JP7778535B2 - 異物検査装置、露光装置、及び物品の製造方法 - Google Patents

異物検査装置、露光装置、及び物品の製造方法

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Publication number
JP7778535B2
JP7778535B2 JP2021183616A JP2021183616A JP7778535B2 JP 7778535 B2 JP7778535 B2 JP 7778535B2 JP 2021183616 A JP2021183616 A JP 2021183616A JP 2021183616 A JP2021183616 A JP 2021183616A JP 7778535 B2 JP7778535 B2 JP 7778535B2
Authority
JP
Japan
Prior art keywords
foreign matter
original
exposure
foreign
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021183616A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023071041A (ja
JP2023071041A5 (cg-RX-API-DMAC7.html
Inventor
浩平 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021183616A priority Critical patent/JP7778535B2/ja
Priority to TW111134889A priority patent/TWI894487B/zh
Priority to KR1020220142014A priority patent/KR20230068305A/ko
Priority to CN202211382397.6A priority patent/CN116107158A/zh
Publication of JP2023071041A publication Critical patent/JP2023071041A/ja
Publication of JP2023071041A5 publication Critical patent/JP2023071041A5/ja
Application granted granted Critical
Publication of JP7778535B2 publication Critical patent/JP7778535B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Pathology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2021183616A 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法 Active JP7778535B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021183616A JP7778535B2 (ja) 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法
TW111134889A TWI894487B (zh) 2021-11-10 2022-09-15 異物檢查裝置、曝光裝置及物品之製造方法
KR1020220142014A KR20230068305A (ko) 2021-11-10 2022-10-31 이물 검사 장치, 노광 장치 및 물품 제조 방법
CN202211382397.6A CN116107158A (zh) 2021-11-10 2022-11-07 异物检查装置、曝光装置以及物品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021183616A JP7778535B2 (ja) 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2023071041A JP2023071041A (ja) 2023-05-22
JP2023071041A5 JP2023071041A5 (cg-RX-API-DMAC7.html) 2024-11-08
JP7778535B2 true JP7778535B2 (ja) 2025-12-02

Family

ID=86266358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021183616A Active JP7778535B2 (ja) 2021-11-10 2021-11-10 異物検査装置、露光装置、及び物品の製造方法

Country Status (4)

Country Link
JP (1) JP7778535B2 (cg-RX-API-DMAC7.html)
KR (1) KR20230068305A (cg-RX-API-DMAC7.html)
CN (1) CN116107158A (cg-RX-API-DMAC7.html)
TW (1) TWI894487B (cg-RX-API-DMAC7.html)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228428A (ja) 2001-02-02 2002-08-14 Nikon Corp 異物検出装置及び露光装置
JP2004271421A (ja) 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
JP2010145993A (ja) 2008-12-17 2010-07-01 Asml Holding Nv Ｅｕｖマスク検査システム
JP2010272553A (ja) 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011258880A (ja) 2010-06-11 2011-12-22 Canon Inc 異物検査装置、それを用いた露光装置及びデバイスの製造方法
JP2013178231A (ja) 2012-02-01 2013-09-09 Canon Inc 検査装置、検査方法、リソグラフィ装置及びインプリント装置
JP2015206817A (ja) 2014-04-17 2015-11-19 レーザーテック株式会社 照明装置、及び検査装置
JP2020051759A (ja) 2018-09-21 2020-04-02 キヤノン株式会社 異物検査装置、露光装置、および物品製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
JP2010203776A (ja) * 2009-02-27 2010-09-16 Hitachi High-Technologies Corp 表面検査装置及びその校正方法
JP2011174817A (ja) * 2010-02-24 2011-09-08 Canon Inc 異物検査装置、露光装置及びデバイス製造方法
JP2015079075A (ja) * 2013-10-16 2015-04-23 キヤノン株式会社 投影露光装置、異物検査装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002228428A (ja) 2001-02-02 2002-08-14 Nikon Corp 異物検出装置及び露光装置
JP2004271421A (ja) 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
JP2010145993A (ja) 2008-12-17 2010-07-01 Asml Holding Nv Ｅｕｖマスク検査システム
JP2010272553A (ja) 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011258880A (ja) 2010-06-11 2011-12-22 Canon Inc 異物検査装置、それを用いた露光装置及びデバイスの製造方法
JP2013178231A (ja) 2012-02-01 2013-09-09 Canon Inc 検査装置、検査方法、リソグラフィ装置及びインプリント装置
JP2015206817A (ja) 2014-04-17 2015-11-19 レーザーテック株式会社 照明装置、及び検査装置
JP2020051759A (ja) 2018-09-21 2020-04-02 キヤノン株式会社 異物検査装置、露光装置、および物品製造方法

Also Published As

Publication number Publication date
TWI894487B (zh) 2025-08-21
JP2023071041A (ja) 2023-05-22
TW202324498A (zh) 2023-06-16
CN116107158A (zh) 2023-05-12
KR20230068305A (ko) 2023-05-17

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