TWI896676B - 形成狹槽接點的方法 - Google Patents

形成狹槽接點的方法

Info

Publication number
TWI896676B
TWI896676B TW110120553A TW110120553A TWI896676B TW I896676 B TWI896676 B TW I896676B TW 110120553 A TW110120553 A TW 110120553A TW 110120553 A TW110120553 A TW 110120553A TW I896676 B TWI896676 B TW I896676B
Authority
TW
Taiwan
Prior art keywords
relief pattern
substrate
photoacid
patterning
selected portions
Prior art date
Application number
TW110120553A
Other languages
English (en)
Chinese (zh)
Other versions
TW202215497A (zh
Inventor
邁克爾 墨菲
約迪 格熱希科維亞克
安東 Ｊ 德維利耶
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202215497A publication Critical patent/TW202215497A/zh
Application granted granted Critical
Publication of TWI896676B publication Critical patent/TWI896676B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110120553A 2020-06-11 2021-06-07 形成狹槽接點的方法 TWI896676B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063037798P 2020-06-11 2020-06-11
US63/037,798 2020-06-11
US17/221,416 US11682559B2 (en) 2020-06-11 2021-04-02 Method to form narrow slot contacts
US17/221,416 2021-04-02

Publications (2)

Publication Number Publication Date
TW202215497A TW202215497A (zh) 2022-04-16
TWI896676B true TWI896676B (zh) 2025-09-11

Family

ID=78825896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110120553A TWI896676B (zh) 2020-06-11 2021-06-07 形成狹槽接點的方法

Country Status (5)

Country Link
US (2) US11682559B2 (https=)
JP (1) JP2023530260A (https=)
CN (1) CN115868012B (https=)
TW (1) TWI896676B (https=)
WO (1) WO2021252107A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11682559B2 (en) * 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts
KR102839122B1 (ko) * 2023-01-23 2025-07-28 닛산 가가쿠 가부시키가이샤 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140225252A1 (en) * 2013-02-12 2014-08-14 Brewer Science Inc. On-track reverse lithography to thin mask for fabrication of dark-field features
US20150294878A1 (en) * 2014-04-10 2015-10-15 Tokyo Electron Limited Method for patterning contact openings on a substrate
US20160377982A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Methods of Forming a Mask for Substrate Patterning
TW201928534A (zh) * 2017-10-19 2019-07-16 日商富士軟片股份有限公司 電路基板的製造方法及觸控面板的製造方法
TW202020568A (zh) * 2018-11-21 2020-06-01 台灣積體電路製造股份有限公司 微影方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5507380B2 (ja) * 2010-02-23 2014-05-28 東京応化工業株式会社 パターン形成方法
JP5518575B2 (ja) * 2010-05-27 2014-06-11 東京応化工業株式会社 パターン形成方法
US9851639B2 (en) * 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
JP5790678B2 (ja) 2013-02-15 2015-10-07 信越化学工業株式会社 パターン形成方法
US9291909B2 (en) * 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
JP6003873B2 (ja) 2013-11-28 2016-10-05 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
CN106662816B (zh) * 2014-07-08 2020-10-23 东京毅力科创株式会社 负性显影剂相容性的光致抗蚀剂组合物及使用方法
CN106249540A (zh) 2015-06-03 2016-12-21 陶氏环球技术有限责任公司 图案处理方法
KR102634069B1 (ko) * 2015-09-30 2024-02-05 도쿄엘렉트론가부시키가이샤 극자외선 리소그래피를 사용하여 기판을 패터닝하기 위한 방법
US11682559B2 (en) * 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140225252A1 (en) * 2013-02-12 2014-08-14 Brewer Science Inc. On-track reverse lithography to thin mask for fabrication of dark-field features
US20150294878A1 (en) * 2014-04-10 2015-10-15 Tokyo Electron Limited Method for patterning contact openings on a substrate
US20160377982A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Methods of Forming a Mask for Substrate Patterning
TW201928534A (zh) * 2017-10-19 2019-07-16 日商富士軟片股份有限公司 電路基板的製造方法及觸控面板的製造方法
TW202020568A (zh) * 2018-11-21 2020-06-01 台灣積體電路製造股份有限公司 微影方法

Also Published As

Publication number Publication date
US12488989B2 (en) 2025-12-02
JP2023530260A (ja) 2023-07-14
WO2021252107A1 (en) 2021-12-16
CN115868012B (zh) 2026-03-20
US20210391180A1 (en) 2021-12-16
KR20230022951A (ko) 2023-02-16
CN115868012A (zh) 2023-03-28
US20230274940A1 (en) 2023-08-31
US11682559B2 (en) 2023-06-20
TW202215497A (zh) 2022-04-16

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