JP2020107881A - 基板載置台、及び、基板処理装置 - Google Patents
基板載置台、及び、基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 186
- 239000010410 layer Substances 0.000 claims abstract description 353
- 229920005989 resin Polymers 0.000 claims abstract description 104
- 239000011347 resin Substances 0.000 claims abstract description 104
- 239000011247 coating layer Substances 0.000 claims abstract description 57
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 46
- 239000002245 particle Substances 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 11
- 239000004925 Acrylic resin Substances 0.000 claims description 10
- 229920000178 Acrylic resin Polymers 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 10
- 239000009719 polyimide resin Substances 0.000 claims description 10
- 229920002050 silicone resin Polymers 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 43
- 239000012790 adhesive layer Substances 0.000 description 29
- 230000004048 modification Effects 0.000 description 24
- 238000012986 modification Methods 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 238000005507 spraying Methods 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
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Abstract
Description
Claims (20)
- 基板載置台であって、
基台と、
前記基台の上に設けられた静電チャックと、
を備え、
前記静電チャックは、
前記基台の上に設けられた積層部と、
前記積層部の上に設けられた中間層と、
前記中間層の上に設けられた被覆層と、
を備え、
前記積層部は、前記基台の上に設けられた第1の層、該第1の層上に設けられた電極層、該電極層上に設けられた第2の層を備え、
前記中間層は、前記第2の層と前記被覆層との間に設けられ、該第2の層と該被覆層とに密着しており、
前記第2の層は、樹脂層であり、
前記被覆層は、セラミックスである、
基板載置台。 - 前記第1の層は、樹脂層である、
請求項1に記載の基板載置台。 - 前記基台は、本体部と該基台の側面に設けられた側壁部とを備え、
前記静電チャックは、前記本体部及び前記側壁部の上に配置され、
前記第1の層及び前記第2の層の各々の径は、前記本体部の径よりも大きく、
前記第1の層及び前記第2の層は、前記側壁部とオーバーラップするように前記基台の上に延在している、
請求項2に記載の基板載置台。 - 前記中間層は、前記積層部の側面を覆う端部領域を備え、
前記端部領域は、前記基台に接しており、前記積層部から離隔する方向に先細るテーパ形状を有する、
請求項2又は3に記載の基板載置台。 - 前記端部領域のテーパ角は、45°以下である、
請求項4に記載の基板載置台。 - 前記第1の層の材料及び前記第2の層の材料は、ポリイミド樹脂、シリコーン樹脂、エポキシ樹脂又はアクリル樹脂の何れかである、
請求項2〜5の何れか一項に記載の基板載置台。 - 端部領域を更に備え、
前記端部領域は、前記積層部の側面を覆い、
前記端部領域の材料は、樹脂又は絶縁物であり、
前記第1の層は、絶縁層又は樹脂層である、
請求項1に記載の基板載置台。 - 前記第1の層が絶縁層の場合における該第1の層の材料は、セラミックであり、
前記第1の層が樹脂層の場合における該第1の層の材料は、ポリイミド樹脂、シリコーン樹脂、エポキシ樹脂又はアクリル樹脂の何れかであり、
前記第2の層の材料は、ポリイミド樹脂、シリコーン樹脂、エポキシ樹脂又はアクリル樹脂の何れかである、
請求項7に記載の基板載置台。 - 樹脂の前記端部領域は、前記積層部から離隔する方向に先細るテーパ形状を有する、
請求項7又は8に記載の基板載置台。 - 前記基台は、該基台の表面に絶縁領域を有し、
前記絶縁領域は前記積層部の側面に沿って延びている箇所を有しており、樹脂の前記端部領域は該積層部の該側面と該絶縁領域の当該箇所との間に設けられている、
請求項7又は8に記載の基板載置台。 - 前記基台は、本体部と該基台の側面に設けられた側壁部とを備え、
前記静電チャックは、前記本体部及び前記側壁部の上に配置され、
前記第1の層及び前記第2の層の各々の内径は、前記本体部の内径よりも小さく、
前記第1の層及び前記第2の層は、前記側壁部とオーバーラップするように前記基台の上に延在しており、
前記側壁部の表面は前記積層部の側面に沿って延びている箇所を有しており、樹脂の前記端部領域は該積層部の該側面と該側壁部の該表面の当該箇所との間に設けられている、
請求項7又は8に記載の基板載置台。 - 前記電極層の径は、前記第1の層及び前記第2の層の各々の径よりも小さい、
請求項1〜11の何れか一項に記載の基板載置台。 - 前記中間層は、前記基台に設けられている前記積層部の全表面を被覆する、
請求項1〜12の何れか一項に記載の基板載置台。 - 前記中間層は、前記側壁部の一部を覆う、
請求項3又は11に記載の基板載置台。 - 前記被覆層は、下地層と複数の凸部とを備え、
前記下地層は、前記中間層に密着しており、
複数の前記凸部は、前記下地層の上面に設けられる、
請求項1〜14の何れか一項に記載の基板載置台。 - 前記下地層の上面の表面粗さは、0.05〜0.5μmである、
請求項15に記載の基板載置台。 - 前記中間層は、基体と該基体中に分散した複数の粒状体とを含み、
複数の前記粒状体は、前記基体から露出している露出部分を含み、該露出部分は、前記第2の層及び前記被覆層に接する、
請求項1〜16の何れか一項に記載の基板載置台。 - 前記基体の材料は、樹脂又はシラン系剤を含有し、
前記粒状体の材料は、セラミックである、
請求項17に記載の基板載置台。 - 請求項1〜18の何れか一項に記載の基板載置台を備える基板処理装置。
- 高周波電源を備え、
前記高周波電源は、前記基板載置台に接続され、3MHz以下の高周波電力を該基板載置台に供給する、
請求項19に記載の基板処理装置。
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JP7203260B1 (ja) | 2022-03-30 | 2023-01-12 | 住友大阪セメント株式会社 | 静電チャック部材、静電チャック装置及び静電チャック部材の製造方法 |
JP7248182B1 (ja) | 2022-08-30 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
JP7248167B1 (ja) | 2022-03-03 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
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JP7228989B2 (ja) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | 載置台、エッジリングの位置決め方法及び基板処理装置 |
JP2022154714A (ja) * | 2021-03-30 | 2022-10-13 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板処理装置 |
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