TWI912126B - 基板載置台及基板處理裝置 - Google Patents

基板載置台及基板處理裝置

Info

Publication number
TWI912126B
TWI912126B TW114103600A TW114103600A TWI912126B TW I912126 B TWI912126 B TW I912126B TW 114103600 A TW114103600 A TW 114103600A TW 114103600 A TW114103600 A TW 114103600A TW I912126 B TWI912126 B TW I912126B
Authority
TW
Taiwan
Prior art keywords
layer
region
resin
substrate mounting
mounting stage
Prior art date
Application number
TW114103600A
Other languages
English (en)
Chinese (zh)
Other versions
TW202522682A (zh
Inventor
多賀敏
佐藤直行
西田辰夫
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202522682A publication Critical patent/TW202522682A/zh
Application granted granted Critical
Publication of TWI912126B publication Critical patent/TWI912126B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
TW114103600A 2018-12-27 2019-12-19 基板載置台及基板處理裝置 TWI912126B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018244752 2018-12-27
JP2018-244752 2018-12-27
JP2019-203311 2019-11-08
JP2019203311A JP7401266B2 (ja) 2018-12-27 2019-11-08 基板載置台、及び、基板処理装置

Publications (2)

Publication Number Publication Date
TW202522682A TW202522682A (zh) 2025-06-01
TWI912126B true TWI912126B (zh) 2026-01-11

Family

ID=71450955

Family Applications (3)

Application Number Title Priority Date Filing Date
TW114103600A TWI912126B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置
TW113105681A TWI875481B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置
TW108146624A TWI835953B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW113105681A TWI875481B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置
TW108146624A TWI835953B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置

Country Status (5)

Country Link
US (3) US11217470B2 (https=)
JP (3) JP7401266B2 (https=)
KR (2) KR102902396B1 (https=)
CN (2) CN119480758A (https=)
TW (3) TWI912126B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
WO2021261391A1 (ja) 2020-06-23 2021-12-30 住友化学株式会社 樹脂組成物、硬化物、プリプレグ、樹脂組成物の製造方法、及び芳香族ポリスルホン樹脂
JP7619862B2 (ja) * 2021-03-30 2025-01-22 東京エレクトロン株式会社 基板載置台の研磨方法及び基板処理装置
US12198903B2 (en) * 2021-12-10 2025-01-14 Applied Materials, Inc. Plasma resistant arc preventative coatings for manufacturing equipment components
US12469733B2 (en) 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
JP7248167B1 (ja) 2022-03-03 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7203260B1 (ja) * 2022-03-30 2023-01-12 住友大阪セメント株式会社 静電チャック部材、静電チャック装置及び静電チャック部材の製造方法
JP7248182B1 (ja) 2022-08-30 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7529008B2 (ja) * 2022-12-23 2024-08-06 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP2024090654A (ja) * 2022-12-23 2024-07-04 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008117982A (ja) * 2006-11-06 2008-05-22 Tokyo Electron Ltd 載置装置、プラズマ処理装置及びプラズマ処理方法
US20140204501A1 (en) * 2013-01-18 2014-07-24 Sumitomo Osaka Cement Co., Ltd. Electrostatic chucking device
TW201643991A (zh) * 2015-03-31 2016-12-16 住友大阪水泥股份有限公司 靜電夾盤裝置
US20180122679A1 (en) * 2016-10-28 2018-05-03 Applied Materials, Inc. Stress balanced electrostatic substrate carrier with contacts

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204326A (ja) * 1993-01-05 1994-07-22 Tokyo Electron Ltd 静電チャック
JPH06338476A (ja) * 1993-03-31 1994-12-06 Tokyo Electron Ltd プラズマ処理方法
JPH07335732A (ja) * 1994-06-14 1995-12-22 Tokyo Electron Ltd 静電チャック、これを用いたプラズマ処理装置及びこの製造方法
JP3819538B2 (ja) * 1997-06-16 2006-09-13 芝浦メカトロニクス株式会社 静電チャック装置及び載置台
JP3078506B2 (ja) * 1997-06-26 2000-08-21 芝浦メカトロニクス株式会社 静電チャック装置及び載置台
JP4053148B2 (ja) 1998-07-28 2008-02-27 株式会社エフオーアイ プラズマ処理装置
JP2000286332A (ja) 1999-03-31 2000-10-13 Shibaura Mechatronics Corp ドライエッチング用静電チャック装置及び載置台
JP2003060020A (ja) * 2001-06-07 2003-02-28 Komatsu Ltd 静電チャック装置
TW541586B (en) * 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
JP4129152B2 (ja) * 2002-08-06 2008-08-06 東京エレクトロン株式会社 基板載置部材およびそれを用いた基板処理装置
JP4542959B2 (ja) * 2005-07-14 2010-09-15 東京エレクトロン株式会社 静電吸着電極、基板処理装置および静電吸着電極の製造方法
JP5054022B2 (ja) 2006-10-31 2012-10-24 株式会社巴川製紙所 静電チャック装置
JP2008187006A (ja) 2007-01-30 2008-08-14 Tomoegawa Paper Co Ltd 静電チャック装置
KR20100046909A (ko) * 2008-10-28 2010-05-07 주성엔지니어링(주) 정전 흡착 장치와 그의 제조방법
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
KR101134736B1 (ko) * 2010-04-26 2012-04-13 가부시키가이샤 크리에이티브 테크놀러지 스페이서를 구비하는 정전 척 및 그 제조방법
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
JP6540022B2 (ja) * 2014-12-26 2019-07-10 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6341457B1 (ja) * 2017-03-29 2018-06-13 Toto株式会社 静電チャック

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008117982A (ja) * 2006-11-06 2008-05-22 Tokyo Electron Ltd 載置装置、プラズマ処理装置及びプラズマ処理方法
US20140204501A1 (en) * 2013-01-18 2014-07-24 Sumitomo Osaka Cement Co., Ltd. Electrostatic chucking device
TW201643991A (zh) * 2015-03-31 2016-12-16 住友大阪水泥股份有限公司 靜電夾盤裝置
US20180122679A1 (en) * 2016-10-28 2018-05-03 Applied Materials, Inc. Stress balanced electrostatic substrate carrier with contacts

Also Published As

Publication number Publication date
TW202038376A (zh) 2020-10-16
US11676847B2 (en) 2023-06-13
US11508603B2 (en) 2022-11-22
US20200211885A1 (en) 2020-07-02
JP2020107881A (ja) 2020-07-09
CN119480757A (zh) 2025-02-18
JP7595143B2 (ja) 2024-12-05
JP2025026909A (ja) 2025-02-26
CN119480758A (zh) 2025-02-18
JP7825691B2 (ja) 2026-03-06
JP7401266B2 (ja) 2023-12-19
KR20250168128A (ko) 2025-12-02
TWI835953B (zh) 2024-03-21
US11217470B2 (en) 2022-01-04
KR102902396B1 (ko) 2025-12-22
US20220084867A1 (en) 2022-03-17
TWI875481B (zh) 2025-03-01
TW202522682A (zh) 2025-06-01
TW202422780A (zh) 2024-06-01
KR20200081254A (ko) 2020-07-07
US20230065448A1 (en) 2023-03-02
JP2024022653A (ja) 2024-02-16

Similar Documents

Publication Publication Date Title
TWI912126B (zh) 基板載置台及基板處理裝置
CN109216253B (zh) 静电卡盘的制造方法和静电卡盘
JP6984126B2 (ja) ガス供給装置、プラズマ処理装置及びガス供給装置の製造方法
JP5293211B2 (ja) 静電チャックおよび静電チャックの製造方法
JP7126431B2 (ja) シャワーヘッドおよびガス処理装置
CN100390957C (zh) 基板保持部件及基板处理装置
JP2010258280A (ja) 静電チャックおよび静電チャックの製造方法
TWI816448B (zh) 內壁構件的再生方法
JP2025061168A (ja) 基板載置台の研磨方法及び基板載置台
CN111383986B (zh) 基板载置台及基板处理装置
JP2021197548A (ja) エッジリング及びプラズマ処理装置
KR102802280B1 (ko) 내벽 부재의 재생 방법
TW202520427A (zh) 基板載置台、基板處理裝置及基板處理方法
CN121969065A (zh) 基板支承单元以及包括其的基板处理装置