JP2008147650A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2008147650A JP2008147650A JP2007308337A JP2007308337A JP2008147650A JP 2008147650 A JP2008147650 A JP 2008147650A JP 2007308337 A JP2007308337 A JP 2007308337A JP 2007308337 A JP2007308337 A JP 2007308337A JP 2008147650 A JP2008147650 A JP 2008147650A
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- 238000012545 processing Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 230000002093 peripheral effect Effects 0.000 claims description 60
- 238000002347 injection Methods 0.000 claims description 42
- 239000007924 injection Substances 0.000 claims description 42
- 230000003028 elevating effect Effects 0.000 claims description 18
- 239000002245 particle Substances 0.000 abstract description 31
- 239000007789 gas Substances 0.000 description 81
- 238000000034 method Methods 0.000 description 29
- 239000010409 thin film Substances 0.000 description 29
- 239000012495 reaction gas Substances 0.000 description 24
- 238000012986 modification Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 238000001816 cooling Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】 チャンバーと、チャンバー内の上部に配設された絶縁部材と、チャンバーの側壁に配設されるとともに、接地電位が印加される接地電極と、チャンバー内の下部に配設されるとともに、基板が載置される下部電極とを備え、下部電極は、複数の電極に分割形成されているプラズマ処理装置。これにより、基板の上縁部と、側部と、下縁部及び下部中心領域に堆積したパーチクルを効率よく除去することが可能になる。
【選択図】 図1
Description
110:ガス供給流路
120:ガス供給部
130:ゲート
200:絶縁部材
210:冷却ライン
300:接地電極
310:内部電極
320:外部電極
400:下部電極
410:第1の電極
420:第2の電極
500:昇降部材
700:ライナー
Claims (10)
- チャンバーと、前記チャンバー内の上部に配設された絶縁部材と、前記チャンバーの側壁に配設されるとともに、接地電位が印加される接地電極と、前記チャンバー内の下部に配設されるとともに、基板が載置される下部電極とを備え、
前記下部電極は、複数の電極に分割形成されていることを特徴とするプラズマ処理装置。 - 前記複数の電極は内側電極と外側電極を備え、前記内側電極及び外側電極は同心をなして0.1mm〜10mmほど離れていることを特徴とする請求項1記載のプラズマ処理装置。
- 前記下部電極の下部には下部電極を昇降させる昇降部材が更に配備され、
前記昇降部材は、内側電極に接続されるとともに、絶縁部材を昇降させる上部昇降部材を有し、
前記昇降部材は、内側電極と外側電極を交互に昇降することを特徴とする請求項2記載のプラズマ処理装置。 - 前記絶縁部材とチャンバーの内側面との間には接地電極が更に配備され、前記接地電極にはガス供給流路が形成され、このガス供給流路にはガス供給部が設けられ、前記外側電極は電極支持台により固定され、外側電極の外周面にはフォーカスリングが更に配備され、フォーカスリングとチャンバーの内側壁との間にはベントプレートが更に配備されていることを特徴とする請求項2記載のプラズマ処理装置。
- 前記複数の電極にはガス噴射孔が穿設されるが、ガス噴射孔は内側電極の外周面と外側電極の内周面に穿設されることを特徴とする請求項2記載のプラズマ処理装置。
- 前記内側電極と外側電極との間には中間電極が更に配備され、内側電極と外側電極との間には電圧分配器が接続され、内側電極及び中間電極にはRF電源装置が接続され、内側電極と中間電極とRF電源装置との間にはセンサーが更に設けられ、中間電極の内周面及び外周面にガス噴射孔が更に穿設されていることを特徴とする請求項2記載のプラズマ処理装置。
- 前記中間電極の直径は外側電極の直径の56%〜70%であり、内側電極の直径は外側電極の直径の40%〜56%であり、かつ、前記内側電極と中間電極との間の間隔、及び中間電極と外側電極との間の間隔はそれぞれ0.1mm〜10mmであることを特徴とする請求項6記載のプラズマ処理装置。
- 前記内側電極の直径は120mm〜170mmであり、中間電極の直径は170mm〜210mmであり、かつ、外側電極の直径は210mm〜300mmであることを特徴とする請求項6記載のプラズマ処理装置。
- 前記絶縁部材は、内側絶縁部材と、該内側絶縁部材の外周面と係合される外側絶縁部材と、を備え、
前記絶縁部材の上面及びチャンバーリッドの下面には互いに対応する溝及び突部が設けられて、絶縁部材の上面とチャンバーリッドの下面とが係合可能になることを特徴とする請求項2記載のプラズマ処理装置。 - 前記内側絶縁部材の下面には閉曲線をなすように下部溝が凹設され、該下部溝にはガスインジェクターリングが挿着され、
絶縁部材には、前記下部溝と連通自在なガスラインが上下方向に貫設されていることを特徴とする請求項9記載のプラズマ処理装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060124763 | 2006-12-08 | ||
KR10-2006-0124763 | 2006-12-08 | ||
KR10-2007-0085561 | 2007-08-24 | ||
KR1020070085561A KR20080053167A (ko) | 2006-12-08 | 2007-08-24 | 플라즈마 처리 장치 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008147650A true JP2008147650A (ja) | 2008-06-26 |
JP2008147650A5 JP2008147650A5 (ja) | 2008-08-07 |
JP4757856B2 JP4757856B2 (ja) | 2011-08-24 |
Family
ID=39496585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007308337A Expired - Fee Related JP4757856B2 (ja) | 2006-12-08 | 2007-11-29 | プラズマ処理装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080135177A1 (ja) |
JP (1) | JP4757856B2 (ja) |
KR (1) | KR100823302B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013055165A (ja) * | 2011-09-01 | 2013-03-21 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2013251546A (ja) * | 2012-06-04 | 2013-12-12 | Psk Inc | 基板処理装置及び方法 |
KR20170096596A (ko) * | 2016-02-16 | 2017-08-24 | 램 리써치 코포레이션 | 웨이퍼 이송을 위한 웨이퍼 리프트 링 시스템 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100978754B1 (ko) * | 2008-04-03 | 2010-08-30 | 주식회사 테스 | 플라즈마 처리 장치 |
US20080277064A1 (en) * | 2006-12-08 | 2008-11-13 | Tes Co., Ltd. | Plasma processing apparatus |
JP5641556B2 (ja) * | 2009-09-30 | 2014-12-17 | 株式会社Screenホールディングス | 基板処理装置 |
JP5782226B2 (ja) * | 2010-03-24 | 2015-09-24 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5567392B2 (ja) * | 2010-05-25 | 2014-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
SG11201608771WA (en) * | 2014-05-09 | 2016-11-29 | Ev Group E Thallner Gmbh | Method and device for plasma treatment of substrates |
IT201600099783A1 (it) * | 2016-10-05 | 2018-04-05 | Lpe Spa | Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati |
Citations (3)
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JP2003155569A (ja) * | 2001-11-16 | 2003-05-30 | Nec Kagoshima Ltd | プラズマcvd装置及びそのクリーニング方法 |
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JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
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- 2007-11-29 JP JP2007308337A patent/JP4757856B2/ja not_active Expired - Fee Related
Patent Citations (3)
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JP2003155569A (ja) * | 2001-11-16 | 2003-05-30 | Nec Kagoshima Ltd | プラズマcvd装置及びそのクリーニング方法 |
WO2004100247A1 (ja) * | 2003-05-12 | 2004-11-18 | Sosul Co., Ltd. | プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステム |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013055165A (ja) * | 2011-09-01 | 2013-03-21 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2013251546A (ja) * | 2012-06-04 | 2013-12-12 | Psk Inc | 基板処理装置及び方法 |
KR20170096596A (ko) * | 2016-02-16 | 2017-08-24 | 램 리써치 코포레이션 | 웨이퍼 이송을 위한 웨이퍼 리프트 링 시스템 |
KR102630917B1 (ko) | 2016-02-16 | 2024-01-29 | 램 리써치 코포레이션 | 웨이퍼 이송을 위한 웨이퍼 리프트 링 시스템 |
Also Published As
Publication number | Publication date |
---|---|
KR100823302B1 (ko) | 2008-04-17 |
US20080135177A1 (en) | 2008-06-12 |
JP4757856B2 (ja) | 2011-08-24 |
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