TWI908733B - 在區域選擇沉積中減緩側向膜成長的方法 - Google Patents

在區域選擇沉積中減緩側向膜成長的方法

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Publication number
TWI908733B
TWI908733B TW109124199A TW109124199A TWI908733B TW I908733 B TWI908733 B TW I908733B TW 109124199 A TW109124199 A TW 109124199A TW 109124199 A TW109124199 A TW 109124199A TW I908733 B TWI908733 B TW I908733B
Authority
TW
Taiwan
Prior art keywords
film
metal
barrier layer
processing method
substrate processing
Prior art date
Application number
TW109124199A
Other languages
English (en)
Chinese (zh)
Other versions
TW202113119A (zh
Inventor
坎達巴拉 Ｎ 泰伯利
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202113119A publication Critical patent/TW202113119A/zh
Application granted granted Critical
Publication of TWI908733B publication Critical patent/TWI908733B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
TW109124199A 2019-07-18 2020-07-17 在區域選擇沉積中減緩側向膜成長的方法 TWI908733B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962875882P 2019-07-18 2019-07-18
US62/875,882 2019-07-18

Publications (2)

Publication Number Publication Date
TW202113119A TW202113119A (zh) 2021-04-01
TWI908733B true TWI908733B (zh) 2025-12-21

Family

ID=74209997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109124199A TWI908733B (zh) 2019-07-18 2020-07-17 在區域選擇沉積中減緩側向膜成長的方法

Country Status (5)

Country Link
US (1) US11804376B2 (https=)
JP (1) JP7531981B2 (https=)
KR (1) KR102780321B1 (https=)
TW (1) TWI908733B (https=)
WO (1) WO2021011761A1 (https=)

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WO2021162871A1 (en) 2020-02-13 2021-08-19 Lam Research Corporation High aspect ratio etch with infinite selectivity
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JP2022137698A (ja) * 2021-03-09 2022-09-22 東京エレクトロン株式会社 成膜方法および成膜システム
US20240030062A1 (en) * 2021-04-16 2024-01-25 Lam Research Corporation Integration of fully aligned via through selective deposition and resistivity reduction
JP7583669B2 (ja) * 2021-04-30 2024-11-14 東京応化工業株式会社 表面処理方法、基板表面の領域選択的製膜方法及び表面処理剤
JP2024523510A (ja) * 2021-07-06 2024-06-28 東京エレクトロン株式会社 自己組織化単分子層を使用する選択的な膜形成
JP7833545B2 (ja) * 2021-11-26 2026-03-19 ソウルブレイン シーオー．， エルティーディー． 高誘電率薄膜用マスキング剤、それを利用した選択領域蒸着方法、それから製造された半導体基板及び半導体素子
JP2023117045A (ja) * 2022-02-10 2023-08-23 東京エレクトロン株式会社 基板処理方法
JP7853009B2 (ja) * 2022-02-14 2026-04-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2023142601A (ja) * 2022-03-25 2023-10-05 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2023204453A1 (ko) * 2022-04-19 2023-10-26 인천대학교 산학협력단 영역-선택적 원자층 증착법을 이용한 박막의 선택적 증착방법 및 박막이 선택적으로 형성된 기판
CN119096004A (zh) * 2022-04-19 2024-12-06 仁川大学校产学协力团 使用原子层沉积法的薄膜的区域选择性沉积方法以及选择性形成薄膜的基板
JP2025044774A (ja) * 2023-09-20 2025-04-02 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20250185329A1 (en) * 2023-12-04 2025-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Selective formation of etch stop layers and the structures thereof

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Also Published As

Publication number Publication date
JP7531981B2 (ja) 2024-08-13
JP2022541535A (ja) 2022-09-26
US11804376B2 (en) 2023-10-31
US20210020444A1 (en) 2021-01-21
WO2021011761A1 (en) 2021-01-21
KR102780321B1 (ko) 2025-03-11
TW202113119A (zh) 2021-04-01
KR20220034785A (ko) 2022-03-18

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