TWI908674B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法

Info

Publication number
TWI908674B
TWI908674B TW114119310A TW114119310A TWI908674B TW I908674 B TWI908674 B TW I908674B TW 114119310 A TW114119310 A TW 114119310A TW 114119310 A TW114119310 A TW 114119310A TW I908674 B TWI908674 B TW I908674B
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor
semiconductor substrate
forming step
manufacturing
Prior art date
Application number
TW114119310A
Other languages
English (en)
Chinese (zh)
Other versions
TW202536931A (zh
Inventor
五十川良則
山邊浩
蘇尼爾 維克拉馬納亞卡
Original Assignee
日商龍雲股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商龍雲股份有限公司 filed Critical 日商龍雲股份有限公司
Publication of TW202536931A publication Critical patent/TW202536931A/zh
Application granted granted Critical
Publication of TWI908674B publication Critical patent/TWI908674B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B23K26/323—Bonding taking account of the properties of the material involved involving parts made of dissimilar metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B23K26/324—Bonding taking account of the properties of the material involved involving non-metallic parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Micromachines (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
TW114119310A 2022-12-14 2023-12-05 半導體裝置之製造方法 TWI908674B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022199580A JP2024085189A (ja) 2022-12-14 2022-12-14 半導体デバイスの製造方法
JP2022-199580 2022-12-14

Publications (2)

Publication Number Publication Date
TW202536931A TW202536931A (zh) 2025-09-16
TWI908674B true TWI908674B (zh) 2025-12-11

Family

ID=91485696

Family Applications (3)

Application Number Title Priority Date Filing Date
TW114119310A TWI908674B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法
TW114119311A TWI908675B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法
TW112147266A TWI897132B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW114119311A TWI908675B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法
TW112147266A TWI897132B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法

Country Status (6)

Country Link
EP (1) EP4636810A1 (https=)
JP (1) JP2024085189A (https=)
KR (1) KR20250114080A (https=)
CN (1) CN120359595A (https=)
TW (3) TWI908674B (https=)
WO (1) WO2024128057A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025086063A (ja) * 2023-11-27 2025-06-06 タツモ株式会社 半導体デバイスの製造方法
JP2025086064A (ja) * 2023-11-27 2025-06-06 タツモ株式会社 半導体デバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243334A (ja) * 2002-02-20 2003-08-29 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法および電子デバイス
JP2012253367A (ja) * 2008-01-24 2012-12-20 Brewer Science Inc デバイスウェーハーをキャリヤー基板に逆に装着する方法
CN110797297A (zh) * 2018-08-03 2020-02-14 沈阳硅基科技有限公司 使用自控层分离方式制备绝缘层上的硅结构的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4556158B2 (ja) * 2002-10-22 2010-10-06 株式会社Sumco 貼り合わせｓｏｉ基板の製造方法および半導体装置
JP5041714B2 (ja) 2006-03-13 2012-10-03 信越化学工業株式会社 マイクロチップ及びマイクロチップ製造用ｓｏｉ基板
JP5201967B2 (ja) * 2007-12-10 2013-06-05 株式会社半導体エネルギー研究所 半導体基板の作製方法および半導体装置の作製方法
JP5970986B2 (ja) * 2012-07-05 2016-08-17 富士通株式会社 ウエハー基板の製造方法
JP2019012756A (ja) * 2017-06-29 2019-01-24 株式会社テンシックス 半導体素子基板の製造方法
JP7608120B2 (ja) * 2020-11-13 2025-01-06 タツモ株式会社 接合装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243334A (ja) * 2002-02-20 2003-08-29 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法および電子デバイス
JP2012253367A (ja) * 2008-01-24 2012-12-20 Brewer Science Inc デバイスウェーハーをキャリヤー基板に逆に装着する方法
CN110797297A (zh) * 2018-08-03 2020-02-14 沈阳硅基科技有限公司 使用自控层分离方式制备绝缘层上的硅结构的方法

Also Published As

Publication number Publication date
KR20250114080A (ko) 2025-07-28
TWI908675B (zh) 2025-12-11
EP4636810A1 (en) 2025-10-22
TW202536932A (zh) 2025-09-16
TW202536931A (zh) 2025-09-16
TW202425081A (zh) 2024-06-16
WO2024128057A1 (ja) 2024-06-20
JP2024085189A (ja) 2024-06-26
TWI897132B (zh) 2025-09-11
CN120359595A (zh) 2025-07-22

Similar Documents

Publication Publication Date Title
TWI908674B (zh) 半導體裝置之製造方法
JP6319849B2 (ja) 単結晶材料の利用効率を改善した擬似基板
JP2002280531A (ja) 半導体基板及びその製造方法
JP6208572B2 (ja) ＳｉＣウェハの製造方法、ＳｉＣ半導体の製造方法及び黒鉛炭化珪素複合基板
JP2014057035A (ja) 化合物半導体装置の製造方法
CN110663097B (zh) 半导体元件基板的制造方法
JP2006210660A (ja) 半導体基板の製造方法
CN113841223B (zh) 半导体基板的制造方法和半导体装置的制造方法
JP2017139266A (ja) 複合基板、半導体装置、およびこれらの製造方法
CN115241048B (zh) 半导体器件的制作方法以及半导体器件
WO2022210680A1 (ja) パワー半導体及びその製造方法
TWI909840B (zh) 半導體元件之製造方法
TWI909839B (zh) 半導體元件之製造方法
TWI903868B (zh) 複合基板及其製造方法
KR102910144B1 (ko) 소스 기판에서 목적 기판으로 층을 전사하는 방법
CN104798182A (zh) 肖特基势垒二极管及其制造方法
US8546237B2 (en) Transferring and resizing of epitaxial film arrays and method thereof
TW201806083A (zh) 用於非破壞性磊晶移起之有效複合基材
CN115188695A (zh) 半导体器件的制作方法以及半导体器件
CN114823465A (zh) 一种半导体元件的制备方法
CN115497873A (zh) 半导体器件的制作方法以及半导体器件
JP2013115307A (ja) Ｉｉｉ族窒化物複合基板の製造方法
JP2020038939A (ja) 縦型化合物半導体デバイスの製造方法