CN115868012B - 形成窄槽接触部的方法 - Google Patents

形成窄槽接触部的方法

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Publication number
CN115868012B
CN115868012B CN202180039903.9A CN202180039903A CN115868012B CN 115868012 B CN115868012 B CN 115868012B CN 202180039903 A CN202180039903 A CN 202180039903A CN 115868012 B CN115868012 B CN 115868012B
Authority
CN
China
Prior art keywords
relief pattern
photoacid
substrate
selected portions
filler material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180039903.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN115868012A (zh
Inventor
迈克尔·墨菲
约迪·格热希科维亚克
安东·德维利耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115868012A publication Critical patent/CN115868012A/zh
Application granted granted Critical
Publication of CN115868012B publication Critical patent/CN115868012B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202180039903.9A 2020-06-11 2021-05-05 形成窄槽接触部的方法 Active CN115868012B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063037798P 2020-06-11 2020-06-11
US63/037,798 2020-06-11
US17/221,416 US11682559B2 (en) 2020-06-11 2021-04-02 Method to form narrow slot contacts
US17/221,416 2021-04-02
PCT/US2021/030927 WO2021252107A1 (en) 2020-06-11 2021-05-05 Method to form narrow slot contacts

Publications (2)

Publication Number Publication Date
CN115868012A CN115868012A (zh) 2023-03-28
CN115868012B true CN115868012B (zh) 2026-03-20

Family

ID=78825896

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180039903.9A Active CN115868012B (zh) 2020-06-11 2021-05-05 形成窄槽接触部的方法

Country Status (5)

Country Link
US (2) US11682559B2 (https=)
JP (1) JP2023530260A (https=)
CN (1) CN115868012B (https=)
TW (1) TWI896676B (https=)
WO (1) WO2021252107A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11682559B2 (en) * 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts
KR102839122B1 (ko) * 2023-01-23 2025-07-28 닛산 가가쿠 가부시키가이샤 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851557A (zh) * 2015-06-24 2018-03-27 东京毅力科创株式会社 形成用于基板图案化的掩模的方法
CN108292593A (zh) * 2015-09-30 2018-07-17 东京毅力科创株式会社 使用极紫外光刻对衬底进行图案化的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5507380B2 (ja) * 2010-02-23 2014-05-28 東京応化工業株式会社 パターン形成方法
JP5518575B2 (ja) * 2010-05-27 2014-06-11 東京応化工業株式会社 パターン形成方法
US9851639B2 (en) * 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
US20140225252A1 (en) * 2013-02-12 2014-08-14 Brewer Science Inc. On-track reverse lithography to thin mask for fabrication of dark-field features
JP5790678B2 (ja) 2013-02-15 2015-10-07 信越化学工業株式会社 パターン形成方法
US9291909B2 (en) * 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
JP6003873B2 (ja) 2013-11-28 2016-10-05 信越化学工業株式会社 レジスト材料並びにこれを用いたパターン形成方法
US9406526B2 (en) * 2014-04-10 2016-08-02 Tokyo Electron Limited Method for patterning contact openings on a substrate
CN106662816B (zh) * 2014-07-08 2020-10-23 东京毅力科创株式会社 负性显影剂相容性的光致抗蚀剂组合物及使用方法
CN106249540A (zh) 2015-06-03 2016-12-21 陶氏环球技术有限责任公司 图案处理方法
JP6995873B2 (ja) * 2017-10-19 2022-01-17 富士フイルム株式会社 回路基板の製造方法及びタッチパネルの製造方法
US11079681B2 (en) * 2018-11-21 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method for positive tone development
US11682559B2 (en) * 2020-06-11 2023-06-20 Tokyo Electron Limited Method to form narrow slot contacts

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107851557A (zh) * 2015-06-24 2018-03-27 东京毅力科创株式会社 形成用于基板图案化的掩模的方法
CN108292593A (zh) * 2015-09-30 2018-07-17 东京毅力科创株式会社 使用极紫外光刻对衬底进行图案化的方法

Also Published As

Publication number Publication date
US12488989B2 (en) 2025-12-02
JP2023530260A (ja) 2023-07-14
WO2021252107A1 (en) 2021-12-16
US20210391180A1 (en) 2021-12-16
KR20230022951A (ko) 2023-02-16
TWI896676B (zh) 2025-09-11
CN115868012A (zh) 2023-03-28
US20230274940A1 (en) 2023-08-31
US11682559B2 (en) 2023-06-20
TW202215497A (zh) 2022-04-16

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