UA80662C2 - Method for preparation of silicium, method for separation of silicium from fusion of salts and method for preparation of silicium tetrafluoride - Google Patents
Method for preparation of silicium, method for separation of silicium from fusion of salts and method for preparation of silicium tetrafluoride Download PDFInfo
- Publication number
- UA80662C2 UA80662C2 UAA200700624A UAA200700624A UA80662C2 UA 80662 C2 UA80662 C2 UA 80662C2 UA A200700624 A UAA200700624 A UA A200700624A UA A200700624 A UAA200700624 A UA A200700624A UA 80662 C2 UA80662 C2 UA 80662C2
- Authority
- UA
- Ukraine
- Prior art keywords
- silicon
- melt
- differs
- carried out
- tetrafluoride
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 135
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 238000000926 separation method Methods 0.000 title claims abstract description 12
- 150000003839 salts Chemical class 0.000 title claims description 15
- 238000002360 preparation method Methods 0.000 title description 5
- 230000004927 fusion Effects 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 50
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 48
- 239000011737 fluorine Substances 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 230000005496 eutectics Effects 0.000 claims abstract description 29
- 150000004673 fluoride salts Chemical class 0.000 claims abstract description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000155 melt Substances 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 17
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 10
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 7
- 239000007790 solid phase Substances 0.000 claims abstract description 7
- 238000003682 fluorination reaction Methods 0.000 claims abstract description 6
- 238000001914 filtration Methods 0.000 claims abstract description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 7
- 239000003792 electrolyte Substances 0.000 claims description 36
- 150000001875 compounds Chemical class 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000005868 electrolysis reaction Methods 0.000 claims description 20
- 239000000725 suspension Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- 229910052783 alkali metal Inorganic materials 0.000 claims description 13
- 150000001340 alkali metals Chemical class 0.000 claims description 13
- 238000000354 decomposition reaction Methods 0.000 claims description 11
- 238000004090 dissolution Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 7
- 239000007791 liquid phase Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004821 distillation Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 238000005119 centrifugation Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 31
- 239000004065 semiconductor Substances 0.000 abstract description 22
- 238000009738 saturating Methods 0.000 abstract description 3
- 229910001515 alkali metal fluoride Inorganic materials 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 39
- 239000000047 product Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- -1 for example Chemical compound 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005188 flotation Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- SANRKQGLYCLAFE-UHFFFAOYSA-H uranium hexafluoride Chemical compound F[U](F)(F)(F)(F)F SANRKQGLYCLAFE-UHFFFAOYSA-H 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241001621721 Ziba Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000004754 hydrosilicons Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical group [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10705—Tetrafluoride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/24—Halogens or compounds thereof
- C25B1/245—Fluorine; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/34—Electrolytic production, recovery or refining of metals by electrolysis of melts of metals not provided for in groups C25C3/02 - C25C3/32
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C5/00—Electrolytic production, recovery or refining of metal powders or porous metal masses
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C5/00—Electrolytic production, recovery or refining of metal powders or porous metal masses
- C25C5/04—Electrolytic production, recovery or refining of metal powders or porous metal masses from melts
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2004124626/15A RU2272785C1 (ru) | 2004-08-12 | 2004-08-12 | Способ получения высокочистого порошка кремния из тетрафторида кремния с одновременным получением элементного фтора, способ отделения кремния от расплава солей, полученные вышеуказанным способом порошок кремния и элементный фтор и способ получения тетрафторида кремния |
PCT/RU2005/000400 WO2006019334A1 (fr) | 2004-08-12 | 2005-08-01 | Procede de production de silicium, procede de separation du silicium et d'une masse de sels en fusion et procede de fabrication du tetrafluorure de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
UA80662C2 true UA80662C2 (en) | 2007-10-10 |
Family
ID=35907667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAA200700624A UA80662C2 (en) | 2004-08-12 | 2005-01-08 | Method for preparation of silicium, method for separation of silicium from fusion of salts and method for preparation of silicium tetrafluoride |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070209945A1 (zh) |
CN (1) | CN101090862B (zh) |
DE (1) | DE112005001969T5 (zh) |
ES (1) | ES2319072B1 (zh) |
RU (1) | RU2272785C1 (zh) |
UA (1) | UA80662C2 (zh) |
WO (1) | WO2006019334A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2408533C2 (ru) * | 2005-05-13 | 2011-01-10 | Вульф НЕГЕЛЬ | Низкотемпературный электролиз расплава кварца |
CH703236B1 (fr) * | 2007-12-19 | 2011-12-15 | Ecole Polytech | Procédé de récupération de silicium dans des déchets de sciage. |
CN101736354B (zh) * | 2008-11-06 | 2011-11-16 | 北京有色金属研究总院 | 电化学法制备硅纳米粉、硅纳米线和硅纳米管中的一种或几种的方法 |
US9101896B2 (en) * | 2010-07-09 | 2015-08-11 | Sri International | High temperature decomposition of complex precursor salts in a molten salt |
RU2486290C1 (ru) * | 2012-05-10 | 2013-06-27 | Федеральное государственное бюджетное учреждение науки Институт высокотемпературной электрохимии Уральского отделения Российской Академии наук | Способ получения нано- и микроструктурных порошков и/или волокон кристаллического и/или рентгеноаморфного кремния |
CN106145127A (zh) * | 2015-04-21 | 2016-11-23 | 广州凌玮科技股份有限公司 | 一种中空微球二氧化硅的制备方法 |
CN105019015A (zh) * | 2015-07-09 | 2015-11-04 | 上海大学 | 一种无定型硅材料的电化学制备方法 |
US10106902B1 (en) | 2016-03-22 | 2018-10-23 | Plasma Processes, Llc | Zirconium coating of a substrate |
CN109037028B (zh) * | 2018-06-22 | 2021-03-02 | 江苏京尚圆电气集团有限公司 | 一种硅料清洗方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1080662A (en) * | 1912-01-23 | 1913-12-09 | Percy E Donner | Triple valve. |
US3022233A (en) * | 1959-11-18 | 1962-02-20 | Dow Chemical Co | Preparation of silicon |
SU460326A1 (ru) * | 1973-06-19 | 1975-02-15 | Институт общей и неорганической химии | Электролит дл получени металлического кремни электролизом из расплавов |
US3983012A (en) * | 1975-10-08 | 1976-09-28 | The Board Of Trustees Of Leland Stanford Junior University | Epitaxial growth of silicon or germanium by electrodeposition from molten salts |
US4142947A (en) * | 1977-05-12 | 1979-03-06 | Uri Cohen | Electrodeposition of polycrystalline silicon from a molten fluoride bath and product |
FR2480796A1 (fr) * | 1980-04-21 | 1981-10-23 | Extramet Sarl | Procede de production de silicium de haute purete par voie electrochimique |
RU2046095C1 (ru) * | 1991-06-25 | 1995-10-20 | Всероссийский научно-исследовательский институт неорганических материалов им.акад. А.А.Бочвара | Способ получения тетрафторида кремния |
NO942121L (no) * | 1994-06-07 | 1995-12-08 | Jan Stubergh | Fremstilling og anordning for fremstilling av silisium-"metall", silumin og aluminium-metall |
RU2156220C1 (ru) * | 1999-05-26 | 2000-09-20 | Карелин Александр Иванович | Способ получения раствора металлического кремния, способ получения металлического кремния из раствора и металлический кремний, полученный на основе этих способов, способ получения керамических материалов и керамический материал, полученный на основе этого способа |
NO20010962D0 (no) * | 2001-02-26 | 2001-02-26 | Norwegian Silicon Refinery As | FremgangsmÕte for fremstilling av silisium med høy renhet ved elektrolyse |
UA73847C2 (en) * | 2003-09-02 | 2005-09-15 | A method for preparing silicon tetrafluoride, a method for isolation of the silicon tetrafluoride from oxygen and highly volatile admixtures, a method for preparing silicon powder from the silicon tetrafluoride |
-
2004
- 2004-08-12 RU RU2004124626/15A patent/RU2272785C1/ru not_active IP Right Cessation
-
2005
- 2005-01-08 UA UAA200700624A patent/UA80662C2/uk unknown
- 2005-08-01 WO PCT/RU2005/000400 patent/WO2006019334A1/ru active IP Right Grant
- 2005-08-01 ES ES200750013A patent/ES2319072B1/es not_active Expired - Fee Related
- 2005-08-01 DE DE112005001969T patent/DE112005001969T5/de not_active Withdrawn
- 2005-08-01 CN CN2005800271905A patent/CN101090862B/zh not_active Expired - Fee Related
-
2007
- 2007-02-12 US US11/673,788 patent/US20070209945A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2006019334A1 (fr) | 2006-02-23 |
ES2319072A1 (es) | 2009-05-01 |
US20070209945A1 (en) | 2007-09-13 |
ES2319072B1 (es) | 2010-02-16 |
CN101090862A (zh) | 2007-12-19 |
DE112005001969T5 (de) | 2007-07-12 |
CN101090862B (zh) | 2010-08-11 |
RU2272785C1 (ru) | 2006-03-27 |
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