JP7531981B2 - 領域選択的堆積における横方向のフィルム成長を緩和するための方法 - Google Patents

領域選択的堆積における横方向のフィルム成長を緩和するための方法 Download PDF

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JP7531981B2
JP7531981B2 JP2022503017A JP2022503017A JP7531981B2 JP 7531981 B2 JP7531981 B2 JP 7531981B2 JP 2022503017 A JP2022503017 A JP 2022503017A JP 2022503017 A JP2022503017 A JP 2022503017A JP 7531981 B2 JP7531981 B2 JP 7531981B2
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film
metal
sam
blocking layer
forming
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JP2022541535A (ja
JP2022541535A5 (https=
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タピリー，カンダバラ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

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  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2022503017A 2019-07-18 2020-07-16 領域選択的堆積における横方向のフィルム成長を緩和するための方法 Active JP7531981B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962875882P 2019-07-18 2019-07-18
US62/875,882 2019-07-18
PCT/US2020/042305 WO2021011761A1 (en) 2019-07-18 2020-07-16 Method for mitigating laterial film growth in area selective deposition

Publications (3)

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JP2022541535A JP2022541535A (ja) 2022-09-26
JP2022541535A5 JP2022541535A5 (https=) 2023-06-21
JP7531981B2 true JP7531981B2 (ja) 2024-08-13

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US (1) US11804376B2 (https=)
JP (1) JP7531981B2 (https=)
KR (1) KR102780321B1 (https=)
TW (1) TWI908733B (https=)
WO (1) WO2021011761A1 (https=)

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WO2021162871A1 (en) 2020-02-13 2021-08-19 Lam Research Corporation High aspect ratio etch with infinite selectivity
KR102866849B1 (ko) 2020-02-19 2025-10-01 램 리써치 코포레이션 그래핀 통합 (graphene integration)
JP2022137698A (ja) * 2021-03-09 2022-09-22 東京エレクトロン株式会社 成膜方法および成膜システム
US20240030062A1 (en) * 2021-04-16 2024-01-25 Lam Research Corporation Integration of fully aligned via through selective deposition and resistivity reduction
JP7583669B2 (ja) * 2021-04-30 2024-11-14 東京応化工業株式会社 表面処理方法、基板表面の領域選択的製膜方法及び表面処理剤
JP2024523510A (ja) * 2021-07-06 2024-06-28 東京エレクトロン株式会社 自己組織化単分子層を使用する選択的な膜形成
JP7833545B2 (ja) * 2021-11-26 2026-03-19 ソウルブレイン シーオー．， エルティーディー． 高誘電率薄膜用マスキング剤、それを利用した選択領域蒸着方法、それから製造された半導体基板及び半導体素子
JP2023117045A (ja) * 2022-02-10 2023-08-23 東京エレクトロン株式会社 基板処理方法
JP7853009B2 (ja) * 2022-02-14 2026-04-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2023142601A (ja) * 2022-03-25 2023-10-05 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2023204453A1 (ko) * 2022-04-19 2023-10-26 인천대학교 산학협력단 영역-선택적 원자층 증착법을 이용한 박막의 선택적 증착방법 및 박막이 선택적으로 형성된 기판
CN119096004A (zh) * 2022-04-19 2024-12-06 仁川大学校产学协力团 使用原子层沉积法的薄膜的区域选择性沉积方法以及选择性形成薄膜的基板
JP2025044774A (ja) * 2023-09-20 2025-04-02 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20250185329A1 (en) * 2023-12-04 2025-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Selective formation of etch stop layers and the structures thereof

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JP2009256796A (ja) 2008-03-27 2009-11-05 Horiba Ltd 単分子膜形成装置及び方法
JP2013508989A (ja) 2009-10-26 2013-03-07 アイメック 有機デバイスの製造方法
JP2016513594A (ja) 2013-03-15 2016-05-16 エーエスエムエル ネザーランズ ビー．ブイ． ブロック共重合体の自己組織化によって基板上にリソグラフィフィーチャを提供する方法
JP2018512504A (ja) 2015-02-26 2018-05-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 自己組織化単分子膜を用いた選択的誘電体堆積のための方法
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Also Published As

Publication number Publication date
TWI908733B (zh) 2025-12-21
JP2022541535A (ja) 2022-09-26
US11804376B2 (en) 2023-10-31
US20210020444A1 (en) 2021-01-21
WO2021011761A1 (en) 2021-01-21
KR102780321B1 (ko) 2025-03-11
TW202113119A (zh) 2021-04-01
KR20220034785A (ko) 2022-03-18

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