • C04B11/032Devices therefor characterised by the type of calcining devices used therefor or by the type of hemihydrate obtained for the wet process, e.g. dehydrating in solution or under saturated vapour conditions, i.e. to obtain alpha-hemihydrate
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    • C04B11/00Calcium sulfate cements
    • C04B11/02Methods and apparatus for dehydrating gypsum
    • C04B11/028Devices therefor characterised by the type of calcining devices used therefor or by the type of hemihydrate obtained
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49139Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

Способ изготовления альфа-полугидрата сульфата кальция из дегидрата сульфата кальция, включает такие стадии: а) заполнения оборудованного смесителем автоклава (1) дегидратом кальция, b) непрямой подогрев оборудованоного смесителем автоклава (1), c) управляемое добавление и примешивание воды, d) предотвращение налипанию материала на поверхности реакционной камеры с помощью движимых цепей (3), расположенных на лопатях и/или приводном валу (16) оборудованного смесителем автоклава (1), e) периодическое или беспрерывное регулирование давления в реакционной камере путем выпуска пара по достижению определенного давления внутри камеры, причем пар выводят через циклонный сепаратор (17) и регулируемый клапан (18), f) подведение холодного воздуха для остаточного высушивания, g) удаление технологического материа�
UAA200912011A 2007-05-24 2008-05-20 Способ производства альфа-полугидрата сульфата кальция из дегидрата сульфата кальция UA92123C2 (ru)

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DE102007024188A DE102007024188B3 (de) 2007-05-24 2007-05-24 Verfahren zur Herstellung von Alpha-Calciumsulfat-Halbhydrat aus Calciumsulfat-Dihydrat und zugehörige Vorrichtung

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DE (2) DE102007024188B3 (ru)
ES (1) ES2402838T3 (ru)
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Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
CN102874858B (zh) * 2012-09-21 2014-10-22 孟庆前 一种工业副产品石膏的α晶型生产装置及方法
JP6078894B2 (ja) * 2014-02-11 2017-02-15 凱 劉 新型太陽エネルギー蒸気圧力設備
CN104984699A (zh) * 2015-07-24 2015-10-21 南京西普水泥工程集团有限公司 一种有机肥反应釜电加热系统及其方法
US10351437B2 (en) * 2016-10-17 2019-07-16 Lidds Ab Method for producing calcium sulphate hemihydrate with unique properties
CN108439451A (zh) * 2018-06-25 2018-08-24 中化重庆涪陵化工有限公司 利用磷石膏制备轻质碳酸钙的方法
DE102018132084B4 (de) * 2018-12-13 2020-10-15 ARCUS Greencycling Technologies GmbH Schneckenförderer; Verfahren zur Beseitigung bzw. Verhinderung von Ablagerungen an einer Innenwand eines Rohres eines Schneckenförderers
DE102018132082A1 (de) * 2018-12-13 2020-06-18 HKR Beteiligungs GmbH Schneckenförderer; Pyrolyseanlage; Verfahren zur Pyrolysierung eines Materials mittels eines beheizbaren Pyrolysereaktors
CN109911927B (zh) * 2019-04-19 2024-05-10 王焕德 吸水结构、压力容器以及从其内部吸水的方法
WO2021254550A1 (de) * 2020-06-16 2021-12-23 ARCUS Greencycling Technologies GmbH Schneckenförderer; verfahren zur beseitigung bzw. verhinderung von ablagerungen an einer innenwand eines rohres eines schneckenförderers

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB163468A (en) 1920-02-18 1921-05-18 William Malam Brothers Improvements in the manufacture of plaster of paris
US1901051A (en) 1929-08-08 1933-03-14 United States Gypsum Co High strength calcined gypsum and process of manufacturing same
US1979704A (en) * 1930-08-05 1934-11-06 United States Gypsum Co Method of producing high strength calcined gypsum
GB563019A (en) 1942-12-21 1944-07-26 Cuthbert Leslie Haddon Improvements in the manufacture of plaster of paris
DE937276C (de) * 1950-04-18 1955-12-29 Edmund Boergardts Verfahren und Vorrichtung zum Brennen von Gips
US2616789A (en) 1951-03-19 1952-11-04 Certain Teed Prod Corp Method of producing gypsum plaster
DE952967C (de) * 1952-01-01 1956-11-22 Emil Thiel Anlage zum Entwaessern von Gips durch ueberhitzten gespannten Dampf
DE1157128B (de) 1962-05-25 1963-11-07 Giulini Ges Mit Beschraenkter Verfahren zur Herstellung von ª‡-Calciumsulfat-Halbhydrat aus synthetischem Calciumsulfat-Dihydrat
AU423448B2 (en) 1968-03-28 1972-04-21 Monzino Riotinto Of Australia Limited Production of alpha plaster
JPS5044192A (ru) * 1973-08-22 1975-04-21
JPS54152692A (en) * 1978-05-22 1979-12-01 Kanegafuchi Chem Ind Co Ltd Continuous manufacture of gypsum needle-like crystal
JPH0742107B2 (ja) * 1987-05-06 1995-05-10 三菱重工業株式会社 α型半水石こうの製造方法
GB2205089B (en) * 1987-05-22 1991-03-13 Rhein Westfael Elect Werk Ag Process for production of calcium sulphate alpha-hemihydrate
DE3844938C2 (de) 1987-05-22 1996-09-19 Pro Mineral Ges Verfahren zur Erzeugung von Calciumsulfat-Alphahalbhydrat aus feinteiligem Calciumsulfat und dessen Verwendung
JPH01249636A (ja) * 1988-03-31 1989-10-04 Onoda Cement Co Ltd α型半水石膏の製造方法及び製造装置
RU2101252C1 (ru) * 1988-11-18 1998-01-10 Юнайтед Стейтс Джипсум Компани Сырьевая смесь для получения композиционного материала, композиционный материал, способ приготовления сырьевой смеси для получения композиционного материала и способ производства гипсоволокнистых плит
US5041333A (en) * 1989-02-24 1991-08-20 The Celotex Corporation Gypsum board comprising a mineral case
CN1026578C (zh) * 1990-09-10 1994-11-16 山东省建筑科学研究院 α-半水石膏的生产方法及设备
JP3245436B2 (ja) * 1991-12-18 2002-01-15 呉羽化学工業株式会社 α型半水石膏の製造方法
DE4217978A1 (de) 1992-05-30 1993-12-02 Heidelberger Zement Ag Verfahren zur Herstellung von ALPHA-Halbhydrat aus Calciumsulfat-Dihydrat in einem Reaktor
CN1076675A (zh) * 1993-02-20 1993-09-29 东南大学 生产高强α型半水石膏的设备
JP2000034121A (ja) * 1998-07-17 2000-02-02 Sumitomo Metal Mining Co Ltd 二水石膏の製造方法

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CN101679115A (zh) 2010-03-24
ES2402838T3 (es) 2013-05-09
EP2150504A1 (de) 2010-02-10
CN101679115B (zh) 2012-07-04
KR20100051590A (ko) 2010-05-17
CA2685984A1 (en) 2008-11-27
JP2010527876A (ja) 2010-08-19
RU2415818C1 (ru) 2011-04-10
KR101121656B1 (ko) 2012-04-16
EP2150504B1 (de) 2013-02-27
CA2685984C (en) 2012-07-03
PL2150504T3 (pl) 2013-06-28
PT2150504E (pt) 2013-04-16
US20100166640A1 (en) 2010-07-01
WO2008141627A1 (de) 2008-11-27
JP5161959B2 (ja) 2013-03-13
DE102007024188B3 (de) 2008-04-10
DE112008002038A5 (de) 2010-04-29
US7951352B2 (en) 2011-05-31

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