TWI899164B - 釕之半導體用處理液 - Google Patents

釕之半導體用處理液

Info

Publication number
TWI899164B
TWI899164B TW110106725A TW110106725A TWI899164B TW I899164 B TWI899164 B TW I899164B TW 110106725 A TW110106725 A TW 110106725A TW 110106725 A TW110106725 A TW 110106725A TW I899164 B TWI899164 B TW I899164B
Authority
TW
Taiwan
Prior art keywords
ruthenium
acid
hydroxyl group
ruo4
compounds
Prior art date
Application number
TW110106725A
Other languages
English (en)
Chinese (zh)
Other versions
TW202200843A (zh
Inventor
佐藤伴光
吉川由樹
下田享史
根岸貴幸
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202200843A publication Critical patent/TW202200843A/zh
Application granted granted Critical
Publication of TWI899164B publication Critical patent/TWI899164B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/168—Organometallic compounds or orgometallic complexes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Catalysts (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW110106725A 2020-02-25 2021-02-25 釕之半導體用處理液 TWI899164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-029907 2020-02-25
JP2020029907 2020-02-25

Publications (2)

Publication Number Publication Date
TW202200843A TW202200843A (zh) 2022-01-01
TWI899164B true TWI899164B (zh) 2025-10-01

Family

ID=77491848

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110106725A TWI899164B (zh) 2020-02-25 2021-02-25 釕之半導體用處理液

Country Status (6)

Country Link
US (1) US12538727B2 (https=)
JP (2) JP7496410B2 (https=)
KR (1) KR102582791B1 (https=)
CN (1) CN115152005A (https=)
TW (1) TWI899164B (https=)
WO (1) WO2021172397A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI901664B (zh) * 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
WO2026083966A1 (ja) * 2024-10-16 2026-04-23 株式会社トクヤマ 半導体処理液、処理方法及び半導体基板の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101481345A (zh) * 2009-02-24 2009-07-15 云南大学 螺环-β-内酰胺1-烷基-2,7-二羰-1-氮杂螺[3.5]-壬-5,8-二烯-3-取代羧酸酯及其制备方法
TW201144484A (en) * 2009-12-17 2011-12-16 Showa Denko Kk Composition for etching ruthenium-based metal and method for preparing same
CN103119694A (zh) * 2009-12-11 2013-05-22 高级技术材料公司 掩蔽材料的去除
WO2019150990A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法

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JPS59230197A (ja) 1983-06-14 1984-12-24 三菱重工業株式会社 放射性廃液の処理方法
JPH0348748A (ja) 1989-07-18 1991-03-01 Hitachi Ltd Ｒｕ濃度センサ及びＲｕ検出システム
JP3113033B2 (ja) 1992-02-05 2000-11-27 株式会社日立製作所 放射性溶液中のルテニウム及びテクネチウムの分離方法並びにそれを用いた使用済核燃料再処理プロセス
JPH0972833A (ja) 1995-09-04 1997-03-18 Mitsubishi Heavy Ind Ltd 揮発性四酸化ルテニウムのサンプリング方法
JP3637670B2 (ja) 1996-02-28 2005-04-13 三菱化学株式会社 ルテニウム錯体の回収方法
TW490756B (en) 1999-08-31 2002-06-11 Hitachi Ltd Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components
JP3619745B2 (ja) 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
JP2007302938A (ja) 2006-05-10 2007-11-22 Mitsubishi Chemicals Corp 金属の分離方法
US8008202B2 (en) 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
JPWO2012017819A1 (ja) 2010-08-05 2013-10-03 昭和電工株式会社 ニッケル白金合金系金属除去用組成物
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
US11572533B2 (en) * 2018-05-23 2023-02-07 Tokuyama Corporation Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor wafer
JP6901998B2 (ja) 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
JP7450334B2 (ja) * 2018-12-27 2024-03-15 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101481345A (zh) * 2009-02-24 2009-07-15 云南大学 螺环-β-内酰胺1-烷基-2,7-二羰-1-氮杂螺[3.5]-壬-5,8-二烯-3-取代羧酸酯及其制备方法
CN103119694A (zh) * 2009-12-11 2013-05-22 高级技术材料公司 掩蔽材料的去除
TW201144484A (en) * 2009-12-17 2011-12-16 Showa Denko Kk Composition for etching ruthenium-based metal and method for preparing same
WO2019150990A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 薬液、薬液の製造方法、基板の処理方法

Also Published As

Publication number Publication date
WO2021172397A1 (ja) 2021-09-02
JP7627717B2 (ja) 2025-02-06
JP2023126825A (ja) 2023-09-12
CN115152005A (zh) 2022-10-04
TW202200843A (zh) 2022-01-01
JP7496410B2 (ja) 2024-06-06
KR20220130811A (ko) 2022-09-27
US12538727B2 (en) 2026-01-27
US20230207329A1 (en) 2023-06-29
JPWO2021172397A1 (https=) 2021-09-02
KR102582791B1 (ko) 2023-09-25

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