TWI894487B - 異物檢查裝置、曝光裝置及物品之製造方法 - Google Patents

異物檢查裝置、曝光裝置及物品之製造方法

Info

Publication number
TWI894487B
TWI894487B TW111134889A TW111134889A TWI894487B TW I894487 B TWI894487 B TW I894487B TW 111134889 A TW111134889 A TW 111134889A TW 111134889 A TW111134889 A TW 111134889A TW I894487 B TWI894487 B TW I894487B
Authority
TW
Taiwan
Prior art keywords
foreign matter
exposure
light
original plate
light source
Prior art date
Application number
TW111134889A
Other languages
English (en)
Chinese (zh)
Other versions
TW202324498A (zh
Inventor
前田浩平
Original Assignee
日商佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202324498A publication Critical patent/TW202324498A/zh
Application granted granted Critical
Publication of TWI894487B publication Critical patent/TWI894487B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Pathology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW111134889A 2021-11-10 2022-09-15 異物檢查裝置、曝光裝置及物品之製造方法 TWI894487B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-183616 2021-11-10
JP2021183616A JP7778535B2 (ja) 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法

Publications (2)

Publication Number Publication Date
TW202324498A TW202324498A (zh) 2023-06-16
TWI894487B true TWI894487B (zh) 2025-08-21

Family

ID=86266358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111134889A TWI894487B (zh) 2021-11-10 2022-09-15 異物檢查裝置、曝光裝置及物品之製造方法

Country Status (4)

Country Link
JP (1) JP7778535B2 (cg-RX-API-DMAC7.html)
KR (1) KR20230068305A (cg-RX-API-DMAC7.html)
CN (1) CN116107158A (cg-RX-API-DMAC7.html)
TW (1) TWI894487B (cg-RX-API-DMAC7.html)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
WO2010098179A1 (ja) * 2009-02-27 2010-09-02 株式会社日立ハイテクノロジーズ 表面検査装置及びその校正方法
JP2015079075A (ja) * 2013-10-16 2015-04-23 キヤノン株式会社 投影露光装置、異物検査装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228428A (ja) * 2001-02-02 2002-08-14 Nikon Corp 異物検出装置及び露光装置
JP2004271421A (ja) * 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
NL2003678A (en) * 2008-12-17 2010-06-21 Asml Holding Nv Euv mask inspection system.
JP2010272553A (ja) * 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011174817A (ja) * 2010-02-24 2011-09-08 Canon Inc 異物検査装置、露光装置及びデバイス製造方法
JP5506555B2 (ja) * 2010-06-11 2014-05-28 キヤノン株式会社 異物検査装置、それを用いた露光装置及びデバイスの製造方法
JP2013178231A (ja) * 2012-02-01 2013-09-09 Canon Inc 検査装置、検査方法、リソグラフィ装置及びインプリント装置
JP5633836B1 (ja) * 2014-04-17 2014-12-03 レーザーテック株式会社 照明装置、及び検査装置
JP7292842B2 (ja) * 2018-09-21 2023-06-19 キヤノン株式会社 異物検査装置、露光装置、および物品製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
WO2010098179A1 (ja) * 2009-02-27 2010-09-02 株式会社日立ハイテクノロジーズ 表面検査装置及びその校正方法
JP2015079075A (ja) * 2013-10-16 2015-04-23 キヤノン株式会社 投影露光装置、異物検査装置

Also Published As

Publication number Publication date
JP7778535B2 (ja) 2025-12-02
JP2023071041A (ja) 2023-05-22
TW202324498A (zh) 2023-06-16
CN116107158A (zh) 2023-05-12
KR20230068305A (ko) 2023-05-17

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