JP2023530260A - 幅狭スロット接点を形成する方法 - Google Patents

幅狭スロット接点を形成する方法 Download PDF

Info

Publication number
JP2023530260A
JP2023530260A JP2022575929A JP2022575929A JP2023530260A JP 2023530260 A JP2023530260 A JP 2023530260A JP 2022575929 A JP2022575929 A JP 2022575929A JP 2022575929 A JP2022575929 A JP 2022575929A JP 2023530260 A JP2023530260 A JP 2023530260A
Authority
JP
Japan
Prior art keywords
relief pattern
photoacid
substrate
filler material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022575929A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023530260A5 (https=
Inventor
マーフィー，マイケル
グルゼスコヴィアク，ジョディ
デヴィリアーズ，アントン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron US Holdings Inc filed Critical Tokyo Electron Ltd
Publication of JP2023530260A publication Critical patent/JP2023530260A/ja
Publication of JP2023530260A5 publication Critical patent/JP2023530260A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022575929A 2020-06-11 2021-05-05 幅狭スロット接点を形成する方法 Pending JP2023530260A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063037798P 2020-06-11 2020-06-11
US63/037,798 2020-06-11
US17/221,416 US11682559B2 (en) 2020-06-11 2021-04-02 Method to form narrow slot contacts
US17/221,416 2021-04-02
PCT/US2021/030927 WO2021252107A1 (en) 2020-06-11 2021-05-05 Method to form narrow slot contacts

Publications (2)

Publication Number Publication Date
JP2023530260A true JP2023530260A (ja) 2023-07-14
JP2023530260A5 JP2023530260A5 (https=) 2024-03-06

Family

ID=78825896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022575929A Pending JP2023530260A (ja) 2020-06-11 2021-05-05 幅狭スロット接点を形成する方法

Country Status (5)

Country Link
US (2) US11682559B2 (https=)
JP (1) JP2023530260A (https=)
CN (1) CN115868012B (https=)
TW (1) TWI896676B (https=)
WO (1) WO2021252107A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11682559B2 (en) * 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts
KR102839122B1 (ko) * 2023-01-23 2025-07-28 닛산 가가쿠 가부시키가이샤 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011197628A (ja) * 2010-02-23 2011-10-06 Tokyo Ohka Kogyo Co Ltd パターン形成方法
JP2011248147A (ja) * 2010-05-27 2011-12-08 Tokyo Ohka Kogyo Co Ltd パターン形成方法
JP2016526183A (ja) * 2013-05-17 2016-09-01 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ポリマー型熱酸発生剤を含む組成物及びそれの方法
US20160377982A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Methods of Forming a Mask for Substrate Patterning
JP2017513233A (ja) * 2014-04-10 2017-05-25 東京エレクトロン株式会社 基板の複数の接触開口をパターニングする方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9851639B2 (en) * 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
US20140225252A1 (en) * 2013-02-12 2014-08-14 Brewer Science Inc. On-track reverse lithography to thin mask for fabrication of dark-field features
JP5790678B2 (ja) 2013-02-15 2015-10-07 信越化学工業株式会社 パターン形成方法
JP6003873B2 (ja) 2013-11-28 2016-10-05 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
CN106662816B (zh) * 2014-07-08 2020-10-23 东京毅力科创株式会社 负性显影剂相容性的光致抗蚀剂组合物及使用方法
CN106249540A (zh) 2015-06-03 2016-12-21 陶氏环球技术有限责任公司 图案处理方法
KR102634069B1 (ko) * 2015-09-30 2024-02-05 도쿄엘렉트론가부시키가이샤 극자외선 리소그래피를 사용하여 기판을 패터닝하기 위한 방법
JP6995873B2 (ja) * 2017-10-19 2022-01-17 富士フイルム株式会社 回路基板の製造方法及びタッチパネルの製造方法
US11079681B2 (en) * 2018-11-21 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method for positive tone development
US11682559B2 (en) * 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011197628A (ja) * 2010-02-23 2011-10-06 Tokyo Ohka Kogyo Co Ltd パターン形成方法
JP2011248147A (ja) * 2010-05-27 2011-12-08 Tokyo Ohka Kogyo Co Ltd パターン形成方法
JP2016526183A (ja) * 2013-05-17 2016-09-01 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ポリマー型熱酸発生剤を含む組成物及びそれの方法
JP2017513233A (ja) * 2014-04-10 2017-05-25 東京エレクトロン株式会社 基板の複数の接触開口をパターニングする方法
US20160377982A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Methods of Forming a Mask for Substrate Patterning

Also Published As

Publication number Publication date
US12488989B2 (en) 2025-12-02
WO2021252107A1 (en) 2021-12-16
CN115868012B (zh) 2026-03-20
US20210391180A1 (en) 2021-12-16
KR20230022951A (ko) 2023-02-16
TWI896676B (zh) 2025-09-11
CN115868012A (zh) 2023-03-28
US20230274940A1 (en) 2023-08-31
US11682559B2 (en) 2023-06-20
TW202215497A (zh) 2022-04-16

Similar Documents

Publication Publication Date Title
TWI449084B (zh) 形成電子裝置之方法
TWI476816B (zh) 自我對準間隔之多重圖案化方法
JP5568015B2 (ja) フォトレジスト組成物および多層フォトレジスト系を用いて多重露光する方法
CN103258720B (zh) 光刻胶图案修整方法
TWI442453B (zh) 形成電子裝置之方法
CN101814421B (zh) 形成半导体器件的精细图案的方法
US7846623B2 (en) Resist pattern and reflow technology
US20050227492A1 (en) Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device
US6767693B1 (en) Materials and methods for sub-lithographic patterning of contact, via, and trench structures in integrated circuit devices
TW201604932A (zh) 基板上之接觸窗開口的圖案化方法
CN1182440C (zh) 用于深紫外线光刻的层状结构以及形成光刻层状结构的方法
TWI793079B (zh) 半導體裝置的製作方法
US12488989B2 (en) Method to form narrow slot contacts
US6764946B1 (en) Method of controlling line edge roughness in resist films
JP2025507319A (ja) 色素拡散による選択的脱保護
KR20250068652A (ko) 반도체 공작물의 패터닝
JP2024524853A (ja) 二層系を用いた向上したフリージングレスアンチスペーサ形成による材料被覆膜を除去するための方法
TWI738924B (zh) 積體電路的製造方法
KR102956177B1 (ko) 좁은 슬롯 접점을 형성하기 위한 방법
JP2009139695A (ja) 半導体装置の製造方法
KR100603700B1 (ko) 화학적으로 증폭된 포토레지스트의 해상도를 향상시키는방법
KR20110109561A (ko) 반도체 소자의 제조 방법
US20240419074A1 (en) Formation of sub-lithographic mandrel patterns using reversible overcoat
US20250306468A1 (en) Multipatterning with crosslinkable overcoat
JP2004279570A (ja) パターン形成方法および半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20241126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250207

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250415