JP2024085189A - 半導体デバイスの製造方法 - Google Patents

半導体デバイスの製造方法 Download PDF

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Publication number
JP2024085189A
JP2024085189A JP2022199580A JP2022199580A JP2024085189A JP 2024085189 A JP2024085189 A JP 2024085189A JP 2022199580 A JP2022199580 A JP 2022199580A JP 2022199580 A JP2022199580 A JP 2022199580A JP 2024085189 A JP2024085189 A JP 2024085189A
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JP
Japan
Prior art keywords
substrate
semiconductor
semiconductor substrate
fixing portion
forming step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022199580A
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English (en)
Japanese (ja)
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JP2024085189A5 (https=
Inventor
良則 五十川
Yoshinori Isokawa
浩 山邊
Hiroshi Yamabe
ウィクラマナヤカ スニル
Wickramanayaka Sunil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tazmo Co Ltd
Original Assignee
Tazmo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tazmo Co Ltd filed Critical Tazmo Co Ltd
Priority to JP2022199580A priority Critical patent/JP2024085189A/ja
Priority to TW112147266A priority patent/TWI897132B/zh
Priority to EP23903346.7A priority patent/EP4636810A1/en
Priority to PCT/JP2023/043371 priority patent/WO2024128057A1/ja
Priority to TW114119311A priority patent/TWI908675B/zh
Priority to TW114119310A priority patent/TWI908674B/zh
Priority to KR1020257021077A priority patent/KR20250114080A/ko
Priority to CN202380085253.0A priority patent/CN120359595A/zh
Publication of JP2024085189A publication Critical patent/JP2024085189A/ja
Publication of JP2024085189A5 publication Critical patent/JP2024085189A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B23K26/323—Bonding taking account of the properties of the material involved involving parts made of dissimilar metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B23K26/324—Bonding taking account of the properties of the material involved involving non-metallic parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Micromachines (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
JP2022199580A 2022-12-14 2022-12-14 半導体デバイスの製造方法 Pending JP2024085189A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2022199580A JP2024085189A (ja) 2022-12-14 2022-12-14 半導体デバイスの製造方法
TW112147266A TWI897132B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法
EP23903346.7A EP4636810A1 (en) 2022-12-14 2023-12-05 Method for manufacturing semiconductor device
PCT/JP2023/043371 WO2024128057A1 (ja) 2022-12-14 2023-12-05 半導体デバイスの製造方法
TW114119311A TWI908675B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法
TW114119310A TWI908674B (zh) 2022-12-14 2023-12-05 半導體裝置之製造方法
KR1020257021077A KR20250114080A (ko) 2022-12-14 2023-12-05 반도체 디바이스의 제조방법
CN202380085253.0A CN120359595A (zh) 2022-12-14 2023-12-05 半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022199580A JP2024085189A (ja) 2022-12-14 2022-12-14 半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2024085189A true JP2024085189A (ja) 2024-06-26
JP2024085189A5 JP2024085189A5 (https=) 2026-03-06

Family

ID=91485696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022199580A Pending JP2024085189A (ja) 2022-12-14 2022-12-14 半導体デバイスの製造方法

Country Status (6)

Country Link
EP (1) EP4636810A1 (https=)
JP (1) JP2024085189A (https=)
KR (1) KR20250114080A (https=)
CN (1) CN120359595A (https=)
TW (3) TWI908674B (https=)
WO (1) WO2024128057A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025115594A1 (ja) * 2023-11-27 2025-06-05 タツモ株式会社 半導体デバイスの製造方法
WO2025115595A1 (ja) * 2023-11-27 2025-06-05 タツモ株式会社 半導体デバイスの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243334A (ja) * 2002-02-20 2003-08-29 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法および電子デバイス
JP4556158B2 (ja) * 2002-10-22 2010-10-06 株式会社Sumco 貼り合わせｓｏｉ基板の製造方法および半導体装置
JP5041714B2 (ja) 2006-03-13 2012-10-03 信越化学工業株式会社 マイクロチップ及びマイクロチップ製造用ｓｏｉ基板
JP5201967B2 (ja) * 2007-12-10 2013-06-05 株式会社半導体エネルギー研究所 半導体基板の作製方法および半導体装置の作製方法
US9111981B2 (en) * 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
JP5970986B2 (ja) * 2012-07-05 2016-08-17 富士通株式会社 ウエハー基板の製造方法
JP2019012756A (ja) * 2017-06-29 2019-01-24 株式会社テンシックス 半導体素子基板の製造方法
CN110797297A (zh) * 2018-08-03 2020-02-14 沈阳硅基科技有限公司 使用自控层分离方式制备绝缘层上的硅结构的方法
JP7608120B2 (ja) * 2020-11-13 2025-01-06 タツモ株式会社 接合装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025115594A1 (ja) * 2023-11-27 2025-06-05 タツモ株式会社 半導体デバイスの製造方法
WO2025115595A1 (ja) * 2023-11-27 2025-06-05 タツモ株式会社 半導体デバイスの製造方法

Also Published As

Publication number Publication date
KR20250114080A (ko) 2025-07-28
TWI908675B (zh) 2025-12-11
EP4636810A1 (en) 2025-10-22
TW202536932A (zh) 2025-09-16
TW202536931A (zh) 2025-09-16
TW202425081A (zh) 2024-06-16
WO2024128057A1 (ja) 2024-06-20
TWI897132B (zh) 2025-09-11
CN120359595A (zh) 2025-07-22
TWI908674B (zh) 2025-12-11

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