JP7401266B2 - 基板載置台、及び、基板処理装置 - Google Patents

基板載置台、及び、基板処理装置 Download PDF

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Publication number
JP7401266B2
JP7401266B2 JP2019203311A JP2019203311A JP7401266B2 JP 7401266 B2 JP7401266 B2 JP 7401266B2 JP 2019203311 A JP2019203311 A JP 2019203311A JP 2019203311 A JP2019203311 A JP 2019203311A JP 7401266 B2 JP7401266 B2 JP 7401266B2
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resin
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Japanese (ja)
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JP2020107881A (ja
JP2020107881A5 (https=
Inventor
敏 多賀
直行 佐藤
辰夫 西田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020190170645A priority Critical patent/KR102902396B1/ko
Priority to US16/721,086 priority patent/US11217470B2/en
Priority to TW108146624A priority patent/TWI835953B/zh
Priority to CN201911314810.3A priority patent/CN111383986B/zh
Priority to CN202411607234.2A priority patent/CN119480757A/zh
Priority to CN202411607236.1A priority patent/CN119480758A/zh
Priority to TW114103600A priority patent/TWI912126B/zh
Priority to TW113105681A priority patent/TWI875481B/zh
Publication of JP2020107881A publication Critical patent/JP2020107881A/ja
Priority to US17/534,150 priority patent/US11508603B2/en
Publication of JP2020107881A5 publication Critical patent/JP2020107881A5/ja
Priority to US18/047,248 priority patent/US11676847B2/en
Priority to JP2023207051A priority patent/JP7595143B2/ja
Application granted granted Critical
Publication of JP7401266B2 publication Critical patent/JP7401266B2/ja
Priority to JP2024197423A priority patent/JP7825691B2/ja
Priority to KR1020250180835A priority patent/KR20250168128A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
JP2019203311A 2018-12-27 2019-11-08 基板載置台、及び、基板処理装置 Active JP7401266B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
US16/721,086 US11217470B2 (en) 2018-12-27 2019-12-19 Substrate placing table and substrate processing apparatus
TW108146624A TWI835953B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置
CN201911314810.3A CN111383986B (zh) 2018-12-27 2019-12-19 基板载置台及基板处理装置
CN202411607234.2A CN119480757A (zh) 2018-12-27 2019-12-19 基板载置台及基板处理装置
CN202411607236.1A CN119480758A (zh) 2018-12-27 2019-12-19 基板载置台及基板处理装置
TW114103600A TWI912126B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置
TW113105681A TWI875481B (zh) 2018-12-27 2019-12-19 基板載置台及基板處理裝置
KR1020190170645A KR102902396B1 (ko) 2018-12-27 2019-12-19 기판 재치대, 및, 기판 처리 장치
US17/534,150 US11508603B2 (en) 2018-12-27 2021-11-23 Substrate placing table and substrate processing apparatus
US18/047,248 US11676847B2 (en) 2018-12-27 2022-10-17 Substrate placing table and substrate processing apparatus
JP2023207051A JP7595143B2 (ja) 2018-12-27 2023-12-07 基板支持器、及び、プラズマ処理装置
JP2024197423A JP7825691B2 (ja) 2018-12-27 2024-11-12 基板支持器、及び、プラズマ処理装置
KR1020250180835A KR20250168128A (ko) 2018-12-27 2025-11-25 기판 재치대, 및, 기판 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018244752 2018-12-27
JP2018244752 2018-12-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023207051A Division JP7595143B2 (ja) 2018-12-27 2023-12-07 基板支持器、及び、プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2020107881A JP2020107881A (ja) 2020-07-09
JP2020107881A5 JP2020107881A5 (https=) 2022-07-27
JP7401266B2 true JP7401266B2 (ja) 2023-12-19

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JP2019203311A Active JP7401266B2 (ja) 2018-12-27 2019-11-08 基板載置台、及び、基板処理装置
JP2023207051A Active JP7595143B2 (ja) 2018-12-27 2023-12-07 基板支持器、及び、プラズマ処理装置
JP2024197423A Active JP7825691B2 (ja) 2018-12-27 2024-11-12 基板支持器、及び、プラズマ処理装置

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JP2023207051A Active JP7595143B2 (ja) 2018-12-27 2023-12-07 基板支持器、及び、プラズマ処理装置
JP2024197423A Active JP7825691B2 (ja) 2018-12-27 2024-11-12 基板支持器、及び、プラズマ処理装置

Country Status (5)

Country Link
US (3) US11217470B2 (https=)
JP (3) JP7401266B2 (https=)
KR (2) KR102902396B1 (https=)
CN (2) CN119480758A (https=)
TW (3) TWI912126B (https=)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
WO2021261391A1 (ja) 2020-06-23 2021-12-30 住友化学株式会社 樹脂組成物、硬化物、プリプレグ、樹脂組成物の製造方法、及び芳香族ポリスルホン樹脂
JP7619862B2 (ja) * 2021-03-30 2025-01-22 東京エレクトロン株式会社 基板載置台の研磨方法及び基板処理装置
US12198903B2 (en) * 2021-12-10 2025-01-14 Applied Materials, Inc. Plasma resistant arc preventative coatings for manufacturing equipment components
US12469733B2 (en) 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
JP7248167B1 (ja) 2022-03-03 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7203260B1 (ja) * 2022-03-30 2023-01-12 住友大阪セメント株式会社 静電チャック部材、静電チャック装置及び静電チャック部材の製造方法
JP7248182B1 (ja) 2022-08-30 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP7529008B2 (ja) * 2022-12-23 2024-08-06 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP2024090654A (ja) * 2022-12-23 2024-07-04 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286332A (ja) 1999-03-31 2000-10-13 Shibaura Mechatronics Corp ドライエッチング用静電チャック装置及び載置台
WO2008053934A1 (fr) 2006-10-31 2008-05-08 Tomoegawa Co., Ltd. Mandrin électrostatique
JP2013502721A (ja) 2009-08-21 2013-01-24 コミコ株式会社 静電チャック及びその製造方法
WO2016158110A1 (ja) 2015-03-31 2016-10-06 住友大阪セメント株式会社 静電チャック装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204326A (ja) * 1993-01-05 1994-07-22 Tokyo Electron Ltd 静電チャック
JPH06338476A (ja) * 1993-03-31 1994-12-06 Tokyo Electron Ltd プラズマ処理方法
JPH07335732A (ja) * 1994-06-14 1995-12-22 Tokyo Electron Ltd 静電チャック、これを用いたプラズマ処理装置及びこの製造方法
JP3819538B2 (ja) * 1997-06-16 2006-09-13 芝浦メカトロニクス株式会社 静電チャック装置及び載置台
JP3078506B2 (ja) * 1997-06-26 2000-08-21 芝浦メカトロニクス株式会社 静電チャック装置及び載置台
JP4053148B2 (ja) 1998-07-28 2008-02-27 株式会社エフオーアイ プラズマ処理装置
JP2003060020A (ja) * 2001-06-07 2003-02-28 Komatsu Ltd 静電チャック装置
TW541586B (en) * 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
JP4129152B2 (ja) * 2002-08-06 2008-08-06 東京エレクトロン株式会社 基板載置部材およびそれを用いた基板処理装置
JP4542959B2 (ja) * 2005-07-14 2010-09-15 東京エレクトロン株式会社 静電吸着電極、基板処理装置および静電吸着電極の製造方法
JP4992389B2 (ja) 2006-11-06 2012-08-08 東京エレクトロン株式会社 載置装置、プラズマ処理装置及びプラズマ処理方法
JP2008187006A (ja) 2007-01-30 2008-08-14 Tomoegawa Paper Co Ltd 静電チャック装置
KR20100046909A (ko) * 2008-10-28 2010-05-07 주성엔지니어링(주) 정전 흡착 장치와 그의 제조방법
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
KR101134736B1 (ko) * 2010-04-26 2012-04-13 가부시키가이샤 크리에이티브 테크놀러지 스페이서를 구비하는 정전 척 및 그 제조방법
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2014138164A (ja) * 2013-01-18 2014-07-28 Sumitomo Osaka Cement Co Ltd 静電チャック装置
US10389278B2 (en) * 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
JP6540022B2 (ja) * 2014-12-26 2019-07-10 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US20180122679A1 (en) * 2016-10-28 2018-05-03 Applied Materials, Inc. Stress balanced electrostatic substrate carrier with contacts
JP6341457B1 (ja) * 2017-03-29 2018-06-13 Toto株式会社 静電チャック

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286332A (ja) 1999-03-31 2000-10-13 Shibaura Mechatronics Corp ドライエッチング用静電チャック装置及び載置台
WO2008053934A1 (fr) 2006-10-31 2008-05-08 Tomoegawa Co., Ltd. Mandrin électrostatique
JP2013502721A (ja) 2009-08-21 2013-01-24 コミコ株式会社 静電チャック及びその製造方法
WO2016158110A1 (ja) 2015-03-31 2016-10-06 住友大阪セメント株式会社 静電チャック装置

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