CN202307788U - 可调间隔电容耦合等离子体处理室的耗材隔离环 - Google Patents
可调间隔电容耦合等离子体处理室的耗材隔离环 Download PDFInfo
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Abstract
描述了可调间隔电容耦合等离子体处理室的耗材隔离环。该耗材隔离环配置为被支撑于适配固定接地环的可移动接地环的台阶之上。该耗材隔离环配置为电隔离可移动接地环和可移动衬底支撑组件的介电环。
Description
技术领域
本实用新型总体涉及等离子体处理室。
背景技术
对于每一代后继的半导体技术，晶片的直径趋向于增大，而晶体管的尺寸则趋于减小，导致在衬底处理过程中要求更高程度的精确度和可重复性。半导体衬底材料如硅晶片的常规处理使用等离子体处理室。等离子体处理技术包括溅射沉积、等离子体增强化学气相沉积(PECVD)、抗蚀剂剥离和等离子体蚀刻。可通过向等离子体处理室中的合适工艺气体施加射频(RF)功率而生成等离子体。等离子体处理室中的射频电流可影响处理过程。
等离子体处理室可依靠各种装置例如电感耦合(变压器耦合)、螺旋波、电子回旋共振、电容耦合(平行板)生成等离子体。举例来说，可以在变压器耦合等离子体(TCPTM)处理室中，或者在电子回旋共振(ECR)处理室中生成高密度等离子体。变压器耦合等离子体处理室可以从美国加利福尼亚州弗里蒙特市的朗姆研究公司(Lam Research Corporation)获得，其中射频能量电感耦合到该室。在共有的专利号为5,948,704的美国专利中公开了能够提供高密度等离子体的高流量等离子体处理室的实施例，在此将该专利的公开内容引作参考。在共有的专利号为4,340,462、4,948,458、5,200,232和5,820,723的美国专利中公开了平行板等离子体处理室、 电子回旋共振(ECR)等离子体处理室、以及变压器耦合等离子体(TCPTM)处理室，在此将该些专利的公开内容引作参考。
举例来说，等离子体可以产生于平行板处理室中，例如在共有的专利号为6,090,304的美国专利中所描述的双频率等离子体蚀刻室，在此将该专利的公开内容引作参考。优选的平行板等离子体处理室是包括了上部喷林头电极和衬底支撑件的双频率电容耦合等离子体处理室。出于说明的目的，参考平行板式等离子体处理室对此处的实施方式进行描述。
图1说明了用于等离子体蚀刻的平行板等离子体处理室。该等离子体处理室100包含了腔室110、入口负荷锁112、以及可选的出口负荷锁114，在共有的专利号为6,824,627的美国专利中描述了该等离子体处理室进一步的细节，在此将该专利整体引作参考。
负荷锁112和114(如果提供了)包括传送装置以传送衬底(例如来自晶片供应部件162的晶片)穿过腔室110，并到达晶片接收部件164。负荷锁泵176可提供负荷锁112和114中所期望的真空压强。
真空泵172例如涡轮泵适于在腔室110中保持所期望的压强。在等离子体蚀刻过程中，腔室压强是受控制的，并优选地保持在足以维持等离子体的水平。太高的腔室压强可能不利于蚀刻停止，而太低的腔室压强则可能导致等离子体熄灭。在中等密度等离子体处理室例如平行板等离子体处理室中，优选地保持腔室压强低于大约200毫托(如小于100毫托，比如20到50毫托)(此处的“大约”意指±10％)。
为了控制腔室中的压强，真空泵172可连接到在腔室110壁中的出口，并可通过阀173调节。优选地，真空泵在蚀刻气体流入腔室110中时能够保持腔室110中的压强小于200毫托。
腔室110包括上电极组件120，该上电极组件120包括上电极125(例如喷淋头电极)和衬底支撑件150。上电极组件120安装在上壳体130中。上壳体130可通过装置132竖直移动以调节上电极125和衬底支撑件150之间的间隔。
工艺气体源170可连接到壳体130以传送包含了一种或多种气体的工艺气体到上电极组件120。在优选的等离子体处理室中，上电极组件包含配气系统，该系统可用于传送工艺气体到邻近衬底表面的区域。在共有的专利号为6,333,272、6,230,651、6,013,155和5,824,605的美国专利中公开了可包含一个或多个气体环、注入器和/或喷淋头的配气系统，在此将该些专利的公开内容引作参考。
上电极125优选地包含喷淋头电极，该喷淋头电极包括了气孔(未图示)以由气孔分送工艺气体。气孔直径可在0.02到0.2英寸之间。喷淋头电极可包含一个或多个竖直空间分隔挡板(vertically spaced-apart baffle plates)，该些挡板可促进期望的工艺气体分送。上电极和衬底支撑件可以由任意合适的材料如石墨、硅、碳化硅、铝(如阳极氧化铝)、或这些材料的组合物制成。传热液体源174可连接到上电极组件120，另一个传热液体源可连接到衬底支撑件150。
衬底支撑件150可有一个或多个嵌入式夹持电极，用于静电夹持衬底支撑件150的上表面155(支撑表面)上的衬底。衬底支撑件150可由射频源及伴随的电路系统(未图示)如射频匹配电路系统供电。衬底支撑件150优选是温度控制的，且可以可选地包括加热装置(未图示)。在共同转让的专利号为6,847,014和7,161,121 的美国专利中公开了加热装置的实施例，在此将该些专利引作参考。衬底支撑件150可支撑半导体衬底如支撑表面155上的平面板(flat panel)或者200毫米或300毫米晶片。
衬底支撑件150优选地包括位于其中的通道，用于在受支撑表面155支撑的衬底下面供应传热气体如氦，以在等离子体处理过程中控制衬底温度。举例来说，氦背面冷却(helium back cooling)可保持晶片温度足够低以防止衬底上的光刻胶燃烧。在共有的专利号为6,140,612的美国专利中公开了通过向衬底和衬底支撑表面之间的空间引入增压气体来控制衬底温度的方法，在此将该专利引作参考。
衬底支撑件150可包括起模销孔(1ift pin holes)(未图示)，通过这些起模销孔起模销可被合适的装置竖直驱动，并可升高衬底脱离支撑表面155以便运入腔室110以及从腔室110运出。起模销直径可在0.08英寸左右。在共有的专利号为5,885,423和5,796,066的美国专利中公开了起模销孔的细节，在此将该些专利的公开内容引作参考。
图2示出了电容耦合等离子体处理室200的框图来说明其中射频电流的流动路径。衬底206在处理室200中进行处理。为点燃等离子体以蚀刻衬底206，向室200中的工艺气体施加射频功率。在衬底处理过程中，射频电流可以从射频供应件222沿电缆224经过射频匹配网络220流入处理室200。射频电流可以沿路径240流动以与工艺气体耦合以在限定室容积腔210中生成等离子体，用于处理位于底电极204上面的衬底206。
为了控制等离子体的形成以及保护处理室壁，可使用限定环212。在共有的于2009年8月31日提交申请的临时专利申请序列号为61/238656、61/238665、61/238670的美国专利申请中以及公开 号为2008/0149596的美国专利申请中描述了典型限定环的细节，在此将该些专利申请的公开内容引作参考。限定环212可由导电材料如硅、多晶硅、碳化硅、碳化硼、陶瓷、铝、以及类似的材料制成。通常限定环212可配置为围绕在其中形成等离子体的限定室容积腔210的外围。除限定环212之外，限定室容积腔210的外围也可以由上电极202、底电极204、一个或多个绝缘环如216和218、边缘环214以及下电极支撑结构228来限定。
为了排放来自限定区域(限定室容积腔210)的中性气体簇，限定环212可包括多个槽(比如槽226a、226b和226c)。中性气体簇在由涡轮泵234抽出处理室200之前可横穿限定室容积腔210进入处理室200的外部区域232(external region)(在室容积腔外面)。
衬底处理过程中形成的等离子体应当保持在限定室容积腔210中。然而，在一定条件下，等离子体可能在限定室容积腔210之外点燃。举例来说，给定高增压环境，中性气体簇(从处理室200的限定室容积腔210排出到外部区域232)可能遭遇射频场。射频场在外室(outside chamber)的存在可能引起非限定等离子体250的形成。
在典型的处理环境中，射频电流从射频发生器流入限定室容积腔210，然后电接地。射频电流从室容积腔210到电接地的流动路径被称作射频返回路径。参照图2，射频返回路径242可包括沿一组限定环212的内部流动的射频返回电流。在点252，射频返回路径可沿限定环212的外部流动以桥接处理室200的内壁表面。射频返回电流可从室壁随一组带230流到下电极支撑结构228。射频返回电流可从下电极支撑结构228的表面经由射频匹配网络220流回射频源222。
从上述内容可知，沿着路径242，射频电流在其电接地的途中流过限定室容积腔210的外面。所以，射频场可产生于外室区域。这样的射频场的存在可能引起非限定等离子体250形成于处理室200的外部区域232中。
因此，用于提供短的射频返回路径同时防止非限定等离子体点燃的装置是需要的。
实用新型内容
本实用新型的目的是提供可调间隔电容耦合等离子体处理室的耗材隔离环。此处描述的是可调间隔电容耦合等离子体处理室的耗材隔离环，该耗材隔离环具有内径大约14.8英寸，外径大约15.1英寸，高大约0.3英寸的矩形截面，具有三个设置于该耗材隔离环下外缘(l0wer outer edge)、方位角间距120°的凹处，其中：每个凹处具有直径大约为0.1英寸的半圆柱壁部分(walled portion)，该半圆柱壁部分的中心轴位于离耗材隔离环的中心轴大约7.5英寸的半径上；每个凹处具有在耗材隔离环外表面上有开口的直壁部分，该直壁部分宽度等于半圆柱壁部分的直径，并且与半圆柱壁部分相连接；每个凹处深度大约为0.09英寸。所述凹处的所有边缘具有大约0.02英寸宽的45°切角。所述耗材隔离环配置为被支撑于可移动接地环的台阶之上，其中：所述可移动接地环被配置为适配可移动衬底支撑组件的固定接地环并提供至可移动衬底支撑组件的固定接地环的射频返回路径，所述可移动衬底支撑组件被配置为支撑进行等离子体处理的半导体衬底，所述可移动接地环包含环形底部壁和从所述底部壁的内圆周向上延伸的侧壁，所述侧壁具有被配置为围绕所述固定接地环外圆周的内表面，使得所述可移动接地环相对于所述固定接地环可竖直移动，所述台阶由从所述侧壁的上表面延伸而来的竖直表面和延伸于所述内表面与所述竖直表面之间的水平 表面形成，所述水平表面包括多个适于接收销的盲孔，所述销与所述耗材隔离环的所述凹处配对。当所述耗材隔离环被支撑于所述可移动接地环的所述台阶之上时，所述耗材隔离环的内表面与所述可移动接地环的所述侧壁的所述内表面基本上是同延的，并且所述耗材隔离环的上表面与所述可移动接地环的所述侧壁的所述上表面基本上是同延的。所述耗材隔离环配置为电隔离所述可移动接地环和所述可移动衬底支撑组件的介电环，其中所述介电环具有围绕边缘环的等离子体暴露面。此处所述的耗材隔离环提供短的射频返回路径，同时防止非限定等离子体点燃。
附图说明
图1所示为典型等离子体处理室的示意图。
图2所示为现有技术中电容耦合等离子体处理室及其射频返回路径的框图。
图3A所示为当可调间隔电容耦合等离子体处理室的可移动衬底支撑组件处于上部位置时，该典型可调间隔电容耦合等离子体处理室的部分截面。
图3B所示为当可调间隔电容耦合等离子体处理室的可移动衬底支撑组件处于下部位置时，图3A中的典型可调间隔电容耦合等离子体处理室的部分截面。
图4A-4C所示为可移动衬底支撑组件的可移动接地环的细节。
图5A-5C所示为有多个凹处的耗材隔离环的细节。
具体实施方式
此处描述的是围绕可调间隔电容耦合等离子体处理室中的可移动衬底支撑组件的耗材隔离环。图3A和3B所示为典型可调间隔电容耦合等离子体处理室300的部分截面。室300包含可移动衬底支撑组件310和上电极，该上电极包括中心电极板303、环形外部电极304以及从环形外部电极304向外延伸的导电限定环305，该导电限定环305包括上水平部分305a、从上水平部分305a的外端向下延伸的竖直部分305b以及从竖直部分305b的下端向内延伸的下水平部分305c，该下水平部分305c包括径向扩展槽，经由这些扩展槽工艺气体和反应副产品被抽出等离子体处理室300。当可移动衬底支撑组件310处于如图3A中所示的上部位置时，下水平部分305c内端的下表面与可移动接地环400的上端电接触。下水平部分305c内端的下表面优选地包括适于增强与可移动接地环400电接触的导电涂层。当可移动衬底支撑组件310处于上部位置时，对支撑于可移动衬底支撑组件310之上的半导体衬底进行等离子体处理。限定环305可包括至少一个位于下水平部分305c下面的开槽环307，该开槽环307相对于下水平部分305c可旋转以便调整通过径向扩展槽的气流传导(gas flow conductance)。图3B所示为可移动衬底支撑组件310处于下部位置，在该位置时，半导体衬底可传送到可移动衬底支撑组件310上面。
可移动衬底支撑组件310包含可移动接地环400、下电极317、静电卡盘(ESC)312、边缘环311、介电环306、至少一个绝缘环315、固定接地环340，其中，在静电卡盘312上半导体衬底被静电夹持，边缘环311具有围绕ESC 312的等离子体暴露面，介电环306具有围绕边缘环311的等离子体暴露面，绝缘环315位于边缘环311的下面，固定接地环340由导电材料组成、位于介电环306的下面并围绕绝缘环315。可移动接地环400被支撑于可抑压的柱塞350 之上，该柱塞350被支撑于固定接地环340之上。可移动接地环400相对于固定接地环340可竖直移动以便在可移动衬底支撑组件310移动到上部位置时使可移动接地环400与限定环305电接触。可移动衬底支撑组件310可被支撑于电接地偏压壳体360之上。
固定接地环340可包括三个柱塞支撑孔，在底部壁(bottom wall)的外层部分沿圆周间隔分开(circumferentially spaced apart)，每个柱塞支撑孔与含有可抑压销的柱塞支撑壳体啮合，使得销的上端延伸到底部壁的上表面之上。
图4A-4C所示为可移动接地环400的细节。可移动接地环400包含环形底部壁402和从该底部壁402的内圆周向上延伸的侧壁401。侧壁401具有内表面401a，内表面401a被配置为围绕固定接地环340的外圆周，使得可移动接地环400相对于固定接地环340可竖直移动。
如图4B中所示，可移动接地环400优选地在内表面401a中具有台阶(step)440，该台阶440由从侧壁401的上表面401b延伸而来的竖直表面440a和延伸于内表面401a与竖直表面440a之间的水平表面440b形成。如图4C中所示，水平表面440b包括多个适于接收竖直销499的盲孔440h，这些竖直销499与耗材隔离环320(见图3A-3B)下表面中的定位孔配对，该耗材隔离环320适于在可移动衬底支撑组件310处于下部位置时电隔离侧壁401的上端和介电环306。
如图5A中所示，耗材隔离环320在其下表面中包括多个定中心的凹处321。这些凹处321被配置为接收从台阶440水平表面440b中的盲孔440h延伸而来的竖直销499，每个竖直销499被定位于各自的一个定中心凹处321中。
在一种实施方式中，如图5A-5C中所示，耗材隔离环320具有内径大约14.8英寸，外径大约15.1英寸，高大约0.3英寸的矩形截面。三个方位角间距120°的凹处被设置于该耗材隔离环320的下外角(lower outer corner)。每个凹处321具有直径大约为0.1英寸的半圆柱壁部分321a。半圆柱壁部分321a的中心轴位于离耗材隔离环320的中心轴大约7.5英寸的半径上。半圆柱壁部分321a与在耗材隔离环320外表面上有开口的直壁部分321b相连接。直壁部分321b的宽度等于半圆柱壁部分321a的直径。凹处321的深度大约为0.09英寸。凹处321的所有边缘优选地具有大约0.02英寸宽的45°切角。凹处321被配置为消解耗材隔离环320和可移动接地环400的热膨胀系数的偏差，凹处321优选地由铝制成，且在耗材隔离环320和可移动接地环400所处的温度范围内将耗材隔离环320中心对齐可移动接地环400的中心。如图3A、3B、4B、4C和5C中所示，当耗材隔离环320被支撑于可移动接地环400的台阶440之上时，耗材隔离环320的内表面320b与可移动接地环400的侧壁401的内表面401a基本上是同延的(coextensive)，耗材隔离环320的上表面320a与可移动接地环400的侧壁401的上表面401b基本上是同延的。
耗材隔离环320可由一种或多种合适的材料如石英、硅、碳化硅、氧化钇、氧化铝、或者喷涂涂层后的金属制成。优选地，耗材隔离环320由石英制成。
尽管已参照耗材隔离环的具体实施方式对其进行了详细描述，但对本领域技术人员而言，显然可以作出各种变更和修改以及使用等同方式，而不背离所附权利要求书的范围。
Claims (5)
1.一种可调间隔电容耦合等离子体处理室的耗材隔离环，
所述耗材隔离环具有内径大约14.8英寸、外径大约15.1英寸、高大约0.3英寸的矩形截面，以及设置于所述耗材隔离环的下外缘、方位角间距为120°的三个凹处，其中：
每个凹处具有直径大约为0.1英寸的半圆柱壁部分，所述半圆柱壁部分的中心轴位于离所述耗材隔离环的中心轴大约7.5英寸的半径上；
每个凹处具有在所述耗材隔离环外表面上有开口的直壁部分，所述直壁部分宽度等于所述半圆柱壁部分的直径，并且与所述半圆柱壁部分相连接；以及
每个凹处深度大约为0.09英寸。
2.如权利要求1所述的耗材隔离环，其中所述凹处的所有边缘具有大约0.02英寸宽的45°切角。
3.如权利要求1所述的耗材隔离环，其配置为被支撑于可移动接地环的台阶之上，其中：
所述可移动接地环被配置为适配可移动衬底支撑组件的固定接地环并提供至可移动衬底支撑组件的固定接地环的射频返回路径，所述可移动衬底支撑组件被配置为支撑进行等离子体处理的半导体衬底，
所述可移动接地环包含环形底部壁和从所述底部壁的内圆周向上延伸的侧壁，所述侧壁具有被配置为围绕所述固定接 地环外圆周的内表面，使得所述可移动接地环相对于所述固定接地环可竖直移动，
所述台阶由从所述侧壁的上表面延伸而来的竖直表面和延伸于所述内表面与所述竖直表面之间的水平表面形成，所述水平表面包括多个适于接收销的盲孔，所述销与所述耗材隔离环的所述凹处配对。
4.如权利要求1所述的耗材隔离环，其中当所述耗材隔离环被支撑于所述可移动接地环的所述台阶之上时，所述耗材隔离环的内表面与所述可移动接地环的所述侧壁的所述内表面基本上是同延的，并且所述耗材隔离环的上表面与所述可移动接地环的所述侧壁的所述上表面基本上是同延的。
5.如权利要求1所述的耗材隔离环，其配置为电隔离所述可移动接地环和所述可移动衬底支撑组件的介电环，其中所述介电环具有围绕边缘环的等离子体暴露面。
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- 2011-06-27 CN CN2011202217170U patent/CN202307788U/zh not_active Expired - Lifetime
- 2011-06-28 DE DE202011102439U patent/DE202011102439U1/de not_active Expired - Lifetime
- 2011-06-29 KR KR2020110005921U patent/KR200479295Y1/ko active IP Right Grant
- 2011-06-30 TW TW100220376U patent/TWM432139U/zh not_active IP Right Cessation
- 2011-08-29 JP JP2011005035U patent/JP3171623U/ja not_active Expired - Lifetime
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2015
- 2015-10-27 US US14/923,560 patent/US20160050781A1/en not_active Abandoned
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985623A (zh) * | 2012-08-31 | 2014-08-13 | 朗姆研究公司 | 等离子体处理系统中的射频（rf）接地返回及其方法 |
| CN103985623B (zh) * | 2012-08-31 | 2016-06-29 | 朗姆研究公司 | 等离子体处理系统中的射频（rf）接地返回及其方法 |
| CN109023310A (zh) * | 2017-06-12 | 2018-12-18 | 应用材料公司 | 用于半导体处理腔室隔离以实现减少的颗粒和改善的均匀性的方法和设备 |
| CN112424901A (zh) * | 2018-07-10 | 2021-02-26 | 能源环境和技术研究中心 | 用于回旋加速器的低腐蚀内部离子源 |
| CN112424901B (zh) * | 2018-07-10 | 2024-02-13 | 能源环境和技术研究中心 | 用于回旋加速器的低腐蚀内部离子源 |
| CN111326382A (zh) * | 2018-12-17 | 2020-06-23 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| CN113035679A (zh) * | 2019-12-24 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置 |
| CN113035679B (zh) * | 2019-12-24 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置 |
| CN111501025A (zh) * | 2020-04-23 | 2020-08-07 | 北京北方华创微电子装备有限公司 | 沉积设备 |
| CN111501025B (zh) * | 2020-04-23 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 沉积设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE202011102439U1 (de) | 2011-08-17 |
| JP3171623U (ja) | 2011-11-10 |
| KR200479295Y1 (ko) | 2016-01-13 |
| US20160050781A1 (en) | 2016-02-18 |
| US9171702B2 (en) | 2015-10-27 |
| US20120000605A1 (en) | 2012-01-05 |
| TWM432139U (en) | 2012-06-21 |
| KR20120000232U (ko) | 2012-01-05 |
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