TWM432139U - A consumable isolation ring of an adjustable gap capacitively-coupled plasma processing chamber - Google Patents

A consumable isolation ring of an adjustable gap capacitively-coupled plasma processing chamber Download PDF

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Publication number
TWM432139U
TWM432139U TW100220376U TW100220376U TWM432139U TW M432139 U TWM432139 U TW M432139U TW 100220376 U TW100220376 U TW 100220376U TW 100220376 U TW100220376 U TW 100220376U TW M432139 U TWM432139 U TW M432139U
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Taiwan
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ring
movable
chamber
processing chamber
consumable
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TW100220376U
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English (en)
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Michael C Kellogg
Alexei Marakhtanov
Rajinder Dhindsa
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Lam Res Corp
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00—Casings, cabinets or drawers for electric apparatus
    • H05K5/02—Details
    • H05K5/0247—Electrical details of casings, e.g. terminals, passages for cables or wiring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/02—Single bars, rods, wires, or strips
    • H01B5/04—Single bars, rods, wires, or strips wound or coiled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Description

M432139 五、新型說明： 【新型所屬之技術領域】 -本創作係有關於一種可消耗隔離環，尤其有關於一種電敷處 理腔室之可動式基板支持組件用之可消耗隔離環。 " 【先前技術】 隨著每一個連續的半導體技術世代，晶圓直徑有增如的傾 向，且電晶體尺寸縮小，導致對於基板處理中之更高度的準確性 及再現性方面的需求。如矽晶圓的半導體基板材料慣常地使用 聚處理腔室來加以處理。電漿處理技術包含濺鍍沉積法嫩 deposition)、電聚辅助化學氣相沉積法^^奶，plasma enh_d cheimcal vapor deposition)、光阻剝除、及電漿蝕刻。電漿可 漿處理腔室中之適當的處理氣體受到射頻Mi〇 功率作用而產生。射頻電流在電漿處理腔室之流動可能影塑處理_。 ⑽茂電/ϋ理腔室可錄靠各_機構來魅電漿，如電感麵合 旋波、電子迴旋共振、電容耦合(平行板）。舉例 工;:ίΐΐ可在變壓耦合電漿⑽ 处工至中、或在電子迴旋共振(electroncyclotron 處理=室中產生。變壓耦合電漿處理腔室(其中射 之5至腔室中)可自位於加州費利蒙市的蘭姆研究公司 處skmr〇rati〇n)取得。可提供高密度電聚的高流量電漿 ^考，。〜及第5,820,723號所揭露，其揭露内容係併人於此作為 6,09= ^如描述於共同擁有的錢專利第 案之揭露內六伤/，頻电水蝕刻腔室之平行板處理腔室中產生，該 。合“开入於此作為參考。一較佳的平行板電漿處理腔 M432139 室為一包含有上喷淋頭電極及基板支持件的雙頻電容耦合電漿严 理腔室。為了說明的目的，.此處的實施例係參考平行板型 漿處理腔室來加以描述。 电 一種電漿蝕刻用的平行板電漿處理腔室係於圖i中闡明。 漿處理腔室1〇〇包含腔室110、入口負載閘112、及選用的出口 ，閘U4,其進一步的細節係於共同擁有的美國專利第6,824627 號中所描述，該案整體係併入於此作為參考。 ， …^ 口及出口負載閘112及114(若有設置)包含運送裝置，用以 仗曰s圓供應器162運送如晶圓之基板通過腔室並送出 容器164。負载縣176可在人口及出Π負載閘112及114中^ 所需之真空壓力。 如渦輪泵之真空泵172係用以維持腔室11〇中之所需壓力。 在電聚侧姻，腔f壓力受到控制並較佳地保持在足以 水的私度。腔至壓力過咼可能不利地使儀刻停止，而腔室壓力太 低則可能造成電漿消失。在如平行板電漿處理腔室之中等密产 漿處理腔室中，腔室壓力係較佳地維持在低於約2〇〇mT〇订(例如'， 低於100 mTorr ’如20至50 mTorr)(此處所用的「約」意指士⑽ 之壓力。 ^ 0) 為控制腔室中之壓力，可將真空果172連接至腔冑u〇之辟 中的出口，且可藉、由閥口3而節流。較佳地来說，當蝕刻;2 入腔室110時，真空泵能維持低於200mTorr的腔室11〇中之麗力二 腔室110包含具有上電極125(如喷淋頭電極)之上電極組 120、及基板支持件150。上電極組件120係裝設在上外殼13〇中。 上外殼130可藉由機構132垂直移動以調整介於上電極丨 板支持件150之間的間隙。 及基 可將處理氣體源170連接至外殼130以運送含有一 體的處理氣體至上電極組件12〇。在較佳的電漿處理腔室中，上二 極組件包含_分配祕，其可肋運送處理氣體轉近基板】 面之區域。可包含-或更多導氣環、噴射器和/或噴淋頭(如嗔淋 M432139 =電巧；)之氣體分配系統’係於共同擁有 之 些專利之揭露内容係併入於此作為參考。 唬中揭路’足 孔^電^5 „含喷淋頭電極’該棘頭電極包含氣體 極1==:氣態期望分佈之垂= 熱液體源m連接至靡组件120，】;;：=為可將傳 連接至基板支持件m。 了將另—個傳熱液體源 基板支持件15〇可具有用以將基板靜電性地夹 f 150之上表面155(支持表面)上的—或更多内^ ii件·射頻匹配電路之伴隨電 3=4號及f 7，161，121號中揭露，這些專利係併==^ 考。基板支持们50可在支持表面155上支持如平細匕^^ 300 mm晶圓之半導體基板。 ^ 〇晒或 基板支持件150較佳地在其中包含通道，用 上受到支_藏之下，供應崤讀減加Urn f 】在足夠低u獅基板上的光晴燒。藉由狀加 至=於 $板和基板支持表關之空間來控制基板溫_ = 專利第6，_2號中揭露，該案之揭露内容 ^支餅.可含有升降銷孔(未顯示）， 的機構垂直啟純過該孔，並可為了運送基板進人腔y -ϊ110古離開而將*板抬離支持表面155。升降銷孔可具有約3〇.08 夹时直控。升降銷孔之細節係於共同擁言的美國專利第 5 M432139 5,885,423，及第5,796,066號中揭露’該等專利之揭露内容係併·入 於此作為考。 圖2顯示電容耦合電漿處理腔室2〇〇之方塊圖，以閨明其 的射頻電流流動路徑。基板2〇6係於處理腔室2〇〇中受到處^。 為激發蝕刻基板206所用之電漿，腔室200中知處理氣體受射 頻功率作用。在基板處理期間，射頻電流可從鉍頻電源22^八荽 ，镜224經由射頻匹配網路22〇流人處理腔室。射 二3 著路徑240行進以與處理氣體麵合，而在受限腔室容積= 生用以處理置於底電極204之上方之基板206的電漿。 一 $控制電漿形成以及為保護處理腔室壁，可使用侷限 7不範性侷限環之細節係在共同擁有之的美國臨時專 月 1/2=56由號、第 61/238665 號、第 61/23867 號中描述 ? 19 m 申明水揭路内谷係併入於此作為參考。侷限淨 少如石夕、多晶石夕、碳化石夕、碳化棚、陶兗、銘、及1類似物( 電積環212用以圍繞在其^中將形成 限L至谷積21〇之周圍。除了偈限環21 逆 ===== 於基板處理朗所產生的電^^加餘^卜^ t體積)内。 210内。然而，在竿此Μ了!Μ限於文限腔室容積 . , j呆二怿件下電漿可在受限腔室容積210之外A. ^激發。在-例中’給定—祕^J之外文 室容積wo被排至_腔室200之夕待從受限腔 射頻場。外腔室中之射嚼尸的^外^域232内者)可能遭遇到 成。Π至中之射頻％的存在可料致未受限電漿祝之形 6 M432139 至下電流可自腔室壁沿著-組吊帶230行進 之表面經由射頻1配18路:，電流可自下電極支持結構228 似义、+. +須配、，冯路220流回至射頻電源222 接地著.路徑242行進，射頻電流在至電 域中積210之外側流動。因此，可在外腔室區 Γο； -- 受限電2的期望—種用以提供短射頻返回路徑並預防激發未-【新型内容】 耗隔電絲合電漿處理腔室之可消 呀、及言声的〇 3 : 有内技約14·8英吁、外徑約15.1英 12〇° 約0·1射之半圓柱狀壁部，該半上；凹部具有直徑 隔離環之巾心軸起約7.5封半^雄位於可消耗 粍隔離環之外表面上的直立凹。卩具有—開口於可消 部之直徑相等的寬度圓部3與半圓柱狀壁 0.09英吋之深度。 圓狂狀土邛，且母一凹部具有約 【實施方式】〜 -.. 燒可動式基板容^電漿處理腔室中圍 間隙彌軸罐細^谢===生 7 M432139 包含.可動式基板支持組件謂；包含中心電 應副產物從電魏雜室綱經㈣徑 式基板支持組件310在如圖3A所示之上方^^出=可動 之内端的下表面提供與可動式接地環400之上的^觸。 平部紙之内端的下表面較佳地包含用以增賴的電接觸^水 :1接觸的導電塗料。當可動式基板支持組件 漿處理。條義可包含在下水平㈣e 水平部305c旋轉以調整通過： ϋΐ 顯示可動式基板支持組件310之下 =置’在該處半導體基板可被運送至可動式基板支持組件_ 317可Λΐίί支持組件31G包含：可動式接地環、下電極 Ilk 靜^地被夾躲其上之靜電夾盤 31卜且右娃、真二有圍繞ESC 312之電漿曝露表面的邊緣環 緣产i下:邊緣_ 311之電聚曝露表面的介電環306、位於邊 少一絕緣環315、在介電環306之下且環繞絕緣 ^支捭於所製成的固定式接地環34G。可動式接地環400 350上，該可壓式柱塞350受支持於固定式 上。备可動式基板支持組件310移至上方位置時，可 3=开iH〇可對於固定式接地環340垂直移動，以與偈限i 外lit 1 動絲板支持組件31G可受支持於電接地偏塵 桎夷=接?環340可包含械壁之外部中、環向分隔之三個 土 '母柱塞支持孔接合於含有可壓式鎖之柱塞支持外 M432139
殼’使得銷的上端延伸於底壁之上表面上方。. 圖jA-4C顯示可動式接地環4〇〇之細部。可動式接地環4〇〇 包含·環狀底壁402 ;及自底壁402之内周向上延伸之侧壁4〇1。 側壁401具有用以環繞固定式接地環34〇之外周的内表面， 使得可動式接地環400可對於固定式接地環34〇垂直移動。
如圖4B所示，可動式接地環4〇〇較佳地具有在内表面4〇la 中的段差部440 ’該段差部440係藉由：自侧壁4〇1之上表面4〇比 延伸之垂直表面440a ;及在内表面4〇la及垂直表面440a之間延 伸之^平表面440b，所形成。如圖4C所示，水平表面44〇b包含 用以容納與在可消耗隔離環幻0(圖3A-3B)之下表面中的凹部321 4目配之垂直銷W魄數個盲孔4她，當可動式基板支持組件31〇 在下方位置時，該可消耗隔離環32〇用以使側壁4〇1 電環300電絕緣。 —如圖5A所示’可消耗隔離環32〇包含在其下表面中的複數個 部321。凹部321用以容納自在段差部44〇之水平表面44〇b 中的目洞440h延伸之垂直銷499，每一垂直銷499 心凹部321之令。 士曰…疋 貫施例中，如圖5A_5C所示，可消耗隔離環32〇具有内 、外徑約15,1英忖、及高約〇.3英口寸之矩形^面。 ί ^，t隔之三個凹部321係設置於可龍隔離環320之 卜角洛之中。每個凹部321具有直徑約oj英吋之半圓柱 pla半圓柱狀壁部32la之中心軸位於可消耗隔離環幻〇 I·5射半徑處。半®柱狀壁部3瓜係連接於開口在可^ ，離環320之外表面上的直立壁部㈣。直立壁部伽 半圓柱狀壁部321a之直徑相等的寬度。凹部321具 ^度。凹部321之所有邊緣較佳地具有約⑽2英^〇9 = =。凹部321用以調節可消耗隔離環32〇與較佳情形係由’ =可動式接鱗4G0之間的鱗脹鎌差異，縣可消ρ : 0與可動式接地環4GG所曝露的溫絲_，將可消耗^離^ M432139 320中心地對齊可動式接地環働。 & 440上時，可消耗隔離環32〇 衣4υυ之段差邠 環400之側壁401的内表面4〇1妓^ ,貝貝上與可動式接地 “表面_ ”上射動^地ϊ: 401b共同延伸。 、例土叫1的上表面 可消耗隔離環32G可由-或更多如石英、梦化 環材料賴成。較佳地來說， 況下，可作成各種變化及修改，並使用解物π貞之乾圍邮 【圖式簡單說明】 圖1顯示示範性電漿處理腔室之示意圖。 之方 塊圖 圖2顯示電雜合賴處理腔室及^的射頻返回路徑 豐严顯示當示範性間隙可調式電容搞合電 雜件在妨位置時，該示齡_式電ϋΐ 電漿處理腔室之部分剖面圖。 屯谷耦合 =3Β顯示圖3Α之示範性間隙可調式電錄合電 h 之’刀剖_，其中其可動式基板支持組件係位於下方位二至 ，4A-4C顯示可動式基板支持、组件的可動式接地王袁之細 ，5A-5C顯示具有減個凹部的可雜隔離環之。。 【主要元件符號說明】 100 電漿處理腔室 入口負載閘 出口負載閘 110 腔室 112 114 M432139
120 上電極組件 125 上電極 130 上外殼 132 機構1 150 基板支持件 155 上表面 162 晶圓供應器 164 晶圓谷β 170 處理氣體源 172 真空泵 173 閥 174 傳熱液體源 176 負載閘泵._ 200 處理腔室 202 上電極 204 底電極 206 基板 210 受限腔室容積 212 侷限環 214 邊緣環 216 絕緣環 218 ' 絕緣環 220 射頻匹配網路 222 射頻電源 224 電纜 226a 狹缝 226b 狹缝一 226c 狹缝 228 下電極支持結構 M432139 230 吊帶 232 、外部區域 234 渦輪果 240 路徑 242 路徑 250 未受限電漿 252 接點 300 電漿處理腔室 303 中心電極板 304 環狀外電極 305 侷限環 305a 上水平部 305b . .垂直部.. — 305c 下水平部 306 介電環 307 開缝環 310 可動式基板支持組件 311 邊緣環 312 靜電夾盤 315 絕緣環 317 下電極 320 可消耗隔離環 320a 上表面 320b 内表面 321 凹部 321a 半圓柱狀壁部 321b 直立壁部 340 固定式接地環 350 .可壓式柱塞 M432139 360 電接地偏壓外殼 400 可動式接地環 401 侧壁 401a 内表面 401b 上表面 402 底壁 440 段差部 440a 垂直表面 440b 水平表面 440h 盲孔 499 銷 101年2月17日修正替換頁 100220376(無劃線） 13

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  1. 六' 申請專利範圍：. ·~Ί間隙可調式電雜合電減理腔室之可雜隔離環， 高产^可消耗隔離環具有内徑約14.8英吋、外徑約15.1英吋、及 消$離====二及g位角12〇。分隔並置於該可 壁部:中半，柱狀壁部’該半圓柱狀 — 釉位於。亥可沩耗隔離垓之中心軸起約7.5英吋半徑處. 壁母Ζ部具有開口於該可消耗隔離環之一外表面上的;立 連接#半與Γ圓柱狀壁部之直徑相等的寬度、並 母一凹部具有約0.09英忖之深度。 2可貞之間隙可調式電容輕合電漿處理腔室之 倒角離每，.其中这相部之全部邊緣具有_英忖寬之45。 3可^Ϊ_可赋電容私賴處理腔室之 中祕，用叫支持於—可動式接地環之—段差部上，其 式=Ιίίί地環用以緊貼圍繞並提供射頻返回路徑至一可動 ，射賦-域組件用以 該段差部係藉由自該側壁之一 該内表面及該垂直表面之間延伸之伸之-垂直表面及在 面包含複數個盲孔，該複數個盲孔係用消= M432139 之該等凹部相配之銷 101年2月17曰修正替換頁 100220376(無劃線） 可消3之間隙可調式電容#合1祕理腔室之 環之該=二時該環=持於該可動式接地 表面貝貝上與該可動式接地環之該側壁之該上表面共同延伸。 可第^項之間隙可調式電容_合電漿處理腔室之 以C地環電絕緣於該可動式基板支 露表面。％衣其中該介電環具有圍繞一邊緣環之-電襞曝 6.如申请專利範圍第1項之間 带々 、及—種噴鍍金屬所組成之群組的材料所製 可消耗隔離環，由—或多種選自於由周石式合山賴處理腔室之 氧化銘、《 ....... 、由石央、矽、碳化石々、H钇、 成
    七、圖式： 15
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